Year |
Citation |
Score |
2020 |
Ranga P, Bhattacharyya A, Rishinaramangalam A, Ooi YK, Scarpulla MA, Feezell D, Krishnamoorthy S. Delta-doped β-Ga2O3 thin films and β-(Al0.26Ga0.74)2O3/β-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy Applied Physics Express. 13: 045501. DOI: 10.35848/1882-0786/Ab7712 |
0.346 |
|
2020 |
Bhattacharyya A, Ranga P, Saleh M, Roy S, Scarpulla MA, Lynn KG, Krishnamoorthy S. Schottky Barrier Height Engineering in β-Ga2O3 Using SiO2 Interlayer Dielectric Ieee Journal of the Electron Devices Society. 8: 286-294. DOI: 10.1109/Jeds.2020.2974260 |
0.33 |
|
2020 |
Sun R, Ooi YK, Dickens PT, Lynn KG, Scarpulla MA. On the origin of red luminescence from iron-doped β-Ga2O3 bulk crystals Applied Physics Letters. 117: 52101. DOI: 10.1063/5.0012967 |
0.309 |
|
2020 |
Nagaoka A, Nishioka K, Yoshino K, Katsube R, Nose Y, Masuda T, Scarpulla MA. Comparison of Sb, As, and P doping in Cd-rich CdTe single crystals: Doping properties, persistent photoconductivity, and long-term stability Applied Physics Letters. 116: 132102. DOI: 10.1063/5.0004883 |
0.668 |
|
2020 |
Arnou P, Lomuscio A, Weiss TP, Siopa D, Giraldo S, Saucedo E, Scarpulla MA, Dale PJ. Continuous-wave laser annealing of metallic layers for CuInSe2 solar cell applications: effect of preheating treatment on grain growth Rsc Advances. 10: 584-594. DOI: 10.1039/C9Ra06896A |
0.32 |
|
2020 |
Nagaoka A, Nishioka K, Yoshino K, Kuciauskas D, Scarpulla MA. Growth and Characterization of Arsenic-Doped CdTe 1−x Se x Single Crystals Grown by the Cd-Solvent Traveling Heater Method Journal of Electronic Materials. 1-6. DOI: 10.1007/S11664-020-08343-Z |
0.684 |
|
2019 |
Chanana A, Loftizadeh N, Condori Quispe HO, Gopalan P, Winger JR, Blair S, Nahata A, Deshpande VV, Scarpulla MA, Sensale-Rodriguez B. Manifestation of Kinetic Inductance in Terahertz Plasmon Resonances in Thin-Film CdAs. Acs Nano. PMID 30865427 DOI: 10.1021/Acsnano.8B08649 |
0.331 |
|
2019 |
Nagaoka A, Nishioka K, Yoshino K, Kuciauskas D, Scarpulla MA. Erratum: “Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV” [Appl. Phys. Express 12, 081002 (2019)] Applied Physics Express. 12: 089401. DOI: 10.7567/1882-0786/Ab30C3 |
0.622 |
|
2019 |
Nagaoka A, Nishioka K, Yoshino K, Kuciauskas D, Scarpulla MA. Arsenic doped Cd-rich CdTe: equilibrium doping limit and long lifetime for high open-circuit voltage solar cells greater than 900 mV Applied Physics Express. 12: 081002. DOI: 10.7567/1882-0786/Ab27Fb |
0.654 |
|
2019 |
Gopalan P, Chanana A, Krishnamoorthy S, Nahata A, Scarpulla MA, Sensale-Rodriguez B. Ultrafast THz modulators with WSe2 thin films [Invited] Optical Materials Express. 9: 826. DOI: 10.1364/Ome.9.000826 |
0.383 |
|
2019 |
Misra S, Aguiar JA, Sun Y, Devener Bv, Palekis V, Ferekides CS, Yoon HP, Bermel P, Scarpulla MA. Observation and Implications of Composition Inhomogeneity Along Grain Boundaries in Thin Film Polycrystalline CdTe Photovoltaic Devices Advanced Materials Interfaces. 6: 1900152. DOI: 10.1002/Admi.201900152 |
0.313 |
|
2018 |
Wang Y, Dickens PT, Varley JB, Ni X, Lotubai E, Sprawls S, Liu F, Lordi V, Krishnamoorthy S, Blair S, Lynn KG, Scarpulla M, Sensale-Rodriguez B. Incident wavelength and polarization dependence of spectral shifts in β-GaO UV photoluminescence. Scientific Reports. 8: 18075. PMID 30584263 DOI: 10.1038/S41598-018-36676-7 |
0.31 |
|
2018 |
Han KB, Chong SK, Oliynyk AO, Nagaoka A, Petryk S, Scarpulla MA, Deshpande VV, Sparks TD. Enhancement in surface mobility and quantum transport of BiSbTeSe topological insulator by controlling the crystal growth conditions. Scientific Reports. 8: 17290. PMID 30470769 DOI: 10.1038/S41598-018-35674-Z |
0.638 |
|
2018 |
Tse K, Wong M, Zhang Y, Zhang J, Scarpulla M, Zhu J. Defect properties of Na and K in Cu2ZnSnS4 from hybrid functional calculation Journal of Applied Physics. 124: 165701. DOI: 10.1063/1.5046734 |
0.311 |
|
2018 |
Nagaoka A, Kuciauskas D, McCoy J, Scarpulla MA. High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals Applied Physics Letters. 112: 192101. DOI: 10.1063/1.5029450 |
0.682 |
|
2018 |
Alberi K, Scarpulla MA. Effects of excess carriers on charged defect concentrations in wide bandgap semiconductors Journal of Applied Physics. 123: 185702. DOI: 10.1063/1.5010945 |
0.681 |
|
2018 |
Sun R, Zhuang D, Zhao M, Gong Q, Scarpulla M, Wei Y, Ren G, Wu Y. Beyond 11% efficient Cu2ZnSn(Se,S)4 thin film solar cells by cadmium alloying Solar Energy Materials and Solar Cells. 174: 494-498. DOI: 10.1016/J.Solmat.2017.09.043 |
0.333 |
|
2018 |
Kheraj V, Simonds BJ, Toshniwal A, Misra S, Peroncik P, Zhang C, Vardeny Z, Scarpulla MA. Using photoluminescence to monitor the optoelectronic properties of methylammonium lead halide perovskites in light and dark over periods of days Journal of Luminescence. 194: 353-358. DOI: 10.1016/J.Jlumin.2017.10.021 |
0.365 |
|
2017 |
Alberi K, Scarpulla MA. Photoassisted physical vapor epitaxial growth of semiconductors: a review of light-induced modifications to growth processes Journal of Physics D: Applied Physics. 51: 023001. DOI: 10.1088/1361-6463/Aa944C |
0.688 |
|
2017 |
Nagaoka A, Kuciauskas D, Scarpulla MA. Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior Applied Physics Letters. 111: 232103. DOI: 10.1063/1.4999011 |
0.673 |
|
2017 |
Kosyak V, Postnikov AV, Scragg J, Scarpulla MA, Platzer-Björkman C. Calculation of point defect concentration in Cu2ZnSnS4: Insights into the high-temperature equilibrium and quenching Journal of Applied Physics. 122: 35707. DOI: 10.1063/1.4994689 |
0.309 |
|
2017 |
Meadows HJ, Misra S, Simonds BJ, Kurihara M, Schuler T, Reis-Adonis V, Bhatia A, Scarpulla MA, Dale PJ. Laser annealing of electrodeposited CuInSe2 semiconductor precursors: experiment and modeling Journal of Materials Chemistry C. 5: 1336-1345. DOI: 10.1039/C6Tc03623F |
0.554 |
|
2017 |
Nagaoka A, Han K, Misra S, Wilenski T, Sparks TD, Scarpulla MA. Growth and characterization of Arsenic doped CdTe single crystals grown by Cd-solvent traveling-heater method Journal of Crystal Growth. 467: 6-11. DOI: 10.1016/J.Jcrysgro.2017.03.002 |
0.642 |
|
2017 |
Pruzan DS, Caruso AE, Liu Y, Lin Y, Beall C, Repins I, Toney MF, Scarpulla MA. Front Cover: Solar RRL 1∕2017 Solar Rrl. 1. DOI: 10.1002/solr.201770001 |
0.325 |
|
2016 |
Scarpulla M, Misra S. Laser annealing in thin-film chalcogenide photovoltaics Spie Newsroom. DOI: 10.1117/2.1201609.006368 |
0.359 |
|
2016 |
Erkan ME, Chawla V, Scarpulla MA. Reduced defect density at the CZTSSe/CdS interface by atomic layer deposition of Al2O3 Journal of Applied Physics. 119. DOI: 10.1063/1.4948947 |
0.338 |
|
2016 |
Simonds BJ, Misra S, Paudel N, Vandewal K, Salleo A, Ferekides C, Scarpulla MA. Near infrared laser annealing of CdTe and in-situ measurement of the evolution of structural and optical properties Journal of Applied Physics. 119. DOI: 10.1063/1.4947186 |
0.379 |
|
2016 |
Alberi K, Scarpulla MA. Suppression of compensating native defect formation during semiconductor processing via excess carriers Scientific Reports. 6. DOI: 10.1038/Srep27954 |
0.685 |
|
2016 |
Nagaoka A, Scarpulla MA, Yoshino K. Na-doped Cu2ZnSnS4 single crystal grown by traveling-heater method Journal of Crystal Growth. 453: 119-123. DOI: 10.1016/J.Jcrysgro.2016.08.014 |
0.656 |
|
2016 |
Pruzan DS, Caruso AE, Liu Y, Lin Y, Beall C, Repins I, Toney MF, Scarpulla MA. Cu2
ZnSnSe4
Photovoltaic Absorber Layers Evaluated by Transmission X-Ray Microscopy Tomography: Composition Fluctuations on the Length Scale of Grains Solar Rrl. 1: 1600024. DOI: 10.1002/SOLR.201600024 |
0.4 |
|
2016 |
Aguiar JA, Erkan ME, Pruzan DS, Nagaoka A, Yoshino K, Moutinho H, Al-Jassim M, Scarpulla MA. Cation ratio fluctuations in Cu2ZnSnS4 at the 20nm length scale investigated by analytical electron microscopy Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/Pssa.201600060 |
0.672 |
|
2015 |
Nowell MM, Scarpulla MA, Paudel NR, Wieland KA, Compaan AD, Liu X. Characterization of Sputtered CdTe Thin Films with Electron Backscatter Diffraction and Correlation with Device Performance. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 21: 927-35. PMID 26077102 DOI: 10.1017/S143192761500077X |
0.317 |
|
2015 |
Simonds BJ, Meadows HJ, Misra S, Ferekides C, Dale PJ, Scarpulla MA. Laser processing for thin film chalcogenide photovoltaics: A review and prospectus Journal of Photonics For Energy. 5. DOI: 10.1117/1.Jpe.5.050999 |
0.407 |
|
2015 |
Pruzan DS, Caruso AE, Liu Y, Lin Y, Beall C, Repins I, Toney MF, Scarpulla MA. Sub-100 nm resolution 3-D tomography of CZTSe using transmission X-ray Microscopy 2015 Ieee 42nd Photovoltaic Specialist Conference, Pvsc 2015. DOI: 10.1109/PVSC.2015.7355781 |
0.44 |
|
2015 |
Simonds BJ, Kheraj V, Palekis V, Ferekides C, Scarpulla MA. Reduction of Fermi level pinning and recombination at polycrystalline CdTe surfaces by laser irradiation Journal of Applied Physics. 117. DOI: 10.1063/1.4921950 |
0.339 |
|
2015 |
Meadows HJ, Regesch D, Thevenin M, Sendler J, Schuler T, Misra S, Simonds BJ, Scarpulla MA, Gerliz V, Gütay L, Guillot J, Dale PJ. CuInSe2semiconductor formation by laser annealing Thin Solid Films. 582: 23-26. DOI: 10.1016/J.Tsf.2014.10.042 |
0.391 |
|
2015 |
Erkan ME, Chawla V, Repins I, Scarpulla MA. Interplay between surface preparation and device performance in CZTSSe solar cells: Effects of KCN and NH4OH etching Solar Energy Materials and Solar Cells. 136: 78-85. DOI: 10.1016/J.Solmat.2015.01.006 |
0.353 |
|
2015 |
Nagaoka A, Katsube R, Nakatsuka S, Yoshino K, Taniyama T, Miyake H, Kakimoto K, Scarpulla MA, Nose Y. Growth and characterization of Cu<inf>2</inf>ZnSn(S<inf>x</inf> Se<inf>1-x</inf>)<inf>4</inf> single crystal grown by traveling heater method Journal of Crystal Growth. 423: 9-15. DOI: 10.1016/J.Jcrysgro.2015.04.012 |
0.678 |
|
2014 |
Simonds BJ, Palekis V, Van Devener B, Ferekides C, Scarpulla MA. Surface stoichiometry of pulsed ultraviolet laser treated polycrystalline CdTe Journal of Applied Physics. 116. DOI: 10.1063/1.4887079 |
0.347 |
|
2014 |
Lund EA, Du H, Hlaing Oo WM, Teeter G, Scarpulla MA. Investigation of combinatorial coevaporated thin film Cu 2ZnSnS4 (II): Beneficial cation arrangement in Cu-rich growth Journal of Applied Physics. 115. DOI: 10.1063/1.4871665 |
0.325 |
|
2014 |
Du H, Yan F, Young M, To B, Jiang CS, Dippo P, Kuciauskas D, Chi Z, Lund EA, Hancock C, Hlaing Oo WM, Scarpulla MA, Teeter G. Investigation of combinatorial coevaporated thin film Cu 2ZnSnS4. I. Temperature effect, crystalline phases, morphology, and photoluminescence Journal of Applied Physics. 115. DOI: 10.1063/1.4871664 |
0.404 |
|
2014 |
Nagaoka A, Miyake H, Taniyama T, Kakimoto K, Nose Y, Scarpulla MA, Yoshino K. Effects of sodium on electrical properties in Cu2ZnSnS 4 single crystal Applied Physics Letters. 104. DOI: 10.1063/1.4871208 |
0.654 |
|
2014 |
Simonds BJ, Palekis V, Van Devener B, Ferekides C, Scarpulla MA. Pulsed laser induced ohmic back contact in CdTe solar cells Applied Physics Letters. 104. DOI: 10.1063/1.4870838 |
0.338 |
|
2014 |
Meadows HJ, Bhatia A, Depredurand V, Guillot J, Regesch D, Malyeyev A, Colombara D, Scarpulla MA, Siebentritt S, Dale PJ. Single second laser annealed CuInSe2 semiconductors from electrodeposited precursors as absorber layers for solar cells Journal of Physical Chemistry C. 118: 1451-1460. DOI: 10.1021/Jp409804S |
0.596 |
|
2014 |
Nagaoka A, Nose Y, Miyake H, Scarpulla MA, Yoshino K. Solution growth of chalcopyrite compounds single crystal Renewable Energy. DOI: 10.1016/J.Renene.2014.10.015 |
0.659 |
|
2013 |
Lund EA, Scarpulla MA. Modeling Cu2ZnSnS4 (CZTS) solar cells with kesterite and stannite phase variation Proceedings of Spie - the International Society For Optical Engineering. 8620. DOI: 10.1117/12.2012401 |
0.323 |
|
2013 |
Kosyak V, Mortazavi Amiri NB, Postnikov AV, Scarpulla MA. Model of native point defect equilibrium in Cu2ZnSnS4 and application to one-zone annealing Journal of Applied Physics. 114. DOI: 10.1063/1.4819206 |
0.334 |
|
2013 |
Bhatia A, Meadows H, Crossay A, Dale PJ, Scarpulla MA. Continuous wave solid phase laser annealing of single-pot electrodeposited CuInSe2 thin films: Effects of Cu/In stoichiometry Journal of Applied Physics. 114. DOI: 10.1063/1.4816250 |
0.615 |
|
2013 |
Nagel JR, Scarpulla MA. Enhanced light absorption in thin film solar cells with embedded dielectric nanoparticles: Induced texture dominates Mie scattering Applied Physics Letters. 102. DOI: 10.1063/1.4802718 |
0.707 |
|
2013 |
Bhatia A, Meadows H, Hlaing Oo WM, Dale PJ, Scarpulla MA. Effects of pulsed laser annealing on deep level defects in electrochemically-deposited and furnace annealed CuInSe2 thin films Thin Solid Films. 531: 566-571. DOI: 10.1016/J.Tsf.2012.12.076 |
0.604 |
|
2013 |
Lee S, Scarpulla MA, Bamberg E. Effect of metal coating on machinability of high purity germanium using wire electrical discharge machining Journal of Materials Processing Technology. 213: 811-817. DOI: 10.1016/J.Jmatprotec.2012.12.008 |
0.32 |
|
2013 |
Nagel JR, Scarpulla MA. Design principles for light trapping in thin silicon films with embedded dielectric nanoparticles Progress in Photovoltaics: Research and Applications. 21: 319-325. DOI: 10.1002/Pip.1187 |
0.71 |
|
2012 |
Nagel JR, Scarpulla MA. Equivalent deflection angle of textured surfaces Conference Record of the Ieee Photovoltaic Specialists Conference. 2575-2577. DOI: 10.1109/PVSC.2012.6318121 |
0.679 |
|
2012 |
Kosyak V, Karmarkar MA, Scarpulla MA. Temperature dependent conductivity of polycrystalline Cu 2ZnSnS 4 thin films Applied Physics Letters. 100. DOI: 10.1063/1.4731875 |
0.358 |
|
2012 |
Lund EA, Scarpulla MA. Photovoltaic heterojunctions of inorganic semiconductors in the defective limit Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 177: 1436-1440. DOI: 10.1016/J.Mseb.2012.02.015 |
0.38 |
|
2012 |
Bhatia A, Hlaing Oo WM, Siegel G, Stone PR, Yu KM, Scarpulla MA. Synthesis of Ge 1-xSn x alloy thin films using ion implantation and pulsed laser melting (II-PLM) Journal of Electronic Materials. 41: 837-844. DOI: 10.1007/S11664-012-2011-Z |
0.64 |
|
2011 |
Nagel JR, Blair S, Scarpulla MA. Exact field solution to guided wave propagation in lossy thin films. Optics Express. 19: 20159-71. PMID 21997027 DOI: 10.1117/12.910168 |
0.694 |
|
2011 |
Nagel JR, Scarpulla MA. Enhanced light absorption in thin-film silicon solar cells by scattering from embedded dielectric nanoparticles Conference Record of the Ieee Photovoltaic Specialists Conference. 000911-000916. DOI: 10.1109/PVSC.2011.6186100 |
0.7 |
|
2011 |
Toledo NG, Cruz SC, Neufeld CJ, Lang JR, Scarpulla MA, Buehl T, Gossard AC, Denbaars SP, Speck JS, Mishra UK. Integrated non-III-nitride/III-nitride tandem solar cell Device Research Conference - Conference Digest, Drc. 265-266. DOI: 10.1109/DRC.2011.5994525 |
0.321 |
|
2011 |
Hartman K, Johnson JL, Bertoni MI, Recht D, Aziz MJ, Scarpulla MA, Buonassisi T. SnS thin-films by RF sputtering at room temperature Thin Solid Films. 519: 7421-7424. DOI: 10.1016/J.Tsf.2010.12.186 |
0.379 |
|
2011 |
Hlaing Oo WM, Johnson JL, Bhatia A, Lund EA, Nowell MM, Scarpulla MA. Grain size and texture of Cu 2ZnSnS 4 thin films synthesized by cosputtering binary sulfides and annealing: Effects of processing conditions and sodium Journal of Electronic Materials. 40: 2214-2221. DOI: 10.1007/S11664-011-1729-3 |
0.608 |
|
2010 |
Nagel JR, Scarpulla MA. Enhanced absorption in optically thin solar cells by scattering from embedded dielectric nanoparticles. Optics Express. 18: A139-46. PMID 20588582 DOI: 10.1364/Oe.18.00A139 |
0.707 |
|
2010 |
Stone PR, Dubon OD, Scarpulla MA, Yu KM. Ga1-xMnxP synthesized by ion implantation and pulsed-laser melting Handbook of Spintronic Semiconductors. 157-180. DOI: 10.4032/9789814267670 |
0.654 |
|
2010 |
Bhatia A, Dale PJ, Nowell MM, Scarpulla MA. Pulsed laser processing of electrodeposited CuInSe2 photovoltaic absorber thin films Materials Research Society Symposium Proceedings. 1268: 103-108. DOI: 10.1557/Proc-1268-Ee04-10 |
0.567 |
|
2010 |
Nukala H, Johnson JL, Bhatia A, Lund EA, Hlaing Oo WM, Nowell MM, Rieth LW, Scarpulla MA. Synthesis of optimized CZTS thin films for photovoltaic absorber layers by sputtering from sulfide targets and sulfurization Materials Research Society Symposium Proceedings. 1268: 91-96. DOI: 10.1557/Proc-1268-Ee03-04 |
0.588 |
|
2010 |
Johnson JL, Nukala H, Lund EA, Hlaing Oo WM, Bhatia A, Rieth LW, Scarpulla MA. Effects of 2nd phases, stress, and Na at the Mo/Cu 2ZnSnS4 interface Materials Research Society Symposium Proceedings. 1268: 85-90. DOI: 10.1557/Proc-1268-Ee03-03 |
0.569 |
|
2010 |
Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC. Probing semiconductor band structures and heterojunction interface properties with ballistic carrier emission: GaAs/ Alx Ga 1-x As as a model system Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.235325 |
0.503 |
|
2010 |
Kim T, Pillai MR, Aziz MJ, Scarpulla MA, Dubon OD, Yu KM, Beeman JW, Ridgway MC. Heat flow model for pulsed laser melting and rapid solidification of ion implanted GaAs Journal of Applied Physics. 108. DOI: 10.1063/1.3457106 |
0.549 |
|
2010 |
Buehl TE, Lebeau JM, Stemmer S, Scarpulla MA, Palmstrøm CJ, Gossard AC. Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy Journal of Crystal Growth. 312: 2089-2092. DOI: 10.1016/J.Jcrysgro.2010.04.031 |
0.767 |
|
2010 |
Zhou YY, Liu X, Furdyna JK, Scarpulla MA, Dubon OD. Ferromagnetic resonance study of Ga 1-x Mn x As fabricated on (311) GaAs wafers by Mn ion implantation and pulsed-laser melting Journal of Superconductivity and Novel Magnetism. 23: 87-90. DOI: 10.1007/S10948-009-0539-9 |
0.662 |
|
2009 |
Acbas G, Kim MH, Cukr M, Novák V, Scarpulla MA, Dubon OD, Jungwirth T, Sinova J, Cerne J. Electronic structure of ferromagnetic semiconductor Ga_{1-x}Mn_{x}As probed by subgap magneto-optical spectroscopy. Physical Review Letters. 103: 137201. PMID 19905537 DOI: 10.1103/Physrevlett.103.137201 |
0.629 |
|
2009 |
Zhou YY, Liu X, Furdyna JK, Scarpulla MA, Dubon OD. Ferromagnetic resonance investigation of magnetic anisotropy in Ga 1-x Mnx As synthesized by ion implantation and pulsed laser melting Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.224403 |
0.672 |
|
2009 |
Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC, Huang Y, Ryou JH, Dupuis RD. Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy Applied Physics Letters. 95. DOI: 10.1063/1.3224914 |
0.475 |
|
2009 |
Scarpulla MA, Gallinat CS, Mack S, Speck JS, Gossard AC. GdN (1 1 1) heteroepitaxy on GaN (0 0 0 1) by N2 plasma and NH3 molecular beam epitaxy Journal of Crystal Growth. 311: 1239-1244. DOI: 10.1016/J.Jcrysgro.2008.12.050 |
0.716 |
|
2008 |
Stone PR, Bihler C, Kraus M, Scarpulla MA, Beeman JW, Yu KM, Brandt MS, Dubon OD. Compensation-dependent in-plane magnetization reversal processes in Ga 1-xMnxP1-ySy Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.214421 |
0.717 |
|
2008 |
Cho YJ, Scarpulla MA, Zhou YY, Ge Z, Liu X, Dobrowolska M, Yu KM, Dubon OD, Furdyna JK. Magnetic anisotropy of ferromagnetic Ga1-xMnxAs formed by Mn ion implantation and pulsed-laser melting Journal of Applied Physics. 104. DOI: 10.1063/1.2966598 |
0.643 |
|
2008 |
Bihler C, Kraus M, Brandt MS, Goennenwein STB, Opel M, Scarpulla MA, Farshchi R, Estrada DM, Dubon OD. Suppression of hole-mediated ferromagnetism in Ga1-xMn xP by hydrogen Journal of Applied Physics. 104. DOI: 10.1063/1.2952045 |
0.787 |
|
2008 |
Scarpulla MA, Stone PR, Sharp ID, Haller EE, Dubon OD, Beeman JW, Yu KM. Nonmagnetic compensation in ferromagnetic Ga1-x Mnx As and Ga1-xMnx P synthesized by ion implantation and pulsed-laser melting Journal of Applied Physics. 103. DOI: 10.1063/1.2940361 |
0.76 |
|
2008 |
Scarpulla MA, Zide JMO, LeBeau JM, Van De Walle CG, Gossard AC, Delaney KT. Near-infrared absorption and semimetal-semiconductor transition in 2 nm ErAs nanoparticles embedded in GaAs and AlAs Applied Physics Letters. 92. DOI: 10.1063/1.2908213 |
0.489 |
|
2008 |
Scarpulla MA, Farshchi R, Stone PR, Chopdekar RV, Yu KM, Suzuki Y, Dubon OD. Electrical transport and ferromagnetism in Ga1-x Mnx As synthesized by ion implantation and pulsed-laser melting Journal of Applied Physics. 103. DOI: 10.1063/1.2890411 |
0.807 |
|
2007 |
Kim M, Acbas G, Yang M, Ohkubo I, Christen H, Mandrus D, Scarpulla MA, Dubon OD, Schlesinger Z, Khalifah P, Cerne J. Publisher's Note: Determination of the infrared complex magnetoconductivity tensor in itinerant ferromagnets from Faraday and Kerr measurements [Phys. Rev. B75, 214416 (2007)] Physical Review B. 76. DOI: 10.1103/Physrevb.76.149901 |
0.535 |
|
2007 |
Bihler C, Kraus M, Huebl H, Brandt MS, Goennenwein STB, Opel M, Scarpulla MA, Stone PR, Farshchi R, Dubon OD. Magnetocrystalline anisotropy and magnetization reversal in Ga1-x Mnx P synthesized by ion implantation and pulsed-laser melting Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.214419 |
0.802 |
|
2007 |
Kim MH, Acbas G, Yang MH, Ohkubo I, Christen H, Mandrus D, Scarpulla MA, Dubon OD, Schlesinger Z, Khalifah P, Cerne J. Determination of the infrared complex magnetoconductivity tensor in itinerant ferromagnets from Faraday and Kerr measurements Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.214416 |
0.588 |
|
2007 |
Cho YJ, Scarpulla MA, Liu X, Zhou YY, Dubon OD, Furdyna JK. Magnetic cluster phases of Mn-interstitial-free (Ga,Mn)As Aip Conference Proceedings. 893: 1221-1222. DOI: 10.1063/1.2730339 |
0.582 |
|
2007 |
Stone PR, Scarpulla MA, Farshchi R, Sharp ID, Beeman JW, Yu KM, Arenholz E, Denlinger J, Haller EE, Dubon OD. Mn L3,2 X-ray absorption spectroscopy and magnetic circular dichroism in ferromagnetic Ga1-xMnxP Aip Conference Proceedings. 893: 1177-1178. DOI: 10.1063/1.2730317 |
0.804 |
|
2007 |
Yu KM, Scarpulla MA, Farshchi R, Dubon OD, Walukiewicz W. Synthesis of highly mismatched alloys using ion implantation and pulsed laser melting Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 261: 1150-1154. DOI: 10.1016/J.Nimb.2007.03.033 |
0.788 |
|
2007 |
Acbas G, Sinova J, Scarpulla MA, Dubon OD, Cukr M, Novak V, Cerne J. Comparison of the mid-Infrared magneto-optical response of Ga 1-x Mn x As films grown by molecular beam epitaxy and ion implantation and pulsed laser melting Journal of Superconductivity and Novel Magnetism. 20: 457-460. DOI: 10.1007/S10948-007-0246-3 |
0.66 |
|
2006 |
Stone PR, Scarpulla MA, Farshchi R, Sharp ID, Haller EE, Dubon OD, Yu KM, Beeman JW, Arenholz E, Denlinger JD, Ohldag H. Mn L 3,2 x-ray absorption and magnetic circular dichroism in ferromagnetic Ga 1-xMn xP Applied Physics Letters. 89. DOI: 10.1063/1.2219713 |
0.802 |
|
2006 |
Farshchi R, Scarpulla MA, Stone PR, Yu KM, Sharp ID, Beeman JW, Silvestri HH, Reichertz LA, Haller EE, Dubon OD. Compositional tuning of ferromagnetism in Ga1-xMnxP Solid State Communications. 140: 443-446. DOI: 10.1016/J.Ssc.2006.09.010 |
0.807 |
|
2006 |
Dubon OD, Scarpulla MA, Farshchi R, Yu KM. Doping and defect control of ferromagnetic semiconductors formed by ion implantation and pulsed-laser melting Physica B: Condensed Matter. 376: 630-634. DOI: 10.1016/J.Physb.2005.12.159 |
0.817 |
|
2005 |
Scarpulla MA, Cardozo BL, Farshchi R, Oo WM, McCluskey MD, Yu KM, Dubon OD. Ferromagnetism in Ga(1-x)Mn(x)P: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band. Physical Review Letters. 95: 207204. PMID 16384094 DOI: 10.1103/Physrevlett.95.207204 |
0.804 |
|
2005 |
Scarpulla MA, Yu KM, Walukiewicz W, Dubon OD. Carrier concentration dependencies of magnetization & transport in Ga 1-xMn xAs 1-yTe y Aip Conference Proceedings. 772: 1367-1368. DOI: 10.1063/1.1994621 |
0.59 |
|
2005 |
Alberi K, Minor A, Scarpulla MA, Chung SJ, Mars DE, Yu KM, Walukiewicz W, Dubon OD. Fabrication of GaN xAs 1-x quantum structures by focused ion beam patterning Aip Conference Proceedings. 772: 223-224. DOI: 10.1063/1.1994074 |
0.577 |
|
2005 |
Yu KM, Walukiewicz W, Wojtowicz T, Denlinger J, Scarpulla MA, Liu X, Furdyna JK. Effect of film thickness on the incorporation of Mn interstitiels in Ga 1-xMn xas Applied Physics Letters. 86. DOI: 10.1063/1.1855430 |
0.417 |
|
2005 |
Dubon OD, Scarpulla MA, Yu KM, Walukiewicz W. Diluted semiconductors formed from energetic beams Institute of Physics Conference Series. 184: 399-404. |
0.623 |
|
2005 |
Yu KM, Walukiewicz W, Wu J, Mars DE, Scarpulla MA, Dubon OD, Ridgway MC, Geisz JF. Mutual passivation in dilute GaN xAs 1-x alloys Materials Research Society Symposium Proceedings. 864: 413-424. |
0.58 |
|
2004 |
Yu KM, Walukiewicz W, Shan W, Wu J, Beeman JW, Scarpulla MA, Dubon OD, Becla P. Synthesis and optical properties of II-O-VI highly mismatched alloys Journal of Applied Physics. 95: 6232-6238. DOI: 10.1063/1.1713021 |
0.593 |
|
2004 |
Shan W, Yu KM, Walukiewicz W, Beeman JW, Wu J, Ager JW, Scarpulla MA, Dubon OD, Haller EE. Effects of pressure on the band structure of highly mismatched Zn1-yMnyOxTe1-x alloys Applied Physics Letters. 84: 924-926. DOI: 10.1063/1.1646457 |
0.646 |
|
2004 |
Yu KM, Walukiewicz W, Scarpulla MA, Dubon OD, Shan W, Wu J, Beeman JW, Becla P. Synthesis and properties of highly mismatched II-O-VI alloys Iee Proceedings: Optoelectronics. 151: 452-459. DOI: 10.1049/ip-opt:20040932 |
0.603 |
|
2004 |
Yu KM, Walukiewicz W, Wu J, Shan W, Scarpulla MA, Dubon OD, Beeman JW, Becla P. Diluted ZnMnTe oxide: A multi-band semiconductor for high efficiency solar cells Physica Status Solidi (B) Basic Research. 241: 660-663. DOI: 10.1002/Pssb.200304167 |
0.629 |
|
2003 |
Yu KM, Walukiewicz W, Wu J, Shan W, Beeman JW, Scarpulla MA, Dubon OD, Becla P. Diluted II-VI oxide semiconductors with multiple band gaps. Physical Review Letters. 91: 246403. PMID 14683137 DOI: 10.1103/Physrevlett.91.246403 |
0.615 |
|
2003 |
Yu KM, Walukiewicz W, Wu J, Shan W, Beeman JW, Scarpulla MA, Dubon OD, Ridgway MC, Mars DE, Chamberlin DR. Mutual passivation of group IV donors and nitrogen in diluted GaN xAs1-x alloys Applied Physics Letters. 83: 2844-2846. DOI: 10.1063/1.1616980 |
0.599 |
|
2003 |
Yu KM, Walukiewicz W, Scarpulla MA, Dubon OD, Wu J, Jasinski J, Liliental-Weber Z, Beeman JW, Pillai MR, Aziz MJ. Synthesis of GaNxAs1-x thin films by pulsed laser melting and rapid thermal annealing of N+-implanted GaAs Journal of Applied Physics. 94: 1043-1049. DOI: 10.1063/1.1582393 |
0.628 |
|
2003 |
Scarpulla MA, Dubon OD, Yu KM, Monteiro O, Pillai MR, Aziz MJ, Ridgway MC. Ferromagnetic Ga1-xMnxAs produced by ion implantation and pulsed-laser melting Applied Physics Letters. 82: 1251-1253. DOI: 10.1063/1.1555260 |
0.566 |
|
2003 |
Scarpulla MA, Daud U, Yu KM, Monteiro O, Liliental-Weber Z, Zakharov D, Walukiewicz W, Dubon OD. Diluted magnetic semiconductors formed by ion implantation and pulsed-laser melting Physica B: Condensed Matter. 340: 908-912. DOI: 10.1016/J.Physb.2003.09.113 |
0.672 |
|
2003 |
Yu KM, Wu J, Walukiewicz W, Shan W, Beeman JW, Mars DE, Chamberlin DR, Scarpulla MA, Dubon OD, Ridgway MC, Geisz JF. Mutual passivation of group IV donors and isovalent nitrogen in diluted GaNxAs1-x alloys Physica B: Condensed Matter. 340: 389-393. DOI: 10.1016/J.Physb.2003.09.060 |
0.628 |
|
2002 |
Yu KM, Walukiewicz W, Wu J, Mars DE, Chamberlin DR, Scarpulla MA, Dubon OD, Geisz JF. Mutual passivation of electrically active and isovalent impurities. Nature Materials. 1: 185-9. PMID 12618808 DOI: 10.1038/Nmat754 |
0.625 |
|
2002 |
Yu KM, Walukiewicz W, Beeman JW, Scarpulla MA, Dubon OD, Pillai MR, Aziz MJ. Enhanced nitrogen incorporation by pulsed laser annealing of GaN xAs1-x formed by N ion implantation Applied Physics Letters. 80: 3958-3960. DOI: 10.1063/1.1481196 |
0.633 |
|
2001 |
Karis TE, Marchon B, Flores V, Scarpulla M. Lubricant spin-off from magnetic recording disks Tribology Letters. 11: 151-159. DOI: 10.1023/A:1012553415639 |
0.307 |
|
2000 |
Mathew Mate C, Yen BK, Miller DC, Toney MF, Scarpulla M, Frommer JE. New methodologies for measuring film thickness, coverage, and topography Ieee Transactions On Magnetics. 36: 110-114. DOI: 10.1109/20.824434 |
0.519 |
|
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