| Year |
Citation |
Score |
| 2020 |
Hogsed M, Choe K, Miguel N, Wang B, Kouvetakis J. Radiation-induced electron and hole traps in Ge1 − xSnx (x = 0–0.094) Journal of Applied Physics. 127: 065708. DOI: 10.1063/1.5131783 |
0.457 |
|
| 2019 |
Ryu M, Harris TR, Wang B, Yeo YK, Hogsed MR, Lee SJ, Kim JS, Kouvetakis J. Temperature-Dependent Photoluminescence Studies of Ge1−ySny (y = 4.3%–9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point Journal of the Korean Physical Society. 75: 577-585. DOI: 10.3938/Jkps.75.577 |
0.471 |
|
| 2019 |
Cazalas E, Hogsed MR, Vangala S, Snure MR, McClory JW. Gamma-ray radiation effects in graphene-based transistors with h-BN nanometer film substrates Applied Physics Letters. 115: 223504. DOI: 10.1063/1.5127895 |
0.32 |
|
| 2019 |
Wang B, Harris T, Hogsed M, Yeo Y, Ryu M, Kouvetakis J. Comparison study of temperature dependent direct/indirect bandgap emissions of Ge1-x-ySixSny and Ge1-ySny grown on Ge buffered Si Thin Solid Films. 673: 63-71. DOI: 10.1016/J.Tsf.2019.01.022 |
0.468 |
|
| 2006 |
Ahoujja M, Elhamri S, Hogsed M, Yeo YK, Hengehold RL. Traps in Si-doped AlxGa1-xN Grown by Molecular Beam Epitaxy on Sapphire Characterized by Deep Level Transient Spectroscopy Mrs Proceedings. 955. DOI: 10.1557/Proc-0955-I15-30 |
0.382 |
|
| 2005 |
Hogsed MR, Ahoujja M, Ryu MY, Yeo YK, Petrosky JC, Hengehold RL. Electrical and optical properties of 1 MeV-electron irradiated Al xGa 1-xN Materials Research Society Symposium Proceedings. 831: 709-714. DOI: 10.1557/Proc-831-E11.35 |
0.531 |
|
| 2005 |
Ahoujja M, Hogsed M, Yeo YK, Hengehold RL. Donor-like Deep Level Defects in GaN Characterized by Double-correlation Deep Level Transient Spectroscopy Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff24-01 |
0.44 |
|
| 2005 |
Hogsed MR, Yeo YK, Ahoujja M, Ryu MY, Petrosky JC, Hengehold RL. Radiation-induced electron traps in Al 0.14Ga 0.86N by 1 MeV electron radiation Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1977185 |
0.462 |
|
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