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Rajib Rahman, Ph.D. - Publications

Affiliations: 
2009 Electrical and Computer Engineering Purdue University, West Lafayette, IN, United States 
Area:
Electronics and Electrical Engineering, Condensed Matter Physics, Materials Science Engineering
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95 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2024 Hsueh YL, Keith D, Chung Y, Gorman SK, Kranz L, Monir S, Kembrey Z, Keizer JG, Rahman R, Simmons MY. Engineering Spin-Orbit Interactions in Silicon Qubits at the Atomic-Scale. Advanced Materials (Deerfield Beach, Fla.). e2312736. PMID 38506626 DOI: 10.1002/adma.202312736  0.335
2024 Aliyar T, Ma H, Krishnan R, Singh G, Chong BQ, Wang Y, Verzhbitskiy I, Yu Wong CP, Johnson Goh KE, Shen ZX, Koh TS, Rahman R, Weber B. Symmetry Breaking and Spin-Orbit Coupling for Individual Vacancy-Induced In-Gap States in MoS Monolayers. Nano Letters. PMID 38323571 DOI: 10.1021/acs.nanolett.3c03681  0.352
2023 Jones MT, Monir MS, Krauth FN, Macha P, Hsueh YL, Worrall A, Keizer JG, Kranz L, Gorman SK, Chung Y, Rahman R, Simmons MY. Atomic Engineering of Molecular Qubits for High-Speed, High-Fidelity Single Qubit Gates. Acs Nano. PMID 37930801 DOI: 10.1021/acsnano.3c06668  0.403
2023 Krishnan R, Biswas S, Hsueh YL, Ma H, Rahman R, Weber B. Spin-Valley Locking for In-Gap Quantum Dots in a MoS Transistor. Nano Letters. PMID 37363814 DOI: 10.1021/acs.nanolett.3c01779  0.302
2022 McJunkin T, Harpt B, Feng Y, Losert MP, Rahman R, Dodson JP, Wolfe MA, Savage DE, Lagally MG, Coppersmith SN, Friesen M, Joynt R, Eriksson MA. SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits. Nature Communications. 13: 7777. PMID 36522370 DOI: 10.1038/s41467-022-35510-z  0.391
2022 Paquelet Wuetz B, Losert MP, Koelling S, Stehouwer LEA, Zwerver AJ, Philips SGJ, Mądzik MT, Xue X, Zheng G, Lodari M, Amitonov SV, Samkharadze N, Sammak A, Vandersypen LMK, Rahman R, et al. Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots. Nature Communications. 13: 7730. PMID 36513678 DOI: 10.1038/s41467-022-35458-0  0.414
2022 Kranz L, Gorman SK, Thorgrimsson B, Monir S, He Y, Keith D, Charde K, Keizer JG, Rahman R, Simmons MY. The Use of Exchange Coupled Atom Qubits as Atomic-Scale Magnetic Field Sensors. Advanced Materials (Deerfield Beach, Fla.). e2201625. PMID 36208088 DOI: 10.1002/adma.202201625  0.359
2021 Chan KW, Sahasrabudhe H, Huang W, Wang Y, Yang HC, Veldhorst M, Hwang JCC, Mohiyaddin FA, Hudson FE, Itoh KM, Saraiva A, Morello A, Laucht A, Rahman R, Dzurak AS. Exchange Coupling in a Linear Chain of Three Quantum-Dot Spin Qubits in Silicon. Nano Letters. PMID 33481612 DOI: 10.1021/acs.nanolett.0c04771  0.38
2020 Sengupta P, Khandekar C, Van Mechelen T, Rahman R, Jacob Z. Electron g -factor engineering for nonreciprocal spin photonics Physical Review B. 101. DOI: 10.1103/Physrevb.101.035412  0.348
2019 Pang CS, Chen CY, Ameen T, Zhang S, Ilatikhameneh H, Rahman R, Klimeck G, Chen Z. WSe Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing. Small (Weinheim An Der Bergstrasse, Germany). e1902770. PMID 31448564 DOI: 10.1002/Smll.201902770  0.634
2019 Ameen TA, Ilatikhameneh H, Fay P, Seabaugh A, Rahman R, Klimeck G. Alloy Engineered Nitride Tunneling Field-Effect Transistor: A Solution for the Challenge of Heterojunction TFETs Ieee Transactions On Electron Devices. 66: 736-742. DOI: 10.1109/Ted.2018.2877753  0.607
2019 Nakamura J, Fallahi S, Sahasrabudhe H, Rahman R, Liang S, Gardner GC, Manfra MJ. Aharonov–Bohm interference of fractional quantum Hall edge modes Nature Physics. 15: 563-569. DOI: 10.1038/S41567-019-0441-8  0.419
2018 Wu P, Ameen T, Zhang H, Bendersky LA, Ilatikhameneh H, Klimeck G, Rahman R, Davydov AV, Appenzeller J. Complementary Black Phosphorus Tunneling Field-Effect Transistors. Acs Nano. PMID 30563322 DOI: 10.1021/Acsnano.8B06441  0.621
2018 Hile SJ, Fricke L, House MG, Peretz E, Chen CY, Wang Y, Broome M, Gorman SK, Keizer JG, Rahman R, Simmons MY. Addressable electron spin resonance using donors and donor molecules in silicon. Science Advances. 4: eaaq1459. PMID 30027114 DOI: 10.1126/Sciadv.Aaq1459  0.438
2018 Ameen TA, Ilatikhameneh H, Tankasala A, Hsueh Y, Charles J, Fonseca J, Povolotskyi M, Kim JO, Krishna S, Allen MS, Allen JW, Rahman R, Klimeck G. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot. Beilstein Journal of Nanotechnology. 9: 1075-1084. PMID 29719758 DOI: 10.3762/Bjnano.9.99  0.598
2018 Ilatikhameneh H, Ameen T, Chen F, Sahasrabudhe H, Klimeck G, Rahman R. Dramatic Impact of Dimensionality on the Electrostatics of P-N Junctions and Its Sensing and Switching Applications Ieee Transactions On Nanotechnology. 17: 293-298. DOI: 10.1109/Tnano.2018.2799960  0.533
2018 Chen C, Ameen TA, Ilatikhameneh H, Rahman R, Klimeck G, Appenzeller J. Channel Thickness Optimization for Ultrathin and 2-D Chemically Doped TFETs Ieee Transactions On Electron Devices. 65: 4614-4621. DOI: 10.1109/Ted.2018.2862408  0.557
2018 Chen F, Ilatikhameneh H, Tan Y, Klimeck G, Rahman R. Switching Mechanism and the Scalability of Vertical-TFETs Ieee Transactions On Electron Devices. 65: 3065-3068. DOI: 10.1109/Ted.2018.2831688  0.563
2018 Ilatikhameneh H, Ameen TA, Chen C, Klimeck G, Rahman R. Sensitivity Challenge of Steep Transistors Ieee Transactions On Electron Devices. 65: 1633-1639. DOI: 10.1109/Ted.2018.2808040  0.579
2018 Salfi J, Voisin B, Tankasala A, Bocquel J, Usman M, Simmons MY, Hollenberg LCL, Rahman R, Rogge S. Valley Filtering in Spatial Maps of Coupling between Silicon Donors and Quantum Dots Physical Review X. 8: 31049. DOI: 10.1103/Physrevx.8.031049  0.51
2018 Ferdous R, Chan KW, Veldhorst M, Hwang JCC, Yang CH, Sahasrabudhe H, Klimeck G, Morello A, Dzurak AS, Rahman R. Interface-induced spin-orbit interaction in silicon quantum dots and prospects for scalability Physical Review B. 97. DOI: 10.1103/Physrevb.97.241401  0.619
2018 Tankasala A, Salfi J, Bocquel J, Voisin B, Usman M, Klimeck G, Simmons MY, Hollenberg LCL, Rogge S, Rahman R. Two-electron states of a group-V donor in silicon from atomistic full configuration interactions Physical Review B. 97. DOI: 10.1103/Physrevb.97.195301  0.683
2018 Sahasrabudhe H, Novakovic B, Nakamura J, Fallahi S, Povolotskyi M, Klimeck G, Rahman R, Manfra MJ. Optimization of edge state velocity in the integer quantum Hall regime Physical Review B. 97. DOI: 10.1103/Physrevb.97.085302  0.595
2018 Weber B, Hsueh Y, Watson TF, Li R, Hamilton AR, Hollenberg LCL, Rahman R, Simmons MY. Spin–orbit coupling in silicon for electrons bound to donors Npj Quantum Information. 4. DOI: 10.1038/S41534-018-0111-1  0.469
2018 Ferdous R, Kawakami E, Scarlino P, Nowak MP, Ward DR, Savage DE, Lagally MG, Coppersmith SN, Friesen M, Eriksson MA, Vandersypen LMK, Rahman R. Valley dependent anisotropic spin splitting in silicon quantum dots Npj Quantum Information. 4: 26. DOI: 10.1038/S41534-018-0075-1  0.463
2017 Watson TF, Weber B, Hsueh YL, Hollenberg LLC, Rahman R, Simmons MY. Atomically engineered electron spin lifetimes of 30 s in silicon. Science Advances. 3: e1602811. PMID 29159289 DOI: 10.1126/Sciadv.1602811  0.474
2017 Tosi G, Mohiyaddin FA, Schmitt V, Tenberg S, Rahman R, Klimeck G, Morello A. Silicon quantum processor with robust long-distance qubit couplings. Nature Communications. 8: 450. PMID 28878207 DOI: 10.1038/S41467-017-00378-X  0.654
2017 Zheng C, Zhang Q, Weber B, Ilatikhameneh H, Chen F, Sahasrabudhe H, Rahman R, Li S, Chen Z, Hellerstedt J, Zhang Y, Duan WH, Bao Q, Fuhrer MS. Direct Observation of 2D Electrostatics and Ohmic Contacts in Template-Grown Graphene/WS2 Heterostructures. Acs Nano. PMID 28221762 DOI: 10.1021/Acsnano.6B07832  0.322
2017 Huang JZ, Long P, Povolotskyi M, Ilatikhameneh H, Ameen TA, Rahman R, Rodwell MJW, Klimeck G. A Multiscale Modeling of Triple-Heterojunction Tunneling FETs Ieee Transactions On Electron Devices. 64: 2728-2735. DOI: 10.1109/Ted.2017.2690669  0.553
2017 Ameen TA, Ilatikhameneh H, Huang JZ, Povolotskyi M, Rahman R, Klimeck G. Combination of Equilibrium and Nonequilibrium Carrier Statistics Into an Atomistic Quantum Transport Model for Tunneling Heterojunctions Ieee Transactions On Electron Devices. 64: 2512-2518. DOI: 10.1109/Ted.2017.2690626  0.611
2017 Chen FW, Ilatikhameneh H, Ameen TA, Klimeck G, Rahman R. Thickness Engineered Tunnel Field-Effect Transistors Based on Phosphorene Ieee Electron Device Letters. 38: 130-133. DOI: 10.1109/Led.2016.2627538  0.609
2017 Chen F, Ilatikhameneh H, Tan Y, Valencia D, Klimeck G, Rahman R. Transport in vertically stacked hetero-structures from 2D materials Journal of Physics: Conference Series. 864: 012053. DOI: 10.1088/1742-6596/864/1/012053  0.596
2016 Wang Y, Chen CY, Klimeck G, Simmons MY, Rahman R. Corrigendum: Characterizing Si:P quantum dot qubits with spin resonance techniques. Scientific Reports. 6: 38120. PMID 27901074 DOI: 10.1038/Srep38120  0.591
2016 Wang Y, Chen CY, Klimeck G, Simmons MY, Rahman R. Characterizing Si:P quantum dot qubits with spin resonance techniques. Scientific Reports. 6: 31830. PMID 27550779 DOI: 10.1038/Srep31830  0.644
2016 Ilatikhameneh H, Ameen T, Novakovic B, Tan Y, Klimeck G, Rahman R. Saving Moore's Law Down To 1 nm Channels With Anisotropic Effective Mass. Scientific Reports. 6: 31501. PMID 27538849 DOI: 10.1038/Srep31501  0.573
2016 Ameen TA, Ilatikhameneh H, Klimeck G, Rahman R. Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors. Scientific Reports. 6: 28515. PMID 27345020 DOI: 10.1038/Srep28515  0.59
2016 Usman M, Bocquel J, Salfi J, Voisin B, Tankasala A, Rahman R, Simmons MY, Rogge S, Hollenberg LC. Spatial metrology of dopants in silicon with exact lattice site precision. Nature Nanotechnology. PMID 27271965 DOI: 10.1038/Nnano.2016.83  0.577
2016 Salfi J, Mol JA, Rahman R, Klimeck G, Simmons MY, Hollenberg LC, Rogge S. Quantum simulation of the Hubbard model with dopant atoms in silicon. Nature Communications. 7: 11342. PMID 27094205 DOI: 10.1038/Ncomms11342  0.618
2016 Ilatikhameneh H, Salazar RB, Klimeck G, Rahman R, Appenzeller J. From Fowler-Nordheim to Nonequilibrium Green's Function Modeling of Tunneling Ieee Transactions On Electron Devices. 63: 2871-2878. DOI: 10.1109/Ted.2016.2565582  0.596
2016 Ilatikhameneh H, Klimeck G, Rahman R. Can Homojunction Tunnel FETs Scale Below 10 nm? Ieee Electron Device Letters. 37: 115-118. DOI: 10.1109/Led.2015.2501820  0.498
2016 Ilatikhameneh H, Ameen TA, Klimeck G, Rahman R. Universal Behavior of Atomistic Strain in Self-Assembled Quantum Dots Ieee Journal of Quantum Electronics. 52: 1-8. DOI: 10.1109/Jqe.2016.2573959  0.552
2016 Ilatikhameneh H, Klimeck G, Appenzeller J, Rahman R. Design rules for high performance tunnel transistors from 2-D materials Ieee Journal of the Electron Devices Society. 4: 260-265. DOI: 10.1109/Jeds.2016.2568219  0.606
2016 Chen FW, Ilatikhameneh H, Klimeck G, Chen Z, Rahman R. Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET Ieee Journal of the Electron Devices Society. 4: 124-128. DOI: 10.1109/Jeds.2016.2539919  0.583
2016 Mohiyaddin FA, Kalra R, Laucht A, Rahman R, Klimeck G, Morello A. Transport of spin qubits with donor chains under realistic experimental conditions Physical Review B. 94. DOI: 10.1103/Physrevb.94.045314  0.603
2016 Wang Y, Tankasala A, Hollenberg LCL, Klimeck G, Simmons MY, Rahman R. Highly tunable exchange in donor qubits in silicon Npj Quantum Information. 2. DOI: 10.1038/Npjqi.2016.8  0.652
2015 Laucht A, Muhonen JT, Mohiyaddin FA, Kalra R, Dehollain JP, Freer S, Hudson FE, Veldhorst M, Rahman R, Klimeck G, Itoh KM, Jamieson DN, McCallum JC, Dzurak AS, Morello A. Electrically controlling single-spin qubits in a continuous microwave field. Science Advances. 1: e1500022. PMID 26601166 DOI: 10.1126/Sciadv.1500022  0.638
2015 Chu T, Ilatikhameneh H, Klimeck G, Rahman R, Chen Z. Electrically Tunable Bandgaps in Bilayer MoS2. Nano Letters. PMID 26560813 DOI: 10.1021/Acs.Nanolett.5B03218  0.566
2015 Usman M, Rahman R, Salfi J, Bocquel J, Voisin B, Rogge S, Klimeck G, Hollenberg LL. Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 154207. PMID 25783758 DOI: 10.1088/0953-8984/27/15/154207  0.608
2015 Voisin B, Salfi J, Bocquel J, Rahman R, Rogge S. Spatially resolved resonant tunneling on single atoms in silicon. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 27: 154203. PMID 25782866 DOI: 10.1088/0953-8984/27/15/154203  0.471
2015 Neupane MR, Rahman R, Lake RK. Effect of strain on the electronic and optical properties of Ge-Si dome shaped nanocrystals. Physical Chemistry Chemical Physics : Pccp. 17: 2484-93. PMID 25493297 DOI: 10.1039/C4Cp03711A  0.397
2015 Tan YHM, Ryu H, Weber B, Lee S, Rahman R, Hollenberg LCL, Simmons MY, Klimeck G. Statistical modeling of ultra-scaled donor-based silicon phosphorus devices 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348589  0.7
2015 Weber B, Tan YHM, Mahapatra S, Watson TF, Ryu H, Lee S, Rahman R, Hollenberg LCL, Klimeck G, Simmons MY. Silicon at the fundamental scaling limit-atomic-scale donor-based quantum electronics 2014 Silicon Nanoelectronics Workshop, Snw 2014. DOI: 10.1109/SNW.2014.7348550  0.709
2015 Ilatikhameneh H, Rahman R, Appenzeller J, Klimeck G. Electrically doped WTe2 tunnel transistors International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 270-272. DOI: 10.1109/SISPAD.2015.7292311  0.558
2015 Chen FW, Ilatikhameneh H, Klimeck G, Rahman R, Chu T, Chen Z. Achieving a higher performance in bilayer graphene FET - Strain engineering International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2015: 177-181. DOI: 10.1109/SISPAD.2015.7292288  0.484
2015 Ilatikhameneh H, Ameen TA, Klimeck G, Appenzeller J, Rahman R. Dielectric Engineered Tunnel Field-Effect Transistor Ieee Electron Device Letters. 36: 1097-1100. DOI: 10.1109/Led.2015.2474147  0.572
2015 Ilatikhameneh H, Klimeck G, Appenzeller J, Rahman R. Scaling Theory of Electrically Doped 2D Transistors Ieee Electron Device Letters. 36: 726-728. DOI: 10.1109/Led.2015.2436356  0.578
2015 Li W, Sharmin S, Ilatikhameneh H, Rahman R, Lu Y, Wang J, Yan X, Seabaugh A, Klimeck G, Jena D, Fay P. Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 28-34. DOI: 10.1109/Jxcdc.2015.2426433  0.571
2015 Ilatikhameneh H, Tan Y, Novakovic B, Klimeck G, Rahman R, Appenzeller J. Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials Ieee Journal On Exploratory Solid-State Computational Devices and Circuits. 1: 12-18. DOI: 10.1109/Jxcdc.2015.2423096  0.626
2015 Ameen TA, Ilatikhameneh H, Valencia D, Rahman R, Klimeck G. Engineering the optical transitions of self-assembled quantum dots 18th International Workshop On Computational Electronics, Iwce 2015. DOI: 10.1109/IWCE.2015.7301940  0.513
2015 Usman M, Hill CD, Rahman R, Klimeck G, Simmons MY, Rogge S, Hollenberg LCL. Strain and electric field control of hyperfine interactions for donor spin qubits in silicon Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.245209  0.644
2015 Salazar RB, Ilatikhameneh H, Rahman R, Klimeck G, Appenzeller J. A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations Journal of Applied Physics. 118. DOI: 10.1063/1.4934682  0.602
2015 Mol JA, Salfi J, Rahman R, Hsueh Y, Miwa JA, Klimeck G, Simmons MY, Rogge S. Interface-induced heavy-hole/light-hole splitting of acceptors in silicon Applied Physics Letters. 106. DOI: 10.1063/1.4921640  0.586
2014 Pla JJ, Mohiyaddin FA, Tan KY, Dehollain JP, Rahman R, Klimeck G, Jamieson DN, Dzurak AS, Morello A. Coherent control of a single ²⁹Si nuclear spin qubit. Physical Review Letters. 113: 246801. PMID 25541792 DOI: 10.1103/Physrevlett.113.246801  0.571
2014 Hsueh YL, Büch H, Tan Y, Wang Y, Hollenberg LC, Klimeck G, Simmons MY, Rahman R. Spin-lattice relaxation times of single donors and donor clusters in silicon. Physical Review Letters. 113: 246406. PMID 25541787 DOI: 10.1103/Physrevlett.113.246406  0.597
2014 Weber B, Tan YH, Mahapatra S, Watson TF, Ryu H, Rahman R, Hollenberg LC, Klimeck G, Simmons MY. Spin blockade and exchange in Coulomb-confined silicon double quantum dots. Nature Nanotechnology. 9: 430-5. PMID 24727686 DOI: 10.1038/Nnano.2014.63  0.712
2014 Salfi J, Mol JA, Rahman R, Klimeck G, Simmons MY, Hollenberg LC, Rogge S. Spatially resolving valley quantum interference of a donor in silicon. Nature Materials. 13: 605-10. PMID 24705384 DOI: 10.1038/Nmat3941  0.647
2014 Ameen T, Ilatikhameneh H, Charles J, Hsueh Y, Chen S, Fonseca J, Povolotskyi M, Rahman R, Klimeck G. Optimization of the anharmonic strain model to capture realistic strain distributions in quantum dots 14th Ieee International Conference On Nanotechnology, Ieee-Nano 2014. 921-924. DOI: 10.1109/NANO.2014.6968137  0.479
2013 Nguyen KT, Lilly MP, Nielsen E, Bishop N, Rahman R, Young R, Wendt J, Dominguez J, Pluym T, Stevens J, Lu TM, Muller R, Carroll MS. Charge sensed Pauli blockade in a metal-oxide-semiconductor lateral double quantum dot. Nano Letters. 13: 5785-90. PMID 24199677 DOI: 10.1021/Nl4020759  0.455
2013 Büch H, Mahapatra S, Rahman R, Morello A, Simmons MY. Spin readout and addressability of phosphorus-donor clusters in silicon. Nature Communications. 4: 2017. PMID 23774081 DOI: 10.1038/Ncomms3017  0.436
2013 Mohiyaddin FA, Rahman R, Kalra R, Klimeck G, Hollenberg LC, Pla JJ, Dzurak AS, Morello A. Noninvasive spatial metrology of single-atom devices. Nano Letters. 13: 1903-9. PMID 23570240 DOI: 10.1021/Nl303863S  0.595
2013 Lansbergen GP, Rahman R, Verduijn J, Tettamanzi GC, Collaert N, Biesemans S, Klimeck G, Hollenberg LCL, Rogge S. Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade [Phys. Rev. Lett.107, 136602 (2011)] Physical Review Letters. 110. DOI: 10.1103/Physrevlett.110.049901  0.551
2012 Witzel WM, Rahman R, Carroll MS. Nuclear spin induced decoherence of a quantum dot in Si confined at a SiGe interface: Decoherence dependence on 73Ge Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.205312  0.46
2012 Rahman R, Nielsen E, Muller RP, Carroll MS. Voltage controlled exchange energies of a two-electron silicon double quantum dot with and without charge defects in the dielectric Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.125423  0.471
2012 Nielsen E, Rahman R, Muller RP. A many-electron tight binding method for the analysis of quantum dot systems Journal of Applied Physics. 112. DOI: 10.1063/1.4759256  0.452
2012 Neupane MR, Lake RK, Rahman R. Electronic states of Ge/Si nanocrystals with crescent-shaped Ge-cores Journal of Applied Physics. 112. DOI: 10.1063/1.4739715  0.45
2011 Lansbergen GP, Rahman R, Verduijn J, Tettamanzi GC, Collaert N, Biesemans S, Klimeck G, Hollenberg LC, Rogge S. Lifetime-enhanced transport in silicon due to spin and valley blockade. Physical Review Letters. 107: 136602. PMID 22026881 DOI: 10.1103/Physrevlett.107.136602  0.656
2011 Rahman R, Park SH, Klimeck G, Hollenberg LC. Stark tuning of the charge states of a two-donor molecule in silicon. Nanotechnology. 22: 225202. PMID 21454928 DOI: 10.1088/0957-4484/22/22/225202  0.618
2011 Neupane MR, Rahman R, Lake RK. Carrier leakage in Ge/Si core-shell nanocrystals for lasers: Core size and strain effects Proceedings of Spie - the International Society For Optical Engineering. 8102. DOI: 10.1117/12.894153  0.391
2011 Rahman R, Lansbergen GP, Verduijn J, Tettamanzi GC, Park SH, Collaert N, Biesemans S, Klimeck G, Hollenberg LCL, Rogge S. Electric Field Reduced Charging Energies and Two-Electron Bound Excited States of Single Donors in Silicon Physical Review B. 84. DOI: 10.1103/Physrevb.84.115428  0.584
2011 Rahman R, Verduijn J, Kharche N, Lansbergen GP, Klimeck G, Hollenberg LCL, Rogge S. Publisher’s Note: Engineered valley-orbit splittings in quantum-confined nanostructures in silicon [Phys. Rev. B83, 195323 (2011)] Physical Review B. 83. DOI: 10.1103/Physrevb.83.239904  0.749
2011 Rahman R, Verduijn J, Kharche N, Lansbergen GP, Klimeck G, Hollenberg LCL, Rogge S. Engineered valley-orbit splittings in quantum-confined nanostructures in silicon Physical Review B. 83. DOI: 10.1103/Physrevb.83.195323  0.793
2011 Neupane MR, Lake RK, Rahman R. Core size dependence of the confinement energies, barrier heights, and hole lifetimes in Ge-core/Si-shell nanocrystals Journal of Applied Physics. 110. DOI: 10.1063/1.3642970  0.345
2010 Rahman R, Muller RP, Levy JE, Carroll MS, Klimeck G, Greentree AD, Hollenberg LCL. Coherent electron transport by adiabatic passage in an imperfect donor chain Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.155315  0.658
2009 Park SH, Rahman R, Klimeck G, Hollenberg LC. Mapping donor electron wave function deformations at a sub-Bohr orbit resolution. Physical Review Letters. 103: 106802. PMID 19792334 DOI: 10.1103/Physrevlett.103.106802  0.548
2009 Verduijn J, Lansbergen GP, Tettamanzi GC, Rahman R, Biesemans S, Colleart N, Klimeck G, Hollenberg LCL, Rogge S. From Single-atom Spectroscopy to Lifetime Enhanced Triplet Transport in MOSFETs The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2009.K-1-1  0.327
2009 Rahman R, Lansbergen GP, Park SH, Verduijn J, Klimeck G, Rogge S, Hollenberg LCL. Orbital Stark effect and quantum confinement transition of donors in silicon Physical Review B. 80. DOI: 10.1103/Physrevb.80.165314  0.656
2009 Rahman R, Park SH, Boykin TB, Klimeck G, Rogge S, Hollenberg LCL. Gate-inducedg-factor control and dimensional transition for donors in multivalley semiconductors Physical Review B. 80. DOI: 10.1103/Physrevb.80.155301  0.615
2009 Rahman R, Park SH, Cole JH, Greentree AD, Muller RP, Klimeck G, Hollenberg LCL. Atomistic simulations of adiabatic coherent electron transport in triple donor systems Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.035302  0.642
2008 Lansbergen GP, Rahman R, Wellard CJ, Caro J, Woo I, Colleart N, Biesemans S, Klimeck G, Hollenberg L, Rogge S. Level Spectrum of a Single Gated Arsenic Donor in a Three Terminal Geometry Mrs Proceedings. 1117. DOI: 10.1557/Proc-1117-J01-03  0.629
2008 Lansbergen G, Rahman R, Wellard C, Caro J, Collaert N, Biesemans S, Klimeck G, Hollenberg L, Rogge S. Atomistic Understanding of a Single Gated Dopant Atom in a MOSFET Mrs Proceedings. 1067. DOI: 10.1557/Proc-1067-B03-07  0.605
2008 Lansbergen GP, Rahman R, Caro J, Biesemans S, Klimeck G, Hollenberg LCL, Rogge S. Transport spectroscopy of a single atom in a FinFET Journal of Physics: Conference Series. 109: 012003. DOI: 10.1088/1742-6596/109/1/012003  0.44
2008 Lansbergen GP, Rahman R, Wellard CJ, Woo I, Caro J, Collaert N, Biesemans S, Klimeck G, Hollenberg LCL, Rogge S. Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET Nature Physics. 4: 656-661. DOI: 10.1038/Nphys994  0.637
2008 Naumov M, Lee S, Haley B, Bae H, Clark S, Rahman R, Ryu H, Saied F, Klimeck G. Eigenvalue solvers for atomistic simulations of electronic structures with NEMO-3D Journal of Computational Electronics. 7: 297-300. DOI: 10.1007/S10825-008-0223-5  0.642
2007 Rahman R, Wellard CJ, Bradbury FR, Prada M, Cole JH, Klimeck G, Hollenberg LC. High precision quantum control of single donor spins in silicon. Physical Review Letters. 99: 036403. PMID 17678301 DOI: 10.1103/Physrevlett.99.036403  0.636
2007 Klimeck G, Ahmed SS, Bae H, Clark S, Haley B, Lee S, Naumov M, Ryu H, Saied F, Prada M, Korkusinski M, Boykin TB, Rahman R. Atomistic simulation of realistically sized nanodevices using NEMO 3-D - Part I: Models and benchmarks Ieee Transactions On Electron Devices. 54: 2079-2089. DOI: 10.1109/Ted.2007.902879  0.703
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