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Edwin C. Kan - Publications

Affiliations: 
Electrical and Computer Engineering Cornell University, Ithaca, NY, United States 
Area:
Electronics and Electrical Engineering, Computer Engineering, Materials Science Engineering
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82 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Kim M, Wu YS, Kan EC, Fan J. Breathable and Flexible Piezoelectric ZnO@PVDF Fibrous Nanogenerator for Wearable Applications. Polymers. 10. PMID 30960670 DOI: 10.3390/Polym10070745  0.433
2016 Auluck K, Kan EC. Circuit Models for Ferroelectrics—Part II: Analysis of FE-Nonvolatile Latches Ieee Transactions On Electron Devices. 63: 637-642. DOI: 10.1109/Ted.2015.2506644  0.32
2016 Auluck K, Kan EC. Circuit models for ferroelectrics - Part I: Physics of polarization switching Ieee Transactions On Electron Devices. 63: 631-636. DOI: 10.1109/Ted.2015.2506632  0.32
2016 Gordon PH, Jayant K, Cao Y, Auluck K, Phelps J, Kan EC. Critical Assessment on Modeling and Design of Nonfaradaic CMOS Electrochemical Sensing Ieee Sensors Journal. 16: 3367-3373. DOI: 10.1109/Jsen.2015.2445292  0.335
2015 Tung LT, Kan EC. Sharp switching by field-effect bandgap modulation in all-graphene side-gate transistors Ieee Journal of the Electron Devices Society. 3: 144-148. DOI: 10.1109/Jeds.2015.2397694  0.378
2014 Jayant K, Auluck K, Rodriguez S, Cao Y, Kan EC. Programmable ion-sensitive transistor interfaces. III. Design considerations, signal generation, and sensitivity enhancement. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 89: 052817. PMID 25353854 DOI: 10.1103/Physreve.89.052817  0.354
2014 Auluck K, Kan EC, Rajwade SR. A unified circuit model for ferroelectrics International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 149-152. DOI: 10.1109/SISPAD.2014.6931585  0.756
2013 Jayant K, Auluck K, Funke M, Anwar S, Phelps JB, Gordon PH, Rajwade SR, Kan EC. Programmable ion-sensitive transistor interfaces. II. Biomolecular sensing and manipulation. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 88: 012802. PMID 23944513 DOI: 10.1103/Physreve.88.012802  0.766
2013 Jayant K, Auluck K, Funke M, Anwar S, Phelps JB, Gordon PH, Rajwade SR, Kan EC. Programmable ion-sensitive transistor interfaces. I. Electrochemical gating. Physical Review. E, Statistical, Nonlinear, and Soft Matter Physics. 88: 012801. PMID 23944512 DOI: 10.1103/Physreve.88.012801  0.773
2013 Rajwade SR, Auluck K, Naoi TA, Jayant K, Kan EC. Dynamic modeling of dual speed ferroelectric and charge hybrid memory Ieee Transactions On Electron Devices. 60: 3378-3384. DOI: 10.1109/Ted.2013.2279259  0.792
2013 Rajwade SR, Naoi TA, Auluck K, Jayant K, Van Dover RB, Kan EC. Ferroelectric-assisted dual-switching speed DRAM-flash hybrid memory Ieee Transactions On Electron Devices. 60: 1944-1950. DOI: 10.1109/Ted.2013.2257787  0.811
2013 Rajwade SR, Auluck K, Jayant K, Kan EC, Naoi TA, Van Dover RB. Towards DRAM-Flash hybrid: Dual-speed low-voltage ferroelectric and charge memory 2013 5th Ieee International Memory Workshop, Imw 2013. 166-169. DOI: 10.1109/IMW.2013.6582125  0.792
2013 Auluck K, Rajwade SR, Kan EC. Design considerations for FE-charge DRAM-Flash hybrid memory Device Research Conference - Conference Digest, Drc. 177-178. DOI: 10.1109/DRC.2013.6633851  0.772
2012 Shaw J, Xu Q, Rajwade S, Hou TH, Kan EC. Redox molecules for a resonant tunneling barrier in nonvolatile memory Ieee Transactions On Electron Devices. 59: 1189-1198. DOI: 10.1109/Ted.2012.2184797  0.803
2012 Rajwade SR, Auluck K, Phelps JB, Lyon KG, Shaw JT, Kan EC. A ferroelectric and charge hybrid nonvolatile memory - Part II: Experimental validation and analysis Ieee Transactions On Electron Devices. 59: 450-458. DOI: 10.1109/Ted.2011.2175397  0.816
2012 Rajwade SR, Auluck K, Phelps JB, Lyon KG, Shaw JT, Kan EC. A ferroelectric and charge hybrid nonvolatile memory - Part I: Device concept and modeling Ieee Transactions On Electron Devices. 59: 441-449. DOI: 10.1109/Ted.2011.2175396  0.811
2012 Yu F, Lyon KG, Kan EC. A low-power UWB-IR transmitter by tapered nonlinear transmission lines Ieee Microwave and Wireless Components Letters. 22: 618-620. DOI: 10.1109/Lmwc.2012.2226020  0.773
2012 Auluck K, Rajwade S, Kan EC. Switching dynamics in ferroelectric-charge hybrid nonvolatile memory Device Research Conference - Conference Digest, Drc. 133-134. DOI: 10.1109/DRC.2012.6257000  0.778
2012 Shaw JT, Tseng HW, Rajwade S, Tung LT, Buhrman RA, Kan EC. Interface and oxide quality of CoFeB/MgO/Si tunnel junctions Journal of Applied Physics. 111. DOI: 10.1063/1.4709766  0.746
2011 Xu SQ, Shaw J, Kan EC. Probing the orbital levels of engineered fullerenic molecules from a nonvolatile memory cell Materials Research Society Symposium Proceedings. 1286: 114-119. DOI: 10.1557/Opl.2011.235  0.393
2011 Shaw J, Zhong YW, Hughes KJ, Hou TH, Raza H, Rajwade S, Bellfy J, Engstrom JR, Abruña HD, Kan EC. Integration of self-assembled redox molecules in flash memory devices Ieee Transactions On Electron Devices. 58: 826-834. DOI: 10.1109/Ted.2010.2097266  0.82
2011 Rajwade SR, Auluck K, Shaw J, Lyon K, Kan EC. A hybrid ferroelectric and charge nonvolatile memory Device Research Conference - Conference Digest, Drc. 169-170. DOI: 10.1109/DRC.2011.5994474  0.774
2011 Lee J, Cha JJ, Barron S, Muller DA, Bruce Van Dover R, Amponsah EK, Hou TH, Raza H, Kan EC. Stackable nonvolatile memory with ultra thin polysilicon film and low-leakage (Ti, Dy)xOy for low processing temperature and low operating voltages Microelectronic Engineering. 88: 3462-3465. DOI: 10.1016/J.Mee.2009.04.021  0.735
2011 Jayant K, Phelps JB, Kan EC. Nanoscale Repulsive and Attractive Forces on Transistors - a Study of DNA Interaction with Non Volatile Charge Biophysical Journal. 100. DOI: 10.1016/J.Bpj.2010.12.2773  0.353
2010 Yu F, Lyon KG, Kan EC. A novel passive RFID transponder using harmonic generation of nonlinear transmission lines Ieee Transactions On Microwave Theory and Techniques. 58: 4121-4127. DOI: 10.1109/Tmtt.2010.2088134  0.774
2010 Lyon KG, Yu F, Kan EC. A UWB-IR transmitter using frequency conversion in nonlinear transmission lines with 16 pJ/pulse energy consumption Ieee Transactions On Microwave Theory and Techniques. 58: 3617-3625. DOI: 10.1109/Tmtt.2010.2086370  0.77
2010 Yu F, Lyon KG, Kan EC. Harmonic generation from integrated nonlinear transmission lines for RFID applications Ieee Mtt-S International Microwave Symposium Digest. 844-847. DOI: 10.1109/MWSYM.2010.5518001  0.771
2010 Li X, Kan EC. A wireless low-range pressure sensor based on P(VDF-TrFE) piezoelectric resonance Sensors and Actuators, a: Physical. 163: 457-463. DOI: 10.1016/J.Sna.2010.08.022  0.321
2010 Jayant K, Singhai A, Phelps JB, Erickson JW, Lindau M, Holowka DA, Baird BA, Kan EC. Electrochemical Detection of Signalling Responses in Excitatory and Non Excitatory Cells using Chemoreceptive Neuron MOS Transistors(CVMOS) Biophysical Journal. 98: 195a. DOI: 10.1016/J.Bpj.2009.12.1035  0.304
2009 Shaw J, Hou TH, Raza H, Kan EC. Statistical metrology of metal nanocrystal emories with 3-D finite-element analysis Ieee Transactions On Electron Devices. 56: 1729-1735. DOI: 10.1109/Ted.2009.2024108  0.594
2009 Yu F, Lyon KG, Kan EC. Tunable nonlinear transmission lines with switched varactors Proceedings - Ieee International Symposium On Circuits and Systems. 2077-2080. DOI: 10.1109/ISCAS.2009.5118203  0.773
2009 Lyon KG, Yu F, Kan EC. Space efficient CMOS nonlinear transmission lines Proceedings - Ieee International Symposium On Circuits and Systems. 2073-2076. DOI: 10.1109/ISCAS.2009.5118202  0.775
2009 Rajwade S, Arora H, Shaw J, Wiesner U, Kan EC. "Nothing" can be better: Study of porosity in the charge trap layer of flash memory Device Research Conference - Conference Digest, Drc. 235-236. DOI: 10.1109/DRC.2009.5354971  0.764
2009 Lee J, Cha JJ, Naoi T, Muller DA, Van Dover RB, Raza H, Kan EC. Ni-based self-aligned silicidation (SAS) process on source and drain for planar polysilicon TFT low-voltage flash memory cell Device Research Conference - Conference Digest, Drc. 97-98. DOI: 10.1109/DRC.2009.5354858  0.319
2008 Jacquot BC, Muñoz N, Branch DW, Kan EC. Non-Faradaic electrochemical detection of protein interactions by integrated neuromorphic CMOS sensors. Biosensors & Bioelectronics. 23: 1503-11. PMID 18281208 DOI: 10.1016/J.Bios.2008.01.006  0.76
2008 Hou TH, Lee J, Shaw JT, Kan EC. Flash memory scaling: From material selection to performance improvement Materials Research Society Symposium Proceedings. 1071: 3-15. DOI: 10.1557/Proc-1071-F02-01  0.717
2008 Lyon KG, Kan EC. Microwave pulse generation using the Bragg cutoff of a nonlinear transmission line Ieee Mtt-S International Microwave Symposium Digest. 1461-1464. DOI: 10.1109/MWSYM.2008.4633055  0.772
2008 Hou TH, Raza H, Afshari K, Ruebusch DJ, Kan EC. Nonvolatile memory with molecule-engineered tunneling barriers Applied Physics Letters. 92. DOI: 10.1063/1.2911741  0.625
2008 Raza H, Kan EC. An atomistic quantum transport solver with dephasing for field-effect transistors Journal of Computational Electronics. 7: 423-426. DOI: 10.1007/S10825-008-0231-5  0.342
2007 Ganguly U, Lee C, Hou TH, Kan EC. Enhanced electrostatics for low-voltage operations in nanocrystal based nanotube/nanowire memories Ieee Transactions On Nanotechnology. 6: 22-28. DOI: 10.1109/Tnano.2006.888529  0.787
2007 Narayanan V, Kan EC. A madelung fluid based density gradient model for large barrier tunneling calculations International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 318-321. DOI: 10.1109/SISPAD.2006.282899  0.447
2007 Hou TH, Ganguly U, Kan EC. Fermi-level pinning in nanocrystal memories Ieee Electron Device Letters. 28: 103-106. DOI: 10.1109/Led.2006.889248  0.727
2007 Jacquot BC, Lee C, Shen YN, Kan EC. Time-resolved charge transport sensing by chemoreceptive neuron MOS transistors (CvMOS) with microfluidic channels Ieee Sensors Journal. 7: 1429-1434. DOI: 10.1109/Jsen.2007.904893  0.767
2007 Jacquot BC, Muñoz NL, Branche DW, Kan EC. Real-time protein binding detection with neuromorphic integrated sensor Proceedings of Ieee Sensors. 678-681. DOI: 10.1109/ICSENS.2007.4388490  0.746
2006 Jacquot BC, Muñoz N, Kan EC. Electrolyte pulse current measurements by CvMOS with microsecond and thermal voltage resolution. Conference Proceedings : ... Annual International Conference of the Ieee Engineering in Medicine and Biology Society. Ieee Engineering in Medicine and Biology Society. Annual Conference. 1: 1846-9. PMID 17945675 DOI: 10.1109/IEMBS.2006.260209  0.76
2006 Ni W, Kim J, Kan E. FMR Effects on Integrated Ferromagnetic Thin-film RF Inductors Mrs Proceedings. 984. DOI: 10.1557/Proc-984-0984-Mm15-02  0.534
2006 Ganguly U, Hou T, Kan E. Effects of Metal Nanocrystals and Traps in Tunneling Rate Measurements in Metal Nanocrystal Based Carbon Nanotube Memory Mrs Proceedings. 963. DOI: 10.1557/Proc-0963-Q14-03  0.749
2006 Ganguly U, Hou TH, Kan EC. Process integration of composite high-k tunneling dielectric for nanocrystal based carbon nanotube memory Materials Research Society Symposium Proceedings. 961: 183-188. DOI: 10.1557/Proc-0961-O05-12  0.713
2006 Jacquot B, Muñoz N, Kan EC. Thermal and pressure sensing by chemoreceptive neuron MOS transistors (CvMOS) with PVDF coating Materials Research Society Symposium Proceedings. 952: 41-46. DOI: 10.1557/Proc-0952-F09-08  0.754
2006 Hou TH, Lee C, Narayanan V, Ganguly U, Kan EC. Design optimization of metal nanocrystal memory - Part II: Gate-stack engineering Ieee Transactions On Electron Devices. 53: 3103-3108. DOI: 10.1109/Ted.2006.885678  0.782
2006 Hou TH, Lee C, Narayanan V, Ganguly U, Kan EC. Design optimization of metal nanocrystal memory - Part I: Nanocrystal array engineering Ieee Transactions On Electron Devices. 53: 3095-3102. DOI: 10.1109/Ted.2006.885677  0.782
2006 Hou TH, Ganguly U, Kan EC. Programable molecular orbital states of C60 from integrated circuits Applied Physics Letters. 89. DOI: 10.1063/1.2420768  0.68
2006 Ganguly U, Narayanan V, Lee C, Hou TH, Kan EC. Three-dimensional analytical modeling of nanocrystal memory electrostatics Journal of Applied Physics. 99. DOI: 10.1063/1.2202695  0.751
2006 Guo J, Kan EC, Ganguly U, Zhang Y. High sensitivity and nonlinearity of carbon nanotube charge-based sensors Journal of Applied Physics. 99. DOI: 10.1063/1.2189024  0.602
2006 Kim J, Ni W, Lee C, Kan EC, Hosein ID, Song Y, Liddell C. Magnetic property characterization of magnetite (Fe 3 O 4) nanorod cores for integrated solenoid rf inductors Journal of Applied Physics. 99. DOI: 10.1063/1.2165143  0.649
2005 Kim J, Ni W, Kan EC. Integrated on-chip planar solenoid inductors with patterned permalloy cores for high frequency applications Materials Research Society Symposium Proceedings. 833: 135-140. DOI: 10.1557/Proc-833-G3.21  0.551
2005 Ganguly U, Lee C, Kan EC. Experimental observation of non-volatile charge injection and molecular redox in fullerenes C 60 and C 70 in an EEPROM-type device Materials Research Society Symposium Proceedings. 830: 355-361. DOI: 10.1557/Proc-830-D7.5  0.711
2005 Lee C, Ganguly U, Kan EC. Characterization of number fluctuations in gate-last metal nanocrystal nonvolatile memory array beyond 90nm CMOS technology Materials Research Society Symposium Proceedings. 830: 223-228. DOI: 10.1557/Proc-830-D5.4  0.698
2005 Ganguly U, Guo J, Kan EC, Zhang Y. Carbon nanotube based non-volatile memory and charge sensors Proceedings of Spie - the International Society For Optical Engineering. 6003. DOI: 10.1117/12.637612  0.62
2005 Kim M, Shen NY-, Lee C, Kan EC. Fast and sensitive electret polymer characterization by extended floating gate MOSFET Ieee Transactions On Dielectrics and Electrical Insulation. 12: 1082-1087. DOI: 10.1109/Tdei.2005.1522200  0.66
2005 Lee C, Ganguly U, Narayanan V, Hou TH, Kim J, Kan EC. Asymmetric electric field enhancement in nanocrystal memories Ieee Electron Device Letters. 26: 879-881. DOI: 10.1109/Led.2005.859634  0.786
2005 Jacquot BC, Lee C, Shen YN, Kan EC. Time-resolved ion and molecule transport sensing with microfluidic integration by chemoreceptive neuron MOS transistors (CvMOS) Proceedings of Ieee Sensors. 2005: 101-104. DOI: 10.1109/ICSENS.2005.1597646  0.747
2005 Lee C, Hou TH, Kan EC. Metal nanocrystal/nitride heterogeneous-stack floating gate memory Device Research Conference - Conference Digest, Drc. 2005: 97-98. DOI: 10.1109/DRC.2005.1553073  0.422
2005 Ganguly U, Kan EC, Zhang Y. Carbon nanotube-based nonvolatile memory with charge storage in metal nanocrystals Applied Physics Letters. 87. DOI: 10.1063/1.1999014  0.662
2005 Liu Z, Kim M, Shen NYM, Kan EC. Actuation by electrostatic repulsion by nonvolatile charge injection Sensors and Actuators, a: Physical. 119: 236-244. DOI: 10.1016/J.Sna.2004.03.036  0.652
2005 Lee C, Meteer J, Narayanan V, Kan EC. Self-assembly of metal nanocrystals on ultrathin oxide for nonvolatile memory applications Journal of Electronic Materials. 34: 1-11. DOI: 10.1007/S11664-005-0172-8  0.781
2004 Wang P, Ni W, Tien NC, Kan EC. High-frequency permalloy permeability extracted from scattering parameters Journal of Applied Physics. 95: 7034-7036. DOI: 10.1063/1.1668612  0.542
2004 Shen NY, Liu Z, Jacquot BC, Minch BA, Kan EC. Integration of chemical sensing and electrowetting actuation on chemoreceptive neuron MOS (CνMOS) transistors Sensors and Actuators, B: Chemical. 102: 35-43. DOI: 10.1016/J.Snb.2003.10.013  0.801
2004 Narayanan V, Kan EC. A critical examination of the basis of macroscopic quantum transport approaches 2004 10th International Workshop On Computational Electronics, Ieee Iwce-10 2004, Abstracts. 233-234. DOI: 10.1007/s10825-004-7091-4  0.42
2004 Meteer JA, Eikenberry SS, Huffman JE, Kan EC. A low-temperature Si/SiGe impact diode for improved infrared sensing Device Research Conference - Conference Digest, Drc. 177-178.  0.765
2004 Narayanan V, Kan EC. A critical examination of the basis of macroscopic quantum transport approaches 2004 10th International Workshop On Computational Electronics, Ieee Iwce-10 2004, Abstracts. 233-234.  0.42
2003 Gorur-Seetharam A, Lee C, Kan EC. The effect of gate geometry on the charging characteristics of metal nanocrystal memories Materials Research Society Symposium - Proceedings. 789: 71-76. DOI: 10.1557/Proc-789-N3.28  0.623
2003 Ganguly U, Lee C, Kan EC. Integration of fullerenes and carbon nanotubes with aggressively scaled CMOS gate stacks Materials Research Society Symposium - Proceedings. 789: 403-408. DOI: 10.1557/Proc-789-N16.3  0.689
2003 Lee C, Liu Z, Kan EC. Investigation on process dependence of self-assembled metal nanocrystals Materials Research Society Symposium - Proceedings. 737: 691-696. DOI: 10.1557/Proc-737-F8.18  0.7
2003 Liu Z, Lee C, Narayanan V, Pei G, Kan EC. A novel quad source/drain metal nanocrystal memory device for multibit-per-cell storage Ieee Electron Device Letters. 24: 345-347. DOI: 10.1109/Led.2003.812528  0.7
2002 Liu Z, Lee C, Pei G, Narayanan V, Kan EC. Eluding metal contamination in CMOS front-end fabrication by nanocrystal formation process Materials Research Society Symposium - Proceedings. 707: 199-204. DOI: 10.1557/Proc-707-A5.3  0.689
2002 Liu Z, Lee C, Narayanan V, Pei G, Kan EC. Metal nanocrystal memories - Part II: Electrical characteristics Ieee Transactions On Electron Devices. 49: 1614-1622. DOI: 10.1109/Ted.2002.802618  0.74
2002 Liu Z, Lee C, Narayanan V, Pei G, Kan EC. Metal nanocrystal memories - Part I: Device design and fabrication Ieee Transactions On Electron Devices. 49: 1606-1613. DOI: 10.1109/Ted.2002.802617  0.72
2001 Pei G, Narayanan V, Liu Z, Kan EC. 3D analytical subthreshold and quantum mechanical analyses of double-gate MOSFET Technical Digest - International Electron Devices Meeting. 103-106.  0.465
2000 Liu Z, Kim M, Narayanan V, Kan EC. Process and device characteristics of self-assembled metal nano-crystal EEPROM Superlattices and Microstructures. 28: 393-399. DOI: 10.1006/Spmi.2000.0939  0.662
2000 Kan EC, Liu Z. Directed self-assembly process for nano-electronic devices and interconnect Superlattices and Microstructures. 27: 473-479. DOI: 10.1006/Spmi.2000.0851  0.571
1998 Jang J, Kan EC, Arnborg T, Johansson T, Dutton RW. Characterization of RF power BJT and improvement of thermal stability with nonlinear base ballasting Ieee Journal of Solid-State Circuits. 33: 1428-1432. DOI: 10.1109/4.711343  0.307
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