| Year |
Citation |
Score |
| 2023 |
Xu M, Bao DL, Li A, Gao M, Meng D, Li A, Du S, Su G, Pennycook SJ, Pantelides ST, Zhou W. Single-atom Vibrational Spectroscopy with Chemical Bonding Sensitivity. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 29: 616-617. PMID 37613043 DOI: 10.1093/micmic/ozad067.299 |
0.494 |
|
| 2023 |
Wang H, Bao L, Guzman R, Wu K, Wang A, Liu L, Wu L, Chen J, Huan Q, Zhou W, Pantelides ST, Gao HJ. Ultrafast-programmable two-dimensional homojunctions based on van der Waals heterostructures on a silicon substrate. Advanced Materials (Deerfield Beach, Fla.). e2301067. PMID 37204321 DOI: 10.1002/adma.202301067 |
0.476 |
|
| 2023 |
Xu M, Bao DL, Li A, Gao M, Meng D, Li A, Du S, Su G, Pennycook SJ, Pantelides ST, Zhou W. Single-atom vibrational spectroscopy with chemical-bonding sensitivity. Nature Materials. PMID 36928385 DOI: 10.1038/s41563-023-01500-9 |
0.552 |
|
| 2022 |
Zhang YT, Wang YP, Zhang X, Zhang YY, Du S, Pantelides ST. Structure of Amorphous Two-Dimensional Materials: Elemental Monolayer Amorphous Carbon versus Binary Monolayer Amorphous Boron Nitride. Nano Letters. PMID 35959969 DOI: 10.1021/acs.nanolett.2c02542 |
0.662 |
|
| 2022 |
Bao DL, O'Hara A, Du S, Pantelides ST. Tunable, Ferroelectricity-Inducing, Spin-Spiral Magnetic Ordering in Monolayer FeOCl. Nano Letters. 22: 3598-3603. PMID 35451844 DOI: 10.1021/acs.nanolett.1c05043 |
0.518 |
|
| 2021 |
Zhu Y, Tao L, Chen X, Ma Y, Ning S, Zhou J, Zhao X, Bosman M, Liu Z, Du S, Pantelides ST, Zhou W. Anisotropic point defects in rhenium diselenide monolayers. Iscience. 24: 103456. PMID 34888499 DOI: 10.1016/j.isci.2021.103456 |
0.564 |
|
| 2021 |
Song Y, Qian K, Tao L, Wang Z, Guo H, Chen H, Zhang S, Zhang YY, Lin X, Pantelides ST, Du S, Gao HJ. Intrinsically Honeycomb-Patterned Hydrogenated Graphene. Small (Weinheim An Der Bergstrasse, Germany). e2102687. PMID 34846103 DOI: 10.1002/smll.202102687 |
0.711 |
|
| 2021 |
Wu L, Wang A, Shi J, Yan J, Zhou Z, Bian C, Ma J, Ma R, Liu H, Chen J, Huang Y, Zhou W, Bao L, Ouyang M, Pennycook SJ, ... Pantelides ST, et al. Atomically sharp interface enabled ultrahigh-speed non-volatile memory devices. Nature Nanotechnology. PMID 33941919 DOI: 10.1038/s41565-021-00904-5 |
0.428 |
|
| 2021 |
Zheng Q, Feng T, Hachtel JA, Ishikawa R, Cheng Y, Daemen L, Xing J, Idrobo JC, Yan J, Shibata N, Ikuhara Y, Sales BC, Pantelides ST, Chi M. Direct visualization of anionic electrons in an electride reveals inhomogeneities. Science Advances. 7. PMID 33827817 DOI: 10.1126/sciadv.abe6819 |
0.519 |
|
| 2020 |
Guo H, Wang X, Huang L, Jin X, Yang Z, Zhou Z, Hu H, Zhang YY, Lu H, Zhang Q, Shen C, Lin X, Gu L, Dai Q, Bao L, ... ... Pantelides ST, et al. Insulating SiO under Centimeter-Scale, Single-Crystal Graphene Enables Electronic-Device Fabrication. Nano Letters. PMID 33200603 DOI: 10.1021/acs.nanolett.0c03254 |
0.721 |
|
| 2020 |
Liu L, Wu L, Wang A, Liu H, Ma R, Wu K, Chen J, Zhou Z, Tian Y, Yang H, Shen C, Bao L, Qin Z, Pantelides ST, Gao HJ. Ferroelectric-Gated InSe Photodetectors with High On/Off Ratios and Photoresponsivity. Nano Letters. PMID 32822183 DOI: 10.1021/Acs.Nanolett.0C02448 |
0.526 |
|
| 2020 |
Dziaugys A, Kelley K, Brehm JA, Tao L, Puretzky A, Feng T, O'Hara A, Neumayer S, Chyasnavichyus M, Eliseev EA, Banys J, Vysochanskii Y, Ye F, Chakoumakos BC, Susner MA, ... ... Pantelides ST, et al. Piezoelectric domain walls in van der Waals antiferroelectric CuInPSe. Nature Communications. 11: 3623. PMID 32681040 DOI: 10.1038/S41467-020-17137-0 |
0.31 |
|
| 2020 |
Jin X, Zhang YY, Pantelides ST, Du S. Integration of graphene and two-dimensional ferroelectrics: properties and related functional devices. Nanoscale Horizons. PMID 32613986 DOI: 10.1039/d0nh00255k |
0.654 |
|
| 2020 |
Ma RS, Ma J, Yan J, Wu L, Guo W, Wang S, Huan Q, Bao L, Pantelides ST, Gao HJ. Wrinkle-induced highly conductive channels in graphene on SiO/Si substrates. Nanoscale. PMID 32469037 DOI: 10.1039/D0Nr01406K |
0.541 |
|
| 2020 |
Qian K, Gao L, Chen X, Li H, Zhang S, Zhang XL, Zhu S, Yan J, Bao D, Cao L, Shi JA, Lu J, Liu C, Wang J, Qian T, ... ... Pantelides ST, et al. Air-Stable Monolayer Cu Se Exhibits a Purely Thermal Structural Phase Transition. Advanced Materials (Deerfield Beach, Fla.). e1908314. PMID 32239583 DOI: 10.1002/Adma.201908314 |
0.738 |
|
| 2020 |
Guo H, Zhang R, Li H, Wang X, Lu H, Qian K, Li G, Huang L, Lin X, Zhang YY, Ding H, Du S, Pantelides ST, Gao HJ. Sizable Band Gap in Epitaxial Bilayer Graphene Induced by Silicene Intercalation. Nano Letters. PMID 32125162 DOI: 10.1021/Acs.Nanolett.0C00306 |
0.747 |
|
| 2020 |
Zhou J, Lin J, Sims H, Jiang C, Cong C, Brehm JA, Zhang Z, Niu L, Chen Y, Zhou Y, Wang Y, Liu F, Zhu C, Yu T, Suenaga K, ... ... Pantelides ST, et al. Synthesis of Co-Doped MoS Monolayers with Enhanced Valley Splitting. Advanced Materials (Deerfield Beach, Fla.). e1906536. PMID 32027430 DOI: 10.1002/Adma.201906536 |
0.778 |
|
| 2020 |
Wu R, Bao DL, Yan L, Wang Y, Ren J, Zhang Y, Huan Q, Zhang YY, Du S, Pantelides ST, Gao HJ. Direct Visualization of Hydrogen-transfer Intermediate States by Scanning Tunneling Microscopy. The Journal of Physical Chemistry Letters. PMID 32011142 DOI: 10.1021/Acs.Jpclett.0C00046 |
0.735 |
|
| 2020 |
Toh CT, Zhang H, Lin J, Mayorov AS, Wang YP, Orofeo CM, Ferry DB, Andersen H, Kakenov N, Guo Z, Abidi IH, Sims H, Suenaga K, Pantelides ST, Özyilmaz B. Synthesis and properties of free-standing monolayer amorphous carbon. Nature. 577: 199-203. PMID 31915396 DOI: 10.1038/S41586-019-1871-2 |
0.754 |
|
| 2020 |
Tao L, Zhang Y, Pantelides ST, Du S. Tuning the Catalytic Activity of a Quantum Nutcracker for Hydrogen Dissociation Surfaces. 3: 40-47. DOI: 10.3390/surfaces3010004 |
0.503 |
|
| 2020 |
Ovchinnikov OS, O’Hara A, Jesse S, Hudak BM, Yang S, Lupini AR, Chisholm MF, Zhou W, Kalinin SV, Borisevich AY, Pantelides ST. Detection of defects in atomic-resolution images of materials using cycle analysis Advanced Structural and Chemical Imaging. 6: 1-9. DOI: 10.1186/S40679-020-00070-X |
0.579 |
|
| 2020 |
Bonaldo S, Putcha V, Linten D, Pantelides ST, Reed RA, Schrimpf RD, Fleetwood DM, Zhao SE, O'Hara A, Gorchichko M, Zhang EX, Gerardin S, Paccagnella A, Waldron N, Collaert N. Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics Ieee Transactions On Nuclear Science. 67: 210-220. DOI: 10.1109/Tns.2019.2957028 |
0.319 |
|
| 2020 |
Zhang R, Liu J, Zhang Y, Du S, Pantelides ST. Unusual anisotropic thermal expansion in multilayer SnSe leads to positive-to-negative crossover of Poisson's ratio Applied Physics Letters. 116: 83101. DOI: 10.1063/1.5142639 |
0.657 |
|
| 2020 |
Borisevich A, Vasudevan R, Zhou Y, Kelley K, Leonard D, Kouser S, Neumayer S, Maksymovych P, Pantelides S, May S, Balke N. Quantitative Aberration-Corrected STEM for Studies of Oxide Superlattices and Topological Defects in Layered Ferroelectrics Microscopy and Microanalysis. 1-3. DOI: 10.1017/S1431927620017298 |
0.532 |
|
| 2020 |
Feng T, O'Hara A, Pantelides ST. Quantum prediction of ultra-low thermal conductivity in lithium intercalation materials Nano Energy. 75: 104916. DOI: 10.1016/J.Nanoen.2020.104916 |
0.316 |
|
| 2020 |
Wu L, Shi J, Zhou Z, Yan J, Wang A, Bian C, Ma J, Ma R, Liu H, Chen J, Huang Y, Zhou W, Bao L, Ouyang M, Pantelides ST, et al. InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics Nano Research. 13: 1127-1132. DOI: 10.1007/S12274-020-2757-1 |
0.51 |
|
| 2020 |
Zhou Y, Kouser S, Borisevich AY, Pantelides ST, May SJ. Evidence for Interfacial Octahedral Coupling as a Route to Enhance Magnetoresistance in Perovskite Oxide Superlattices Advanced Materials Interfaces. 7: 1901576. DOI: 10.1002/Admi.201901576 |
0.51 |
|
| 2019 |
Meng M, Wang Z, Fathima A, Ghosh S, Saghayezhian M, Taylor J, Jin R, Zhu Y, Pantelides ST, Zhang J, Plummer EW, Guo H. Interface-induced magnetic polar metal phase in complex oxides. Nature Communications. 10: 5248. PMID 31748526 DOI: 10.1038/S41467-019-13270-7 |
0.312 |
|
| 2019 |
Brehm JA, Neumayer SM, Tao L, O'Hara A, Chyasnavichus M, Susner MA, McGuire MA, Kalinin SV, Jesse S, Ganesh P, Pantelides ST, Maksymovych P, Balke N. Tunable quadruple-well ferroelectric van der Waals crystals. Nature Materials. PMID 31740791 DOI: 10.1038/S41563-019-0532-Z |
0.344 |
|
| 2019 |
Dargusch M, Shi XL, Tran XQ, Feng T, Somidin F, Tan XF, Liu W, Jack KS, Venezuela J, Maeno H, Toriyama T, Matsumura S, Pantelides ST, Chen ZG. In-Situ Observation of the Continuous Phase Transition in Determining the High Thermoelectric Performance of Polycrystalline Sn0.98Se. The Journal of Physical Chemistry Letters. PMID 31597419 DOI: 10.1021/Acs.Jpclett.9B02818 |
0.302 |
|
| 2019 |
Chen H, Zhang XL, Zhang YY, Wang D, Bao DL, Que Y, Xiao W, Du S, Ouyang M, Pantelides ST, Gao HJ. Atomically precise, custom-design origami graphene nanostructures. Science (New York, N.Y.). 365: 1036-1040. PMID 31488691 DOI: 10.1126/Science.Aax7864 |
0.745 |
|
| 2019 |
Oyedele AD, Yang SZ, Feng T, Haglund AV, Gu Y, Puretzky AA, Briggs D, Rouleau CM, Chisholm MF, Unocic RR, Mandrus D, Meyer HM, Pantelides ST, Geohegan DB, Xiao K. Defect-mediated phase transformation in anisotropic 2D PdSe crystals for seamless electrical contacts. Journal of the American Chemical Society. PMID 31090414 DOI: 10.1021/Jacs.9B02593 |
0.327 |
|
| 2019 |
Saghayezhian M, Kouser S, Wang Z, Guo H, Jin R, Zhang J, Zhu Y, Pantelides ST, Plummer EW. Atomic-scale determination of spontaneous magnetic reversal in oxide heterostructures. Proceedings of the National Academy of Sciences of the United States of America. PMID 31068468 DOI: 10.1073/Pnas.1819570116 |
0.392 |
|
| 2019 |
Cheng Z, Bai T, Shi J, Feng T, Wang Y, Mecklenburg M, Li C, Hobart KD, Feygelson T, Tadjer MJ, Pate BB, Foley B, Yates L, Pantelides ST, Cola BA, et al. Tunable Thermal Energy Transport across Diamond Membranes and Diamond-Si Interfaces by Nanoscale Graphoepitaxy. Acs Applied Materials & Interfaces. PMID 31042348 DOI: 10.1021/Acsami.9B02234 |
0.321 |
|
| 2019 |
Liu ZL, Lei B, Zhu ZL, Tao L, Qi J, Bao DL, Wu X, Huang L, Zhang YY, Lin X, Wang Y, Du S, Pantelides ST, Gao H. Spontaneous Formation of 1D Pattern in Monolayer VSe2 with Dispersive Adsorption of Pt Atoms for HER Catalysis. Nano Letters. PMID 30973231 DOI: 10.1021/Acs.Nanolett.9B00889 |
0.73 |
|
| 2019 |
Yang SZ, Sun W, Zhang YY, Gong Y, Oxley MP, Lupini AR, Ajayan PM, Chisholm MF, Pantelides ST, Zhou W. Direct Cation Exchange in Monolayer MoS_{2} via Recombination-Enhanced Migration. Physical Review Letters. 122: 106101. PMID 30932633 DOI: 10.1103/Physrevlett.122.106101 |
0.628 |
|
| 2019 |
Hachtel JA, Cho SY, Davidson RB, Feldman MA, Chisholm MF, Haglund RF, Idrobo JC, Pantelides ST, Lawrie BJ. Spatially and spectrally resolved orbital angular momentum interactions in plasmonic vortex generators. Light, Science & Applications. 8: 33. PMID 30911382 DOI: 10.1038/S41377-019-0136-Z |
0.54 |
|
| 2019 |
Pantelides ST, Lang ND. First-principles calculation of transport properties of a molecular device Physical Review Letters. 84: 979-82. PMID 11017420 DOI: 10.1103/Physrevlett.84.979 |
0.318 |
|
| 2019 |
Wang P, Kalita H, Krishnaprasad A, Dev D, O'Hara A, Jiang R, Zhang E, Fleetwood DM, Schrimpf RD, Pantelides ST, Roy T. Total-Ionizing-Dose Response of MoS2 Transistors With ZrO2 and h-BN Gate Dielectrics Ieee Transactions On Nuclear Science. 66: 1584-1591. DOI: 10.1109/Tns.2018.2885751 |
0.332 |
|
| 2019 |
Wang P, Perini CJ, O'Hara A, Gong H, Wang P, Zhang EX, Mccurdy MW, Fleetwood DM, Schrimpf RD, Pantelides ST, Vogel EM. Total Ionizing Dose Effects and Proton-Induced Displacement Damage on MoS 2 -Interlayer-MoS 2 Tunneling Junctions Ieee Transactions On Nuclear Science. 66: 420-427. DOI: 10.1109/Tns.2018.2879632 |
0.339 |
|
| 2019 |
Fang J, Reaz M, Weeden-Wright SL, Schrimpf RD, Reed RA, Weller RA, Fischetti MV, Pantelides ST. Understanding the Average Electron–Hole Pair-Creation Energy in Silicon and Germanium Based on Full-Band Monte Carlo Simulations Ieee Transactions On Nuclear Science. 66: 444-451. DOI: 10.1109/Tns.2018.2879593 |
0.306 |
|
| 2019 |
Bonacum JP, O’Hara A, Bao D, Ovchinnikov OS, Zhang Y, Gordeev G, Arora S, Reich S, Idrobo J, Haglund RF, Pantelides ST, Bolotin KI. Atomic-resolution visualization and doping effects of complex structures in intercalated bilayer graphene Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.064004 |
0.604 |
|
| 2019 |
Neumayer SM, Eliseev EA, Susner MA, Tselev A, Rodriguez BJ, Brehm JA, Pantelides ST, Panchapakesan G, Jesse S, Kalinin SV, McGuire MA, Morozovska AN, Maksymovych P, Balke N. Giant negative electrostriction and dielectric tunability in a van der Waals layered ferroelectric Physical Review Materials. 3. DOI: 10.1103/Physrevmaterials.3.024401 |
0.327 |
|
| 2019 |
Sims H, Leonard DN, Birenbaum AY, Ge Z, Berlijn T, Li L, Cooper VR, Chisholm MF, Pantelides ST. Intrinsic interfacial van der Waals monolayers and their effect on the high-temperature superconductor
FeSe/SrTiO3 Physical Review B. 100. DOI: 10.1103/Physrevb.100.144103 |
0.742 |
|
| 2019 |
Tuttle BR, Summers T, Barger C, Noonan J, Pantelides ST. Theory of photo-ionization defects in nano-porous SiC alloys Journal of Applied Physics. 125: 215703. DOI: 10.1063/1.5094440 |
0.376 |
|
| 2019 |
Hudak BM, Sun W, Mackey J, Ullah A, Sehirlioglu A, Dynys F, Pantelides ST, Guiton BS. Observation of Square-Planar Distortion in Lanthanide-DopedSkutterudite Crystals Journal of Physical Chemistry C. 123: 14632-14638. DOI: 10.1021/Acs.Jpcc.9B02110 |
0.373 |
|
| 2019 |
Pantelides ST, Tsetseris L, Beck MJ, Rashkeev SN, Hadjisavvas G, Batyrev I, Tuttle B, Marinopoulos AG, Zhou X, Fleetwood DM, Schrimpf R. Performance, Reliability, Radiation Effects, and Aging Issues in Microelectronics - From Atomic-Scale Physics to Engineering-Level Modeling Ecs Transactions. 19: 319-337. DOI: 10.1016/J.Sse.2010.04.041 |
0.351 |
|
| 2019 |
Tao L, Guo W, Zhang Y, Zhang Y, Sun J, Du S, Pantelides ST. Quantum nutcracker for near-room-temperature H2 dissociation Chinese Science Bulletin. 64: 4-7. DOI: 10.1016/J.Scib.2018.11.005 |
0.634 |
|
| 2019 |
Gao C, Tao L, Zhang Y, Du S, Pantelides ST, Idrobo JC, Zhou W, Gao H. Spectroscopic signatures of edge states in hexagonal boron nitride Nano Research. 12: 1663-1667. DOI: 10.1007/S12274-019-2417-5 |
0.795 |
|
| 2019 |
Shi X, Wu A, Feng T, Zheng K, Liu W, Sun Q, Hong M, Pantelides ST, Chen Z, Zou J. High Thermoelectric Performance in p-type Polycrystalline Cd-doped SnSe Achieved by a Combination of Cation Vacancies and Localized Lattice Engineering Advanced Energy Materials. 9: 1803242. DOI: 10.1002/Aenm.201803242 |
0.329 |
|
| 2018 |
Tao L, Guo W, Zhang YY, Zhang YF, Sun J, Du S, Pantelides ST. Quantum nutcracker for near-room-temperature H dissociation. Science Bulletin. 64: 4-7. PMID 36659521 DOI: 10.1016/j.scib.2018.11.005 |
0.603 |
|
| 2018 |
Liu J, Lai CY, Zhang YY, Chiesa M, Pantelides ST. Water wettability of graphene: interplay between the interfacial water structure and the electronic structure. Rsc Advances. 8: 16918-16926. PMID 35540542 DOI: 10.1039/c8ra03509a |
0.574 |
|
| 2018 |
Hong M, Wang Y, Feng T, Sun Q, Xu S, Matsumura S, Pantelides ST, Zou J, Chen ZG. Strong Phonon-Phonon Interactions Securing Extraordinary Thermoelectric GeSbTe with Zn-Alloying Induced Band Alignment. Journal of the American Chemical Society. PMID 30592419 DOI: 10.1021/Jacs.8B12624 |
0.346 |
|
| 2018 |
Zhu J, Feng T, Mills S, Wang P, Wu X, Zhang L, Pantelides ST, Du X, Wang X. Record-Low and Anisotropic Thermal Conductivity of Quasi-1D Bulk ZrTe Single Crystal. Acs Applied Materials & Interfaces. PMID 30387354 DOI: 10.1021/Acsami.8B12504 |
0.3 |
|
| 2018 |
Li G, Zhang L, Xu W, Pan J, Song S, Zhang Y, Zhou H, Wang Y, Bao L, Zhang YY, Du S, Ouyang M, Pantelides ST, Gao HJ. Stable Silicene in Graphene/Silicene Van der Waals Heterostructures. Advanced Materials (Deerfield Beach, Fla.). e1804650. PMID 30368921 DOI: 10.1002/Adma.201804650 |
0.733 |
|
| 2018 |
Yang SZ, Gong Y, Manchanda P, Zhang YY, Ye G, Chen S, Song L, Pantelides ST, Ajayan PM, Chisholm MF, Zhou W. Rhenium-Doped and Stabilized MoS Atomic Layers with Basal-Plane Catalytic Activity. Advanced Materials (Deerfield Beach, Fla.). e1803477. PMID 30368920 DOI: 10.1002/Adma.201803477 |
0.567 |
|
| 2018 |
Liu J, Pantelides ST. Electrowetting on two-dimensional dielectrics: a quantum molecular dynamics investigation. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 30079895 DOI: 10.1088/1361-648X/Aad838 |
0.359 |
|
| 2018 |
Huo N, Yang Y, Wu YN, Zhang XG, Pantelides ST, Konstantatos G. High carrier mobility in monolayer CVD-grown MoS through phonon suppression. Nanoscale. PMID 30059107 DOI: 10.1039/C8Nr04416C |
0.308 |
|
| 2018 |
Balke N, Neumayer S, Brehm J, Susner M, Rodriguez BJ, Jesse S, Kalinin SV, Pantelides ST, McGuire MA, Maksymovych P. Locally controlled Cu-ion transport in layered ferroelectric CuInPS. Acs Applied Materials & Interfaces. PMID 30033718 DOI: 10.1021/Acsami.8B08079 |
0.334 |
|
| 2018 |
Xu B, Feng T, Li Z, Zhou L, Pantelides S, Wu Y. Creating Zipper-like van der Waals Gap Discontinuity in Low-Temperature-Processed Nanostructured PbBi2nTe1+3n for Enhanced Phonon Scattering and Improved Thermoelectric Performance. Angewandte Chemie (International Ed. in English). PMID 29949673 DOI: 10.1002/Anie.201805890 |
0.383 |
|
| 2018 |
Chen H, Bao DL, Wang D, Que Y, Xiao W, Qian G, Guo H, Sun J, Zhang YY, Du S, Pantelides ST, Gao HJ. Fabrication of Millimeter-Scale, Single-Crystal One-Third-Hydrogenated Graphene with Anisotropic Electronic Properties. Advanced Materials (Deerfield Beach, Fla.). e1801838. PMID 29938839 DOI: 10.1002/Adma.201801838 |
0.738 |
|
| 2018 |
Liu J, Pantelides ST. Mechanisms of Pyroelectricity in Three- and Two-Dimensional Materials. Physical Review Letters. 120: 207602. PMID 29864359 DOI: 10.1103/Physrevlett.120.207602 |
0.419 |
|
| 2018 |
Xu B, Feng T, Li Z, Pantelides ST, Wu Y. Constructing Highly Porous Thermoelectric Monoliths with High Performance and Improved Portability from Solution-Synthesized Shape-Controlled Nanocrystals. Nano Letters. PMID 29804458 DOI: 10.1021/Acs.Nanolett.8B01691 |
0.304 |
|
| 2018 |
Hudak BM, Song J, Sims H, Troparevsky MC, Humble TS, Pantelides ST, Snijders PC, Lupini AR. Directed Atom-by-Atom Assembly of Dopants in Silicon. Acs Nano. PMID 29750507 DOI: 10.1021/Acsnano.8B02001 |
0.75 |
|
| 2018 |
Zhou W, Zhang YY, Chen J, Li D, Zhou J, Liu Z, Chisholm MF, Pantelides ST, Loh KP. Dislocation-driven growth of two-dimensional lateral quantum-well superlattices. Science Advances. 4: eaap9096. PMID 29740600 DOI: 10.1017/S1431927618000934 |
0.568 |
|
| 2018 |
Idrobo JC, Lupini AR, Feng T, Unocic RR, Walden FS, Gardiner DS, Lovejoy TC, Dellby N, Pantelides ST, Krivanek OL. Temperature Measurement by a Nanoscale Electron Probe Using Energy Gain and Loss Spectroscopy. Physical Review Letters. 120: 095901. PMID 29547334 DOI: 10.1017/S1431927618000983 |
0.558 |
|
| 2018 |
Brehm J, Lin J, Zhou J, Sims H, Liu Z, Pantelides ST, Suenaga K. Electron beam-induced synthesis of hexagonal 1H-MoSe2 from square β-FeSe decorated with Mo adatoms. Nano Letters. PMID 29388778 DOI: 10.1021/Acs.Nanolett.7B05457 |
0.736 |
|
| 2018 |
Lin J, Zhou J, Zuluaga S, Peng Y, Gu M, Liu Z, Pantelides ST, Suenaga K. Anisotropic Ordering in 1T' Molybdenum and Tungsten Ditelluride Layers Alloyed with Sulphur and Selenium. Acs Nano. PMID 29294278 DOI: 10.1021/Acsnano.7B08782 |
0.311 |
|
| 2018 |
Tzitzios V, Dimos K, Alhassan SM, Mishra R, Kouloumpis A, Gournis D, Boukos N, Roldan MA, Idrobo J, Karakassides MA, Basina G, Alwahedi Y, Jin Kim H, Katsiotis MS, Fardis M, ... ... Pantelides ST, et al. Facile MoS2 Growth on Reduced Graphene-Oxide via Liquid Phase Method Frontiers in Materials. 5. DOI: 10.3389/Fmats.2018.00029 |
0.736 |
|
| 2018 |
Liang CD, Ma R, Su Y, O'Hara A, Zhang EX, Alles ML, Wang P, Zhao SE, Pantelides ST, Koester SJ, Schrimpf RD, Fleetwood DM. Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics Ieee Transactions On Nuclear Science. 65: 1227-1238. DOI: 10.1109/Tns.2018.2828080 |
0.302 |
|
| 2018 |
Wang P, Perini C, O'Hara A, Tuttle BR, Zhang EX, Gong H, Liang C, Jiang R, Liao W, Fleetwood DM, Schrimpf RD, Vogel EM, Pantelides ST. Radiation-Induced Charge Trapping and Low-Frequency Noise of Graphene Transistors Ieee Transactions On Nuclear Science. 65: 156-163. DOI: 10.1109/Tns.2017.2761747 |
0.311 |
|
| 2018 |
Jiang R, Shen X, Fang J, Wang P, Zhang EX, Chen J, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle EC, Speck JS, Pantelides ST. Multiple Defects Cause Degradation After High Field Stress in AlGaN/GaN HEMTs Ieee Transactions On Device and Materials Reliability. 18: 364-376. DOI: 10.1109/Tdmr.2018.2847338 |
0.483 |
|
| 2018 |
Liu J, Lai C, Zhang Y, Chiesa M, Pantelides ST. Water wettability of graphene: interplay between the interfacial water structure and the electronic structure Rsc Advances. 8: 16918-16926. DOI: 10.1039/C8Ra03509A |
0.549 |
|
| 2018 |
Bao D, Zhang Y, Du S, Pantelides ST, Gao H. Barrierless On-Surface Metal Incorporation in Phthalocyanine-Based Molecules Journal of Physical Chemistry C. 122: 6678-6683. DOI: 10.1021/Acs.Jpcc.8B00086 |
0.737 |
|
| 2018 |
Whelan J, Katsiotis MS, Stephen S, Luckachan GE, Tharalekshmy A, Banu ND, Idrobo J, Pantelides ST, Vladea RV, Banu I, Alhassan SM. Cobalt-Molybdenum Single-Layered Nanocatalysts Decorated on Carbon Nanotubes and the Influence of Preparation Conditions on Their Hydrodesulfurization Catalytic Activity Energy & Fuels. 32: 7820-7826. DOI: 10.1021/Acs.Energyfuels.8B01571 |
0.502 |
|
| 2018 |
Ovchinnikov OS, O’Hara A, Kalinin SV, Jesse S, Borisevich AY, Pantelides ST. Rapid Atomic-Resolution Image Analysis: Towards Near-Instant Feedback Microscopy and Microanalysis. 24: 538-539. DOI: 10.1017/S1431927618003185 |
0.532 |
|
| 2018 |
Lupini AR, Hudak BM, Song J, Sims H, Sharma Y, Ward TZ, Pantelides ST, Snijders PC. Direct Imaging of Low-Dimensional Nanostructures Microscopy and Microanalysis. 24: 90-91. DOI: 10.1017/S1431927618000946 |
0.693 |
|
| 2018 |
Cao Y, Qi J, Zhang Y, Huang L, Zheng Q, Lin X, Cheng Z, Zhang Y, Feng X, Du S, Pantelides ST, Gao H. Tuning the morphology of chevron-type graphene nanoribbons by choice of annealing temperature Nano Research. 11: 6190-6196. DOI: 10.1007/S12274-018-2136-3 |
0.745 |
|
| 2018 |
Chen H, Que Y, Tao L, Zhang Y, Lin X, Xiao W, Wang D, Du S, Pantelides ST, Gao H. Recovery of edge states of graphene nanoislands on an iridium substrate by silicon intercalation Nano Research. 11: 3722-3729. DOI: 10.1007/S12274-017-1940-5 |
0.734 |
|
| 2018 |
Sánchez-Santolino G, Salafranca J, Pantelides ST, Pennycook SJ, León C, Varela M. Localization of Yttrium Segregation within YSZ Grain Boundary Dislocation Cores Physica Status Solidi (a). 215: 1800349. DOI: 10.1002/Pssa.201800349 |
0.331 |
|
| 2017 |
Zuluaga S, Manchanda P, Zhang YY, Pantelides ST. Design of Optimally Stable Molecular Coatings for Fe-Based Nanoparticles in Aqueous Environments. Acs Omega. 2: 4480-4487. PMID 31457740 DOI: 10.1021/acsomega.7b00762 |
0.464 |
|
| 2017 |
Zhao X, Fu D, Ding Z, Zhang Y, Wan D, Tan SJR, Chen Z, Leng K, Dan J, Fu W, Geng D, Song P, Du Y, Venkatesan T, Pantelides ST, et al. Mo-terminated Edge Reconstructions in Nanoporous Molybdenum Disulfide Film. Nano Letters. PMID 29253330 DOI: 10.1021/Acs.Nanolett.7B04426 |
0.581 |
|
| 2017 |
Moon EJ, He Q, Ghosh S, Kirby BJ, Pantelides ST, Borisevich AY, May SJ. Structural "δ Doping" to Control Local Magnetization in Isovalent Oxide Heterostructures. Physical Review Letters. 119: 197204. PMID 29219521 DOI: 10.1103/Physrevlett.119.197204 |
0.603 |
|
| 2017 |
Ghosh S, Borisevich AY, Pantelides ST. Engineering an Insulating Ferroelectric Superlattice with a Tunable Band Gap from Metallic Components. Physical Review Letters. 119: 177603. PMID 29219470 DOI: 10.1103/Physrevlett.119.177603 |
0.535 |
|
| 2017 |
Song J, Hudak BM, Sims H, Sharma Y, Ward TZ, Pantelides ST, Lupini AR, Snijders PC. Homo-endotaxial one-dimensional Si nanostructures. Nanoscale. 10: 260-267. PMID 29210405 DOI: 10.1039/C7Nr06968E |
0.745 |
|
| 2017 |
Wu YN, Zhang XG, Pantelides ST. Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors. Physical Review Letters. 119: 105501. PMID 28949192 DOI: 10.1103/Physrevlett.119.105501 |
0.331 |
|
| 2017 |
Santana JA, Mishra R, Krogel JT, Borisevich AY, Kent PRC, Pantelides ST, Reboredo FA. Quantum many-body effects in defective transition-metal-oxide superlattices. Journal of Chemical Theory and Computation. PMID 28933845 DOI: 10.1021/Acs.Jctc.7B00483 |
0.684 |
|
| 2017 |
Ma R, Huan Q, Wu L, Yan J, Guo W, Zhang YY, Wang S, Bao L, Liu Y, Du SX, Pantelides ST, Gao HJ. Direct Four-probe Measurement of Grain-boundary Resistivity and Mobility in Millimeter-sized Graphene. Nano Letters. PMID 28786680 DOI: 10.1021/Acs.Nanolett.7B01624 |
0.731 |
|
| 2017 |
Lin J, Zuluaga S, Yu P, Liu Z, Pantelides ST, Suenaga K. Novel Pd_{2}Se_{3} Two-Dimensional Phase Driven by Interlayer Fusion in Layered PdSe_{2}. Physical Review Letters. 119: 016101. PMID 28731752 DOI: 10.1103/Physrevlett.119.016101 |
0.373 |
|
| 2017 |
Chen H, Pope T, Wu Z, Wang D, Tao L, Bao DL, Xiao W, Zhang JL, Zhang YY, Du SX, Gao S, Pantelides ST, Hofer WA, Gao HJ. Evidence for ultra-low-energy vibrations in large organic molecules. Nano Letters. PMID 28727436 DOI: 10.1021/Acs.Nanolett.7B01963 |
0.714 |
|
| 2017 |
Fu D, Zhao X, Zhang YY, Li L, Xu H, Jang AR, Yoon SI, Song P, Poh SM, Ren T, Ding Z, Fu W, Shin TJ, Shin HS, Pantelides ST, et al. Molecular Beam Epitaxy of Highly-Crystalline Monolayer Molybdenum Disulfide on Hexagonal Boron Nitride. Journal of the American Chemical Society. PMID 28633527 DOI: 10.1021/Jacs.7B05131 |
0.582 |
|
| 2017 |
Guo H, Wang Z, Dong S, Ghosh S, Saghayezhian M, Chen L, Weng Y, Herklotz A, Ward TZ, Jin R, Pantelides ST, Zhu Y, Zhang J, Plummer EW. Interface-induced multiferroism by design in complex oxide superlattices. Proceedings of the National Academy of Sciences of the United States of America. PMID 28607082 DOI: 10.1073/Pnas.1706814114 |
0.344 |
|
| 2017 |
Jang JH, Kim YM, He Q, Mishra R, Qiao L, Biegalski MD, Lupini AR, Pantelides ST, Pennycook SJ, Kalinin SV, Borisevich AY. In-Situ Observation of Oxygen Vacancy Dynamics and Ordering in the Epitaxial LaCoO3 System. Acs Nano. PMID 28602092 DOI: 10.1021/Acsnano.7B02188 |
0.679 |
|
| 2017 |
Huang L, Zhang YF, Zhang YY, Xu W, Que Y, Li E, Pan JB, Wang YL, Liu Y, Du SX, Pantelides ST, Gao HJ. Correction to Sequence of Silicon Monolayer Structures Grown on a Ru Surface: from a Herringbone Structure to Silicene. Nano Letters. PMID 28534626 DOI: 10.1021/Acs.Nanolett.7B02009 |
0.712 |
|
| 2017 |
Huang L, Zhang Y, Zhang YY, Xu W, Que Y, Li E, Pan J, Wang Y, Liu Y, Du S, Pantelides ST, Gao HJ. Sequence of Silicon Monolayer Structures Grown on a Ru Surface: from a Herringbone Structure to Silicene. Nano Letters. PMID 28098458 DOI: 10.1021/Acs.Nanolett.6B04804 |
0.748 |
|
| 2017 |
Tuttle BR, Held NJ, Lam LH, Zhang Y, Pantelides ST. Properties of Hydrogenated Nanoporous SiC: An Ab Initio Study Journal of Nanomaterials. 2017: 1-6. DOI: 10.1155/2017/4705734 |
0.567 |
|
| 2017 |
Jiang R, Zhang EX, McCurdy MW, Chen J, Shen X, Wang P, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle ECH, Speck JS, Pantelides ST. Worst-Case Bias for Proton and 10-keV X-Ray Irradiation of AlGaN/GaN HEMTs Ieee Transactions On Nuclear Science. 64: 218-225. DOI: 10.1109/Tns.2016.2626962 |
0.468 |
|
| 2017 |
Xu S, Shen X, Hallman KA, Haglund RF, Pantelides ST. Unified band-theoretic description of structural, electronic, and magnetic properties of vanadium dioxide phases Physical Review B. 95: 125105. DOI: 10.1103/Physrevb.95.125105 |
0.5 |
|
| 2017 |
Puzyrev YS, Shen X, Zhang CX, Hachtel J, Ni K, Choi BK, Zhang E-, Ovchinnikov O, Schrimpf RD, Fleetwood DM, Pantelides ST. Memristive devices from ZnO nanowire bundles and meshes Applied Physics Letters. 111: 153504. DOI: 10.1063/1.5008265 |
0.482 |
|
| 2017 |
O’Hara A, Kahn RE, Zhang Y, Pantelides ST. Defect-mediated leakage in lithium intercalated bilayer graphene Aip Advances. 7: 045205. DOI: 10.1063/1.4980052 |
0.595 |
|
| 2017 |
Yang S, Sun W, Zhang Y, Gong Y, Chisholm MF, Pantelides ST, Zhou W. Exchange of Re and Mo atoms in MoS2 driven by Scanning Transmission Electron Microscopy Microscopy and Microanalysis. 23: 1702-1703. DOI: 10.1017/S1431927617009175 |
0.58 |
|
| 2017 |
Yin K, Zhang Y, Zhou Y, Sun L, Chisholm MF, Pantelides ST, Zhou W. Formation of Single-atom-thick Copper Oxide Monolayers Microscopy and Microanalysis. 23: 1684-1685. DOI: 10.1017/S1431927617009084 |
0.55 |
|
| 2017 |
Ghosh S, Choquette A, May S, Oxley MP, Lupini AR, Pantelides ST, Borisevich AY. Identifying Novel Polar Distortion Modes in Engineered Magnetic Oxide Superlattices Microscopy and Microanalysis. 23: 1590-1591. DOI: 10.1017/S1431927617008613 |
0.494 |
|
| 2017 |
Sims H, Gao X, Lee S, Nichols JA, Meyer TL, Ward TZ, Pantelides ST, Chisholm MF, Lee HN. Oxide Epitaxy with Large Symmetry Mismatch: Bronze-phase VO2 on SrTiO3 Microscopy and Microanalysis. 23: 1580-1581. DOI: 10.1017/S143192761700856X |
0.704 |
|
| 2017 |
Sánchez-Santolino G, Roldan MA, Qiao Q, Begon-Lours L, Frechero MA, Salafranca J, Mishra R, Leon C, Pantelides ST, Pennycook SJ, Villegas JE, Santamaría J, Varela M. Atomic Resolution STEM-EELS Studies of Defects and Local Structural Distortions in Oxide Interfaces Microscopy and Microanalysis. 23: 372-373. DOI: 10.1017/S1431927617002549 |
0.56 |
|
| 2017 |
Tuttle BR, Pantelides ST. The properties of isolated dangling bonds on hydrogenated 2H-SiC surfaces Surface Science. 656: 109-114. DOI: 10.1016/J.Susc.2016.10.009 |
0.347 |
|
| 2017 |
Aldridge H, Lind AG, Bomberger CC, Puzyrev Y, Zide JMO, Pantelides ST, Law ME, Jones KS. N-type Doping Strategies for InGaAs Materials Science in Semiconductor Processing. 62: 171-179. DOI: 10.1016/J.Mssp.2016.12.017 |
0.31 |
|
| 2017 |
Zhang Y, Zhang Y, Li G, Lu J, Que Y, Chen H, Berger R, Feng X, Müllen K, Lin X, Zhang Y, Du S, Pantelides ST, Gao H. Sulfur-doped graphene nanoribbons with a sequence of distinct band gaps Nano Research. 10: 3377-3384. DOI: 10.1007/S12274-017-1550-2 |
0.736 |
|
| 2016 |
Zhou J, Liu F, Lin J, Huang X, Xia J, Zhang B, Zeng Q, Wang H, Zhu C, Niu L, Wang X, Fu W, Yu P, Chang TR, Hsu CH, ... ... Pantelides ST, et al. Large-Area and High-Quality 2D Transition Metal Telluride. Advanced Materials (Deerfield Beach, Fla.). PMID 27859781 DOI: 10.1002/Adma.201603471 |
0.331 |
|
| 2016 |
Gazquez J, Guzman R, Mishra R, Bartolomé E, Salafranca J, Magén C, Varela M, Coll M, Palau A, Valvidares SM, Gargiani P, Pellegrin E, Herrero-Martin J, Pennycook SJ, Pantelides ST, et al. Emerging Diluted Ferromagnetism in High-Tc Superconductors Driven by Point Defect Clusters. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 3: 1500295. PMID 27812469 DOI: 10.1002/Advs.201500295 |
0.55 |
|
| 2016 |
Wang G, Bao L, Pei T, Ma R, Zhang YY, Sun L, Zhang G, Yang H, Li J, Gu C, Du S, Pantelides ST, Schrimpf RD, Gao HJ. Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices. Nano Letters. PMID 27786486 DOI: 10.1021/Acs.Nanolett.6B02704 |
0.736 |
|
| 2016 |
Turo MJ, Shen X, Brandon NK, Castillo S, Fall AM, Pantelides ST, Macdonald JE. Dual-mode crystal-bound and X-type passivation of quantum dots. Chemical Communications (Cambridge, England). 52: 12214-12217. PMID 27711381 DOI: 10.1039/C6Cc05951A |
0.445 |
|
| 2016 |
Li X, Lin MW, Lin J, Huang B, Puretzky AA, Ma C, Wang K, Zhou W, Pantelides ST, Chi M, Kravchenko I, Fowlkes J, Rouleau CM, Geohegan DB, Xiao K. Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy. Science Advances. 2: e1501882. PMID 27152356 DOI: 10.1126/Sciadv.1501882 |
0.374 |
|
| 2016 |
Hachtel JA, Marvinney C, Mouti A, Mayo D, Mu R, Pennycook SJ, Lupini AR, Chisholm MF, Haglund RF, Pantelides ST. Probing plasmons in three dimensions by combining complementary spectroscopies in a scanning transmission electron microscope. Nanotechnology. 27: 155202. PMID 26934391 DOI: 10.1088/0957-4484/27/15/155202 |
0.317 |
|
| 2016 |
Kishida T, Kapetanakis MD, Yan J, Sales BC, Pantelides ST, Pennycook SJ, Chisholm MF. Magnetic Ordering in Sr3YCo4O10+x. Scientific Reports. 6: 19762. PMID 26818899 DOI: 10.1038/Srep19762 |
0.369 |
|
| 2016 |
Lin J, Zhang Y, Zhou W, Pantelides ST. Structural Flexibility and Alloying in Ultrathin Transition-metal Chalcogenide Nanowires. Acs Nano. PMID 26775676 DOI: 10.1021/Acsnano.5B07888 |
0.591 |
|
| 2016 |
Ye G, Gong Y, Lin J, Li B, He Y, Pantelides ST, Zhou W, Vajtai R, Ajayan PM. Defects Engineered Monolayer MoS2 for Improved Hydrogen Evolution Reaction. Nano Letters. PMID 26761422 DOI: 10.1021/Acs.Nanolett.5B04331 |
0.317 |
|
| 2016 |
Mukherjee S, Puzyrev Y, Chen J, Fleetwood DM, Schrimpf RD, Pantelides ST. Hot-Carrier Degradation in GaN HEMTs Due to Substitutional Iron and Its Complexes Ieee Transactions On Electron Devices. 63: 1486-1494. DOI: 10.1109/Ted.2016.2532806 |
0.364 |
|
| 2016 |
Chen J, Puzyrev YS, Zhang EX, Fleetwood DM, Schrimpf RD, Arehart AR, Ringel SA, Kaun SW, Kyle ECH, Speck JS, Saunier P, Lee C, Pantelides ST. High-Field Stress, Low-Frequency Noise, and Long-Term Reliability of AlGaN/GaN HEMTs Ieee Transactions On Device and Materials Reliability. 16: 282-289. DOI: 10.1109/Tdmr.2016.2581178 |
0.306 |
|
| 2016 |
Kapetanakis MD, Oxley MP, Zhou W, Pennycook SJ, Idrobo J, Pantelides ST. Signatures of distinct impurity configurations in atomic-resolution valence electron-energy-loss spectroscopy: Application to graphene Physical Review B. 94. DOI: 10.1103/Physrevb.94.155449 |
0.61 |
|
| 2016 |
Mishra R, Kim YM, He Q, Huang X, Kim SK, Susner MA, Bhattacharya A, Fong DD, Pantelides ST, Borisevich AY. Towards spin-polarized two-dimensional electron gas at a surface of an antiferromagnetic insulating oxide Physical Review B - Condensed Matter and Materials Physics. 94. DOI: 10.1103/Physrevb.94.045123 |
0.734 |
|
| 2016 |
Wu Y, Zhang X, Pantelides ST. First-principles calculations reveal controlling principles for carrier mobilities in semiconductors Semiconductor Science and Technology. 31: 115016. DOI: 10.1088/0268-1242/31/11/115016 |
0.35 |
|
| 2016 |
Li C, Zhang Y, Pennycook TJ, Wu Y, Lupini AR, Paudel N, Pantelides ST, Yan Y, Pennycook SJ. Column-by-column observation of dislocation motion in CdTe: Dynamic scanning transmission electron microscopy Applied Physics Letters. 109: 143107. DOI: 10.1063/1.4963765 |
0.71 |
|
| 2016 |
Shen X, Puzyrev YS, Combs C, Pantelides ST. Variability of structural and electronic properties of bulk and monolayer Si2Te3 Applied Physics Letters. 109. DOI: 10.1063/1.4962826 |
0.539 |
|
| 2016 |
Jiang R, Shen X, Chen J, Duan GX, Zhang EX, Fleetwood DM, Schrimpf RD, Kaun SW, Kyle ECH, Speck JS, Pantelides ST. Degradation and annealing effects caused by oxygen in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 109. DOI: 10.1063/1.4958706 |
0.539 |
|
| 2016 |
Pei T, Bao L, Wang G, Ma R, Yang H, Li J, Gu C, Pantelides S, Du S, Gao HJ. Few-layer SnSe2 transistors with high on/off ratios Applied Physics Letters. 108. DOI: 10.1063/1.4941394 |
0.642 |
|
| 2016 |
Leach ADP, Shen X, Faust A, Cleveland MC, La Croix AD, Banin U, Pantelides ST, Macdonald JE. Defect Luminescence from Wurtzite CuInS2 Nanocrystals: Combined Experimental and Theoretical Analysis Journal of Physical Chemistry C. 120: 5207-5212. DOI: 10.1021/Acs.Jpcc.6B00156 |
0.541 |
|
| 2016 |
Lin J, Zhang Y, Zhou W, Pantelides ST. Alloying in Flexible Transition-metal Chalcogenide Nanowires Microscopy and Microanalysis. 22: 1424-1425. DOI: 10.1017/S1431927616007960 |
0.517 |
|
| 2016 |
Oxley MP, Kapetanakis MD, Zhou W, Idrobo J, Pantelides ST. Low-Loss Imaging of Defect Structures in Two Dimensional Materials Using Aberration Corrected Scanning Transmission Electron Microscopy Microscopy and Microanalysis. 22: 1410-1411. DOI: 10.1017/S1431927616007893 |
0.558 |
|
| 2016 |
He Q, Ghosh S, Moon EJ, May SJ, Lupini AR, Pantelides ST, Borisevich AY. Tracking BO
6
Coupling in Perovskite Superlattices to Engineer Magnetic Interface Behavior Microscopy and Microanalysis. 22: 904-905. DOI: 10.1017/S1431927616005365 |
0.494 |
|
| 2016 |
Zhou W, Lupini AR, Lin J, Gong Y, Liu Z, Kapetanakis MD, Oxley MP, Idrobo J, Pennycook SJ, Pantelides ST, Ajayan PM. Single Atom Imaging and Spectroscopy of Impurities in 2D Materials Microscopy and Microanalysis. 22: 862-863. DOI: 10.1017/S1431927616005158 |
0.544 |
|
| 2016 |
Shen X, Pennycook TJ, Hernandez-Martin D, Pérez A, Puzyrev YS, Liu Y, te Velthuis SGE, Freeland JW, Shafer P, Zhu C, Varela M, Leon C, Sefrioui Z, Santamaria J, Pantelides ST. High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201600086 |
0.694 |
|
| 2016 |
Zheng W, Lin J, Feng W, Xiao K, Qiu Y, Chen XS, Liu G, Cao W, Pantelides ST, Zhou W, Hu PA. Patterned Growth of P-Type MoS2 Atomic Layers Using Sol–Gel as Precursor Advanced Functional Materials. 26: 6371-6379. DOI: 10.1002/Adfm.201602494 |
0.361 |
|
| 2016 |
Gong Y, Ye G, Lei S, Shi G, He Y, Lin J, Zhang X, Vajtai R, Pantelides ST, Zhou W, Li B, Ajayan PM. Synthesis of Millimeter-Scale Transition Metal Dichalcogenides Single Crystals Advanced Functional Materials. 26: 2009-2015. DOI: 10.1002/Adfm.201504633 |
0.327 |
|
| 2015 |
Zhou W, Yin K, Wang C, Zhang Y, Xu T, Borisevich A, Sun L, Idrobo JC, Chisholm MF, Pantelides ST, Klie RF, Lupini AR. The observation of square ice in graphene questioned. Nature. 528: E1-2. PMID 26701058 DOI: 10.1038/Nature16145 |
0.707 |
|
| 2015 |
Puzyrev YS, Shen X, Pantelides ST. Prediction of Giant Thermoelectric Efficiency in Crystals with Interlaced Nanostructure. Nano Letters. PMID 26691292 DOI: 10.1021/Acs.Nanolett.5B03220 |
0.508 |
|
| 2015 |
Frechero MA, Rocci M, Sánchez-Santolino G, Kumar A, Salafranca J, Schmidt R, Díaz-Guillén MR, Durá OJ, Rivera-Calzada A, Mishra R, Jesse S, Pantelides ST, Kalinin SV, Varela M, Pennycook SJ, et al. Paving the way to nanoionics: atomic origin of barriers for ionic transport through interfaces. Scientific Reports. 5: 17229. PMID 26673351 DOI: 10.1038/Srep17229 |
0.561 |
|
| 2015 |
Pennycook SJ, Zhou W, Pantelides ST. Watching Atoms Work: Nanocluster Structure and Dynamics. Acs Nano. PMID 26407002 DOI: 10.1021/Acsnano.5B05510 |
0.344 |
|
| 2015 |
Pan L, Que Y, Chen H, Wang D, Li J, Shen C, Xiao W, Du S, Gao H, Pantelides ST. Room-temperature, low-barrier boron doping of graphene. Nano Letters. PMID 26348981 DOI: 10.1021/Acs.Nanolett.5B01839 |
0.668 |
|
| 2015 |
Lu X, Utama MI, Lin J, Luo X, Zhao Y, Zhang J, Pantelides ST, Zhou W, Quek SY, Xiong Q. Rapid and Nondestructive Identification of Polytypism and Stacking Sequences in Few-Layer Molybdenum Diselenide by Raman Spectroscopy. Advanced Materials (Deerfield Beach, Fla.). PMID 26134241 DOI: 10.1002/Adma.201501086 |
0.314 |
|
| 2015 |
Wang Y, Li L, Yao W, Song S, Sun JT, Pan J, Ren X, Li C, Okunishi E, Wang YQ, Wang E, Shao Y, Zhang YY, Yang HT, Schwier EF, ... ... Pantelides ST, et al. Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt. Nano Letters. 15: 4013-8. PMID 25996311 DOI: 10.1021/Acs.Nanolett.5B00964 |
0.689 |
|
| 2015 |
Lin J, Pantelides ST, Zhou W. Vacancy-induced formation and growth of inversion domains in transition-metal dichalcogenide monolayer. Acs Nano. 9: 5189-97. PMID 25905570 DOI: 10.1021/Acsnano.5B00554 |
0.368 |
|
| 2015 |
Schrimpf RD, Fleetwood DM, Pantelides ST, Puzyrev YS, Mukherjee S, Reed RA, Speck JS, Mishra UK. Physical Mechanisms Affecting the Reliability of GaN-based High Electron Mobility Transistors Mrs Proceedings. 1792. DOI: 10.1557/Opl.2015.475 |
0.311 |
|
| 2015 |
Chen J, Puzyrev YS, Jiang R, Zhang EX, McCurdy MW, Fleetwood DM, Schrimpf RD, Pantelides ST, Arehart AR, Ringel SA, Saunier P, Lee C. Effects of Applied Bias and High Field Stress on the Radiation Response of GaN/AlGaN HEMTs Ieee Transactions On Nuclear Science. 62: 2423-2430. DOI: 10.1109/Tns.2015.2488650 |
0.323 |
|
| 2015 |
Shen X, Puzyrev YS, Fleetwood DM, Schrimpf RD, Pantelides ST. Quantum mechanical modeling of radiation-induced defect dynamics in electronic devices Ieee Transactions On Nuclear Science. 62: 2169-2180. DOI: 10.1109/Tns.2015.2470665 |
0.528 |
|
| 2015 |
Duan GX, Hatchtel J, Shen X, Zhang EX, Zhang CX, Tuttle BR, Fleetwood DM, Schrimpf RD, Reed RA, Franco J, Linten D, Mitard J, Witters L, Collaert N, Chisholm MF, ... Pantelides ST, et al. Activation Energies for Oxide- and Interface-Trap Charge Generation Due to Negative-Bias Temperature Stress of Si-Capped SiGe-pMOSFETs Ieee Transactions On Device and Materials Reliability. 15: 352-358. DOI: 10.1109/Tdmr.2015.2442152 |
0.546 |
|
| 2015 |
Tuttle BR, Alhassan SM, Pantelides ST. Large excitonic effects in group-IV sulfide monolayers Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.235405 |
0.361 |
|
| 2015 |
Barmparis GD, Puzyrev YS, Zhang X-, Pantelides ST. Theory of inelastic multiphonon scattering and carrier capture by defects in semiconductors: Application to capture cross sections Physical Review B. 92: 214111. DOI: 10.1103/Physrevb.92.214111 |
0.777 |
|
| 2015 |
Pan J, Du S, Zhang Y, Pan L, Gao HJ, Pantelides ST. Ferromagnetism and perfect spin filtering in transition-metal-doped graphyne nanoribbons Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.205429 |
0.695 |
|
| 2015 |
Kapetanakis MD, Zhou W, Oxley MP, Lee J, Prange MP, Pennycook SJ, Idrobo JC, Pantelides ST. Low-loss electron energy loss spectroscopy: An atomic-resolution complement to optical spectroscopies and application to graphene Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/Physrevb.92.125147 |
0.6 |
|
| 2015 |
Qiao Q, Zhang Y, Contreras-Guerrero R, Droopad R, Pantelides ST, Pennycook SJ, Ogut S, Klie RF. Direct observation of oxygen-vacancy-enhanced polarization in a SrTiO3-buffered ferroelectric BaTiO3 film on GaAs Applied Physics Letters. 107. DOI: 10.1063/1.4936159 |
0.582 |
|
| 2015 |
Hachtel JA, Sachan R, Mishra R, Pantelides ST. Quantitative first-principles theory of interface absorption in multilayer heterostructures Applied Physics Letters. 107. DOI: 10.1063/1.4930069 |
0.565 |
|
| 2015 |
Shen X, Dhar S, Pantelides ST. Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices Applied Physics Letters. 106. DOI: 10.1063/1.4917528 |
0.562 |
|
| 2015 |
Puzyrev YS, Schrimpf RD, Fleetwood DM, Pantelides ST. Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors Applied Physics Letters. 106. DOI: 10.1063/1.4907675 |
0.337 |
|
| 2015 |
Jang JH, Mishra R, Kim Y, He Q, Lee J, Yoon M, Pantelides S, Borisevich A. Phase Transformations and Surface/Interface Properties in Functional Perovskites with Aberration-Corrected STEM/EELS Microscopy and Microanalysis. 21: 2429-2430. DOI: 10.1017/S1431927615012921 |
0.608 |
|
| 2015 |
Pantelides ST, Pennycook SJ. Probing Complex Nanostructures by Combining Atomic-Scale Theory and Scanning Transmission Electron Microscopy Microscopy and Microanalysis. 21: 2199-2200. DOI: 10.1017/S1431927615011770 |
0.332 |
|
| 2015 |
Chisholm MF, Lee J, Guo J, Yang Z, Pennycook SJ, Pantelides ST, Zhou W. Functionalization of Graphene Microscopy and Microanalysis. 21: 737-738. DOI: 10.1017/S1431927615004481 |
0.404 |
|
| 2015 |
Lin J, Zhang Y, Pantelides ST, Zhou W. Defect Dynamics in 2D Transition Metal Dichalcogenide Monolayers Microscopy and Microanalysis. 21: 433-434. DOI: 10.1017/S1431927615002962 |
0.527 |
|
| 2015 |
Shen X, Yin K, Puzyrev YS, Liu Y, Sun L, Li R, Pantelides ST. 2D Nanovaristors at Grain Boundaries Account for Memristive Switching in Polycrystalline BiFeO3 Advanced Electronic Materials. 1: 1500019. DOI: 10.1002/Aelm.201500019 |
0.511 |
|
| 2015 |
Zhang YY, Mishra R, Pennycook TJ, Borisevich AY, Pennycook SJ, Pantelides ST. Oxygen Disorder, a Way to Accommodate Large Epitaxial Strains in Oxides Advanced Materials Interfaces. 2. DOI: 10.1002/Admi.201500344 |
0.778 |
|
| 2014 |
Shen X, Hernández-Pagan EA, Zhou W, Puzyrev YS, Idrobo JC, Macdonald JE, Pennycook SJ, Pantelides ST. Interlaced crystals having a perfect Bravais lattice and complex chemical order revealed by real-space crystallography. Nature Communications. 5: 5431. PMID 25394496 DOI: 10.1038/Ncomms6431 |
0.646 |
|
| 2014 |
Guo J, Lee J, Contescu CI, Gallego NC, Pantelides ST, Pennycook SJ, Moyer BA, Chisholm MF. Crown ethers in graphene. Nature Communications. 5: 5389. PMID 25391367 DOI: 10.1038/Ncomms6389 |
0.343 |
|
| 2014 |
Ishikawa R, Mishra R, Lupini AR, Findlay SD, Taniguchi T, Pantelides ST, Pennycook SJ. Direct observation of dopant atom diffusion in a bulk semiconductor crystal enhanced by a large size mismatch. Physical Review Letters. 113: 155501. PMID 25375721 DOI: 10.1103/Physrevlett.113.155501 |
0.589 |
|
| 2014 |
Klots AR, Newaz AK, Wang B, Prasai D, Krzyzanowska H, Lin J, Caudel D, Ghimire NJ, Yan J, Ivanov BL, Velizhanin KA, Burger A, Mandrus DG, Tolk NH, Pantelides ST, et al. Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy. Scientific Reports. 4: 6608. PMID 25318849 DOI: 10.1038/Srep06608 |
0.38 |
|
| 2014 |
Gong Y, Lin J, Wang X, Shi G, Lei S, Lin Z, Zou X, Ye G, Vajtai R, Yakobson BI, Terrones H, Terrones M, Tay BK, Lou J, Pantelides ST, et al. Vertical and in-plane heterostructures from WS2/MoS2 monolayers. Nature Materials. 13: 1135-42. PMID 25262094 DOI: 10.1038/Nmat4091 |
0.368 |
|
| 2014 |
Kim YM, Morozovska A, Eliseev E, Oxley MP, Mishra R, Selbach SM, Grande T, Pantelides ST, Kalinin SV, Borisevich AY. Direct observation of ferroelectric field effect and vacancy-controlled screening at the BiFeO3/LaxSr1-xMnO3 interface. Nature Materials. 13: 1019-25. PMID 25129618 DOI: 10.1038/Nmat4058 |
0.693 |
|
| 2014 |
Yang Z, Yin L, Lee J, Ren W, Cheng HM, Ye H, Pantelides ST, Pennycook SJ, Chisholm MF. Direct observation of atomic dynamics and silicon doping at a topological defect in graphene. Angewandte Chemie (International Ed. in English). 53: 8908-12. PMID 24981312 DOI: 10.1002/Anie.201403382 |
0.386 |
|
| 2014 |
Ren J, Guo H, Pan J, Zhang YY, Wu X, Luo HG, Du S, Pantelides ST, Gao HJ. Kondo effect of cobalt adatoms on a graphene monolayer controlled by substrate-induced ripples. Nano Letters. 14: 4011-5. PMID 24905855 DOI: 10.1021/Nl501425N |
0.741 |
|
| 2014 |
Nelson FJ, Idrobo JC, Fite JD, Mišković ZL, Pennycook SJ, Pantelides ST, Lee JU, Diebold AC. Electronic excitations in graphene in the 1-50 eV range: the π and π + σ peaks are not plasmons. Nano Letters. 14: 3827-31. PMID 24884760 DOI: 10.1021/Nl500969T |
0.569 |
|
| 2014 |
Lee J, Yang Z, Zhou W, Pennycook SJ, Pantelides ST, Chisholm MF. Stabilization of graphene nanopore. Proceedings of the National Academy of Sciences of the United States of America. 111: 7522-6. PMID 24821802 DOI: 10.1073/Pnas.1400767111 |
0.37 |
|
| 2014 |
Lin J, Cretu O, Zhou W, Suenaga K, Prasai D, Bolotin KI, Cuong NT, Otani M, Okada S, Lupini AR, Idrobo JC, Caudel D, Burger A, Ghimire NJ, Yan J, ... ... Pantelides ST, et al. Flexible metallic nanowires with self-adaptive contacts to semiconducting transition-metal dichalcogenide monolayers. Nature Nanotechnology. 9: 436-42. PMID 24776648 DOI: 10.1017/S1431927614010538 |
0.575 |
|
| 2014 |
Mishra R, Kim YM, Salafranca J, Kim SK, Chang SH, Bhattacharya A, Fong DD, Pennycook SJ, Pantelides ST, Borisevich AY. Oxygen-vacancy-induced polar behavior in (LaFeO3)2/(SrFeO3) superlattices. Nano Letters. 14: 2694-701. PMID 24734897 DOI: 10.1021/Nl500601D |
0.67 |
|
| 2014 |
Oxley MP, Kapetanakis MD, Prange MP, Varela M, Pennycook SJ, Pantelides ST. Simulation of probe position-dependent electron energy-loss fine structure. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 20: 784-97. PMID 24685384 DOI: 10.1017/S1431927614000610 |
0.357 |
|
| 2014 |
Lu X, Utama MI, Lin J, Gong X, Zhang J, Zhao Y, Pantelides ST, Wang J, Dong Z, Liu Z, Zhou W, Xiong Q. Large-area synthesis of monolayer and few-layer MoSe2 films on SiO2 substrates. Nano Letters. 14: 2419-25. PMID 24678857 DOI: 10.1021/Nl5000906 |
0.322 |
|
| 2014 |
Appavoo K, Wang B, Brady NF, Seo M, Nag J, Prasankumar RP, Hilton DJ, Pantelides ST, Haglund RF. Ultrafast phase transition via catastrophic phonon collapse driven by plasmonic hot-electron injection. Nano Letters. 14: 1127-33. PMID 24484272 DOI: 10.1021/Nl4044828 |
0.389 |
|
| 2014 |
Gong Y, Liu Z, Lupini AR, Shi G, Lin J, Najmaei S, Lin Z, Elías AL, Berkdemir A, You G, Terrones H, Terrones M, Vajtai R, Pantelides ST, Pennycook SJ, et al. Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide. Nano Letters. 14: 442-9. PMID 24368045 DOI: 10.1021/Nl4032296 |
0.344 |
|
| 2014 |
Zhang CX, Wang B, Duan GX, Zhang EX, Fleetwood DM, Alles ML, Schrimpf RD, Rooney AP, Khestanova E, Auton G, Gorbachev RV, Haigh SJ, Pantelides ST. Total Ionizing Dose Effects on hBN Encapsulated Graphene Devices Ieee Transactions On Nuclear Science. 61: 2868-2873. DOI: 10.1109/Tns.2014.2367036 |
0.384 |
|
| 2014 |
Zhang CX, Newaz AKM, Wang B, Zhang EX, Duan GX, Fleetwood DM, Alles ML, Schrimpf RD, Bolotin KI, Pantelides ST. Electrical stress and total ionizing dose effects on {\hbox {MoS}}2 transistors Ieee Transactions On Nuclear Science. 61: 2862-2867. DOI: 10.1109/Tns.2014.2365522 |
0.369 |
|
| 2014 |
Duan GX, Zhang CX, Zhang EX, Hachtel J, Fleetwood DM, Schrimpf RD, Reed RA, Alles ML, Pantelides ST, Bersuker G, Young CD. Bias dependence of total ionizing dose effects in SiGe-SiO2HfO2 p MOS FinFETs Ieee Transactions On Nuclear Science. 61: 2834-2838. DOI: 10.1109/Tns.2014.2362918 |
0.302 |
|
| 2014 |
Puzyrev Y, Paccagnella A, Pantelides ST, Mukherjee S, Chen J, Roy T, Silvestri M, Schrimpf RD, Fleetwood DM, Singh J, Hinckley JM. Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs Ieee Transactions On Electron Devices. 61: 1316-1320. DOI: 10.1109/Ted.2014.2309278 |
0.358 |
|
| 2014 |
Biškup N, Salafranca J, Mehta V, Oxley MP, Suzuki Y, Pennycook SJ, Pantelides ST, Varela M. Insulating ferromagnetic LaCoO3-δ films: A phase induced by ordering of oxygen vacancies Physical Review Letters. 112. DOI: 10.1103/Physrevlett.112.087202 |
0.355 |
|
| 2014 |
Tsetseris L, Wang B, Pantelides ST. Substitutional doping of graphene: The role of carbon divacancies Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/Physrevb.89.035411 |
0.433 |
|
| 2014 |
Wang B, Alhassan SM, Pantelides ST. Formation of Large Polysulfide Complexes during the Lithium-Sulfur Battery Discharge Physical Review Applied. 2. DOI: 10.1103/Physrevapplied.2.034004 |
0.388 |
|
| 2014 |
Warnick KH, Wang B, Pantelides ST. Hydrogen dynamics and metallic phase stabilization in VO2 Applied Physics Letters. 104. DOI: 10.1063/1.4868541 |
0.785 |
|
| 2014 |
Laskar MR, Nath DN, Ma L, Lee EW, Lee CH, Kent T, Yang Z, Mishra R, Roldan MA, Idrobo JC, Pantelides ST, Pennycook SJ, Myers RC, Wu Y, Rajan S. P-type doping of MoS2 thin films using Nb Applied Physics Letters. 104. DOI: 10.1063/1.4867197 |
0.675 |
|
| 2014 |
Xu Y, Zhu X, Lee HD, Xu C, Shubeita SM, Ahyi AC, Sharma Y, Williams JR, Lu W, Ceesay S, Tuttle BR, Wan A, Pantelides ST, Gustafsson T, Garfunkel EL, et al. Atomic state and characterization of nitrogen at the SiC/SiO2 interface Journal of Applied Physics. 115. DOI: 10.1063/1.4861626 |
0.361 |
|
| 2014 |
Varela M, Salafranca J, Biskup N, Gazquez J, Oxley MP, Mehta V, Suzuki Y, Bose S, Sharma M, Leighton C, Luo W, Pantelides ST, Pennycook SJ. Oxygen Vacancy Ordering: a Degree of Freedom that can Control the Structural, Electronic and Magnetic Properties of Transition-Metal Oxide Films Microscopy and Microanalysis. 20: 556-557. DOI: 10.1017/S1431927614004504 |
0.31 |
|
| 2014 |
Hyuck Jang J, Kim YM, He Q, Mishra R, Qiao L, Biegalski MD, Lupini AR, Pantelides ST, Pennycook SJ, Kalinin SV, Borisevich AY. Studying dynamics of oxygen vacancy ordering in epitaxial LaCoO3 / SrTiO3 superlattice with real-time observation Microscopy and Microanalysis. 20: 422-423. DOI: 10.1017/S1431927614003833 |
0.639 |
|
| 2014 |
Qiao Q, Mirtchev P, Zhang Y, Roldan MA, Varela M, Pantelides ST, Perovic DD, Ozin G, Pennycook SJ. Atomic and electronic structure of γfe2O3/Cu2O heterostructured nanocrystals Microscopy and Microanalysis. 20: 410-411. DOI: 10.1017/S1431927614003778 |
0.59 |
|
| 2014 |
Idrobo JC, Zhou W, Kapetanakis M, Prange MP, Basile L, Pantelides ST, Pennycook SJ. Atomic imaging and spectroscopy of two-dimensional materials Microscopy and Microanalysis. 20: 92-93. DOI: 10.1017/S1431927614002189 |
0.542 |
|
| 2014 |
Oxley MP, Kapatenakis MD, Prange MP, Zhou W, Idrobo JC, Pennycook SJ, Pantelides ST. Inelastic STEM imaging based on low-loss spectroscopy Microscopy and Microanalysis. 20: 90-91. DOI: 10.1017/S1431927614002177 |
0.493 |
|
| 2014 |
Pennycook SJ, Ishikawa R, Lupini AR, Findlay SD, Mishra R, Pantelides ST. Tracking Dopant Diffusion Pathways inside Bulk Materials Microscopy and Microanalysis. 20: 50-51. DOI: 10.1017/S1431927614001974 |
0.5 |
|
| 2014 |
Tsetseris L, Pantelides ST. Graphene: An impermeable or selectively permeable membrane for atomic species? Carbon. 67: 58-63. DOI: 10.1016/J.Carbon.2013.09.055 |
0.376 |
|
| 2014 |
Biegalski MD, Takamura Y, Mehta A, Gai Z, Kalinin SV, Ambaye H, Lauter V, Fong D, Pantelides ST, Kim YM, He J, Borisevich A, Siemons W, Christen HM. Interrelation between Structure - Magnetic Properties in La0.5Sr0.5CoO3 Advanced Materials Interfaces. 1. DOI: 10.1002/Admi.201400203 |
0.535 |
|
| 2013 |
Shen X, Pantelides ST. Atomic-Scale Mechanism of Efficient Hydrogen Evolution at SiC Nanocrystal Electrodes. The Journal of Physical Chemistry Letters. 4: 100-4. PMID 26291219 DOI: 10.1021/Jz301799W |
0.511 |
|
| 2013 |
Lin J, He W, Vilayurganapathy S, Peppernick SJ, Wang B, Palepu S, Remec M, Hess WP, Hmelo AB, Pantelides ST, Dickerson JH. Growth of Solid and Hollow Gold Particles through the Thermal Annealing of Nanoscale Patterned Thin Films. Acs Applied Materials & Interfaces. 5: 11590-6. PMID 24144267 DOI: 10.1021/Am402633U |
0.333 |
|
| 2013 |
Jarrahi Z, Cao Y, Hong T, Puzyrev YS, Wang B, Lin J, Huffstutter AH, Pantelides ST, Xu YQ. Enhanced photoresponse in curled graphene ribbons. Nanoscale. 5: 12206-11. PMID 24131998 DOI: 10.1039/C3Nr03988A |
0.386 |
|
| 2013 |
Conley HJ, Wang B, Ziegler JI, Haglund RF, Pantelides ST, Bolotin KI. Bandgap engineering of strained monolayer and bilayer MoS2. Nano Letters. 13: 3626-30. PMID 23819588 DOI: 10.1021/Nl4014748 |
0.332 |
|
| 2013 |
Lin J, Fang W, Zhou W, Lupini AR, Idrobo JC, Kong J, Pennycook SJ, Pantelides ST. AC/AB stacking boundaries in bilayer graphene. Nano Letters. 13: 3262-8. PMID 23772750 DOI: 10.1021/Nl4013979 |
0.572 |
|
| 2013 |
Lee J, Zhou W, Pennycook SJ, Idrobo JC, Pantelides ST. Direct visualization of reversible dynamics in a Si₆ cluster embedded in a graphene pore. Nature Communications. 4: 1650. PMID 23552065 DOI: 10.1038/Ncomms2671 |
0.572 |
|
| 2013 |
Warnick KH, Wang B, Cliffel DE, Wright DW, Haglund RF, Pantelides ST. Room-temperature reactions for self-cleaning molecular nanosensors. Nano Letters. 13: 798-802. PMID 23320817 DOI: 10.1021/Nl304598P |
0.773 |
|
| 2013 |
Shen X, Puzyrev YS, Pantelides ST. Vacancy breathing by grain boundaries - A mechanism of memristive switching in polycrystalline oxides Mrs Communications. 3: 167-170. DOI: 10.1557/Mrc.2013.32 |
0.473 |
|
| 2013 |
Chen J, Puzyrev YS, Zhang CX, Zhang EX, McCurdy MW, Fleetwood DM, Schrimpf RD, Pantelides ST, Kaun SW, Kyle ECH, Speck JS. Proton-induced dehydrogenation of defects in AlGaN/GaN HEMTs Ieee Transactions On Nuclear Science. 60: 4080-4086. DOI: 10.1109/Tns.2013.2281771 |
0.313 |
|
| 2013 |
Zhang CX, Shen X, Zhang EX, Fleetwood DM, Schrimpf RD, Francis SA, Roy T, Dhar S, Ryu SH, Pantelides ST. Temperature dependence and postirradiation annealing response of the 1/f noise of 4H-SiC MOSFETs Ieee Transactions On Electron Devices. 60: 2361-2367. DOI: 10.1109/Ted.2013.2263426 |
0.466 |
|
| 2013 |
Zhang CX, Zhang EX, Fleetwood DM, Schrimpf RD, Dhar S, Ryu S, Shen X, Pantelides ST. Origins of Low-Frequency Noise and Interface Traps in 4H-SiC MOSFETs Ieee Electron Device Letters. 34: 117-119. DOI: 10.1109/Led.2012.2228161 |
0.485 |
|
| 2013 |
Mishra R, Zhou W, Pennycook SJ, Pantelides ST, Idrobo JC. Long-range ferromagnetic ordering in manganese-doped two-dimensional dichalcogenides Physical Review B - Condensed Matter and Materials Physics. 88. DOI: 10.1103/Physrevb.88.144409 |
0.671 |
|
| 2013 |
Tuttle BR, Aichinger T, Lenahan PM, Pantelides ST. Theory of hyperfine active nitrogen complexes observed in 4H-SiC diodes Journal of Applied Physics. 114. DOI: 10.1063/1.4821799 |
0.321 |
|
| 2013 |
Shen X, Tuttle BR, Pantelides ST. Competing atomic and molecular mechanisms of thermal oxidation-SiC versus Si Journal of Applied Physics. 114. DOI: 10.1063/1.4815962 |
0.515 |
|
| 2013 |
Steel FM, Tuttle BR, Shen X, Pantelides ST. Effects of strain on the electrical properties of silicon carbide Journal of Applied Physics. 114. DOI: 10.1063/1.4812574 |
0.466 |
|
| 2013 |
Tuttle BR, Shen X, Pantelides ST. Theory of near-interface trap quenching by impurities in SiC-based metal-oxide-semiconductor devices Applied Physics Letters. 102. DOI: 10.1063/1.4798536 |
0.541 |
|
| 2013 |
Wang B, Tsetseris L, Pantelides ST. Introduction of nitrogen with controllable configuration into graphene via vacancies and edges Journal of Materials Chemistry A. 1: 14927-14934. DOI: 10.1039/C3Ta13610H |
0.409 |
|
| 2013 |
Lin J, Zhou W, Fang W, Kong J, Lupini A, Idrobo J, Pennycook S, Pantelides S. AB/AC Stacking Boundaries in Bilayer Graphene Microscopy and Microanalysis. 19: 1942-1943. DOI: 10.1017/S1431927613011707 |
0.471 |
|
| 2013 |
Jang J, Kim Y, Mishra R, Qiao L, Biegalski M, Gai Z, Lupini A, Pantelides S, Pennycook S, Borisevich A. Interplay of Octahedral Rotations, Magnetic and Electronic Properties in Epitaxial LaCoO3 Thin Films Microscopy and Microanalysis. 19: 1924-1925. DOI: 10.1017/S1431927613011616 |
0.618 |
|
| 2013 |
Zhou W, Lee J, Kapetanakis M, Prange M, Lupini A, Pantelides S, Idrobo J, Pennycook S. Low Voltage STEM for the Study of Defects in 2D Materials Microscopy and Microanalysis. 19: 1232-1233. DOI: 10.1017/S1431927613008155 |
0.463 |
|
| 2013 |
Wang B, Puzyrev YS, Pantelides ST. Enhanced chemical reactions of oxygen at grain boundaries in polycrystalline graphene Polyhedron. 64: 158-162. DOI: 10.1016/J.Poly.2013.03.032 |
0.383 |
|
| 2013 |
Mukherjee S, Puzyrev Y, Hinckley J, Schrimpf RD, Fleetwood DM, Singh J, Pantelides ST. Role of bias conditions in the hot carrier degradation of AlGaN/GaN high electron mobility transistors Physica Status Solidi (C). 10: 794-798. DOI: 10.1002/Pssc.201200620 |
0.323 |
|
| 2013 |
Pantelides ST. The role of extended defects in device degradation Physica Status Solidi (a) Applications and Materials Science. 210: 175-180. DOI: 10.1002/Pssa.201200567 |
0.391 |
|
| 2012 |
Prange MP, Oxley MP, Varela M, Pennycook SJ, Pantelides ST. Simulation of spatially resolved electron energy loss near-edge structure for scanning transmission electron microscopy. Physical Review Letters. 109: 246101. PMID 23368348 DOI: 10.1103/Physrevlett.109.246101 |
0.347 |
|
| 2012 |
Zhou W, Kapetanakis MD, Prange MP, Pantelides ST, Pennycook SJ, Idrobo JC. Direct determination of the chemical bonding of individual impurities in graphene. Physical Review Letters. 109: 206803. PMID 23215517 DOI: 10.1103/Physrevlett.109.206803 |
0.602 |
|
| 2012 |
Klie RF, Qiao Q, Paulauskas T, Gulec A, Rebola A, Öğüt S, Prange MP, Idrobo JC, Pantelides ST, Kolesnik S, Dabrowski B, Ozdemir M, Boyraz C, Mazumdar D, Gupta A. Observations of Co4+ in a higher spin state and the increase in the Seebeck coefficient of thermoelectric Ca3Co4O9. Physical Review Letters. 108: 196601. PMID 23003068 DOI: 10.1103/Physrevlett.108.196601 |
0.551 |
|
| 2012 |
Kim YM, He J, Biegalski MD, Ambaye H, Lauter V, Christen HM, Pantelides ST, Pennycook SJ, Kalinin SV, Borisevich AY. Probing oxygen vacancy concentration and homogeneity in solid-oxide fuel-cell cathode materials on the subunit-cell level. Nature Materials. 11: 888-94. PMID 22902896 DOI: 10.1038/Nmat3393 |
0.562 |
|
| 2012 |
Yu P, Luo W, Yi D, Zhang JX, Rossell MD, Yang CH, You L, Singh-Bhalla G, Yang SY, He Q, Ramasse QM, Erni R, Martin LW, Chu YH, Pantelides ST, et al. Interface control of bulk ferroelectric polarization. Proceedings of the National Academy of Sciences of the United States of America. 109: 9710-5. PMID 22647612 DOI: 10.1073/Pnas.1117990109 |
0.34 |
|
| 2012 |
Pennycook TJ, McBride JR, Rosenthal SJ, Pennycook SJ, Pantelides ST. Dynamic fluctuations in ultrasmall nanocrystals induce white light emission. Nano Letters. 12: 3038-42. PMID 22568665 DOI: 10.1021/Nl3008727 |
0.593 |
|
| 2012 |
Seidel J, Luo W, Suresha SJ, Nguyen PK, Lee AS, Kim SY, Yang CH, Pennycook SJ, Pantelides ST, Scott JF, Ramesh R. Prominent electrochromism through vacancy-order melting in a complex oxide. Nature Communications. 3: 799. PMID 22531184 DOI: 10.1038/Ncomms1799 |
0.33 |
|
| 2012 |
Newaz AK, Puzyrev YS, Wang B, Pantelides ST, Bolotin KI. Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment. Nature Communications. 3: 734. PMID 22415825 DOI: 10.1038/Ncomms1740 |
0.378 |
|
| 2012 |
Rossell MD, Erni R, Prange MP, Idrobo JC, Luo W, Zeches RJ, Pantelides ST, Ramesh R. Atomic structure of highly strained BiFeO3 thin films. Physical Review Letters. 108: 047601. PMID 22400888 DOI: 10.1103/Physrevlett.108.047601 |
0.573 |
|
| 2012 |
He W, Lin J, Wang B, Tuo S, Pantelides ST, Dickerson JH. An analytical expression for the van der Waals interaction in oriented-attachment growth: a spherical nanoparticle and a growing cylindrical nanorod. Physical Chemistry Chemical Physics : Pccp. 14: 4548-53. PMID 22361953 DOI: 10.1039/C2Cp23919A |
0.304 |
|
| 2012 |
Zhou W, Lee J, Nanda J, Pantelides ST, Pennycook SJ, Idrobo JC. Atomically localized plasmon enhancement in monolayer graphene. Nature Nanotechnology. 7: 161-5. PMID 22286496 DOI: 10.1038/Nnano.2011.252 |
0.583 |
|
| 2012 |
Appavoo K, Lei DY, Sonnefraud Y, Wang B, Pantelides ST, Maier SA, Haglund RF. Role of defects in the phase transition of VO2 nanoparticles probed by plasmon resonance spectroscopy. Nano Letters. 12: 780-6. PMID 22273268 DOI: 10.1021/Nl203782Y |
0.356 |
|
| 2012 |
Sharma YK, Ahyi AC, Issacs-Smith T, Shen X, Pantelides ST, Zhu X, Rozen J, Feldman LC, Williams JR, Xu Y, Garfunkel E. The effects of phosphorus at the SiO 2/4H-SiC interface Materials Science Forum. 717: 743-746. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.743 |
0.509 |
|
| 2012 |
Tuttle BR, Dhar S, Ryu SH, Zhu X, Williams JR, Feldman LC, Pantelides ST. Sodium, rubidium and cesium in the gate oxides of SiC MOSFETs Materials Science Forum. 717: 453-456. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.453 |
0.304 |
|
| 2012 |
Shen X, Pantelides ST. Oxidation-induced epilayer carbon di-interstitials as a major cause of endemically poor mobilities in 4H-SiC/SiO 2 structures Materials Science Forum. 717: 445-448. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.445 |
0.515 |
|
| 2012 |
Pantelides ST, Puzyrev Y, Tsetseris L, Wang B. Defects and doping and their role in functionalizing graphene Mrs Bulletin. 37: 1187-1194. DOI: 10.1557/Mrs.2012.187 |
0.365 |
|
| 2012 |
Puzyrev YS, Wang B, Zhang EX, Zhang CX, Newaz AKM, Bolotin KI, Fleetwood DM, Schrimpf RD, Pantelides ST. Surface Reactions and Defect Formation in Irradiated Graphene Devices Ieee Transactions On Nuclear Science. 59: 3039-3044. DOI: 10.1109/Tns.2012.2224134 |
0.401 |
|
| 2012 |
Ramachandran V, Reed RA, Schrimpf RD, McMorrow D, Boos JB, King MP, Zhang EX, Vizkelethy G, Shen X, Pantelides ST. Single-Event Transient Sensitivity of InAlSb/InAs/AlGaSb High Electron Mobility Transistors Ieee Transactions On Nuclear Science. 59: 2691-2696. DOI: 10.1109/Tns.2012.2223716 |
0.482 |
|
| 2012 |
Hughart DR, Schrimpf RD, Fleetwood DM, Rowsey NL, Law ME, Tuttle BR, Pantelides ST. The effects of proton-defect interactions on radiation-induced interface-trap formation and annealing Ieee Transactions On Nuclear Science. 59: 3087-3092. DOI: 10.1109/Tns.2012.2220982 |
0.306 |
|
| 2012 |
Zhang EX, Zhang CX, Fleetwod DM, Schrimpf RD, Dhar S, Ryu S, Shen X, Pantelides ST. Bias-Temperature Instabilities in 4H-SiC Metal–Oxide–Semiconductor Capacitors Ieee Transactions On Device and Materials Reliability. 12: 391-398. DOI: 10.1109/Tdmr.2012.2188404 |
0.48 |
|
| 2012 |
Wang B, Pantelides ST. Magnetic moment of a single vacancy in graphene and semiconducting nanoribbons Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.165438 |
0.377 |
|
| 2012 |
Borisevich AY, Lupini AR, He J, Eliseev EA, Morozovska AN, Svechnikov GS, Yu P, Chu YH, Ramesh R, Pantelides ST, Kalinin SV, Pennycook SJ. Interface dipole between two metallic oxides caused by localized oxygen vacancies Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.140102 |
0.601 |
|
| 2012 |
Bubin S, Wang B, Pantelides S, Varga K. Simulation of high-energy ion collisions with graphene fragments Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.235435 |
0.594 |
|
| 2012 |
Tsetseris L, Pantelides ST. Molecular doping of graphene with ammonium groups Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.155446 |
0.342 |
|
| 2012 |
Zhang EX, Newaz AKM, Wang B, Zhang CX, Fleetwood DM, Bolotin KI, Schrimpf RD, Pantelides ST, Alles ML. Ozone-exposure and annealing effects on graphene-on-SiO 2 transistors Applied Physics Letters. 101. DOI: 10.1063/1.4753817 |
0.399 |
|
| 2012 |
Kim YM, He J, Biegalski MD, Ambaye H, Lauter V, Christen HM, Pantelides ST, Pennycook SJ, Kalinin SV, Borisevich AY. Probing oxygen vacancy concentration and homogeneity in solid-oxide fuel-cell cathode materials on the subunit-cell level Nature Materials. 11: 888-894. DOI: 10.1038/nmat3393 |
0.453 |
|
| 2012 |
Pennycook TJ, McBride JR, Rosenthal SJ, Pennycook SJ, Pantelides ST. Correction to Dynamic Fluctuations in Ultrasmall Nanocrystals Induce White Light Emission Nano Letters. 12: 4415-4415. DOI: 10.1021/Nl302525R |
0.561 |
|
| 2012 |
McBride J, Rosenthal S, Pantelides S, Pennycook S, Pennycook T. Dynamics and White Light Emission from CdSe Nanocrystals Microscopy and Microanalysis. 18: 1830-1831. DOI: 10.1017/S1431927612011002 |
0.564 |
|
| 2012 |
Oxley M, Prange M, Pantelides S, Varela M, Pennycook S. Simulation Of Electron Energy Loss Near Edge Structure At Atomic Resolution For Aberration Corrected STEM Microscopy and Microanalysis. 18: 1490-1491. DOI: 10.1017/S1431927612009300 |
0.348 |
|
| 2012 |
Pennycook S, Varela M, Lupini A, Oxley M, Zhou W, Lee J, Idrobo J, Pennycook T, Pantelides S. Insights Into Energy Materials Through Aberration-Corrected STEM Microscopy and Microanalysis. 18: 1354-1355. DOI: 10.1017/S1431927612008628 |
0.657 |
|
| 2012 |
Sharma YK, Ahyi AC, Issacs-Smith T, Shen X, Pantelides ST, Zhu X, Feldman LC, Rozen J, Williams JR. Phosphorous passivation of the SiO 2/4H-SiC interface Solid-State Electronics. 68: 103-107. DOI: 10.1016/J.Sse.2011.10.030 |
0.54 |
|
| 2012 |
Pantelides ST, Puzyrev Y, Shen X, Roy T, Dasgupta S, Tuttle BR, Fleetwood DM, Schrimpf RD. Reliability of III-V devices - The defects that cause the trouble Microelectronic Engineering. 90: 3-8. DOI: 10.1016/J.Mee.2011.04.019 |
0.508 |
|
| 2012 |
Tsetseris L, Pantelides ST. Hydrogen uptake by graphene and nucleation of graphane Journal of Materials Science. 47: 7571-7579. DOI: 10.1007/S10853-012-6447-6 |
0.33 |
|
| 2011 |
Rivera-Calzada A, Diaz-Guillen MR, Dura OJ, Sanchez-Santolino G, Pennycook TJ, Schmidt R, Bruno FY, Garcia- Barriocanal J, Sefrioui Z, Nemes NM, Garcia-Hernandez M, Varela M, Leon C, Pantelides ST, Pennycook SJ, et al. Tailoring interface structure in highly strained YSZ/STO heterostructures. Advanced Materials (Deerfield Beach, Fla.). 23: 5268-74. PMID 22299141 DOI: 10.1002/Adma.201102106 |
0.63 |
|
| 2011 |
Lee J, Zhou W, Idrobo JC, Pennycook SJ, Pantelides ST. Vacancy-driven anisotropic defect distribution in the battery-cathode material LiFePO4. Physical Review Letters. 107: 085507. PMID 21929178 DOI: 10.1103/Physrevlett.107.085507 |
0.521 |
|
| 2011 |
Wang B, Wright D, Cliffel D, Haglund R, Pantelides ST. Ionization-enhanced decomposition of 2,4,6-trinitrotoluene (TNT) molecules. The Journal of Physical Chemistry. A. 115: 8142-6. PMID 21678974 DOI: 10.1021/Jp2022852 |
0.349 |
|
| 2011 |
Pennycook SJ, Van Benthem K, Marinopoulos AG, Oh SH, Molina SI, Borisevich AY, Luo W, Pantelides ST. Seeing inside materials by aberration-corrected electron microscopy International Journal of Nanotechnology. 8: 935-947. DOI: 10.1504/Ijnt.2011.044438 |
0.616 |
|
| 2011 |
Puzyrev YS, Roy T, Zhang EX, Fleetwood DM, Schrimpf RD, Pantelides ST. Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors Ieee Transactions On Nuclear Science. 58: 2918-2924. DOI: 10.1109/Tns.2011.2170433 |
0.353 |
|
| 2011 |
Rowsey NL, Law ME, Schrimpf RD, Fleetwood DM, Tuttle BR, Pantelides ST. A quantitative model for ELDRS and H 2 degradation effects in irradiated oxides based on first principles calculations Ieee Transactions On Nuclear Science. 58: 2937-2944. DOI: 10.1109/Tns.2011.2169458 |
0.307 |
|
| 2011 |
Zhang CX, Zhang EX, Fleetwood DM, Schrimpf RD, Dhar S, Ryu S, Shen X, Pantelides ST. Effects of Bias on the Irradiation and Annealing Responses of 4H-SiC MOS Devices Ieee Transactions On Nuclear Science. 58: 2925-2929. DOI: 10.1109/Tns.2011.2168424 |
0.482 |
|
| 2011 |
Zhang EX, Newaz AKM, Wang B, Bhandaru S, Zhang CX, Fleetwood DM, Bolotin KI, Pantelides ST, Alles ML, Schrimpf RD, Weiss SM, Reed RA, Weller RA. Low-energy X-ray and ozone-exposure induced defect formation in graphene materials and devices Ieee Transactions On Nuclear Science. 58: 2961-2967. DOI: 10.1109/Tns.2011.2167519 |
0.388 |
|
| 2011 |
DasGupta S, Shen X, Schrimpf RD, Reed RA, Pantelides ST, Fleetwood DM, Bergman JI, Brar B. Degradation in InAs–AlSb HEMTs Under Hot-Carrier Stress Ieee Transactions On Electron Devices. 58: 1499-1507. DOI: 10.1109/Ted.2011.2116157 |
0.514 |
|
| 2011 |
Yan JA, Driscoll JA, Wyatt BK, Varga K, Pantelides ST. Time-domain simulation of electron diffraction in crystals Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.224117 |
0.509 |
|
| 2011 |
Warnick KH, Puzyrev Y, Roy T, Fleetwood DM, Schrimpf RD, Pantelides ST. Room-temperature diffusive phenomena in semiconductors: The case of AlGaN Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.214109 |
0.789 |
|
| 2011 |
Tsetseris L, Pantelides ST. Intermolecular bridges and carrier traps in defective C 60 crystals Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.195202 |
0.34 |
|
| 2011 |
Wang B, Pantelides ST. Controllable healing of defects and nitrogen doping of graphene by CO and NO molecules Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.245403 |
0.401 |
|
| 2011 |
Roy T, Zhang EX, Puzyrev YS, Shen X, Fleetwood DM, Schrimpf RD, Koblmueller G, Chu R, Poblenz C, Fichtenbaum N, Suh CS, Mishra UK, Speck JS, Pantelides ST. Temperature-dependence and microscopic origin of low frequency 1/f noise in GaN/AlGaN high electron mobility transistors Applied Physics Letters. 99. DOI: 10.1063/1.3662041 |
0.503 |
|
| 2011 |
Tsetseris L, Pantelides ST. Graphene nano-ribbon formation through hydrogen-induced unzipping of carbon nanotubes Applied Physics Letters. 99. DOI: 10.1063/1.3648105 |
0.303 |
|
| 2011 |
Shen X, Zhang EX, Zhang CX, Fleetwood DM, Schrimpf RD, Dhar S, Ryu S, Pantelides ST. Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures Applied Physics Letters. 98: 063507. DOI: 10.1063/1.3554428 |
0.534 |
|
| 2011 |
Shen X, Pantelides ST. Identification of a major cause of endemically poor mobilities in SiC/ SiO2 structures Applied Physics Letters. 98. DOI: 10.1063/1.3553786 |
0.53 |
|
| 2011 |
Tuttle BR, Dhar S, Ryu SH, Zhu X, Williams JR, Feldman LC, Pantelides ST. High electron mobility due to sodium ions in the gate oxide of SiC-metal-oxide-semiconductor field-effect transistors Journal of Applied Physics. 109. DOI: 10.1063/1.3533767 |
0.363 |
|
| 2011 |
Puzyrev YS, Roy T, Beck M, Tuttle BR, Schrimpf RD, Fleetwood DM, Pantelides ST. Dehydrogenation of defects and hot-electron degradation in GaN high-electron-mobility transistors Journal of Applied Physics. 109. DOI: 10.1063/1.3524185 |
0.381 |
|
| 2011 |
Pennycook TJ, Oxley MP, Garcia-Barriocanal J, Bruno FY, Leon C, Santamaria J, Pantelides ST, Varela M, Pennycook SJ. Seeing oxygen disorder in YSZ/SrTiO3 colossal ionic conductor heterostructures using EELS Epj Applied Physics. 54. DOI: 10.1051/Epjap/2011100413 |
0.61 |
|
| 2011 |
Pennycook T, McBride J, Rosenthal S, Pantelides S, Pennycook S. Structure of White Light Emitting CdSe Nanocrystals Microscopy and Microanalysis. 17: 1636-1637. DOI: 10.1017/S1431927611009056 |
0.577 |
|
| 2011 |
Zhou W, Prange M, Oxley M, Pantelides S, Pennycook S, Nanda J, Narula C, Idrobo J. Atomic Scale Study of Point Defects in Graphene using STEM Microscopy and Microanalysis. 17: 1498-1499. DOI: 10.1017/S1431927611008361 |
0.323 |
|
| 2011 |
Pantelides S, Pennycook T, Luo W, Prange M, Lee H, Oxley M, Garcia-Barriocanal J, Bruno F, Leon C, Santamaria J, Chisholm M, Varela M, Pennycook S. Probing Interfaces Using a Combination of Scanning Transmission Electron Microscopy and Density-Functional Theory Microscopy and Microanalysis. 17: 1316-1317. DOI: 10.1017/S1431927611007458 |
0.62 |
|
| 2011 |
Tsetseris L, Pantelides ST. Defect formation and annihilation at Ge-GeO2 interfaces Microelectronic Engineering. 88: 395-398. DOI: 10.1016/J.Mee.2010.08.027 |
0.383 |
|
| 2011 |
Golias E, Tsetseris L, Dimoulas A, Pantelides ST. Ge volatilization products in high-k gate dielectrics Microelectronic Engineering. 88: 427-430. DOI: 10.1016/J.Mee.2010.07.041 |
0.365 |
|
| 2011 |
Wang B, Puzyrev Y, Pantelides ST. Strain enhanced defect reactivity at grain boundaries in polycrystalline graphene Carbon. 49: 3983-3988. DOI: 10.1016/J.Carbon.2011.05.038 |
0.371 |
|
| 2011 |
Tsetseris L, Pantelides ST. Defect formation and hysteretic inter-tube displacement in multi-wall carbon nanotubes Carbon. 49: 581-586. DOI: 10.1016/J.Carbon.2010.09.061 |
0.306 |
|
| 2010 |
He J, Borisevich A, Kalinin SV, Pennycook SJ, Pantelides ST. Control of octahedral tilts and magnetic properties of perovskite oxide heterostructures by substrate symmetry. Physical Review Letters. 105: 227203. PMID 21231419 DOI: 10.1103/Physrevlett.105.227203 |
0.577 |
|
| 2010 |
Chisholm MF, Luo W, Oxley MP, Pantelides ST, Lee HN. Atomic-scale compensation phenomena at polar interfaces. Physical Review Letters. 105: 197602. PMID 21231196 DOI: 10.1103/Physrevlett.105.197602 |
0.325 |
|
| 2010 |
Pennycook TJ, Beck MJ, Varga K, Varela M, Pennycook SJ, Pantelides ST. Origin of colossal ionic conductivity in oxide multilayers: interface induced sublattice disorder. Physical Review Letters. 104: 115901. PMID 20366486 DOI: 10.1103/Physrevlett.104.115901 |
0.689 |
|
| 2010 |
Krivanek OL, Chisholm MF, Nicolosi V, Pennycook TJ, Corbin GJ, Dellby N, Murfitt MF, Own CS, Szilagyi ZS, Oxley MP, Pantelides ST, Pennycook SJ. Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy. Nature. 464: 571-4. PMID 20336141 DOI: 10.1038/Nature08879 |
0.655 |
|
| 2010 |
Jiang N, Zhang YY, Liu Q, Cheng ZH, Deng ZT, Du SX, Gao HJ, Beck MJ, Pantelides ST. Diffusivity control in molecule-on-metal systems using electric fields. Nano Letters. 10: 1184-8. PMID 20178372 DOI: 10.1021/Nl903473P |
0.32 |
|
| 2010 |
Tuttle BR, Hughart DR, Schrimpf RD, Fleetwood DM, Pantelides ST. Defect interactions of H2 in SiO2: Implications for ELDRS and latent interface trap buildup Ieee Transactions On Nuclear Science. 57: 3046-3053. DOI: 10.1109/Tns.2010.2086076 |
0.33 |
|
| 2010 |
Pennycook TJ, Hadjisavvas G, Idrobo JC, Kelires PC, Pantelides ST. Optical gaps of free and embedded Si nanoclusters: Density functional theory calculations Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.125310 |
0.717 |
|
| 2010 |
Idrobo JC, Pantelides ST. Origin of bulklike optical response in noble-metal Ag and Au nanoparticles Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.085420 |
0.521 |
|
| 2010 |
Walkosz W, Klie RF, Öǧüt S, Mikijelj B, Pennycook SJ, Pantelides ST, Idrobo JC. Crystal-induced effects at crystal/amorphous interfaces: The case of Si3N4/SiO2 Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.081412 |
0.585 |
|
| 2010 |
Sergueev N, Tsetseris L, Varga K, Pantelides S. Configuration and conductance evolution of benzene-dithiol molecular junctions under elongation Physical Review B. 82: 73106. DOI: 10.1103/Physrevb.82.073106 |
0.507 |
|
| 2010 |
Tsetseris L, Pantelides ST. Oxygen and water-related impurities in C60 crystals: A density-functional theory study Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.045201 |
0.317 |
|
| 2010 |
Shen X, Oxley MP, Puzyrev Y, Tuttle BR, Duscher G, Pantelides ST. Excess carbon in silicon carbide Journal of Applied Physics. 108. DOI: 10.1063/1.3517142 |
0.505 |
|
| 2010 |
Shen X, Dasgupta S, Reed RA, Schrimpf RD, Fleetwood DM, Pantelides ST. Recoverable degradation in InAs/AlSb high-electron mobility transistors: The role of hot carriers and metastable defects in AlSb Journal of Applied Physics. 108. DOI: 10.1063/1.3505795 |
0.527 |
|
| 2010 |
Tsetseris L, Fleetwood DM, Schrimpf RD, Pantelides ST. Hydrogen-dopant interactions in SiGe and strained Si Applied Physics Letters. 96. DOI: 10.1063/1.3456395 |
0.329 |
|
| 2010 |
Roy T, Puzyrev YS, Tuttle BR, Fleetwood DM, Schrimpf RD, Brown DF, Mishra UK, Pantelides ST. Electrical-stress-induced degradation in AlGaN/GaN high electron mobility transistors grown under gallium-rich, nitrogen-rich, and ammonia-rich conditions Applied Physics Letters. 96. DOI: 10.1063/1.3377004 |
0.313 |
|
| 2010 |
Puzyrev YS, Tuttle BR, Schrimpf RD, Fleetwood DM, Pantelides ST. Theory of hot-carrier-induced phenomena in GaN high-electron-mobility transistors Applied Physics Letters. 96. DOI: 10.1063/1.3293008 |
0.357 |
|
| 2010 |
Pennycook T, Varela M, Beck M, Garcia-Barriocanal J, Bruno F, Leon C, Santamaria J, Pantelides S, Pennycook S. Strain-Enhanced Ionic Conductivity Microscopy and Microanalysis. 16: 100-101. DOI: 10.1017/S1431927610061921 |
0.572 |
|
| 2010 |
Idrobo J, Chisholm M, Prange M, Tao J, Zhu Y, Ren Z, Zhao Z, Pantelides S, Pennycook S. Revealing Electronic, Structural and Magnetic Phases in NdFeAsO with Electron Energy-Loss Spectroscopy Microscopy and Microanalysis. 16: 88-89. DOI: 10.1017/S1431927610060423 |
0.549 |
|
| 2010 |
Pennycook S, Borisevich A, Varela M, Lupini A, Chang H, Leonard D, Pennycook T, Oxley M, Idrobo J, Yurdakul H, Turan S, Yu P, Ramesh R, Pantelides S. Interface Structure-Property Relations Through Aberration-Corrected STEM Microscopy and Microanalysis. 16: 1420-1421. DOI: 10.1017/S1431927610059787 |
0.742 |
|
| 2010 |
Tsetseris L, Logothetidis S, Pantelides ST. Atomic-scale mechanisms for diffusion of impurities in transition-metal nitrides Surface and Coatings Technology. 204: 2089-2094. DOI: 10.1016/J.Surfcoat.2009.09.002 |
0.331 |
|
| 2009 |
Pennycook SJ, Chisholm MF, Lupini AR, Varela M, Borisevich AY, Oxley MP, Luo WD, van Benthem K, Oh SH, Sales DL, Molina SI, García-Barriocanal J, Leon C, Santamaría J, Rashkeev SN, ... Pantelides ST, et al. Aberration-corrected scanning transmission electron microscopy: from atomic imaging and analysis to solving energy problems. Philosophical Transactions. Series a, Mathematical, Physical, and Engineering Sciences. 367: 3709-33. PMID 19687062 DOI: 10.1098/Rsta.2009.0112 |
0.57 |
|
| 2009 |
Pennycook SJ, Benthem Kv, Marinopoulos AG, Pantelides ST. Microscopic Characterization of Devices by Scanning Transmission Electron Microscopy: From Single Atom Imaging to Macroscopic Properties The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2009.B-1-1 |
0.345 |
|
| 2009 |
Beck MJ, Puzyrev YS, Sergueev N, Varga K, Schrimpf RD, Fleetwood DM, Pantelides ST. The role of atomic displacements in ION-induced dielectric breakdown Ieee Transactions On Nuclear Science. 56: 3210-3217. DOI: 10.1109/Tns.2009.2034157 |
0.581 |
|
| 2009 |
Arora R, Rozen J, Fleetwood DM, Galloway KF, Xuan Zhang C, Han J, Dimitrijev S, Kong F, Feldman LC, Pantelides ST, Schrimpf RD. Charge trapping properties of 3C- and 4H-SiC MOS capacitors with nitrided gate oxides Ieee Transactions On Nuclear Science. 56: 3185-3191. DOI: 10.1109/Tns.2009.2031604 |
0.319 |
|
| 2009 |
Idrobo JC, Halabica A, Magruder RH, Haglund RF, Pennycook SJ, Pantelides ST. Universal optical response of Si-Si bonds and its evolution from nanoparticles to bulk crystals Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.125322 |
0.548 |
|
| 2009 |
Tuttle BR, Pantelides ST. Vacancy-related defects and the Eδ′ center in amorphous silicon dioxide: Density functional calculations Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.115206 |
0.372 |
|
| 2009 |
Varela M, Oxley MP, Luo W, Tao J, Watanabe M, Lupini AR, Pantelides ST, Pennycook SJ. Atomic-resolution imaging of oxidation states in manganites Physical Review B. 79: 85117. DOI: 10.1103/Physrevb.79.085117 |
0.39 |
|
| 2009 |
Lu J, Zhang X, Pantelides ST. Standing spin waves excited optically across an indirect gap in short graphene nanoribbons Physical Review B. 79: 73408. DOI: 10.1103/Physrevb.79.073408 |
0.315 |
|
| 2009 |
Luo W, Varela M, Tao J, Pennycook SJ, Pantelides ST. Electronic and crystal-field effects in the fine structure of electron energy-loss spectra of manganites Physical Review B. 79. DOI: 10.1103/Physrevb.79.052405 |
0.352 |
|
| 2009 |
Tsetseris L, Pantelides ST. Morphology and defect properties of the Ge-GeO2 interface Applied Physics Letters. 95. DOI: 10.1063/1.3280385 |
0.382 |
|
| 2009 |
Idrobo JC, Oxley MP, Walkosz W, Klie RF, Öǧüt S, Mikijelj B, Pennycook SJ, Pantelides ST. Identification and lattice location of oxygen impurities in α-Si 3 N4 Applied Physics Letters. 95. DOI: 10.1063/1.3250922 |
0.564 |
|
| 2009 |
Restrepo OD, Varga K, Pantelides ST. First-principles calculations of electron mobilities in silicon: Phonon and Coulomb scattering Applied Physics Letters. 94. DOI: 10.1063/1.3147189 |
0.581 |
|
| 2009 |
Tsetseris L, Logothetidis S, Pantelides ST. Migration of species in a prototype diffusion barrier: Cu, O, and H in TiN Applied Physics Letters. 94. DOI: 10.1063/1.3122344 |
0.303 |
|
| 2009 |
Tsetseris L, Pantelides ST. First-principles studies on organic electronic materials Epj Applied Physics. 46. DOI: 10.1051/Epjap/2009031 |
0.325 |
|
| 2009 |
Idrobo JC, Oxley MP, Walkosz W, Klie RF, Öĝüt S, Mikijelj B, Pennycook SJ, Pantelides ST. Direct imaging of light elements in aberration-corrected scanning transmission electron microscopy Microscopy and Microanalysis. 15: 1480-1481. DOI: 10.1017/S143192760909792X |
0.524 |
|
| 2009 |
Tsetseris L, Pantelides ST. Modification of the electronic properties of rubrene crystals by water and oxygen-related species Organic Electronics: Physics, Materials, Applications. 10: 333-340. DOI: 10.1016/J.Orgel.2008.12.009 |
0.335 |
|
| 2009 |
Tsetseris L, Pantelides ST. Adatom complexes and self-healing mechanisms on graphene and single-wall carbon nanotubes Carbon. 47: 901-908. DOI: 10.1016/J.Carbon.2008.12.002 |
0.339 |
|
| 2009 |
Pantelides ST, Bernholc J, Pollmann J, Lipari NO. Green's function scattering‐theoretic methods for point defects, surfaces, and interfaces in solids International Journal of Quantum Chemistry. 14: 507-521. DOI: 10.1002/Qua.560140845 |
0.556 |
|
| 2008 |
Hatcher R, Beck M, Tackett A, Pantelides ST. Dynamical effects in the interaction of ion beams with solids. Physical Review Letters. 100: 103201. PMID 18352184 DOI: 10.1103/Physrevlett.100.103201 |
0.774 |
|
| 2008 |
Oh SH, van Benthem K, Molina SI, Borisevich AY, Luo W, Werner P, Zakharov ND, Kumar D, Pantelides ST, Pennycook SJ. Point defect configurations of supersaturated Au atoms inside Si nanowires. Nano Letters. 8: 1016-9. PMID 18336008 DOI: 10.1021/Nl072670+ |
0.603 |
|
| 2008 |
Rozen J, Dhar S, Wang SW, Afanas'ev VV, Pantelides ST, Williams JR, Feldman LC. Impact of Nitridation on Negative and Positive Charge Buildup in SiC Gate Oxides Materials Science Forum. 803-806. DOI: 10.4028/Www.Scientific.Net/Msf.600-603.803 |
0.336 |
|
| 2008 |
Batyrev IG, Hughart D, Durand R, Bounasser M, Tuttle BR, Fleetwood DM, Schrimpf RD, Rashkeev SN, Dunham GW, Law M, Pantelides ST. Effects of hydrogen on the radiation response of bipolar transistors: Experiment and modeling Ieee Transactions On Nuclear Science. 55: 3039-3045. DOI: 10.1109/Tns.2008.2009353 |
0.308 |
|
| 2008 |
Beck MJ, Tuttle BR, Schrimpf RD, Fleetwood DM, Pantelides ST. Atomic displacement effects in single-event gate rupture Ieee Transactions On Nuclear Science. 55: 3025-3031. DOI: 10.1109/Tns.2008.2009215 |
0.39 |
|
| 2008 |
Chen XJ, Barnaby HJ, Vermeire B, Holbert KE, Wright D, Pease RL, Schrimpf RD, Fleetwood DM, Pantelides ST, Shaneyfelt MR, Adell P. Post-irradiation annealing mechanisms of defects generated in hydrogenated bipolar oxides Ieee Transactions On Nuclear Science. 55: 3032-3038. DOI: 10.1109/Tns.2008.2006972 |
0.315 |
|
| 2008 |
Fleetwood DM, Schrimpf RD, Pantelides ST, Pease RL, Dunham GW. Electron capture, hydrogen release, and enhanced gain degradation in linear bipolar devices Ieee Transactions On Nuclear Science. 55: 2986-2991. DOI: 10.1109/Tns.2008.2006485 |
0.342 |
|
| 2008 |
Tsetseris L, Pantelides ST. Large impurity effects in rubrene crystals: First-principles calculations Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.115205 |
0.365 |
|
| 2008 |
Tsetseris L, Kalfagiannis N, Logothetidis S, Pantelides ST. Trapping and release of impurities in TiN: A first-principles study Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.094111 |
0.359 |
|
| 2008 |
Griffin Roberts K, Varela M, Rashkeev S, Pantelides ST, Pennycook SJ, Krishnan KM. Defect-mediated ferromagnetism in insulating Co-doped anatase TiO2 thin films Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.014409 |
0.375 |
|
| 2008 |
Marinopoulos AG, van Benthem K, Rashkeev SN, Pennycook SJ, Pantelides ST. Impurity segregation and ordering inSi/SiO2/HfO2structures Physical Review B. 77. DOI: 10.1103/Physrevb.77.195317 |
0.321 |
|
| 2008 |
Rozen J, Dhar S, Dixit SK, Afanas'Ev VV, Roberts FO, Dang HL, Wang S, Pantelides ST, Williams JR, Feldman LC. Increase in oxide hole trap density associated with nitrogen incorporation at the SiO2 /SiC interface Journal of Applied Physics. 103. DOI: 10.1063/1.2940736 |
0.36 |
|
| 2008 |
Halabica A, Idrobo JC, Pantelides ST, Magruder RH, Pennycook SJ, Haglund RF. Pulsed infrared laser annealing of gold nanoparticles embedded in a silica matrix Journal of Applied Physics. 103. DOI: 10.1063/1.2909965 |
0.509 |
|
| 2008 |
Benthem KV, Oh SH, Borisevich AY, Luo W, Werner P, Zakharov ND, Pantelides ST, Pennycook SJ. Direct imaging of point defect configurations for Au inside Si nanowires Microscopy and Microanalysis. 14: 204-205. DOI: 10.1017/S1431927608087357 |
0.549 |
|
| 2008 |
Idrobo JC, Pant P, Narayan J, Pennycook SJ, Pantelides ST. Atomic investigation of Al2O3/GaN heterostructures interfaces using aberration-corrected STEM combined with first-principles methods Microscopy and Microanalysis. 14: 1402-1403. DOI: 10.1017/S1431927608087187 |
0.552 |
|
| 2008 |
Varela M, Christen H, Lee H, Petit L, Schulthess T, Pennycook S, Luo W, Pantelides S, Garcia-Barriocanal J, Leon C, Santamaria J. Oxide Interfaces Under the Electron Microscope Microscopy and Microanalysis. 14: 1346-1347. DOI: 10.1017/S1431927608086194 |
0.309 |
|
| 2008 |
Pennycook SJ, Chisholm MF, Lupini AR, Varela M, van Benthem K, Borisevich AY, Oxley MP, Luo W, Pantelides ST. Chapter 9 Materials Applications of Aberration-Corrected Scanning Transmission Electron Microscopy Advances in Imaging and Electron Physics. 153: 327-384. DOI: 10.1016/S1076-5670(08)01009-4 |
0.569 |
|
| 2008 |
Tsetseris L, Pantelides ST. Probing the nano-scale with first-principles calculations Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 152: 109-113. DOI: 10.1016/J.Mseb.2008.06.010 |
0.328 |
|
| 2008 |
Pantelides S, Lu Z, Nicklaw C, Bakos T, Rashkeev S, Fleetwood D, Schrimpf R. The E′ center and oxygen vacancies in SiO2 Journal of Non-Crystalline Solids. 354: 217-223. DOI: 10.1016/J.Jnoncrysol.2007.08.080 |
0.383 |
|
| 2008 |
Tsetseris L, Pantelides ST. Vacancies, interstitials and their complexes in titanium carbide Acta Materialia. 56: 2864-2871. DOI: 10.1016/J.Actamat.2008.02.020 |
0.333 |
|
| 2007 |
Lu JQ, Zhang XG, Pantelides ST. Standing Friedel waves: a quantum probe of electronic states in nanoscale devices. Physical Review Letters. 99: 226804. PMID 18233314 DOI: 10.1103/Physrevlett.99.226804 |
0.309 |
|
| 2007 |
Beck MJ, Tsetseris L, Pantelides ST. Stability and dynamics of Frenkel pairs in si. Physical Review Letters. 99: 215503. PMID 18233226 DOI: 10.1103/Physrevlett.99.215503 |
0.315 |
|
| 2007 |
Luo W, Pennycook SJ, Pantelides ST. s-Electron ferromagnetism in gold and silver nanoclusters. Nano Letters. 7: 3134-7. PMID 17867717 DOI: 10.1021/Nl071688H |
0.322 |
|
| 2007 |
Luo W, Franceschetti A, Varela M, Tao J, Pennycook SJ, Pantelides ST. Orbital-occupancy versus charge ordering and the strength of electron correlations in electron-doped CaMnO3. Physical Review Letters. 99: 036402. PMID 17678300 DOI: 10.1103/Physrevlett.99.036402 |
0.341 |
|
| 2007 |
Pu Q, Leng Y, Tsetseris L, Park HS, Pantelides ST, Cummings PT. Molecular dynamics simulations of stretched gold nanowires: the relative utility of different semiempirical potentials. The Journal of Chemical Physics. 126: 144707. PMID 17444732 DOI: 10.1063/1.2717162 |
0.323 |
|
| 2007 |
Wang S, Dhar S, Wang SR, Ahyi AC, Franceschetti A, Williams JR, Feldman LC, Pantelides ST. Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen. Physical Review Letters. 98: 026101. PMID 17358620 DOI: 10.1103/Physrevlett.98.026101 |
0.367 |
|
| 2007 |
Dixit SK, Zhou XJ, Schrimpf RD, Fleetwood DM, Pantelides ST, Choi R, Bersuker G, Feldman LC. Radiation induced charge trapping in ultrathin HfO 2-based MOSFETs Ieee Transactions On Nuclear Science. 54: 1883-1890. DOI: 10.1109/Tns.2007.911423 |
0.302 |
|
| 2007 |
Beck MJ, Hatcher R, Schrimpf RD, Fleetwood DM, Pantelides ST. Quantum mechanical description of displacement damage formation Ieee Transactions On Nuclear Science. 54: 1906-1912. DOI: 10.1109/Tns.2007.910231 |
0.775 |
|
| 2007 |
Caussanel M, Canals A, Dixit SK, Beck MJ, Touboul AD, Schrimpf RD, Fleetwood DM, Pantelides ST. Doping-type dependence of damage in silicon diodes exposed to X-ray, proton, and He+ irradiations Ieee Transactions On Nuclear Science. 54: 1925-1930. DOI: 10.1109/Tns.2007.909021 |
0.305 |
|
| 2007 |
Chen DK, Schrimpf RD, Fleetwood DM, Galloway KF, Pantelides ST, Dimoulas A, Mavrou G, Sotiropoulos A, Panayiotatos Y. Total dose response of Ge MOS capacitors with HfO2/Dy 2O3 gate stacks Ieee Transactions On Nuclear Science. 54: 971-974. DOI: 10.1109/Tns.2007.892116 |
0.316 |
|
| 2007 |
Tsetseris L, Zhou XJ, Fleetwood DM, Schrimpf RD, Pantelides ST. Hydrogen-related instabilities in MOS devices under bias temperature stress Ieee Transactions On Device and Materials Reliability. 7: 502-508. DOI: 10.1109/Tdmr.2007.910438 |
0.344 |
|
| 2007 |
Hadjisavvas G, Tsetseris L, Pantelides ST. The origin of electron mobility enhancement in strained MOSFETs Ieee Electron Device Letters. 28: 1018-1020. DOI: 10.1109/Led.2007.906471 |
0.373 |
|
| 2007 |
Varga K, Pantelides ST. Quantum transport in molecules and nanotube devices Physical Review Letters. 98. DOI: 10.1103/PhysRevLett.98.076804 |
0.473 |
|
| 2007 |
Tsetseris L, Kalfagiannis N, Logothetidis S, Pantelides ST. Structure and interaction of point defects in transition-metal nitrides Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.224107 |
0.337 |
|
| 2007 |
Zhang XG, Varga K, Pantelides ST. Generalized Bloch theorem for complex periodic potentials: A powerful application to quantum transport calculations Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.035108 |
0.548 |
|
| 2007 |
Ma HF, Qin ZH, Xu MC, Shi DX, Gao H, Wang S, Pantelides ST. Formation and evolution of a self-organized hierarchy of Ge nanostructures onSi(111)−(7×7): STM observations and first-principles calculations Physical Review B. 75. DOI: 10.1103/Physrevb.75.165403 |
0.314 |
|
| 2007 |
Tsetseris L, Pantelides ST. Intercalation of oxygen and water molecules in pentacene crystals: First-principles calculations Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.153202 |
0.329 |
|
| 2007 |
Qin ZH, Shi DX, Ma HF, Gao H, Rao AS, Wang S, Pantelides ST. STM observation and first-principles determination of Ge nanoscale structures on Si(111) Physical Review B. 75. DOI: 10.1103/Physrevb.75.085313 |
0.347 |
|
| 2007 |
Marinopoulos AG, Batyrev I, Zhou XJ, Schrimpf RD, Fleetwood DM, Pantelides ST. Hydrogen shuttling near Hf-defect complexes in Si∕SiO2∕HfO2 structures Applied Physics Letters. 91: 233503. DOI: 10.1063/1.2820380 |
0.353 |
|
| 2007 |
Rozen J, Dhar S, Pantelides ST, Feldman LC, Wang S, Williams JR, Afanas’ev VV. Suppression of interface state generation upon electron injection in nitrided oxides grown on 4H-SiC Applied Physics Letters. 91: 153503. DOI: 10.1063/1.2790374 |
0.327 |
|
| 2007 |
Rashkeev SN, Sohlberg KW, Zhuo S, Pantelides ST. Hydrogen-Induced Initiation of Corrosion in Aluminum Journal of Physical Chemistry C. 111: 7175-7178. DOI: 10.1021/Jp0707687 |
0.577 |
|
| 2007 |
Pennycook T, Varela M, Sefrioui Z, Santamaría J, Pantelides S, Pennycook S. Atomic Scale Studies of Manganite Grain Boundaries with Colossal Magnetoresistance Microscopy and Microanalysis. 13. DOI: 10.1017/S1431927607078300 |
0.594 |
|
| 2007 |
Borisevich A, Sohlberg K, Caldararu M, Pantelides S, Pennycook S. Structure-Properties Relationships in SnO2/Al2O3 and Pt/SnO2/Al2O3 Catalysts Microscopy and Microanalysis. 13: 570-571. DOI: 10.1017/S143192760707746X |
0.651 |
|
| 2007 |
Pennycook S, Benthem Kv, Oxley M, Rashkeev S, Pantelides S. From 3D Imaging of Atoms to Macroscopic Device Properties Microscopy and Microanalysis. 13: 82-83. DOI: 10.1017/S1431927607077446 |
0.37 |
|
| 2007 |
Idrobo J, Halabica A, Rashkeev S, Glazoff M, Boatner L, Haglund R, Pennycook S, Pantelides S. Atomic-Scale Characterization and Optical Properties of Metal Nanoparticles Embedded in Alumina Matrices Microscopy and Microanalysis. 13. DOI: 10.1017/S1431927607077045 |
0.521 |
|
| 2007 |
Pantelides ST, Tsetseris L, Rashkeev S, Zhou X, Fleetwood D, Schrimpf R. Hydrogen in MOSFETs – A primary agent of reliability issues Microelectronics Reliability. 47: 903-911. DOI: 10.1016/J.Microrel.2006.10.011 |
0.302 |
|
| 2007 |
Tsetseris L, Fleetwood D, Schrimpf R, Zhou X, Batyrev I, Pantelides S. Hydrogen effects in MOS devices Microelectronic Engineering. 84: 2344-2349. DOI: 10.1016/J.Mee.2007.04.076 |
0.324 |
|
| 2007 |
Caussanel M, Schrimpf RD, Tsetseris L, Evans MH, Pantelides ST. Engineering model of a biased metal-molecule-metal junction Journal of Computational Electronics. 6: 425-430. DOI: 10.1007/S10825-007-0151-9 |
0.302 |
|
| 2007 |
Evans MH, Caussanel M, Schrimpf RD, Pantelides ST. First-principles calculations of mobilities in ultrathin double-gate MOSFETs Journal of Computational Electronics. 6: 85-88. DOI: 10.1007/S10825-006-0070-1 |
0.376 |
|
| 2007 |
Borisevich AY, Wang S, Rashkeev SN, Glazoff M, Pennycook SJ, Pantelides ST. Dual nanoparticle/substrate control of catalytic dehydrogenation Advanced Materials. 19: 2129-2133. DOI: 10.1002/Adma.200601618 |
0.587 |
|
| 2006 |
Du SX, Gao HJ, Seidel C, Tsetseris L, Ji W, Kopf H, Chi LF, Fuchs H, Pennycook SJ, Pantelides ST. Selective nontemplated adsorption of organic molecules on nanofacets and the role of bonding patterns. Physical Review Letters. 97: 156105. PMID 17155345 DOI: 10.1103/Physrevlett.97.156105 |
0.49 |
|
| 2006 |
Dhar S, Wang SR, Ahyi AC, Isaacs-Smith T, Pantelides ST, Williams JR, Feldman LC. Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface Materials Science Forum. 949-954. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.949 |
0.336 |
|
| 2006 |
Pantelides ST, Wang S, Franceschetti A, Buczko R, Ventra MD, Rashkeev SN, Tsetseris L, Evans MH, Batyrev IG, Feldman LC, Dhar S, McDonald K, Weller RA, Schrimpf RD, Fleetwood DM, et al. Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances Materials Science Forum. 935-948. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.935 |
0.359 |
|
| 2006 |
Beck MJ, Tsetseris L, Caussanel M, Schrimpf RD, Fleetwood DM, Pantelides ST. Atomic-scale mechanisms for low-NIEL dopant-type dependent damage in Si Ieee Transactions On Nuclear Science. 53: 3621-3628. DOI: 10.1109/Tns.2006.885383 |
0.349 |
|
| 2006 |
Dixit SK, Dhar S, Rozen J, Wang S, Schrimpf RD, Fleetwood DM, Pantelides ST, Williams JR, Feldman LC. Total dose radiation response of nitrided and non-nitrided SiO 2/4H-SiC MOS capacitors Ieee Transactions On Nuclear Science. 53: 3687-3692. DOI: 10.1109/Tns.2006.885164 |
0.331 |
|
| 2006 |
Batyrev IG, Rodgers MP, Fleetwood DM, Schrimpf RD, Pantelides ST. Effects of water on the aging and radiation response of MOS devices Ieee Transactions On Nuclear Science. 53: 3629-3635. DOI: 10.1109/Tns.2006.884787 |
0.322 |
|
| 2006 |
Zhou XJ, Fleetwood DM, Tsetseris L, Schrimpf RD, Pantelides ST. Effects of switched-bias annealing on charge trapping in HfO2 gate dielectrics Ieee Transactions On Nuclear Science. 53: 3636-3643. DOI: 10.1109/Tns.2006.884249 |
0.365 |
|
| 2006 |
Tsetseris L, Pantelides ST. Encapsulation of floating carbon nanotubes in SiO2 Physical Review Letters. 97. DOI: 10.1103/Physrevlett.97.266805 |
0.327 |
|
| 2006 |
Tsetseris L, Pantelides ST. Oxygen migration, agglomeration, and trapping: Key factors for the morphology of the Si-SiO2 interface Physical Review Letters. 97. DOI: 10.1103/Physrevlett.97.116101 |
0.357 |
|
| 2006 |
Tsetseris L, Pantelides ST. Reactions of excess hydrogen at a Si(111) surface with H termination: First-principles calculations Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.113301 |
0.318 |
|
| 2006 |
Zhang X, Lu Z, Pantelides ST. First-principles theory of tunneling currents in metal-oxide-semiconductor structures Applied Physics Letters. 89: 32112. DOI: 10.1063/1.2234283 |
0.305 |
|
| 2006 |
Varga K, Pantelides ST. Lagrange-function approach to real-space order-N electronic-structure calculations Physica Status Solidi (B) Basic Research. 243: 1110-1120. DOI: 10.1002/Pssb.200541415 |
0.546 |
|
| 2005 |
Evans MH, Zhang XG, Joannopoulos JD, Pantelides ST. First-principles mobility calculations and atomic-scale interface roughness in nanoscale structures. Physical Review Letters. 95: 106802. PMID 16196951 DOI: 10.1103/Physrevlett.95.106802 |
0.375 |
|
| 2005 |
Wang YL, Gao HJ, Guo HM, Wang S, Pantelides ST. Bonding configurations and collective patterns of Ge atoms adsorbed on Si(111)-(7 x 7). Physical Review Letters. 94: 106101. PMID 15783496 DOI: 10.1103/Physrevlett.94.106101 |
0.357 |
|
| 2005 |
Dhar S, Wang S, Williams JR, Pantelides ST, Feldman LC. Interface passivation for silicon dioxide layers on silicon carbide Mrs Bulletin. 30: 288-292. DOI: 10.1557/Mrs2005.75 |
0.337 |
|
| 2005 |
Rodgers MP, Fleetwood DM, Schrimpf RD, Batyrev IG, Wang S, Pantelides ST. The effects of aging on MOS irradiation and annealing response Ieee Transactions On Nuclear Science. 52: 2642-2648. DOI: 10.1109/Tns.2005.861079 |
0.32 |
|
| 2005 |
Tsetseris L, Schrimpf RD, Fleetwood DM, Pease RL, Pantelides ST. Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias Ieee Transactions On Nuclear Science. 52: 2265-2271. DOI: 10.1109/Tns.2005.860670 |
0.334 |
|
| 2005 |
Evans MH, Joannopoulos JD, Pantelides ST. Electronic and mechanical properties of planar and tubular boron structures Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.045434 |
0.328 |
|
| 2005 |
Tsetseris L, Pantelides ST. Atomic-scale mechanisms of selective adsorption and dimerization of pentacene on Si surfaces Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2139989 |
0.319 |
|
| 2005 |
Tsetseris L, Zhou XJ, Fleetwood DM, Schrimpf RD, Pantelides ST. Physical mechanisms of negative-bias temperature instability Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1897075 |
0.348 |
|
| 2005 |
Tsetseris L, Pantelides ST. Hydrogenation/deuteration of the Si-SiO 2 interface: Atomic-scale mechanisms and limitations Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1883710 |
0.353 |
|
| 2005 |
Klie RF, Buban JP, Varela M, Franceschetti A, Jooss C, Zhu Y, Browning ND, Pantelides ST, Pennycook SJ. Enhanced current transport at grain boundaries in high-Tc superconductors Nature. 435: 475-478. DOI: 10.1038/Nature03644 |
0.476 |
|
| 2005 |
Rashkeev SN, Benthem Kv, Pantelides ST, Pennycook SJ. Single Hf atoms inside the ultrathin SiO 2 interlayer between a HfO 2 dielectric film and the Si substrate: how do they modify the interface? Microelectronic Engineering. 80: 416-419. DOI: 10.1016/J.Mee.2005.04.030 |
0.379 |
|
| 2004 |
Sohlberg K, Rashkeev S, Borisevich AY, Pennycook SJ, Pantelides ST. Origin of anomalous Pt-Pt distances in the Pt/alumina catalytic system. Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry. 5: 1893-7. PMID 15648138 DOI: 10.1002/Cphc.200400212 |
0.686 |
|
| 2004 |
Varga K, Zhang Z, Pantelides ST. "Lagrange functions": a family of powerful basis sets for real-space order-N electronic structure calculations. Physical Review Letters. 93: 176403. PMID 15525095 DOI: 10.1103/Physrevlett.93.176403 |
0.529 |
|
| 2004 |
Wang S, Borisevich AY, Rashkeev SN, Glazoff MV, Sohlberg K, Pennycook SJ, Pantelides ST. Dopants adsorbed as single atoms prevent degradation of catalysts. Nature Materials. 3: 143-6. PMID 14991014 DOI: 10.1038/Nmat1077 |
0.7 |
|
| 2004 |
Evans MH, Zhang X, Joannopoulos JD, Pantelides ST. First-principles Calculation of Electron Mobilities in Ultrathin SOI MOSFETs Mrs Proceedings. 829. DOI: 10.1557/Proc-829-B7.10 |
0.331 |
|
| 2004 |
Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST. Hydrogen at the Si/SiO2 interface: From atomic-scale calculations to engineering models International Journal of High Speed Electronics and Systems. 14: 575-580. DOI: 10.1142/S0129156404002521 |
0.376 |
|
| 2004 |
Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST. Effects of hydrogen motion on interface trap formation and annealing Ieee Transactions On Nuclear Science. 51: 3158-3165. DOI: 10.1109/Tns.2004.839202 |
0.336 |
|
| 2004 |
Tsetseris L, Pantelides ST. Migration, incorporation, and passivation reactions of molecular hydrogen at the Si-SiO2 interface Physical Review B - Condensed Matter and Materials Physics. 70: 1-6. DOI: 10.1103/Physrevb.70.245320 |
0.331 |
|
| 2004 |
Bakos T, Rashkeev SN, Pantelides ST. Optically active defects in SiO2: The nonbridging oxygen center and the interstitial OH molecule Physical Review B - Condensed Matter and Materials Physics. 70. DOI: 10.1103/Physrevb.70.075203 |
0.339 |
|
| 2004 |
Bakos T, Rashkeev SN, Pantelides ST. H2O and O2 molecules in amorphous SiO2: Defect formation and annihilation mechanisms Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.195206 |
0.337 |
|
| 2004 |
Tsetseris L, Zhou XJ, Fleetwood DM, Schrimpf RD, Pantelides ST. Dual role of fluorine at the Si-Si O2 interface Applied Physics Letters. 85: 4950-4952. DOI: 10.1063/1.1825621 |
0.315 |
|
| 2004 |
Zhou XJ, Tsetseris L, Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST, Felix JA, Gusev EP, D’Emic C. Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics Applied Physics Letters. 84: 4394-4396. DOI: 10.1063/1.1757636 |
0.332 |
|
| 2004 |
Borisevich AY, Wang S, Rashkeev SN, Pantelides ST, Sohlberg K, Pennycook SJ. Single-atom sensitivity for solving catalysis problems Microscopy and Microanalysis. 10: 460-461. DOI: 10.1017/S1431927604886392 |
0.66 |
|
| 2004 |
Varga K, Wang LG, Pantelides ST, Zhang Z. Critical layer thickness in Stranski-Krastanow growth of Ge on Si(001) Surface Science. 562. DOI: 10.1016/J.Susc.2004.06.149 |
0.56 |
|
| 2003 |
Pennycook SJ, Lupini AR, Kadavanich A, McBride JR, Rosenthal SJ, Puetter RC, Yahil A, Krivanek OL, Dellby N, Nellist PDL, Duscher G, Wang LG, Pantelides ST. Aberration-corrected scanning transmission electron microscopy: The potential for nano- and interface science Zeitschrift Fuer Metallkunde/Materials Research and Advanced Techniques. 94: 350-357. DOI: 10.3139/146.030350 |
0.402 |
|
| 2003 |
Williams JR, Isaacs-Smith T, Wang S, Ahyi C, Lawless RM, Tin CC, Dhar S, Franceschetti AG, Pantelides ST, Feldman LC, Chung G, Chisholm MF. Passivation of oxide layers on 4H-SiC using sequential anneals in nitric oxide and hydrogen Mrs Proceedings. 786: 371-378. DOI: 10.1557/Proc-786-E8.1 |
0.301 |
|
| 2003 |
Tsetseris L, Zhou X, Fleetwood DM, Schrimpf RD, Pantelides ST. Field-induced reactions of water molecules at Si-dielectric interfaces Materials Research Society Symposium - Proceedings. 786: 171-176. DOI: 10.1557/Proc-786-E3.3 |
0.322 |
|
| 2003 |
Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST. Statistical Modeling of Radiation-Induced Proton Transport in Silicon: Deactivation of Dopant Acceptors in Bipolar Devices Ieee Transactions On Nuclear Science. 50: 1896-1900. DOI: 10.1109/Tns.2003.820751 |
0.338 |
|
| 2003 |
Bakos T, Rashkeev SN, Pantelides ST. Role of electronic versus atomic relaxations in Stokes shifts at defects in solids Physical Review Letters. 91. DOI: 10.1103/Physrevlett.91.226402 |
0.378 |
|
| 2003 |
Cai S, Rashkeev SN, Pantelides ST, Sohlberg K. Phase transformation mechanism between γ- and θ-alumina Physical Review B. 67. DOI: 10.1103/Physrevb.67.224104 |
0.59 |
|
| 2003 |
Rashkeev SN, Sohlberg K, Glazoff MV, Novak J, Pennycook SJ, Pantelides ST. Transition metal atoms on different alumina phases: The role of subsurface sites on catalytic activity Physical Review B. 67. DOI: 10.1103/Physrevb.67.115414 |
0.586 |
|
| 2003 |
McDonald K, Weller RA, Pantelides ST, Feldman LC, Chung GY, Tin CC, Williams JR. Characterization and modeling of the nitrogen passivation of interface traps in SiO2/4H–SiC Journal of Applied Physics. 93: 2719-2722. DOI: 10.1063/1.1542935 |
0.337 |
|
| 2003 |
Marka Z, Pasternak R, Albridge RG, Rashkeev SN, Pantelides ST, Tolk NH, Choi BK, Fleetwood DM, Schrimpf RD. Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2 Journal of Applied Physics. 93: 1865-1870. DOI: 10.1063/1.1534904 |
0.318 |
|
| 2003 |
Borisevich A, Pennycook S, Rashkeev S, Pantelides S. Studies of Single Dopant Atoms on Nanocrystalline γ-Alumina Supports by Aberration-Corrected Z-contrast STEM and First Principles Calculations Microscopy and Microanalysis. 9: 398-399. DOI: 10.1017/S1431927603441998 |
0.507 |
|
| 2003 |
Pasternak R, Shirokaya YV, Marka Z, Miller JK, Rashkeev SN, Pantelides ST, Tolk NH, Choi BK, Schrimpf RD, Fleetwood DM. Laser detection of radiation enhanced electron transport in ultra-thin oxides Nuclear Instruments and Methods in Physics Research, Section a: Accelerators, Spectrometers, Detectors and Associated Equipment. 514: 150-155. DOI: 10.1016/J.Nima.2003.08.098 |
0.302 |
|
| 2002 |
Lu ZY, Nicklaw CJ, Fleetwood DM, Schrimpf RD, Pantelides ST. Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2. Physical Review Letters. 89: 285505. PMID 12513159 DOI: 10.1103/Physrevlett.89.285505 |
0.354 |
|
| 2002 |
Cai SH, Rashkeev SN, Pantelides ST, Sohlberg K. Atomic scale mechanism of the transformation of gamma-alumina to theta-alumina. Physical Review Letters. 89: 235501. PMID 12485016 DOI: 10.1103/Physrevlett.89.235501 |
0.573 |
|
| 2002 |
Wu J, Wang EG, Varga K, Liu BG, Pantelides ST, Zhang Z. Island shape selection in Pt(111) submonolayer homoepitaxy with or without CO as an adsorbate. Physical Review Letters. 89: 146103. PMID 12366057 DOI: 10.1103/Physrevlett.89.146103 |
0.546 |
|
| 2002 |
Pantelides ST, Di Ventra M, Lang ND. First-principles simulations of molecular electronics. Annals of the New York Academy of Sciences. 960: 177-83. PMID 11971798 DOI: 10.1111/J.1749-6632.2002.Tb03032.X |
0.332 |
|
| 2002 |
Su YS, Pantelides ST. Diffusion mechanism of hydrogen in amorphous silicon: ab initio molecular dynamics simulation. Physical Review Letters. 88: 165503. PMID 11955239 DOI: 10.1103/Physrevlett.88.165503 |
0.307 |
|
| 2002 |
Bakos T, Rashkeev SN, Pantelides ST. Reactions and diffusion of water and oxygen molecules in amorphous SiO2. Physical Review Letters. 88: 055508. PMID 11863747 DOI: 10.1103/Physrevlett.88.055508 |
0.3 |
|
| 2002 |
Rashkeev SN, Sohlberg K, Glazoff MV, Novak J, Pennycook SJ, Pantelides ST. Chromium and Lanthanum on Transition Alumina Surfaces: The Role of Bulk Point-Defect Distributions on Catalytic Activity Mrs Proceedings. 751. DOI: 10.1557/Proc-751-Z2.7 |
0.605 |
|
| 2002 |
Pennycook SJ, Lupini AR, Varela M, Borisevich A, Chisholm MF, Abe E, Dellby N, Krivanek OL, Nellist PD, Wang LG, Buczko R, Fan X, Pantelides ST. Nanoscale Structure/Property Correlation Through Aberration-Corrected Stem And Theory Mrs Proceedings. 738. DOI: 10.1557/Proc-738-G1.1 |
0.575 |
|
| 2002 |
Nicklaw CJ, Lu ZY, Fleetwood DM, Schrimpf RD, Pantelides ST. The structure, properties, and dynamics of oxygen vacancies in amorphous SiO2 Ieee Transactions On Nuclear Science. 49: 2667-2673. DOI: 10.1109/Tns.2002.805408 |
0.332 |
|
| 2002 |
Fleetwood DM, Xiong HD, Lu Z-, Nicklaw CJ, Felix JA, Schrimpf RD, Pantelides ST. Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices Ieee Transactions On Nuclear Science. 49: 2674-2683. DOI: 10.1109/Tns.2002.805407 |
0.337 |
|
| 2002 |
Rashkeev S, Cirba C, Fleetwood D, Schrimpf R, Witczak S, Michez A, Pantelides S. Physical model for enhanced interface-trap formation at low dose rates Ieee Transactions On Nuclear Science. 49: 2650-2655. DOI: 10.1109/Tns.2002.805387 |
0.311 |
|
| 2002 |
Bakos T, Rashkeev S, Pantelides S. The origin of photoluminescence lines in irradiated amorphous SiO/sub 2/ Ieee Transactions On Nuclear Science. 49: 2713-2717. DOI: 10.1109/Tns.2002.805342 |
0.367 |
|
| 2002 |
Glinka YD, Wang W, Singh SK, Marka Z, Rashkeev SN, Shirokaya Y, Albridge R, Pantelides ST, Tolk NH, Lucovsky G. Characterization of charge-carrier dynamics in thin oxide layers on silicon by second harmonic generation Physical Review B. 65: 193103. DOI: 10.1103/Physrevb.65.193103 |
0.34 |
|
| 2002 |
White BD, Brillson LJ, Bataiev M, Fleetwood DM, Schrimpf RD, Choi BK, Pantelides ST. Detection of trap activation by ionizing radiation in SiO 2 by spatially localized cathodoluminescence spectroscopy Journal of Applied Physics. 92: 5729-5734. DOI: 10.1063/1.1512319 |
0.322 |
|
| 2002 |
Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST. Dual behavior of H+ at Si-SiO2 interfaces: Mobility versus trapping Applied Physics Letters. 81: 1839-1841. DOI: 10.1063/1.1504879 |
0.339 |
|
| 2002 |
Mensing G, Gilligan J, Hari P, Hurt E, Lüpke G, Pantelides S, Tolk N, Taylor PC. Defect transition energies and the density of electronic states in hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 299302: 621-625. DOI: 10.1016/S0022-3093(01)01207-8 |
0.353 |
|
| 2001 |
Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST. Defect generation by hydrogen at the Si- SiO(2) interface. Physical Review Letters. 87: 165506. PMID 11690213 DOI: 10.1103/Physrevlett.87.165506 |
0.324 |
|
| 2001 |
Sohlberg K, Pantelides ST, Pennycook SJ. Interactions of hydrogen with CeO2 Journal of the American Chemical Society. 123: 6609-6611. PMID 11439047 DOI: 10.1021/Ja004008K |
0.581 |
|
| 2001 |
Wang S, Di Ventra M, Kim SG, Pantelides ST. Atomic-scale dynamics of the formation and dissolution of carbon clusters in SiO(2). Physical Review Letters. 86: 5946-9. PMID 11415400 DOI: 10.1103/Physrevlett.86.5946 |
0.301 |
|
| 2001 |
Kim M, Duscher G, Browning ND, Sohlberg K, Pantelides ST, Pennycook SJ. Nonstoichiometry and the electrical activity of grain boundaries in SrTiO3. Physical Review Letters. 86: 4056-9. PMID 11328094 DOI: 10.1103/Physrevlett.86.4056 |
0.658 |
|
| 2001 |
Duscher G, Buczko R, Pennycook SJ, Pantelides ST. Core-hole effects on energy-loss near-edge structure Ultramicroscopy. 86: 355-362. PMID 11281155 DOI: 10.1016/S0304-3991(00)00126-1 |
0.356 |
|
| 2001 |
Sohlberg K, Pantelides ST, Pennycook SJ. Surface reconstruction and the difference in surface acidity between γ- and η-alumina Journal of the American Chemical Society. 123: 26-29. PMID 11273597 DOI: 10.1021/Ja002095A |
0.505 |
|
| 2001 |
Pantelides ST, Di Ventra M, Lang ND. Molecular electronics by the numbers Physica B: Condensed Matter. 296: 72-77. DOI: 10.1109/Tnano.2002.1005430 |
0.324 |
|
| 2001 |
Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST. Proton-induced defect generation at the Si-SiO 2 interface Ieee Transactions On Nuclear Science. 48: 2086-2092. DOI: 10.1109/23.983177 |
0.33 |
|
| 2001 |
Yan Y, Zhang SB, Pantelides ST. Control of doping by impurity chemical potentials: Predictions for p-type Zno Physical Review Letters. 86: 5723-5726. DOI: 10.1103/Physrevlett.86.5723 |
0.31 |
|
| 2001 |
Rashkeev SN, Di Ventra M, Pantelides ST. Hydrogen passivation and activation of oxygen complexes in silicon Applied Physics Letters. 78: 1571-1573. DOI: 10.1063/1.1355297 |
0.347 |
|
| 2001 |
Chung GY, Williams JR, Tin CC, McDonald K, Farmer D, Chanana RK, Pantelides ST, Holland OW, Feldman LC. Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation Applied Surface Science. 184: 399-403. DOI: 10.1016/S0169-4332(01)00684-5 |
0.313 |
|
| 2000 |
Fan X, Dickey EC, Eklund PC, Williams KA, Grigorian L, Buczko R, Pantelides ST, Pennycook SJ. Atomic arrangement of iodine atoms inside single-walled carbon nanotubes Physical Review Letters. 84: 4621-4. PMID 10990755 DOI: 10.1103/Physrevlett.84.4621 |
0.327 |
|
| 2000 |
Pantelides ST, Duscher G, Ventra MD, Buczko R, McDonald K, Huang MB, Weller RA, Baumvol IJR, Stedile FC, Radtke C, Pennycook SJ, Chung GY, Tin CC, Williams JR, Won JH, et al. Atomic-Scale Engineering of the SiC-SiO2 Interface Materials Science Forum. 338: 1133-1136. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1133 |
0.401 |
|
| 2000 |
Pennycook SJ, Kim M, Duscher G, Browning ND, Sohlberg K, Pantelides ST. The Origin of Electrical Activity at Grain Boundaries in Perovskites and Related Materials Mrs Proceedings. 654. DOI: 10.1557/Proc-654-Aa1.3.1 |
0.665 |
|
| 2000 |
Williams JR, Chung GY, Tin CC, McDonald K, Farmer D, Chanana RK, Weller RA, Pantelides ST, Holland OW, Das MK, Lipkin LA, Feldman LC. Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide Mrs Proceedings. 640. DOI: 10.1557/Proc-640-H3.5 |
0.325 |
|
| 2000 |
Pantelides ST, Buczko R, Ventra MD, Wang S, Kim S, PennycooK SJ, Duscher G, Feldman LC, Mcdonald K, Chanana RK, Weller RA, Williams JR, Chung GY, Tin CC, Isaacs-Smith T. Bonding, Defects, And Defect Dynamics In The Sic-SiO2 System Mrs Proceedings. 640. DOI: 10.1557/Proc-640-H3.3 |
0.397 |
|
| 2000 |
Buczko R, Pennycook SJ, Pantelides ST. Atomic-scale structure of the Si-SiO2 and SiC-SiO2 interfaces and the origin of their contrasting properties Materials Research Society Symposium - Proceedings. 592: 227-232. DOI: 10.1557/Proc-592-227 |
0.352 |
|
| 2000 |
Sohlberg K, Pantelides ST, Pennycook SJ. Theoretical explanation of Pt trimers observed by Z-contrast STEM Materials Research Society Symposium - Proceedings. 589: 241-246. DOI: 10.1557/Proc-589-241 |
0.598 |
|
| 2000 |
Bunson P, Di Ventra M, Pantelides S, Fleetwood D, Schrimpf R. Hydrogen-related defects in irradiated SiO/sub 2/ Ieee Transactions On Nuclear Science. 47: 2289-2296. DOI: 10.1109/23.903767 |
0.322 |
|
| 2000 |
White BD, Brillson LJ, Lee SC, Fleetwood DM, Schrimpf RD, Pantelides ST, Lee Y-, Lucovsky G. Low energy electron-excited nanoscale luminescence: a tool to detect trap activation by ionizing radiation Ieee Transactions On Nuclear Science. 47: 2276-2280. DOI: 10.1109/23.903765 |
0.351 |
|
| 2000 |
Nicklaw CJ, Pagey MP, Pantelides ST, Fleetwood DM, Schrimpf RD, Galloway KF, Wittig JE, Howard BM, Taw E, McNeil WH, Conley JF. Defects and nanocrystals generated by Si implantation into a-SiO/sub 2/ Ieee Transactions On Nuclear Science. 47: 2269-2275. DOI: 10.1109/23.903764 |
0.377 |
|
| 2000 |
Pantelides ST, Rashkeev SN, Buczko R, Fleetwood DM, Schrimpf RD. Reactions of hydrogen with Si-SiO 2 interfaces Ieee Transactions On Nuclear Science. 47: 2262-2268. DOI: 10.1109/23.903763 |
0.339 |
|
| 2000 |
Marka Z, Singh SK, Wang W, Lee SC, Kavich J, Glebov B, Rashkeev SN, Karmarkar AP, Albridge RG, Pantelides ST, Schrimpf RD, Fleetwood DM, Tolk NH. Characterization of X-ray radiation damage in Si/SiO2 structures using second-harmonic generation Ieee Transactions On Nuclear Science. 47: 2256-2261. DOI: 10.1109/23.903762 |
0.333 |
|
| 2000 |
Buczko R, Duscher G, Pennycook SJ, Pantelides ST. Excitonic effects in core-excitation spectra of semiconductors Physical Review Letters. 85: 2168-2171. DOI: 10.1103/Physrevlett.85.2168 |
0.32 |
|
| 2000 |
Buczko R, Pennycook SJ, Pantelides ST. Bonding Arrangements at the Si-SiO2 and SiC-SiO2 Interfaces and a Possible Origin of their Contrasting Properties Physical Review Letters. 84: 943-946. DOI: 10.1103/Physrevlett.84.943 |
0.348 |
|
| 2000 |
Sohlberg K, Pennycook SJ, Pantelides ST. The bulk and surface structure of γ-Alumina Chemical Engineering Communications. 181: 107-135. DOI: 10.1080/00986440008912818 |
0.561 |
|
| 2000 |
Chung G, Tin CC, Williams JR, McDonald K, Ventra MD, Chanana RK, Pantelides ST, Feldman LC, Weller RA. Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors Applied Physics Letters. 77: 3601-3603. DOI: 10.1063/1.1328370 |
0.316 |
|
| 2000 |
Chung GY, Tin CC, Williams JR, McDonald K, Ventra MD, Pantelides ST, Feldman LC, Weller RA. Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide Applied Physics Letters. 76: 1713-1715. DOI: 10.1063/1.126167 |
0.326 |
|
| 2000 |
Kim M, Duscher G, Browning ND, Pennycook SJ, Sohlberg K, Pantelides ST. The Role of Non-Stoichiometry in the Electrical Activity of Grain Boundaries in SrTiO3 Microscopy and Microanalysis. 6: 184-185. DOI: 10.1017/S1431927600033419 |
0.609 |
|
| 2000 |
Sohlberg K, Pantelides ST, Pennycook SJ. Theoretical proposal: A tunable heterogeneous catalyst Surface Science. 470. DOI: 10.1016/S0039-6028(00)00915-8 |
0.573 |
|
| 2000 |
Di Ventra M, Pantelides ST. Oxygen stability, diffusion, and precipitation in SiC: Implications for thin-film oxidation Journal of Electronic Materials. 29: 353-358. DOI: 10.1007/S11664-000-0076-6 |
0.358 |
|
| 1999 |
Reboredo FA, Pantelides ST. Hydrogen platelets in crystalline silicon - precursors for the `smart cut' Diffusion and Defect Data Pt.B: Solid State Phenomena. 69: 83-92. DOI: 10.4028/Www.Scientific.Net/Ssp.69-70.83 |
0.305 |
|
| 1999 |
Chisholm MF, Buczko R, Mostoller M, Kaplan T, Maiti A, Pantelides ST, Pennycook SJ. Atomic Structure and Properties of Extended Defects in Silicon Solid State Phenomena. 3-14. DOI: 10.4028/Www.Scientific.Net/Ssp.67-68.3 |
0.38 |
|
| 1999 |
Chisholm MF, Maiti A, Pennycook SJ, Pantelides ST. Vacancy formation and vacancy-induced structural transformation in Si grain boundaries Materials Science Forum. 294: 161-164. DOI: 10.4028/Www.Scientific.Net/Msf.294-296.161 |
0.37 |
|
| 1999 |
Duscher G, Buzcko R, Pennycook SJ, Pantelides ST, Müllejans H, Rühle M. Microscopic and Theoretical Investigations of the Si-SiO2 Interface Mrs Proceedings. 592. DOI: 10.1557/Proc-592-15 |
0.39 |
|
| 1999 |
Kim M, Browning ND, Pennyscook SJ, Sohlberg K, Pantelides ST. Z-Contrast STEM Imaging and Ab-Initio Calculations of Grain Boundaries in SrTiO Mrs Proceedings. 586: 37. DOI: 10.1557/Proc-586-37 |
0.661 |
|
| 1999 |
Pennycook SJ, Yan Y, Norman A, Zhang Y, Al-Jassim M, Mascarenhas A, Ahrenkiel SP, Chisholm MF, Duscher G, Pantelides ST. Atomic-Resolution Z-Contrast Imaging and its Application to Compositional Ordering and Segregation Mrs Proceedings. 583. DOI: 10.1557/Proc-583-235 |
0.351 |
|
| 1999 |
Sohlberg K, Pennycook SJ, Pantelides ST. The role of hydrogen in the structure of γ-alumina Materials Research Society Symposium - Proceedings. 549: 165-170. DOI: 10.1557/Proc-549-165 |
0.571 |
|
| 1999 |
Reboredo FA, Ferconi M, Pantelides ST. Theory of the nucleation, growth, and structure of hydrogen-induced extended defects in silicon Physical Review Letters. 82: 4870-4873. DOI: 10.1103/Physrevlett.82.4870 |
0.319 |
|
| 1999 |
Di Ventra M, Pantelides ST. Scanning-tunneling-microscopy images: A fully ab initio approach Physical Review B - Condensed Matter and Materials Physics. 59. DOI: 10.1103/Physrevb.59.R5320 |
0.31 |
|
| 1999 |
Sohlberg K, Pennycook SJ, Pantelides ST. Explanation of the observed dearth of three-coordinated Al on γ-alumina surfaces Journal of the American Chemical Society. 121: 10999-11001. DOI: 10.1021/Ja9926358 |
0.588 |
|
| 1999 |
Sohlberg K, Pennycook SJ, Pantelides ST. Hydrogen and the structure of the transition aluminas Journal of the American Chemical Society. 121: 7493-7499. DOI: 10.1021/Ja991098O |
0.591 |
|
| 1999 |
Pennycook S, Dickey E, Nellist P, Chisholm M, Yan Y, Pantelides S. A Combined Experimental and Theoretical Approach to Atomic Structure and Segregation at Ceramic Interfaces Journal of the European Ceramic Society. 19: 2211-2216. DOI: 10.1016/S0955-2219(99)00126-0 |
0.388 |
|
| 1999 |
Pennycook SJ, Chisholm MF, Yan Y, Duscher G, Pantelides ST. A combined experimental and theoretical approach to grain boundary structure and segregation Physica B-Condensed Matter. 273: 453-457. DOI: 10.1016/S0921-4526(99)00521-9 |
0.375 |
|
| 1999 |
Pantelides ST, Ramamoorthy M. Atomic-scale dynamics during silicon oxidation and the properties of defects at the Si-SiO2 interface Journal of Non-Crystalline Solids. 254: 38-46. DOI: 10.1016/S0022-3093(99)00444-5 |
0.354 |
|
| 1998 |
Pantelides ST, Winkler R, Ferconil M, Alvarez JJV. Nonlinear Response of Solids and Molecules in Intense Infrared Radiation Mrs Proceedings. 538: 453. DOI: 10.1557/Proc-538-453 |
0.305 |
|
| 1998 |
Pantelides ST, Ramamoorthy M. Atomic dynamics during silicon oxidation and the nature of defects at the Si-SiO2 interface Materials Research Society Symposium - Proceedings. 490: 59-70. DOI: 10.1557/Proc-490-59 |
0.37 |
|
| 1998 |
Wang W, Lüpke G, Ventra MD, Pantelides ST, Gilligan JM, Tolk NH, Kizilyalli IC, Roy PK, Margaritondo G, Lucovsky G. Coupled Electron-Hole Dynamics at theSi/SiO2Interface Physical Review Letters. 81: 4224-4227. DOI: 10.1103/Physrevlett.81.4224 |
0.333 |
|
| 1998 |
Yan Y, Chisholm MF, Duscher G, Maiti A, Pennycook SJ, Pantelides ST. Impurity-Induced Structural Transformation of a MgO Grain Boundary Physical Review Letters. 81: 3675-3678. DOI: 10.1103/Physrevlett.81.3675 |
0.341 |
|
| 1998 |
Chisholm MF, Maiti A, Pennycook SJ, Pantelides ST. Atomic configurations and energetics of arsenic impurities in a silicon grain boundary Physical Review Letters. 81: 132-135. DOI: 10.1103/Physrevlett.81.132 |
0.338 |
|
| 1998 |
Ramamoorthy M, Pantelides ST. Enhanced modes of oxygen diffusion in silicon Solid State Communications. 106: 243-248. DOI: 10.1016/S0038-1098(98)00075-1 |
0.303 |
|
| 1997 |
Pantelides ST, Ramamoorthy M, Maiti A, Chisholm MF, Pennycook SJ. Complex diffusive processes in silicon Defect and Diffusion Forum. 971-978. DOI: 10.4028/Www.Scientific.Net/Ddf.143-147.971 |
0.325 |
|
| 1997 |
Maiti A, Chisholm MF, Pennycook SJ, Pantelides ST. Cooperative chemical rebonding in the segregation of impurities in silicon grain boundaries Materials Research Society Symposium - Proceedings. 442: 213-223. DOI: 10.1557/Proc-442-213 |
0.317 |
|
| 1997 |
Winkler R, Pantelides ST. Charge transfer and dipole moments of polyatomic systems Journal of Chemical Physics. 106: 7714-7719. DOI: 10.1063/1.473772 |
0.308 |
|
| 1996 |
Ramamoorthy M, Pantelides ST. Coupled-Barrier diffusion: The case of oxygen in silicon Physical Review Letters. 76: 267-270. DOI: 10.1103/Physrevlett.76.267 |
0.316 |
|
| 1994 |
Pantelides ST, Maroudas D, Laks DB. Defects in heterogeneous solids - from microphysics to macrophysics Materials Science Forum. 143: 1-8. DOI: 10.4028/Www.Scientific.Net/Msf.143-147.1 |
0.346 |
|
| 1994 |
Maroudas D, Pantelides ST. Point defects in crystalline silicon, their migration and their relation to the amorphous phase Chemical Engineering Science. 49: 3001-3014. DOI: 10.1016/0009-2509(94)E0117-9 |
0.353 |
|
| 1993 |
Blöchl PE, Smargiassi E, Car R, Laks DB, Andreoni W, Pantelides ST. First-principles calculations of self-diffusion constants in silicon. Physical Review Letters. 70: 2435-2438. PMID 10053561 DOI: 10.1103/Physrevlett.70.2435 |
0.494 |
|
| 1993 |
Van de Walle CG, Laks DB, Neumark GF, Pantelides ST. First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe. Physical Review. B, Condensed Matter. 47: 9425-9434. PMID 10005009 DOI: 10.1103/Physrevb.47.9425 |
0.331 |
|
| 1993 |
Laks DB, Van de Walle CG, Neumark GF, Pantelides ST. Acceptor doping in ZnSe versus ZnTe Applied Physics Letters. 63: 1375-1377. DOI: 10.1063/1.109681 |
0.332 |
|
| 1992 |
Laks DB, Van de Walle CG, Neumark GF, Blöchl PE, Pantelides ST. Native defects and self-compensation in ZnSe. Physical Review. B, Condensed Matter. 45: 10965-10978. PMID 10001018 DOI: 10.1103/Physrevb.45.10965 |
0.325 |
|
| 1992 |
Walle CGVd, Laks DB, Neumark GF, Pantelides ST. Solubilities, defect reactions and doping limits in ZnSe Journal of Crystal Growth. 117: 704-709. DOI: 10.1016/0022-0248(92)90840-F |
0.307 |
|
| 1991 |
Laks DB, Van de Walle CG, Neumark GF, Pantelides ST. Role of native defects in wide-band-gap semiconductors. Physical Review Letters. 66: 648-651. PMID 10043863 DOI: 10.1103/Physrevlett.66.648 |
0.302 |
|
| 1991 |
Car R, Kelly PJ, Oshiyama A, Pantelides ST. Atomic Diffusion in Silicon Defect and Diffusion Forum. 75: 713-720. DOI: 10.1007/978-1-4615-7682-2_159 |
0.521 |
|
| 1990 |
Denteneer PJH, Walle CGVd, Pantelides ST. Microscopic structure of the hydrogen-phosphorus complex in crystalline silicon Physical Review B. 41: 3885-3888. PMID 9994203 DOI: 10.1103/Physrevb.41.3885 |
0.337 |
|
| 1990 |
Needels M, Joannopoulos J, BAR-YAM Y, Pantelides S, WOLFE R. The Enchanting Properties of Oxygen Atoms in Silicon Mrs Proceedings. 209. DOI: 10.1557/Proc-209-103 |
0.317 |
|
| 1989 |
Denteneer PJH, Walle CGVD, Pantelides ST. Structure and properties of hydrogen-impurity pairs in elemental semiconductors. Physical Review Letters. 62: 1884-1887. PMID 10039795 DOI: 10.1103/Physrevlett.62.1884 |
0.357 |
|
| 1989 |
Denteneer PJH, Walle CGvd, Pantelides ST. Microscopic structure of the hydrogen-boron complex in crystalline silicon Physical Review B. 39: 10809-10824. PMID 9947890 DOI: 10.1103/Physrevb.39.10809 |
0.336 |
|
| 1988 |
Allan DC, Teter MP, Joannopoulos JD, Bar-Yam Y, Pantelides ST. Defect Studies in Silicon Dioxide by Local Density Approximation Total Energy Methods Mrs Proceedings. 141. DOI: 10.1557/Proc-141-255 |
0.325 |
|
| 1988 |
Bernholc J, Antonelli A, Del Sole TM, Bar-Yam Y, Pantelides ST. Mechanism of self-diffusion in diamond Physical Review Letters. 61: 2689-2692. DOI: 10.1103/Physrevlett.61.2689 |
0.553 |
|
| 1987 |
Pantelides ST. Defect Dynamics and the Properties of Amorphous Silicon – a New Perspective Mrs Proceedings. 95: 23. DOI: 10.1557/Proc-95-23 |
0.337 |
|
| 1987 |
Bar-Yam Y, Pantelides ST, Joannopoulos JD, Allan DC, Teter MP. The Oxygen Vacancy and The E1′ Center In SiO2 Mrs Proceedings. 105. DOI: 10.1557/Proc-105-223 |
0.327 |
|
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