Year |
Citation |
Score |
2012 |
Lu H, Liu X, Burton JD, Bark CW, Wang Y, Zhang Y, Kim DJ, Stamm A, Lukashev P, Felker DA, Folkman CM, Gao P, Rzchowski MS, Pan XQ, Eom CB, et al. Enhancement of ferroelectric polarization stability by interface engineering. Advanced Materials (Deerfield Beach, Fla.). 24: 1209-16. PMID 22278910 DOI: 10.1002/Adma.201104398 |
0.543 |
|
2012 |
Hernandez T, Bark CW, Felker DA, Eom CB, Rzchowski MS. Localization of two-dimensional electron gas in LaAlO 3/ SrTiO 3 heterostructures Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.161407 |
0.564 |
|
2011 |
Baek SH, Park J, Kim DM, Aksyuk VA, Das RR, Bu SD, Felker DA, Lettieri J, Vaithyanathan V, Bharadwaja SS, Bassiri-Gharb N, Chen YB, Sun HP, Folkman CM, Jang HW, et al. Giant piezoelectricity on Si for hyperactive MEMS. Science (New York, N.Y.). 334: 958-61. PMID 22096193 DOI: 10.1126/Science.1207186 |
0.534 |
|
2011 |
Jang HW, Felker DA, Bark CW, Wang Y, Niranjan MK, Nelson CT, Zhang Y, Su D, Folkman CM, Baek SH, Lee S, Janicka K, Zhu Y, Pan XQ, Fong DD, et al. Metallic and insulating oxide interfaces controlled by electronic correlations. Science (New York, N.Y.). 331: 886-9. PMID 21330538 DOI: 10.1126/Science.1198781 |
0.573 |
|
2011 |
Bark CW, Felker DA, Wang Y, Zhangd Y, Jang HW, Folkman CM, Park JW, Baek SH, Zhou H, Fong DD, Pan XQ, Tsymbal EY, Rzchowski MS, Eom CB. Tailoring a two-dimensional electron gas at the LaAlO3/ SrTiO3 (001) interface by epitaxial strain Proceedings of the National Academy of Sciences of the United States of America. 108: 4720-4724. DOI: 10.1073/Pnas.1014849108 |
0.611 |
|
2010 |
Park JW, Bogorin DF, Cen C, Felker DA, Zhang Y, Nelson CT, Bark CW, Folkman CM, Pan XQ, Rzchowski MS, Levy J, Eom CB. Creation of a two-dimensional electron gas at an oxide interface on silicon. Nature Communications. 1: 94. PMID 20981022 DOI: 10.1038/Ncomms1096 |
0.565 |
|
2009 |
Gruverman A, Wu D, Lu H, Wang Y, Jang HW, Folkman CM, Zhuravlev MY, Felker D, Rzchowski M, Eom CB, Tsymbal EY. Tunneling electroresistance effect in ferroelectric tunnel junctions at the nanoscale. Nano Letters. 9: 3539-43. PMID 19697939 DOI: 10.1021/Nl901754T |
0.58 |
|
2008 |
Jang HW, Baek SH, Ortiz D, Folkman CM, Das RR, Chu YH, Shafer P, Zhang JX, Choudhury S, Vaithyanathan V, Chen YB, Felker DA, Biegalski MD, Rzchowski MS, Pan XQ, et al. Strain-induced polarization rotation in epitaxial (001) BiFeO3 thin films. Physical Review Letters. 101: 107602. PMID 18851256 DOI: 10.1103/Physrevlett.101.107602 |
0.562 |
|
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