| Year |
Citation |
Score |
| 2020 |
Chakravarthi S, Moore C, Opsvig A, Pederson C, Hunt E, Ivanov A, Christen I, Dunham S, Fu KC. Window into NV center kinetics via repeated annealing and spatial tracking of thousands of individual NV centers Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.023402 |
0.353 |
|
| 2018 |
Sommer DE, Dunham ST. Atomistic models of Cu diffusion in CuInSe2 under variations in composition Journal of Applied Physics. 123: 115116. DOI: 10.1063/1.5017475 |
0.363 |
|
| 2017 |
Sommer DE, Mutter D, Dunham ST. Defects in Na-, K-, and Cd-Doped CuInSe$_2$ : Canonical Thermodynamics Based on Ab Initio Calculations Ieee Journal of Photovoltaics. 7: 1143-1152. DOI: 10.1109/Jphotov.2017.2703958 |
0.312 |
|
| 2017 |
Yazdani A, Chen R, Dunham ST. Coupled modeling of the competitive gettering of transition metals and impact on performance of lifetime sensitive devices Journal of Applied Physics. 121: 095702. DOI: 10.1063/1.4976525 |
0.593 |
|
| 2016 |
Chakraborty P, Jin Y, Barrows CJ, Dunham ST, Gamelin DR. Kinetics of Isovalent (Cd2+) and Aliovalent (In3+) Cation Exchange in Cd1-xMnxSe Nanocrystals. Journal of the American Chemical Society. PMID 27593346 DOI: 10.1021/Jacs.6B05949 |
0.339 |
|
| 2015 |
Mutter D, Dunham ST. Calculation of Defect Concentrations and Phase Stability in Cu2ZnSnS4 and Cu2ZnSnSe4 from Stoichiometry Ieee Journal of Photovoltaics. 5: 1188-1196. DOI: 10.1109/Jphotov.2015.2430015 |
0.302 |
|
| 2014 |
Dunham ST, Trzynadlowski BC. Modeling of oxygen precipitation in silicon Ecs Transactions. 64: 45-54. DOI: 10.1149/06411.0045ecst |
0.772 |
|
| 2014 |
Dunham ST, Lai H, Chen R. Atomistic modeling of strained SiGe nanofins Ecs Transactions. 64: 557-572. DOI: 10.1149/06406.0557ecst |
0.48 |
|
| 2014 |
Chen R, Trzynadlowski B, Dunham ST. Phosphorus vacancy cluster model for phosphorus diffusion gettering of metals in Si Journal of Applied Physics. 115. DOI: 10.1063/1.4864377 |
0.76 |
|
| 2013 |
Liu Y, Dunham S, Baehr-Jones T, Lim AEJ, Lo GQ, Hochberg M. Ultra-responsive phase shifters for depletion mode silicon modulators Journal of Lightwave Technology. 31: 3787-3793. DOI: 10.1109/Jlt.2013.2287697 |
0.32 |
|
| 2013 |
Trzynadlowski BC, Dunham ST. A reduced moment-based model for oxygen precipitation in silicon Journal of Applied Physics. 114. DOI: 10.1063/1.4849435 |
0.777 |
|
| 2013 |
Jiang W, Salvador M, Dunham ST. Combined three-dimensional electromagnetic and device modeling of surface plasmon-enhanced organic solar cells incorporating low aspect ratio silver nanoprisms Applied Physics Letters. 103. DOI: 10.1063/1.4827106 |
0.303 |
|
| 2013 |
Vasko SE, Jiang W, Lai H, Sadilek M, Dunham S, Rolandi M. High-field chemistry of organometallic precursors for direct-write of germanium and silicon nanostructures Journal of Materials Chemistry C. 1: 282-289. DOI: 10.1039/C2Tc00393G |
0.309 |
|
| 2012 |
Wagner H, Steingrube S, Wolpensinger B, Dastgheib-Shirazi A, Chen R, Dunham ST, Altermatt PP. Analyzing emitter dopant inhomogeneities at textured Si surfaces by using 3D process and device simulations in combination with SEM imaging Conference Record of the Ieee Photovoltaic Specialists Conference. 313-316. DOI: 10.1109/PVSC.2012.6317625 |
0.524 |
|
| 2012 |
Chen R, Wagner H, Dastgheib-Shirazi A, Kessler M, Zhu Z, Altermatt PP, Dunham ST. Understanding coupled oxide growth and phosphorus diffusion in POCl 3 deposition for control of phosphorus emitter diffusion Conference Record of the Ieee Photovoltaic Specialists Conference. 213-216. DOI: 10.1109/PVSC.2012.6317603 |
0.52 |
|
| 2012 |
Chen R, Wagner H, Dastgheib-Shirazi A, Kessler M, Zhu Z, Shutthanandan V, Altermatt PP, Dunham ST. A model for phosphosilicate glass deposition via POCl3 for control of phosphorus dose in Si Journal of Applied Physics. 112. DOI: 10.1063/1.4771672 |
0.598 |
|
| 2012 |
Lovejoy TC, Chen R, Yitamben EN, Shutthanadan V, Heald SM, Villora EG, Shimamura K, Zheng S, Dunham ST, Ohuchi FS, Olmstead MA. Incorporation, valence state, and electronic structure of Mn and Cr in bulk single crystal β-Ga 2O 3 Journal of Applied Physics. 111. DOI: 10.1063/1.4729289 |
0.526 |
|
| 2012 |
Lai H, Cea SM, Kennel H, Dunham ST. Molecular dynamics modeling of solid phase epitaxial regrowth Journal of Applied Physics. 111. DOI: 10.1063/1.4721407 |
0.401 |
|
| 2012 |
Lovejoy TC, Chen R, Zheng X, Villora EG, Shimamura K, Yoshikawa H, Yamashita Y, Ueda S, Kobayashi K, Dunham ST, Ohuchi FS, Olmstead MA. Band bending and surface defects in β-Ga 2O 3 Applied Physics Letters. 100. DOI: 10.1063/1.4711014 |
0.507 |
|
| 2011 |
Vasko SE, Jiang W, Chen R, Hanlen R, Torrey JD, Dunham ST, Rolandi M. Insights into scanning probe high-field chemistry of diphenylgermane. Physical Chemistry Chemical Physics : Pccp. 13: 4842-5. PMID 21293792 DOI: 10.1039/C0Cp02150D |
0.53 |
|
| 2011 |
Trzynadlowski BC, Jiang W, Chen R, Dunham ST. End-to-end predictive modeling of silicon solar cell performance: From process recipe to device simulation Conference Record of the Ieee Photovoltaic Specialists Conference. 002952-002956. DOI: 10.1109/PVSC.2011.6186565 |
0.775 |
|
| 2011 |
Chen R, Dunham ST. Correlation factors for interstitial-mediated self-diffusion in the diamond lattice: Kinetic lattice Monte Carlo approach Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.134124 |
0.586 |
|
| 2011 |
Steingrube S, Wagner H, Hannebauer H, Gatz S, Chen R, Dunham ST, Dullweber T, Altermatt PP, Brendel R. Loss analysis and improvements of industrially fabricated Cz-Si solar cells by means of process and device simulations Energy Procedia. 8: 263-268. DOI: 10.1016/J.Egypro.2011.06.134 |
0.595 |
|
| 2011 |
Ohrdes T, Steingrube S, Wagner H, Zechner C, Letay G, Chen R, Dunham ST, Altermatt PP. Solar cell emitter design with PV-tailored implantation Energy Procedia. 8: 167-173. DOI: 10.1016/J.Egypro.2011.06.119 |
0.593 |
|
| 2010 |
Chen R, Dunham ST. Ab initio calculations of crystalline and amorphous In2Se 3 compounds for chalcogenide phase change memory Materials Research Society Symposium Proceedings. 1251: 43-48. DOI: 10.1557/Proc-1251-H03-34 |
0.5 |
|
| 2010 |
Chen R, Dunham ST. Kinetic lattice Monte Carlo simulations of interdiffusion in strained silicon germanium alloys Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 28: C1G18-C1G23. DOI: 10.1116/1.3294704 |
0.598 |
|
| 2009 |
Trzynadlowski BC, Volz S, Dunham ST, Altintas E, Fujita H, Böhringer KF. Simulation and optimization of transport in a linear Brownian motor Transducers 2009 - 15th International Conference On Solid-State Sensors, Actuators and Microsystems. 1285-1288. DOI: 10.1109/SENSOR.2009.5285865 |
0.739 |
|
| 2009 |
Ahn C, Bennett N, Dunham ST, Cowern NEB. Stress effects on impurity solubility in crystalline materials: A general model and density-functional calculations for dopants in silicon Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.073201 |
0.358 |
|
| 2008 |
Trzynadlowski B, Dunham S, Ahn C. Atomistic Modeling of {311} Defects and Dislocation Ribbons Mrs Proceedings. 1070. DOI: 10.1557/Proc-1070-E06-04 |
0.774 |
|
| 2008 |
Yoon JC, Dunham S. Atomistic Simulations of Epitaxial Regrowth of As-doped Silicon Mrs Proceedings. 1070. DOI: 10.1557/Proc-1070-E03-09 |
0.411 |
|
| 2008 |
Guo HW, Ahn C, Dunham ST. Modeling of effect of stress on C diffusion/clustering in Si Materials Research Society Symposium Proceedings. 1070: 129-134. DOI: 10.1557/Proc-1070-E03-07 |
0.351 |
|
| 2008 |
Ahn C, Dunham ST. Calculation of dopant segregation ratios at semiconductor interfaces Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.195303 |
0.322 |
|
| 2008 |
Kleven K, Dunham ST. A comparison of optical modulator structures using a matrix simulation approach Optical and Quantum Electronics. 40: 431-437. DOI: 10.1007/S11082-008-9223-8 |
0.71 |
|
| 2007 |
Guo HW, Dunham ST. Modeling of Cu surface precipitation and out-diffusion from silicon wafers Materials Research Society Symposium Proceedings. 994: 239-244. DOI: 10.1557/Proc-0994-F09-01 |
0.366 |
|
| 2006 |
Ahn C, Song J, Dunham ST. Predictive model for B diffusion in strained SiGe based on atomistic calculations Materials Research Society Symposium Proceedings. 913: 179-183. DOI: 10.1557/Proc-0913-D05-07 |
0.431 |
|
| 2006 |
Guo H, Shih C, Ketterl J, Dunham S. Low Temperature Poly-Si Sputtering Deposition Through Metal-induced Crystallization and its Application Mrs Proceedings. 910. DOI: 10.1557/Proc-0910-A21-05 |
0.324 |
|
| 2006 |
McLauchlan KK, Dunham ST. A compact hybrid silicon/electro-optic polymer resonant cavity modulator design Proceedings of Spie - the International Society For Optical Engineering. 6322. DOI: 10.1117/12.679128 |
0.354 |
|
| 2006 |
Ahn C, Diebel M, Dunham ST. First principles calculations of dopant solubility based on strain compensation and direct binding between dopants and group IV impurities Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 700-704. DOI: 10.1116/1.2179458 |
0.667 |
|
| 2006 |
Dunham ST, Diebel M, Ahn C, Shih CL. Calculations of effect of anisotropic stress/strain on dopant diffusion in silicon under equilibrium and nonequilibrium conditions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 456-461. DOI: 10.1116/1.2151908 |
0.691 |
|
| 2006 |
McLauchlan KK, Dunham ST. Analysis of a compact modulator incorporating a hybrid silicon/electro- optic polymer waveguide Ieee Journal On Selected Topics in Quantum Electronics. 12: 1455-1460. DOI: 10.1109/Jstqe.2006.884090 |
0.358 |
|
| 2006 |
Diebel M, Dunham ST. Diebel and Dunham Reply: Physical Review Letters. 96. DOI: 10.1103/Physrevlett.96.039602 |
0.601 |
|
| 2006 |
Fiorentini V, Lopez GM, Diebel M, Dunham ST. Comment on Ab initio calculations to model anomalous fluorine behavior Physical Review Letters. 96. DOI: 10.1103/PhysRevLett.96.039601 |
0.628 |
|
| 2005 |
Kohli P, Jain A, Chakravarthi S, Bu H, Dunham ST, Banerjee S. Interactions of B dopant atoms and Si interstitials with SiO2 films during annealing for ultra-shallow junction formation Journal of Applied Physics. 97. DOI: 10.1063/1.1884246 |
0.373 |
|
| 2004 |
Diebel M, Dunham ST. Ab initio calculations to model anomalous fluorine behavior. Physical Review Letters. 93: 245901. PMID 15697827 DOI: 10.1103/Physrevlett.93.245901 |
0.712 |
|
| 2004 |
Kohli P, Jain A, Bu H, Chakravarthi S, Machala C, Dunham ST, Banerjee SK. Effect of nitride sidewall spacer process on boron dose loss in ultrashallow junction formation Journal of Vacuum Science & Technology B. 22: 471-476. DOI: 10.1116/1.1642645 |
0.365 |
|
| 2004 |
Guo HW, Dunham ST. Accurate modeling of copper precipitation kinetics including fermi level dependence Proceedings - Electrochemical Society. 5: 165-175. DOI: 10.1063/1.2374689 |
0.404 |
|
| 2004 |
Kohli P, Chakravarthi S, Jain A, Bu H, Mehrotra M, Dunham ST, Banerjee SK. Fundamental characterization of the effect of nitride sidewall spacer process on boron dose loss in ultra-shallow junction formation Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 114: 390-396. DOI: 10.1016/J.Mseb.2004.07.080 |
0.368 |
|
| 2003 |
Diebel M, Chakravarthi S, Dunham ST, Machala CF, Ekbote S, Jain A. Investigation and modeling of fluorine co-implantation effects on dopant redistribution Materials Research Society Symposium - Proceedings. 765: 211-216. DOI: 10.1557/Proc-765-D6.15 |
0.677 |
|
| 2003 |
Qin Z, Dunham ST. Atomistic simulations of the effect of Coulombic interactions on carrier fluctuations in doped silicon Physical Review B - Condensed Matter and Materials Physics. 68: 2452011-2452015. DOI: 10.1557/Proc-765-D5.7 |
0.378 |
|
| 2003 |
Diebel M, Dunham ST. Ab-initio calculations to predict stress effects on defects and diffusion in silicon International Conference On Simulation of Semiconductor Processes and Devices, Sispad. 2003: 147-150. DOI: 10.1109/SISPAD.2003.1233658 |
0.687 |
|
| 2003 |
Chakravarthi S, Diebel M, Chidambaram PR, Ekbote S, Dunham ST, Machala CF, Johnson S. Process modeling based on atomistic understanding for state of the art CMOS device design 2003 Nanotechnology Conference and Trade Show - Nanotech 2003. 2: 121-124. |
0.688 |
|
| 2002 |
Meyer H, Dunham ST. Modeling of TED Point Defect Paramater Extraction Mrs Proceedings. 717. DOI: 10.1557/Proc-717-C4.8 |
0.361 |
|
| 2002 |
Diebel M, Dunham ST. Ab-initio calculations to model anomalous fluorine behavior Materials Research Society Symposium - Proceedings. 717: 169-174. DOI: 10.1557/Proc-717-C4.5 |
0.724 |
|
| 2002 |
Qin Z, Dunham ST. Modeling fermi level effects in atomistic simulations Materials Research Society Symposium - Proceedings. 717: 135-140. DOI: 10.1557/Proc-717-C3.8 |
0.38 |
|
| 2002 |
Gencer AH, Dunham ST. A combined model for 311 defect and dislocation loop evolution: Analytical formulation of kinetic precipitation model Journal of Applied Physics. 91: 2883-2889. DOI: 10.1063/1.1446223 |
0.413 |
|
| 2002 |
Uberuaga BP, Henkelman G, Jónsson H, Dunham ST, Windl W, Stumpf R. Theoretical studies of self-diffusion and dopant clustering in semiconductors Physica Status Solidi (B) Basic Research. 233: 24-30. DOI: 10.1002/1521-3951(200209)233:1<24::Aid-Pssb24>3.0.Co;2-5 |
0.328 |
|
| 2001 |
Fastenko P, Dunham ST, Henkelman G. Modeling of Annealing of High Concentration Arsenic Profiles Mrs Proceedings. 669. DOI: 10.1557/Proc-669-J5.10 |
0.449 |
|
| 2001 |
Chakravarthi S, Dunham ST. Modeling of vacancy cluster formation in ion implanted silicon Journal of Applied Physics. 89: 4758-4765. DOI: 10.1063/1.1352680 |
0.403 |
|
| 2001 |
Chakravarthi S, Dunham ST. A simple continuum model for boron clustering based on atomistic calculations Journal of Applied Physics. 89: 3650-3655. DOI: 10.1063/1.1352576 |
0.402 |
|
| 2001 |
Fastenko P, Dunham ST, Henkelmau G. Modeling of annealing of high concentration arsenic profiles Materials Research Society Symposium - Proceedings. 669. |
0.785 |
|
| 2001 |
Dunham ST, Fastenko P, Qin Z, Henkelman G. Atomistic modeling of arsenic diffusion and activation 2001 International Conference On Computational Nanoscience - Iccn 2001. 100-103. |
0.787 |
|
| 2000 |
Chakravarthi S, Gencer AH, Dunham ST, Downey DF. Understanding and modeling ramp rate effects on shallow junction formation Materials Research Society Symposium - Proceedings. 610. DOI: 10.1557/Proc-610-B4.8 |
0.402 |
|
| 2000 |
Bunea MM, Dunham ST. Monte Carlo study of vacancy-mediated impurity diffusion in silicon Physical Review B - Condensed Matter and Materials Physics. 61. DOI: 10.1103/Physrevb.61.R2397 |
0.443 |
|
| 1999 |
Bunea GE, Dunham ST, Moustakas TD. Modeling of a GaN based static induction transistor Mrs Internet Journal of Nitride Semiconductor Research. 4. DOI: 10.1557/S1092578300003276 |
0.339 |
|
| 1999 |
Windl W, Bunea MM, Stumpf R, Dunham ST, Masquelier MP. Ab-Initio Pseudopotential Calculations of Boron Diffusion in Silicon Mrs Proceedings. 568. DOI: 10.1557/Proc-568-91 |
0.413 |
|
| 1999 |
Bunea MM, Fastenko P, Dunham ST. Atomistic simulations of damage evolution in silicon Materials Research Society Symposium - Proceedings. 568: 135-140. DOI: 10.1557/Proc-568-135 |
0.76 |
|
| 1999 |
Windl W, Bunea MM, Stumpf R, Dunham ST, Masquelier MP. First-Principles Study of Boron Diffusion in Silicon Physical Review Letters. 83: 4345-4348. DOI: 10.1103/Physrevlett.83.4345 |
0.406 |
|
| 1999 |
Smith AL, Dunham ST, Kimerling LC. Transition metal defect behavior and Si density of states in the processing temperature regime Physica B: Condensed Matter. 273: 358-362. DOI: 10.1016/S0921-4526(99)00476-7 |
0.325 |
|
| 1999 |
Dunham ST, Gencer AH, Chakravarthi S. Modeling of dopant diffusion in silicon Ieice Transactions On Electronics. 800-811. |
0.336 |
|
| 1998 |
Horsfield A, Dunham S, Fujitani H. Self-Consistent Kinetic Lattice Monte Carlo Mrs Proceedings. 538. DOI: 10.1557/Proc-538-285 |
0.404 |
|
| 1998 |
Gencer AH, Dunham ST. Moment-based Modeling of Extended Defects for Simulation of TED: What Level of Complexity is Necessary? Mrs Proceedings. 532. DOI: 10.1557/Proc-532-105 |
0.395 |
|
| 1998 |
Navi M, Dunham ST. Effect of film density on boron diffusion in SiO2 Applied Physics Letters. 72: 2111-2113. DOI: 10.1063/1.121292 |
0.331 |
|
| 1998 |
Bunea MM, Dunham ST. Lattice Monte Carlo simulations as link between ab-initio calculations and macroscopic behavior of dopants and defects in silicon Journal of Computer-Aided Materials Design. 5: 81-88. DOI: 10.1023/A:1008689130758 |
0.45 |
|
| 1997 |
Buneat MM, Dunham ST. 3D Atomistic Simulations of Submicron Device Fabrication Mrs Proceedings. 490. DOI: 10.1557/Proc-490-3 |
0.449 |
|
| 1997 |
Chakravarthit S, Dunham ST. Point Defect Properties from Metal Diffusion Experiments — What Does the Data Really Tell Us? Mrs Proceedings. 469. DOI: 10.1557/Proc-469-47 |
0.396 |
|
| 1997 |
Gencer AH, Chakravarthi S, Clejan I, Dunham ST. Fundamental modeling of transient enhanced diffusion through extended defect evolution Materials Research Society Symposium - Proceedings. 469: 359-364. DOI: 10.1557/Proc-469-359 |
0.399 |
|
| 1997 |
Bunea MM, Dunham ST. Lattice Monte Carlo Simulations of Vacancy-Mediated Diffusion and Aggregation using Ab-Initio Parameters Mrs Proceedings. 469. DOI: 10.1557/Proc-469-353 |
0.444 |
|
| 1997 |
Navi M, Dunham ST. A viscous compressible model for stress generation/relaxation in SiO2 Journal of the Electrochemical Society. 144: 367-371. DOI: 10.1149/1.1837411 |
0.329 |
|
| 1997 |
Dunham ST. Erratum: “Reply to “A Comment on ‘Atomistic models of vacancy-mediated diffusion in silicon’ ’’ ’’ [J. Appl. Phys.79, 7409 (1996)] Journal of Applied Physics. 81: 2044-2044. DOI: 10.1063/1.365557 |
0.39 |
|
| 1997 |
Gencer AH, Dunham ST. A predictive model for transient enhanced diffusion based on evolution of {311} defects Journal of Applied Physics. 81: 631-636. DOI: 10.1063/1.364204 |
0.394 |
|
| 1997 |
Dunham ST, Clejan I, Gencer AH. Accurate and efficient modeling of nucleation and growth processes Materials Science and Engineering A. 238: 152-159. DOI: 10.1016/S0921-5093(97)00444-9 |
0.388 |
|
| 1996 |
Gencer AH, Dunham ST. Modeling of Dislocation Loop Growth and Transient Enhanced Diffusion in Silicon for Amorphizing Implants Mrs Proceedings. 439. DOI: 10.1557/Proc-439-35 |
0.418 |
|
| 1996 |
Sonoda KI, Dunham ST, Yamaji M, Taniguchi K, Hamaguchi C. Impact ionization model using average energy and average square energy of distribution function Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 35: 818-825. DOI: 10.1143/Jjap.35.818 |
0.305 |
|
| 1996 |
Sonoda KI, Yamaji M, Taniguchi K, Hamaguchi C, Dunham ST. Moment expansion approach to calculate impact ionization rate in submicron silicon devices Journal of Applied Physics. 80: 5444-5448. DOI: 10.1063/1.362732 |
0.351 |
|
| 1996 |
Dunham ST. Reply to ‘‘Comment on ‘Atomistic models of vacancy‐mediated diffusion in silicon’ ’’ [J. Appl. Phys. 78, 2362 (1995)] Journal of Applied Physics. 79: 7409-7410. DOI: 10.1063/1.362681 |
0.39 |
|
| 1995 |
Michel J, Palm J, Gan F, Ren FYG, Zheng B, Dunham ST, Kimerling LC. Erbium in silicon: a defect system for optoelectronic integrated circuits Materials Science Forum. 196: 585-590. DOI: 10.4028/Www.Scientific.Net/Msf.196-201.585 |
0.355 |
|
| 1995 |
Dunham ST. Modeling of the Kinetics of Dopant Precipitation in Silicon Journal of the Electrochemical Society. 142: 2823-2828. DOI: 10.1149/1.2050098 |
0.405 |
|
| 1995 |
Clejan I, Dunham ST. A reduced moment-based model for precipitation kinetics and application to dopant activation in silicon Journal of Applied Physics. 78: 7327-7333. DOI: 10.1063/1.360381 |
0.381 |
|
| 1995 |
Dunham ST, Wu CD. Atomistic models of vacancy-mediated diffusion in silicon Journal of Applied Physics. 78: 2362-2366. DOI: 10.1063/1.360156 |
0.465 |
|
| 1995 |
Agarwal AM, Dunham ST. Consistent quantitative model for the spatial extent of point defect interactions in silicon Journal of Applied Physics. 78: 5313-5319. DOI: 10.1063/1.359708 |
0.402 |
|
| 1995 |
Wittel F, Dunham S. Diffusion of phosphorus in arsenic and boron doped silicon Applied Physics Letters. 66: 1415-1417. DOI: 10.1063/1.113219 |
0.398 |
|
| 1994 |
Dunham ST. Improved analysis of spreading resistance measurements Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 12: 283. DOI: 10.1116/1.587155 |
0.307 |
|
| 1993 |
Dunham S. Modeling of Dopant Diffusion during Annealing of Sub-Amorphizing Implants Mrs Proceedings. 316. DOI: 10.1557/Proc-316-197 |
0.39 |
|
| 1993 |
Levin Y, Herbots N, Dunham S. Damage-to-dose ratio after low energy silicon ion implantation into crystalline silicon Journal of Materials Research. 8: 2305-2309. DOI: 10.1557/Jmr.1993.2305 |
0.422 |
|
| 1993 |
Agarwal AM, Dunham ST. Defect Formation During Annealing of Thin Oxides on Silicon Journal of the Electrochemical Society. 140: 222-226. DOI: 10.1149/1.2056092 |
0.326 |
|
| 1993 |
Dunham ST. Growth kinetics of disk-shaped extended defects with constant thickness Applied Physics Letters. 63: 464-466. DOI: 10.1063/1.110025 |
0.309 |
|
| 1993 |
Agarwal AM, Dunham ST. Determination of silicon point defect properties from oxidation enhanced diffusion of buried layers Applied Physics Letters. 63: 800-802. DOI: 10.1063/1.109912 |
0.456 |
|
| 1992 |
Dunham ST. A Quantitative Model for the Coupled Diffusion of Phosphorus and Point Defects in Silicon Journal of the Electrochemical Society. 139: 2628-2636. DOI: 10.1149/1.2221276 |
0.436 |
|
| 1992 |
Dunham ST. Errata: “A Quantitative Model for the Coupled Diffusion of Phosphorus and Points Defects in Silicon” [J. Electrochem. Soc., 139, 2628 (1992)] Journal of the Electrochemical Society. 139: 3544. DOI: 10.1149/1.2152190 |
0.363 |
|
| 1992 |
Jeng N, Dunham ST. Interstitial supersaturation during oxidation of silicon in steam ambients Journal of Applied Physics. 72: 2049-2053. DOI: 10.1063/1.351633 |
0.302 |
|
| 1992 |
Dunham ST. Interactions of silicon point defects with SiO2 films Journal of Applied Physics. 71: 685-696. DOI: 10.1063/1.351328 |
0.401 |
|
| 1991 |
Dunham ST, Jeng N. Dopant diffusion during high-temperature oxidation of silicon Applied Physics Letters. 59: 2016-2018. DOI: 10.1063/1.106118 |
0.376 |
|
| 1989 |
Dunham ST, Agarwal AM, Jeng N. Measurements of Enhanced Diffusion of Buried Layers in Silicon Membrane Structures During Oxidation Mrs Proceedings. 163. DOI: 10.1557/Proc-163-543 |
0.387 |
|
| 1989 |
Dunham ST. Interstitial Kinetics Near Oxidizing Silicon Interfaces Journal of the Electrochemical Society. 136: 250-254. DOI: 10.1149/1.2096596 |
0.393 |
|
| 1987 |
Dunham ST. Analysis of the effect of thermal nitridation of silicon dioxide on silicon interstitial concentration Journal of Applied Physics. 62: 1195-1201. DOI: 10.1063/1.339669 |
0.399 |
|
| 1986 |
Dunham ST, Plummer JD. Point-defect generation during oxidation of silicon in dry oxygen. II. Comparison to experiment Journal of Applied Physics. 59: 2551-2561. DOI: 10.1063/1.337004 |
0.322 |
|
| 1986 |
Dunham ST, Plummer JD. Point-defect generation during oxidation of silicon in dry oxygen. I. Theory Journal of Applied Physics. 59: 2541-2550. DOI: 10.1063/1.337003 |
0.311 |
|
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