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Jinseong Heo, Ph.D. - Publications

Affiliations: 
2008 Applied Physics California Institute of Technology, Pasadena, CA 
Area:
Condensed Matter Physics
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27 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Lee I, Kang WT, Shin YS, Kim YR, Won UY, Kim K, Duong DL, Lee K, Heo J, Lee YH, Yu WJ. Ultrahigh Gauge Factor in Graphene/MoS Heterojunction Field Effect Transistor with Variable Schottky Barrier. Acs Nano. PMID 31241306 DOI: 10.1021/Acsnano.9B03993  0.431
2018 Kang WT, Lee IM, Yun SJ, Song YI, Kim K, Kim DH, Shin YS, Lee K, Heo J, Kim YM, Lee YH, Yu WJ. Direct growth of doping controlled monolayer WSe by selenium-phosphorus substitution. Nanoscale. PMID 29877543 DOI: 10.1039/C8Nr03427C  0.355
2018 Shin YS, Lee K, Kim YR, Lee H, Lee IM, Kang WT, Lee BH, Kim K, Heo J, Park S, Lee YH, Yu WJ. Mobility Engineering in Vertical Field Effect Transistors Based on Van der Waals Heterostructures. Advanced Materials (Deerfield Beach, Fla.). PMID 29333683 DOI: 10.1002/Adma.201704435  0.395
2017 Kwon H, Lee K, Heo J, Oh Y, Lee H, Appalakondaiah S, Ko W, Kim HW, Jung JW, Suh H, Min H, Jeon I, Hwang E, Hwang S. Characterization of Edge Contact: Atomically Resolved Semiconductor-Metal Lateral Boundary in MoS2. Advanced Materials (Deerfield Beach, Fla.). PMID 28922484 DOI: 10.1002/Adma.201702931  0.361
2016 Vu QA, Lee JH, Nguyen VL, Shin YS, Lim SC, Lee K, Heo J, Park S, Kim K, Lee YH, Yu WJ. Tuning carrier tunneling in van der Waals heterostructures for ultrahigh detectivity. Nano Letters. PMID 27983857 DOI: 10.1021/Acs.Nanolett.6B04449  0.435
2016 Heo J, Jeong H, Cho Y, Lee J, Lee K, Nam S, Lee EK, Lee S, Lee H, Hwang S, Park S. Reconfigurable van der Waals Heterostructured Devices with Metal-Insulator Transition. Nano Letters. PMID 27704847 DOI: 10.1021/Acs.Nanolett.6B02199  0.42
2016 Vu QA, Shin YS, Kim YR, Nguyen VL, Kang WT, Kim H, Luong DH, Lee IM, Lee K, Ko DS, Heo J, Park S, Lee YH, Yu WJ. Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio. Nature Communications. 7: 12725. PMID 27586841 DOI: 10.1038/Ncomms12725  0.366
2016 Jeong SJ, Gu Y, Heo J, Yang J, Lee CS, Lee MH, Lee Y, Kim H, Park S, Hwang S. Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors. Scientific Reports. 6: 20907. PMID 26861833 DOI: 10.1038/Srep20907  0.418
2016 Lee J, Lee SC, Kim Y, Heo J, Lee K, Lee D, Kim J, Lee S, Lee CS, Nam MS, Jun SC. Tension assisted metal transfer of graphene for Schottky diodes onto wafer scale substrates. Nanotechnology. 27: 075303. PMID 26789103 DOI: 10.1088/0957-4484/27/7/075303  0.449
2015 Jeong H, Heo J, Kyoung J, Baik CW, Park S, Hwang SW, Lee CW. Dual mode photocurrent generation of graphene-oxide semiconductor junction Ecs Journal of Solid State Science and Technology. 4: N131-N136. DOI: 10.1149/2.0071512Jss  0.447
2015 Kyoung J, Byun KE, Byun SJ, Jeong H, Lee J, Heo J, Song HJ, Park S, Hwang SW. In situ measurement of graphene Fermi level by interband spectroscopy Journal of Applied Physics. 117. DOI: 10.1063/1.4922498  0.366
2013 Heo J, Byun KE, Lee J, Chung HJ, Jeon S, Park S, Hwang S. Graphene and thin-film semiconductor heterojunction transistors integrated on wafer scale for low-power electronics. Nano Letters. 13: 5967-71. PMID 24256403 DOI: 10.1021/Nl403142V  0.466
2013 Byun KE, Chung HJ, Lee J, Yang H, Song HJ, Heo J, Seo DH, Park S, Hwang SW, Yoo I, Kim K. Graphene for true Ohmic contact at metal-semiconductor junctions. Nano Letters. 13: 4001-5. PMID 23978262 DOI: 10.1021/Nl402367Y  0.43
2013 Kim E, Byun KE, Choi DS, Lee DJ, Cho DH, Lee BY, Yang H, Heo J, Chung HJ, Seo S, Hong S. Electrical control of kinesin-microtubule motility using a transparent functionalized-graphene substrate. Nanotechnology. 24: 195102. PMID 23594920 DOI: 10.1088/0957-4484/24/19/195102  0.43
2013 Woo YS, Seo DH, Yeon D, Heo J, Chung H, Benayad A, Chung J, Han H, Lee H, Seo S, Choi J. Low temperature growth of complete monolayer graphene films on Ni-doped copper and gold catalysts by a self-limiting surface reaction Carbon. 64: 315-323. DOI: 10.1016/J.Carbon.2013.07.081  0.409
2013 Chang J, Suh M, Heo J, Kim D, Kim J, Lee S, Chung H, Kim Y. Transparent Graphene Electrodes for Highly Efficient III–V Multijunction Concentrator Solar Cells Energy Technology. 1: 283-286. DOI: 10.1002/Ente.201200039  0.355
2012 Yang H, Heo J, Park S, Song HJ, Seo DH, Byun KE, Kim P, Yoo I, Chung HJ, Kim K. Graphene barristor, a triode device with a gate-controlled Schottky barrier. Science (New York, N.Y.). 336: 1140-3. PMID 22604723 DOI: 10.1126/Science.1220527  0.466
2012 Lee J, Shin H, Chung H, Lee J, Heo J, Yang H, Lee S, Seo S. Compact modeling of extremely scaled graphene FETs Journal of the Korean Physical Society. 61: 1797-1801. DOI: 10.3938/Jkps.61.1797  0.468
2011 Kang CG, Kang JW, Lee SK, Lee SY, Cho CH, Hwang HJ, Lee YG, Heo J, Chung HJ, Yang H, Seo S, Park SJ, Ko KY, Ahn J, Lee BH. Characteristics of CVD graphene nanoribbon formed by a ZnO nanowire hardmask. Nanotechnology. 22: 295201. PMID 21673381 DOI: 10.1088/0957-4484/22/29/295201  0.454
2011 Lee SH, Chung HJ, Heo J, Yang H, Shin J, Chung UI, Seo S. Band gap opening by two-dimensional manifestation of peierls instability in graphene. Acs Nano. 5: 2964-9. PMID 21405129 DOI: 10.1021/Nn1035894  0.424
2011 Jeon I, Yang H, Lee SH, Heo J, Seo DH, Shin J, Chung UI, Kim ZG, Chung HJ, Seo S. Passivation of metal surface states: microscopic origin for uniform monolayer graphene by low temperature chemical vapor deposition. Acs Nano. 5: 1915-20. PMID 21309604 DOI: 10.1021/Nn102916C  0.439
2011 Kang CG, Lee SK, Lee YG, Hwang HJ, Cho C, Lim SK, Heo J, Chung H, Yang H, Seo S, Lee BH. Enhanced Current Drivability of CVD Graphene Interconnect in Oxygen-Deficient Environment Ieee Electron Device Letters. 32: 1591-1593. DOI: 10.1109/Led.2011.2166240  0.437
2011 Heo J, Chung HJ, Lee SH, Yang H, Seo DH, Shin JK, Chung UI, Seo S, Hwang EH, Das Sarma S. Nonmonotonic temperature dependent transport in graphene grown by chemical vapor deposition Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.035421  0.401
2011 Song EB, Lian B, Min Kim S, Lee S, Chung TK, Wang M, Zeng C, Xu G, Wong K, Zhou Y, Rasool HI, Seo DH, Chung HJ, Heo J, Seo S, et al. Robust bi-stable memory operation in single-layer graphene ferroelectric memory Applied Physics Letters. 99. DOI: 10.1063/1.3619816  0.439
2011 Lee J, Chung H, Heo J, Seo S, Cho IH, Kwon H, Lee J. Reliability of bottom-gate graphene field-effect transistors prepared by using inductively coupled plasma-chemical vapor deposition Applied Physics Letters. 98: 193504. DOI: 10.1063/1.3589120  0.396
2007 Refael G, Heo J, Bockrath M. Sagnac interference in carbon nanotube loops. Physical Review Letters. 98: 246803. PMID 17677982 DOI: 10.1103/Physrevlett.98.246803  0.545
2005 Heo J, Bockrath M. Local electronic structure of single-walled carbon nanotubes from electrostatic force microscopy. Nano Letters. 5: 853-7. PMID 15884883 DOI: 10.1021/Nl0501765  0.562
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