| Year |
Citation |
Score |
| 2016 |
Chen K, Kapadia R, Harker A, Desai S, Seuk Kang J, Chuang S, Tosun M, Sutter-Fella CM, Tsang M, Zeng Y, Kiriya D, Hazra J, Madhvapathy SR, Hettick M, Chen YZ, et al. Direct growth of single-crystalline III-V semiconductors on amorphous substrates. Nature Communications. 7: 10502. PMID 26813257 DOI: 10.1038/Ncomms10502 |
0.564 |
|
| 2015 |
Ha TJ, Chen K, Chuang S, Yu KM, Kiriya D, Javey A. Highly uniform and stable n-type carbon nanotube transistors by using positively charged silicon nitride thin films. Nano Letters. 15: 392-7. PMID 25437145 DOI: 10.1021/Nl5037098 |
0.622 |
|
| 2014 |
McDonnell S, Azcatl A, Addou R, Gong C, Battaglia C, Chuang S, Cho K, Javey A, Wallace RM. Hole contacts on transition metal dichalcogenides: interface chemistry and band alignments. Acs Nano. 8: 6265-72. PMID 24797712 DOI: 10.1021/Nn501728W |
0.718 |
|
| 2014 |
Tosun M, Chuang S, Fang H, Sachid AB, Hettick M, Lin Y, Zeng Y, Javey A. High-gain inverters based on WSe2 complementary field-effect transistors. Acs Nano. 8: 4948-53. PMID 24684575 DOI: 10.1021/Nn5009929 |
0.662 |
|
| 2014 |
Chuang S, Battaglia C, Azcatl A, McDonnell S, Kang JS, Yin X, Tosun M, Kapadia R, Fang H, Wallace RM, Javey A. MoS₂ P-type transistors and diodes enabled by high work function MoOx contacts. Nano Letters. 14: 1337-42. PMID 24568656 DOI: 10.1021/Nl4043505 |
0.731 |
|
| 2013 |
Chuang S, Gao Q, Kapadia R, Ford AC, Guo J, Javey A. Ballistic InAs nanowire transistors. Nano Letters. 13: 555-8. PMID 23256503 DOI: 10.1021/Nl3040674 |
0.545 |
|
| 2013 |
Chuang S, Kapadia R, Fang H, Chia Chang T, Yen WC, Chueh YL, Javey A. Near-ideal electrical properties of InAs/WSe2 van der Waals heterojunction diodes Applied Physics Letters. 102. DOI: 10.1063/1.4809815 |
0.605 |
|
| 2012 |
Fang H, Chuang S, Chang TC, Takei K, Takahashi T, Javey A. High-performance single layered WSe₂ p-FETs with chemically doped contacts. Nano Letters. 12: 3788-92. PMID 22697053 DOI: 10.1021/Nl301702R |
0.733 |
|
| 2012 |
Takei K, Madsen M, Fang H, Kapadia R, Chuang S, Kim HS, Liu CH, Plis E, Nah J, Krishna S, Chueh YL, Guo J, Javey A. Nanoscale InGaSb heterostructure membranes on Si substrates for high hole mobility transistors. Nano Letters. 12: 2060-6. PMID 22409386 DOI: 10.1021/Nl300228B |
0.664 |
|
| 2012 |
Fang H, Chuang S, Takei K, Kim HS, Plis E, Liu CH, Krishna S, Chueh YL, Javey A. Ultrathin-body high-mobility InAsSb-on-insulator field-effect transistors Ieee Electron Device Letters. 33: 504-506. DOI: 10.1109/Led.2012.2185477 |
0.664 |
|
| 2011 |
Kapadia R, Takei K, Ford AC, Fang H, Chuang S, Madsen M, Krishna S, Javey A. Ultra-thin compound semiconductor on insulator (XOI) for MOSFETs and TFETs Device Research Conference - Conference Digest, Drc. 13-16. DOI: 10.1109/DRC.2011.5994400 |
0.63 |
|
| 2011 |
Takei K, Chuang S, Fang H, Kapadia R, Liu C, Nah J, Sul Kim H, Plis E, Krishna S, Chueh Y, Javey A. Benchmarking the performance of ultrathin body InAs-on-insulator transistors as a function of body thickness Applied Physics Letters. 99: 103507. DOI: 10.1063/1.3636110 |
0.603 |
|
| 2011 |
Ford AC, Yeung CW, Chuang S, Kim HS, Plis E, Krishna S, Hu C, Javey A. Ultrathin body InAs tunneling field-effect transistors on Si substrates Applied Physics Letters. 98: 113105. DOI: 10.1063/1.3567021 |
0.668 |
|
| 2010 |
Ko H, Takei K, Kapadia R, Chuang S, Fang H, Leu PW, Ganapathi K, Plis E, Kim HS, Chen SY, Madsen M, Ford AC, Chueh YL, Krishna S, Salahuddin S, et al. Ultrathin compound semiconductor on insulator layers for high-performance nanoscale transistors. Nature. 468: 286-9. PMID 21068839 DOI: 10.1038/Nature09541 |
0.729 |
|
| 2010 |
Ford AC, Chuang S, Ho JC, Chueh YL, Fan Z, Javey A. Patterned p-doping of InAs nanowires by gas-phase surface diffusion of Zn. Nano Letters. 10: 509-13. PMID 20044838 DOI: 10.1021/Nl903322S |
0.711 |
|
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