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Zehong Zhang, Ph.D. - Publications

Affiliations: 
2005 University of South Carolina, Columbia, SC 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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10 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Li Z, Zhang L, Zhang Z, Ju T, Zhang X, Zhang B. Identification of the Structures and Sources of Shockley-Type In-Grown Stacking Faults in 4H-SiC Epilayers Crystal Research and Technology. 53: 1700234. DOI: 10.1002/Crat.201700234  0.332
2015 Wang H, Niu Y, Yang F, Cai Y, Zhang Z, Zeng Z, Wang M, Zeng C, Zhang B. Influences of ICP etching damages on the electronic properties of metal field plate 4H-SiC Schottky diodes* Journal of Semiconductors. 36: 104006. DOI: 10.1088/1674-4926/36/10/104006  0.365
2007 Zhang Z, Stahlbush RE, Pirouz P, Sudarshan TS. Characteristics of dislocation half-loop arrays in 4H-SiC homo-epilayer Journal of Electronic Materials. 36: 539-542. DOI: 10.1007/S11664-007-0129-1  0.522
2006 Zhang Z, Moulton E, Sudarshan TS. Mechanism of eliminating basal plane dislocations in SiC thin films by epitaxy on an etched substrate Applied Physics Letters. 89: 081910. DOI: 10.1063/1.2337874  0.52
2006 Zhang Z, Maximenko SI, Shrivastava A, Sadagopan P, Gao Y, Sudarshan TS. Propagation of stacking faults from surface damage in SiC PiN diodes Applied Physics Letters. 88: 62101. DOI: 10.1063/1.2172015  0.546
2005 Zhang Z, Sudarshan TS. Evolution of basal plane dislocations during 4H -silicon carbide homoepitaxy Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2108109  0.547
2005 Zhang Z, Sudarshan TS. Basal plane dislocation-free epitaxy of silicon carbide Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2093931  0.561
2004 Li J, Gong Z, Chen C, Adivarahan V, Gaevski M, Kuokstis E, Shatalov M, Gao Y, Zhang Z, Arjunan A, Sudarshan TS, Maruska HP, Yang J, Asif M. Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over a -plane SiC Substrates Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E2.9  0.476
2004 Gao Y, Zhang Z, Bondokov R, Soloviev S, Sudarshan T. The Effect of Doping Concentration and Conductivity Type on Preferential Etching of 4H-SiC by Molten KOH Mrs Proceedings. 815. DOI: 10.1557/Proc-815-J5.20  0.543
2004 Zhang Z, Gao Y, Sudarshan T. Delineating Structural Defects in Highly Doped n-Type 4H-SiC Substrates Using a Combination of Thermal Diffusion and Molten KOH Etching Electrochemical and Solid State Letters. 7. DOI: 10.1149/1.1805500  0.55
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