| Year |
Citation |
Score |
| 2020 |
Portoff A, Venzie A, Stavola M, Fowler WB, Pearton SJ. Determination of dielectric axes and transition moment directions in β-Ga2O3 from the polarization dependence of vibrational spectra Journal of Applied Physics. 127: 55702. DOI: 10.1063/1.5142376 |
0.363 |
|
| 2019 |
Uftring SJ, Stavola M, Williams PM, Watkins GD. Microscopic structure and multiple charge states of a PtH2 complex in Si. Physical Review. B, Condensed Matter. 51: 9612-9621. PMID 9977624 DOI: 10.1103/Physrevb.51.9612 |
0.319 |
|
| 2019 |
Qin Y, Stavola M, Fowler WB, Weiser P, Pearton SJ. Editors' Choice—Hydrogen Centers in β-Ga2O3: Infrared Spectroscopy and Density Functional Theory Ecs Journal of Solid State Science and Technology. 8. DOI: 10.1149/2.0221907Jss |
0.479 |
|
| 2018 |
Weiser P, Stavola M, Fowler WB, Qin Y, Pearton S. Structure and vibrational properties of the dominant O-H center in β-Ga2O3 Applied Physics Letters. 112: 232104. DOI: 10.1063/1.5029921 |
0.544 |
|
| 2018 |
Stavola M, Fowler WB. Tutorial: Novel properties of defects in semiconductors revealed by their vibrational spectra Journal of Applied Physics. 123: 161561. DOI: 10.1063/1.5011036 |
0.389 |
|
| 2018 |
Qin Y, Weiser P, Villalta K, Stavola M, Fowler WB, Biaggio I, Boatner L. Diffusivity of the interstitial hydrogen shallow donor in In2O3 Journal of Applied Physics. 123: 161506. DOI: 10.1063/1.4995593 |
0.355 |
|
| 2016 |
Yin W, Qin Y, Fowler WB, Stavola M, Boatner LA. The structures of interstitial hydrogen centers in VO2 in the dilute limit from their vibrational properties and theory. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 28: 395401. PMID 27465290 DOI: 10.1088/0953-8984/28/39/395401 |
0.464 |
|
| 2016 |
Weiser P, Qin Y, Yin W, Stavola M, Fowler WB, Boatner LA. Symmetry and diffusivity of the interstitial hydrogen shallow-donor center in In2O3 Applied Physics Letters. 109: 202105. DOI: 10.1063/1.4967943 |
0.394 |
|
| 2015 |
Yin W, Smithe K, Weiser P, Stavola M, Fowler WB, Boatner L, Pearton SJ, Hays DC, Koch SG. Hydrogen centers and the conductivity of i n2 O3 single crystals Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.075208 |
0.535 |
|
| 2014 |
Estreicher SK, Gibbons TM, Stavola M. Isotope-dependent phonon trapping at defects in semiconductors Solid State Phenomena. 205: 209-212. DOI: 10.4028/Www.Scientific.Net/Ssp.205-206.209 |
0.462 |
|
| 2014 |
Stavola M, Estreicher SK, Seacrist M. Light-element impurities and their reactions in multicrystalline Si Solid State Phenomena. 205: 201-208. DOI: 10.4028/Www.Scientific.Net/Ssp.205-206.201 |
0.449 |
|
| 2014 |
Stavola M, Bekisli F, Yin W, Smithe K, Beall Fowler W, Boatner LA. Contrasting the experimental properties of hydrogen in SnO2, In2O3, and TiO2 Journal of Applied Physics. 115. DOI: 10.1063/1.4837955 |
0.796 |
|
| 2013 |
Gibbons TM, Estreicher SK, Potter K, Bekisli F, Stavola M. Huge isotope effect on the vibrational lifetimes of an H2*(C) defect in Si Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.115207 |
0.796 |
|
| 2013 |
Zhang H, Stavola M, Seacrist M. Nitrogen-containing point defects in multi-crystalline Si solar-cell materials Journal of Applied Physics. 114: 93707. DOI: 10.1063/1.4820516 |
0.596 |
|
| 2012 |
Bekisli F, Fowler WB, Stavola M. Small polaron characteristics of an OD center in TiO 2 studied by infrared spectroscopy Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.155208 |
0.763 |
|
| 2012 |
Wen L, Stavola M, Fowler WB, Trotta R, Polimeni A, Capizzi M, Bisognin G, Berti M, Rubini S, Martelli F. Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs 1-yN y alloys: Role of N-H n centers with n>2 and their thermal stability Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.085206 |
0.647 |
|
| 2012 |
Bekisli F, Fowler WB, Stavola M, Boatner LA, Spahr E, Lüpke G. Bond angles for O-H defects in SnO 2 from polarization properties of their vibrational modes Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.205202 |
0.785 |
|
| 2012 |
Estreicher SK, Docaj A, Bebek MB, Backlund DJ, Stavola M. Hydrogen in C-rich Si and the diffusion of vacancy-H complexes Physica Status Solidi (a) Applications and Materials Science. 209: 1872-1879. DOI: 10.1002/Pssa.201200054 |
0.467 |
|
| 2011 |
Peng C, Zhang H, Stavola M, Fowler WB, Esham B, Estreicher SK, Docaj A, Carnel L, Seacrist M. Microscopic structure of a VH4 center trapped by C in Si Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.195205 |
0.731 |
|
| 2011 |
Bekisli F, Stavola M, Fowler WB, Boatner L, Spahr E, Lüpke G. Hydrogen impurities and shallow donors in SnO2 studied by infrared spectroscopy Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.035213 |
0.801 |
|
| 2011 |
Peng C, Zhang H, Stavola M, Yelundur V, Rohatgi A, Carnel L, Seacrist M, Kalejs J. Interaction of hydrogen with carbon in multicrystalline Si solar-cell materials Journal of Applied Physics. 109. DOI: 10.1063/1.3561367 |
0.708 |
|
| 2010 |
Herklotz F, Lavrov EV, Kolkovsky V, Weber J, Stavola M. Charge states of a hydrogen defect with a local vibrational mode at 3326 cm-1 in ZnO Physical Review B. 82: 115206. DOI: 10.1103/Physrevb.82.115206 |
0.38 |
|
| 2010 |
Wen L, Bekisli F, Stavola M, Fowler WB, Trotta R, Polimeni A, Capizzi M, Rubini S, Martelli F. Detailed structure of the H-N-H center in GaAsy N1-y revealed by vibrational spectroscopy under uniaxial stress Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.233201 |
0.776 |
|
| 2009 |
Stavola M, Jiang F, Kleekajai S, Wen L, Peng C, Yelundur V, Rohatgi A, Hahn G, Carnel L, Kalejs J. Hydrogen Passivation of Defects in Crystalline Silicon Solar Cells Mrs Proceedings. 1210. DOI: 10.1557/Proc-1210-Q01-01 |
0.696 |
|
| 2009 |
Peng C, Stavola M, Fowler WB, Lockwood M. Ortho-para transition of interstitial H 2 and D 2 in Si Physical Review B. 80: 125207. DOI: 10.1103/Physrevb.80.125207 |
0.574 |
|
| 2009 |
Kleekajai S, Wen L, Peng C, Stavola M, Yelundur V, Nakayashiki K, Rohatgi A, Kalejs J. Infrared study of the concentration of H introduced into Si by the postdeposition annealing of a SiNx coating Journal of Applied Physics. 106. DOI: 10.1063/1.3267317 |
0.579 |
|
| 2008 |
Kleekajai S, Jiang F, Colon K, Stavola M, Fowler WB, Martin KR, Polimeni A, Capizzi M, Hong YG, Xin HP, Tu CW, Bais G, Rubini S, Martelli F. Vibrational properties of the H-N-H complex in dilute III-N-V alloys: Infrared spectroscopy and density functional theory Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.085213 |
0.495 |
|
| 2007 |
Martin KR, Peng C, Kleekajai S, Blaney P, Diamond E, Fowler WB, Stavola M, González R. Hindered rotation of an OH-Li center in MgO: Infrared absorption experiments and theory Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.245211 |
0.574 |
|
| 2007 |
Martin KR, Peng C, Kleekajai S, Blaney P, Diamond E, Beall Fowler W, Stavola M, González R. Hindered rotation of OD-Li in MgO: IR absorption experiments and theory Physica B: Condensed Matter. 401: 421-425. DOI: 10.1016/J.Physb.2007.08.202 |
0.525 |
|
| 2007 |
Kleekajai S, Colon K, Stavola M, Fowler WB, Martin KR, Polimeni A, Capizzi M, Hong YG, Xin HP, Tu CW. Vibrational spectroscopy of hydrogenated GaP1-yNy Physica B: Condensed Matter. 401: 347-350. DOI: 10.1016/J.Physb.2007.08.184 |
0.493 |
|
| 2006 |
Martin KR, Blaney P, Shi G, Stavola M, Fowler WB. Temperature dependence of the vibrational spectrum of a Li-OH complex in ZnO: Infrared absorption experiments and theory Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.235209 |
0.618 |
|
| 2006 |
Shi GA, Stavola M, Fowler WB. Identification of an OH-Li center in ZnO: Infrared absorption spectroscopy and density functional theory Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.081201 |
0.65 |
|
| 2006 |
Kleekajai S, Jiang F, Stavola M, Yelundur V, Nakayashiki K, Rohatgi A, Hahn G, Seren S, Kalejs J. Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells Journal of Applied Physics. 100. DOI: 10.1063/1.2363684 |
0.499 |
|
| 2006 |
Pereira RN, Bech Nielsen B, Stavola M, Sanati M, Estreicher SK, Mizuta M. Local vibrational modes of hydrogen in GaN: Observation and theory Physica B: Condensed Matter. 376: 464-467. DOI: 10.1016/J.Physb.2005.12.119 |
0.472 |
|
| 2005 |
Shi GA, Stavola M, Pearton SJ, Thieme M, Lavrov EV, Weber J. Hydrogen local modes and shallow donors in ZnO Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.195211 |
0.696 |
|
| 2005 |
Shi GA, Stavola M, Fowler WB, Chen EE. Rotational-vibrational transitions of interstitial HD in Si Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.085207 |
0.643 |
|
| 2005 |
Fowler WB, Martin KR, Washer K, Stavola M. Structure and vibrational properties of N-H2 complexes in GaAs:N Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.035208 |
0.456 |
|
| 2004 |
Stavola M, Chen EE, Fowler WB. Deciphering the Vibrational Spectrum of Interstitial H 2 in Si Mrs Proceedings. 813. DOI: 10.1557/Proc-813-H6.1 |
0.603 |
|
| 2004 |
Jiang F, Stavola M, Capizzi M, Polimeni A, Bonapasta AA, Filippone F. Vibrational spectroscopy of hydrogenated GaAs1-yNy: A structure-sensitive test of an H2*(N) model Physical Review B. 69: 413091-413094. DOI: 10.1103/Physrevb.69.041309 |
0.463 |
|
| 2004 |
Shi GA, Saboktakin M, Stavola M, Pearton SJ. "Hidden hydrogen" in as-grown ZnO Applied Physics Letters. 85: 5601-5603. DOI: 10.1063/1.1832736 |
0.674 |
|
| 2003 |
Overberg ME, Baik KH, Thaler GT, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Tang W, Stavola M, Zavada JM. Hydrogenation Effects on Magnetic Properties of GaMnP Electrochemical and Solid-State Letters. 6. DOI: 10.1149/1.1612725 |
0.391 |
|
| 2003 |
Polimeni A, Ciatto G, Ortega L, Jiang F, Boscherini F, Filippone F, Bonapasta AA, Stavola M, Capizzi M. Lattice relaxation by atomic hydrogen irradiation of III-N-V semiconductor alloys Physical Review B. 68: 85204. DOI: 10.1103/Physrevb.68.085204 |
0.421 |
|
| 2003 |
Baik KH, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Tang W, Stavola M, Zavada JM. Effects of hydrogen incorporation in GaMnN Applied Physics Letters. 83: 5458-5460. DOI: 10.1063/1.1637151 |
0.324 |
|
| 2003 |
Jiang F, Stavola M, Rohatgi A, Kim D, Holt J, Atwater H, Kalejs J. Hydrogenation of Si from SiNx(H) films: Characterization of H introduced into the Si Applied Physics Letters. 83: 931-933. DOI: 10.1063/1.1598643 |
0.485 |
|
| 2003 |
Holt J, Goodwin D, Gabor A, Jiang F, Stavola M, Atwater HA. Hot-wire chemical vapor deposition of high hydrogen content silicon nitride for solar cell passivation and anti-reflection coating applications Thin Solid Films. 430: 37-40. DOI: 10.1016/S0040-6090(03)00131-7 |
0.359 |
|
| 2003 |
Pearton SJ, Abernathy CR, Thaler GT, Frazier R, Ren F, Hebard AF, Park YD, Norton DP, Tang W, Stavola M, Zavada JM, Wilson RG. Effects of defects and doping on wide band gap ferromagnetic semiconductors Physica B: Condensed Matter. 340: 39-47. DOI: 10.1016/J.Physb.2003.09.003 |
0.313 |
|
| 2003 |
Stavola M, Chen EE, Fowler WB, Alvin Shi G. Interstitial H2 in Si: Are all problems solved? Physica B: Condensed Matter. 340: 58-66. DOI: 10.1016/J.Physb.2003.09.002 |
0.59 |
|
| 2002 |
Chen EE, Stavola M, Beall Fowler W, Zhou JA. Rotation of molecular hydrogen in Si: unambiguous identification of ortho-H(2) and para-D(2). Physical Review Letters. 88: 245503. PMID 12059312 DOI: 10.1103/Physrevlett.88.245503 |
0.566 |
|
| 2002 |
Chen EE, Stavola M, Fowler WB, Walters P. Key to understanding interstitial H2 in Si. Physical Review Letters. 88: 105507. PMID 11909373 DOI: 10.1103/Physrevlett.88.105507 |
0.545 |
|
| 2002 |
Fowler WB, Walters P, Stavola M. Dynamics of interstitial H 2 in crystalline silicon Physical Review B. 66: 75216. DOI: 10.1103/Physrevb.66.075216 |
0.465 |
|
| 2002 |
Chen EE, Stavola M, Fowler WB. Ortho and para O-H 2 complexes in silicon Physical Review B. 65: 245208. DOI: 10.1103/Physrevb.65.245208 |
0.548 |
|
| 2001 |
Weinstein MG, Stavola M, Stavola KL, Uftring SJ, Weber J, Sachse J-, Lemke H. Pt-H complexes in Si: Complementary studies by vibrational and capacitance spectroscopies Physical Review B. 65: 35206. DOI: 10.1103/Physrevb.65.035206 |
0.442 |
|
| 2001 |
Weinstein MG, Jiang F, Stavola M, Bech Nielsen B, Usui A, Mizuta M. Hydrogen vibrational lines in HVPE GaN Physica B: Condensed Matter. 308: 122-125. DOI: 10.1016/S0921-4526(01)00712-8 |
0.446 |
|
| 1999 |
Zhou JA, Stavola M. Symmetry Of Molecular H2 In Si From A Uniaxial Stress Study Of The 3618.4 Cm-1 Vibrational Line Physical Review Letters. 83: 1351-1354. DOI: 10.1103/Physrevlett.83.1351 |
0.471 |
|
| 1999 |
Evans MJ, Stavola M, Weinstein MG, Uftring SJ. Vibrational spectroscopy of defect complexes containing Au and H in Si Materials Science and Engineering B-Advanced Functional Solid-State Materials. 58: 118-125. DOI: 10.1016/S0921-5107(98)00295-5 |
0.473 |
|
| 1999 |
Zhou JA, Chen E, Stavola M. Microscopic properties of H2 in Si from the dependence of the 3618.4cm−1 line on temperature and stress Physica B-Condensed Matter. 273: 200-203. DOI: 10.1016/S0921-4526(99)00445-7 |
0.561 |
|
| 1999 |
Pearton S, Abernathy C, Wilson R, Zavada J, Song C, Weinstein M, Stavola M, Han J, Shul R. Effects of hydrogen implantation into GaN Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 147: 171-174. DOI: 10.1016/S0168-583X(98)90561-4 |
0.371 |
|
| 1999 |
Stavola M. Chapter 3 Vibrational Spectroscopy of Light Element Impurities in Semiconductors Semiconductors and Semimetals. 51: 153-224. DOI: 10.1016/S0080-8784(08)62976-2 |
0.369 |
|
| 1998 |
Weinstein MG, Stavola M, Song CY, Bozdog C, Przbylinska H, Watkins GD, Pearton SJ, Wilson RG. Spectroscopy of Proton Implanted GaN Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G5.9 |
0.461 |
|
| 1998 |
Pearton SJ, Lee JW, Wilson RG, Zavada JM, Weinstein MG, Song CY, Stavola M. Hydrogen in GaN-Experiments Mrs Proceedings. 513: 229. DOI: 10.1557/Proc-513-229 |
0.383 |
|
| 1998 |
Weinstein MG, Song CY, Stavola M, Pearton SJ, Wilson RG, Shul RJ, Killeen KP, Ludowise MJ. Hydrogen-decorated lattice defects in proton implanted GaN Applied Physics Letters. 72: 1703-1705. DOI: 10.1063/1.121157 |
0.442 |
|
| 1997 |
Zheng JF, Stavola M, Abernathy CR, Pearton SJ. Growth induced alignment of the first neighbor shell of CAs in AlxGa1-xAs Materials Research Society Symposium - Proceedings. 442: 387-398. DOI: 10.1557/Proc-442-387 |
0.37 |
|
| 1996 |
Zheng JF, Stavola M. Correct assignment of the hydrogen vibrations of the donor-hydrogen complexes in Si: A new example of Fermi resonance. Physical Review Letters. 76: 1154-1157. PMID 10061647 DOI: 10.1103/Physrevlett.76.1154 |
0.408 |
|
| 1996 |
Evans MJ, Gornstein MG, Stavola M. Vibrational Spectroscopy Of Gold Hydrogen Complexes In Silicon Mrs Proceedings. 442. DOI: 10.1557/Proc-442-275 |
0.387 |
|
| 1995 |
Stavola M, Zheng J-, Cheng YM, Abernathy CR, Pearton SJ. Novel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen Vibrations Materials Science Forum. 809-816. DOI: 10.4028/Www.Scientific.Net/Msf.196-201.809 |
0.357 |
|
| 1995 |
Stavola M, Uftring S, Evans M, Williams P, Watkins G. Spectroscopy of Transition-Metal-Hydrogen Complexes in Silicon Mrs Proceedings. 378. DOI: 10.1557/Proc-378-341 |
0.433 |
|
| 1995 |
Stavola M, Cheng YM. Reorientation of the B-H complex in Si: Non-arrhenius kinetics and a reverse isotope effect Solid State Communications. 93: 431-434. DOI: 10.1016/0038-1098(94)00812-4 |
0.44 |
|
| 1994 |
Cheng Y, Stavola M, Abernathy CR, Pearton SJ, Hobson WS. Aligned defect complex containing carbon and hydrogen in as-grown GaAs epitaxial layers. Physical Review. B, Condensed Matter. 49: 2469-2476. PMID 10011080 DOI: 10.1103/Physrevb.49.2469 |
0.325 |
|
| 1994 |
Abernathy C, Ren F, Pearton S, Wisk P, Bohling D, Muhr G, Jones A, Stavola M, Kozuch D. The impact of impurity incorporation on heterojunction bipolar transistors grown by metalorganic molecular beam epitaxy Journal of Crystal Growth. 136: 11-17. DOI: 10.1016/0022-0248(94)90377-8 |
0.331 |
|
| 1994 |
Hobson W, Zheng J, Stavola M, Pearton S. Carbon-doped GaAs grown by organometallic vapor phase epitaxy using tris-dimethylaminoarsenic and CCl4 Journal of Crystal Growth. 143: 124-128. DOI: 10.1016/0022-0248(94)90046-9 |
0.372 |
|
| 1993 |
Williams PM, Watkins GD, Uftring S, Stavola M. Structure-sensitive spectroscopy of transition-metal-hydrogen complexes in silicon. Physical Review Letters. 70: 3816-3819. PMID 10053969 DOI: 10.1103/Physrevlett.70.3816 |
0.525 |
|
| 1993 |
Kozuch DM, Stavola M, Spector SJ, Pearton SJ, Lopata J. Symmetry, stress alignment, and reorientation kinetics of the SiAs-H complex in GaAs. Physical Review B. 48: 8751-8756. PMID 10007089 DOI: 10.1103/Physrevb.48.8751 |
0.433 |
|
| 1993 |
Veloarisoa IA, Stavola M, Cheng YM, Uftring S, Watkins GD, Pearton SJ, Abernathy CR, Lopata J. Ground-state energy shift of acceptor-hydrogen complexes in Si and GaAs under uniaxial stress. Physical Review. B, Condensed Matter. 47: 16237-16241. PMID 10006046 DOI: 10.1103/Physrevb.47.16237 |
0.468 |
|
| 1993 |
Stavola M. Vibrational Spectroscopy of Dopant-Hydrogen Complexes in III-V Semiconductors Materials Science Forum. 251-280. DOI: 10.4028/Www.Scientific.Net/Msf.148-149.251 |
0.355 |
|
| 1993 |
Williams PM, Watkins GD, Uftring S, Stavola M. Spectroscopic Identification of a Transition Metal-H Complex in Silicon Materials Science Forum. 891-896. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.891 |
0.356 |
|
| 1993 |
Stavola M, Cheng YM, Davies G. Isotope Shift for the Low Energy (63cm-1) Excitation of the Al-H Complex in Si: Evidence for a Hydrogen Wagging Mode Materials Science Forum. 885-890. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.885 |
0.447 |
|
| 1993 |
Cheng YM, Stavola M, Abernathy CR, Pearton SJ. Oriented Carbon Pair Defects Stabilized by Hydrogen in as-Grown GaAs Epitaxial Layers Mrs Proceedings. 325: 273. DOI: 10.1557/Proc-325-273 |
0.324 |
|
| 1993 |
Kozuch DM, Stavola M, Pearton SJ, Abernathy CR, Hobson WS. Passivation of carbon‐doped GaAs layers by hydrogen introduced by annealing and growth ambients Journal of Applied Physics. 73: 3716-3724. DOI: 10.1063/1.352902 |
0.412 |
|
| 1993 |
Hobson W, Pearton S, Ren F, Cheng Y, Kozuch D, Stavola M, Geva M. Carbon doped GaAs and AlGaAs grown by OMVPE: doping properties, oxygen incorporation, and hydrogen passivation Materials Science and Engineering: B. 20: 266-270. DOI: 10.1016/0921-5107(93)90239-J |
0.301 |
|
| 1992 |
Veloarisoa IA, Kozuch DM, Stavola M, Peale RE, Watkins GD, Pearton SJ, Abernathy CR, Hobson WS. Passivation of Shallow Acceptors in Si and GaAs by Annealing in H2 Materials Science Forum. 111-118. DOI: 10.4028/Www.Scientific.Net/Msf.83-87.111 |
0.469 |
|
| 1992 |
Myers SM, Baskes MI, Birnbaum HK, Corbett JW, Deleo GG, Estreicher SK, Haller EE, Jena P, Johnson NM, Kirchheim R, Pearton SJ, Stavola MJ. Hydrogen interactions with defects in crystalline solids Reviews of Modern Physics. 64: 559-617. DOI: 10.1103/Revmodphys.64.559 |
0.318 |
|
| 1992 |
Hobson WS, Pearton SJ, Kozuch DM, Stavola M. Comparison of gallium and arsenic precursors for GaAs carbon doping by organometallic vapor phase epitaxy using CCl4 Applied Physics Letters. 60: 3259-3261. DOI: 10.1063/1.106712 |
0.337 |
|
| 1992 |
Pearton S, Abernathy C, Hobson W, Ren F, Fullowan T, Lopata J, Chakrabarti U, Stavola M, Kozuch D. Hydrogen incorporation into GaAs, InP and related compounds during epitaxial growth and device processing Materials Science and Engineering: B. 13: 171-175. DOI: 10.1016/0921-5107(92)90160-B |
0.352 |
|
| 1992 |
Pearton S, Stavola M, Corbett JW. Hydrogen in Semiconductors: Crystal growth and device processing Advanced Materials. 4: 332-340. DOI: 10.1002/Adma.19920040503 |
0.328 |
|
| 1991 |
Stavola M, Pearton SJ. Microscopic Properties of Hydrogen Passivated Shallow Impurities in Semiconductors Materials Science Forum. 141-150. DOI: 10.4028/Www.Scientific.Net/Msf.65-66.141 |
0.354 |
|
| 1991 |
Stavola M, Kozuch DM, Abernathy CR, Hobson WS. Hydrogen Passivation of GaAs:C Epitaxial Layers Grown from Metalorganic Sources Mrs Proceedings. 240. DOI: 10.1557/Proc-240-75 |
0.402 |
|
| 1991 |
Veloarisoa IA, Stavola M, Kozuch DM, Peale RE, Watkins GD. Passivation of shallow impurities in Si by annealing in H2 at high temperature Applied Physics Letters. 59: 2121-2123. DOI: 10.1063/1.106099 |
0.43 |
|
| 1991 |
Stavola M, Pearton SJ. Chapter 8 Vibrational Spectroscopy of Hydrogen-Related Defects in Silicon Semiconductors and Semimetals. 34: 139-183. DOI: 10.1016/S0080-8784(08)62863-X |
0.48 |
|
| 1991 |
Stavola M. Structure and reorientation kinetics of hydrogen passivated shallow impurities in silicon from vibrational spectroscopy Physica B-Condensed Matter. 170: 325-334. DOI: 10.1016/0921-4526(91)90144-4 |
0.415 |
|
| 1991 |
Chevallier J, Clerjaud B, Davies E, Dumas J, Johnson N, Newman RC, Stavola M, Viktorovitch P, Zavada J. Workshop on hydrogen effect in InP and related compounds Annales Des TéLéCommunications. 46: 171-180. DOI: 10.1007/Bf03000721 |
0.308 |
|
| 1990 |
Kozuch DM, Stavola M, Pearton SJ, Abernathy CR, Lopata J. Hydrogen in carbon‐doped GaAs grown by metalorganic molecular beam epitaxy Applied Physics Letters. 57: 2561-2563. DOI: 10.1063/1.103817 |
0.378 |
|
| 1989 |
Stavola M, Pearton SJ, Lopata J, Abernathy CR, Bergman K. Structure and dynamics of the Be-H complex in GaAs. Physical Review. B, Condensed Matter. 39: 8051-8054. PMID 9947507 DOI: 10.1103/Physrevb.39.8051 |
0.505 |
|
| 1989 |
Pearton SJ, Stavola M, Corbett JW. Configurations and Properties of Hydrogen in Crystalline Semiconductors Materials Science Forum. 25-38. DOI: 10.4028/Www.Scientific.Net/Msf.38-41.25 |
0.341 |
|
| 1989 |
Bergman K, Stavola M, Pearton SJ, Lopata J, Hayes T, Grimmeiss HG. Off-Axis Motions and Distortions in Acceptor-H Complexes from Uniaxial Stress Studies Materials Science Forum. 1015-1020. DOI: 10.4028/Www.Scientific.Net/Msf.38-41.1015 |
0.337 |
|
| 1989 |
Kozuch DM, Stavola M, Pearton SJ, Abernathy CR, Lopata J. Sn-H Complex in Hydrogen Pass Ivated GaAs Mrs Proceedings. 163. DOI: 10.1557/Proc-163-477 |
0.495 |
|
| 1989 |
Watkins G, Fowler W, Deleo G, Stavola M, Kozuch D, Pearton S, Lopata J. Fermi Resonance Effects on the Vibration Modes of Hydrogen-Passivated Boron in Silicon Mrs Proceedings. 163. DOI: 10.1557/Proc-163-367 |
0.395 |
|
| 1989 |
Krol DM, Stavola M, Schneemeyer LF, Waszczak JV, Sunshine SA. Raman spectroscopy of single crystals of high- Tc, cuprates Journal of the Optical Society of America B: Optical Physics. 6: 448-454. DOI: 10.1364/Josab.6.000448 |
0.325 |
|
| 1989 |
Stavola M. Defect dynamics from uniaxial stress studies Radiation Effects and Defects in Solids. 399-410. DOI: 10.1080/10420158908213014 |
0.347 |
|
| 1989 |
Pearton SJ, Stavola M, Corbett JW. States of hydrogen in crystalline semiconductors Radiation Effects and Defects in Solids. 323-344. DOI: 10.1080/10420158908213006 |
0.4 |
|
| 1989 |
Dautremont‐Smith WC, Lopata J, Pearton SJ, Koszi LA, Stavola M, Swaminathan V. Hydrogen passivation of acceptors inp‐InP Journal of Applied Physics. 66: 1993-1996. DOI: 10.1063/1.344508 |
0.429 |
|
| 1989 |
Zavada JM, Pearton SJ, Wilson RG, Wu CS, Stavola M, Ren F, Lopata J, Dautremont‐Smith WC, Novak SW. Electrical effects of atomic hydrogen incorporation in GaAs‐on‐Si Journal of Applied Physics. 65: 347-353. DOI: 10.1063/1.342547 |
0.369 |
|
| 1988 |
Stavola M, Bergman K, Pearton SJ, Lopata J. Hydrogen motion in defect complexes: Reorientation kinetics of the B-H complex in silicon. Physical Review Letters. 61: 2786-2789. PMID 10039222 DOI: 10.1103/Physrevlett.61.2786 |
0.368 |
|
| 1988 |
Bergman K, Stavola M, Pearton SJ, Hayes T. Structure of acceptor-hydrogen and donor-hydrogen complexes in silicon from uniaxial stress studies Physical Review B. 38: 9643-9648. PMID 9945785 DOI: 10.1103/Physrevb.38.9643 |
0.514 |
|
| 1988 |
Bergman K, Stavola M, Pearton SJ, Lopata J. Donor-hydrogen complexes in passivated silicon. Physical Review B. 37: 2770-2773. PMID 9944849 DOI: 10.1103/Physrevb.37.2770 |
0.484 |
|
| 1988 |
Stavola M, Pearton SJ, Lopata J, Dautremont-Smith WC. Vibrational spectroscopy of acceptor-hydrogen complexes in silicon: Evidence for low-frequency excitations. Physical Review B. 37: 8313-8318. PMID 9944168 DOI: 10.1103/Physrevb.37.8313 |
0.372 |
|
| 1988 |
Pearton SJ, Abernathy CR, Caruso R, Vernon SM, Short KT, Brown JM, Chu SNG, Stavola M, Haven VE. Thickness dependence of material quality in GaAs‐on‐Si grown by metalorganic chemical vapor deposition Journal of Applied Physics. 63: 775-783. DOI: 10.1063/1.341141 |
0.332 |
|
| 1987 |
Krol DM, Stavola M, Weber W, Schneemeyer LF, Waszczak JV, Zahurak SM, Kosinski SG. Raman spectroscopy and normal-mode assignments for Ba2MCu3Ox (M = Gd,Y) single crystals. Physical Review. B, Condensed Matter. 36: 8325-8328. PMID 9942646 DOI: 10.1103/Physrevb.36.8325 |
0.351 |
|
| 1987 |
Davies G, Lightowlers EC, Stavola M, Bergman K, Svensson B. The 3942-cm-1 optical band in irradiated silicon. Physical Review. B, Condensed Matter. 35: 2755-2766. PMID 9941753 DOI: 10.1103/Physrevb.35.2755 |
0.377 |
|
| 1987 |
Krol DM, Stavola M, Schneemeyer LF, Waszczak JV, Weber W. Vibrational Raman Scattering from high TC single Crystals Mrs Proceedings. 99. DOI: 10.1557/Proc-99-781 |
0.363 |
|
| 1987 |
Vernon SM, Pearton SJ, Gibson JM, Caruso R, Abernathy CR, Short KT, Stavola M, Haven VE, Jacobson DC. MO-CVD GaAs Grown by Direct Deposition on Si Mrs Proceedings. 91. DOI: 10.1557/Proc-91-187 |
0.352 |
|
| 1987 |
Bergman K, Stavola M, Pearton SJ, Lopata J. Passivation of N-Type Silicon by Hydrogen Mrs Proceedings. 104. DOI: 10.1557/Proc-104-281 |
0.463 |
|
| 1987 |
Stavola M, Krol DM, Weber W, Sunshine SA, Jayaraman A, Kourouklis GA, Cava RJ, Rietman EA. Cu-O vibrations of Ba2YCu3Ox Physical Review B. 36: 850-853. DOI: 10.1103/Physrevb.36.850 |
0.324 |
|
| 1987 |
Pearton SJ, Wu CS, Stavola M, Ren F, Lopata J, Dautremont‐Smith WC, Vernon SM, Haven VE. Hydrogenation of GaAs on Si: Effects on diode reverse leakage current Applied Physics Letters. 51: 496-498. DOI: 10.1063/1.98378 |
0.425 |
|
| 1987 |
Nabity JC, Stavola M, Lopata J, Dautremont‐Smith WC, Tu CW, Pearton SJ. Passivation of Si donors and DX centers in AlGaAs by hydrogen plasma exposure Applied Physics Letters. 50: 921-923. DOI: 10.1063/1.97980 |
0.37 |
|
| 1987 |
Stavola M, Pearton SJ, Lopata J, Dautremont‐Smith WC. Vibrational characteristics of acceptor‐hydrogen complexes in silicon Applied Physics Letters. 50: 1086-1088. DOI: 10.1063/1.97978 |
0.389 |
|
| 1987 |
Pearton SJ, Vernon SM, Abernathy CR, Short KT, Caruso R, Stavola M, Gibson JM, Haven VE, White AE, Jacobson DC. Characterization of GaAs layers grown directly on Si substrates by metalorganic chemical vapor deposition Journal of Applied Physics. 62: 862-867. DOI: 10.1063/1.339690 |
0.356 |
|
| 1987 |
Oates AS, Stavola M. Infrared spectrum of oxygen in silicon Journal of Applied Physics. 61: 3114-3116. DOI: 10.1063/1.337814 |
0.368 |
|
| 1987 |
Stavola M. The Oxygen Donor In Silicon Physica B-Condensed Matter. 146: 187-200. DOI: 10.1016/0378-4363(87)90061-1 |
0.381 |
|
| 1986 |
Bergman K, Grossmann G, Grimmeiss HG, Stavola M. Observation of spin-triplet states for double donors in silicon. Physical Review Letters. 56: 2827-2830. PMID 10033105 DOI: 10.1103/Physrevlett.56.2827 |
0.315 |
|
| 1986 |
Davies G, Lightowlers EC, Stavola M, Bergman K, Svensson BG. The 3942 cm-1 Optical Band in Irradiated Crystalline Silicon Materials Science Forum. 893-898. DOI: 10.4028/Www.Scientific.Net/Msf.10-12.893 |
0.313 |
|
| 1986 |
Dautremont‐Smith WC, Nabity JC, Swaminathan V, Stavola M, Chevallier J, Tu CW, Pearton SJ. Passivation of deep level defects in molecular beam epitaxial GaAs by hydrogen plasma exposure Applied Physics Letters. 49: 1098-1100. DOI: 10.1063/1.97433 |
0.363 |
|
| 1986 |
Von Neida AR, Pearton SJ, Stavola M, Caruso R. Effect of crystal stoichiometry on activation efficiency in Si implanted, rapid thermal annealed GaAs Applied Physics Letters. 49: 1708-1710. DOI: 10.1063/1.97222 |
0.323 |
|
| 1985 |
Stavola M, Dexter DL, Knox RS. Electron-hole pair excitation in semiconductors via energy transfer from an external sensitizer. Physical Review. B, Condensed Matter. 31: 2277-2289. PMID 9936035 DOI: 10.1103/Physrevb.31.2277 |
0.684 |
|
| 1985 |
Stavola M, Lee KM. The Electronic Structure and Atomic Symmetry of The Oxygen Donor in Silicon Mrs Proceedings. 59. DOI: 10.1557/Proc-59-95 |
0.336 |
|
| 1985 |
Stavola M, Lee KM, Nabity JC, Freeland PE, Kimerling LC. The Effect Of Uniaxial Stress on the Infrared Absorption Bands Due to the Oxygen Donor in Silicon Mrs Proceedings. 46. DOI: 10.1557/Proc-46-257 |
0.347 |
|
| 1985 |
Kimerling LC, Benton JL, Lee KM, Stavola M. Defect Structure and Properties by Junction Spectroscopy Mrs Proceedings. 46. DOI: 10.1557/Proc-46-1 |
0.339 |
|
| 1984 |
Stavola M. Infrared spectrum of interstitial oxygen in silicon Applied Physics Letters. 44: 514-516. DOI: 10.1063/1.94816 |
0.311 |
|
| 1983 |
Stavola M, Patel JR, Kimerling LC, Freeland PE. Diffusivity of oxygen in silicon at the donor formation temperature Applied Physics Letters. 42: 73-75. DOI: 10.1063/1.93731 |
0.328 |
|
| 1983 |
Benton JL, Kimerling LC, Stavola M. The oxygen related donor effect in silicon Physica B-Condensed Matter. 116: 271-275. DOI: 10.1016/0378-4363(83)90258-9 |
0.323 |
|
| 1981 |
Stavola M, Friedman J, Stepnoski R, Sceats MG. Hydrogen bonding between solvation shells around gd3+ from cooperative vibronic spectra Chemical Physics Letters. 80: 192-194. DOI: 10.1016/0009-2614(81)80087-5 |
0.361 |
|
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