Michael J. Stavola - Publications

Affiliations: 
Physics Lehigh University, Bethlehem, PA, United States 
Area:
Condensed Matter Physics
Website:
https://physics.cas.lehigh.edu/content/michael-j-stavola-7

114 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Portoff A, Venzie A, Stavola M, Fowler WB, Pearton SJ. Determination of dielectric axes and transition moment directions in β-Ga2O3 from the polarization dependence of vibrational spectra Journal of Applied Physics. 127: 55702. DOI: 10.1063/1.5142376  0.8
2019 Qin Y, Stavola M, Fowler WB, Weiser P, Pearton SJ. Editors' Choice—Hydrogen Centers in β-Ga2O3: Infrared Spectroscopy and Density Functional Theory Ecs Journal of Solid State Science and Technology. 8. DOI: 10.1149/2.0221907Jss  0.8
2018 Weiser P, Stavola M, Fowler WB, Qin Y, Pearton S. Structure and vibrational properties of the dominant O-H center in β-Ga2O3 Applied Physics Letters. 112: 232104. DOI: 10.1063/1.5029921  0.8
2018 Stavola M, Fowler WB. Tutorial: Novel properties of defects in semiconductors revealed by their vibrational spectra Journal of Applied Physics. 123: 161561. DOI: 10.1063/1.5011036  0.8
2016 Yin W, Qin Y, Fowler WB, Stavola M, Boatner LA. The structures of interstitial hydrogen centers in VO2 in the dilute limit from their vibrational properties and theory. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 28: 395401. PMID 27465290 DOI: 10.1088/0953-8984/28/39/395401  0.8
2016 Weiser P, Qin Y, Yin W, Stavola M, Fowler WB, Boatner LA. Symmetry and diffusivity of the interstitial hydrogen shallow-donor center in In2O3 Applied Physics Letters. 109: 202105. DOI: 10.1063/1.4967943  0.8
2015 Yin W, Smithe K, Weiser P, Stavola M, Fowler WB, Boatner L, Pearton SJ, Hays DC, Koch SG. Hydrogen centers and the conductivity of i n2 O3 single crystals Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.075208  0.8
2014 Estreicher SK, Gibbons TM, Stavola M. Isotope-dependent phonon trapping at defects in semiconductors Solid State Phenomena. 205: 209-212. DOI: 10.4028/Www.Scientific.Net/Ssp.205-206.209  0.8
2014 Stavola M, Estreicher SK, Seacrist M. Light-element impurities and their reactions in multicrystalline Si Solid State Phenomena. 205: 201-208. DOI: 10.4028/Www.Scientific.Net/Ssp.205-206.201  0.8
2014 Stavola M, Bekisli F, Yin W, Smithe K, Beall Fowler W, Boatner LA. Contrasting the experimental properties of hydrogen in SnO2, In2O3, and TiO2 Journal of Applied Physics. 115. DOI: 10.1063/1.4837955  0.8
2013 Gibbons TM, Estreicher SK, Potter K, Bekisli F, Stavola M. Huge isotope effect on the vibrational lifetimes of an H2*(C) defect in Si Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.115207  0.8
2013 Zhang H, Stavola M, Seacrist M. Nitrogen-containing point defects in multi-crystalline Si solar-cell materials Journal of Applied Physics. 114: 93707. DOI: 10.1063/1.4820516  0.8
2012 Bekisli F, Fowler WB, Stavola M. Small polaron characteristics of an OD center in TiO 2 studied by infrared spectroscopy Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.155208  0.8
2012 Wen L, Stavola M, Fowler WB, Trotta R, Polimeni A, Capizzi M, Bisognin G, Berti M, Rubini S, Martelli F. Microscopic origin of compressive strain in hydrogen-irradiated dilute GaAs 1-yN y alloys: Role of N-H n centers with n>2 and their thermal stability Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.085206  0.8
2012 Bekisli F, Fowler WB, Stavola M, Boatner LA, Spahr E, Lüpke G. Bond angles for O-H defects in SnO 2 from polarization properties of their vibrational modes Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.205202  0.8
2012 Estreicher SK, Docaj A, Bebek MB, Backlund DJ, Stavola M. Hydrogen in C-rich Si and the diffusion of vacancy-H complexes Physica Status Solidi (a) Applications and Materials Science. 209: 1872-1879. DOI: 10.1002/Pssa.201200054  0.8
2011 Peng C, Zhang H, Stavola M, Fowler WB, Esham B, Estreicher SK, Docaj A, Carnel L, Seacrist M. Microscopic structure of a VH4 center trapped by C in Si Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.195205  0.8
2011 Bekisli F, Stavola M, Fowler WB, Boatner L, Spahr E, Lüpke G. Hydrogen impurities and shallow donors in SnO2 studied by infrared spectroscopy Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.035213  0.8
2011 Peng C, Zhang H, Stavola M, Yelundur V, Rohatgi A, Carnel L, Seacrist M, Kalejs J. Interaction of hydrogen with carbon in multicrystalline Si solar-cell materials Journal of Applied Physics. 109. DOI: 10.1063/1.3561367  0.8
2010 Herklotz F, Lavrov EV, Kolkovsky V, Weber J, Stavola M. Charge states of a hydrogen defect with a local vibrational mode at 3326 cm-1 in ZnO Physical Review B. 82: 115206. DOI: 10.1103/Physrevb.82.115206  0.8
2010 Wen L, Bekisli F, Stavola M, Fowler WB, Trotta R, Polimeni A, Capizzi M, Rubini S, Martelli F. Detailed structure of the H-N-H center in GaAsy N1-y revealed by vibrational spectroscopy under uniaxial stress Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.233201  0.8
2009 Peng C, Stavola M, Fowler WB, Lockwood M. Ortho-para transition of interstitial H 2 and D 2 in Si Physical Review B. 80: 125207. DOI: 10.1103/Physrevb.80.125207  0.8
2009 Kleekajai S, Wen L, Peng C, Stavola M, Yelundur V, Nakayashiki K, Rohatgi A, Kalejs J. Infrared study of the concentration of H introduced into Si by the postdeposition annealing of a SiNx coating Journal of Applied Physics. 106. DOI: 10.1063/1.3267317  0.8
2008 Kleekajai S, Jiang F, Colon K, Stavola M, Fowler WB, Martin KR, Polimeni A, Capizzi M, Hong YG, Xin HP, Tu CW, Bais G, Rubini S, Martelli F. Vibrational properties of the H-N-H complex in dilute III-N-V alloys: Infrared spectroscopy and density functional theory Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.085213  0.8
2007 Martin KR, Peng C, Kleekajai S, Blaney P, Diamond E, Fowler WB, Stavola M, González R. Hindered rotation of an OH-Li center in MgO: Infrared absorption experiments and theory Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.245211  0.8
2007 Martin KR, Peng C, Kleekajai S, Blaney P, Diamond E, Beall Fowler W, Stavola M, González R. Hindered rotation of OD-Li in MgO: IR absorption experiments and theory Physica B: Condensed Matter. 401: 421-425. DOI: 10.1016/J.Physb.2007.08.202  0.8
2007 Kleekajai S, Colon K, Stavola M, Fowler WB, Martin KR, Polimeni A, Capizzi M, Hong YG, Xin HP, Tu CW. Vibrational spectroscopy of hydrogenated GaP1-yNy Physica B: Condensed Matter. 401: 347-350. DOI: 10.1016/J.Physb.2007.08.184  0.8
2006 Martin KR, Blaney P, Shi G, Stavola M, Fowler WB. Temperature dependence of the vibrational spectrum of a Li-OH complex in ZnO: Infrared absorption experiments and theory Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.235209  0.8
2006 Shi GA, Stavola M, Fowler WB. Identification of an OH-Li center in ZnO: Infrared absorption spectroscopy and density functional theory Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.081201  0.8
2006 Stavola M, Kim Y. Obituary of Raymond Jay Emrich Physics Today. DOI: 10.1063/Pt.4.2307  0.8
2006 Kleekajai S, Jiang F, Stavola M, Yelundur V, Nakayashiki K, Rohatgi A, Hahn G, Seren S, Kalejs J. Concentration and penetration depth of H introduced into crystalline Si by hydrogenation methods used to fabricate solar cells Journal of Applied Physics. 100. DOI: 10.1063/1.2363684  0.8
2006 Pereira RN, Bech Nielsen B, Stavola M, Sanati M, Estreicher SK, Mizuta M. Local vibrational modes of hydrogen in GaN: Observation and theory Physica B: Condensed Matter. 376: 464-467. DOI: 10.1016/J.Physb.2005.12.119  0.8
2005 Shi GA, Stavola M, Pearton SJ, Thieme M, Lavrov EV, Weber J. Hydrogen local modes and shallow donors in ZnO Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.195211  0.8
2005 Shi GA, Stavola M, Fowler WB, Chen EE. Rotational-vibrational transitions of interstitial HD in Si Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.085207  0.8
2005 Fowler WB, Martin KR, Washer K, Stavola M. Structure and vibrational properties of N-H2 complexes in GaAs:N Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.035208  0.8
2004 Stavola M, Chen EE, Fowler WB. Deciphering the Vibrational Spectrum of Interstitial H 2 in Si Mrs Proceedings. 813. DOI: 10.1557/Proc-813-H6.1  0.96
2004 Jiang F, Stavola M, Capizzi M, Polimeni A, Bonapasta AA, Filippone F. Vibrational spectroscopy of hydrogenated GaAs1-yNy: A structure-sensitive test of an H2*(N) model Physical Review B. 69: 413091-413094. DOI: 10.1103/Physrevb.69.041309  0.8
2004 Shi GA, Saboktakin M, Stavola M, Pearton SJ. "Hidden hydrogen" in as-grown ZnO Applied Physics Letters. 85: 5601-5603. DOI: 10.1063/1.1832736  0.8
2003 Overberg ME, Baik KH, Thaler GT, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Tang W, Stavola M, Zavada JM. Hydrogenation Effects on Magnetic Properties of GaMnP Electrochemical and Solid-State Letters. 6. DOI: 10.1149/1.1612725  0.8
2003 Polimeni A, Ciatto G, Ortega L, Jiang F, Boscherini F, Filippone F, Bonapasta AA, Stavola M, Capizzi M. Lattice relaxation by atomic hydrogen irradiation of III-N-V semiconductor alloys Physical Review B. 68: 85204. DOI: 10.1103/Physrevb.68.085204  0.8
2003 Baik KH, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Tang W, Stavola M, Zavada JM. Effects of hydrogen incorporation in GaMnN Applied Physics Letters. 83: 5458-5460. DOI: 10.1063/1.1637151  0.8
2003 Pearton SJ, Abernathy CR, Thaler GT, Frazier R, Ren F, Hebard AF, Park YD, Norton DP, Tang W, Stavola M, Zavada JM, Wilson RG. Effects of defects and doping on wide band gap ferromagnetic semiconductors Physica B: Condensed Matter. 340: 39-47. DOI: 10.1016/J.Physb.2003.09.003  0.8
2003 Stavola M, Chen EE, Fowler WB, Alvin Shi G. Interstitial H2 in Si: Are all problems solved? Physica B: Condensed Matter. 340: 58-66. DOI: 10.1016/J.Physb.2003.09.002  0.8
2002 Chen EE, Stavola M, Beall Fowler W, Zhou JA. Rotation of molecular hydrogen in Si: unambiguous identification of ortho-H(2) and para-D(2). Physical Review Letters. 88: 245503. PMID 12059312 DOI: 10.1103/Physrevlett.88.245503  0.96
2002 Chen EE, Stavola M, Fowler WB, Walters P. Key to understanding interstitial H2 in Si. Physical Review Letters. 88: 105507. PMID 11909373 DOI: 10.1103/Physrevlett.88.105507  0.96
2002 Fowler WB, Walters P, Stavola M. Dynamics of interstitial H 2 in crystalline silicon Physical Review B. 66: 75216. DOI: 10.1103/Physrevb.66.075216  0.8
2002 Chen EE, Stavola M, Fowler WB. Ortho and para O-H 2 complexes in silicon Physical Review B. 65: 245208. DOI: 10.1103/Physrevb.65.245208  0.96
2001 Weinstein MG, Stavola M, Stavola KL, Uftring SJ, Weber J, Sachse J-, Lemke H. Pt-H complexes in Si: Complementary studies by vibrational and capacitance spectroscopies Physical Review B. 65: 35206. DOI: 10.1103/Physrevb.65.035206  0.8
2001 Weinstein MG, Jiang F, Stavola M, Bech Nielsen B, Usui A, Mizuta M. Hydrogen vibrational lines in HVPE GaN Physica B: Condensed Matter. 308: 122-125. DOI: 10.1016/S0921-4526(01)00712-8  0.8
1999 Weinstein MG, Stavola M, Song CY, Bozdog C, Przbylinska H, Watkins GD, Pearton SJ, Wilson RG. Spectroscopy of Proton Implanted GaN Mrs Internet Journal of Nitride Semiconductor Research. 4: 542-547. DOI: 10.1557/S109257830000301X  0.8
1999 Zhou JA, Stavola M. Symmetry Of Molecular H2 In Si From A Uniaxial Stress Study Of The 3618.4 Cm-1 Vibrational Line Physical Review Letters. 83: 1351-1354. DOI: 10.1103/Physrevlett.83.1351  0.96
1999 Evans MJ, Stavola M, Weinstein MG, Uftring SJ. Vibrational spectroscopy of defect complexes containing Au and H in Si Materials Science and Engineering B-Advanced Functional Solid-State Materials. 58: 118-125. DOI: 10.1016/S0921-5107(98)00295-5  0.8
1999 Stavola M. To 40 years of defects in semiconductors: may the problem never be solved! Physica B-Condensed Matter. 273: 1-6. DOI: 10.1016/S0921-4526(99)00725-5  0.8
1999 Zhou JA, Chen E, Stavola M. Microscopic properties of H2 in Si from the dependence of the 3618.4cm−1 line on temperature and stress Physica B-Condensed Matter. 273: 200-203. DOI: 10.1016/S0921-4526(99)00445-7  0.96
1999 Stavola M. Chapter 3 Vibrational Spectroscopy of Light Element Impurities in Semiconductors Semiconductors and Semimetals. 51: 153-224. DOI: 10.1016/S0080-8784(08)62976-2  0.8
1998 Weinstein MG, Stavola M, Song CY, Bozdog C, Przbylinska H, Watkins GD, Pearton SJ, Wilson RG. Spectroscopy of Proton Implanted GaN Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G5.9  0.8
1998 Pearton SJ, Lee JW, Wilson RG, Zavada JM, Weinstein MG, Song CY, Stavola M. Hydrogen in GaN-Experiments Mrs Proceedings. 513: 229. DOI: 10.1557/Proc-513-229  0.8
1998 Weinstein MG, Song CY, Stavola M, Pearton SJ, Wilson RG, Shul RJ, Killeen KP, Ludowise MJ. Hydrogen-decorated lattice defects in proton implanted GaN Applied Physics Letters. 72: 1703-1705. DOI: 10.1063/1.121157  0.8
1997 Zhou JA, Song CY, Zheng J-, Stavola M, Cockeram BV, Pearton SJ. Decay Kinetics of Growth-Induced Alignment of the First Neighbor Shell of CAs in AlxGa1-xAs Materials Science Forum. 1293-1298. DOI: 10.4028/Www.Scientific.Net/Msf.258-263.1293  0.96
1997 Zheng JF, Stavola M, Abernathy CR, Pearton SJ. Growth induced alignment of the first neighbor shell of CAs in AlxGa1-xAs Materials Research Society Symposium - Proceedings. 442: 387-398. DOI: 10.1557/Proc-442-387  0.8
1996 Zheng JF, Stavola M. Correct assignment of the hydrogen vibrations of the donor-hydrogen complexes in Si: A new example of Fermi resonance. Physical Review Letters. 76: 1154-1157. PMID 10061647 DOI: 10.1103/Physrevlett.76.1154  0.36
1996 Evans MJ, Gornstein MG, Stavola M. Vibrational Spectroscopy Of Gold Hydrogen Complexes In Silicon Mrs Proceedings. 442. DOI: 10.1557/Proc-442-275  0.8
1995 Stavola M, Zheng J-, Cheng YM, Abernathy CR, Pearton SJ. Novel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen Vibrations Materials Science Forum. 809-816. DOI: 10.4028/Www.Scientific.Net/Msf.196-201.809  0.8
1995 Stavola M, Cheng YM. Reorientation of the B-H complex in Si: Non-arrhenius kinetics and a reverse isotope effect Solid State Communications. 93: 431-434. DOI: 10.1016/0038-1098(94)00812-4  0.8
1994 Cheng Y, Stavola M, Abernathy CR, Pearton SJ, Hobson WS. Aligned defect complex containing carbon and hydrogen in as-grown GaAs epitaxial layers. Physical Review. B, Condensed Matter. 49: 2469-2476. PMID 10011080 DOI: 10.1103/Physrevb.49.2469  0.44
1993 Kozuch DM, Stavola M, Spector SJ, Pearton SJ, Lopata J. Symmetry, stress alignment, and reorientation kinetics of the SiAs-H complex in GaAs. Physical Review B. 48: 8751-8756. PMID 10007089 DOI: 10.1103/Physrevb.48.8751  0.44
1993 Veloarisoa IA, Stavola M, Cheng YM, Uftring S, Watkins GD, Pearton SJ, Abernathy CR, Lopata J. Ground-state energy shift of acceptor-hydrogen complexes in Si and GaAs under uniaxial stress. Physical Review. B, Condensed Matter. 47: 16237-16241. PMID 10006046 DOI: 10.1103/Physrevb.47.16237  0.44
1993 Stavola M. Vibrational Spectroscopy of Dopant-Hydrogen Complexes in III-V Semiconductors Materials Science Forum. 251-280. DOI: 10.4028/Www.Scientific.Net/Msf.148-149.251  0.8
1993 Williams PM, Watkins GD, Uftring S, Stavola M. Spectroscopic Identification of a Transition Metal-H Complex in Silicon Materials Science Forum. 891-896. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.891  0.8
1993 Stavola M, Cheng YM, Davies G. Isotope Shift for the Low Energy (63cm-1) Excitation of the Al-H Complex in Si: Evidence for a Hydrogen Wagging Mode Materials Science Forum. 885-890. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.885  0.8
1993 Cheng YM, Stavola M, Abernathy CR, Pearton SJ. Oriented Carbon Pair Defects Stabilized by Hydrogen in as-Grown GaAs Epitaxial Layers Mrs Proceedings. 325: 273. DOI: 10.1557/Proc-325-273  0.8
1992 Pearton SJ, Abernathy CR, Hobson WS, Chakrabarti UK, Lopata J, Kozuch DM, Stavola M. Unintentional Hydrogenation of III-V Semiconductors during Device Processing Materials Science Forum. 617-622. DOI: 10.4028/Www.Scientific.Net/Msf.83-87.617  0.8
1992 Veloarisoa IA, Kozuch DM, Stavola M, Peale RE, Watkins GD, Pearton SJ, Abernathy CR, Hobson WS. Passivation of Shallow Acceptors in Si and GaAs by Annealing in H2 Materials Science Forum. 111-118. DOI: 10.4028/Www.Scientific.Net/Msf.83-87.111  0.8
1992 Myers SM, Baskes MI, Birnbaum HK, Corbett JW, Deleo GG, Estreicher SK, Haller EE, Jena P, Johnson NM, Kirchheim R, Pearton SJ, Stavola MJ. Hydrogen interactions with defects in crystalline solids Reviews of Modern Physics. 64: 559-617. DOI: 10.1103/Revmodphys.64.559  0.8
1992 Pearton S, Stavola M, Corbett JW. Hydrogen in Semiconductors: Crystal growth and device processing Advanced Materials. 4: 332-340. DOI: 10.1002/Adma.19920040503  0.8
1991 Stavola M, Pearton SJ. Microscopic Properties of Hydrogen Passivated Shallow Impurities in Semiconductors Materials Science Forum. 141-150. DOI: 10.4028/Www.Scientific.Net/Msf.65-66.141  0.8
1991 Veloarisoa IA, Stavola M, Kozuch DM, Peale RE, Watkins GD. Passivation of shallow impurities in Si by annealing in H2 at high temperature Applied Physics Letters. 59: 2121-2123. DOI: 10.1063/1.106099  0.8
1991 Stavola M, Pearton SJ. Chapter 8 Vibrational Spectroscopy of Hydrogen-Related Defects in Silicon Semiconductors and Semimetals. 34: 139-183. DOI: 10.1016/S0080-8784(08)62863-X  0.8
1991 Stavola M. Structure and reorientation kinetics of hydrogen passivated shallow impurities in silicon from vibrational spectroscopy Physica B-Condensed Matter. 170: 325-334. DOI: 10.1016/0921-4526(91)90144-4  0.8
1991 Chevallier J, Clerjaud B, Davies E, Dumas J, Johnson N, Newman RC, Stavola M, Viktorovitch P, Zavada J. Workshop on hydrogen effect in InP and related compounds Annales Des TéLéCommunications. 46: 171-180. DOI: 10.1007/Bf03000721  0.8
1990 Stavola M, Pearton SJ. Passivation of the DX Center in AlGaAs by Hydrogen Plasma Exposure Solid State Phenomena. 10: 273-282. DOI: 10.4028/Www.Scientific.Net/Ssp.10.273  0.8
1989 Stavola M, Bergman K, Pearton SJ, Lopata J. Stavola et al. reply. Physical Review Letters. 63: 1028-1028. PMID 10041256 DOI: 10.1103/Physrevlett.63.1028  0.44
1989 Bergman K, Grossmann G, Grimmeiss HG, Stavola M, McMurray RE. Applicability of the deformation-potential approximation to deep donors in silicon. Physical Review. B, Condensed Matter. 39: 1104-1119. PMID 9948292 DOI: 10.1103/Physrevb.39.1104  0.32
1989 Stavola M, Pearton SJ, Lopata J, Abernathy CR, Bergman K. Structure and dynamics of the Be-H complex in GaAs. Physical Review. B, Condensed Matter. 39: 8051-8054. PMID 9947507 DOI: 10.1103/Physrevb.39.8051  0.44
1989 Stavola M, Krol DM, Schneemeyer LF, Sunshine SA, Waszczak JV, Kosinski SG. Raman scattering from triple perovskites with the Ba2YCu3Ox structure: Normal mode assignments from substitutions on the Ba site. Physical Review. B, Condensed Matter. 39: 287-292. PMID 9947151 DOI: 10.1103/Physrevb.39.287  0.8
1989 Pearton SJ, Stavola M, Corbett JW. Configurations and Properties of Hydrogen in Crystalline Semiconductors Materials Science Forum. 25-38. DOI: 10.4028/Www.Scientific.Net/Msf.38-41.25  0.8
1989 Bergman K, Stavola M, Pearton SJ, Lopata J, Hayes T, Grimmeiss HG. Off-Axis Motions and Distortions in Acceptor-H Complexes from Uniaxial Stress Studies Materials Science Forum. 1015-1020. DOI: 10.4028/Www.Scientific.Net/Msf.38-41.1015  0.8
1989 Krol DM, Stavola M, Schneemeyer LF, Waszczak JV, Sunshine SA. Raman spectroscopy of single crystals of high- Tc, cuprates Journal of the Optical Society of America B: Optical Physics. 6: 448-454. DOI: 10.1364/Josab.6.000448  0.8
1989 Stavola M. Defect dynamics from uniaxial stress studies Radiation Effects and Defects in Solids. 399-410. DOI: 10.1080/10420158908213014  0.8
1989 Pearton SJ, Stavola M, Corbett JW. States of hydrogen in crystalline semiconductors Radiation Effects and Defects in Solids. 323-344. DOI: 10.1080/10420158908213006  0.8
1988 Stavola M, Bergman K, Pearton SJ, Lopata J. Hydrogen motion in defect complexes: Reorientation kinetics of the B-H complex in silicon. Physical Review Letters. 61: 2786-2789. PMID 10039222 DOI: 10.1103/Physrevlett.61.2786  0.44
1988 Bergman K, Stavola M, Pearton SJ, Hayes T. Structure of acceptor-hydrogen and donor-hydrogen complexes in silicon from uniaxial stress studies Physical Review B. 38: 9643-9648. PMID 9945785 DOI: 10.1103/Physrevb.38.9643  0.44
1988 Bergman K, Stavola M, Pearton SJ, Lopata J. Donor-hydrogen complexes in passivated silicon. Physical Review B. 37: 2770-2773. PMID 9944849 DOI: 10.1103/Physrevb.37.2770  0.44
1988 Bergman K, Grossmann G, Grimmeiss HG, Stavola M, Holm C, Wagner P. Tuning the interaction between spin-singlet and spin-triplet states of double donors with stress. Physical Review. B, Condensed Matter. 37: 10738-10745. PMID 9944527 DOI: 10.1103/Physrevb.37.10738  0.32
1988 Stavola M, Pearton SJ, Lopata J, Dautremont-Smith WC. Vibrational spectroscopy of acceptor-hydrogen complexes in silicon: Evidence for low-frequency excitations. Physical Review B. 37: 8313-8318. PMID 9944168 DOI: 10.1103/Physrevb.37.8313  0.44
1987 Davies G, Lightowlers EC, Stavola M, Bergman K, Svensson B. The 3942-cm-1 optical band in irradiated silicon. Physical Review. B, Condensed Matter. 35: 2755-2766. PMID 9941753 DOI: 10.1103/Physrevb.35.2755  0.32
1987 Stavola M, Krol DM, Weber W, Sunshine SA, Jayaraman A, Kourouklis GA, Cava RJ, Rietman EA. Cu-O vibrations of Ba2YCu3Ox Physical Review B. 36: 850-853. DOI: 10.1103/Physrevb.36.850  0.8
1987 Oates AS, Stavola M. Infrared spectrum of oxygen in silicon Journal of Applied Physics. 61: 3114-3116. DOI: 10.1063/1.337814  0.8
1987 Stavola M. The Oxygen Donor In Silicon Physica B-Condensed Matter. 146: 187-200. DOI: 10.1016/0378-4363(87)90061-1  0.8
1986 Bergman K, Grossmann G, Grimmeiss HG, Stavola M. Observation of spin-triplet states for double donors in silicon. Physical Review Letters. 56: 2827-2830. PMID 10033105 DOI: 10.1103/Physrevlett.56.2827  0.32
1986 Davies G, Lightowlers EC, Stavola M, Bergman K, Svensson BG. The 3942 cm-1 Optical Band in Irradiated Crystalline Silicon Materials Science Forum. 893-898. DOI: 10.4028/Www.Scientific.Net/Msf.10-12.893  0.8
1985 Stavola M, Dexter DL, Knox RS. Electron-hole pair excitation in semiconductors via energy transfer from an external sensitizer. Physical Review. B, Condensed Matter. 31: 2277-2289. PMID 9936035 DOI: 10.1103/Physrevb.31.2277  0.8
1985 Stavola M, Lee KM. The Electronic Structure and Atomic Symmetry of The Oxygen Donor in Silicon Mrs Proceedings. 59. DOI: 10.1557/Proc-59-95  0.8
1985 Stavola M. Persistent Questions About The Oxygen Donor In Silicon Mrs Proceedings. 59: 7. DOI: 10.1557/Proc-59-7  0.8
1985 Stavola M, Lee KM, Nabity JC, Freeland PE, Kimerling LC. The Effect Of Uniaxial Stress on the Infrared Absorption Bands Due to the Oxygen Donor in Silicon Mrs Proceedings. 46. DOI: 10.1557/Proc-46-257  0.8
1985 Kimerling LC, Benton JL, Lee KM, Stavola M. Defect Structure and Properties by Junction Spectroscopy Mrs Proceedings. 46. DOI: 10.1557/Proc-46-1  0.8
1985 Stavola M, Parsey JM, Forrest SR, Kaplan ML, Schmidt PH, Young MSS. Transient capacitance analysis of III-V semiconductors with organic-on-inorganic semiconductor contact barrier diodes Applied Physics Letters. 46: 506-508. DOI: 10.1063/1.95573  0.8
1984 Levinson M, Stavola M, Besomi P, Bonner WA. MFe center: A configurationally bistable defect in InP: Fe Physical Review B. 30: 5817-5821. DOI: 10.1103/Physrevb.30.5817  0.8
1984 Stavola M. Infrared spectrum of interstitial oxygen in silicon Applied Physics Letters. 44: 514-516. DOI: 10.1063/1.94816  0.8
1984 Stavola M. Two-center optical transitions in condensed matter Journal of Luminescence. 45-49. DOI: 10.1016/0022-2313(84)90202-3  0.8
1983 Levinson M, Stavola M, Benton JL, Kimerling LC. Metastable M center in InP: Defect-charge-state-controlled structural relaxation Physical Review B. 28: 5848-5855. DOI: 10.1103/Physrevb.28.5848  0.8
1983 Stavola M, Patel JR, Kimerling LC, Freeland PE. Diffusivity of oxygen in silicon at the donor formation temperature Applied Physics Letters. 42: 73-75. DOI: 10.1063/1.93731  0.8
1983 Benton JL, Kimerling LC, Stavola M. The oxygen related donor effect in silicon Physica B-Condensed Matter. 116: 271-275. DOI: 10.1016/0378-4363(83)90258-9  0.8
1981 Stavola M, Isganitis L, Sceats MG. Cooperative vibronic spectra involving rare earth ions and water molecules in hydrated salts and dilute aqueous solutions Journal of Chemical Physics. 74: 4228-4241. DOI: 10.1063/1.441664  0.8
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