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Roger K. Lake - Publications

Affiliations: 
Electrical Engineering University of California, Riverside, Riverside, CA, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Molecular Physics
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140 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Barati F, Arp TB, Su S, Lake RK, Aji V, van Grondelle R, Rudner MS, Song JCW, Gabor NM. Vibronic Exciton-Phonon States in Stack-Engineered van der Waals Heterojunction Photodiodes. Nano Letters. PMID 35787025 DOI: 10.1021/acs.nanolett.2c00944  0.602
2020 Chen C, Das P, Aytan E, Zhou W, Horowitz J, Satpati B, Balandin AA, Lake RK, Wei P. Strain controlled superconductivity in few-layer NbSe2. Acs Applied Materials & Interfaces. PMID 32805977 DOI: 10.1021/Acsami.0C08804  0.407
2020 Huang CY, Kargar F, Debnath T, Debnath B, Valentin MD, Synowicki R, Schoeche S, Lake RK, Balandin AA. Phononic and photonic properties of shape-engineered silicon nanoscale pillar arrays. Nanotechnology. PMID 32240999 DOI: 10.1088/1361-6528/Ab85Ee  0.33
2020 Djavid N, Lake RK. Electron transport through antiferromagnetic spin textures and skyrmions in a magnetic tunnel junction Physical Review B. 102. DOI: 10.1103/Physrevb.102.024419  0.32
2020 Geremew AK, Rumyantsev S, Debnath B, Lake RK, Balandin AA. High-frequency current oscillations in charge-density-wave 1T-TaS2 devices: Revisiting the “narrow band noise” concept Applied Physics Letters. 116: 163101. DOI: 10.1063/5.0007043  0.316
2019 Cheng B, Pan C, Che S, Wang P, Wu Y, Watanabe K, Taniguchi T, Ge S, Lake R, Smirnov D, Lau CN, Bockrath M. Fractional and Symmetry-Broken Chern Insulators in Tunable Moiré Superlattices. Nano Letters. PMID 31204812 DOI: 10.1021/Acs.Nanolett.9B00811  0.339
2019 Geremew AK, Rumyantsev S, Kargar F, Debnath B, Nosek A, Bloodgood MA, Bockrath M, Salguero TT, Lake RK, Balandin AA. Bias-Voltage Driven Switching of the Charge-Density-Wave and Normal Metallic Phases in 1T-TaS Thin-Film Devices. Acs Nano. PMID 31173685 DOI: 10.1021/Acsnano.9B02870  0.322
2019 Stepanov P, Barlas Y, Che S, Myhro K, Voigt G, Pi Z, Watanabe K, Taniguchi T, Smirnov D, Zhang F, Lake RK, MacDonald AH, Lau CN. Quantum parity Hall effect in Bernal-stacked trilayer graphene. Proceedings of the National Academy of Sciences of the United States of America. PMID 31053618 DOI: 10.1073/Pnas.1820835116  0.319
2019 Yin G, Yu JX, Liu Y, Lake RK, Zang J, Wang KL. Planar Hall Effect in Antiferromagnetic MnTe Thin Films. Physical Review Letters. 122: 106602. PMID 30932676 DOI: 10.1103/Physrevlett.122.106602  0.308
2019 Das P, Wickramaratne D, Debnath B, Yin G, Lake RK. Charged impurity scattering in two-dimensional materials with ring-shaped valence bands: GaS, GaSe, InS, and InSe Physical Review B. 99. DOI: 10.1103/Physrevb.99.085409  0.341
2018 Tian H, Khanaki A, Das P, Zheng R, Cui Z, He Y, Shi W, Xu Z, Lake RK, Liu J. The role of carbon interstitials in transition metal substrates on controllable synthesis of high-quality large-area two-dimensional hexagonal boron nitride layers. Nano Letters. PMID 29727192 DOI: 10.1021/Acs.Nanolett.7B05179  0.326
2018 Shi Y, Che S, Zhou K, Ge S, Pi Z, Espiritu T, Taniguchi T, Watanabe K, Barlas Y, Lake R, Lau CN. Tunable Lifshitz Transitions and Multiband Transport in Tetralayer Graphene. Physical Review Letters. 120: 096802. PMID 29547315 DOI: 10.1103/Physrevlett.120.096802  0.761
2018 Zhu X, Lei S, Tsai SH, Zhang X, Liu J, Yin G, Tang M, Torres CM, Navabi A, Jin Z, Tsai SP, Qasem H, Wang Y, Vajtai R, Lake RK, et al. A Study of Vertical Transport through Graphene towards Control of Quantum Tunneling. Nano Letters. PMID 29300487 DOI: 10.1021/Acs.Nanolett.7B03221  0.387
2018 Djavid N, Yin G, Barlas Y, Lake RK. Gate controlled Majorana zero modes of a two-dimensional topological superconductor Applied Physics Letters. 113: 012601. DOI: 10.1063/1.5027440  0.319
2018 Mutlu Z, Debnath B, Su S, Li C, Ozkan M, Bozhilov KN, Lake RK, Ozkan CS. Chemical vapor deposition and phase stability of pyrite on SiO2 Journal of Materials Chemistry C. 6: 4753-4759. DOI: 10.1039/C8Tc00584B  0.537
2018 Stepanov P, Che S, Shcherbakov D, Yang J, Chen R, Thilahar K, Voigt G, Bockrath MW, Smirnov D, Watanabe K, Taniguchi T, Lake RK, Barlas Y, MacDonald AH, Lau CN. Long-distance spin transport through a graphene quantum Hall antiferromagnet Nature Physics. 14: 907-911. DOI: 10.1038/S41567-018-0161-5  0.304
2018 Li C, Debnath B, Tan X, Su S, Xu K, Ge S, Neupane MR, Lake RK. Commensurate lattice constant dependent thermal conductivity of misoriented bilayer graphene Carbon. 138: 451-457. DOI: 10.1016/J.Carbon.2018.07.071  0.612
2018 Suja M, Debnath B, Bashar SB, Su L, Lake R, Liu J. Electrically driven plasmon-exciton coupled random lasing in ZnO metal-semiconductor-metal devices Applied Surface Science. 439: 525-532. DOI: 10.1016/J.Apsusc.2018.01.075  0.324
2017 Barati F, Grossnickle M, Su S, Lake RK, Aji V, Gabor NM. Hot carrier-enhanced interlayer electron-hole pair multiplication in 2D semiconductor heterostructure photocells. Nature Nanotechnology. PMID 28991242 DOI: 10.1038/Nnano.2017.203  0.619
2017 Suja M, Bashar SB, Debnath B, Su L, Shi W, Lake R, Liu J. Electrically driven deep ultraviolet MgZnO lasers at room temperature. Scientific Reports. 7: 2677. PMID 28572587 DOI: 10.1038/S41598-017-02791-0  0.321
2017 Zhou K, Wickramaratne D, Ge S, Su S, De A, Lake RK. Interlayer resistance of misoriented MoS2. Physical Chemistry Chemical Physics : Pccp. PMID 28379226 DOI: 10.1039/C6Cp08927E  0.787
2017 Su S, Das P, Ge S, Lake RK. Graphene contacts to a HfSe2/SnS2 heterostructure. The Journal of Chemical Physics. 146: 064701. PMID 28201902 DOI: 10.1063/1.4975178  0.627
2017 Chai Y, Su S, Yan D, Ozkan M, Lake R, Ozkan CS. Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts. Scientific Reports. 7: 41593. PMID 28186113 DOI: 10.1038/Srep41593  0.617
2017 Debnath B, Barlas Y, Wickramaratne D, Neupane MR, Lake RK. Exciton condensate in bilayer transition metal dichalcogenides: Strong coupling regime Physical Review B. 96. DOI: 10.1103/Physrevb.96.174504  0.309
2017 De A, Lake RK. Strong cavity-pseudospin coupling in monolayer transition metal dichalcogenides Physical Review B. 96. DOI: 10.1103/Physrevb.96.035436  0.303
2017 Su S, Barlas Y, Li J, Shi J, Lake RK. Effect of intervalley interaction on band topology of commensurate graphene/EuO heterostructures Physical Review B. 95. DOI: 10.1103/Physrevb.95.075418  0.624
2017 Lacerda MM, Kargar F, Aytan E, Samnakay R, Debnath B, Li JX, Khitun A, Lake RK, Shi J, Balandin AA. Variable-temperature inelastic light scattering spectroscopy of nickel oxide: Disentangling phonons and magnons Applied Physics Letters. 110: 202406. DOI: 10.1063/1.4983810  0.306
2017 Ramnani P, Neupane MR, Ge S, Balandin AA, Lake RK, Mulchandani A. Raman spectra of twisted CVD bilayer graphene Carbon. 123: 302-306. DOI: 10.1016/J.Carbon.2017.07.064  0.309
2016 Kargar F, Debnath B, Kakko JP, Säynätjoki A, Lipsanen H, Nika DL, Lake RK, Balandin AA. Direct observation of confined acoustic phonon polarization branches in free-standing semiconductor nanowires. Nature Communications. 7: 13400. PMID 27830698 DOI: 10.1038/Ncomms13400  0.368
2016 Malekpour H, Ramnani P, Srinivasan S, Balasubramanian G, Nika DL, Mulchandani A, Lake RK, Balandin AA. Thermal conductivity of graphene with defects induced by electron beam irradiation. Nanoscale. PMID 27432290 DOI: 10.1039/C6Nr03470E  0.332
2016 Liu G, Debnath B, Pope TR, Salguero TT, Lake RK, Balandin AA. A charge-density-wave oscillator based on an integrated tantalum disulfide-boron nitride-graphene device operating at room temperature. Nature Nanotechnology. PMID 27376243 DOI: 10.1038/Nnano.2016.108  0.354
2016 Pant A, Mutlu Z, Wickramaratne D, Cai H, Lake RK, Ozkan C, Tongay S. Fundamentals of lateral and vertical heterojunctions of atomically thin materials. Nanoscale. PMID 26831401 DOI: 10.1039/C5Nr08982D  0.335
2016 Sylvia SS, Alam K, Lake RK. Uniform Benchmarking of Low-Voltage van der Waals FETs Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 2: 28-35. DOI: 10.1109/Jxcdc.2016.2619351  0.787
2016 Chai Y, Ionescu R, Su S, Lake R, Ozkan M, Ozkan CS. Making one-dimensional electrical contacts to molybdenum disulfide-based heterostructures through plasma etching Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201532799  0.643
2015 Dhall R, Neupane MR, Wickramaratne D, Mecklenburg M, Li Z, Moore C, Lake RK, Cronin S. Direct bandgap transition in many-layer MoS2 by plasma-induced layer decoupling. Advanced Materials (Deerfield Beach, Fla.). 27: 1573-8. PMID 25589365 DOI: 10.1002/Adma.201405259  0.315
2015 Neupane MR, Rahman R, Lake RK. Effect of strain on the electronic and optical properties of Ge-Si dome shaped nanocrystals. Physical Chemistry Chemical Physics : Pccp. 17: 2484-93. PMID 25493297 DOI: 10.1039/C4Cp03711A  0.32
2015 Khasanvis S, Habib KMM, Rahman M, Lake R, Moritz CA. Low-power heterogeneous graphene nanoribbon-CMOS multistate volatile memory circuit Acm Journal On Emerging Technologies in Computing Systems. 12. DOI: 10.1145/2700233  0.309
2015 Galatsis K, Ahn C, Krivorotov I, Kim P, Lake R, Wang KL, Chang JP. A Material Framework for Beyond-CMOS Devices Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 19-27. DOI: 10.1109/Jxcdc.2015.2424832  0.311
2015 Das P, Yin G, Sylvia SS, Alamt K, Wickramaratne D, Lake RK. The impact of the ring shaped valence band in few-layer III-VI materials on fet operation 18th International Workshop On Computational Electronics, Iwce 2015. DOI: 10.1109/IWCE.2015.7301950  0.768
2015 Gillgren N, Wickramaratne D, Shi Y, Espiritu T, Yang J, Hu J, Wei J, Liu X, Mao Z, Watanabe K, Taniguchi T, Bockrath M, Barlas Y, Lake RK, Lau CN. Gate tunable quantum oscillations in air-stable and high mobility few-layer phosphorene heterostructures 2d Materials. 2. DOI: 10.1088/2053-1583/2/1/011001  0.408
2015 Wickramaratne D, Zahid F, Lake RK. Electronic and thermoelectric properties of van der Waals materials with ring-shaped valence bands Journal of Applied Physics. 118. DOI: 10.1063/1.4928559  0.664
2015 Alaskar Y, Arafin S, Lin Q, Wickramaratne D, McKay J, Norman AG, Zhang Z, Yao L, Ding F, Zou J, Goorsky MS, Lake RK, Zurbuchen MA, Wang KL. Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.003  0.335
2014 Sgouros AP, Neupane MR, Sigalas MM, Aravantinos-Zafiris N, Lake RK. Nanoscale phononic interconnects in THz frequencies. Physical Chemistry Chemical Physics : Pccp. 16: 23355-64. PMID 25260120 DOI: 10.1039/C4Cp02328E  0.357
2014 Huang Y, Sutter E, Sadowski JT, Cotlet M, Monti OL, Racke DA, Neupane MR, Wickramaratne D, Lake RK, Parkinson BA, Sutter P. Tin disulfide-an emerging layered metal dichalcogenide semiconductor: materials properties and device characteristics. Acs Nano. 8: 10743-55. PMID 25247490 DOI: 10.1021/Nn504481R  0.391
2014 Wickramaratne D, Zahid F, Lake RK. Electronic and thermoelectric properties of few-layer transition metal dichalcogenides. The Journal of Chemical Physics. 140: 124710. PMID 24697473 DOI: 10.1063/1.4869142  0.652
2014 Ionescu R, Wang W, Chai Y, Mutlu Z, Ruiz I, Favors Z, Wickramaratne D, Neupane M, Zavala L, Lake R, Ozkan M, Ozkan CS. Synthesis of atomically thin MoS2 triangles and hexagrams and their electrical transport properties Ieee Transactions On Nanotechnology. 13: 749-754. DOI: 10.1109/Tnano.2014.2319081  0.35
2014 Sylvia SS, Habib KMM, Khayer MA, Alam K, Neupane M, Lake RK. Effect of random, discrete source dopant distributions on nanowire tunnel FETs Ieee Transactions On Electron Devices. 61: 2208-2214. DOI: 10.1109/Ted.2014.2318521  0.795
2014 Yin G, Wickramaratne D, Zhao Y, Lake RK. Coulomb impurity scattering in topological insulator thin films Applied Physics Letters. 105: 33118. DOI: 10.1063/1.4891574  0.312
2014 Renteria J, Samnakay R, Jiang C, Pope TR, Goli P, Yan Z, Wickramaratne D, Salguero TT, Khitun AG, Lake RK, Balandin AA. All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits Journal of Applied Physics. 115. DOI: 10.1063/1.4862336  0.348
2014 Mutlu Z, Wickramaratne D, Bay HH, Favors ZJ, Ozkan M, Lake R, Ozkan CS. Synthesis, characterization, and electronic structure of few-layer MoSe2granular films Physica Status Solidi (a). 211: 2671-2676. DOI: 10.1002/Pssa.201431131  0.314
2014 Alaskar Y, Arafin S, Wickramaratne D, Zurbuchen MA, He L, Mckay J, Lin Q, Goorsky MS, Lake RK, Wang KL. Towards van der waals epitaxial growth of GaAs on Si using a graphene buffer layer Advanced Functional Materials. DOI: 10.1002/Adfm.201400960  0.329
2013 Habib KMM, Sylvia SS, Ge S, Neupane M, Lake RK. The coherent interlayer resistance of a single, rotated interface between two stacks of AB graphite Applied Physics Letters. 103. DOI: 10.1063/1.4841415  0.768
2013 Ahsan S, Masum Habib KM, Neupane MR, Lake RK. Interlayer magnetoconductance of misoriented bilayer graphene ribbons Journal of Applied Physics. 114. DOI: 10.1063/1.4830019  0.64
2013 Masum Habib KM, Zahid F, Lake RK. Multi-state current switching by voltage controlled coupling of crossed graphene nanoribbons Journal of Applied Physics. 114. DOI: 10.1063/1.4826264  0.645
2013 Yin G, Wickramaratne D, Lake RK. Tunneling spectroscopy of chiral states in ultra-thin topological insulators Journal of Applied Physics. 113: 63707. DOI: 10.1063/1.4790804  0.331
2012 Alam K, Lake RK. Monolayer $\hbox{MoS}_{2}$ Transistors Beyond the Technology Road Map Ieee Transactions On Electron Devices. 59: 3250-3254. DOI: 10.1109/Ted.2012.2218283  0.58
2012 Sylvia SS, Khayer MA, Alam K, Lake RK. Doping, Tunnel Barriers, and Cold Carriers in InAs and InSb Nanowire Tunnel Transistors Ieee Transactions On Electron Devices. 59: 2996-3001. DOI: 10.1109/Ted.2012.2212442  0.803
2012 Sylvia SS, Park H, Khayer MA, Alam K, Klimeck G, Lake RK. Material Selection for Minimizing Direct Tunneling in Nanowire Transistors Ieee Transactions On Electron Devices. 59: 2064-2069. DOI: 10.1109/Ted.2012.2200688  0.797
2012 Habib KMM, Lake RK. Current modulation by voltage control of the quantum phase in crossed graphene nanoribbons Physical Review B. 86: 45418. DOI: 10.1103/Physrevb.86.045418  0.381
2012 Neupane MR, Lake RK, Rahman R. Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores Journal of Applied Physics. 112. DOI: 10.1063/1.4739715  0.363
2012 Khan J, Nolen CM, Teweldebrhan D, Wickramaratne D, Lake RK, Balandin AA. Anomalous electron transport in back-gated field-effect transistors with TiTe2 semimetal thin-film channels Applied Physics Letters. 100: 043109. DOI: 10.1063/1.3679679  0.38
2011 Upadhyayula S, Bao D, Millare B, Sylvia SS, Habib KM, Ashraf K, Ferreira A, Bishop S, Bonderer R, Baqai S, Jing X, Penchev M, Ozkan M, Ozkan CS, Lake RK, et al. Permanent electric dipole moments of carboxyamides in condensed media: what are the limitations of theory and experiment? The Journal of Physical Chemistry. B. 115: 9473-90. PMID 21682315 DOI: 10.1021/Jp2045383  0.761
2011 Ashraf MK, Bruque NA, Tan JL, Beran GJ, Lake RK. Conductance switching in diarylethenes bridging carbon nanotubes. The Journal of Chemical Physics. 134: 024524. PMID 21241137 DOI: 10.1063/1.3528118  0.789
2011 Lin J, Teweldebrhan D, Ashraf K, Liu G, Jing X, Yan Z, Ozkan M, Lake RK, Balandin AA, Ozkan CS. DNA Gating effect from single layer graphene Mrs Proceedings. 1344. DOI: 10.1557/Opl.2011.1353  0.355
2011 Habib KMM, Ahsan S, Lake RK. Computational study of negative differential resistance in graphene bilayer nanostructures Proceedings of Spie. 8101. DOI: 10.1117/12.894252  0.665
2011 Sylvia SS, Khayer MA, Alam K, Lake RK. Design issue analysis for InAs nanowire tunnel FETs Proceedings of Spie. 8102. DOI: 10.1117/12.894249  0.8
2011 Neupane MR, Rahman R, Lake RK. Carrier leakage in Ge/Si core-shell nanocrystals for lasers: Core size and strain effects Proceedings of Spie - the International Society For Optical Engineering. 8102. DOI: 10.1117/12.894153  0.328
2011 Khayer MA, Lake RK. Effects of band-tails on the subthreshold characteristics of nanowire band-to-band tunneling transistors Journal of Applied Physics. 110: 74508. DOI: 10.1063/1.3642954  0.367
2011 Habib KMM, Zahid F, Lake RK. Negative differential resistance in bilayer graphene nanoribbons Applied Physics Letters. 98. DOI: 10.1063/1.3590772  0.654
2010 Lin J, Teweldebrhan D, Ashraf K, Liu G, Jing X, Yan Z, Li R, Ozkan M, Lake RK, Balandin AA, Ozkan CS. Gating of single-layer graphene with single-stranded deoxyribonucleic acids. Small (Weinheim An Der Bergstrasse, Germany). 6: 1150-5. PMID 20473987 DOI: 10.1002/Smll.200902379  0.367
2010 Khan MI, Martinez-Morales A, Penchev M, Yengel E, Jing X, Ozkan M, Lake R, Ozkan CS. Electrochemical Synthesis of Compositionally Modulated InxSb1–xNanowire Homojunctions and Their Tunneling AFM Characterization Journal of Nanoelectronics and Optoelectronics. 4: 312-315. DOI: 10.1166/Jno.2009.1046  0.338
2010 Zahid F, Lake R. Thermoelectric properties of Bi2 Te3 atomic quintuple thin films Applied Physics Letters. 97. DOI: 10.1063/1.3518078  0.646
2010 Khayer MA, Lake RK. Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors Journal of Applied Physics. 108: 104503. DOI: 10.1063/1.3510502  0.442
2010 Khayer MA, Lake RK. Diameter dependent performance of high-speed, low-power InAs nanowire field-effect transistors Journal of Applied Physics. 107: 14502. DOI: 10.1063/1.3275502  0.392
2010 Khayer MA, Lake RK. Modeling and performance analysis of high‐speed, low‐power InAs nanowire field‐effect transistors Physica Status Solidi (C). 7: 2514-2517. DOI: 10.1002/Pssc.200983879  0.368
2009 Ashraf MK, Millare B, Gerasimenko AA, Bao D, Pandey RR, Lake RK, Vullev VI. Theoretical design of bioinspired macromolecular electrets based on anthranilamide derivatives. Biotechnology Progress. 25: 915-22. PMID 19452534 DOI: 10.1002/Btpr.189  0.341
2009 Khayer MA, Lake RK. High-Speed and Low-Power Performance of n-type InSb/InP and InAs/InP Core/Shell Nanowire Field Effect Transistors for CMOS Logic Applications Mrs Proceedings. 1178. DOI: 10.1557/Proc-1178-Aa01-07  0.734
2009 Lin J, Teweldebrhan D, Ashraf K, Liu G, Jing X, Yan Z, Li R, Lake RK, Ozkan M, Balandin AA, Ozkan CS. Gating of single layer graphene using DNA Proceedings of Spie. 7403. DOI: 10.1117/12.826801  0.318
2009 Khayer MA, Lake RK. The Quantum and Classical Capacitance Limits of InSb and InAs Nanowire FETs Ieee Transactions On Electron Devices. 56: 2215-2223. DOI: 10.1109/Ted.2009.2028401  0.336
2009 Khayer MA, Lake RK. Drive Currents and Leakage Currents in InSb and InAs Nanowire and Carbon Nanotube Band-to-Band Tunneling FETs Ieee Electron Device Letters. 30: 1257-1259. DOI: 10.1109/Led.2009.2034277  0.425
2009 Bruque NA, Ashraf MK, Beran GJO, Helander TR, Lake RK. Conductance of a conjugated molecule with carbon nanotube contacts Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.155455  0.782
2009 Ashraf MK, Bruque NA, Pandey RR, Collins PG, Lake RK. Effect of localized oxygen functionalization on the conductance of metallic carbon nanotubes Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.115428  0.776
2009 Khayer MA, Lake RK. Performance analysis of InP nanowire band-to-band tunneling field-effect transistors Applied Physics Letters. 95: 73504. DOI: 10.1063/1.3212892  0.438
2008 Khayer MA, Lake RK. Performance of $n$ -Type InSb and InAs Nanowire Field-Effect Transistors Ieee Transactions On Electron Devices. 55: 2939-2945. DOI: 10.1109/Ted.2008.2005173  0.394
2007 Alam K, Lake R. Role of Doping in Carbon Nanotube Transistors With Source/Drain Underlaps Ieee Transactions On Nanotechnology. 6: 652-658. DOI: 10.1109/Tnano.2007.908170  0.609
2007 Alam K, Lake R. Performance Metrics of a 5 nm, Planar, Top Gate, Carbon Nanotube on Insulator (COI) Transistor Ieee Transactions On Nanotechnology. 6: 186-190. DOI: 10.1109/Tnano.2007.891821  0.62
2007 Bruque NA, Pandey RR, Lake RK. Electron transport through a conjugated molecule with carbon nanotube leads Physical Review B. 76. DOI: 10.1103/Physrevb.76.205322  0.778
2007 Shah D, Bruque NA, Alam K, Lake RK, Pandey RR. Electronic properties of carbon nanotubes calculated from density functional theory and the empirical π-bond model Journal of Computational Electronics. 6: 395-400. DOI: 10.1007/S10825-007-0147-5  0.79
2006 Wang X, Liu F, Andavan GT, Jing X, Singh K, Yazdanpanah VR, Bruque N, Pandey RR, Lake R, Ozkan M, Wang KL, Ozkan CS. Carbon nanotube-DNA nanoarchitectures and electronic functionality. Small (Weinheim An Der Bergstrasse, Germany). 2: 1356-65. PMID 17192987 DOI: 10.1002/Smll.200600056  0.796
2006 Bruque NA, Alam K, Pandey RR, Lake RK, Lewis JP, Wang X, Liu F, Ozkan CS, Ozkan M, Wang KL. Self-Assembled Carbon Nanotubes for Electronic Circuit and Device Applications Journal of Nanoelectronics and Optoelectronics. 1: 74-81. DOI: 10.1166/Jno.2006.007  0.791
2006 Alam K, Lake RK. Dielectric scaling of a zero-Schottky-barrier, 5nm gate, carbon nanotube transistor with source/drain underlaps Journal of Applied Physics. 100: 24317. DOI: 10.1063/1.2218764  0.618
2006 Singh KV, Pandey RR, Wang X, Lake R, Ozkan CS, Wang K, Ozkan M. Covalent functionalization of single walled carbon nanotubes with peptide nucleic acid: Nanocomponents for molecular level electronics Carbon. 44: 1730-1739. DOI: 10.1016/J.Carbon.2005.12.048  0.382
2006 Pandey RR, Bruque N, Alam K, Lake RK. Carbon nanotube - molecular resonant tunneling diode Physica Status Solidi (a). 203: R5-R7. DOI: 10.1002/Pssa.200521467  0.792
2005 Singh KV, Wang X, Pandey RR, Lake R, Ozkan CS, Ozkan M. Functionally Engineered Carbon Nanotubes-Peptide Nucleic Acid Nanocomponents Mrs Proceedings. 872. DOI: 10.1557/Proc-872-J13.7  0.336
2005 Zheng Y, Rivas C, Lake R, Alam K, Boykin T, Klimeck G. Electronic Properties of Silicon Nanowires Ieee Transactions On Electron Devices. 52: 1097-1103. DOI: 10.1109/Ted.2005.848077  0.681
2005 Bruque N, Pandey RR, Lake RK, Wang H, Lewis JP. Electronic transport through a CNT-Pseudopeptide-CNT hybrid material Molecular Simulation. 31: 859-864. DOI: 10.1080/08927020500323879  0.791
2005 Alam K, Lake RK. Leakage and performance of zero-Schottky-barrier carbon nanotube transistors Journal of Applied Physics. 98: 64307. DOI: 10.1063/1.2060962  0.622
2005 Alam K, Lake R. Performance of 2 nm gate length carbon nanotube field-effect transistors with source∕drain underlaps Applied Physics Letters. 87: 73104. DOI: 10.1063/1.2011788  0.635
2005 Green J, Boykin TB, Farmer CD, Garcia M, Ironside CN, Klimeck G, Lake R, Stanley CR. Quantum cascade laser gain medium modeling using a second-nearest-neighbor tight-binding model Superlattices and Microstructures. 37: 410-424. DOI: 10.1016/J.Spmi.2005.03.003  0.511
2004 Zheng Y, Lake R. Self-consistent transit-time model for a resonant tunnel diode Ieee Transactions On Electron Devices. 51: 535-541. DOI: 10.1109/Ted.2004.824683  0.309
2004 Chung SY, Jin N, Berger PR, Yu R, Thompson PE, Lake R, Rommel SL, Kurinec SK. Three-terminal Si-based negative differential resistance circuit element with adjustable peak-to-valley current ratios using a monolithic vertical integration Applied Physics Letters. 84: 2688-2690. DOI: 10.1063/1.1690109  0.342
2003 Jin N, Chung SY, Rice AT, Berger PR, Thompson PE, Rivas C, Lake R, Sudirgo S, Kempisty JJ, Curanovic B, Rommel SL, Hirschman KD, Kurinec SK, Chi PH, Simons DS. Diffusion barrier cladding in Si/SiGe resonant interband tunneling diodes and their patterned growth on PMOS source/drain regions Ieee Transactions On Electron Devices. 50: 1876-1884. DOI: 10.1109/Ted.2003.815375  0.349
2003 Jin N, Chung SY, Rice AT, Berger PR, Yu R, Thompson PE, Lake R. 151 kA/cm2 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications Applied Physics Letters. 83: 3308-3310. DOI: 10.1063/1.1618927  0.34
2003 Rivas C, Lake R, Frensley WR, Klimeck G, Thompson PE, Hobart KD, Rommel SL, Berger PR. Full band modeling of the excess current in a delta-doped silicon tunnel diode Journal of Applied Physics. 94: 5005-5013. DOI: 10.1063/1.1606114  0.573
2003 Zheng Y, Lake R. Barrier asymmetry and the mm-wave performance of resonant tunnel diodes Superlattices and Microstructures. 34: 355-360. DOI: 10.1016/J.Spmi.2004.03.065  0.325
2003 Rivas C, Lake R. Non-equilibrium Green function implementation of boundary conditions for full band simulations of substrate-nanowire structures Physica Status Solidi (B) Basic Research. 239: 94-102. DOI: 10.1002/Pssb.200303240  0.361
2001 Rivas C, Lake R, Klimeck G, Frensley WR, Fischetti MV, Thompson PE, Rommel SL, Berger PR. Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts Applied Physics Letters. 78: 814-816. DOI: 10.1063/1.1343500  0.578
2000 Dashiell MW, Troeger RT, Rommel SL, Adam TN, Berger PR, Guedj C, Kolodzey J, Seabaugh AC, Lake R. Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing Ieee Transactions On Electron Devices. 47: 1707-1714. DOI: 10.1109/16.861581  0.366
2000 Boykin TB, Klimeck G, Bowen RC, Lake R. Erratum: Effective-mass reproducibility of the nearest-neighborsp3s*models: Analytic results [Phys. Rev. B56, 4102 (1997)] Physical Review B. 61: 5033-5033. DOI: 10.1103/Physrevb.61.5033  0.464
2000 Thompson PE, Hobart KD, Twigg ME, Rommel SL, Jin N, Berger PR, Lake R, Seabaugh AC, Chi PH, Simons DS. Epitaxial Si-based tunnel diodes Thin Solid Films. 380: 145-150. DOI: 10.1016/S0040-6090(00)01490-5  0.343
1999 Rommel SL, Dillon TE, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC. Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities Ieee Electron Device Letters. 20: 329-331. DOI: 10.1109/55.772366  0.369
1999 Wilkins R, Shojah-Ardalan S, Kirk WP, Spencer GF, Bate RT, Seabaugh AC, Lake R. Lonization and displacement damage irradiation studies of quantum devices: Resonant tunneling diodes and two-dimensional electron gas transistors Ieee Transactions On Nuclear Science. 46: 1702-1707. DOI: 10.1109/23.819142  0.304
1999 Boykin TB, Lake RK, Klimeck G, Swaminathan M. Interface effects in tunneling models with identical real and complex dispersions Physical Review B. 59: 7316-7319. DOI: 10.1103/Physrevb.59.7316  0.479
1999 Thompson PE, Hobart KD, Twigg ME, Jernigan GG, Dillon TE, Rommel SL, Berger PR, Simons DS, Chi PH, Lake R, Seabaugh AC. Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy Applied Physics Letters. 75: 1308-1310. DOI: 10.1063/1.124677  0.332
1998 Lake R, Klimeck G, Bowen RC, Jovanovic D, Sotirelis P, Frensley WR. A Generalized Tunneling Formula for Quantum Device Modeling Vlsi Design. 6: 9-12. DOI: 10.1155/1998/84503  0.545
1998 Klimeck G, Lake RK, Bowen RC, Fernando CL, Frensley WR. Resolution of Resonances in a General Purpose Quantum Device Simulator (NEMO) Vlsi Design. 6: 107-110. DOI: 10.1155/1998/43043  0.521
1998 Klimeck G, Blanks D, Lake R, Bowen RC, Fernando CL, Leng M, Frensley WR, Jovanovic D, Sotirelis P. Writing Research Software in a Large Group for the NEMO Project Vlsi Design. 8: 79-86. DOI: 10.1155/1998/35374  0.515
1998 Klimeck G, Lake R, Blanks DK. Role of interface roughness scattering in self-consistent resonant-tunneling-diode simulations Physical Review B. 58: 7279-7285. DOI: 10.1103/Physrevb.58.7279  0.506
1998 Klimeck G, Lake R, Blanks DK. Numerical approximations to the treatment of interface roughness scattering in resonant tunnelling diodes Semiconductor Science and Technology. 13: A165-A168. DOI: 10.1088/0268-1242/13/8A/047  0.512
1998 Lake R, Klimeck G, Blanks D. Interface roughness and polar optical phonon scattering in RTDs Semiconductor Science and Technology. 13: A163-A164. DOI: 10.1088/0268-1242/13/8A/046  0.522
1998 Rommel SL, Dillon TE, Dashiell MW, Feng H, Kolodzey J, Berger PR, Thompson PE, Hobart KD, Lake R, Seabaugh AC, Klimeck G, Blanks DK. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes Applied Physics Letters. 73: 2191-2193. DOI: 10.1063/1.122419  0.54
1997 Seabaugh A, Lake R, Brar B, Wallacet R, Wilk G. Beyond-The-Roadmap Technology: Silicon Heterojunctions, Optoelectronics, and Quantum Devices Mrs Proceedings. 486. DOI: 10.1557/Proc-486-67  0.33
1997 Boykin TB, Klimeck G, Bowen RC, Lake R. Effective-mass reproducibility of the nearest-neighborsp3s*models: Analytic results Physical Review B. 56: 4102-4107. DOI: 10.1103/Physrevb.56.4102  0.469
1997 Lake R, Klimeck G, Bowen RC, Jovanovic D. Single and multiband modeling of quantum electron transport through layered semiconductor devices Journal of Applied Physics. 81: 7845-7869. DOI: 10.1063/1.365394  0.557
1997 Bowen RC, Klimeck G, Lake RK, Frensley WR, Moise T. Quantitative simulation of a resonant tunneling diode Journal of Applied Physics. 81: 3207-3213. DOI: 10.1063/1.364151  0.558
1997 Klimeck G, Lake R, Blanks D, Fernando CL, Bowen C, Moise T, Kao YC. The Effects of Electron Screening Length and Emitter Quasi-Bound States on the Polar-Optical Phonon Scattering in Resonant Tunneling Diodes Physica Status Solidi (B). 204: 408-411. DOI: 10.1002/1521-3951(199711)204:1<408::Aid-Pssb408>3.0.Co;2-V  0.529
1997 Lake R, Klimeck G, Bowen RC, Jovanovic D, Blanks D, Swaminathan M. Quantum Transport with Band-Structure and Schottky Contacts Physica Status Solidi (B). 204: 354-357. DOI: 10.1002/1521-3951(199711)204:1<354::Aid-Pssb354>3.0.Co;2-V  0.538
1996 Lake R, Klimeck G, Bowen R, Fernando C, Moise T, Kao Y, Leng M. Interface roughness, polar optical phonons, and the valley current of a resonant tunneling diode Superlattices and Microstructures. 20: 279-285. DOI: 10.1006/Spmi.1996.0079  0.535
1995 Klimeck G, Lake R, Bowen RC, Frensley WR, Moise TS. Quantum device simulation with a generalized tunneling formula Applied Physics Letters. 67: 2539-2541. DOI: 10.1063/1.114451  0.53
1994 Klimeck G, Lake R, Datta S, Bryant GW. Elastic and inelastic scattering in quantum dots in the Coulomb-blockade regime. Physical Review B. 50: 5484-5496. PMID 9976892 DOI: 10.1103/Physrevb.50.5484  0.591
1994 Huang K, Carroll M, Starnes G, Lake R, Janes D, Webb K, Melloch M. Numerically generated resonant tunneling diode equivalent circuit parameters Journal of Applied Physics. 76: 3850-3857. DOI: 10.1063/1.357389  0.329
1993 Lake R, Klimeck G, Datta S. Rate equations from the Keldysh formalism applied to the phonon peak in resonant-tunneling diodes. Physical Review B. 47: 6427-6438. PMID 10004608 DOI: 10.1103/Physrevb.47.6427  0.607
1993 Lake R, Klimeck G, Anantram MP, Datta S. Rate equations for the phonon peak in resonant-tunneling structures Physical Review B. 48: 15132-15137. DOI: 10.1103/Physrevb.48.15132  0.638
1992 Lake R, Datta S. Energy balance and heat exchange in mesoscopic systems. Physical Review B. 46: 4757-4763. PMID 10004235 DOI: 10.1103/Physrevb.46.4757  0.505
1992 Bagwell PF, Lake RK. Resonances in transmission through an oscillating barrier. Physical Review B. 46: 15329-15336. PMID 10003650 DOI: 10.1103/Physrevb.46.15329  0.321
1992 Lake R, Datta S. Nonequilibrium Green's-function method applied to double-barrier resonant-tunneling diodes. Physical Review B. 45: 6670-6685. PMID 10000428 DOI: 10.1103/Physrevb.45.6670  0.558
1992 Lake R, Datta S. High-bias quantum electron transport Superlattices and Microstructures. 11: 83-87. DOI: 10.1016/0749-6036(92)90367-E  0.547
1992 Lee Y, McLennan M, Klimeck G, Lake R, Datta S. Quantum kinetic analysis of mesoscopic systems: Linear response Superlattices and Microstructures. 11: 137-140. DOI: 10.1016/0749-6036(92)90237-Y  0.61
1991 Datta S, Lake RK. Voltage probes and inelastic scattering. Physical Review B. 44: 6538-6541. PMID 9998523 DOI: 10.1103/Physrevb.44.6538  0.47
1991 Neofotistos G, Lake R, Datta S. Inelastic-scattering effects on single-barrier tunneling. Physical Review B. 43: 2442-2445. PMID 9997530 DOI: 10.1103/Physrevb.43.2442  0.463
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