Wenzhong Bao, Ph.D. - Publications

Affiliations: 
2012 Physics University of California, Riverside, Riverside, CA, United States 
Area:
Condensed Matter Physics, Nanoscience, Materials Science Engineering

102 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2021 Sheng Y, Zhang L, Li F, Chen X, Xie Z, Nan H, Xu Z, Zhang DW, Chen J, Pu Y, Xiao S, Bao W. A novel contact engineering method for transistors based on two-dimensional materials Journal of Materials Science & Technology. 69: 15-19. DOI: 10.1016/J.Jmst.2020.05.079  0.361
2020 Jing H, Peng R, Ma RM, He J, Zhou Y, Yang Z, Li CY, Liu Y, Guo X, Zhu Y, Wang D, Su J, Sun C, Bao W, Wang M. Flexible Ultrathin Single-Crystalline Perovskite Photodetector. Nano Letters. PMID 32941049 DOI: 10.1021/Acs.Nanolett.0C02468  0.352
2020 Wu B, Wang X, Tang H, Jiang W, Chen Y, Wang Z, Cui Z, Lin T, Shen H, Hu W, Meng X, Bao W, Wang J, Chu J. Multifunctional MoS Transistors with Electrolyte Gel Gating. Small (Weinheim An Der Bergstrasse, Germany). e2000420. PMID 32350995 DOI: 10.1002/Smll.202000420  0.446
2020 Wu J, Chen J, Wang C, Zhou Y, Ba K, Xu H, Bao W, Xu X, Carlsson A, Lazar S, Meingast A, Sun Z, Deng H. Metal-Organic Framework for Transparent Electronics. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 7: 1903003. PMID 32328418 DOI: 10.1002/Advs.201903003  0.436
2020 Yang P, Shan Y, Chen J, Ekoya G, Han J, Qiu ZJ, Sun J, Chen F, Wang H, Bao W, Hu L, Zhang RJ, Liu R, Cong C. Remarkable quality improvement of as-grown monolayer MoS by sulfur vapor pretreatment of SiO/Si substrates. Nanoscale. PMID 31909408 DOI: 10.1039/C9Nr09129G  0.417
2020 Liao F, Wang H, Guo X, Guo Z, Tong L, Riaud A, Sheng Y, Chen L, Sun Q, Zhou P, Zhang DW, Chai Y, Jiang X, Liu Y, Bao W. Charge transport and quantum confinement in MoS2 dual-gated transistors Journal of Semiconductors. 41: 072904. DOI: 10.1088/1674-4926/41/7/072904  0.419
2020 Li F, Ji S, Wu H, Zhou S, Niu W, Wei L, Bao W, Pu Y. The Role of the Height Fluctuation Effect in the Tunable Interfacial Electronic Structure of the Vertically Stacked BP/MoS2 Heterojunction The Journal of Physical Chemistry C. 124: 20256-20261. DOI: 10.1021/Acs.Jpcc.0C06441  0.373
2020 Xia Y, Wei L, Deng J, Zong L, Wang C, Chen X, Liang F, Luo C, Bao W, Xu Z, Zhou J, Pu Y, Wu X. Tuning Electrical and Optical Properties of MoSe 2 Transistors via Elemental Doping Advanced Materials Technologies. 5: 2000307. DOI: 10.1002/Admt.202000307  0.316
2019 Liao F, Deng J, Chen X, Wang Y, Zhang X, Liu J, Zhu H, Chen L, Sun Q, Hu W, Wang J, Zhou J, Zhou P, Zhang DW, Wan J, ... Bao W, et al. A Dual-Gate MoS Photodetector Based on Interface Coupling Effect. Small (Weinheim An Der Bergstrasse, Germany). e1904369. PMID 31769618 DOI: 10.1002/Smll.201904369  0.34
2019 Chen J, Wang Q, Sheng Y, Cao G, Yang P, Shan Y, Liao F, Muhammad Z, Bao W, Hu L, Liu R, Cong C, Qiu ZJ. High-performance WSe2 photodetector based on laser-induced p-n junction. Acs Applied Materials & Interfaces. PMID 31659890 DOI: 10.1021/Acsami.9B13948  0.325
2019 Sun Y, Zhuang P, Jiang W, Xu H, Zhang S, Xuan N, Ba K, Liu H, Wang J, Bao W, Shen J, Sun Z. Phase, Conductivity, and Surface Coordination Environment in Two-Dimensional Electrochemistry. Acs Applied Materials & Interfaces. PMID 31268649 DOI: 10.1021/Acsami.9B03673  0.393
2019 Zhang S, Xu H, Liao F, Sun Y, Ba K, Sun Z, Qiu ZJ, Xu Z, Zhu H, Chen L, Sun QQ, Zhou P, Zhang DW, Bao WZ. Wafer-scale transferred multilayer MoS2 for high performance field effect transistors. Nanotechnology. PMID 30641493 DOI: 10.1088/1361-6528/Aafe24  0.405
2019 Liu B, Sheng Y, Huang S, Guo Z, Ba K, Yan H, Bao W, Sun Z. Layer-by-Layer AB-Stacked Bilayer Graphene Growth Through an Asymmetric Oxygen Gateway Chemistry of Materials. 31: 6105-6109. DOI: 10.1021/Acs.Chemmater.9B01095  0.584
2019 Liao F, Sheng Y, Guo Z, Tang H, Wang Y, Zong L, Chen X, Riaud A, Zhu J, Xie Y, Chen L, Zhu H, Sun Q, Zhou P, Jiang X, ... ... Bao W, et al. MoS2 dual-gate transistors with electrostatically doped contacts Nano Research. 12: 2515-2519. DOI: 10.1007/S12274-019-2478-5  0.393
2019 Tang H, Zhang H, Chen X, Wang Y, Zhang X, Cai P, Bao W. Recent progress in devices and circuits based on wafer-scale transition metal dichalcogenides Science in China Series F: Information Sciences. 62: 220401. DOI: 10.1007/S11432-019-2651-X  0.405
2019 Wu B, Wang X, Tang H, Lin T, Shen H, Hu W, Meng X, Bao W, Wang J, Chu J. A study on ionic gated MoS2 phototransistors Science China Information Sciences. 62. DOI: 10.1007/S11432-019-1472-6  0.399
2018 Xu H, Zhang H, Guo Z, Shan Y, Wu S, Wang J, Hu W, Liu H, Sun Z, Luo C, Wu X, Xu Z, Zhang DW, Bao W, Zhou P. High-Performance Wafer-Scale MoS Transistors toward Practical Application. Small (Weinheim An Der Bergstrasse, Germany). e1803465. PMID 30328296 DOI: 10.1002/Smll.201803465  0.406
2018 Guo Z, Chen Y, Zhang H, Wang J, Hu W, Ding S, Zhang DW, Zhou P, Bao W. Independent Band Modulation in 2D van der Waals Heterostructures via a Novel Device Architecture. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 5: 1800237. PMID 30250784 DOI: 10.1002/Advs.201800237  0.398
2018 Yan X, Zhang DW, Liu C, Bao W, Wang S, Ding S, Zheng G, Zhou P. High Performance Amplifier Element Realization via MoS/GaTe Heterostructures. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 5: 1700830. PMID 29721428 DOI: 10.1002/Advs.201700830  0.352
2018 Hou X, Zhang H, Liu C, Ding S, Bao W, Zhang DW, Zhou P. Charge-Trap Memory Based on Hybrid 0D Quantum Dot-2D WSe Structure. Small (Weinheim An Der Bergstrasse, Germany). e1800319. PMID 29665261 DOI: 10.1002/Smll.201800319  0.321
2018 Zhang H, Chen Y, Ding SJ, Wang J, Bao WZ, Zhang DW, Zhou P. Two-dimensional negative capacitance field-effect transistor with organic ferroelectric. Nanotechnology. PMID 29583135 DOI: 10.1088/1361-6528/Aab9E6  0.411
2018 Wang C, Wu X, Ma Y, Mu G, Li Y, Luo C, Xu H, Zhang Y, Yang J, Tang X, Zhang J, Bao W, Duan C. Metallic few-layered VSe2 nanosheets: high two-dimensional conductivity for flexible in-plane solid-state supercapacitors Journal of Materials Chemistry. 6: 8299-8306. DOI: 10.1039/C8Ta00089A  0.484
2018 Zan W, Zhang Q, Xu H, Liao F, Guo Z, Deng J, Wan J, Zhu H, Chen L, Sun Q, Ding S, Zhou P, Bao W, Zhang DW. Large capacitance and fast polarization response of thin electrolyte dielectrics by spin coating for two-dimensional MoS 2 devices Nano Research. 11: 3739-3745. DOI: 10.1007/S12274-017-1945-0  0.383
2018 Xu H, Zhang H, Liu Y, Zhang S, Sun Y, Guo Z, Sheng Y, Wang X, Luo C, Wu X, Wang J, Hu W, Xu Z, Sun Q, Zhou P, ... ... Bao W, et al. Controlled Doping of Wafer-Scale PtSe2 Films for Device Application Advanced Functional Materials. 29: 1805614. DOI: 10.1002/Adfm.201805614  0.417
2017 Ning H, Zeng Y, Kuang Y, Zheng Z, Zhou P, Yao R, Zhang H, Bao W, Chen G, Fang Z, Peng J. Room-temperature fabrication of high-performance amorphous In-Ga-Zn-O/Al2O3 thin-film transistors on ultra-smooth and clear nanopaper. Acs Applied Materials & Interfaces. PMID 28767216 DOI: 10.1021/Acsami.7B07525  0.386
2017 Li C, Yan X, Song X, Bao WZ, Ding SJ, Zhang DW, Zhou P. WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment. Nanotechnology. PMID 28726689 DOI: 10.1088/1361-6528/Aa810F  0.332
2017 Song X, Guo Z, Zhang Q, Zhou P, Bao W, Zhang DW. Progress of Large-Scale Synthesis and Electronic Device Application of Two-Dimensional Transition Metal Dichalcogenides. Small (Weinheim An Der Bergstrasse, Germany). PMID 28722346 DOI: 10.1002/Smll.201700098  0.403
2017 Yan X, Liu C, Li C, Bao W, Ding S, Zhang DW, Zhou P. Tunable SnSe2 /WSe2 Heterostructure Tunneling Field Effect Transistor. Small (Weinheim An Der Bergstrasse, Germany). PMID 28714240 DOI: 10.1002/Smll.201701478  0.405
2017 Liu C, Yan X, Zhang E, Song X, Sun Q, Ding S, Bao W, Xiu F, Zhou P, Zhang DW. Various and Tunable Transport Properties of WSe2 Transistor Formed by Metal Contacts. Small (Weinheim An Der Bergstrasse, Germany). PMID 28296162 DOI: 10.1002/Smll.201604319  0.389
2017 Xu H, Liao F, Guo Z, Guo X, Zhou P, Bao W, Zhang DW. Recent progress in two-dimensional transition metal dichalcogenides: Material synthesis for microelectronics Chinese Science Bulletin. 62: 4237-4255. DOI: 10.1360/N972017-00851  0.471
2017 Li C, Yan X, Bao W, Ding S, Zhang DW, Zhou P. Low sub-threshold swing realization with contacts of graphene/h-BN/MoS2 heterostructures in MoS2 transistors Applied Physics Letters. 111: 193502. DOI: 10.1063/1.4997226  0.545
2017 Tao J, Fang Z, Zhang Q, Bao W, Zhu M, Yao Y, Wang Y, Dai J, Zhang A, Leng C, Henderson D, Wang Z, Hu L. Super-Clear Nanopaper from Agro-Industrial Waste for Green Electronics Advanced Electronic Materials. 3: 1600539. DOI: 10.1002/Aelm.201600539  0.337
2016 Wan J, Lacey SD, Dai J, Bao W, Fuhrer MS, Hu L. Tuning two-dimensional nanomaterials by intercalation: materials, properties and applications. Chemical Society Reviews. PMID 27704060 DOI: 10.1039/C5Cs00758E  0.406
2016 Chen Y, Egan GC, Wan J, Zhu S, Jacob RJ, Zhou W, Dai J, Wang Y, Danner VA, Yao Y, Fu K, Wang Y, Bao W, Li T, Zachariah MR, et al. Ultra-fast self-assembly and stabilization of reactive nanoparticles in reduced graphene oxide films. Nature Communications. 7: 12332. PMID 27515900 DOI: 10.1038/Ncomms12332  0.476
2016 Zhang Q, Bao W, Gong A, Gong T, Ma D, Wan J, Dai J, Munday JN, He JH, Hu L, Zhang D. A highly sensitive, highly transparent, gel-gated MoS2 phototransistor on biodegradable nanopaper. Nanoscale. PMID 27396391 DOI: 10.1039/C6Nr01534D  0.418
2016 Bao W, Pickel AD, Zhang Q, Chen Y, Yao Y, Wan J, Fu KK, Wang Y, Dai J, Zhu H, Drew D, Fuhrer M, Dames C, Hu L. Nanocarbon Paper: Flexible, High Temperature, Planar Lighting with Large Scale Printable Nanocarbon Paper (Adv. Mater. 23/2016). Advanced Materials (Deerfield Beach, Fla.). 28: 4566. PMID 27281044 DOI: 10.1002/Adma.201670157  0.398
2016 Bao W, Pickel AD, Zhang Q, Chen Y, Yao Y, Wan J, Fu KK, Wang Y, Dai J, Zhu H, Drew D, Fuhrer M, Dames C, Hu L. Flexible, High Temperature, Planar Lighting with Large Scale Printable Nanocarbon Paper. Advanced Materials (Deerfield Beach, Fla.). PMID 27000725 DOI: 10.1002/Adma.201506116  0.393
2016 Wan J, Shen F, Luo W, Zhou L, Dai J, Han X, Bao W, Xu Y, Panagiotopoulos J, Fan X, Urban D, Nie A, Shahbazian-Yassar R, Hu L. In situ transmission electron microscopy observation of sodiation-desodiation in a long cycle, high-capacity reduced graphene oxide sodium-ion battery anode Chemistry of Materials. 28: 6528-6535. DOI: 10.1021/Acs.Chemmater.6B01959  0.468
2015 Luo W, Wan J, Ozdemir B, Bao W, Chen Y, Dai J, Lin H, Xu Y, Gu F, Barone V, Hu L. Potassium Ion Batteries with Graphitic Materials. Nano Letters. PMID 26509225 DOI: 10.1021/Acs.Nanolett.5B03667  0.334
2015 Wang Y, Xiao S, Cai X, Bao W, Reutt-Robey J, Fuhrer MS. Electronic transport properties of Ir-decorated graphene. Scientific Reports. 5: 15764. PMID 26508279 DOI: 10.1038/Srep15764  0.595
2015 Xu K, Wang K, Zhao W, Bao W, Liu E, Ren Y, Wang M, Fu Y, Zeng J, Li Z, Zhou W, Song F, Wang X, Shi Y, Wan X, et al. The positive piezoconductive effect in graphene. Nature Communications. 6: 8119. PMID 26360786 DOI: 10.1038/Ncomms9119  0.738
2015 Fei Z, Iwinski EG, Ni G, Zhang LM, Bao W, Rodin AS, Lee Y, Wagner M, Liu M, Dai S, Goldflam M, Thiemens M, Keilmann F, Lau CN, Castro Neto AH, et al. Tunneling Plasmonics in Bilayer Graphene. Nano Letters. PMID 26222509 DOI: 10.1021/Acs.Nanolett.5B00912  0.786
2015 Wan J, Gu F, Bao W, Dai J, Shen F, Luo W, Han X, Urban D, Hu L. Sodium-Ion Intercalated Transparent Conductors with Printed Reduced Graphene Oxide Networks. Nano Letters. 15: 3763-9. PMID 25932654 DOI: 10.1021/Acs.Nanolett.5B00300  0.445
2015 Lacey SD, Wan J, von Wald Cresce A, Russell SM, Dai J, Bao W, Xu K, Hu L. Atomic force microscopy studies on molybdenum disulfide flakes as sodium-ion anodes. Nano Letters. 15: 1018-24. PMID 25549278 DOI: 10.1021/Nl503871S  0.308
2015 Wagner M, Fei Z, McLeod AS, Maddox SJ, Rodin AS, Bao W, Iwinski EG, Zhao Z, Goldflam M, Liu M, Dominguez G, Thiemens M, Fogler MM, Castro-Neto AH, Lau CN, et al. Infrared Pump-Probe Spectroscopy of Plasmons in Graphene and Semiconductors Microscopy and Microanalysis. 21: 1415-1416. DOI: 10.1017/S1431927615007850  0.581
2015 Kang CF, Kuo WC, Bao W, Ho CH, Huang CW, Wu WW, Chu YH, Juang JY, Tseng SH, Hu L, He JH. Self-formed conductive nanofilaments in (Bi, Mn)Ox for ultralow-power memory devices Nano Energy. 13: 283-290. DOI: 10.1016/J.Nanoen.2015.02.033  0.309
2015 Wan J, Bao W, Liu Y, Dai J, Shen F, Zhou L, Cai X, Urban D, Li Y, Jungjohann K, Fuhrer MS, Hu L. In situ investigations of Li-MoS2 with planar batteries Advanced Energy Materials. 5. DOI: 10.1002/Aenm.201401742  0.316
2014 Bao W, Fang Z, Wan J, Dai J, Zhu H, Han X, Yang X, Preston C, Hu L. Aqueous gating of van der Waals materials on bilayer nanopaper. Acs Nano. 8: 10606-12. PMID 25283598 DOI: 10.1021/Nn504125B  0.446
2014 Bao W, Wan J, Han X, Cai X, Zhu H, Kim D, Ma D, Xu Y, Munday JN, Drew HD, Fuhrer MS, Hu L. Approaching the limits of transparency and conductivity in graphitic materials through lithium intercalation. Nature Communications. 5: 4224. PMID 24981857 DOI: 10.1038/Ncomms5224  0.463
2014 Wagner M, Fei Z, McLeod AS, Rodin AS, Bao W, Iwinski EG, Zhao Z, Goldflam M, Liu M, Dominguez G, Thiemens M, Fogler MM, Castro Neto AH, Lau CN, Amarie S, et al. Ultrafast and nanoscale plasmonic phenomena in exfoliated graphene revealed by infrared pump-probe nanoscopy. Nano Letters. 14: 894-900. PMID 24479682 DOI: 10.1021/Nl4042577  0.686
2014 Fang Z, Zhu H, Bao W, Preston C, Liu Z, Dai J, Li Y, Hu L. Highly transparent paper with tunable haze for green electronics Energy and Environmental Science. 7: 3313-3319. DOI: 10.1039/C4Ee02236J  0.35
2014 Zhang H, Huang JW, Velasco J, Myhro K, Maldonado M, Tran DD, Zhao Z, Wang F, Lee Y, Liu G, Bao W, Lau CN. Transport in suspended monolayer and bilayer graphene under strain: A new platform for material studies Carbon. 69: 336-341. DOI: 10.1016/J.Carbon.2013.12.033  0.48
2013 Lee Y, Velasco J, Tran D, Zhang F, Bao W, Jing L, Myhro K, Smirnov D, Lau CN. Broken symmetry quantum Hall states in dual-gated ABA trilayer graphene. Nano Letters. 13: 1627-31. PMID 23527578 DOI: 10.1021/Nl4000757  0.767
2013 Lee Y, Myhro K, Tran D, Gilgren N, Velasco J, Bao W, Deo M, Lau CN. Band gap and correlated phenomena in bilayer and trilayer graphene Proceedings of Spie. 8725: 872506. DOI: 10.1117/12.2016521  0.626
2013 Ojeda-Aristizabal C, Bao W, Fuhrer MS. Thin-film barristor: A gate-tunable vertical graphene-pentacene device Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.035435  0.568
2013 Wang Y, Bao W, Xiao S, Fuhrer MS, Reutt-Robey J. Electrical detection of CF3Cl phase transitions on graphene Applied Physics Letters. 103. DOI: 10.1063/1.4828565  0.449
2013 Bao W, Cai X, Kim D, Sridhara K, Fuhrer MS. High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects Applied Physics Letters. 102. DOI: 10.1063/1.4789365  0.384
2012 Bao W, Myhro K, Zhao Z, Chen Z, Jang W, Jing L, Miao F, Zhang H, Dames C, Lau CN. In situ observation of electrostatic and thermal manipulation of suspended graphene membranes. Nano Letters. 12: 5470-4. PMID 23043470 DOI: 10.1021/Nl301836Q  0.815
2012 Fei Z, Rodin AS, Andreev GO, Bao W, McLeod AS, Wagner M, Zhang LM, Zhao Z, Thiemens M, Dominguez G, Fogler MM, Castro Neto AH, Lau CN, Keilmann F, Basov DN. Gate-tuning of graphene plasmons revealed by infrared nano-imaging. Nature. 487: 82-5. PMID 22722866 DOI: 10.1038/Nature11253  0.772
2012 Bao W, Velasco J, Zhang F, Jing L, Standley B, Smirnov D, Bockrath M, MacDonald AH, Lau CN. Evidence for a spontaneous gapped state in ultraclean bilayer graphene. Proceedings of the National Academy of Sciences of the United States of America. 109: 10802-5. PMID 22685212 DOI: 10.1073/Pnas.1205978109  0.719
2012 Zhang H, Bao W, Zhao Z, Huang JW, Standley B, Liu G, Wang F, Kratz P, Jing L, Bockrath M, Lau CN. Visualizing electrical breakdown and ON/OFF states in electrically switchable suspended graphene break junctions. Nano Letters. 12: 1772-5. PMID 22429115 DOI: 10.1021/Nl203160X  0.756
2012 Velasco J, Jing L, Bao W, Lee Y, Kratz P, Aji V, Bockrath M, Lau CN, Varma C, Stillwell R, Smirnov D, Zhang F, Jung J, MacDonald AH. Transport spectroscopy of symmetry-broken insulating states in bilayer graphene. Nature Nanotechnology. 7: 156-60. PMID 22266634 DOI: 10.1038/Nnano.2011.251  0.739
2012 Kalugin NG, Jing L, Bao W, Wickey L, Del Barga C, Ovezmyradov M, Shaner EA, Lau CN. Graphene-based quantum hall effect infrared photodetectors Proceedings of Spie - the International Society For Optical Engineering. 8268. DOI: 10.1117/12.921485  0.607
2012 Chen CC, Bao W, Chang CC, Zhao Z, Lau CN, Cronin SB. Raman spectroscopy of substrate-induced compression and substrate doping in thermally cycled graphene Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.035431  0.552
2012 Lau CN, Bao W, Velasco J. Properties of suspended graphene membranes Materials Today. 15: 238-245. DOI: 10.1016/S1369-7021(12)70114-1  0.576
2012 Velasco J, Lee Y, Jing L, Liu G, Bao W, Lau CN. Quantum transport in double-gated graphene devices Solid State Communications. 152: 1301-1305. DOI: 10.1016/J.Ssc.2012.04.024  0.639
2011 Fei Z, Andreev GO, Bao W, Zhang LM, S McLeod A, Wang C, Stewart MK, Zhao Z, Dominguez G, Thiemens M, Fogler MM, Tauber MJ, Castro-Neto AH, Lau CN, Keilmann F, et al. Infrared nanoscopy of dirac plasmons at the graphene-SiO₂ interface. Nano Letters. 11: 4701-5. PMID 21972938 DOI: 10.1021/Nl202362D  0.757
2011 Zhang H, Bekyarova E, Huang JW, Zhao Z, Bao W, Wang F, Haddon RC, Lau CN. Aryl functionalization as a route to band gap engineering in single layer graphene devices. Nano Letters. 11: 4047-51. PMID 21875083 DOI: 10.1021/Nl200803Q  0.776
2011 Vandeparre H, Piñeirua M, Brau F, Roman B, Bico J, Gay C, Bao W, Lau CN, Reis PM, Damman P. Wrinkling hierarchy in constrained thin sheets from suspended graphene to curtains. Physical Review Letters. 106: 224301. PMID 21702603 DOI: 10.1103/Physrevlett.106.224301  0.716
2011 Velasco J, Zhao Z, Zhang H, Wang F, Wang Z, Kratz P, Jing L, Bao W, Shi J, Lau CN. Suspension and measurement of graphene and Bi2Se3 thin crystals. Nanotechnology. 22: 285305. PMID 21636884 DOI: 10.1088/0957-4484/22/28/285305  0.698
2011 Deshpande A, Bao W, Zhao Z, Lau CN, Leroy B. Spatial mapping of the Dirac point in monolayer and bilayer graphene Ieee Transactions On Nanotechnology. 10: 88-91. DOI: 10.1109/Tnano.2010.2057256  0.588
2011 Deshpande A, Bao W, Zhao Z, Lau CN, Leroy BJ. Imaging charge density fluctuations in graphene using Coulomb blockade spectroscopy Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.155409  0.519
2011 Kalugin NG, Jing L, Bao W, Wickey L, Del Barga C, Ovezmyradov M, Shaner EA, Lau CN. Graphene-based quantum Hall effect infrared photodetector operating at liquid Nitrogen temperatures Applied Physics Letters. 99. DOI: 10.1063/1.3609320  0.525
2011 Bao W, Jing L, Velasco J, Lee Y, Liu G, Tran D, Standley B, Aykol M, Cronin SB, Smirnov D, Koshino M, McCann E, Bockrath M, Lau CN. Stacking-dependent band gap and quantum transport in trilayer graphene Nature Physics. DOI: 10.1038/Nphys2103  0.595
2010 Bao W, Zhao Z, Zhang H, Liu G, Kratz P, Jing L, Velasco J, Smirnov D, Lau CN. Magnetoconductance oscillations and evidence for fractional quantum Hall states in suspended bilayer and trilayer graphene. Physical Review Letters. 105: 246601. PMID 21231541 DOI: 10.1103/Physrevlett.105.246601  0.726
2010 Jing L, Velasco J, Kratz P, Liu G, Bao W, Bockrath M, Lau CN. Quantum transport and field-induced insulating states in bilayer graphene pnp junctions. Nano Letters. 10: 4000-4. PMID 20863070 DOI: 10.1021/Nl101901G  0.739
2010 Jang W, Chen Z, Bao W, Lau CN, Dames C. Thickness-dependent thermal conductivity of encased graphene and ultrathin graphite. Nano Letters. 10: 3909-13. PMID 20836537 DOI: 10.1021/Nl101613U  0.748
2010 Ghosh S, Bao W, Nika DL, Subrina S, Pokatilov EP, Lau CN, Balandin AA. Dimensional crossover of thermal transport in few-layer graphene. Nature Materials. 9: 555-8. PMID 20453845 DOI: 10.1038/Nmat2753  0.757
2010 Velasco J, Liu G, Jing L, Kratz P, Zhang H, Bao W, Bockrath M, Lau CN. Probing charging and localization in the quantum Hall regime by graphenep–n–pjunctions Physical Review B. 81. DOI: 10.1103/Physrevb.81.121407  0.552
2010 McCreary KM, Pi K, Swartz AG, Han W, Bao W, Lau CN, Guinea F, Katsnelson MI, Kawakami RK. Effect of cluster formation on graphene mobility Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.115453  0.423
2009 Chen CC, Bao W, Theiss J, Dames C, Lau CN, Cronin SB. Raman spectroscopy of ripple formation in suspended graphene. Nano Letters. 9: 4172-6. PMID 19807131 DOI: 10.1021/Nl9023935  0.752
2009 Bao W, Miao F, Chen Z, Zhang H, Jang W, Dames C, Lau CN. Controlled ripple texturing of suspended graphene and ultrathin graphite membranes. Nature Nanotechnology. 4: 562-6. PMID 19734927 DOI: 10.1038/Nnano.2009.191  0.818
2009 Wei P, Bao W, Pu Y, Lau CN, Shi J. Anomalous thermoelectric transport of Dirac particles in graphene. Physical Review Letters. 102: 166808. PMID 19518743 DOI: 10.1103/Physrevlett.102.166808  0.73
2009 Han W, Wang WH, Pi K, McCreary KM, Bao W, Li Y, Miao F, Lau CN, Kawakami RK. Electron-hole asymmetry of spin injection and transport in single-layer graphene. Physical Review Letters. 102: 137205. PMID 19392401 DOI: 10.1103/Physrevlett.102.137205  0.764
2009 Han W, Pi K, Wang WH, McCreary KM, Li Y, Bao W, Wei P, Shi J, Lau CN, Kawakami RK. Spin transport in graphite and graphene spin valves Proceedings of Spie - the International Society For Optical Engineering. 7398. DOI: 10.1117/12.826705  0.474
2009 Pi K, McCreary KM, Bao W, Han W, Chiang YF, Li Y, Tsai SW, Lau CN, Kawakami RK. Electronic doping and scattering by transition metals on graphene Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.075406  0.494
2009 Deshpande A, Bao W, Miao F, Lau CN, Leroy BJ. Spatially resolved spectroscopy of monolayer graphene on SiO2 Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.205411  0.729
2009 Velasco J, Liu G, Bao W, Ning Lau C. Electrical transport in high-quality graphenepnpjunctions New Journal of Physics. 11: 095008. DOI: 10.1088/1367-2630/11/9/095008  0.553
2009 Deshpande A, Bao W, Zhao Z, Lau CN, Leroy BJ. Mapping the Dirac point in gated bilayer graphene Applied Physics Letters. 95. DOI: 10.1063/1.3275755  0.495
2009 Chen Z, Jang W, Bao W, Lau CN, Dames C. Thermal contact resistance between graphene and silicon dioxide Applied Physics Letters. 95. DOI: 10.1063/1.3245315  0.55
2009 Han W, Pi K, Bao W, McCreary KM, Li Y, Wang WH, Lau CN, Kawakami RK. Electrical detection of spin precession in single layer graphene spin valves with transparent contacts Applied Physics Letters. 94. DOI: 10.1063/1.3147203  0.304
2009 Calizo I, Ghosh S, Bao W, Miao F, Ning Lau C, Balandin AA. Raman nanometrology of graphene: Temperature and substrate effects Solid State Communications. 149: 1132-1135. DOI: 10.1016/J.Ssc.2009.01.036  0.748
2009 Miao F, Bao W, Zhang H, Lau CN. Premature switching in graphene Josephson transistors Solid State Communications. 149: 1046-1049. DOI: 10.1016/J.Ssc.2009.01.035  0.687
2008 Standley B, Bao W, Zhang H, Bruck J, Lau CN, Bockrath M. Graphene-based atomic-scale switches. Nano Letters. 8: 3345-9. PMID 18729415 DOI: 10.1021/Nl801774A  0.75
2008 Balandin AA, Ghosh S, Bao W, Calizo I, Teweldebrhan D, Miao F, Lau CN. Superior thermal conductivity of single-layer graphene. Nano Letters. 8: 902-7. PMID 18284217 DOI: 10.1021/Nl0731872  0.803
2008 Wang WH, Han W, Pi K, McCreary KM, Miao F, Bao W, Lau CN, Kawakami RK. Growth of atomically smooth MgO films on graphene by molecular beam epitaxy Applied Physics Letters. 93. DOI: 10.1063/1.3013820  0.673
2008 Liu G, Velasco J, Bao W, Lau CN. Fabrication of graphene p-n-p junctions with contactless top gates Applied Physics Letters. 92: 203103. DOI: 10.1063/1.2928234  0.549
2008 Ghosh S, Calizo I, Teweldebrhan D, Pokatilov EP, Nika DL, Balandin AA, Bao W, Miao F, Lau CN. Extremely high thermal conductivity of graphene: Prospects for thermal management applications in nanoelectronic circuits Applied Physics Letters. 92. DOI: 10.1063/1.2907977  0.706
2007 Miao F, Wijeratne S, Zhang Y, Coskun UC, Bao W, Lau CN. Phase-coherent transport in graphene quantum billiards. Science (New York, N.Y.). 317: 1530-3. PMID 17872440 DOI: 10.1126/Science.1144359  0.799
2007 Calizo I, Balandin AA, Bao W, Miao F, Lau CN. Temperature dependence of the Raman spectra of graphene and graphene multilayers. Nano Letters. 7: 2645-9. PMID 17718584 DOI: 10.1021/Nl071033G  0.794
2007 Calizo I, Bao W, Miao F, Lau CN, Balandin AA. The effect of substrates on the Raman spectrum of graphene: Graphene- on-sapphire and graphene-on-glass Applied Physics Letters. 91: 201904. DOI: 10.1063/1.2805024  0.746
2007 Calizo I, Miao F, Bao W, Lau CN, Balandin AA. Variable temperature Raman microscopy as a nanometrology tool for graphene layers and graphene-based devices Applied Physics Letters. 91: 71913. DOI: 10.1063/1.2771379  0.714
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