Joseph A. Bradley, Ph.D. - Publications

Affiliations: 
2010 University of Washington, Seattle, Seattle, WA 
Area:
Condensed Matter Physics, Physical Chemistry

35 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Su J, Batista ER, Boland KS, Bone SE, Bradley JA, Cary SK, Clark DL, Conradson SD, Ditter AS, Kaltsoyannis N, Keith JM, Kerridge A, Kozimor SA, Löble MW, Martin RL, et al. Energy-Degeneracy-Driven Covalency in Actinide Bonding. Journal of the American Chemical Society. PMID 30540455 DOI: 10.1021/jacs.8b09436  0.64
2013 Mortensen DR, Seidler GT, Bradley JA, Lipp MJ, Evans WJ, Chow P, Xiao YM, Boman G, Bowden ME. A versatile medium-resolution x-ray emission spectrometer for diamond anvil cell applications. The Review of Scientific Instruments. 84: 083908. PMID 24007080 DOI: 10.1063/1.4819257  0.64
2013 Minasian SG, Keith JM, Batista ER, Boland KS, Bradley JA, Daly SR, Kozimor SA, Lukens WW, Martin RL, Nordlund D, Seidler GT, Shuh DK, Sokaras D, Tyliszczak T, Wagner GL, et al. Covalency in metal-oxygen multiple bonds evaluated using oxygen K-edge spectroscopy and electronic structure theory. Journal of the American Chemical Society. 135: 1864-71. PMID 23351138 DOI: 10.1021/ja310223b  0.64
2012 Pacold JI, Bradley JA, Mattern BA, Lipp MJ, Seidler GT, Chow P, Xiao Y, Rod E, Rusthoven B, Quintana J. A miniature X-ray emission spectrometer (miniXES) for high-pressure studies in a diamond anvil cell. Journal of Synchrotron Radiation. 19: 245-51. PMID 22338686 DOI: 10.1107/S0909049511056081  0.64
2011 Tillack AF, Noone KM, Macleod BA, Nordlund D, Nagle KP, Bradley JA, Hau SK, Yip HL, Jen AK, Seidler GT, Ginger DS. Surface characterization of polythiophene:fullerene blends on different electrodes using near edge X-ray absorption fine structure. Acs Applied Materials & Interfaces. 3: 726-32. PMID 21366246 DOI: 10.1021/am101055r  0.64
2011 Bradley JA, Moore KT, Van Der Laan G, Bradley JP, Gordon RA. Core and shallow-core d- to f-shell excitations in rare-earth metals Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/PhysRevB.84.205105  0.44
2011 Söderlind P, Moore KT, Landa A, Sadigh B, Bradley JA. Pressure-induced changes in the electronic structure of americium metal Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/PhysRevB.84.075138  0.64
2010 Bradley JA, Seidler GT, Cooper G, Vos M, Hitchcock AP, Sorini AP, Schlimmer C, Nagle KP. Comparative study of the valence electronic excitations of N2 by inelastic x-ray and electron scattering. Physical Review Letters. 105: 053202. PMID 20867914 DOI: 10.1103/PhysRevLett.105.053202  0.64
2010 Bradley JA, Yang P, Batista ER, Boland KS, Burns CJ, Clark DL, Conradson SD, Kozimor SA, Martin RL, Seidler GT, Scott BL, Shuh DK, Tyliszczak T, Wilkerson MP, Wolfsberg LE. Experimental and theoretical comparison of the O K-edge nonresonant inelastic X-ray scattering and X-ray absorption spectra of NaReO4. Journal of the American Chemical Society. 132: 13914-21. PMID 20839792 DOI: 10.1021/ja1040978  0.64
2010 Bradley JA, Kozimor SA, Seidler GT. Measuring O K-edge X-ray absorption spectra reliably enough for quantitative analysis of light atom bond covalency Plutonium Futures - the Science 2010. 375-376.  0.64
2008 Dickinson B, Seidler GT, Webb ZW, Bradley JA, Nagle KP, Heald SM, Gordon RA, Chou IM. A short working distance multiple crystal x-ray spectrometer. The Review of Scientific Instruments. 79: 123112. PMID 19123550 DOI: 10.1063/1.3048544  0.64
2008 Minzer M, Bradley JA, Musgrave R, Seidler GT, Skilton A. A pressure cell for nonresonant inelastic x-ray scattering studies of gas phases. The Review of Scientific Instruments. 79: 086101. PMID 19044382 DOI: 10.1063/1.2964106  0.64
1994 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Luminescence kinetics of intrinsic excitonic states quantum-mechanically bound near high-quality (n - Type GaAs)/(p-type AlxGa1-xAs) heterointerfaces Physical Review B. 49: 8113-8125. DOI: 10.1103/PhysRevB.49.8113  0.64
1994 Hjalmarson HP, Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Temperature-dependent radiative recombination of free excitons in high-quality GaAs heterostructures Journal of Luminescence. 60: 827-829. DOI: 10.1016/0022-2313(94)90289-5  0.64
1993 Gilliland GD, Antonelli A, Wolford DJ, Bajaj KK, Klem J, Bradley JA. Direct measurement of heavy-hole exciton transport in type-II GaAs/AlAs superlattices Physical Review Letters. 71: 3717-3720. DOI: 10.1103/PhysRevLett.71.3717  0.64
1993 Wolford DJ, Gilliland GD, Kuech TF, Bradley JA, Hjalmarson HP. Optically determined minority-carrier transport in GaAs/AlxGa1-xAs heterostructures Physical Review B. 47: 15601-15608. DOI: 10.1103/PhysRevB.47.15601  0.64
1993 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA, Hjalmarson HP. Minority-carrier recombination kinetics and transport in]] surface-free" GaAs/AlxGa1-xAs double heterostructures Journal of Applied Physics. 73: 8386-8396. DOI: 10.1063/1.353407  0.64
1992 Northrop GA, Morar JF, Wolford DJ, Bradley JA. Photoluminescence from pseudomorphic Si1-xGex quantum wells grown by molecular beam epitaxy. Variation of the band gap with high pressure Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 10: 2018-2021. DOI: 10.1116/1.586178  0.64
1992 Northrop GA, Morar JF, Wolford DJ, Bradley JA. Observation of strong Si/Si1-xGex narrow quantum-well near-edge luminescence under applied hydrostatic pressure Applied Physics Letters. 61: 192-194. DOI: 10.1063/1.108215  0.64
1991 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Intrinsic, heterointerface excitonic states in GaAs(n)/Al<inf>0.3</inf>Ga<inf>0.7</inf>As(p) double heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2377-2383. DOI: 10.1116/1.585706  0.64
1991 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Quantum-confined excitonic states at high-quality interfaces in GaAs(n type)/AlxGa1-xAs(p type) double heterostructures Physical Review B. 43: 14251-14254. DOI: 10.1103/PhysRevB.43.14251  0.64
1991 Gilliland GD, Wolford DJ, Kuech TF, Bradley JA. Long-range, minority-carrier transport in high quality "surface- free" GaAs/AlGaAs double heterostructures Applied Physics Letters. 59: 216-218. DOI: 10.1063/1.105970  0.64
1991 Gilliland GD, Wolford DJ, Northrop GA, Kuech TF, Bradley JA. Dynamics and transport of excitons confined at high-quality GaAs/AlxGa1-xAs interfaces Institute of Physics Conference Series. 120: 413-418.  0.64
1991 Wolford DJ, Gilliland GD, Kuech TF, Bradley JA, Hjalmarson HP. Optically determined low-temperature, high-mobility transport in 'interface-free' GaAs heterostructures Institute of Physics Conference Series. 120: 271-274.  0.64
1987 Gell MA, Ninno D, Jaros M, Wolford DJ, Keuch TF, Bradley JA. Effects of alloying and hydrostatic pressure on electronic and optical properties of GaAs-AlxGa1-xAs superlattices and multiple-quantum-well structures Physical Review B. 35: 1196-1222. DOI: 10.1103/PhysRevB.35.1196  0.64
1986 Mariette H, Wolford DJ, Bradley JA. Time decays of donor-bound excitons in GaAs under pressure-induced-X crossover Physical Review B. 33: 8373-8378. DOI: 10.1103/PhysRevB.33.8373  0.64
1985 Wolford DJ, Bradley JA. Pressure dependence of shallow bound states in gallium arsenide Solid State Communications. 53: 1069-1076. DOI: 10.1016/0038-1098(85)90882-8  0.64
1985 Wolford DJ, Mariette H, Bradley JA. PRESSURE DEPENDENCE OF NEAR-EDGE (5 K) RECOMBINATION IN HIGH-PURITY III-V MATERIALS Institute of Physics Conference Series. 275-280.  0.64
1985 Wolford DJ, Bradley JA, Fry K, Thompson J. NITROGEN ISOELECTRONIC TRAP IN GaAs . 627-630.  0.64
1985 Wolford DJ, Bradley JA, Fry K, Thompson J. NITROGEN ISOELECTRONIC TRAP IN GaAs . 627-630.  0.64
1985 Kuech TF, Veuhoff E, Wolford DJ, Bradley JA. LOW TEMPERATURE GROWTH OF Al//xGa//1// minus //xAs BY MOCVD Institute of Physics Conference Series. 181-186.  0.64
1983 Wolford DJ, Scott BA, Reimer JA, Bradley JA. Efficient visible luminescence from hydrogenated amorphous silicon Physica B+C. 117: 920-922. DOI: 10.1016/0378-4363(83)90694-0  0.64
1983 Wolford DJ, Bradley JA, Fry K, Thompson J, King HE. N ISOELECTRONIC TRAPS IN GaAs AND GaAs//1// minus //xP//x (x less than 0. 20) Institute of Physics Conference Series. 477-484.  0.64
1979 Tsang JC, Kirtley JR, Bradley JA. Surface-enhanced Raman spectroscopy and surface plasmons Physical Review Letters. 43: 772-775. DOI: 10.1103/PhysRevLett.43.772  0.64
1979 Pinczuk A, Louie SG, Welber B, Tsang JC, Bradley JA. CONDUCTION BAND PARAMETERS OF GaAs AT THE DELTA //1//C MINIMA Inst Phys Conf Ser. 1191-1194.  0.64
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