Jonathan D. Poplawsky, Ph.D. - Publications

2012 Physics Lehigh University, Bethlehem, PA, United States 
General Physics

20 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Schmidt JE, Poplawsky JD, Mazumder B, Attila Ö, Fu D, de Winter DA, Meirer F, Bare SR, Weckhuysen BM. Coke Formation in a Zeolite Crystal During the Methanol-to-Hydrocarbons Reaction as Studied with Atom Probe Tomography. Angewandte Chemie (International Ed. in English). PMID 27485276 DOI: 10.1002/anie.201606099  0.48
2016 Poplawsky JD, Guo W, Paudel N, Ng A, More K, Leonard D, Yan Y. Structural and compositional dependence of the CdTexSe1-x alloy layer photoactivity in CdTe-based solar cells. Nature Communications. 7: 12537. PMID 27460872 DOI: 10.1038/ncomms12537  0.48
2016 Guo W, Garfinkel DA, Tucker JD, Haley D, Young GA, Poplawsky JD. An atom probe perspective on phase separation and precipitation in duplex stainless steels. Nanotechnology. 27: 254004. PMID 27181108 DOI: 10.1088/0957-4484/27/25/254004  0.48
2016 Poplawsky JD, Li C, Paudel NR, Guo W, Yan Y, Pennycook SJ. Nanoscale doping profiles within CdTe grain boundaries and at the CdS/CdTe interface revealed by atom probe tomography and STEM EBIC Solar Energy Materials and Solar Cells. 150: 95-101. DOI: 10.1016/j.solmat.2016.02.004  0.48
2016 Guo W, Gan B, Molina-Aldareguia JM, Poplawsky JD, Raabe D. Structure and dynamics of shear bands in amorphous-crystalline nanolaminates Scripta Materialia. 110: 28-32. DOI: 10.1016/j.scriptamat.2015.07.038  0.48
2016 Zhang C, Zhang F, Diao H, Gao MC, Tang Z, Poplawsky JD, Liaw PK. Understanding phase stability of Al-Co-Cr-Fe-Ni high entropy alloys Materials and Design. 109: 425-433. DOI: 10.1016/j.matdes.2016.07.073  0.48
2016 Poplawsky JD, Li C, Paudel NR, Guo W, Yan Y, Pennycook SJ. APT mass spectrometry and SEM data for CdTe solar cells Data in Brief. 7: 779-785. DOI: 10.1016/j.dib.2016.03.042  0.48
2016 Bedekar V, Poplawsky JD, Guo W, Shivpuri R, Scott Hyde R. Atomic migration of carbon in hard turned layers of carburized bearing steel Cirp Annals - Manufacturing Technology. DOI: 10.1016/j.cirp.2016.04.009  0.48
2015 Paudel NR, Poplawsky JD, Moore KL, Yan Y. Current Enhancement of CdTe-Based Solar Cells Ieee Journal of Photovoltaics. DOI: 10.1109/JPHOTOV.2015.2458040  0.48
2015 Garfinkel DA, Poplawsky JD, Guo W, Young GA, Tucker JD. Phase Separation in Lean-Grade Duplex Stainless Steel 2101 Jom. 67: 2216-2222. DOI: 10.1007/s11837-015-1581-7  0.48
2014 Ng A, Poplawsky JD, Li C, Pennycook SJ, Rosenthal SJ. Direct electronic property imaging of a nanocrystal-based photovoltaic device by electron beam-induced current via scanning electron microscopy Journal of Physical Chemistry Letters. 5: 856-860. DOI: 10.1021/jz402752k  0.48
2014 Poplawsky JD, Paudel NR, Li C, Parish CM, Leonard D, Yan Y, Pennycook SJ. Direct Imaging of Cl- and Cu-Induced Short-Circuit Efficiency Changes in CdTe Solar Cells Advanced Energy Materials. 4. DOI: 10.1002/aenm.201400454  0.48
2013 Poplawsky JD, Nishikawa A, Fujiwara Y, Dierolf V. Defect roles in the excitation of Eu ions in Eu:GaN. Optics Express. 21: 30633-41. PMID 24514639 DOI: 10.1364/OE.21.030633  0.48
2013 Lee DG, Wakamatsu R, Koizumi A, Terai Y, Poplawsky JD, Dierolf V, Fujiwara Y. Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy Applied Physics Letters. 102. DOI: 10.1063/1.4800447  0.48
2011 Zhao H, Liu G, Zhang J, Poplawsky JD, Dierolf V, Tansu N. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells. Optics Express. 19: A991-A1007. PMID 21747571  0.48
2011 Zhao H, Zhang J, Liu G, Toma T, Poplawsky JD, Dierolf V, Tansu N. Cathodoluminescence characteristics of linearly shaped staggered InGaN quantum wells light-emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 7939. DOI: 10.1117/12.875002  0.48
2010 Zhao H, Zhang J, Toma T, Liu G, Poplawsky JD, Dierolf V, Tansu N. Cathodoluminescence characteristics of linearly-shaped staggered InGaN quantum wells light-emitting diodes 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 532-533. DOI: 10.1109/PHOTONICS.2010.5698996  0.48
2009 Zhao H, Huang GS, Liu G, Li X, Poplawsky JD, Penn ST, Dierolf V, Tansu N. Characteristics of staggered InGaN quantum wells light-emitting diodes emitting at 480-525 nm Device Research Conference - Conference Digest, Drc. 221-222. DOI: 10.1109/DRC.2009.5354899  0.48
2009 Zhao H, Liu G, Li XH, Huang GS, Poplawsky JD, Penn ST, Dierolf V, Tansu N. Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520-525 nm employing graded growth-temperature profile Applied Physics Letters. 95. DOI: 10.1063/1.3204446  0.48
2009 Zhao HP, Liu GY, Li XH, Arif RA, Huang GS, Poplawsky JD, Tafon Penn S, Dierolf V, Tansu N. Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime Iet Optoelectronics. 3: 283-295. DOI: 10.1049/iet-opt.2009.0050  0.48
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