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Ant Ural, Ph.D. - Publications

Affiliations: 
2001 Stanford University, Palo Alto, CA 
Area:
Electronics and Electrical Engineering
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49 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Hicks J, Li J, Ying C, Ural A. Effect of nanowire curviness on the percolation resistivity of transparent, conductive metal nanowire networks Journal of Applied Physics. 123: 204309. DOI: 10.1063/1.5029896  0.31
2017 An Y, Shekhawat A, Behnam A, Pop E, Ural A. Characterization of Graphene Gate Electrodes for Metal-Oxide-Semiconductor Devices Mrs Advances. 2: 103-108. DOI: 10.1557/Adv.2017.65  0.338
2016 An Y, Shekhawat A, Behnam A, Pop E, Ural A. Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes Applied Physics Letters. 109: 223104. DOI: 10.1063/1.4968824  0.342
2015 An Y, Behnam A, Pop E, Bosman G, Ural A. Forward-bias diode parameters, electronic noise, and photoresponse of graphene/silicon Schottky junctions with an interfacial native oxide layer Journal of Applied Physics. 118. DOI: 10.1063/1.4931142  0.338
2013 An Y, Behnam A, Pop E, Ural A. Metal-semiconductor-metal photodetectors based on graphene/p-type silicon Schottky junctions Applied Physics Letters. 102. DOI: 10.1063/1.4773992  0.339
2013 Sydoruk VA, Petrychuk MV, Ural A, Bosman G, Offenhäusser A, Vitusevich SA. Noise spectroscopy of transport properties in carbon nanotube field-effect transistors Carbon. 53: 252-259. DOI: 10.1016/J.Carbon.2012.10.056  0.303
2012 An Y, Rao H, Bosman G, Ural A. Characterization of carbon nanotube film-silicon Schottky barrier photodetectors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3690645  0.398
2012 Zhou Y, Johnson JL, Ural A, Xie H. Localized growth of carbon nanotubes on CMOS substrate at room temperature using maskless post-CMOS processing Ieee Transactions On Nanotechnology. 11: 16-20. DOI: 10.1109/Tnano.2009.2037757  0.356
2012 An Y, Rao H, Bosman G, Ural A. Random telegraph signal and 1/f noise in forward-biased single-walled carbon nanotube film-silicon Schottky junctions Applied Physics Letters. 100. DOI: 10.1063/1.4719094  0.351
2011 Behnam A, Johnson JL, An Y, Biswas A, Ural A. Electronic transport in graphitic nanoribbon films. Acs Nano. 5: 1617-22. PMID 21341738 DOI: 10.1021/Nn100855N  0.31
2011 Johnson JL, Behnam A, An Y, Pearton SJ, Ural A. Experimental study of graphitic nanoribbon films for ammonia sensing Journal of Applied Physics. 109. DOI: 10.1063/1.3597635  0.324
2010 Johnson JL, Choi Y, Ural A. Ion implanted SiO2 substrates for nucleating silicon oxide nanowire growth Materials Research Society Symposium Proceedings. 1181: 27-32. DOI: 10.1557/Proc-1181-Dd07-03  0.34
2010 Behnam A, Biswas A, Bosman G, Ural A. Temperature-dependent transport and 1/f noise mechanisms in single-walled carbon nanotube films Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.125407  0.329
2010 Behnam A, Radhakrishna NA, Wu Z, Ural A. Electronic properties of metal-semiconductor and metal-oxide-semiconductor structures composed of carbon nanotube film on silicon Applied Physics Letters. 97. DOI: 10.1063/1.3524194  0.395
2010 Sangwan VK, Behnam A, Ballarotto VW, Fuhrer MS, Ural A, Williams ED. Optimizing transistor performance of percolating carbon nanotube networks Applied Physics Letters. 97. DOI: 10.1063/1.3469930  0.318
2009 Choi Y, Johnson JL, Ural A. Patterned growth of silicon oxide nanowires from iron ion implanted SiO2 substrates. Nanotechnology. 20: 135307. PMID 19420498 DOI: 10.1088/0957-4484/20/13/135307  0.338
2008 Behnam A, Bosman G, Ural A. Percolation scaling of 1/f noise in single-walled carbon nanotube films Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.085431  0.328
2008 Behnam A, Johnson JL, Choi Y, Ertosun MG, Okyay AK, Kapur P, Saraswat KC, Ural A. Experimental characterization of single-walled carbon nanotube film-Si Schottky contacts using metal-semiconductor-metal structures Applied Physics Letters. 92. DOI: 10.1063/1.2945644  0.401
2008 Behnam A, Johnson J, Choi Y, Noriega L, Ertosun MG, Wu Z, Rinzler AG, Kapur P, Saraswat KC, Ural A. Metal-semiconductor-metal photodetectors based on single-walled carbon nanotube film-GaAs Schottky contacts Journal of Applied Physics. 103. DOI: 10.1063/1.2938037  0.374
2008 Johnson JL, Choi Y, Ural A, Lim W, Wright J, Gila B, Ren F, Pearton S. Growth and Characterization of GaN Nanowires for Hydrogen Sensors Journal of Electronic Materials. 38: 490-494. DOI: 10.1007/S11664-008-0596-Z  0.339
2007 Johnson JL, Behnam A, Choi Y, Noriega L, Ertosun G, Wu Z, Rinzler AG, Kapur P, Saraswat KC, Ural A. Metal-Semiconductor-Metal (MSM) Photodetectors Based on Single-walled Carbon Nanotube Film-GaAs Schottky Contacts Mrs Proceedings. 1057. DOI: 10.1557/Proc-1057-Ii22-05  0.317
2007 Behnam A, Choi Y, Noriega L, Wu Z, Kravchenko I, Rinzler AG, Ural A. Nanolithographic patterning of transparent, conductive single-walled carbon nanotube films by inductively coupled plasma reactive ion etching Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 348-354. DOI: 10.1116/1.2699836  0.339
2007 Behnam A, Ural A. Computational study of geometry-dependent resistivity scaling in single-walled carbon nanotube films Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.125432  0.344
2007 Behnam A, Guo J, Ural A. Effects of nanotube alignment and measurement direction on percolation resistivity in single-walled carbon nanotube films Journal of Applied Physics. 102. DOI: 10.1063/1.2769953  0.35
2006 Choi Y, Johnson J, Moreau R, Perozziello E, Ural A. Micromachined silicon transmission electron microscopy grids for direct characterization of as-grown nanotubes. Nanotechnology. 17: 4635-9. PMID 21727588 DOI: 10.1088/0957-4484/17/18/017  0.381
2006 Choi Y, Johnson J, Moreau R, Perozziello E, Ural A. Micromachined silicon grids for direct TEM characterization of carbon nanotubes grown by CVD Materials Research Society Symposium Proceedings. 963: 76-81. DOI: 10.1557/Proc-0963-Q20-13  0.383
2006 Behnam A, Noriega L, Choi Y, Wu Z, Rinzler AG, Ural A. Geometry dependent resistivity in single-walled carbon nanotube films patterned down to submicron dimensions Materials Research Society Symposium Proceedings. 963: 241-246. DOI: 10.1557/Proc-0963-Q10-55  0.343
2006 Choi Y, Sippel-Oakley J, Ural A. Single-walled carbon nanotube growth from ion implanted Fe catalyst Applied Physics Letters. 89. DOI: 10.1063/1.2360889  0.324
2006 Behnam A, Noriega L, Choi Y, Wu Z, Rinzler AG, Ural A. Resistivity scaling in single-walled carbon nanotube films patterned to submicron dimensions Applied Physics Letters. 89. DOI: 10.1063/1.2339029  0.337
2005 Choi Y, Oakley JS, Rinzler A, Ural A. Carbon Nanotube Growth from Nanoscale Clusters Formed by Ion Implantation Mrs Proceedings. 908. DOI: 10.1557/Proc-0908-Oo15-03  0.337
2004 Nojeh A, Ural A, Pease RF, Dai H. Electric-field-directed growth of carbon nanotubes in two dimensions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 3421-3425. DOI: 10.1116/1.1821578  0.34
2004 Li Y, Mann D, Rolandi M, Kim W, Ural A, Hung S, Javey A, Cao J, Wang D, Yenilmez E, Wang Q, Gibbons JF, Nishi Y, Dai H. Preferential Growth of Semiconducting Single-Walled Carbon Nanotubes by a Plasma Enhanced CVD Method Nano Letters. 4: 317-321. DOI: 10.1021/Nl035097C  0.346
2002 Javey A, Kim H, Brink M, Wang Q, Ural A, Guo J, McIntyre P, McEuen P, Lundstrom M, Dai H. High-kappa dielectrics for advanced carbon-nanotube transistors and logic gates. Nature Materials. 1: 241-6. PMID 12618786 DOI: 10.1038/Nmat769  0.364
2002 Ural A, Griffin PB, Plummer JD. Atomic-scale diffusion mechanisms via intermediate species Physical Review B. 65. DOI: 10.1103/Physrevb.65.134303  0.571
2002 Ural A, Li Y, Dai H. Electric-field-aligned growth of single-walled carbon nanotubes on surfaces Applied Physics Letters. 81: 3464-3466. DOI: 10.1063/1.1518773  0.322
2002 Javey A, Wang Q, Ural A, Li Y, Dai H. Carbon Nanotube Transistor Arrays for Multistage Complementary Logic and Ring Oscillators Nano Letters. 2: 929-932. DOI: 10.1021/Nl025647R  0.322
2001 Ural A, Griffin PB, Plummer JD. Silicon self-diffusion under extrinsic conditions Applied Physics Letters. 79: 4328-4330. DOI: 10.1063/1.1425953  0.6
2000 Ural A, Griffin PB, Plummer JD. Ural, griffin, and plummer reply: Physical Review Letters. 85: 4836. PMID 11082665 DOI: 10.1103/Physrevlett.85.4836  0.432
2000 Ural A, Koh S, Griffin PB, Plummer JD. What Does Self-Diffusion Tell Us about Ultra Shallow Junctions? Mrs Proceedings. 610. DOI: 10.1557/Proc-610-B4.11  0.617
2000 Ural A, Koh S, Griffin PB, Plummer JD. What does self-diffusion tell us about ultra shallow junctions? Materials Research Society Symposium - Proceedings. 610.  0.38
1999 Ural A, Griffin PB, Plummer JD. Experimental Study of Self-Diffusion in Silicon Using Isotopically Enriched Structures Mrs Proceedings. 568. DOI: 10.1557/Proc-568-97  0.621
1999 Ural A, Griffin PB, Plummer JD. Self-Diffusion in Silicon: Similarity between the Properties of Native Point Defects Physical Review Letters. 83: 3454-3457. DOI: 10.1103/Physrevlett.83.3454  0.597
1999 Ural A, Griffin PB, Plummer JD. Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon Journal of Applied Physics. 85: 6440-6446. DOI: 10.1063/1.370285  0.606
1999 Ural A, Griffin PB, Plummer JD. Nonequilibrium experiments on self-diffusion in silicon at low temperatures using isotopically enriched structures Physica B: Condensed Matter. 273: 512-515. DOI: 10.1016/S0921-4526(99)00541-4  0.623
1999 Ural A, Griffin PB, Plummer JD. Self-Diffusion in Silicon: Similarity between the Properties of Native Point Defects Physical Review Letters. 83: 3454-3457.  0.365
1999 Ural A, Griffin PB, Plummer JD. Experimental study of self-diffusion in silicon using isotopically enriched structures Materials Research Society Symposium - Proceedings. 568: 97-102.  0.387
1999 Ural A, Griffin PB, Plummer JD. Fractional contributions of microscopic diffusion mechanisms for common dopants and self-diffusion in silicon Journal of Applied Physics. 85: 6440-6446.  0.363
1998 Caturla MJ, Rubia TDdl, Griffin PB, Johnson MC, Theiss S, Ural A. Linking ab initio Energetics to Experiment: Kinetic Monte Carlo Simulation of Transient Enhanced Diffusion of B in Si Mrs Proceedings. 538: 291. DOI: 10.1557/Proc-538-291  0.355
1998 Ural A, Griffin PB, Plummer JD. Experimental evidence for a dual vacancy-interstitial mechanism of self-diffusion in silicon Applied Physics Letters. 73: 1706-1708. DOI: 10.1063/1.122252  0.604
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