| Year |
Citation |
Score |
| 2020 |
Armijo LM, Wawrzyniec SJ, Kopciuch M, Brandt YI, Rivera AC, Withers NJ, Cook NC, Huber DL, Monson TC, Smyth HDC, Osiński M. Antibacterial activity of iron oxide, iron nitride, and tobramycin conjugated nanoparticles against Pseudomonas aeruginosa biofilms. Journal of Nanobiotechnology. 18: 35. PMID 32070354 DOI: 10.1186/S12951-020-0588-6 |
0.617 |
|
| 2017 |
Smolyakov GA, Osiński M. Large-signal analysis of directly modulated strongly-injection-locked whistle-geometry ring lasers Proceedings of Spie. 10098. DOI: 10.1117/12.2256076 |
0.318 |
|
| 2016 |
Wang C, Schires K, Osiński M, Poole PJ, Grillot F. Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking. Scientific Reports. 6: 27825. PMID 27302301 DOI: 10.1038/Srep27825 |
0.392 |
|
| 2016 |
Leggio L, Gallego DC, Gawali SB, Sánchez M, Rodriguez S, Osinski M, Sacher J, Carpintero G, Lamela H. System analysis of wavelength beam combining of high-power diode lasers for photoacoustic endoscopy Proceedings of Spie - the International Society For Optical Engineering. 9888. DOI: 10.1117/12.2225954 |
0.354 |
|
| 2016 |
Kalagara H, Chu FH, Smolyakov GA, OsiNski M. Reciprocity principle and nonequivalence of counterpropagating modes in whistle-geometry ring lasers Proceedings of Spie - the International Society For Optical Engineering. 9742. DOI: 10.1117/12.2214602 |
0.351 |
|
| 2016 |
Leggio L, Gallego DC, Gawali SB, Dadrasnia E, Sánchez M, Rodríguez S, González M, Carpintero G, Osinski M, Lamela H. Optoacoustic response from graphene-based solutions embedded in optical phantoms by using 905-nm high-power diode-laser assemblies Progress in Biomedical Optics and Imaging - Proceedings of Spie. 9708. DOI: 10.1117/12.2207245 |
0.319 |
|
| 2015 |
Kalagara H, Smolyakov GA, Osinski M. Rate Equation Analysis of Q -Modulated Strongly Injection-Locked Whistle-Geometry Ring Lasers Ieee Journal of Selected Topics in Quantum Electronics. 21: 619-627. DOI: 10.1109/Jstqe.2015.2466681 |
0.366 |
|
| 2014 |
Chu FH, Smolyakov GA, Osinski M. Numerical analysis of frequency chirp in strongly injection-locked semiconductor ring lasers Proceedings of Spie - the International Society For Optical Engineering. 8980. DOI: 10.1117/12.2044107 |
0.341 |
|
| 2014 |
Smolyakov GA, Osinski M. Effect of light backscattering on high-speed modulation performance in strongly injection-locked unidirectional semiconductor ring lasers Proceedings of Spie - the International Society For Optical Engineering. 8980. DOI: 10.1117/12.2043355 |
0.354 |
|
| 2014 |
Kalagara H, Eliseev PG, Osinski M. Numerical modeling of improvement in slope sensitivity of InGaN-based ring laser rotation sensor Proceedings of Spie - the International Society For Optical Engineering. 8980. DOI: 10.1117/12.2042744 |
0.353 |
|
| 2014 |
Wang C, Osiński M, Even J, Grillot F. Phase-amplitude coupling characteristics in directly modulated quantum dot lasers Applied Physics Letters. 105: 221114. DOI: 10.1063/1.4903493 |
0.366 |
|
| 2013 |
Mercado E, Adhikari D, Smolyakov GA, Osiński M. Low-temperature characterization of a 1.55-μm multiple-quantum-well laser down to 10 K Proceedings of Spie - the International Society For Optical Engineering. 8619. DOI: 10.1117/12.2010029 |
0.388 |
|
| 2013 |
Kalagara H, Smolyakov GA, Osiński M. Rate equation analysis of high-speed photon-lifetime-modulated strongly injection-locked semiconductor ring lasers Proceedings of Spie. 8619: 861909. DOI: 10.1117/12.2008618 |
0.353 |
|
| 2013 |
Kalagara H, Eliseev PG, Osinski M. Induced anomalous dispersion in semiconductor lasers Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/Jstqe.2013.2250261 |
0.371 |
|
| 2013 |
Akins BA, Ivanov SA, Plumley JB, Stephens SM, Cook NC, Smolyakov GA, Osinski M. High-temperature ZnSe:Mn/ZnS nanophosphors with very high quantum efficiency for white LEDs Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. DOI: 10.1109/CLEOPR.2013.6600294 |
0.72 |
|
| 2012 |
Armijo LM, Brandt YI, Mathew D, Yadav S, Maestas S, Rivera AC, Cook NC, Withers NJ, Smolyakov GA, Adolphi NL, Monson TC, Huber DL, Smyth HD, Osiński M. Iron Oxide Nanocrystals for Magnetic Hyperthermia Applications. Nanomaterials (Basel, Switzerland). 2: 134-146. PMID 28348300 DOI: 10.3390/Nano2020134 |
0.641 |
|
| 2012 |
Rivera AC, Glazener NN, Cook NC, Withers NJ, Plumley JB, Akins BA, Carpenter K, Smolyakov GA, Busch RD, Osinśki M. Dysprosium-containing nanocrystals for thermal neutron detection Materials Research Society Symposium Proceedings. 1341: 105-110. DOI: 10.1557/Opl.2011.1484 |
0.792 |
|
| 2012 |
Osinski M, Smolyakov GA. Injection-locked microring lasers for ultrafast modulation Spie Newsroom. DOI: 10.1117/2.1201201.004072 |
0.304 |
|
| 2012 |
Armijo LM, Brandt YI, Rivera AC, Cook NC, Plumley JB, Withers NJ, Kopciuch M, Smolyakov GA, Huber DL, Smyth HD, Osinski M. Multifunctional superparamagnetic nanoparticles for enhanced drug transport in cystic fibrosis Progress in Biomedical Optics and Imaging - Proceedings of Spie. 8548. DOI: 10.1117/12.943621 |
0.74 |
|
| 2012 |
Rivera AC, Glazener NN, Cook NC, Maestas S, Akins BA, Armijo LM, Plumley JB, Withers NJ, Carpenter K, Smolyakov GA, Busch RD, Osiński M. Thermal neutron detection with PMMA nanocomposites containing dysprosium fluoride nanocrystals Proceedings of Spie - the International Society For Optical Engineering. 8358. DOI: 10.1117/12.921502 |
0.785 |
|
| 2012 |
Kalagara H, Eliseev PG, Osinski M. Numerical simulation of nonlinear mode interactions in ridge-waveguide semiconductor lasers Proceedings of Spie. 8255. DOI: 10.1117/12.914393 |
0.33 |
|
| 2012 |
Smolyakov GA, Fichou Y, Osinski M. Analysis of high-frequency modulation response of strongly injection-locked cascaded semiconductor ring lasers Ieee Journal of Quantum Electronics. 48: 1568-1577. DOI: 10.1109/Jqe.2012.2222869 |
0.33 |
|
| 2011 |
Smolyakov GA, Fichou Y, Osinski M. Rate equation analysis of dynamic response in strongly injection-locked cascaded semiconductor microring lasers Proceedings of Spie. 8255: 825508. DOI: 10.1117/12.913575 |
0.34 |
|
| 2011 |
Rivera AC, Glazener NN, Cook NC, Akins BA, Plumley JB, Withers NJ, Carpenter K, Smolyakov GA, Busch RD, Osiński M. Detection of thermal neutrons using gadolinium-oxide-based nanocrystals Proceedings of Spie - the International Society For Optical Engineering. 8018. DOI: 10.1117/12.883646 |
0.796 |
|
| 2011 |
Withersa NJ, Glazener NN, Plumley JB, Akins BA, Rivera AC, Cook NC, Smolyakov GA, Timmins GS, Osiński M. Locally increased mortality of gamma-irradiated cells in presence of lanthanide-halide nanoparticles Progress in Biomedical Optics and Imaging - Proceedings of Spie. 7909. DOI: 10.1117/12.877029 |
0.721 |
|
| 2011 |
Smolyakov GA, Osinski M. High-Speed Modulation Analysis of Strongly Injection-Locked Semiconductor Ring Lasers Ieee Journal of Quantum Electronics. 47: 1463-1471. DOI: 10.1109/Jqe.2011.2170189 |
0.347 |
|
| 2010 |
Plumley JB, Withers NJ, Rivera AC, Akins BA, Vargas JM, Carpenter K, Smolyakov GA, Busch RD, Osiński M. Thermal neutron detectors based on gadolinium-containing lanthanide-halide nanoscintillators Proceedings of Spie - the International Society For Optical Engineering. 7665. DOI: 10.1117/12.854903 |
0.799 |
|
| 2010 |
Withers NJ, Plumley JB, Akins BA, Rivera AC, Medina G, Smolyakov GA, Timmons GS, Osinski M. Radiation sensitivity enhancement in cells using high-Z nanoparticles Progress in Biomedical Optics and Imaging - Proceedings of Spie. 7575. DOI: 10.1117/12.848944 |
0.79 |
|
| 2010 |
Osinski M, Plumley JB, Withers NJ, Akins BA, Medina G, Rivera AC, Smolyakov GA. Synthesis and characterization of lanthanide halide scintillating nanocrystals for gamma radiation detection Iconn 2010 - Proceedings of the 2010 International Conference On Nanoscience and Nanotechnology. 189-192. DOI: 10.1109/ICONN.2010.6045245 |
0.8 |
|
| 2010 |
Withers NJ, Sankar K, Plumley JB, Akins BA, Memon TA, Rivera AC, Smolyakov GA, Osinski M. Optimization of Ce content in CexLa1-xF3 colloidal nanocrystals for gamma radiation detection Materials Research Society Symposium Proceedings. 1164: 93-98. |
0.794 |
|
| 2009 |
Osiński M, Jovin TM, Yamamoto K. Introduction to the special section on colloidal quantum dots for biomedical applications. Ieee Transactions On Nanobioscience. 8: 1-3. PMID 19556190 DOI: 10.1109/Tnb.2009.2021215 |
0.345 |
|
| 2009 |
Withers NJ, Sankar K, Plumley JB, Akins BA, Memon TA, Rivera AC, Smolyakov G, Osiński M. Optimization of Ce Content in Ce x La 1-x F 3 Colloidal Nanocrystals for Gamma Radiation Detection Mrs Proceedings. 1164. DOI: 10.1557/Proc-1164-L07-02 |
0.758 |
|
| 2009 |
Osinski M, Plumley JB, Withers NJ, Rivera AC, Akins BA, Sankar K, Gennady AS. Lanthanide-halide-based nanoscintillators for portable radiological detectors Proceedings of Spie - the International Society For Optical Engineering. 7306. DOI: 10.1117/12.819018 |
0.797 |
|
| 2009 |
Nathan J. W, Akins BA, Rivera AC, Plumley JB, Smolyakov GA, Osiński M. Lead-iodide-based nanoscintillators for detection of ionizing radiation Proceedings of Spie - the International Society For Optical Engineering. 7304. DOI: 10.1117/12.819004 |
0.756 |
|
| 2008 |
Sankar K, Akins BA, Memon TA, Withers NJ, Bowers ST, Gu T, Gu J, Greenberg MR, Smolyakov GA, Osinski M. Colloidal synthesis and characterization of optically active ZnO/ZnS core/shell nanocrystals Materials Research Society Symposium Proceedings. 1035: 262-267. DOI: 10.1557/Proc-1035-L11-12 |
0.684 |
|
| 2008 |
Sankar K, Akins BA, Memon TA, Withers NJ, Smolyakov GA, Osiński M. Synthesis and characterization of scintillating lead-iodide-based nanocrystals Progress in Biomedical Optics and Imaging - Proceedings of Spie. 6866. DOI: 10.1117/12.784060 |
0.714 |
|
| 2008 |
Withers NJ, Sankar K, Akins BA, Memon TA, Gu T, Gu J, Smolyakov GA, Greenberg MR, Boyle TJ, Osiński M. Rapid degradation of CdSe/ZnS colloidal quantum dots exposed to gamma irradiation Applied Physics Letters. 93. DOI: 10.1063/1.2978073 |
0.7 |
|
| 2007 |
Withers NJ, Sankar K, Akins BA, Memon TA, Gu J, Gu T, Bowers ST, Greenberg MR, Smolyakov GA, Busch RD, Osinski M. Effects of gamma irradiation on pptical properties of colloidal nanocrystals Materials Research Society Symposium Proceedings. 1038: 121-126. DOI: 10.1557/Proc-1038-O09-05 |
0.701 |
|
| 2007 |
Greenberg MR, Smolyakov GA, Boyle TJ, Osiński M. Synthesis and characterization of ZnO and ZnO/ZnS colloidal nanocrystals Proceedings of Spie. 6448: 644806. DOI: 10.1117/12.717630 |
0.316 |
|
| 2007 |
Cao HJ, Withers NJ, Smolyakov GA, Osiński M. Microwave frequency beating between monolithically integrated quantum-dot ring lasers Electronics Letters. 43: 1456-1458. DOI: 10.1049/El:20073008 |
0.701 |
|
| 2006 |
Greenberg MR, Smolyakov GA, Jiang Y, Boyle TJ, Osiński M. Synthesis and characterization of in-containing colloidal quantum dots Biomedical Optics. 6096. DOI: 10.1117/12.663315 |
0.382 |
|
| 2006 |
Osiński M, Cao H, Liu C, Eliseev PG. Monolithically integrated twin ring diode lasers for rotation sensing applications Journal of Crystal Growth. 288: 144-147. DOI: 10.1016/J.Jcrysgro.2005.12.019 |
0.709 |
|
| 2005 |
Xin Y-, Stintz A, Cao H, Osinski M, Lester LF. High Temperature Operation (>100℃) of InGaAs/GaAs All-Active Monolithic Passively-Mode-Locked Single Quantum Well Lasers The Japan Society of Applied Physics. 2005: 356-357. DOI: 10.7567/Ssdm.2005.E-6-4L |
0.6 |
|
| 2005 |
Greenberg MR, Chen W, Pulford BN, Smolyakov GA, Jiang YB, Bunge SD, Boyle TJ, Osiński M. Synthesis and characterization of InP and InN colloidal quantum dots Progress in Biomedical Optics and Imaging - Proceedings of Spie. 5705: 68-76. DOI: 10.1117/12.601507 |
0.379 |
|
| 2005 |
Cao H, Ling H, Liu C, Deng H, Benavidez M, Smagley VA, Caldwell RB, Peake GM, Smolyakov GA, Eliseev PG, Osiñski M. Large S-section-ring-cavity diode lasers: Directional switching, electrical diagnostics, and mode beating spectra Ieee Photonics Technology Letters. 17: 282-284. DOI: 10.1109/Lpt.2004.840060 |
0.78 |
|
| 2005 |
Smolyakov GA, Eliseev PG, Osinski M. Effects of resonant mode coupling on optical Characteristics of InGaN-GaN-AlGaN lasers Ieee Journal of Quantum Electronics. 41: 517-524. DOI: 10.1109/Jqe.2005.843619 |
0.334 |
|
| 2005 |
Smolyakov GA, Osinski M. Analysis of lateral-mode confinement in VCSELs with ring metal apertures Journal of Lightwave Technology. 23: 4278-4286. DOI: 10.1109/Jlt.2005.858210 |
0.303 |
|
| 2005 |
Cao H, Deng H, Ling H, Liu C, Smagley VA, Caldwell RB, Smolyakov GA, Gray AL, Lester LF, Eliseev PG, Osiński M. Highly unidirectional InAsInGaAsGaAs quantum-dot ring lasers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1931044 |
0.785 |
|
| 2005 |
Cao H, Liu C, Ling H, Deng H, Benavidez M, Smagley VA, Caldwell RB, Peake GM, Smolyakov GA, Eliseev PG, Osiński M. Frequency beating between monolithically integrated semiconductor ring lasers Applied Physics Letters. 86. DOI: 10.1063/1.1853532 |
0.78 |
|
| 2005 |
Liu C, Cao H, Smolyakov GA, Eliseev PG, Osinski M. Anomalous splitting in microwave mode-beating spectra of semiconductor ring lasers Electronics Letters. 41: 963-964. DOI: 10.1049/El:20052332 |
0.695 |
|
| 2004 |
Eliseev PG, Lee J, Osinski M. Electro-optical properties of UV-emitting InGaN heterostructures considering injection-induced conductivity Kvantovaya Elektronika. 34: 1127-1132. DOI: 10.1070/Qe2004V034N12Abeh002788 |
0.576 |
|
| 2003 |
Liu C, Su H, Cao H, Peake GM, Eliseev PG, Osinski M. Mode beating resonances in microwave spectra of long-cavity InGaAs/GaAs/AlGaAs GRIN-SCH lasers Frontiers in Optics. DOI: 10.1364/Fio.2003.Wd1 |
0.679 |
|
| 2003 |
Lee J, Eliseev PG, Osinski M, Lee D, Florescu DI, Guo S, Pophristic M. InGaN-based ultraviolet emitting heterostructures with quaternary AlInGaN barriers Ieee Journal of Selected Topics in Quantum Electronics. 9: 1239-1245. DOI: 10.1109/Jstqe.2003.819509 |
0.59 |
|
| 2003 |
Osiński M, Smagley VA, Lu M, Smolyakov GA, Eliseev PG, Riely BP, Shen PH, Simonis GJ. Self-Consistent Calculation of Current Self-Distribution Effect in GaAs-AlGaAs Oxide-Confined VCSELs Ieee Journal On Selected Topics in Quantum Electronics. 9: 1422-1430. DOI: 10.1109/Jstqe.2003.819507 |
0.767 |
|
| 2003 |
Zhao Y, Smolyakov GA, Osinski M. High-performance InGaAs-GaAs-AlGaAs broad-area diode lasers with impurity-free intermixed active region Ieee Journal of Selected Topics in Quantum Electronics. 9: 1333-1339. DOI: 10.1109/Jstqe.2003.819506 |
0.417 |
|
| 2002 |
El-Emawy AA, Nuntawong N, Cao H, Liu C, Xu H, Osiński M. MOCVD Growth and Characterization of InNAs/GaAs Quantum Wells Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M8.25 |
0.69 |
|
| 2002 |
El-Emawy AA, Cao H, Nuntawong N, Liu C, Osiński M. MOCVD Growth and Characterization of GaInNAs/GaAs/InGaAs/GaAs Quantum Well Structures Mrs Proceedings. 744. DOI: 10.1557/Proc-744-M8.16 |
0.694 |
|
| 2002 |
Guo S, Pophristic M, Lee DS, Peres B, Ferguson IT, Lee J, Osinski M. Quaternary InAlGaN-based multi-quantum wells for ultraviolet light emitting diode application Proceedings of Spie - the International Society For Optical Engineering. 4776: 18-25. DOI: 10.1117/12.457171 |
0.54 |
|
| 2001 |
Osiński M, Svimonishvili T, Smolyakov GA, Smagley VA, Maćkowiak P, Nakwaski W. Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures Ieee Photonics Technology Letters. 13: 687-689. DOI: 10.1109/68.930415 |
0.719 |
|
| 2000 |
Osinski M, Thompson WE, Sarangan AM, Bogatov AP. Theory of angled grating semiconductor lasers: comparison of an analytical model and BPM simulation High-Power Lasers and Applications. 3889: 108-119. DOI: 10.1117/12.380852 |
0.342 |
|
| 2000 |
Eliseev PG, Osinski M, Lee J, Sugahara T, Sakai S. Band-tail model and temperature-induced blue-shift in photoluminescence spectra of In x Ga 1-x N grown on sapphire Journal of Electronic Materials. 29: 332-341. DOI: 10.1007/S11664-000-0073-9 |
0.574 |
|
| 1999 |
Taylor EW, Osinski M, Watson MD, Svimonishvili T, Pearson SD, Zetts JS. Overview of photonic materials and components for application in space environments Remote Sensing. 3872: 72-83. DOI: 10.1117/12.373287 |
0.373 |
|
| 1999 |
Eliseev PG, Smolyakov GA, Osinski M. Ghost modes and resonant effects in AlGaN-InGaN-GaN lasers Ieee Journal of Selected Topics in Quantum Electronics. 5: 771-779. DOI: 10.1109/2944.788450 |
0.301 |
|
| 1999 |
Barton DL, Osinski M, Perlin P, G. Eliseev P, Lee J. Single-quantum well InGaN green light emitting diode degradation under high electrical stress Microelectronics Reliability. 39: 1219-1227. DOI: 10.1016/S0026-2714(99)00010-4 |
0.58 |
|
| 1998 |
Osiński M, Lee J, Barton DL. Role of Nanopipes in Degradation of AlGaN/InGaN/GaN Devices Operating at High Voltage Mrs Proceedings. 512: 205. DOI: 10.1557/Proc-512-205 |
0.514 |
|
| 1998 |
Yu EC, Osinski M, Nakwaski W, Turowski M, Przekwas AJ. Thermal crosstalk in arrays of proton-implanted top-surface-emitting lasers High-Power Lasers and Applications. 3283: 384-395. DOI: 10.1117/12.316672 |
0.327 |
|
| 1998 |
Nakwaski W, Osiński M. III: Thermal Properties of Vertical-Cavity Surface-Emitting Semiconductor Lasers Progress in Optics. 38: 165-262. DOI: 10.1016/S0079-6638(08)70351-2 |
0.364 |
|
| 1998 |
Weinstein BA, Perlin P, Christensen NE, Gorczyca I, Iota V, Suski T, Wisniewski P, Osinski M, Eliseev PG. Cubic InN inclusions : Proposed explanation for the small pressure-shift anomaly of the luminescence in InGaN-based quantum wells Solid State Communications. 106: 567-571. DOI: 10.1016/S0038-1098(98)00123-9 |
0.342 |
|
| 1998 |
Osiński M, Barton DL, Perlin P, Lee J. Effects of high electrical stress on GaN/InGaN/AlGaN single-quantum-well light-emitting diodes Journal of Crystal Growth. 189: 808-811. DOI: 10.1016/S0022-0248(98)00299-1 |
0.573 |
|
| 1998 |
Osiński M, Perlin P, Eliseev PG, Lee J, Smagley VA. Comprehensive studies of light emission from GaN/InGaN/AlGaN single-quantum-well structures Journal of Crystal Growth. 189: 803-807. DOI: 10.1016/S0022-0248(98)00298-X |
0.781 |
|
| 1998 |
Leal AA, Osinski M, Conforti E. Effects of a thermal-dependent electric field penetration depth on threshold behavior of surface-emitting lasers Microwave and Optical Technology Letters. 17: 94-97. DOI: 10.1002/(Sici)1098-2760(19980205)17:2<94::Aid-Mop6>3.0.Co;2-D |
0.35 |
|
| 1997 |
Eliseev PG, Glebov AG, Osinski M. Current self-distribution effect in diode lasers: analytic criterion and numerical study Ieee Journal of Selected Topics in Quantum Electronics. 3: 499-506. DOI: 10.1109/2944.605700 |
0.335 |
|
| 1997 |
Eliseev PG, Perlin P, Lee J, Osiński M. Blue Temperature-Induced Shift And Band-Tail Emission In Ingan-Based Light Sources Applied Physics Letters. 71: 569-571. DOI: 10.1063/1.119797 |
0.584 |
|
| 1997 |
Perlin P, Iota V, Weinstein BA, Wiśniewski P, Suski T, Eliseev PG, Osiński M. Influence of pressure on photoluminescence and electroluminescence in GaN/InGaN/AlGaN quantum wells Applied Physics Letters. 70: 2993-2995. DOI: 10.1063/1.118767 |
0.339 |
|
| 1997 |
Osinski M, Perlin P, Schone H, Paxton AH, Taylor EW. Effects of proton irradiation on AlGaN/InGaN/GaN green light emitting diodes Electronics Letters. 33: 1252-1254. DOI: 10.1049/El:19970816 |
0.347 |
|
| 1997 |
Lear KL, Hou HQ, Banas JJ, Hammons BE, Furioli J, Osinski M. Vertical cavity lasers on p-doped substrates Electronics Letters. 33: 783-784. DOI: 10.1049/El:19970492 |
0.335 |
|
| 1997 |
Osiński M, Eliseev PG. Radiative recombination mechanisms in high brightness Nichia blue LEDs Solid-State Electronics. 41: 155-157. DOI: 10.1016/S0038-1101(97)82547-6 |
0.305 |
|
| 1997 |
Eliseev PG, Perlin P, Furioli J, Sartori P, Mu J, Osiński M. Tunneling current and electroluminescence in InGaN: Zn,Si/AlGaN/GaN blue light emitting diodes Journal of Electronic Materials. 26: 311-319. DOI: 10.1007/S11664-997-0170-0 |
0.394 |
|
| 1996 |
Osiński M, Perlin P, Eliseev PG, Liu G, Barton DL. Degradation of Single-Quantum Well InGaN Green Light Emitting Diodes Under High Electrical Stress Mrs Proceedings. 449: 1179. DOI: 10.1557/Proc-449-1179 |
0.339 |
|
| 1996 |
Perlin P, Osiński M, Eliseev PG. Optical and Electrical Characteristics of Single-Quantum-Well InGaN Light-Emitting Diodes Mrs Proceedings. 449. DOI: 10.1557/Proc-449-1173 |
0.393 |
|
| 1996 |
Eliseev PG, Smagley VA, Osiński M. Analysis of Radiative Recombination and Optical Gain in Gallium Nitride-Based Heterostructures Mrs Proceedings. 421. DOI: 10.1557/Proc-421-419 |
0.755 |
|
| 1996 |
Perlin P, Osiński M, Eliseev PG, Smagley VA, Mu J, Banas M, Sartori P. Low‐temperature study of current and electroluminescence in InGaN/AlGaN/GaN double‐heterostructure blue light‐emitting diodes Applied Physics Letters. 69: 1680-1682. DOI: 10.1063/1.117026 |
0.771 |
|
| 1996 |
Osiński M, Zeller J, Chiu P, Phillips BS, Barton DL. AlGaN/InGaN/GaN blue light emitting diode degradation under pulsed current stress Applied Physics Letters. 69: 898-900. DOI: 10.1063/1.116936 |
0.314 |
|
| 1995 |
Zeller J, Eliseev PG, Sartori P, Perlin P, Osiński M. Electrical Properties of Nichia AlGaN/InGaN/GaN Blue LEDs in a Wide Current/Temperature Range Mrs Proceedings. 395: 937. DOI: 10.1557/Proc-395-937 |
0.327 |
|
| 1995 |
Osinski M, Nakwaski W. Thermal analysis of closely-packed two-dimensional etched-well surface-emitting laser arrays Ieee Journal of Selected Topics in Quantum Electronics. 1: 681-696. DOI: 10.1109/2944.401258 |
0.344 |
|
| 1993 |
Osinski M. Coupled-cavity diode lasers Proceedings of Spie. 1868: 220-234. DOI: 10.1117/12.150614 |
0.361 |
|
| 1993 |
Zhou P, Cheng J, Sun SZ, Hersee SD, Osinski M, Zolper JC, Myers DR, Vawter GA. Surface-emitting laser-based optical switching: An update Proceedings of Spie. 1849: 298-306. DOI: 10.1117/12.147104 |
0.376 |
|
| 1993 |
Sze T, Mahbobzadeh AM, Cheng J, Hersee SD, Osinski M, Brueck SRJ, Malloy KJ. Profiling of MOCVD- and MBE-grown VCSEL wafers for WDM sources Proceedings of Spie. 1850: 109-114. DOI: 10.1117/12.146897 |
0.304 |
|
| 1993 |
Nakwaski W, Osinski M. Self-consistent calculation of temperature profiles in proton-implanted top-surface-emitting diode lasers Fibers. 1788: 108-115. DOI: 10.1117/12.141100 |
0.317 |
|
| 1993 |
Nakwaski W, Osinski M. Thermal analysis of GaAs-AlGaAs etched-well surface-emitting double-heterostructure lasers with dielectric mirrors Ieee Journal of Quantum Electronics. 29: 1981-1995. DOI: 10.1109/3.234461 |
0.364 |
|
| 1993 |
Osinski M, Nakwaski W. Effective thermal conductivity analysis of 1.55 mu m InGaAsP/InP vertical-cavity top-surface-emitting microlasers Electronics Letters. 29: 1015-1016. DOI: 10.1049/El:19930677 |
0.327 |
|
| 1992 |
Luo J, Osiński M. Multimode small-signal analysis of side-mode injection-locked semiconductor lasers Japanese Journal of Applied Physics. 31. DOI: 10.1143/Jjap.31.L685 |
0.32 |
|
| 1992 |
Nakwaski W, Osinski M. Thermal resistance of top-surface-emitting vertical-cavity semiconductor lasers and monolithic two-dimensional arrays Electronics Letters. 28: 572-574. DOI: 10.1049/El:19920361 |
0.343 |
|
| 1991 |
Nakwaski W, Osinski M. Temperature Profiles in Etched-Well Surface-Emitting Semiconductor Lasers Japanese Journal of Applied Physics. 30. DOI: 10.1143/Jjap.30.L596 |
0.321 |
|
| 1991 |
Nakwaski W, Osinski M. Thermal properties of etched-well surface-emitting semiconductor lasers Ieee Journal of Quantum Electronics. 27: 1391-1401. DOI: 10.1109/3.89956 |
0.362 |
|
| 1991 |
Luo J-, Osinski M. Stable-locking bandwidth in sidemode injection locked semiconductor lasers Electronics Letters. 27: 1737-1739. DOI: 10.1049/El:19911081 |
0.301 |
|
| 1990 |
Cherng C, Salvi TC, Osiński M, McInerney JG. Near field wavefront measurements of semiconductor laser arrays by shearing interferometry Applied Optics. 29: 2701-2706. PMID 20567317 DOI: 10.1364/Ao.29.002701 |
0.329 |
|
| 1989 |
Park J, Seo D, McInerney JG, Dente GC, Osiński M. Low-frequency self-pulsations in asymmetric external-cavity semiconductor lasers due to multiple-feedback effects Optics Letters. 14: 1054-1056. PMID 19753053 DOI: 10.1364/Ol.14.001054 |
0.328 |
|
| 1989 |
Seo D-, Park J-, McInerney JG, Osinski M. Multiple feedback effects in asymmetric external cavity semiconductor lasers Ieee Journal of Quantum Electronics. 25: 2229-2238. DOI: 10.1109/3.42051 |
0.34 |
|
| 1989 |
Raja MYA, Brueck SRJ, Osinski M, Schaus CF, McInerney JG, Brennan TM, Hammons BE. Resonant periodic gain surface-emitting semiconductor lasers Ieee Journal of Quantum Electronics. 25: 1500-1512. DOI: 10.1109/3.29287 |
0.432 |
|
| 1989 |
Takahashi R, Liu H, Osiński M, Kamiya T. Picosecond single‐mode pulse compression using a 1.3 μm Fabry–Perot laser diode, a dispersion‐shifted fiber, and a grating monochromator Applied Physics Letters. 55: 2377-2379. DOI: 10.1063/1.102022 |
0.317 |
|
| 1989 |
Raja MYA, Brueck SRJ, Osiński M, Schaus CF, McInerney JG, Brennan TM, Hammons BE. Erratum: Surface‐emitting, multiple quantum well GaAs/AlGaAs laser with wavelength‐resonant periodic gain medium [Appl. Phys. Lett. 53, 1678 (1988)] Applied Physics Letters. 54: 677-677. DOI: 10.1063/1.101381 |
0.367 |
|
| 1989 |
Seo D, Park J, McInerney JG, Osiński M. Compound cavity modes in semiconductor lasers with asymmetric optical feedback Applied Physics Letters. 54: 990-992. DOI: 10.1063/1.100758 |
0.367 |
|
| 1988 |
Yasin M, Raja A, Brueck SRJ, Osinski M, Mclnerney JG. Degradation of Photoluminescence Efficiency in GaAs Under Low Intensity Laser Irradiation Mrs Proceedings. 126: 265. DOI: 10.1557/Proc-126-265 |
0.352 |
|
| 1988 |
Raja MYA, Brueck SRJ, Osiński M, Schaus CF, McInerney JG, Brennan TM, Hammons BE. Surface-emitting, multiple quantum well GaAs/AlGaAs laser with wavelength-resonant periodic gain medium Applied Physics Letters. 53: 1678-1680. DOI: 10.1063/1.99795 |
0.433 |
|
| 1988 |
Raja MYA, Brueck SRJ, Osinski M, McInerney J. Laser‐induced degradation of GaAs photoluminescence Applied Physics Letters. 52: 625-627. DOI: 10.1063/1.99385 |
0.359 |
|
| 1988 |
Raja MYA, Brueck SRJ, Osinski M, Schaus CF, McInerney JG, Brennan TM, Hammons BL. Novel wavelength-resonant optoelectronic structure and its application to surface-emitting semiconductor lasers Electronics Letters. 24: 1140-1142. DOI: 10.1049/El:19880775 |
0.419 |
|
| 1988 |
Seo DS, Park JD, McInerney JG, Osinski M. Effects of feedback asymmetry in external-cavity semiconductor laser systems Electronics Letters. 24: 726-728. DOI: 10.1049/El:19880489 |
0.334 |
|
| 1987 |
Osinski M, Buus J. Linewidth broadening factor in semiconductor lasers--An overview Ieee Journal of Quantum Electronics. 23: 9-29. DOI: 10.1109/Jqe.1987.1073204 |
0.343 |
|
| 1985 |
Osinski M, Adams MJ. Picosecond Pulse Analysis of Gain-Switched 1.55 μm InGaAsP Lasers Ieee Journal of Quantum Electronics. 21: 1929-1936. DOI: 10.1109/Jqe.1985.1072609 |
0.35 |
|
| 1985 |
Landsberg P, Abrahams M, Osinski M. Evidence of no k-selection in gain spectra of quantum well AlGaAs laser diodes Ieee Journal of Quantum Electronics. 21: 24-28. DOI: 10.1109/Jqe.1985.1072535 |
0.347 |
|
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