| Year |
Citation |
Score |
| 2020 |
Admassu D, Durowade T, Velicu S, Sivananthan S, Gao W. Estimation of the mechanical stiffness constant of MEMS-based parallel-plate micro-actuators Microsystem Technologies-Micro-and Nanosystems-Information Storage and Processing Systems. 1-9. DOI: 10.1007/S00542-020-05022-1 |
0.381 |
|
| 2015 |
Fahey S, Velicu S, Bommena R, Zhao J, Cowan V, Morath C, Sivananthan S. Proton irradiation of MWIR HgCdTe/CdZnTe Proceedings of Spie - the International Society For Optical Engineering. 9616. DOI: 10.1117/12.2189829 |
0.573 |
|
| 2014 |
Colegrove E, Stafford B, Gao W, Gessert T, Sivananthan S. Arsenic doped heteroepitaxial CdTe by MBE for applications in thin-film photovoltaics 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 3261-3265. DOI: 10.1109/PVSC.2014.6925632 |
0.692 |
|
| 2014 |
Paulauskas T, Buurma C, Colegrove E, Stafford B, Guo Z, Chan MKY, Sun C, Kim MJ, Sivananthan S, Klie RF. Atomic scale study of polar Lomer-Cottrell and Hirth lock dislocation cores in CdTe Acta Crystallographica Section a: Foundations and Advances. 70: 524-531. DOI: 10.1107/S2053273314019639 |
0.68 |
|
| 2013 |
Garland JW, Grein C, Sivananthan S. Arsenic p-doping of HgCdTe grown by molecular beam epitaxy (MBE): A solved problem? Journal of Electronic Materials. 42: 3331-3336. DOI: 10.1007/S11664-013-2739-0 |
0.404 |
|
| 2013 |
Buurma C, Boieriu P, Bommena R, Sivananthan S. Applications of the infrared measurement analyzer: Hydrogenated lwir hgcdte detectors Journal of Electronic Materials. 42: 3283-3287. DOI: 10.1007/S11664-013-2726-5 |
0.729 |
|
| 2012 |
Fahey S, Bommena R, Kodama R, Sporken R, Sivananthan S. Selective-area epitaxy of CdTe on CdTe/ZnTe/Si(211) through a nanopatterned silicon nitride mask Journal of Electronic Materials. 41: 2899-2907. DOI: 10.1007/S11664-012-2056-Z |
0.65 |
|
| 2011 |
Sivananthan S, Carmody M, Gilmore C, Garland J. Molecular beam epitaxial growth of CdTe and related II-VI materials on Si for the fabrication of infrared detectors and solar cells Proceedings of Spie - the International Society For Optical Engineering. 7995. DOI: 10.1117/12.888643 |
0.317 |
|
| 2011 |
Wang XJ, Tari S, Sporken R, Sivananthan S. ZnTe/GaAs(2 1 1)B heterojunction valence band discontinuity measured by X-ray photoelectron spectroscopy Applied Surface Science. 257: 3346-3349. DOI: 10.1016/j.apsusc.2010.11.019 |
0.348 |
|
| 2010 |
Sivananthan S, Garland JW, Carmody MW. Multijunction single-crystal CdTe-based solar cells: Opportunities and challenges Proceedings of Spie - the International Society For Optical Engineering. 7683. DOI: 10.1117/12.852599 |
0.34 |
|
| 2010 |
Kim KC, Kim HJ, Suh SH, Carmody M, Sivananthan S, Kim JS. Metalorganic chemical vapor deposition of CdTe(133) epilayers on si(211) substrates Journal of Electronic Materials. 39: 863-867. DOI: 10.1007/S11664-010-1220-6 |
0.469 |
|
| 2009 |
Sporken R, Kiran R, Casselman T, Aqariden F, Velicu S, Chang Y, Sivananthan S. The effect of wet etching on surface properties of HgCdTe Journal of Electronic Materials. 38: 1781-1789. DOI: 10.1007/S11664-009-0844-X |
0.52 |
|
| 2008 |
Seldrum T, Bommena R, Samain L, Dumont J, Sivananthan S, Sporken R. Selective growth of CdTe on patterned CdTeSi (211) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1105-1109. DOI: 10.1116/1.2912090 |
0.441 |
|
| 2008 |
Bommena R, Seldrum T, Samain L, Sporken R, Sivananthan S, Brueck SRJ. Strain reduction in selectively grown CdTe by MBE on nanopatterned Silicon on Insulator (SOI) substrates Journal of Electronic Materials. 37: 1255-1260. DOI: 10.1007/S11664-008-0456-X |
0.456 |
|
| 2008 |
Wijewarnasuriya PS, Emelie PY, D'souza A, Brill G, Stapelbroek MG, Velicu S, Chen Y, Grein C, Sivananthan S, Dhar NK. Nonequilibrium operation of arsenic diffused long-wavelength infrared HgCdTe photodiodes Journal of Electronic Materials. 37: 1283-1290. DOI: 10.1007/S11664-008-0455-Y |
0.364 |
|
| 2007 |
Wang C, Wang X, Zhao J, Chang Y, Grein CH, Sivananthan S, Smith DJ. Microstructure of interfacial HgTe/CdTe superlattice layers for growth of HgCdTe on CdZnTe (2 1 1)B substrates Journal of Crystal Growth. 309: 153-157. DOI: 10.1016/J.Jcrysgro.2007.09.027 |
0.631 |
|
| 2007 |
Chang Y, Fulk C, Zhao J, Grein CH, Sivananthan S. Molecular beam epitaxy growth of HgCdTe for high performance infrared photon detectors Infrared Physics and Technology. 50: 284-290. DOI: 10.1016/j.infrared.2006.10.017 |
0.755 |
|
| 2007 |
Mallick S, Kiran R, Ghosh S, Velicu S, Sivananthan S. Comparative study of HgCdTe etchants: An electrical characterization Journal of Electronic Materials. 36: 993-999. DOI: 10.1007/S11664-007-0159-8 |
0.538 |
|
| 2006 |
Wang C, Smith DJ, Tobin S, Parodos T, Zhao J, Chang Y, Sivananthan S. Understanding ion-milling damage in Hg 1-xCd xTe epilayers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 995-1000. DOI: 10.1116/1.2207148 |
0.356 |
|
| 2006 |
Kiran R, Mallick S, Hahn SR, Lee TS, Sivananthan S, Ghosh S, Wijewarnasuriya PS. Passivation effect on optical and electrical properties of molecular beam epitaxy-grown HgCdTe/CdTe/Si layers Journal of Electronic Materials. 35: 1379-1384. DOI: 10.1007/S11664-006-0271-1 |
0.594 |
|
| 2005 |
Chang Y, Zhao J, Abad H, Grein CH, Sivananthan S, Aoki T, Smith DJ. Performance and reproducibility enhancement of HgCdTe molecular beam epitaxy growth on CdZnTe substrates using interfacial HgTeCdTe superlattice layers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1890471 |
0.499 |
|
| 2005 |
Bommena R, Fulk C, Zhao J, Lee TS, Sivananthan S, Brueck SRJ, Hersee SD. Cadmium telluride growth on patterned substrates for mercury cadmium telluride infrared detectors Journal of Electronic Materials. 34: 704-709. |
0.741 |
|
| 2004 |
Badano G, Chang Y, Garland JW, Sivananthan S. In-situ ellipsometry studies of adsorption of Hg on CdTe(211)B/Si(211) and molecular beam epitaxy growth of HgCdTe(211)B Journal of Electronic Materials. 33: 583-589. DOI: 10.1007/S11664-004-0050-9 |
0.733 |
|
| 2003 |
Kim J, Suh S, Sivananthan S. Improvement of HgCdTe Qualities grown by MOVPE using MBE grown CdTe/Si as Substrate Journal of Sensor Science and Technology. 12: 282-288. DOI: 10.5369/Jsst.2003.12.6.282 |
0.505 |
|
| 2003 |
Badano G, Chang Y, Garland JW, Sivananthan S. Temperature-dependent adsorption of hg on cdte(211)b studied by spectroscopic ellipsometry Applied Physics Letters. 83: 2324-2326. DOI: 10.1063/1.1610252 |
0.68 |
|
| 2003 |
Badano G, Zhao J, Chang Y, Garland JW, Sivananthan S. Ellipsometric study of the nucleation of (2 1 1) HgCdTe on CdZnTe(2 1 1)B Journal of Crystal Growth. 258: 374-379. DOI: 10.1016/S0022-0248(03)01559-8 |
0.714 |
|
| 2003 |
Badano G, Garland JW, Sivananthan S. Accuracy of the in situ determination of the CdZnTe temperature by ellipsometry before the growth of HgCdTe by MBE Journal of Crystal Growth. 251: 571-575. DOI: 10.1016/S0022-0248(02)02430-2 |
0.726 |
|
| 2003 |
Selamet Y, Singh R, Zhao J, Zhou YD, Sivananthan S, Dhar N. Gold diffusion in mercury cadmium telluride grown by molecular beam epitaxy Proceedings of Spie - the International Society For Optical Engineering. 5209: 67-74. |
0.313 |
|
| 2002 |
Suh SH, Kim JS, Seo DW, Hahn SR, Sivananthan S. Characteristics of HgCdTe layers grown by MOVPE on (211)B CdTe/Si substrates Proceedings of Spie - the International Society For Optical Engineering. 4795: 1-7. DOI: 10.1117/12.453801 |
0.419 |
|
| 2002 |
Zhao J, Zhou YD, Badano G, Selamet Y, Grein CH, Sivananthan S. MBE growth of HgCdTe HOT detector heterostructures Proceedings of Spie - the International Society For Optical Engineering. 4795: 82-87. DOI: 10.1117/12.452257 |
0.749 |
|
| 2002 |
Badano G, Garland JW, Zhao J, Sivananthan S. Improved model of HgCdTe's pseudo dielectric function for in-situ ellipsometry data analysis during MBE growth Proceedings of Spie - the International Society For Optical Engineering. 4795: 70-75. DOI: 10.1117/12.451906 |
0.724 |
|
| 2002 |
Boieriu P, Sporken R, Sivananthan S. Valence band offset at the CdS/CdTe interface Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 1777-1780. DOI: 10.1116/1.1491989 |
0.706 |
|
| 2002 |
Badano G, Zhao J, Sivananthan S, Aoki T, Smith D. In-situ ellipsometric characterization of nucleation conditions of HgCdTe grown by MBE Mbe 2002 - 2002 12th International Conference On Molecular Beam Epitaxy. 251-252. DOI: 10.1109/MBE.2002.1037854 |
0.712 |
|
| 2001 |
Velicu S, Ashokan R, Grein CH, Sivananthan S, Boieriu P, Rafol D. High temperature HgCdTe/CdTe/Si infrared photon detectors by MBE Proceedings of Spie - the International Society For Optical Engineering. 4454: 180-187. DOI: 10.1117/12.448173 |
0.741 |
|
| 2001 |
Selamet Y, Badano G, Grein CH, Boieriu P, Nathan V, Sivananthan S. Electrical activation and electrical properties of arsenic doped Hg1-xCdxTe epilayers grown by MBE Proceedings of Spie - the International Society For Optical Engineering. 4454: 71-77. DOI: 10.1117/12.448162 |
0.77 |
|
| 2001 |
Badano G, Daraselia M, Sivananthan S. In situ monitoring of molecular-beam-epitaxy grown Hg1-xCdxTe by Fourier transform infrared spectroscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1576-1579. DOI: 10.1116/1.1387455 |
0.689 |
|
| 2001 |
Tari S, Brill G, Sivananthan S, Floyd M, Smith DJ. Surfactant-mediated growth and characterization of Ge(211)/Si(211) heterostructures grown by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1562-1566. DOI: 10.1116/1.1377588 |
0.354 |
|
| 2001 |
Selamet Y, Grein CH, Lee TS, Sivananthan S. Electrical properties of in situ As doped Hg1-xCdxTe epilayers grown by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1488-1491. DOI: 10.1116/1.1374628 |
0.35 |
|
| 2001 |
Floyd M, Zhang Y, Drucker J, Smith DJ, Tari S, Sivananthan S. Evolution of self-assembled Ge/Si(211) islands Applied Physics Letters. 79: 4518-4520. DOI: 10.1063/1.1428772 |
0.309 |
|
| 2001 |
Ashokan R, Sivananthan S, Velicu S. Mercury cadmium telluride - a superior choice for near-room temperature infrared detectors Defence Science Journal. 51: 67-73. |
0.354 |
|
| 2000 |
Tsen SCY, Smith DJ, Crozier PA, Rujirawat S, Brill G, Sivananthan S. Interface structure and Zn diffusion in the Cd Te/Zn Te/Si system grown by MBE Materials Research Society Symposium - Proceedings. 589: 197-202. DOI: 10.1557/Proc-589-197 |
0.331 |
|
| 2000 |
Ashokan R, Lee TS, Dhar NK, Yoo SS, Sivananthan S. Effect of annealing on arsenic activation and device performance in mid-infrared HgCdTe on silicon grown by MBE Proceedings of Spie - the International Society For Optical Engineering. 3948: 63-72. |
0.344 |
|
| 2000 |
Yang B, Xin Y, Rujirawat S, Browning ND, Sivananthan S. Molecular beam epitaxial growth and structural properties of HgCdTe layers on CdTe(211)B/Si(211) substrates Journal of Applied Physics. 88: 115-119. |
0.374 |
|
| 2000 |
Boieriu P, Sporken R, Xin Y, Browning ND, Sivananthan S. Wurtzite CdS on CdTe grown by molecular beam epitaxy Journal of Electronic Materials. 29: 718-722. |
0.751 |
|
| 1999 |
Wiame F, Mathot G, Sivananthan S, Rujirawat S, Caudano R, Sporken R. STM study of the Te/Si(100) interface Applied Surface Science. 142: 475-480. DOI: 10.1016/S0169-4332(98)00686-2 |
0.363 |
|
| 1999 |
Grein CH, Garland JW, Sivananthan S, Wijewarnasuriya PS, Aqariden F, Fuchs M. Arsenic incorporation in MBE grown Hg1-xCdxTe Journal of Electronic Materials. 28: 789-792. |
0.32 |
|
| 1999 |
Xin Y, Rujirawat S, Browning ND, Sporken R, Sivananthan S, Pennycook SJ, Dhar NK. The effect of As passivation on the molecular beam epitaxial growth of high-quality single-domain CdTe(111)B on Si(111) substrates Applied Physics Letters. 75: 349-351. |
0.326 |
|
| 1998 |
Vydyanath HR, Wijewarnasuriya PS, Sivananthan S, Nathan V. Optimization of the MBE growth of Hg1-xCdxTe for advanced infrared applications Proceedings of Spie - the International Society For Optical Engineering. 3379: 572-576. DOI: 10.1117/12.317625 |
0.374 |
|
| 1998 |
Shi XH, Rujirawat S, Ashokan R, Grein CH, Sivananthan S. Ionization energy of acceptors in As-doped HgCdTe grown by molecular beam epitaxy Applied Physics Letters. 73: 638-640. DOI: 10.1063/1.121932 |
0.377 |
|
| 1998 |
Wijewarnasuriya PS, Sivananthan S. Arsenic incorporation in HgCdTe grown by molecular beam epitaxy Applied Physics Letters. 72: 1694-1696. DOI: 10.1063/1.121154 |
0.37 |
|
| 1998 |
Rujirawat S, Smith DJ, Faurie JP, Neu G, Nathan V, Sivananthan S. Microstructural and optical characterization of CdTe(211)B/ZnTe/Si(211) grown by molecular beam epitaxy Journal of Electronic Materials. 27: 1047-1052. |
0.433 |
|
| 1997 |
Rujirawat S, Wijewarnasuriya PS, Chen YP, Aqariden F, Sivananthan S. HgCdTe(211)B grown on CdTe(211)B/ZnTe(211)B/Si(211) by MBE Materials Research Society Symposium - Proceedings. 450: 281-285. DOI: 10.1557/Proc-450-281 |
0.457 |
|
| 1997 |
Aqariden F, Wijewarnasuriya PS, Rujirawat S, Sivananthan S. P-type doping with arsenic in MBE-HgCdTe using planar doping approach Materials Research Society Symposium - Proceedings. 450: 251-255. DOI: 10.1557/Proc-450-251 |
0.485 |
|
| 1997 |
Tsen SCY, Smith DJ, Rujirawat S, Sivananthan S. Initial growth and interface structure of CdTe thin films grown by MBE on 4° miscut Si substrates Materials Research Society Symposium - Proceedings. 440: 265-270. DOI: 10.1557/Proc-440-265 |
0.402 |
|
| 1997 |
Kim CC, Daraselia M, Garland JW, Sivananthan S. Temperature dependence of the optical properties of CdTe Physical Review B - Condensed Matter and Materials Physics. 56: 4786-4797. DOI: 10.1103/Physrevb.56.4786 |
0.364 |
|
| 1997 |
Mehendale M, Sivananthan S, Schroeder WA. Hot electron relaxation dynamics in ZnSe Applied Physics Letters. 71: 1089-1091. DOI: 10.1063/1.119736 |
0.311 |
|
| 1997 |
Hutchins JW, Skromme BJ, Chen YP, Sivananthan S, Posthill JB. Optical investigation of strain and defects in (100) CdTe/Ge/Si and ZnTe/Ge/Si grown by molecular beam epitaxy Applied Physics Letters. 71: 350-352. DOI: 10.1063/1.119534 |
0.424 |
|
| 1997 |
Rujirawat S, Almeida LA, Chen YP, Sivananthan S, Smith DJ. High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy Applied Physics Letters. 71: 1810-1812. DOI: 10.1063/1.119406 |
0.487 |
|
| 1997 |
Wallis DJ, Browning ND, Sivananthan S, Nellist PD, Pennycook SJ. Atomic layer graphoepitaxy for single crystal heterostructures Applied Physics Letters. 70: 3113-3115. DOI: 10.1063/1.119107 |
0.415 |
|
| 1997 |
Kim CC, Chen YP, Daraselia M, Sivananthan S, Tsen S-Y, Smith DJ. Reflectivity difference spectroscopy study of thin film ZnSe grown on GaAs by molecular beam epitaxy Journal of Crystal Growth. 328-333. DOI: 10.1016/S0022-0248(96)01046-9 |
0.465 |
|
| 1997 |
Kim CC, Chen YP, Sivananthan S, Tsen SCY, Smith DJ. Molecular beam epitaxial growth of ZnSe on GaAs substrates: Influence of precursors on interface quality Journal of Crystal Growth. 175: 613-618. DOI: 10.1016/S0022-0248(96)00999-2 |
0.455 |
|
| 1997 |
Sivananthan S, Wijewarnasuriya PS, Aqariden F, Vydyanath HR, Zandian M, Edwall DD, Arias JM. Mode of arsenic incorporation in HgCdTe grown by MBE Journal of Electronic Materials. 26: 621-624. DOI: 10.1007/S11664-997-0205-6 |
0.463 |
|
| 1997 |
Wallis DJ, Browning ND, Sivananthan S, Nellist PD, Pennycook SJ. Atomic layer graphoepitaxy for single crystal heterostructures Applied Physics Letters. 70: 3113-3115. |
0.303 |
|
| 1997 |
Wijewarnasuriya PS, Aqariden F, Grein CH, Faurie JP, Sivananthan S. p-type doping with arsenic in (2 1 1)B HgCdTe grown by MBE Journal of Crystal Growth. 175: 647-652. |
0.393 |
|
| 1996 |
Wang L, Sivananthan S, Sporken R, Caudano R. Interface properties and valence-band discontinuity of MnS/ZnSe heterostructures. Physical Review. B, Condensed Matter. 54: 2718-2722. PMID 9986122 DOI: 10.1103/Physrevb.54.2718 |
0.392 |
|
| 1996 |
Kim CC, Sivananthan S. Optical properties of ZnSe and its modeling. Physical Review. B, Condensed Matter. 53: 1475-1484. PMID 9983609 DOI: 10.1103/Physrevb.53.1475 |
0.336 |
|
| 1996 |
Smith DJ, Tsen SCY, Chen YP, Sivananthan S, Posthill JB. Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers Applied Physics Letters. 69: 2086-2088. DOI: 10.1063/1.116888 |
0.491 |
|
| 1996 |
Wijewarnasuriya PS, Faurie JP, Sivananthan S. Doping of (211) B mercury cadmium telluride Journal of Crystal Growth. 159: 1136-1140. DOI: 10.1016/0022-0248(95)00877-2 |
0.477 |
|
| 1996 |
Yoo SS, Rodricks B, Faurie JP, Sivananthan S, Montano PA. Performance of MBE grown CdTe photoconductor arrays for hard x-ray detection Journal of Crystal Growth. 159: 906-909. DOI: 10.1016/0022-0248(95)00858-6 |
0.383 |
|
| 1996 |
Sivananthan S, Wang L, Sporken R, Chen J, Skromme BJ, Smith DJ. on GaAs grown by molecular beam epitaxy Journal of Crystal Growth. 159: 94-98. DOI: 10.1016/0022-0248(95)00856-X |
0.421 |
|
| 1996 |
Hutchins JW, Parameshwaran B, Skromme BJ, Smith DJ, Sivananthan S. Optical characterization of ZnMnSSe quaternary alloys for visible light emitting devices Journal of Crystal Growth. 159: 50-53. DOI: 10.1016/0022-0248(95)00854-3 |
0.384 |
|
| 1996 |
Tsen S-Y, Smith DJ, Hutchins JW, Skromme BJ, Chen YP, Sivananthan S. Heteroepitaxial CdTe(111) grown by MBE on nominally flat and misoriented Si(001) substrates : characterization by electron microscopy and optical methods Journal of Crystal Growth. 159: 58-63. DOI: 10.1016/0022-0248(95)00823-3 |
0.483 |
|
| 1996 |
Almeida LA, Chen YP, Faurie JP, Sivananthan S, Smith DJ, Tsen S-Y. Growth of high quality CdTe on Si substrates by molecular beam epitaxy Journal of Electronic Materials. 25: 1402-1405. DOI: 10.1007/Bf02655041 |
0.476 |
|
| 1996 |
Yoo SS, Rodricks B, Sivananthan S, Faurie JP, Montano PA. Synchrotron x-ray photoconductor detector arrays made on MBE grown CdTe Journal of Electronic Materials. 25: 1306-1311. DOI: 10.1007/Bf02655024 |
0.465 |
|
| 1996 |
Wijewarnasuriya PS, Yoo SS, Faurie JP, Sivananthan S. P-type doping with arsenic in (211)B HgCdTe grown by MBE Journal of Electronic Materials. 25: 1300-1305. DOI: 10.1007/Bf02655023 |
0.458 |
|
| 1995 |
Chen YP, Saginur M, Kim CC, Sivananthan S, Smith D, Tsen SCY. Molecular beam epitaxial growth of ZnSe, ZnSSe and ZnMnSSe layers on GaAs substrates for blue-green laser structures Mrs Proceedings. 417: 337-344. DOI: 10.1557/Proc-417-337 |
0.43 |
|
| 1995 |
Smith DJ, Tsen SCY, Chen YP, Faurie JP, Sivananthan S. Microstructure of heteroepitaxial CdTe grown on misoriented Si(001) substrates Applied Physics Letters. 67: 1591. DOI: 10.1063/1.114949 |
0.355 |
|
| 1995 |
Yoo SS, Sivananthan S, Faurie JP, Rodricks B, Bai J, Montano PA. New CdTe photoconductor array detector for x-ray applications Applied Physics Letters. 66: 2037-2039. DOI: 10.1063/1.113684 |
0.384 |
|
| 1995 |
Wijewarnasuriya PS, Lange MD, Sivananthan S, Faurie JP. Minority carrier lifetime in indium-doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy Journal of Electronic Materials. 24: 545-549. DOI: 10.1007/BF02657961 |
0.364 |
|
| 1995 |
Wijewarnasuriya PS, Langer MD, Sivananthan S, Faurie JP. Analysis of low doping limitation in molecular beam epitaxially grown HgCdTe(211)B epitaxial layers Journal of Electronic Materials. 24: 1211-1218. DOI: 10.1007/BF02653076 |
0.37 |
|
| 1995 |
Skromme BJ, Zhang Y, Smith DJ, Sivananthan S. Growth and characterization of pseudomorphic single crystal zinc blende Mn Applied Physics Letters. 67: 2690. |
0.379 |
|
| 1994 |
Wijewarnasuriya PS, Lange MD, Sivananthan S, Faurie JP. Carrier recombination in indium-doped HgCdTe(211)B epitaxial layers grown by molecular beam epitaxy Journal of Applied Physics. 75: 1005-1009. DOI: 10.1063/1.356506 |
0.337 |
|
| 1993 |
Faurie JP, Sporken R, Chen YP, Lange MD, Sivananthan S. Heteroepitaxy of CdTe on GaAs and silicon substrates Materials Science and Engineering B. 16: 51-56. DOI: 10.1016/0921-5107(93)90012-C |
0.408 |
|
| 1991 |
Sporken R, Lange MD, Sivananthan S, Faurie JP. Molecular beam epitaxy and characterization of HgCdTe(111)B on Si(100) Applied Physics Letters. 59: 81-83. DOI: 10.1063/1.105530 |
0.346 |
|
| 1991 |
Faurie JP, Sporken R, Sivananthan S, Lange MD. New development on the control of homoepitaxial and heteroepitaxial growth of CdTe and HgCdTe by MBE Journal of Crystal Growth. 111: 698-710. DOI: 10.1016/0022-0248(91)91066-J |
0.346 |
|
| 1990 |
Shaw JL, Brillson LJ, Sivananthan S, Faurie JP. Deep level photoluminescence spectroscopy of CdTe epitaxial layer surfaces Applied Physics Letters. 56: 1266-1268. DOI: 10.1063/1.102532 |
0.332 |
|
| 1989 |
Boukerche M, Sivananthan S, Wijewarnasuriya PS, Sou IK, Faurie JP. Electrical properties of intrinsicp-type shallow levels in HgCdTe grown by molecular-beam epitaxy in the (111)B orientation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 311-313. DOI: 10.1116/1.576118 |
0.342 |
|
| 1989 |
Monfroy G, Sivananthan S, Faurie JP, Reno JL. Study of CdTe(111)B epilayers grown by molecular-beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 326-330. DOI: 10.1116/1.576097 |
0.347 |
|
| 1989 |
Sporken R, Sivananthan S, Mahavadi KK, Monfroy G, Boukerche M, Faurie JP. Molecular beam epitaxial growth of CdTe and HgCdTe on Si (100) Applied Physics Letters. 55: 1879-1881. DOI: 10.1063/1.102159 |
0.394 |
|
| 1987 |
Chu X, Sivananthan S, Faurie JP. Hg1-xMnxTe-CdTe superlattices grown by molecular beam epitaxy Applied Physics Letters. 50: 597-599. DOI: 10.1063/1.98092 |
0.336 |
|
| 1986 |
Hefetz Y, Lee D, Nurmikko AV, Sivananthan S, Chu X, Faurie J. Two-Dimensional Excitons in A Strongly Localized Regime in CdTe/ZnTe Superlattices Mrs Proceedings. 77. DOI: 10.1557/Proc-77-327 |
0.3 |
|
| 1986 |
Faurie JP, Sivananthan S, Reno J. Present status of molecular beam epitaxial growth and properties of HgTe-CdTe superlattices Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 2096-2100. DOI: 10.1116/1.574034 |
0.354 |
|
| 1986 |
Faurie JP, Reno J, Sivananthan S, Sou IK, Chu X, Boukerche M, Wijewarnasuriya PS. Molecular beam epitaxial growth and characterization of HgCdTe, HgZnTe, and HgMnTe on GaAs(100) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 2067-2071. DOI: 10.1116/1.574028 |
0.372 |
|
| 1986 |
Monfroy G, Sivananthan S, Chu X, Faurie JP, Knox RD, Staudenmann JL. Molecular beam epitaxial growth of a novel strained-layer superlattice system: CdTe-ZnTe Applied Physics Letters. 49: 152-154. DOI: 10.1063/1.97208 |
0.332 |
|
| 1986 |
Faurie JP, Sivananthan S, Chu X, Wijewarnasuriya PS. Molecular beam epitaxial growth of a novel strained layer type III superlattice system: HgTe-ZnTe Applied Physics Letters Applied Physics Letters. 48: 785-787. DOI: 10.1063/1.96721 |
0.345 |
|
| 1986 |
Hsu C, Sivananthan S, Chu X, Faurie JP. Polarity determination of CdTe(111) orientation grown on GaAs(100) by molecular beam epitaxy Applied Physics Letters. 48: 908-910. DOI: 10.1063/1.96654 |
0.358 |
|
| 1986 |
Sivananthan S, Chu X, Reno J, Faurie JP. Relation between crystallographic orientation and the condensation coefficients of Hg, Cd, and Te during molecular-beam-epitaxial growth of Hg 1-xCdxTe and CdTe Journal of Applied Physics. 60: 1359-1363. DOI: 10.1063/1.337310 |
0.322 |
|
| 1985 |
Faurie JP, Boukerche M, Reno J, Sivananthan S, Hsu C. Molecular beam epitaxy of alloys and superlattices involving mercury Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 55-59. DOI: 10.1116/1.573245 |
0.366 |
|
| 1985 |
Olego DJ, Faurie JP, Sivananthan S, Raccah PM. Optoelectronic properties of Cd1-xZnxTe films grown by molecular beam epitaxy on GaAs substrates Applied Physics Letters. 47: 1172-1174. DOI: 10.1063/1.96316 |
0.325 |
|
| 1985 |
Sivananthan S, Chu X, Boukerche M, Faurie JP. Growth of Hg1-xZnxTe by molecular beam epitaxy on a GaAs(100) substrate Applied Physics Letters. 47: 1291-1293. DOI: 10.1063/1.96308 |
0.391 |
|
| 1984 |
Faurie JP, Sivananthan S, Boukerche M, Reno J. Molecular beam epitaxial growth of high quality HgTe and Hg 1-xCdxTe onto GaAs(001) substrates Applied Physics Letters. 45: 1307-1309. DOI: 10.1063/1.95129 |
0.412 |
|
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