Neeraj Nepal, Ph.D. - Publications

Affiliations: 
2006 Kansas State University, Manhattan, KS, United States 
Area:
Condensed Matter Physics, Optics Physics

71 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Nepal N, Scott Katzer D, Meyer DJ, Downey BP, Wheeler VD, Storm DF, Hardy MT. Characterization of molecular beam epitaxy grown β-Nb2N films and AlN/β-Nb2N heterojunctions on 6H-SiC substrates Applied Physics Express. 9. DOI: 10.7567/APEX.9.021003  0.84
2016 Hardy MT, McConkie TO, Smith DJ, Storm DF, Downey BP, Katzer DS, Meyer DJ, Nepal N. Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4940759  0.84
2016 Downey BP, Katzer DS, Nepal N, Meyer DJ, Storm DF, Wheeler VD, Hardy MT. Electrical characterisation of epitaxial AlN/Nb2N heterostructures grown by molecular beam epitaxy Electronics Letters. 52: 1263-1264. DOI: 10.1049/el.2016.0331  0.84
2016 El-Masry NA, Zavada JM, Nepal N, Bedair SM. Ferromagnetic behavior in transition metal-doped III-N semiconductors Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics. 395-433. DOI: 10.1016/B978-0-08-100041-0.00012-3  0.84
2016 Metcalfe GD, Readinger ED, Woodward N, Dierolf V, Nepal N, Zavada JM. Optical and magnetic characterization of III-N: Nd grown by molecular beam epitaxy Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics. 281-312. DOI: 10.1016/B978-0-08-100041-0.00009-3  0.84
2016 Nepal N, Jiang HX, Lin JY, Mitchell B, Dierolf V, Zavada JM. MOCVD growth of Er-doped III-N and optical-magnetic characterization Rare Earth and Transition Metal Doping of Semiconductor Materials: Synthesis, Magnetic Properties and Room Temperature Spintronics. 225-257. DOI: 10.1016/B978-0-08-100041-0.00007-X  0.84
2016 Meyer DJ, Downey BP, Anderson TJ, Katzer DS, Nepal N, Wheeler VD, Storm DF, Hardy MT. Epitaxial lift-off and transfer of III-N materials and devices from SiC Cs Mantech 2016 - International Conference On Compound Semiconductor Manufacturing Technology. 195-200.  0.84
2015 Katzer DS, Nepal N, Meyer DJ, Downey BP, Wheeler VD, Storm DF, Hardy MT. Epitaxial metallic β-Nb2N films grown by MBE on hexagonal SiC substrates Applied Physics Express. 8. DOI: 10.7567/APEX.8.085501  0.84
2015 Hossain T, Wei D, Edgar JH, Garces NY, Nepal N, Hite JK, Mastro MA, Eddy CR, Meyer HM. Effect of GaN surface treatment on Al2O3/ n -GaN MOS capacitors Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4931793  0.84
2015 Acharya AR, Thoms BD, Nepal N, Eddy CR. Surface structure and surface kinetics of InN grown by plasma-assisted atomic layer epitaxy: A HREELS study Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4901873  0.84
2015 Nepal N, Anderson VR, Hite JK, Eddy CR. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures Thin Solid Films. 589: 47-51. DOI: 10.1016/j.tsf.2015.04.068  0.84
2015 Hardy MT, Storm DF, Nepal N, Katzer DS, Downey BP, Meyer DJ. Indium incorporation dynamics in N-polar InAlN thin films grown by plasma-assisted molecular beam epitaxy on freestanding GaN substrates Journal of Crystal Growth. DOI: 10.1016/j.jcrysgro.2015.02.045  0.84
2014 Katzer DS, Meyer DJ, Storm DF, Nepal N, Wheeler VD. Silicon nitride thin films deposited using electron-beam evaporation in an RF plasma MBE system Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4867435  0.84
2014 Nepal N, Goswami R, Qadri SB, Mahadik NA, Kub FJ, Eddy CR. Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy Scripta Materialia. 93: 44-47. DOI: 10.1016/j.scriptamat.2014.08.027  0.84
2014 Wei D, Hossain T, Nepal N, Garces NY, Hite JK, Meyer HM, Eddy CR, Edgar JH. Comparison of the physical, chemical and electrical properties of ALD Al2O3 on c- and m- plane GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 898-901. DOI: 10.1002/pssc.201300677  0.84
2014 Hossain T, Wei D, Nepal N, Garces NY, Hite JK, Meyer HM, Eddy CR, Baker T, Mayo A, Schmitt J, Edgar JH. Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 565-568. DOI: 10.1002/pssc.201300659  0.84
2013 Nepal N, Wheeler VD, Anderson TJ, Kub FJ, Mastro MA, Myers-Ward RL, Qadri SB, Freitas JA, Hernandez SC, Nyakiti LO, Walton SG, Gaskill K, Eddy CR. Epitaxial growth of III-nitride/graphene heterostructures for electronic devices Applied Physics Express. 6. DOI: 10.7567/APEX.6.061003  0.84
2013 Mastro MA, Nepal N, Kub F, Hite JK, Kim J, Eddy CR. Nickel foam as a substrate for III-nitride nanowire growth Materials Research Society Symposium Proceedings. 1538: 311-316. DOI: 10.1557/opl.2013.504  0.84
2013 Wei D, Hossain T, Garces NY, Nepal N, Meyer HM, Kirkham MJ, Eddy CR, Edgar JH. Influence of atomic layer deposition temperatures on TiO2/n-Si MOS capacitor Ecs Journal of Solid State Science and Technology. 2: N110-N114. DOI: 10.1149/2.010305jss  0.84
2013 Anderson TJ, Koehler AD, Tadjer MJ, Hobart KD, Nepal N, Feygelson TI, Pate BB, Eddy CR, Kub FJ. Improved passivation techniques for AlGaN/GaN HEMTs Ecs Transactions. 58: 41-46. DOI: 10.1149/05808.0041ecst  0.84
2013 Eddy CR, Anderson TJ, Koehler AD, Nepal N, Meyer DJ, Tadjer MJ, Baranyai R, Pomeroy JW, Kuball M, Feygelson TI, Pate BB, Mastro MA, Hite JK, Ancona MG, Kub FJ, et al. GaN power transistors with integrated thermal management Ecs Transactions. 58: 279-286. DOI: 10.1149/05804.0279ecst  0.84
2013 Eddy CR, Nepal N, Hite JK, Mastro MA. Perspectives on future directions in III-N semiconductor research Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4813687  0.84
2013 Koehler AD, Nepal N, Anderson TJ, Tadjer MJ, Hobart KD, Eddy CR, Kub FJ. Atomic layer epitaxy AlN for enhanced AlGaN/GaN HEMT passivation Ieee Electron Device Letters. 34: 1115-1117. DOI: 10.1109/LED.2013.2274429  0.84
2013 Nepal N, Qadri SB, Hite JK, Mahadik NA, Mastro MA, Eddy CR. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy Applied Physics Letters. 103. DOI: 10.1063/1.4818792  0.84
2013 Nepal N, Mahadik NA, Nyakiti LO, Qadri SB, Mehl MJ, Hite JK, Eddy CR. Epitaxial growth of cubic and hexagonal InN thin films via plasma-assisted atomic layer epitaxy Crystal Growth and Design. 13: 1485-1490. DOI: 10.1021/cg3016172  0.84
2013 Frajtag P, Nepal N, Paskova T, Bedair SM, El-Masry NA. Multifacet semipolar formation by controlling the groove depth via lateral sidewall epitaxy Journal of Crystal Growth. 367: 88-93. DOI: 10.1016/j.jcrysgro.2012.12.039  0.84
2013 Koehler AD, Nepal N, Anderson TJ, Tadjer MJ, Hobart KD, Eddy CR, Kub FJ. Investigation of AlGaN/GaN HEMTS passivated by AlN films grown by atomic layer epitaxy 2013 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2013. 135-138.  0.84
2011 Nepal N, Garces NY, Meyer DJ, Hite JK, Mastro MA, Eddy CR. Assessment of GaN surface pretreatment for atomic layer deposited high-K dielectrics Applied Physics Express. 4. DOI: 10.1143/APEX.4.055802  0.84
2011 Kim BJ, Jung Y, Mastro MA, Hite J, Nepal N, Eddy CR, Kim J. Emission enhancement from nonpolar a-plane III-nitride nanopillar Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3545696  0.84
2011 Woodward NT, Nepal N, Mitchell B, Feng IW, Li J, Jiang HX, Lin JY, Zavada JM, Dierolf V. Enhanced magnetization in erbium doped GaN thin films due to strain induced electric fields Applied Physics Letters. 99. DOI: 10.1063/1.3643041  0.84
2011 Garces NY, Wheeler VD, Hite JK, Jernigan GG, Tedesco JL, Nepal N, Eddy CR, Gaskill DK. Epitaxial graphene surface preparation for atomic layer deposition of Al 2O 3 Journal of Applied Physics. 109. DOI: 10.1063/1.3596761  0.84
2011 Frajtag P, Hosalli AM, Bradshaw GK, Nepal N, El-Masry NA, Bedair SM. Improved light-emitting diode performance by conformal overgrowth of multiple quantum wells and fully coalesced p-type GaN on GaN nanowires Applied Physics Letters. 98. DOI: 10.1063/1.3572032  0.84
2011 Frajtag P, El-Masry NA, Nepal N, Bedair SM. Embedded voids approach for low defect density in epitaxial GaN films Applied Physics Letters. 98. DOI: 10.1063/1.3540680  0.84
2011 Frajtag P, Samberg JP, El-Masry NA, Nepal N, Bedair SM. Embedded voids formation by overgrowth on gaN nanowires for high-quality gaN films Journal of Crystal Growth. 322: 27-32. DOI: 10.1016/j.jcrysgro.2011.02.032  0.84
2011 Nepal N, Frajtag P, Zavada JM, El-Masry NA, Bedair SM. Light emitting diodes based on sidewall m-plane epitaxy of etched GaN/sapphire templates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2354-2356. DOI: 10.1002/pssc.201000983  0.84
2010 Wang R, Steckl AJ, Nepal N, Zavada JM. Electrical and magnetic properties of GaN codoped with Eu and Si Journal of Applied Physics. 107. DOI: 10.1063/1.3275508  0.84
2010 Nepal N, Oliver Luen M, Frajtag P, Zavada JM, Bedair SM, El-Masry NA. Manipulation of room temperature ferromagnetic behavior of GaMnN epilayers Materials Research Society Symposium Proceedings. 1198: 51-56.  0.84
2009 Nepal N, Zavada JM, Dahal R, Ugolini C, Sedhain A, Lin JY, Jiang HX. Optical enhancement of room temperature ferromagnetism in Er-doped GaN epilayers Applied Physics Letters. 95. DOI: 10.1063/1.3176972  0.84
2009 Nepal N, Luen MO, Zavada JM, Bedair SM, Frajtag P, El-Masry NA. Electric field control of room temperature ferromagnetism in III-N dilute magnetic semiconductor films Applied Physics Letters. 94. DOI: 10.1063/1.3110963  0.84
2009 Nepal N, Zavada JM, Lee DS, Steckl AJ, Sedhain A, Lin JY, Jiang HX. Deep ultraviolet photoluminescence of Tm-doped AlGaN alloys Applied Physics Letters. 94. DOI: 10.1063/1.3097808  0.84
2009 Nakarmi ML, Nepal N, Lin JY, Jiang HX. Photoluminescence studies of impurity transitions in Mg-doped AlGaN alloys Applied Physics Letters. 94. DOI: 10.1063/1.3094754  0.84
2009 Luen MO, Nepal N, Frajtag P, Zavada JM, Brown E, Hommerich U, Bedair SM, El-Masry NA. Ferromagnetism and near-infrared luminescence in neodymium and erbium doped gallium nitride via diffusion Materials Research Society Symposium Proceedings. 1183: 45-50.  0.84
2008 Nepal N, Zavada JM, Lee DS, Steckl AJ. Dynamics of ultraviolet emissions in Tm-doped AlN using above band gap excitation Applied Physics Letters. 93. DOI: 10.1063/1.2970993  0.84
2008 Sedhain A, Nepal N, Nakarmi ML, Al Tahtamouni TM, Lin JY, Jiang HX, Gu Z, Edgar JH. Photoluminescence properties of AlN homoepilayers with different orientations Applied Physics Letters. 93. DOI: 10.1063/1.2965613  0.84
2007 Nepal N, Mahros AM, Bedair SM, El-Masry NA, Zavada JM. Correlation between photoluminescence and magnetic properties of GaMnN films Applied Physics Letters. 91. DOI: 10.1063/1.2823602  0.84
2007 Nepal N, Bedair SM, El-Masry NA, Lee DS, Steckl AJ, Zavada JM. Correlation between compositional fluctuation and magnetic properties of Tm-doped AlGaN alloys Applied Physics Letters. 91. DOI: 10.1063/1.2817741  0.84
2007 Pantha BN, Nepal N, Al Tahtamouni TM, Nakarmi ML, Li J, Lin JY, Jiang HX. Correlation between biaxial stress and free exciton transition in AlN epilayers Applied Physics Letters. 91. DOI: 10.1063/1.2789182  0.84
2007 Zavada JM, Nepal N, Ugolini C, Lin JY, Jiang HX, Davies R, Hite J, Abernathy CR, Pearton SJ, Brown EE, Hömmerich U. Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition Applied Physics Letters. 91. DOI: 10.1063/1.2767992  0.84
2007 Khan N, Nepal N, Sedhain A, Lin JY, Jiang HX. Mg acceptor level in InN epilayers probed by photoluminescence Applied Physics Letters. 91. DOI: 10.1063/1.2753537  0.84
2007 Pantha BN, Dahal R, Nakarmi ML, Nepal N, Li J, Lin JY, Jiang HX, Paduano QS, Weyburne D. Correlation between optoelectronic and structural properties and epilayer thickness of AlN Applied Physics Letters. 90. DOI: 10.1063/1.2747662  0.84
2007 Ugolini C, Nepal N, Lin JY, Jiang HX, Zavada JM. Excitation dynamics of the 1.54 μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition Applied Physics Letters. 90. DOI: 10.1063/1.2450641  0.84
2006 Nepal N, Nakarmi ML, Lin JY, Jiang HX. Time-resolved photoluminescence studies of Mg-doped AlN epilayers Proceedings of Spie - the International Society For Optical Engineering. 6118. DOI: 10.1117/12.651856  0.84
2006 Nepal N, Nakarmi ML, Jang HU, Lin JY, Jiang HX. Growth and photoluminescence studies of Zn-doped AlN epilayers Applied Physics Letters. 89. DOI: 10.1063/1.2387869  0.84
2006 Nakarmi ML, Nepal N, Ugolini C, Altahtamouni TM, Lin JY, Jiang HX. Correlation between optical and electrical properties of Mg-doped AlN epilayers Applied Physics Letters. 89. DOI: 10.1063/1.2362582  0.84
2006 Ugolini C, Nepal N, Lin JY, Jiang HX, Zavada JM. Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition Applied Physics Letters. 89. DOI: 10.1063/1.2361196  0.84
2006 Al Tahtamouni TM, Nepal N, Lin JY, Jiang HX, Chow WW. Growth and photoluminescence studies of Al-rich AlN/Al xGa 1-xN quantum wells Applied Physics Letters. 89. DOI: 10.1063/1.2358107  0.84
2006 Zavada JM, Nepal N, Lin JY, Jiang HX, Brown E, Hömmerich U, Hite J, Thaler GT, Abernathy CR, Pearton SJ, Gwilliam R. Ultraviolet photoluminescence from Gd-implanted AlN epilayers Applied Physics Letters. 89. DOI: 10.1063/1.2357552  0.84
2006 Nepal N, Nakarmi ML, Lin J, Jiang HX. Photoluminescence studies of impurity transitions in AlGaN alloys Applied Physics Letters. 89. DOI: 10.1063/1.2337856  0.84
2006 Nepal N, Nam KB, Li J, Nakarmi ML, Lin JY, Jiang HX. Higher lying conduction band in GaN and AlN probed by photoluminescence spectroscopy Applied Physics Letters. 88. DOI: 10.1063/1.2217160  0.84
2006 Nepal N, Shakya J, Nakarmi ML, Lin JY, Jiang HX. Deep ultraviolet photoluminescence studies of AlN photonic crystals Applied Physics Letters. 88. DOI: 10.1063/1.2190452  0.84
2006 Nepal N, Li J, Nakarmi ML, Lin JY, Jiang HX. Exciton localization in AlGaN alloys Applied Physics Letters. 88. DOI: 10.1063/1.2172728  0.84
2006 Gu Z, Du L, H. Edgar J, Nepal N, Lin JY, Jiang HX, Witt R. Sublimation growth of aluminum nitride crystals Journal of Crystal Growth. 297: 105-110. DOI: 10.1016/j.jcrysgro.2006.09.038  0.84
2006 Al Tantamount TM, Nepal N, Lin J, Jiang H. Al rich AlN/AlGaN quantum wells Materials Research Society Symposium Proceedings. 955: 13-18.  0.84
2006 Zavada JM, Nepal N, Lin J, Kim KH, Jiang HX, Hite J, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ. Photoluminescence from Gd-implanted AlN and GaN epilayers Materials Research Society Symposium Proceedings. 955: 400-403.  0.84
2005 Nepal N, Nam KB, Li J, Lin JY, Jiang HX. Carrier dynamics in AlN and GaN epilayers at the elevated temperatures Proceedings of Spie - the International Society For Optical Engineering. 5725: 119-125. DOI: 10.1117/12.590917  0.84
2005 Nepal N, Li J, Nakarmi ML, Lin JY, Jiang HX. Temperature and compositional dependence of the energy band gap of AlGaN alloys Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2142333  0.84
2005 Nakarmi ML, Nepal N, Lin JY, Jiang HX. Unintentionally doped n-type Al 0.67Ga 0.33N epilayers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1954875  0.84
2004 Nepal N, Nakarmi ML, Nam KB, Lin JY, Jiang HX. Acceptor-bound exciton transition in Mg-doped AIN epilayer Applied Physics Letters. 85: 2271-2273. DOI: 10.1063/1.1796521  0.84
2004 Nepal N, Nam KB, Nakarmi ML, Lin JY, Jiang HX, Zavada JM, Wilson RG. Optical properties of the nitrogen vacancy in AlN epilayers Applied Physics Letters. 84: 1090-1092. DOI: 10.1063/1.1648137  0.84
2004 Zavada JM, Jin SX, Nepal N, Lin JY, Jiang HX, Chow P, Hertog B. Electroluminescent properties of erbium-doped III-N light-emitting diodes Applied Physics Letters. 84: 1061-1063. DOI: 10.1063/1.1647271  0.84
2004 Nyein EE, Hömmerich U, Zavada JM, Lee DS, Steckl AJ, Nepal N, Lin JY, Jiang HX. Ultraviolet and blue emission properties of Tm doped AlGaN and AlN Osa Trends in Optics and Photonics Series. 96: 1281-1282.  0.84
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