Year |
Citation |
Score |
2011 |
Klein PB, Shrivastava A, Sudarshan TS. Slow de-trapping of minority holes in n-type 4H-SiC epilayers Physica Status Solidi (a) Applications and Materials Science. 208: 2790-2795. DOI: 10.1002/Pssa.201127260 |
0.562 |
|
2010 |
Klein PB, Myers-Ward R, Lew KK, VanMil BL, Eddy CR, Gaskill DK, Shrivastava A, Sudarshan TS. Temperature dependence of the carrier lifetime in 4H-SiC epilayers Materials Science Forum. 645: 203-206. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.203 |
0.598 |
|
2010 |
Klein PB, Myers-Ward R, Lew KK, Vanmil BL, Eddy CR, Gaskill DK, Shrivastava A, Sudarshan TS. Recombination processes controlling the carrier lifetime in n -4H-SiC epilayers with low Z1/2 concentrations Journal of Applied Physics. 108. DOI: 10.1063/1.3466745 |
0.582 |
|
2009 |
Shrivastava A, Klein PB, Glaser ER, Caldwell JD, Bolotnikov AV, Sudarshan TS. Long carrier lifetime in 4H-SiC epilayers using chlorinated precursors Materials Science Forum. 615: 291-294. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.291 |
0.501 |
|
2009 |
Shrivastava A, Muzykov PG, Sudarshan TS. Inverted Pyramid Defects in 4H-SiC Epilayers Materials Science Forum. 125-128. DOI: 10.4028/Www.Scientific.Net/Msf.615-617.125 |
0.723 |
|
2009 |
Maximenko SI, Freitas JA, Klein PB, Shrivastava A, Sudarshan TS. Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers Applied Physics Letters. 94: 092101. DOI: 10.1063/1.3089231 |
0.62 |
|
2008 |
Klein PB, Caldwell JD, Shrivastava A, Sudarshan TS. Variations in the Measured Carrier Lifetimes of n- 4H-SiC Epilayers Materials Science Forum. 489-492. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.489 |
0.541 |
|
2008 |
Shrivastava A, Muzykov PG, Pearman B, Angel SM, Sudarshan TS. Investigation of Triangular Defects in 4H-SiC 4° Off Cut (0001) Si Face Epilayers Grown by CVD Materials Science Forum. 139-142. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.139 |
0.72 |
|
2008 |
Shrivastava A, Muzykov P, Sudarshan TS. Identification of nucleation sites and formation mechanism of inverted pyramids in 4H-SiC epilayers Journal of Applied Physics. 104. DOI: 10.1063/1.2973153 |
0.73 |
|
2008 |
Shrivastava A, Muzykov P, Caldwell J, Sudarshan T. Study of triangular defects and inverted pyramids in 4H-SiC 4° off-cut (0001) Si face epilayers Journal of Crystal Growth. 310: 4443-4450. DOI: 10.1016/J.Jcrysgro.2008.07.102 |
0.724 |
|
2006 |
Zhang ZH, Shrivastava A, Sudarshan TS. Why are only some basal plane dislocations converted to threading edge dislocations during SiC epitaxy Materials Science Forum. 419-422. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.419 |
0.541 |
|
2006 |
Zhang Z, Maximenko SI, Shrivastava A, Sadagopan P, Gao Y, Sudarshan TS. Propagation of stacking faults from surface damage in SiC PiN diodes Applied Physics Letters. 88: 62101. DOI: 10.1063/1.2172015 |
0.641 |
|
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