| Year |
Citation |
Score |
| 2024 |
Ushanov VI, Eremeev SV, Silkin VM, Chaldyshev VV. Unveiling Influence of Dielectric Losses on the Localized Surface Plasmon Resonance in (Al,Ga)As:Sb Metamaterials. Nanomaterials (Basel, Switzerland). 14. PMID 38251132 DOI: 10.3390/nano14020167 |
0.375 |
|
| 2024 |
Ushanov VI, Eremeev SV, Silkin VM, Chaldyshev VV. Plasmon Resonance in a System of Bi Nanoparticles Embedded into (Al,Ga)As Matrix. Nanomaterials (Basel, Switzerland). 14. PMID 38202564 DOI: 10.3390/nano14010109 |
0.348 |
|
| 2022 |
Bert N, Ushanov V, Snigirev L, Kirilenko D, Ulin V, Yagovkina M, Preobrazhenskii V, Putyato M, Semyagin B, Kasatkin I, Chaldyshev V. Metal-Semiconductor AsSb-AlGaAsSb Metamaterial. Materials (Basel, Switzerland). 15. PMID 36363189 DOI: 10.3390/ma15217597 |
0.313 |
|
| 2022 |
Kosarev AN, Chaldyshev VV, Cherkashin N. Experimentally-Verified Modeling of InGaAs Quantum Dots. Nanomaterials (Basel, Switzerland). 12. PMID 35745307 DOI: 10.3390/nano12121967 |
0.513 |
|
| 2020 |
Ivanov AA, Chaldyshev VV, Zavarin EE, Sakharov AV, Lundin WV, Tsatsulnikov AF. Optical reflection spectra of resonant photonic structures based on a system of 100 InGaN quantum wells Journal of Physics: Conference Series. 1697: 012153. DOI: 10.1088/1742-6596/1697/1/012153 |
0.657 |
|
| 2020 |
Kosarev A, Chaldyshev VV. Carrier localization in self-organized quantum dots: An interplay between quantum and solid mechanics Applied Physics Letters. 117: 202103. DOI: 10.1063/5.0032110 |
0.525 |
|
| 2019 |
Maharjan N, Chaldyshev V, Nakarmi ML. Resonant optical studies of GaAs/AlGaAs Multiple Quantum Well based Bragg Structures at excited states Mrs Advances. 4: 651-659. DOI: 10.1557/Adv.2019.21 |
0.651 |
|
| 2019 |
Kosarev AN, Chaldyshev VV, Kondikov AA, Vartanyan TA, Toropov NA, Gladskikh IA, Gladskikh PV, Akimov I, Bayer M, Preobrazhenskii VV, Putyato MA, Semyagin BR. Epitaxial InGaAs Quantum Dots in Al0.29Ga0.71As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles Optics and Spectroscopy. 126: 492-496. DOI: 10.1134/S0030400X19050151 |
0.346 |
|
| 2019 |
Kosarev A, Bert N, Nevedomskii V, Chaldyshev V, Preobrazhenskii V, Putyato M, Semyagin B. Photoluminescence from InAs Quantum Dots Buried Under Low‐Temperature‐Grown GaAs Physica Status Solidi (B). 256: 1800479. DOI: 10.1002/PSSB.201800479 |
0.595 |
|
| 2018 |
Ushanov VI, Chaldyshev VV, Preobrazhenskii VV, Putyato MA, Semyagin BR. Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature Semiconductors. 52: 1704-1707. DOI: 10.1134/S1063782618130213 |
0.484 |
|
| 2018 |
Ushanov VI, Chaldyshev VV, Preobrazhenskiy VV, Putyato MA, Semyagin BR. Resonant Optical Reflection from AsSb–AlGaAs Metamaterials and Structures Semiconductors. 52: 468-472. DOI: 10.1134/S1063782618040292 |
0.41 |
|
| 2018 |
Chaldyshev VV, Kundelev EV, Poddubny AN, Vasil’ev AP, Yagovkina MA, Chend Y, Maharjan N, Liu Z, Nakarmi ML, Shakya NM. Optical Properties of AlGaAs/GaAs Resonant Bragg Structure at the Second Quantum State Semiconductors. 52: 447-451. DOI: 10.1134/S1063782618040097 |
0.72 |
|
| 2018 |
Poltavtsev SV, Solovev IA, Akimov IA, Chaldyshev VV, Lundin WV, Sakharov AV, Tsatsulnikov AF, Yakovlev DR, Bayer M. Long coherent dynamics of localized excitons in (In,Ga)N/GaN quantum wells Physical Review B. 98. DOI: 10.1103/PhysRevB.98.195315 |
0.424 |
|
| 2018 |
Arteev DS, Sakharov AV, Lundin WV, Zavarin EE, Usov SO, Chaldyshev VV, Bolshakov AS, Yagovkina MA, Tsatsulnikov AF. Resonant Bragg structures with GaN/AlGaN Quantum Wells Journal of Physics: Conference Series. 1038: 012119. DOI: 10.1088/1742-6596/1038/1/012119 |
0.639 |
|
| 2017 |
Toropov NA, Gladskikh IA, Gladskikh PV, Kosarev AN, Preobrazhenskiĭ VV, Putyato MA, Semyagin BR, Chaldyshev VV, Vartanyan TA. Absorption and photoluminescence of epitaxial quantum dots in the near field of silver nanostructures Journal of Optical Technology. 84: 459. DOI: 10.1364/JOT.84.000459 |
0.551 |
|
| 2017 |
Bolshakov AS, Chaldyshev VV, Zavarin EE, Sakharov AV, Lundin WV, Tsatsulnikov AF, Yagovkina MA. Room temperature exciton-polariton resonant reflection and suppressed absorption in periodic systems of InGaN quantum wells Journal of Applied Physics. 121: 133101. DOI: 10.1063/1.4979636 |
0.591 |
|
| 2017 |
Chen Y, Maharjan N, Liu Z, Nakarmi ML, Chaldyshev VV, Kundelev EV, Poddubny AN, Vasil'ev AP, Yagovkina MA, Shakya NM. Resonant optical properties of AlGaAs/GaAs multiple-quantum-well based Bragg structure at the second quantum state Journal of Applied Physics. 121: 103101. DOI: 10.1063/1.4978252 |
0.629 |
|
| 2016 |
Ushanov VI, Chaldyshev VV, Preobrazhenskii VV, Putyato MA, Semyagin BR. Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs Semiconductors. 50: 1595-1599. DOI: 10.1134/S1063782616120253 |
0.326 |
|
| 2016 |
Kosarev AN, Chaldyshev VV, Preobrazhenskii VV, Putyato MA, Semyagin BR. Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence Semiconductors. 50: 1499-1505. DOI: 10.1134/S1063782616110154 |
0.538 |
|
| 2016 |
Bolshakov AS, Chaldyshev VV, Zavarin EE, Sakharov AV, Lundin VV, Tsatsulnikov AF. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells Semiconductors. 50: 1431-1434. DOI: 10.1134/S1063782616110051 |
0.688 |
|
| 2016 |
Tonkaev P, Kondikov A, Chaldyshev VV. Research of resonant light reflection by a periodic system of GaAs/AlGaAs quantum wells. Journal of Physics: Conference Series. 738: 012060. DOI: 10.1088/1742-6596/738/1/012060 |
0.574 |
|
| 2015 |
Bolshakov AS, Chaldyshev VV, Lundin WV, Sakharov AV, Tsatsulnikov AF, Yagovkina MA, Zavarin EE. Resonant Bragg structures based on III-nitrides Journal of Materials Research. 30: 603-608. DOI: 10.1557/jmr.2014.397 |
0.504 |
|
| 2015 |
Ushanov VI, Chaldyshev VV, Bert NA, Nevedomsky VN, Il’inskaya ND, Lebedeva NM, Preobrazhenskii VV, Putyato MA, Semyagin BR. Plasmon resonance in new AsSb–AlGaAs metal–semiconductor metamaterials Semiconductors. 49: 1587-1591. DOI: 10.1134/S1063782615120234 |
0.328 |
|
| 2015 |
Nevedomskiy VN, Bert NA, Chaldyshev VV, Preobrazhernskiy VV, Putyato MA, Semyagin BR. Spatially correlated two-dimensional arrays of semiconductor and metal quantum dots in GaAs-based heterostructures Semiconductors. 49: 1661-1664. DOI: 10.1134/S106378261512012X |
0.54 |
|
| 2015 |
Bolshakov AS, Chaldyshev VV, Babichev AV, Kudryashov DA, Gudovskikh AS, Morozov IA, Sobolev MS, Nikitina EV. Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy Semiconductors. 49: 1400-1404. DOI: 10.1134/S1063782615110044 |
0.609 |
|
| 2015 |
Chaldyshev VV, Bolshakov AS, Zavarin EE, Sakharov AV, Lundin VV, Tsatsulnikov AF, Yagovkina MA. Optical lattices of excitons in InGaN/GaN quantum well systems Semiconductors. 49: 4-8. DOI: 10.1134/S1063782615010042 |
0.648 |
|
| 2014 |
Nevedomskiy VN, Bert NA, Chaldyshev VV, Preobrazhenskiy VV, Putyato MA, Semyagin BR. Effect of local structural defects on the precipitation of as in the vicinity of InAs quantum dots in a GaAs matrix Semiconductors. 48: 1539-1543. DOI: 10.1134/S1063782614110207 |
0.593 |
|
| 2013 |
Bol'shakov AS, Chaldyshev VV, Zavarin EE, Sakharov AV, Lundin VV, Tsatsul'nikov AF, Yagovkina MA. Resonance Bragg structure with double InGaN quantum wells Physics of the Solid State. 55: 1817-1820. DOI: 10.1134/S1063783413090059 |
0.67 |
|
| 2013 |
Nevedomskiy VN, Bert NA, Chaldyshev VV, Preobrazhenskiy VV, Putyato MA, Semyagin BR. Electron microscopy of GaAs-based structures with InAs and As quantum dots separated by an AlAs barrier Semiconductors. 47: 1185-1192. DOI: 10.1134/S1063782613090170 |
0.579 |
|
| 2013 |
Ushanov VI, Chaldyshev VV, Preobrazhenskii VV, Putyato MA, Semyagin BR. Optical reflection from the Bragg lattice of AsSb metal nanoinclusions in an AlGaAs matrix Semiconductors. 47: 1046-1050. DOI: 10.1134/S1063782613080198 |
0.31 |
|
| 2013 |
Cherkashin N, Reboh S, Htch MJ, Claverie A, Preobrazhenskii VV, Putyato MA, Semyagin BR, Chaldyshev VV. Determination of stress, strain, and elemental distribution within In(Ga)As quantum dots embedded in GaAs using advanced transmission electron microscopy Applied Physics Letters. 102. DOI: 10.1063/1.4804380 |
0.397 |
|
| 2012 |
Lukin PV, Chaldyshev VV, Preobrazhenskii VV, Putyato MA, Semyagin BR. Optical properties of GaAs structures containing a periodic system of layers of AsSb metal nanoinclusions Semiconductors. 46: 1291-1295. DOI: 10.1134/S1063782612100089 |
0.51 |
|
| 2012 |
Chaldyshev VV, Kundelev EV, Nikitina EV, Egorov AY, Gorbatsevich AA. Resonance reflection of light by a periodic system of excitons in GaAs/AlGaAs quantum wells Semiconductors. 46: 1016-1019. DOI: 10.1134/S1063782612080052 |
0.583 |
|
| 2012 |
Chaldyshev VV, Kundelev EV, Chen Y, Poddubny AN, Vasil'ev AP, Liu Z. Resonant optical reflection by periodic systems of the GaAs/AlGaAs quantum well excitons Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 1557-1559. DOI: 10.1002/Pssc.201100692 |
0.655 |
|
| 2011 |
Bert NA, Kolesnikova AL, Korolev IK, Romanov AE, Freidin AB, Chaldyshev VV, Aifantis EC. Elastic fields and physical properties of surface quantum dots Physics of the Solid State. 53: 2091-2102. DOI: 10.1134/S1063783411100052 |
0.549 |
|
| 2011 |
Nevedomskii VN, Bert NA, Chaldyshev VV, Preobrazhenskii VV, Putyato MA, Semyagin BR. Electron microscopy of GaAs Structures with InAs and as quantum dots Semiconductors. 45: 1580-1582. DOI: 10.1134/S1063782611120104 |
0.411 |
|
| 2011 |
Zaichenko AA, Semyagin BR, Preobrazhenskii VV, Putyato MA, Nevedomskii VN, Chaldyshev VV, Bert NA. Formation of complexes of quantum dots InAs and nanoclusters as in matrix GaAs by molecular beam epitaxy 12th International Conference and Seminar On Micro/Nanotechnologies and Electron Devices, Edm'2011 - Proceedings. 105-107. DOI: 10.1109/EDM.2011.6006906 |
0.579 |
|
| 2011 |
Chaldyshev VV, Bolshakov AS, Zavarin EE, Sakharov AV, Lundin WV, Tsatsulnikov AF, Yagovkina MA, Kim T, Park Y. Optical lattices of InGaN quantum well excitons Applied Physics Letters. 99. DOI: 10.1063/1.3670499 |
0.695 |
|
| 2011 |
Chaldyshev VV, Chen Y, Poddubny AN, Vasil'Ev AP, Liu Z. Resonant optical reflection by a periodic system of the quantum well excitons at the second quantum state Applied Physics Letters. 98. DOI: 10.1063/1.3554429 |
0.658 |
|
| 2010 |
Chaldyshev VV, Sholohov DE, Vasil'ev AP. An (AlGaAs/GaAs/AlGaAs)60 resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wells Semiconductors. 44: 1222-1226. DOI: 10.1134/S1063782610090204 |
0.669 |
|
| 2009 |
Nevedomskii VN, Bert NA, Chaldyshev VV, Preobrazhenskii VV, Putyato MA, Semyagin BR. GaAs structures with InAs and As quantum dots produced in a single molecular beam epitaxy process Semiconductors. 43: 1617-1621. DOI: 10.1134/S1063782609120082 |
0.584 |
|
| 2009 |
Bert NA, Kolesnikova AL, Nevedomsky VN, Preobrazhenskii VV, Putyato MA, Romanov AE, Seleznev VM, Semyagin BR, Chaldyshev VV. Formation of dislocation defects in the process of burying of InAs quantum dots into GaAs Semiconductors. 43: 1387-1393. DOI: 10.1134/S1063782609100236 |
0.557 |
|
| 2009 |
Chaldyshev VV, Yagovkina MA, Baidakova MV, Preobrazhenskii VV, Putyato MA, Semyagin BR. High-resolution X-ray diffraction studies of the GaAs structures grown at a low temperature and periodically δ-doped with antimony and phosphorus Semiconductors. 43: 1078-1085. DOI: 10.1134/S1063782609080211 |
0.457 |
|
| 2009 |
Chaldyshev VV, Bert NA, Kolesnikova AL, Romanov AE. Stress relaxation scenario for buried quantum dots Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/PhysRevB.79.233304 |
0.448 |
|
| 2009 |
Chaldyshev VV, Bert NA, Nevedomsky VN, Preobrazhenskii VV, Putyato MA, Semyagin BR. Self-organization of InAs and As quantum dots in GaAs by a combined molecular beam epitaxy process Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 2698-2700. DOI: 10.1002/pssc.200982573 |
0.462 |
|
| 2008 |
Chaldyshev VV, Shkolnik AS, Evtikhiev VP, Holden T. Optical spectroscopy of a semi-insulating GaAs/AlGaAs multiple quantum well system near double exciton-polariton and Bragg resonance Journal of Materials Science: Materials in Electronics. 19: 699-703. DOI: 10.1007/s10854-007-9382-6 |
0.646 |
|
| 2007 |
Chaldyshev VV, Shkol'nik AS, Evtikhiev VP, Holden T. Modulation optical spectroscopy of excitons in structures with GaAs multiple quantum wells separated by tunneling-nontransparent barriers Semiconductors. 41: 1434-1438. DOI: 10.1134/S106378260712010X |
0.536 |
|
| 2007 |
Chaldyshev VV, Kolesnikova AL, Romanov AE. Elastic energy relaxation in buried quantum dots Materials Research Society Symposium Proceedings. 959: 124-129. |
0.411 |
|
| 2006 |
Voronov MM, Ivchenko EL, Poddubnyǐ AN, Chaldyshev VV. Special frequencies in the optical reflectance spectra of resonant Bragg structures Physics of the Solid State. 48: 1814-1819. DOI: 10.1134/S1063783406090332 |
0.534 |
|
| 2006 |
Chaldyshev VV, Shkol'nik AS, Evtikhiev VP, Holden T. Optical reflection and contactless electroreflection from GaAlAs layers with periodically arranged GaAs quantum wells Semiconductors. 40: 1432-1435. DOI: 10.1134/S1063782606120116 |
0.582 |
|
| 2006 |
Chaldyshev VV, Musikhin YG, Bert NA, Nielsen B, Mendez EE, Ma Z, Holden T. Epitaxial c-GaAs/h-GaN heterostructures Materials Research Society Symposium Proceedings. 892: 711-716. |
0.316 |
|
| 1984 |
Biryulin YF, Ichkitidze RR, Chaldyshev VV, Shmartsev YV. COMPOSITION AND TEMPERATURE DEPENDENCES OF THE QUANTUM EFFICIENCY OF THE PHOTOLUMINESCENCE EMITTED BY GaAs//1// minus //xSb//x SOLIDS SOLUTIONS Soviet Physics. Semiconductors. 18: 780-783. |
0.371 |
|
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