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John J. Boeckl, Ph.D. - Publications

Affiliations: 
2005 Ohio State University, Columbus, Columbus, OH 
Area:
Electronics and Electrical Engineering
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41 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Amjadipour M, MacLeod J, Lipton-Duffin J, Tadich A, Boeckl JJ, Iacopi F, Motta N. Electron effective attenuation length in epitaxial graphene on SiC. Nanotechnology. 30: 025704. PMID 30382023 DOI: 10.1088/1361-6528/Aae7Ec  0.367
2019 Mishra N, Bosi M, Rossi F, Salviati G, Boeckl J, Iacopi F. Growth of graphitic carbon layers around silicon carbide nanowires Journal of Applied Physics. 126: 65304. DOI: 10.1063/1.5098987  0.355
2018 Amjadipour M, Tadich A, Boeckl JJ, Lipton-Duffin J, MacLeod J, Iacopi F, Motta N. Quasi free-standing epitaxial graphene fabrication on 3C-SiC/Si(111). Nanotechnology. 29: 145601. PMID 29376834 DOI: 10.1088/1361-6528/Aaab1A  0.493
2017 Ahmed M, Wang B, Gupta B, Boeckl JJ, Motta N, Iacopi F. On-silicon supercapacitors with enhanced storage performance Journal of the Electrochemical Society. 164. DOI: 10.1149/2.0671704Jes  0.346
2017 Mishra N, Boeckl JJ, Tadich A, Jones RT, Pigram PJ, Edmonds M, Fuhrer MS, Nichols BM, Iacopi F. Solid source growth of graphene with Ni–Cu catalysts: towards high quality in situ graphene on silicon Journal of Physics D. 50: 95302. DOI: 10.1088/1361-6463/Aa560B  0.418
2017 Leedy KD, Chabak KD, Vasilyev V, Look DC, Boeckl JJ, Brown JL, Tetlak SE, Green AJ, Moser NA, Crespo A, Thomson DB, Fitch RC, McCandless JP, Jessen GH. Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition Applied Physics Letters. 111: 012103. DOI: 10.1063/1.4991363  0.442
2017 Park J, Back T, Fairchild SB, Mitchel WC, Elhamri S, Boeckl J, Martinotti D, Douillard L, Soukiassian P. Direct graphene growth on transitional metal with solid carbon source and its converting into graphene/transitional metal oxide heterostructure Carbon. 116: 303-309. DOI: 10.1016/J.Carbon.2017.01.072  0.433
2016 Pradeepkumar A, Mishra N, Kermany AR, Boeckl JJ, Hellerstedt J, Fuhrer MS, Iacopi F. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures Applied Physics Letters. 109. DOI: 10.1063/1.4955453  0.381
2016 Jiang J, Pachter R, Demeritte T, Ray PC, Islam AE, Maruyama B, Boeckl JJ. Modeling Graphene with Nanoholes: Structure and Characterization by Raman Spectroscopy with Consideration for Electron Transport Journal of Physical Chemistry C. 120: 5371-5383. DOI: 10.1021/Acs.Jpcc.5B10225  0.385
2016 Mishra N, Boeckl J, Motta N, Iacopi F. Graphene growth on silicon carbide: A review (Phys. Status Solidi A 9/2016) Physica Status Solidi (a). 213: 2269-2269. DOI: 10.1002/Pssa.201670657  0.352
2016 Mishra N, Boeckl J, Motta N, Iacopi F. Graphene growth on silicon carbide: A review Physica Status Solidi (a). 213: 2277-2289. DOI: 10.1002/Pssa.201600091  0.384
2015 Ahmed M, Khawaja M, Notarianni M, Wang B, Goding D, Gupta B, Boeckl JJ, Takshi A, Motta N, Saddow SE, Iacopi F. A thin film approach for SiC-derived graphene as an on-chip electrode for supercapacitors. Nanotechnology. 26: 434005. PMID 26447742 DOI: 10.1088/0957-4484/26/43/434005  0.43
2015 Park J, Back T, Mitchel WC, Kim SS, Elhamri S, Boeckl J, Fairchild SB, Naik R, Voevodin AA. Approach to multifunctional device platform with epitaxial graphene on transition metal oxide. Scientific Reports. 5: 14374. PMID 26395160 DOI: 10.1038/Srep14374  0.39
2015 Iacopi F, Mishra N, Cunning BV, Goding D, Dimitrijev S, Brock R, Dauskardt RH, Wood B, Boeckl J. A catalytic alloy approach for graphene on epitaxial SiC on silicon wafers Journal of Materials Research. 30: 609-616. DOI: 10.1557/Jmr.2015.3  0.415
2015 Bachmatiuk A, Boeckl J, Smith H, Ibrahim I, Gemming T, Oswald S, Kazmierczak W, Makarov D, Schmidt OG, Eckert J, Fu L, Rummeli MH. Vertical Graphene Growth from Amorphous Carbon Films Using Oxidizing Gases Journal of Physical Chemistry C. 119: 17965-17970. DOI: 10.1021/Acs.Jpcc.5B05167  0.399
2013 Mehmood F, Pachter R, Lu W, Boeckl JJ. Adsorption and diffusion of oxygen on single-layer graphene with topological defects Journal of Physical Chemistry C. 117: 10366-10374. DOI: 10.1021/Jp312159V  0.329
2012 Lu W, Barbosa R, Clarke E, Eyink K, Grazulis L, Mitchel WC, Boeckl JJ. Interface oxidative structural transitions in graphene growth on SiC (0001) Journal of Physical Chemistry C. 116: 15342-15347. DOI: 10.1021/Jp301996H  0.406
2011 Mou S, Boeckl JJ, Grazulis L, Claflin B, Lu W, Park JH, Mitchel WC. Comparison of epitaxial graphene on Si-face and C-face 6H-SiC Materials Research Society Symposium Proceedings. 1284: 51-58. DOI: 10.1557/Opl.2011.643  0.415
2011 Mitchel WC, Boeckl JJ, Park J. Growth of carbon-based nanostructures Proceedings of Spie - the International Society For Optical Engineering. 8031. DOI: 10.1117/12.884651  0.353
2011 Park J, Mitchel WC, Brown GJ, Elhamri S, Grazulis L, Smith HE, Pacley SD, Boeckl JJ, Eyink KG, Mou S, Tomich DH, Hoelscher JE. Band gap formation in graphene by in-situ doping Applied Physics Letters. 98. DOI: 10.1063/1.3589364  0.409
2010 Boeckl J, Mitchel WC, Clarke E, Barbosa RL, Lu WJ. Structural Evaluation of Graphene/SiC (0001) Grown in Atmospheric Pressure Materials Science Forum. 573-576. DOI: 10.4028/Www.Scientific.Net/Msf.645-648.573  0.361
2010 Lu W, Boeckl JJ, Mitchel WC. A critical review of growth of low-dimensional carbon nanostructures on SiC (0001): Impact of growth environment Journal of Physics D: Applied Physics. 43. DOI: 10.1088/0022-3727/43/37/374004  0.388
2009 Kozlowski G, Kleismit R, Boeckl J, Campbell A, Munbodh K, Hopkins S, Koziol K, Peterson T. Electromagnetic characterization of carbon nanotube films by a two-point evanescent microwave method Physica E: Low-Dimensional Systems and Nanostructures. 41: 1539-1544. DOI: 10.1016/J.Physe.2009.04.034  0.324
2009 Shivaraman S, Chandrashekhar MVS, Boeckl JJ, Spencer MG. Thickness estimation of epitaxial graphene on sic using attenuation of substrate raman intensity Journal of Electronic Materials. 38: 725-730. DOI: 10.1007/S11664-009-0803-6  0.41
2009 Lu W, Mitchel WC, Boeckl JJ, Crenshaw TR, Collins WE, Chang RPH, Feldman LC. Growth of graphene-like structures on an oxidized sic surface Journal of Electronic Materials. 38: 731-736. DOI: 10.1007/S11664-009-0715-5  0.406
2007 Harrison J, Sambandam SN, Boeckl JJ, Mitchel WC, Collins WE, Lu W. Evaluation of metal-free carbon nanotubes formed by SiC thermal decomposition Journal of Applied Physics. 101. DOI: 10.1063/1.2732547  0.377
2006 Boeckl J, Mitchel WC, Lu WJ, Rigueur J. Structural and Electrical Characteristics of Carbon Nanotubes Formed on Silicon Carbide Substrates by Surface Decomposition Materials Science Forum. 1579-1582. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1579  0.409
2006 Lu WJ, Boeckl J, Mitchel WC, Rigueur J, Collins WE. Role of oxygen in growth of carbon nanotubes on SiC Materials Science Forum. 1575-1578. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.1575  0.323
2006 Kwon O, Boeckl JJ, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy Journal of Applied Physics. 100. DOI: 10.1063/1.2209068  0.676
2005 Andre CL, Carlin JA, Boeckl JJ, Wilt DM, Smith MA, Pitera AJ, Lee ML, Fitzgerald EA, Ringel SA. Investigations of high-performance GaAs solar cells grown on Ge-Si1-xGex-Si substrates Ieee Transactions On Electron Devices. 52: 1055-1060. DOI: 10.1109/Ted.2005.848117  0.719
2005 Kwon O, Boeckl J, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Growth and properties of AlGaInP resonant cavity light emitting diodes on Ge/SiGe/Si substrates Journal of Applied Physics. 97. DOI: 10.1063/1.1835539  0.715
2004 Look DC, Fang ZQ, Soloviev S, Sudarshan TS, Boeckl JJ. Anomalous capture and emission from internal surfaces of semiconductor voids: Nanopores in SiC Physical Review B - Condensed Matter and Materials Physics. 69. DOI: 10.1103/Physrevb.69.195205  0.344
2004 Andre CL, Boeckl JJ, Wilt DM, Pitera AJ, Lee ML, Fitzgerald EA, Keyes BM, Ringel SA. Impact of dislocations on minority carrier electron and hole lifetimes in GaAs grown on metamorphic SiGe substrates Applied Physics Letters. 84: 3447-3449. DOI: 10.1063/1.1736318  0.734
2003 Mier M, Boeckl J, Roth MD, Balkas CM, Nelson M. Simple Method for Mapping Optical Defects in Insulating Silicon Carbide Wafers Materials Science Forum. 357-360. DOI: 10.4028/Www.Scientific.Net/Msf.433-436.357  0.322
2003 Kwon O, Boeckl J, Lee ML, Pitera AJ, Fitzgerald EA, Ringel SA. Growth and properties of AlGaInP resonant cavity light emitting diodes (RCLEDs) on Ge/SiGe/Si substrates Materials Research Society Symposium - Proceedings. 799: 161-166. DOI: 10.1557/Proc-799-Z3.4  0.684
2003 Andre CL, Boeckl JJ, Leitz CW, Currie MT, Langdo TA, Fitzgerald EA, Ringel SA. Low-temperature GaAs films grown on Ge and Ge/SiGe/Si substrates Journal of Applied Physics. 94: 4980-4985. DOI: 10.1063/1.1610243  0.754
2002 Mier MG, Boeckl JJ, Hill DA, Bertrand SD, Ramakrishnan E, Roth MD, Balkas C, Nelson MP. Whole-wafer optical mapping of defects in insulating silicon carbide wafers Materials Research Society Symposium - Proceedings. 742: 127-130. DOI: 10.1557/Proc-742-K2.16  0.372
2001 Hierro A, Hansen M, Boeckl JJ, Zhao L, Speck JS, Mishra UK, DenBaars SP, Ringel SA. Carrier trapping and recombination at point defects and dislocations in MOCVD n-GaN Physica Status Solidi (B) Basic Research. 228: 937-946. DOI: 10.1002/1521-3951(200112)228:3<937::AID-PSSB937>3.0.CO;2-T  0.685
1999 Kwon D, Kaplar RJ, Boeckl JJ, Ringel SA, Allerman AA, Kurtz SR, Jones ED. Deep level defect studies in MOCVD-grown InxGa1-xAs1-yNy films lattice-matched to GaAs Materials Research Society Symposium - Proceedings. 535: 59-64. DOI: 10.1557/Proc-535-59  0.709
1999 Xu Q, Hsu JWP, Carlin JA, Sieg RM, Boeckl JJ, Ringel SA. Topographic and electronic studies of wedge-shape surface defects on AiGaAs/GaAs films grown on ge substrates Applied Physics Letters. 75: 2111-2113. DOI: 10.1063/1.124933  0.701
1998 Sieg RM, Carlin JA, Boeckl JJ, Ringel SA, Currie MT, Ting SM, Langdo TA, Taraschi G, Fitzgerald EA, Keyes BM. High minority-carrier lifetimes in GaAs grown on low-defect-density Ge/GeSi/Si substrates Applied Physics Letters. 73: 3111-3113. DOI: 10.1063/1.122689  0.743
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