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Sarah M. Eichfeld, Ph.D. - Publications

Affiliations: 
2009 Pennsylvania State University, State College, PA, United States 
Area:
Materials Science Engineering
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34 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Nie Y, Barton AT, Addou R, Zheng Y, Walsh LA, Eichfeld SM, Yue R, Cormier CR, Zhang C, Wang Q, Liang C, Robinson JA, Kim M, Vandenberghe W, Colombo L, et al. Dislocation driven spiral and non-spiral growth in layered chalcogenides. Nanoscale. PMID 30052245 DOI: 10.1039/C8Nr02280A  0.417
2018 Lin YC, Jariwala B, Bersch BM, Xu K, Nie Y, Wang B, Eichfeld SM, Zhang X, Choudhury TH, Pan Y, Addou R, Smyth CM, Li J, Zhang K, Haque MA, et al. Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors. Acs Nano. PMID 29360349 DOI: 10.1021/Acsnano.7B07059  0.667
2017 Walker RC, Bhimanapati GR, Shi T, Zhang K, Eichfeld SM, Jovanovic I, Robinson JA. Stability of semiconducting transition metal dichalcogenides irradiated by soft X-rays and low energy electrons Applied Physics Letters. 110: 173102. DOI: 10.1063/1.4982626  0.378
2016 Al Balushi ZY, Wang K, Ghosh RK, Vilá RA, Eichfeld SM, Caldwell JD, Qin X, Lin YC, DeSario PA, Stone G, Subramanian S, Paul DF, Wallace RM, Datta S, Redwing JM, et al. Two-dimensional gallium nitride realized via graphene encapsulation. Nature Materials. PMID 27571451 DOI: 10.1038/Nmat4742  0.685
2016 Lin YC, Li J, de la Barrera SC, Eichfeld SM, Nie Y, Addou R, Mende PC, Wallace RM, Cho K, Feenstra RM, Robinson JA. Tuning electronic transport in epitaxial graphene-based van der Waals heterostructures. Nanoscale. PMID 27073972 DOI: 10.1039/C6Nr01902A  0.385
2016 Park JH, Vishwanath S, Liu X, Zhou H, Eichfeld SM, Fullerton-Shirey SK, Robinson JA, Feenstra RM, Furdyna J, Jena D, Xing HG, Kummel AC. Scanning Tunneling Microscopy and Spectroscopy of Air Exposure Effects on Molecular Beam Epitaxy Grown WSe2 Monolayers and Bilayers. Acs Nano. PMID 26991824 DOI: 10.1021/Acsnano.5B07698  0.334
2016 Ke Y, Hainey M, Won D, Weng X, Eichfeld SM, Redwing JM. Carrier gas effects on aluminum-catalyzed nanowire growth. Nanotechnology. 27: 135605. PMID 26900836 DOI: 10.1088/0957-4484/27/13/135605  0.566
2016 Ruzmetov D, Zhang K, Stan G, Kalanyan B, Bhimanapati GR, Eichfeld SM, Burke RA, Shah PB, O'Regan TP, Crowne FJ, Birdwell AG, Robinson JA, Davydov AV, Ivanov TG. Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride. Acs Nano. PMID 26866442 DOI: 10.1021/Acsnano.5B08008  0.464
2016 Eichfeld SM, Colon VO, Nie Y, Cho K, Robinson JA. Controlling nucleation of monolayer WSe2 during metal-organic chemical vapor deposition growth 2d Materials. 3. DOI: 10.1088/2053-1583/3/2/025015  0.385
2016 Zhang X, Al Balushi ZY, Zhang F, Choudhury TH, Eichfeld SM, Alem N, Jackson TN, Robinson JA, Redwing JM. Influence of Carbon in Metalorganic Chemical Vapor Deposition of Few-Layer WSe2 Thin Films Journal of Electronic Materials. 1-7. DOI: 10.1007/S11664-016-5033-0  0.663
2015 Lin YC, Ghosh RK, Addou R, Lu N, Eichfeld SM, Zhu H, Li MY, Peng X, Kim MJ, Li LJ, Wallace RM, Datta S, Robinson JA. Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures. Nature Communications. 6: 7311. PMID 26088295 DOI: 10.1038/Ncomms8311  0.379
2015 Azizi A, Eichfeld S, Geschwind G, Zhang K, Jiang B, Mukherjee D, Hossain L, Piasecki AF, Kabius B, Robinson JA, Alem N. Freestanding van der waals heterostructures of graphene and transition metal dichalcogenides. Acs Nano. 9: 4882-90. PMID 25885122 DOI: 10.1021/Acsnano.5B01677  0.431
2015 Eichfeld SM, Hossain L, Lin YC, Piasecki AF, Kupp B, Birdwell AG, Burke RA, Lu N, Peng X, Li J, Azcatl A, McDonnell S, Wallace RM, Kim MJ, Mayer TS, et al. Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition. Acs Nano. 9: 2080-7. PMID 25625184 DOI: 10.1021/Nn5073286  0.616
2015 Zhang K, Eichfeld S, Leach J, Metzger B, Lin YC, Evansb K, Robinson JA. Synthesis of two dimensional materials for beyond graphene devices Proceedings of Spie - the International Society For Optical Engineering. 9467. DOI: 10.1117/12.2177985  0.397
2015 Robinson JA, Eichfeld S, Lin Y, Lu N, Kim M. Growth Morphology and Defects in 2D Heterostructures and Interfaces Microscopy and Microanalysis. 21: 101-102. DOI: 10.1017/S1431927615001300  0.388
2014 Eichfeld SM, Eichfeld CM, Lin Y, Hossain L, Robinson JA. Rapid, non-destructive evaluation of ultrathin WSe2 using spectroscopic ellipsometry Apl Materials. 2: 092508. DOI: 10.1063/1.4893961  0.368
2014 Hainey M, Eichfeld SM, Shen H, Yim J, Black MR, Redwing JM. Aluminum-Catalyzed Growth of ‹110› Silicon Nanowires Journal of Electronic Materials. DOI: 10.1007/S11664-014-3565-8  0.713
2013 Eichfeld SM, Hainey MF, Shen H, Kendrick CE, Fucinato EA, Yim J, Black MR, Redwing JM. Vapor-liquid-solid growth of 〈110〉 silicon nanowire arrays Proceedings of Spie - the International Society For Optical Engineering. 8820. DOI: 10.1117/12.2026825  0.719
2012 Redwing JM, Manning IC, Weng X, Eichfeld SM, Acord JD, Fanton MA, Snyder DW. Effects of silicon doping and threading dislocation density on stress evolution in AlGaN films Materials Research Society Symposium Proceedings. 1396: 183-191. DOI: 10.1557/Opl.2012.215  0.671
2011 Ke Y, Wang X, Weng XJ, Kendrick CE, Yu YA, Eichfeld SM, Yoon HP, Redwing JM, Mayer TS, Habib YM. Single wire radial junction photovoltaic devices fabricated using aluminum catalyzed silicon nanowires. Nanotechnology. 22: 445401. PMID 21983364 DOI: 10.1088/0957-4484/22/44/445401  0.628
2011 Eichfeld SM, Shen H, Eichfeld CM, Mohney SE, Dickey EC, Redwing JM. Gas phase equilibrium limitations on the vapor-liquid-solid growth of epitaxial silicon nanowires using SiCl4 Journal of Materials Research. 26: 2207-2214. DOI: 10.1557/Jmr.2011.144  0.692
2011 Eichfeld SM, Won D, Trumbull K, Labella M, Weng X, Robinson J, Snyder D, Redwing JM, Paskova T, Udwary K, Mulholland G, Preble E, Evans KR. Dual temperature process for reduction in regrowth interfacial charge in AlGaN/GaN HEMTs grown on GaN substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2053-2055. DOI: 10.1002/Pssc.201001059  0.61
2010 Kendrick CE, Eichfeld SM, Ke Y, Weng X, Wang X, Mayer TS, Redwing JM. Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells Proceedings of Spie - the International Society For Optical Engineering. 7768. DOI: 10.1117/12.861571  0.641
2010 Hu W, Liu B, Dellas NS, Eichfeld SM, Mohney SE, Redwing JM, Mayer TS. Lithography-free synthesis of freestanding gold nanoparticle arrays encapsulated within dielectric nanowires Proceedings of Spie - the International Society For Optical Engineering. 7610. DOI: 10.1117/12.846766  0.414
2009 Hu W, Zhong X, Morrow T, Keating CD, Eichfeld S, Redwing JM, Mayer TS. Axially-doped silicon nanowire field effect transistors for real-time sensing in physiologically relevant buffer solutions Device Research Conference - Conference Digest, Drc. 131-132. DOI: 10.1109/DRC.2009.5354875  0.55
2009 Dellas NS, Liu BZ, Eichfeld SM, Eichfeld CM, Mayer TS, Mohney SE. Orientation dependence of nickel silicide formation in contacts to silicon nanowires Journal of Applied Physics. 105. DOI: 10.1063/1.3115453  0.435
2008 Ho TT, Wang Y, Eichfeld S, Lew KK, Liu B, Mohney SE, Redwing JM, Mayer TS. In situ axially doped n-channel silicon nanowire field-effect transistors. Nano Letters. 8: 4359-64. PMID 19367848 DOI: 10.1021/Nl8022059  0.698
2008 Highstrete C, Lee M, Vallett AL, Eichfeld SM, Redwing JM, Mayer TS. Disorder dominated microwave conductance spectra of doped silicon nanowire arrays. Nano Letters. 8: 1557-61. PMID 18444685 DOI: 10.1021/Nl072496P  0.558
2008 Woodruff SM, Dellas NS, Liu BZ, Eichfeld SM, Mayer TS, Redwing JM, Mohney SE. Nickel and nickel silicide Schottky barrier contacts to n -type silicon nanowires Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1592-1596. DOI: 10.1116/1.2939256  0.596
2008 Liu B, Wang Y, Ho TT, Lew KK, Eichfeld SM, Redwing JM, Mayer TS, Mohney SE. Oxidation of silicon nanowires for top-gated field effect transistors Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 26: 370-374. DOI: 10.1116/1.2899333  0.684
2007 Goodey AP, Eichfeld SM, Lew KK, Redwing JM, Mallouk TE. Silicon nanowire array photelectrochemical cells. Journal of the American Chemical Society. 129: 12344-5. PMID 17892289 DOI: 10.1021/Ja073125D  0.701
2007 Eichfeld CM, Wood C, Liu B, Eichfeld SM, Redwing JM, Mohney SE. Selective plating for junction delineation in silicon nanowires. Nano Letters. 7: 2642-4. PMID 17696558 DOI: 10.1021/Nl0710248  0.562
2007 Ho TT, Wang Y, Liu B, Eichfeld S, Lew KK, Mohney S, Redwing J, Mayer T. Top-gated field effect transistors fabricated using thermally-oxidized silicon nanowires synthesized by vapor-liquid solid growth 2007 International Semiconductor Device Research Symposium, Isdrs. DOI: 10.1109/ISDRS.2007.4422515  0.595
2007 Eichfeld SM, Ho TT, Eichfeld CM, Cranmer A, Mohney SE, Mayer TS, Redwing JM. Resistivity measurements of intentionally and unintentionally template-grown doped silicon nanowire arrays Nanotechnology. 18. DOI: 10.1088/0957-4484/18/31/315201  0.588
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