Theodosia Gougousi - Publications

Affiliations: 
Physics, Applied University of Maryland, Baltimore County 
Area:
Atomic Physics, Nanoscience, Materials Science Engineering

49 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Strobbia P, Henegar AJ, Gougousi T, Cullum BM. Layered Gold and Titanium Dioxide Substrates for Improved Surface Enhanced Raman Spectroscopic Sensing. Applied Spectroscopy. PMID 27329834 DOI: 10.1177/0003702816647964  1
2016 Henegar AJ, Cook AJ, Dang P, Gougousi T. Native Oxide Transport and Removal During Atomic Layer Deposition of TiO2 Films on GaAs(100) Surfaces. Acs Applied Materials & Interfaces. 8: 1667-75. PMID 26741279 DOI: 10.1021/acsami.5b08998  1
2016 Henegar AJ, Gougousi T. Native oxide transport and removal during the atomic layer deposition of Ta2O5 on InAs(100) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4945115  1
2016 Ye L, Gougousi T. Diffusion and interface evolution during the atomic layer deposition of TiO2 on GaAs(100) and InAs(100) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4931568  1
2015 Henegar AJ, Gougousi T. Stability and surface reactivity of anatase TiO<inf>2</inf> films Ecs Journal of Solid State Science and Technology. 4: P298-P304. DOI: 10.1149/2.0041508jss  1
2015 Strobbia P, Henegar A, Gougousi T, Cullum BM. Characterization of the role of oxide spacers in multilayer-enhanced SERS probes Proceedings of Spie - the International Society For Optical Engineering. 9487. DOI: 10.1117/12.2177467  1
2014 Ye L, Gougousi T. In situ infrared spectroscopy study of the interface self-cleaning during the atomic layer deposition of HfO2on GaAs(100) surfaces Applied Physics Letters. 105. DOI: 10.1063/1.4896501  1
2014 Deen DA, Storm DF, Meyer DJ, Bass R, Binari SC, Gougousi T, Evans KR. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates Applied Physics Letters. 105. DOI: 10.1063/1.4895105  1
2013 Ye L, Gougousi T. Indium diffusion and native oxide removal during the atomic layer deposition (ALD) of TiO2 films on InAs(100) surfaces. Acs Applied Materials & Interfaces. 5: 8081-7. PMID 23895423 DOI: 10.1021/am402161f  1
2013 Meyer DJ, Deen DA, Storm DF, Ancona MG, Scott Katzer D, Bass R, Roussos JA, Downey BP, Binari SC, Gougousi T, Paskova T, Preble EA, Evans KR. High electron velocity submicrometer AlN/GaN MOS-hemts on freestanding GaN substrates Ieee Electron Device Letters. 34: 199-201. DOI: 10.1109/LED.2012.2228463  1
2013 Yim JH, Rodriguez-Santiago V, Williams AA, Gougousi T, Pappas DD, Hirvonen JK. Atmospheric pressure plasma enhanced chemical vapor deposition of hydrophobic coatings using fluorine-based liquid precursors Surface and Coatings Technology. 234: 21-32. DOI: 10.1016/j.surfcoat.2013.03.028  1
2013 Storm DF, Deen DA, Katzer DS, Meyer DJ, Binari SC, Gougousi T, Paskova T, Preble EA, Evans KR, Smith DJ. Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates Journal of Crystal Growth. 380: 14-17. DOI: 10.1016/j.jcrysgro.2013.05.029  1
2012 Gougousi T, Ye L. Interface between atomic layer deposition Ta 2O 5 films and GaAs(100) surfaces Journal of Physical Chemistry C. 116: 8924-8931. DOI: 10.1021/jp2101336  1
2011 Deen DA, Storm DF, Bass R, Meyer DJ, Katzer DS, Binari SC, Lacis JW, Gougousi T. Atomic layer deposited Ta2O5 gate insulation for enhancing breakdown voltage of AlN/GaN high electron mobility transistors Applied Physics Letters. 98. DOI: 10.1063/1.3531551  1
2011 Deen D, Storm D, Meyer D, Katzer DS, Bass R, Binari S, Gougousi T. AlN/GaN HEMTs with high-κ ALD HfO2 or Ta2O5 gate insulation Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2420-2423. DOI: 10.1002/pssc.201001071  1
2011 Meyer DJ, Katzer DS, Deen DA, Storm DF, Binari SC, Gougousi T. HfO 2-insulated gate N-polar GaN HEMTs with high breakdown voltage Physica Status Solidi (a) Applications and Materials Science. 208: 1630-1633. DOI: 10.1002/pssa.201001080  1
2010 Gougousi T, Hackley JC, Demaree JD, Lacis JW. Growth and interface evolution of HfO2 films on GaAs(100) surfaces Journal of the Electrochemical Society. 157. DOI: 10.1149/1.3353166  1
2010 Gougousi T, Lacis JW. Native oxide consumption during the atomic layer deposition of TiO2 films on GaAs (100) surfaces Thin Solid Films. 518: 2006-2009. DOI: 10.1016/j.tsf.2009.08.028  1
2009 Deen DA, Binari SC, Storm DF, Katzer DS, Roussos JA, Hackley JC, Gougousi T. AlN/GaN insulated gate HEMTs with HfO2 gate dielectric Electronics Letters. 45: 423-424. DOI: 10.1049/el.2009.3688  1
2009 Hackley JC, Gougousi T. Properties of atomic layer deposited HfO2 thin films Thin Solid Films. 517: 6576-6583. DOI: 10.1016/j.tsf.2009.04.033  1
2009 Gougousi T, Lacis JW, Hackley JC, Demaree JD. Atomic layer deposition of metal oxide films on GaAs (100) surfaces Materials Research Society Symposium Proceedings. 1155: 119-124.  1
2008 Hackley JC, Demaree JD, Gougousi T. Growth and interface of HfO2 films on H-terminated Si from a TDMAH and H2O atomic layer deposition process Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 1235-1240. DOI: 10.1116/1.2965813  1
2008 Hackley JC, Demaree JD, Gougousi T. Interface of atomic layer deposited Hf O2 films on GaAs (100) surfaces Applied Physics Letters. 92. DOI: 10.1063/1.2908223  1
2008 Gougousi T, Chen Z. Deposition of yttrium oxide thin films in supercritical carbon dioxide Thin Solid Films. 516: 6197-6204. DOI: 10.1016/j.tsf.2007.11.104  1
2008 Gougousi T, Chen Z. Low temperature deposition of metal oxide thin films in supercritical carbon dioxide using metal-organic precursors Materials Research Society Symposium Proceedings. 1007: 307-312.  1
2008 Hackley JC, Demaree JD, Gougousi T. Atomic layer deposition of HfO2 thin films on Si and GaAs substrates Materials Research Society Symposium Proceedings. 1073: 13-18.  1
2007 Hackley JC, Gougousi T, Demaree JD. Nucleation of HfO2 atomic layer deposition films on chemical oxide and H-terminated Si Journal of Applied Physics. 102. DOI: 10.1063/1.2764223  1
2007 Hackley JC, Demaree JD, Gougousi T. Nucleation studies of HfO2 thin films produced by atomic layer deposition Materials Research Society Symposium Proceedings. 996: 70-75.  1
2006 Barua D, Gougousi T, Young ED, Parsons GN. Supercritical-carbon dioxide-assisted cyclic deposition of metal oxide and metal thin films Applied Physics Letters. 88. DOI: 10.1063/1.2181651  1
2006 Gougousi T, Terry DB, Parsons GN. Charge generation during oxidation of thin Hf metal films on silicon Thin Solid Films. 513: 201-205. DOI: 10.1016/j.tsf.2006.02.004  1
2005 Park KJ, Doub JM, Gougousi T, Parsons GN. Microcontact patterning of ruthenium gate electrodes by selective area atomic layer deposition Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1852079  1
2005 Gougousi T, Barua D, Young ED, Parsons GN. Metal oxide thin films deposited from metal organic precursors in supercritical CO 2 solutions Chemistry of Materials. 17: 5093-5100. DOI: 10.1021/cm0510965  1
2004 Gougousi T, Parsons GN. Postdeposition reactivity of sputter-deposited high-dielectric-constant films with ambient H2O and carbon-containing species Journal of Applied Physics. 95: 1391-1396. DOI: 10.1063/1.1636513  1
2003 Gougousi T, Niu D, Ashcraft RW, Parsons GN. Carbonate formation during post-deposition ambient exposure of high-k dielectrics Applied Physics Letters. 83: 3543-3545. DOI: 10.1063/1.1623316  1
2003 Gougousi T, Jason Kelly M, Terry DB, Parsons GN. Properties of La-silicate high-K dielectric films formed by oxidation of La on silicon Journal of Applied Physics. 93: 1691-1696. DOI: 10.1063/1.1531818  1
2003 Gougousi T, Kelly MJ, Parsons GN. Kinetics of charge generation during formation of Hf and Zr silicate dielectrics Materials Research Society Symposium - Proceedings. 765: 79-84.  1
2002 Xu Y, Gougousi T, Henn-Lecordier L, Liu Y, Cho S, Rubloff GW. Thickness metrology and end point control in W chemical vapor deposition process from SiH4/WF6 using in situ mass spectrometry Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2351-2360. DOI: 10.1116/1.1520555  1
2002 Gougousi T, Kelly MJ, Parsons GN. The role of the OH species in high-k/polycrystalline silicon gate electrode interface reactions Applied Physics Letters. 80: 4419-4421. DOI: 10.1063/1.1485122  1
2001 Sreenivasan R, Gougousi T, Xu Y, Kidder J, Zafiriou E, Rubloff GW. Run to run control in tungsten chemical vapor deposition using H2/WF6 at low pressures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1931-1941. DOI: 10.1116/1.1406159  1
2000 Gougousi T, Xu Y, Kidder JN, Rubloff GW, Tilford CR. Process diagnostics and thickness metrology using in situ mass spectrometry for the chemical vapor deposition of W from H2/WF6 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1352-1363. DOI: 10.1116/1.591478  1
1998 Samartzis PC, Gougousi T, Kitsopoulos TN. Photofragmentation of Cl2 at 308 NM Laser Chemistry. 17: 185-190.  1
1998 Gougousi T, Samartzis PC, Kitsopoulos TN. Photodissociation study of CH 3Br in the first continuum Journal of Chemical Physics. 108: 5742-5746.  1
1998 Skrzypkowski MP, Gougousi T, Johnsen R, Golde MF. Measurement of the absolute yield of CO(a 3Π)+ O products in the dissociative recombination of CO2+ ions with electrons Journal of Chemical Physics. 108: 8400-8407.  1
1997 Gougousi T, Golde MF, Johnsen R. Electron-ion recombination rate coefficient measurements in a flowing afterglow plasma Chemical Physics Letters. 265: 399-403.  1
1997 Gougousi T, Johnsen R, Golde MF. Yield determination of OH (v=0,1) radicals produced by the electron-ion recombination of protonated molecules Journal of Chemical Physics. 107: 2440-2443.  1
1997 Gougousi T, Johnsen R, Golde MF. Yield determination of OH(v=0,1) radicals produced by the electron-ion recombination of H3O+ ions Journal of Chemical Physics. 107: 2430-2439.  1
1997 Samartzis PC, Sakellariou I, Gougousi T, Kitsopoulos TN. Photofragmentation study of Cl 2 using ion imaging Journal of Chemical Physics. 107: 43-48.  1
1995 Gougousi T, Johnsen R, Golde MF. Recombination of H3+ and D3+ ions in a flowing afterglow plasma International Journal of Mass Spectrometry and Ion Processes. 149: 131-151. DOI: 10.1016/0168-1176(95)04248-J  1
1994 Johnsen R, Shunko EV, Gougousi T, Golde MF. Langmuir-probe measurements in flowing-afterglow plasmas Physical Review E. 50: 3994-4004. DOI: 10.1103/PhysRevE.50.3994  1
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