☰

Thomas J. Rotter, Ph.D. - Publications

Affiliations: 
2007 University of New Mexico, Albuquerque, NM, United States 
Area:
Optics Physics
Tree Info Similar researchers PubMed Report error

25 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Klein B, Gautam N, Plis E, Schuler-Sandy T, Rotter TJ, Krishna S, Connelly BC, Metcalfe GD, Shen P, Wraback M. Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4862085  0.369
2013 Jahan NA, Ahirwar P, Rotter TJ, Balakrishnan G, Kumano H, Suemune I. Spectral and transient luminescence measurements on GaSb/AlGaSb quantum wells grown on GaSb/GaAs heterojunctions with and without interfacial misfit arrays Japanese Journal of Applied Physics. 52. DOI: 10.7567/Jjap.52.022101  0.563
2013 Plis E, Klein B, Myers S, Gautam N, Rotter TJ, Dawson RL, Krishna S, Lee SJ, Kim YH. Type-II InAs/GaSb strained layer superlattices grown on GaSb (111)B substrate Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4798650  0.377
2013 Jahan NA, Hermannstädter C, Sasakura H, Rotter TJ, Ahirwar P, Balakrishnan G, Kumano H, Suemune I. Carrier dynamics and photoluminescence quenching mechanism of strained InGaSb/AlGaSb quantum wells Journal of Applied Physics. 113. DOI: 10.1063/1.4789374  0.482
2013 Jahan NA, Hermannstädter C, Huh JH, Sasakura H, Rotter TJ, Ahirwar P, Balakrishnan G, Akahane K, Sasaki M, Kumano H, Suemune I. Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates Journal of Applied Physics. 113. DOI: 10.1063/1.4775768  0.585
2012 Laurain A, Hader J, Lai YY, Wang TL, Yarborough M, Balakrishnan G, Rotter TJ, Ahirwar P, Moloney JV. Influence of non-radiative carrier losses on pulsed and continuous VECSEL performance Proceedings of Spie - the International Society For Optical Engineering. 8242. DOI: 10.1117/12.909412  0.351
2012 Schuler-Sandy T, Myers S, Klein B, Gautam N, Ahirwar P, Tian ZB, Rotter T, Balakrishnan G, Plis E, Krishna S. Gallium free type II InAs/InAs xSb 1-x superlattice photodetectors Applied Physics Letters. 101. DOI: 10.1063/1.4745926  0.381
2011 Barve AV, Kim JO, Sharma YD, Rotter T, Sengupta S, Montoya J, Krishna S. Characterization of different transitions in quantum dots-in-a-well (DWELL) infrared photodetectors Proceedings of Spie. 8012: 801241. DOI: 10.1117/12.892025  0.529
2011 Wang C, Li C, Hasselbeck MP, Rotter T, Malloy K, Sheik-Bahae M, Olson J. GaAs/GaInP double heterostructure characterization for laser cooling of semiconductors Proceedings of Spie. 7951. DOI: 10.1117/12.878979  0.685
2011 Albrecht AR, Rotter TJ, Hains CP, Stintz A, Xin G, Wang TL, Kaneda Y, Moloney JV, Malloy KJ, Balakrishnan G. High-power 1.25 μm InAs QD VECSEL based on resonant periodic gain structure Proceedings of Spie - the International Society For Optical Engineering. 7919. DOI: 10.1117/12.874321  0.754
2011 Albrecht AR, Hains CP, Rotter TJ, Stintz A, Malloy KJ, Balakrishnan G, Moloney JV. High power 1.25 μm InAs quantum dot vertical external-cavity surface-emitting laser Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3555379  0.76
2011 Barve AV, Sengupta S, Kim JO, Sharma YD, Adhikary S, Rotter TJ, Lee SJ, Kim YH, Krishna S. Confinement enhancing barriers for high performance quantum dots-in-a-well infrared detectors Applied Physics Letters. 99: 191110. DOI: 10.1063/1.3660317  0.599
2011 Hopkins PE, Duda JC, Clark SP, Hains CP, Rotter TJ, Phinney LM, Balakrishnan G. Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces Applied Physics Letters. 98. DOI: 10.1063/1.3581041  0.345
2011 Gautam N, Naydenkov M, Myers S, Barve AV, Plis E, Rotter T, Dawson LR, Krishna S. Three color infrared detector using InAs/GaSb superlattices with unipolar barriers Applied Physics Letters. 98: 121106. DOI: 10.1063/1.3570687  0.323
2011 Barve AV, Montaya J, Sharma Y, Rotter T, Shao J, Jang WY, Meesala S, Lee SJ, Krishna S. High temperature operation of quantum dots-in-a-well infrared photodetectors Infrared Physics and Technology. 54: 215-219. DOI: 10.1016/J.Infrared.2010.12.016  0.527
2010 Plis E, Rodriguez JB, Balakrishnan G, Sharma YD, Kim HS, Rotter T, Krishna S. Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate Semiconductor Science and Technology. 25: 085010. DOI: 10.1088/0268-1242/25/8/085010  0.379
2010 Barve AV, Rotter T, Sharma Y, Lee SJ, Noh SK, Krishna S. Systematic study of different transitions in high operating temperature quantum dots in a well photodetectors Applied Physics Letters. 97: 061105. DOI: 10.1063/1.3475022  0.434
2009 Jallipalli A, Balakrishnan G, Huang Sh, Rotter T, Nunna K, Liang B, Dawson L, Huffaker D. Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations. Nanoscale Research Letters. 4: 1458-62. PMID 20652143 DOI: 10.1007/S11671-009-9420-9  0.373
2008 Shahrjerdi D, Rotter T, Balakrishnan G, Huffaker D, Tutuc E, Banerjee SK. Fabrication of self-aligned enhancement-mode In0.53 Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack Ieee Electron Device Letters. 29: 557-560. DOI: 10.1109/Led.2008.922031  0.326
2008 Zilkie AJ, Meier J, Mojahedi M, Helmy AS, Poole PJ, Barrios P, Poitras D, Rotter TJ, Yang C, Stintz A, Malloy KJ, Smith PWE, Aitchison JS. Time-resolved linewidth enhancement factors in quantum dot and higher-dimensional semiconductor amplifiers operating at 1.55 μm Journal of Lightwave Technology. 26: 1498-1509. DOI: 10.1109/Jlt.2008.923215  0.714
2007 Zilkie AJ, Meier J, Mojahedi M, Poole PJ, Barrios P, Poitras D, Rotter TJ, Stintz A, Malloy KJ, Smith PWE, Stewart Aitchison J, Yang C. Carrier dynamics of quantum-dot, quantum-dash, and quantum-well semiconductor optical amplifiers operating at 1.55 μm Ieee Journal of Quantum Electronics. 43: 982-991. DOI: 10.1109/Jqe.2007.904474  0.738
2006 Xin YC, Li Y, Martinez A, Rotter TJ, Su H, Zhang L, Gray AL, Luong S, Sun K, Zou Z, Zilko J, Varangis PM, Lester LF. Optical gain and absorption of quantum dots measured using an alternative segmented contact method Ieee Journal of Quantum Electronics. 42: 725-732. DOI: 10.1109/Jqe.2006.876709  0.554
2004 Balakrishnan G, Huang S, Rotter TJ, Stintz A, Dawson LR, Malloy KJ, Xu H, Huffaker DL. 2.0 μm wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer Applied Physics Letters. 84: 2058-2060. DOI: 10.1063/1.1669067  0.715
2003 Stintz A, Rotter T, Malloy K. Formation of quantum wires and quantum dots on buffer layers grown on InP substrates Journal of Crystal Growth. 255: 266-272. DOI: 10.1016/S0022-0248(03)01267-3  0.719
2002 Ukhanov AA, Wang RH, Rotter TJ, Stintz A, Lester LF, Eliseev PG, Malloy KJ. Orientation dependence of the optical properties in InAs quantum-dash lasers on InP Applied Physics Letters. 81: 981-983. DOI: 10.1063/1.1498875  0.651
Show low-probability matches.