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Parijat P. Deb, Ph.D. - Publications

Affiliations: 
2007 Purdue University, West Lafayette, IN, United States 
Area:
Materials Science Engineering
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Zhao Z, Singh A, Chesin J, Armitage R, Wildeson I, Deb P, Armstrong A, Kisslinger K, Stach EA, Gradečak S. Cathodoluminescence as an effective probe of carrier transport and deep level defects in droop-mitigating InGaN/GaN quantum well heterostructures Applied Physics Express. 12: 034003. DOI: 10.7567/1882-0786/Ab0341  0.706
2019 Goodman SA, Syaranamual GJ, Chung JY, Li Z, Singh A, Su D, Kisslinger K, Armitage R, Wildeson I, Deb P, Stach E, Gradecak S. Effects of Beam-Induced Carbon Deposition on Electron Energy-Loss Spectroscopy Analysis of Compositional Fluctuations in InGaN/GaN Quantum Well LEDs Microscopy and Microanalysis. 25: 652-653. DOI: 10.1017/S1431927619003994  0.672
2017 Armstrong AM, Crawford MH, Koleske DD, Nelson EC, Wildeson I, Deb P. Spatial and compositional dependence of deep-level defects in InGaN LEDs (Conference Presentation) Proceedings of Spie. 10124. DOI: 10.1117/12.2252683  0.703
2017 Bhardwaj J, Cesaratto JM, Wildeson IH, Choy H, Tandon A, Soer WA, Schmidt PJ, Spinger B, Deb P, Shchekin OB, Götz W. Progress in high-luminance LED technology for solid-state lighting Physica Status Solidi (a). 214: 1600826. DOI: 10.1002/Pssa.201600826  0.675
2007 Deb P, Westover T, Kim H, Fisher T, Sands T. Field emission from GaN and (Al,Ga) NGaN nanorod heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 15-18. DOI: 10.1116/1.2732735  0.517
2007 Kim HG, Deb P, Sands T. Nanopatterned contacts to GaN Journal of Electronic Materials. 36: 359-367. DOI: 10.1007/S11664-006-0050-Z  0.602
2006 Deb P, Kim H, Qin Y, Lahiji R, Oliver M, Reifenberger R, Sands T. GaN nanorod Schottky and p-n junction diodes. Nano Letters. 6: 2893-8. PMID 17163726 DOI: 10.1021/Nl062152J  0.635
2006 Kim HG, Deb P, Sands T. High-reflectivity Al-Pt nanostructured Ohmic contact to p-GaN Ieee Transactions On Electron Devices. 53: 2448-2453. DOI: 10.1109/Ted.2006.882287  0.602
2006 Kim HG, Kim SH, Deb P, Sands T. Effect of KOH treatment on the Schottky barrier height and reverse leakage current in Pt/n-GaN Journal of Electronic Materials. 35: 107-112. DOI: 10.1007/S11664-006-0191-0  0.596
2005 Deb P, Kim H, Rawat V, Oliver M, Kim S, Marshall M, Stach E, Sands T. Faceted and vertically aligned GaN nanorod arrays fabricated without catalysts or lithography. Nano Letters. 5: 1847-51. PMID 16159236 DOI: 10.1021/Nl0510762  0.682
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