| Year |
Citation |
Score |
| 2018 |
Eswara S, Yedra L, Pshenova A, Sarbada V, Audinot J, Hull R, Wirtz T. In Situ Correlative Microscopy Combining Transmission Electron Microscopy and Secondary Ion Mass Spectrometry Microscopy and Microanalysis. 24: 380-381. DOI: 10.1017/S1431927618002398 |
0.324 |
|
| 2017 |
Zhang Q, Bruck AM, Bock DC, Li J, Sarbada V, Hull R, Stach EA, Takeuchi KJ, Takeuchi ES, Marschilok AC. Visualization of structural evolution and phase distribution of a lithium vanadium oxide (Li1.1V3O8) electrode via an operando and in situ energy dispersive X-ray diffraction technique. Physical Chemistry Chemical Physics : Pccp. PMID 28530304 DOI: 10.1039/C7Cp02239E |
0.506 |
|
| 2017 |
Zhang Q, Brady AB, Pelliccione CJ, Bock DC, Bruck AM, Li J, Sarbada V, Hull R, Stach EA, Takeuchi KJ, Takeuchi ES, Liu P, Marschilok AC. Investigation of Structural Evolution of Li1.1V3O8 by In Situ X-ray Diffraction and Density Functional Theory Calculations Chemistry of Materials. 29: 2364-2373. DOI: 10.1021/Acs.Chemmater.7B00096 |
0.567 |
|
| 2016 |
Hull R, Paraveneh H, Wu X. New Methods for Measuring Chemistry and Temperature Using Scanning Ion and Electron Beams Microscopy and Microanalysis. 22: 610-611. DOI: 10.1017/S1431927616003901 |
0.327 |
|
| 2015 |
Hull R, Parvaneh H, Andersen D, Bean JC. Materials genomics of thin film strain relaxation by misfit dislocations Journal of Applied Physics. 118. DOI: 10.1063/1.4936364 |
0.762 |
|
| 2014 |
Parvaneh H, Hull R. Ion-induced auger electron spectroscopy as a potential route to chemical focused-ion beam tomography Microscopy and Microanalysis. 20: 310-311. DOI: 10.1017/S1431927614003274 |
0.761 |
|
| 2014 |
Parvaneh H, Hull R. Examination of ion-induced Auger electron spectra of Ti, Cr and Co in a mass-selecting Focused Ion Beam with a gold-silicon liquid metal source Vacuum. 110: 69-73. DOI: 10.1016/j.vacuum.2014.08.012 |
0.773 |
|
| 2014 |
Balasubramanian P, Floro JA, Gray JL, Hull R. Nano-scale chemistry of self-assembled nanostructures in epitaxial SiGe growth Journal of Crystal Growth. 400: 15-20. DOI: 10.1016/j.jcrysgro.2014.04.023 |
0.306 |
|
| 2013 |
Chee SW, Kammler M, Balasubramanian P, Reuter MC, Hull R, Ross FM. Microstructural changes in silicon induced by patterning with focused ion beams of Ga, Si and Au. Ultramicroscopy. 127: 126-31. PMID 22951265 DOI: 10.1016/J.Ultramic.2012.07.004 |
0.306 |
|
| 2013 |
Gray JL, Nichols PL, Hull R, Floro JA. One-dimensional lateral growth of epitaxial islands on focused ion beam patterned substrates Journal of Applied Physics. 113. DOI: 10.1063/1.4778708 |
0.428 |
|
| 2012 |
He L, Hull R. Quantification of electron-phonon scattering for determination of temperature variations at high spatial resolution in the transmission electron microscope. Nanotechnology. 23: 205705. PMID 22543637 DOI: 10.1088/0957-4484/23/20/205705 |
0.326 |
|
| 2012 |
Yin W, Kell CD, He L, Dolph MC, Duska C, Lu J, Hull R, Floro JA, Wolf SA. Enhanced magnetic and electrical properties in amorphous Ge:Mn thin films by non-magnetic codoping Journal of Applied Physics. 111. DOI: 10.1063/1.3679076 |
0.309 |
|
| 2011 |
Murphy JK, Hull R, Pyle D, Wang H, Gray J, Floro J. Control of semiconductor quantum dot nanostructures: Variants of Si x Ge1-x/Si quantum dot molecules Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29: 0110291-0110295. DOI: 10.1116/1.3533938 |
0.362 |
|
| 2010 |
Yin W, He L, Dolph MC, Lu J, Hull R, Wolf SA. Modulation of the magnetism in ion implanted MnxGe1-x thin films by rapid thermal anneal Journal of Applied Physics. 108. DOI: 10.1063/1.3486481 |
0.346 |
|
| 2009 |
Portavoce A, Kammler M, Hull R, Reuter MC, Copel M, Ross FM. Growth of nanostructures by locally modified surface reactivity Materials Science in Semiconductor Processing. 12: 25-30. DOI: 10.1016/J.Mssp.2009.07.001 |
0.379 |
|
| 2008 |
He L, Johansson J, Murayama M, Hull R. Focused ion beam fabrication of novel core-shell nanowire structures. Nanotechnology. 19: 445610. PMID 21832742 DOI: 10.1088/0957-4484/19/44/445610 |
0.377 |
|
| 2008 |
Robertson IM, Ferreira PJ, Dehm G, Hull R, Stach EA. Visualizing the Behavior of Dislocations—Seeing is Believing Mrs Bulletin. 33: 122-131. DOI: 10.1557/Mrs2008.25 |
0.523 |
|
| 2008 |
Hull R, Floro J, Graham J, Gray J, Gherasimova M, Portavoce A, Ross FM. Synthesis and functionalization of epitaxial quantum dot nanostructures for nanoelectronic architectures Materials Science in Semiconductor Processing. 11: 160-168. DOI: 10.1016/J.Mssp.2008.10.011 |
0.373 |
|
| 2008 |
West KG, Lu J, He L, Kirkwood D, Chen W, Adl TP, Osofsky MS, Qadri SB, Hull R, Wolf SA. Ferromagnetism in rutile structure Cr doped VO 2 thin films prepared by reactive-bias target ion beam deposition Journal of Superconductivity and Novel Magnetism. 21: 87-92. DOI: 10.1007/S10948-007-0303-Y |
0.316 |
|
| 2007 |
Wu C, Stach EA, Hull R. Nanoscale mechanisms of misfit dislocation propagation in undulated Si1−xGex/Si(100) epitaxial thin films Nanotechnology. 18: 165705. DOI: 10.1088/0957-4484/18/16/165705 |
0.638 |
|
| 2007 |
Hull R, Graham J, Kubis A, Portavoce A, Ross F. Assembly and Analysis of Ordered Semiconductor Quantum Dot Arrays by Focused Ion Beam Nanofabrication and Tomography Microscopy and Microanalysis. 13: 176-177. DOI: 10.1017/S1431927607072649 |
0.301 |
|
| 2007 |
Karmous A, Berbezier I, Ronda A, Hull R, Graham J. Ordering of Ge nanocrystals using FIB nanolithography Surface Science. 601: 2769-2773. DOI: 10.1016/J.Susc.2006.12.075 |
0.396 |
|
| 2006 |
Chen C, Cabral MJ, Hull R, Harriott LR. Fabrication of Magnetic Nanostructures for MRAM using Electron Beam and Focused Ion Beam Exposure of HSQ Mrs Proceedings. 961. DOI: 10.1557/Proc-0961-O09-05-P02-05 |
0.349 |
|
| 2006 |
Vandervelde TE, Atha S, Hull R, Pernell TL, Bean JC. Systematic studies of SiGeSi islands nucleated via separate in situ or ex situ Ga + focused ion beam-guided growth techniques Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 375-381. DOI: 10.1116/1.2172952 |
0.425 |
|
| 2006 |
Bansal RK, Kubis A, Hull R, Fitz-Gerald JM. High-resolution three-dimensional reconstruction: A combined scanning electron microscope and focused ion-beam approach Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 554-561. DOI: 10.1116/1.2167987 |
0.337 |
|
| 2006 |
Leite MS, Gray JL, Hull R, Floro JA, Magalhães-Paniago R, Medeiros-Ribeiro G. X-ray diffraction mapping of strain fields and chemical composition of SiGe:Si(001) quantum dot molecules Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.121308 |
0.397 |
|
| 2006 |
Portavoce A, Kammler M, Hull R, Reuter MC, Ross FM. Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces Nanotechnology. 17: 4451-4455. DOI: 10.1088/0957-4484/17/17/028 |
0.403 |
|
| 2006 |
Wu C, Hull R. Composition and stress fields in undulated Si0.7Ge0.3∕Si(100) thin films Journal of Applied Physics. 100: 83510. DOI: 10.1063/1.2360785 |
0.331 |
|
| 2006 |
Gray JL, Hull R, Floro JA. Periodic arrays of epitaxial self-assembled SiGe quantum dot molecules grown on patterned Si substrates Journal of Applied Physics. 100. DOI: 10.1063/1.2358003 |
0.378 |
|
| 2006 |
Kubis AJ, Vandervelde TE, Bean JC, Dunn DN, Hull R. Analysis of the three-dimensional ordering of epitaxial Ge quantum dots using focused ion beam tomography Applied Physics Letters. 88. DOI: 10.1063/1.2217930 |
0.438 |
|
| 2006 |
Vandervelde TE, Sun K, Merz JL, Kubis A, Hull R, Pernell TL, Bean JC. The effect of two-temperature capping on germanium/silicon quantum dots and analysis of superlattices so composed Journal of Applied Physics. 99. DOI: 10.1063/1.2203203 |
0.446 |
|
| 2006 |
Zhang XB, Ryou JH, Dupuis RD, He L, Hull R, Walter G, Holonyak N. Effect of thin strain-compensated Al 0.6Ga 0.4P layers on the growth of multiple-stacked InP/In 0.5Al 0.3Ga 0.2P quantum dots Journal of Electronic Materials. 35: 701-704. DOI: 10.1007/S11664-006-0124-Y |
0.346 |
|
| 2005 |
Gray JL, Hull R, Lam CH, Sutter P, Means J, Floro JA. Beyond the heteroepitaxial quantum dot: Self-assembling complex nanostructures controlled by strain and growth kinetics Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.155323 |
0.352 |
|
| 2005 |
Lei RZ, Tsai W, Aberg I, O'Reilly TB, Hoyt JL, Antoniadis DA, Smith HI, Paul AJ, Green ML, Li J, Hull R. Strain relaxation in patterned strained silicon directly on insulator structures Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2149153 |
0.377 |
|
| 2005 |
Li J, Anjum D, Hull R, Xia G, Hoyt JL. Nanoscale stress analysis of strained-Si metal-oxide-semiconductor field-effect transistors by quantitative electron diffraction contrast imaging Applied Physics Letters. 87: 222111. DOI: 10.1063/1.2135388 |
0.395 |
|
| 2004 |
Wu C, Hull R. Nano-scale Stress and Compositional Analysis of Epitaxial Si 1-x Ge x /Si (100) Undulated Films Mrs Proceedings. 854. DOI: 10.1557/Proc-854-U3.8 |
0.357 |
|
| 2004 |
Kubis AJ, Vandervelde TE, Bean JC, Dunn DN, Hull R. Analysis of the Three-Dimensional Nanoscale Relationship of Ge Quantum Dots in a Si Matrix Using Focused Ion Beam Tomography. Mrs Proceedings. 818. DOI: 10.1557/Proc-818-M14.6.1 |
0.471 |
|
| 2004 |
Du Y, Atha S, Hull R, Groves JF, Lyubinetsky I, Baer DR. Guided Control of Cu 2 O Nanodot Self-Assembly on SrTiO 3 (100) Mrs Proceedings. 811. DOI: 10.1557/Proc-811-E4.4 |
0.366 |
|
| 2004 |
Xia G, Nayfeh HM, Lee ML, Fitzgerald EA, Antoniadis DA, Anjum DH, Li J, Hull R, Klymko N, Hoyt JL. Impact of ion implantation damage and thermal budget on mobility enhancement in strained-Si N-channel MOSFETs Ieee Transactions On Electron Devices. 51: 2136-2144. DOI: 10.1109/Ted.2004.839116 |
0.389 |
|
| 2004 |
Portavoce A, Kammler M, Hull R, Reuter MC, Copel M, Ross FM. Growth kinetics of Ge islands during Ga-surfactant-mediated ultrahigh vacuum chemical vapor deposition on Si(001) Physical Review B. 70: 195306. DOI: 10.1103/Physrevb.70.195306 |
0.357 |
|
| 2004 |
Karmous A, Cuenat A, Ronda A, Berbezier I, Atha S, Hull R. Ge dot organization on Si substrates patterned by focused ion beam Applied Physics Letters. 85: 6401-6403. DOI: 10.1063/1.1828597 |
0.368 |
|
| 2004 |
Gray JL, Hull R, Flora JA. Formation of one-dimensional surface grooves from pit instabilities in annealed SiGe/Si(100) epitaxial films Applied Physics Letters. 85: 3253-3255. DOI: 10.1063/1.1801151 |
0.442 |
|
| 2004 |
Du Y, Atha S, Hull R, Groves JF, Lyubinetsky I, Baer DR. Focused-ion-beam directed self-assembly of Cu2O islands on SrTiO3(100) Applied Physics Letters. 84: 5213-5215. DOI: 10.1063/1.1765212 |
0.351 |
|
| 2004 |
Ware ME, Nemanich RJ, Gray JL, Hull R. Analysis of a nonorthogonal pattern of misfit dislocation arrays in SiGe epitaxy on high-index Si substrates Journal of Applied Physics. 95: 115-122. DOI: 10.1063/1.1630362 |
0.385 |
|
| 2004 |
Gray JL, Atha S, Hull R, Floro JA. Hierarchical self-assembly of epitaxial semiconductor nanostructures Nano Letters. 4: 2447-2450. DOI: 10.1021/Nl048443E |
0.309 |
|
| 2004 |
Kubis AJ, Shiflet GJ, Hull R, Dunn DN. Focused ion-beam tomography Metallurgical and Materials Transactions a-Physical Metallurgy and Materials Science. 35: 1935-1943. DOI: 10.1007/S11661-004-0142-4 |
0.3 |
|
| 2003 |
Williamson MJ, Tromp RM, Vereecken PM, Hull R, Ross FM. Dynamic microscopy of nanoscale cluster growth at the solid-liquid interface. Nature Materials. 2: 532-6. PMID 12872162 DOI: 10.1038/Nmat944 |
0.304 |
|
| 2003 |
Vandervelde TE, Atha S, Pernell TL, Hull R, Bean JC. Systematic studies of SiGe/Si islands nucleated via separate in situ, or ex situ, Ga+ focused ion beam-guided growth techniques Mrs Proceedings. 794. DOI: 10.1557/Proc-794-T4.7 |
0.464 |
|
| 2003 |
Vandervelde TE, Kumar P, Kobayashi T, Gray JL, Pernell T, Floro JA, Hull R, Bean JC. Growth of quantum fortress structures in Si 1 - xGe x/Si via combinatorial deposition Applied Physics Letters. 83: 5205-5207. DOI: 10.1063/1.1636268 |
0.475 |
|
| 2003 |
Drake TS, Ní Chléirigh C, Lee ML, Pitera AJ, Fitzgerald EA, Antoniadis DA, Anjum DH, Li J, Hull R, Klymko N, Hoyt JL. Effect of rapid thermal annealing on strain in ultrathin strained silicon on insulator layers Applied Physics Letters. 83: 875-877. DOI: 10.1063/1.1598649 |
0.4 |
|
| 2003 |
Hull R, Gray JL, Kammler M, Vandervelde T, Kobayashi T, Kumar P, Pernell T, Bean JC, Floro JA, Ross FM. Precision placement of heteroepitaxial semiconductor quantum dots Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 101: 1-8. DOI: 10.1016/S0921-5107(02)00680-3 |
0.491 |
|
| 2003 |
Drake TS, Chléirigh CN, Lee ML, Pitera AJ, Fitzgerald EA, Antoniadis DA, Anjum DH, Li J, Hull R, Klymko N, Hoyt JL. Fabrication of ultra-thin strained silicon on insulator Journal of Electronic Materials. 32: 972-975. DOI: 10.1007/S11664-003-0232-X |
0.416 |
|
| 2002 |
Hull R, Gray J, Wu CC, Atha S, Floro JA. Interaction between surface morphology and misfit dislocations as strain relaxation modes in lattice-mismatched heteroepitaxy Journal of Physics: Condensed Matter. 14: 12829-12841. DOI: 10.1088/0953-8984/14/48/323 |
0.447 |
|
| 2002 |
Gray JL, Hull R, Floro JA. Control of surface morphology through variation of growth rate in SiGe/Si(100) epitaxial films: Nucleation of "quantum fortresses", Applied Physics Letters. 81: 2445-2447. DOI: 10.1063/1.1509094 |
0.361 |
|
| 2002 |
Ryou JH, Dupuis RD, Walter G, Holonyak N, Mathes DT, Hull R, Reddy CV, Narayanamurti V. Properties of InP self-assembled quantum dots embedded in In 0.49(Al xGa 1-x) 0.51P for visible light emitting laser applications grown by metalorganic chemical vapor deposition Journal of Applied Physics. 91: 5313-5320. DOI: 10.1063/1.1454205 |
0.304 |
|
| 2001 |
Stach EA, Freeman T, Minor AM, Owen DK, Cumings J, Wall MA, Chraska T, Hull R, Morris JW, Jr A, Zettl U. Development of a Nanoindenter for In Situ Transmission Electron Microscopy. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 7: 507-517. PMID 12597795 DOI: 10.1007/S10005-001-0012-4 |
0.606 |
|
| 2001 |
Cabral MJ, Lye WK, Bean JC, Reed ML, Chraska T, Mesarovic SD, Hull R, Phillips AB. Induced crystallization as a nonlithographic pattern transfer technique for nanofabrication Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 2793-2796. DOI: 10.1116/1.1420532 |
0.406 |
|
| 2001 |
Stach EA, Hull R. Enhancement of dislocation velocities by stress-assisted kink nucleation at the native oxide/SiGe interface Applied Physics Letters. 79: 335-337. DOI: 10.1063/1.1384904 |
0.6 |
|
| 2001 |
Ryou JH, Dupuis RD, Walter G, Kellogg DA, Holonyak N, Mathes DT, Hull R, Reddy CV, Narayanamurti V. Photopumped red-emitting InP/In0.5Al0.3Ga0.2P self-assembled quantum dot heterostructure lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 78: 4091-4093. DOI: 10.1063/1.1382622 |
0.316 |
|
| 2001 |
Ryou JH, Dupuis RD, Mathes DT, Hull R, Reddy CV, Narayanamurti V. High-density InP self-assembled quantum dots embedded in In0.5Al0.5P grown by metalorganic chemical vapor deposition Applied Physics Letters. 78: 3526-3528. DOI: 10.1063/1.1376665 |
0.305 |
|
| 2001 |
Williamson MJ, Dunn DN, Hull R, Kodambaka S, Petrov I, Greene JE. Evolution of nanoscale texture in ultrathin TiN films Applied Physics Letters. 78: 2223-2225. DOI: 10.1063/1.1360235 |
0.307 |
|
| 2001 |
Longo DM, Benson WE, Chraska T, Hull R. Deep submicron microcontact printing on planar and curved substrates utilizing focused ion beam fabricated printheads Applied Physics Letters. 78: 981-983. DOI: 10.1063/1.1348308 |
0.345 |
|
| 2001 |
Dunn DN, Hull R, Ross FM, Tromp RM. Texture transformations in reactive metal films deposited upon amorphous substrates Journal of Applied Physics. 89: 2635-2640. DOI: 10.1063/1.1337078 |
0.339 |
|
| 2001 |
Hull R, Dunn D, Kubis A. Nanoscale Tomographic Imaging using Focused Ion Beam Sputtering, Secondary Electron Imaging and Secondary Ion Mass Spectrometry Microscopy and Microanalysis. 7: 934-935. DOI: 10.1017/S1431927600030749 |
0.304 |
|
| 2000 |
Stach EA, Schwarz KW, Hull R, Ross FM, Tromp RM. New mechanism for dislocation blocking in strained layer epitaxial growth Physical Review Letters. 84: 947-950. PMID 11017412 DOI: 10.1103/Physrevlett.84.947 |
0.642 |
|
| 2000 |
Chraska T, Cabral M, Mesarovic S, Longo D, Stach E, Bean J, Hull R. Development of Induced Crystallization as a Pattern Transfer Mechanism for Nanofabrication Mrs Proceedings. 636. DOI: 10.1557/Proc-636-D6.2.1 |
0.592 |
|
| 2000 |
Stach EA, Hull R, Tromp RM, Ross FM, Reuter MC, Bean JC. In-situtransmission electron microscopy studies of the interaction between dislocations in strained SiGe/Si (001) heterostructures Philosophical Magazine A. 80: 2159-2200. DOI: 10.1080/01418610008212156 |
0.691 |
|
| 2000 |
Demarest J, Hull R, Schonenberg KT, Janssens KGF. Nanoscale characterization of stresses in semiconductor devices by quantitative electron diffraction Applied Physics Letters. 77: 412-414. DOI: 10.1063/1.126993 |
0.333 |
|
| 2000 |
Young JL, Kuhlmann-Wilsdorf D, Hull R. The generation of mechanically mixed layers (MMLs) during sliding contact and the effects of lubricant thereon Wear. 246: 74-90. DOI: 10.1016/S0043-1648(00)00456-7 |
0.367 |
|
| 1999 |
Windt DL, Torre JD, Gilmer GH, Sapjeta J, Kalyanaraman R, Baumann FH, O'Sullivan PL, Dunn D, Hull R. Growth and Structure of Metallic Barrie Laye and Interconnect Films I: Exeriments Mrs Proceedings. 564: 307. DOI: 10.1557/Proc-564-307 |
0.324 |
|
| 1999 |
Dunn DN, Hull R. Reconstruction of three-dimensional chemistry and geometry using focused ion beam microscopy Applied Physics Letters. 75: 3414-3416. DOI: 10.1063/1.125311 |
0.31 |
|
| 1999 |
Hull R, Dunn D, Demarest J, Mathes DT. New Transmission Electron Microscope Characterization Techniques from Precision Focused Ion Beam Membranes Microscopy and Microanalysis. 5: 886-887. DOI: 10.1017/S143192760001775X |
0.32 |
|
| 1999 |
Xu J, Towe E, Yuan Q, Hull R. Beryllium doping and silicon amphotericity in (1 1 0) GaAs-based heterostructures: structural and optical properties Journal of Crystal Growth. 196: 26-32. DOI: 10.1016/S0022-0248(98)00871-9 |
0.351 |
|
| 1999 |
Hull R, Stach EA, Tromp R, Ross F, Reuter M. Interactions of Moving Dislocations in Semiconductors with Point, Line and Planar Defects Physica Status Solidi (a). 171: 133-146. DOI: 10.1002/(Sici)1521-396X(199901)171:1<133::Aid-Pssa133>3.0.Co;2-D |
0.646 |
|
| 1998 |
Hull R, Demarest J, Dunn D, Stach EA, Yuan Q. Applications of Ion Microscopy and In Situ Electron Microscopy to the Study of Electronic Materials and Devices Microscopy and Microanalysis. 4: 308-316. PMID 9767668 DOI: 10.1017/S143192769898031X |
0.624 |
|
| 1998 |
Stach EA, Hull R, Bean JC, Jones KS, Nejim A. In Situ Studies of the Interaction of Dislocations with Point Defects during Annealing of Ion Implanted Si/SiGe/Si (001) Heterostructures. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 4: 294-307. PMID 9767667 DOI: 10.1017/S1431927698980308 |
0.768 |
|
| 1998 |
Stach EA, Hull R, Tromp RM, ROSS FM, Reuter MC, Bean JC. Quantitative Experimental Determination of The Effect of Dislocation - Dislocation Interactions on Strain Relaxation in Lattice Mismatched Heterostructures Mrs Proceedings. 535. DOI: 10.1557/Proc-535-15 |
0.684 |
|
| 1998 |
Hull R, Dunn D. New Techniques for the Nanostructural Characterization of Semiconductor Materials and Devices Using Combined Focused Ion Beam and Transmission Electron Microscopy Techniques Mrs Proceedings. 523: 141. DOI: 10.1557/Proc-523-141 |
0.344 |
|
| 1998 |
Stach EA, Hull R, Tromp RM, Reuter MC, Copel M, LeGoues FK, Bean JC. Effect of the surface upon misfit dislocation velocities during the growth and annealing of SiGe/Si (001) heterostructures Journal of Applied Physics. 83: 1931-1937. DOI: 10.1063/1.366984 |
0.668 |
|
| 1998 |
Dries JC, Gokhale MR, Thomson KJ, Forrest SR, Hull R. Strain compensated In1-xGaxAs(x<0.47) quantum well photodiodes for extended wavelength operation Applied Physics Letters. 73: 2263-2265. DOI: 10.1063/1.121696 |
0.358 |
|
| 1998 |
Bergman AA, Buijs J, Herbig J, Mathes DT, Demarest JJ, Wilson CD, Reimann CT, Baragiola RA, Hull R, Oscarsson SO. Nanometer-scale arrangement of human serum albumin by adsorption on defect arrays created with a finely focused ion beam Langmuir. 14: 6785-6788. DOI: 10.1021/La980642O |
0.344 |
|
| 1997 |
Lanzerotti LD, Sturm JC, Stach E, Hull R, Buyuklimanli T, Magee C. Suppression of Boron Transient Enhanced Diffusion in SiGe HBTs by Carbon Incorporation Mrs Proceedings. 469. DOI: 10.1557/Proc-469-297 |
0.562 |
|
| 1997 |
Lanzerotti LD, Sturm JC, Stach E, Hull R, Buyuklimanli T, Magee C. Suppression of boron transient enhanced diffusion in SiGe heterojunction bipolar transistors by carbon incorporation Applied Physics Letters. 70: 3125-3127. DOI: 10.1063/1.119110 |
0.612 |
|
| 1997 |
Islam MR, Dupuis RD, Holmes AL, Curtis AP, Gardner NF, Stillman GE, Baker JE, Hull R. Luminescence characteristics of InAlP-InGaP heterostructures having native-oxide windows Journal of Crystal Growth. 170: 413-417. DOI: 10.1016/S0022-0248(96)00587-8 |
0.346 |
|
| 1996 |
Bi WG, Mei XB, Kavanagh KL, Tu CW, Stach EA, Hull R. A Study of Low-Temperature Grown Gap by Gas-Source Molecular Beam Epitaxy Mrs Proceedings. 421. DOI: 10.1557/Proc-421-293 |
0.632 |
|
| 1996 |
Hull R, Stach EA. Equilibrium and metastable strained layer semiconductor heterostructures Current Opinion in Solid State and Materials Science. 1: 21-28. DOI: 10.1016/S1359-0286(96)80005-2 |
0.631 |
|
| 1996 |
Hull R. Microstructural evaluation of optical materials and devices using a combination of focused ion beam sputtering and transmission electron microscopy Optical Materials. 6: 1-11. DOI: 10.1016/0925-3467(96)00023-7 |
0.358 |
|
| 1995 |
Janssens KGF, Biest OVd, Vanheliemont J, Maes HE, Hull R, Bean JC. Localised strain characterisation in semiconductor structures using electron diffraction contrast imaging Materials Science and Technology. 11: 66-71. DOI: 10.1179/Mst.1995.11.1.66 |
0.453 |
|
| 1995 |
Snyder CW, Frei MR, Bahnck D, Hopkins L, Hull R, Harriott L, Chiu TY, Fullowan T, Tseng B. Combining transmission electron microscopy with focused ion beam sputtering for microstructural investigations of AlGaAs/GaAs heterojunction bipolar transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1514-1518. DOI: 10.1116/1.588179 |
0.385 |
|
| 1995 |
Snyder CW, Lee JW, Hull R, Logan RA. Catastrophic degradation lines at the facet of InGaAsP/InP lasers investigated by transmission electron microscopy Applied Physics Letters. 67: 488-490. DOI: 10.1063/1.114545 |
0.336 |
|
| 1995 |
Janssens KGF, Biest OVd, Vanhellemont J, Maes HE, Hull R. Characterization of strain in an advanced semiconductor laser structure with nanometer range resolution using a new algorithm for electron diffraction contrast imaging interpretation Applied Physics Letters. 67: 1530-1532. DOI: 10.1063/1.114482 |
0.35 |
|
| 1995 |
Hull R, Stevie FA, Bahnck D. Observation of strong contrast from doping variations in transmission electron microscopy of InP‐based semiconductor laser diodes Applied Physics Letters. 66: 341-343. DOI: 10.1063/1.114206 |
0.379 |
|
| 1995 |
Eaglesham DJ, Hull R. Island formation in Ge/Si epitaxy Materials Science and Engineering B-Advanced Functional Solid-State Materials. 30: 197-200. DOI: 10.1016/0921-5107(94)09014-9 |
0.381 |
|
| 1995 |
Cotta M, Hamm R, Chu S, Hull R, Harriott L, Temkin H. Kinetic roughness in epitaxy (experimental) Materials Science and Engineering: B. 30: 137-142. DOI: 10.1016/0921-5107(94)09008-4 |
0.32 |
|
| 1995 |
Wegscheider W, Pfeiffer LN, Pinczuk A, West KW, Dignam MM, Hull R, Leibenguth RE. GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth Journal of Crystal Growth. 150: 285-292. DOI: 10.1016/0022-0248(95)80222-X |
0.302 |
|
| 1995 |
Chand N, Johnson JE, Osenbach JW, Liang WC, Feldman LC, Tsang WT, Krautter HW, Passlack M, Hull R, Swaminathan V. Molecular beam deposition of high quality silicon oxide dielectric films Journal of Crystal Growth. 148: 336-344. DOI: 10.1016/0022-0248(94)00729-2 |
0.319 |
|
| 1995 |
Stevie FA, Shane TC, Kahora PM, Hull R, Bahnck D, Kannan VC, David E. Applications of focused ion beams in microelectronics production, design and development Surface and Interface Analysis. 23: 61-68. DOI: 10.1002/Sia.740230204 |
0.382 |
|
| 1994 |
Hull R, Bean J. In Situ Observations of Misfit Dislocations in Lattice-Mismatched Epitaxial Semiconductor Heterostructures Mrs Bulletin. 19: 32-37. DOI: 10.1557/S0883769400036721 |
0.403 |
|
| 1994 |
Hull R, Bean JC, Peticolas LJ, Weir BE, Prabhakaran K, Ogino T. Misfit dislocation propagation kinetics in GexSi 1-x/Ge(100) heterostructures Applied Physics Letters. 65: 327-329. DOI: 10.1063/1.113023 |
0.504 |
|
| 1994 |
McCartney MR, Smith DJ, Hull R, Bean JC, Voelkl E, Frost B. Direct observation of potential distribution across Si/Sip‐njunctions using off‐axis electron holography Applied Physics Letters. 65: 2603-2605. DOI: 10.1063/1.112581 |
0.462 |
|
| 1994 |
Prabhakarana K, Ogino T, Hull R, Bean JC, Peticolas LJ. An efficient method for cleaning Ge(100) surface Surface Science. 316. DOI: 10.1016/0039-6028(94)91117-7 |
0.449 |
|
| 1993 |
Hull R, Bean JC, Logan RA. Misfit Dislocations in Strained Layer Epitaxy Solid State Phenomena. 417-432. DOI: 10.4028/Www.Scientific.Net/Ssp.32-33.417 |
0.466 |
|
| 1993 |
Ross FM, Kola RR, Hull R, Bean JC. Microstructural Evolution and Stress Relaxation in Sputtered Tungsten Films Mrs Proceedings. 318: 697. DOI: 10.1557/Proc-318-697 |
0.406 |
|
| 1993 |
Bean JC, Peticolas LJ, Hull R, Windt DL, Kuchibhotla R, Campbell JC. Design and fabrication of asymmetric strained layer mirrors for optoelectronic applications Applied Physics Letters. 63: 444-446. DOI: 10.1063/1.110018 |
0.462 |
|
| 1993 |
Macaulay JM, Hull R, Jalali B, Magee C. Characterization of arsenic doping profile across the polycrystalline Si/Si interface in polycrystalline Si emitter bipolar transistors Applied Physics Letters. 63: 1258-1260. DOI: 10.1063/1.109761 |
0.413 |
|
| 1993 |
Hull R, Logan RA, Weir BE, Vandenberg JM. Misfit dislocation microstructure and kinetics for InxGa1−xAs/InP(100) and (110) interfaces under tensile and compressive stress Applied Physics Letters. 63: 1504-1506. DOI: 10.1063/1.109670 |
0.333 |
|
| 1993 |
Kuchibhotla R, Campbell JC, Bean JC, Peticolas L, Hull R. Ge0.2Si0.8/Si Bragg‐reflector mirrors for optoelectronic device applications Applied Physics Letters. 62: 2215-2217. DOI: 10.1063/1.109420 |
0.487 |
|
| 1993 |
Hull R, Bahnck D, Stevie FA, Koszi LA, Chu SNG. Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering Applied Physics Letters. 62: 3408-3410. DOI: 10.1063/1.109032 |
0.335 |
|
| 1993 |
Ross FM, Hull R, Bahnck D, Bean JC, Peticolas LJ, King CA. Changes in electrical device characteristics during the in situ formation of dislocations Applied Physics Letters. 62: 1426-1428. DOI: 10.1063/1.108649 |
0.441 |
|
| 1993 |
Malik RJ, Nagle J, Micovic M, Ryan RW, Harris T, Geva M, Hopkins LC, Vandenberg J, Hull R, Kopf RF, Anand Y, Braddock WD. Properties and applications of carbon-doped GaAs and AlxGa1-xAs layers grown by MBE with a pyrolytic graphite filament Journal of Crystal Growth. 127: 686-689. DOI: 10.1016/0022-0248(93)90711-5 |
0.323 |
|
| 1993 |
Hull R, Bean JC. New insights into the microscopic motion of dislocations in covalently bonded semiconductors by in‐situ transmission electron microscope observations of misfit dislocations in thin strained epitaxial layers Physica Status Solidi (a). 138: 533-546. DOI: 10.1002/Pssa.2211380222 |
0.523 |
|
| 1992 |
Ross FM, Hull R, Bahnck D, Bean JC, Peticolas LJ, Kola RR, King CA. Changes in Electronic Device Properties During the Formation of Dislocations Mrs Proceedings. 280. DOI: 10.1557/Proc-280-483 |
0.33 |
|
| 1992 |
Hull R, Bean JC, Weir B, Peticolas LJ, Bahnck D, Feldman LC. Strain Relief Mechanisms in The Growth of Ge x Si 1−x /Si(110) Heterostructures Mrs Proceedings. 263: 403. DOI: 10.1557/Proc-263-403 |
0.5 |
|
| 1992 |
Ross FM, Hull R, Bahnck D, Bean JC, Peticolas J, Hamm RA, Huggins HA. In situ transmission electron microscopy measurements of the electrical and structural properties of strained layer GeSi/Si p–n junctions Journal of Vacuum Science & Technology B. 10: 2008-2012. DOI: 10.1116/1.586176 |
0.508 |
|
| 1992 |
Hull R, Bean JC. Misfit dislocations in lattice-mismatched epitaxial films Critical Reviews in Solid State and Materials Sciences. 17: 507-546. DOI: 10.1080/10408439208244585 |
0.483 |
|
| 1992 |
Freund LB, Hull R. On the Dodson–Tsao excess stress for glide of a threading dislocation in a strained epitaxial layer Journal of Applied Physics. 71: 2054-2056. DOI: 10.1063/1.351154 |
0.355 |
|
| 1992 |
Windt DL, Hull R, Waskiewicz WK. Interface imperfections in metal/Si multilayers Journal of Applied Physics. 71: 2675-2678. DOI: 10.1063/1.351040 |
0.409 |
|
| 1992 |
Hull R, Bean JC, Peticolas LJ, Bahnck D, Weir BE, Feldman LC. Quantitative analysis of strain relaxation in GexSi1−x/Si(110) heterostructures and an accurate determination of stacking fault energy in GexSi1−x alloys Applied Physics Letters. 61: 2802-2804. DOI: 10.1063/1.108068 |
0.463 |
|
| 1992 |
Bonar JM, Hull R, Walker JF, Malik R. Observations of new misfit dislocation configurations and slip systems at ultrahigh stresses in the (Al)GaAs/InxGa1−xAs/GaAs(100) system Applied Physics Letters. 60: 1327-1329. DOI: 10.1063/1.107332 |
0.405 |
|
| 1992 |
Hull R, Bean JC, Higashi GS, Green ML, Peticolas L, Bahnck D, Brasen D. Improvement in heteroepitaxial film quality by a novel substrate patterning geometry Applied Physics Letters. 60: 1468-1470. DOI: 10.1063/1.107273 |
0.471 |
|
| 1992 |
Kola RR, Windt DL, Waskiewicz WK, Weir BE, Hull R, Celler GK, Volkert CA. Stress relaxation in Mo/Si multilayer structures Applied Physics Letters. 60: 3120-3122. DOI: 10.1063/1.106771 |
0.379 |
|
| 1992 |
Bean JC, Hull R. Misfit dislocations in strained layer epitaxy: II. Kinetics Scripta Metallurgica Et Materialia. 27: 663-667. DOI: 10.1016/0956-716X(92)90485-W |
0.448 |
|
| 1992 |
Hull R, Bean JC. Misfit dislocations in strained layer epitaxy: I. Energetics Scripta Metallurgica Et Materialia. 27: 657-662. DOI: 10.1016/0956-716X(92)90484-V |
0.467 |
|
| 1992 |
White AE, Short KT, Hsieh YF, Hull R. Evolution of buried compound layers formed by ion implantation Materials Science and Engineering B. 12: 107-114. DOI: 10.1016/0921-5107(92)90268-E |
0.359 |
|
| 1991 |
Bahnck D, Hull R. Reduced Amorphization of Ion-Milled Silicon Cross-Section Transmission Electron Microscope Samples by Dynamic Annealing During Milling. Mrs Proceedings. 254. DOI: 10.1557/Proc-254-249 |
0.348 |
|
| 1991 |
Hull R, Bean JC, Ross F, Bahnck D, Pencolas LJ. The Roles of Stress, Geometry and Orientation on Misfit Dislocations Kinetics and Energetics in Epitaxial Strained Layers. Mrs Proceedings. 239. DOI: 10.1557/Proc-239-379 |
0.501 |
|
| 1991 |
Hull R, Bean JC, Peticolas L, Xie YH, Hsieh YF. Growth of GexSi1−X/Si Alloys on Si (100), (110) and (111) Surfaces Mrs Proceedings. 220. DOI: 10.1557/Proc-220-153 |
0.45 |
|
| 1991 |
Hsieh YF, Hull R, White AE, Short KT. Coalescence of buried CoSi2 layers formed by mesotaxy in Si(111) Journal of Applied Physics. 70: 7354-7361. DOI: 10.1063/1.349729 |
0.355 |
|
| 1991 |
Hull R, Bean JC, Bahnck D, Peticolas LJ, Short KT, Unterwald FC. Interpretation of dislocation propagation velocities in strained GexSi1−x/Si(100) heterostructures by the diffusive kink pair model Journal of Applied Physics. 70: 2052-2065. DOI: 10.1063/1.349440 |
0.483 |
|
| 1991 |
Hull R, Bean JC, Peticolas L, Bahnck D. Growth of GexSi1−x alloys on Si(110) surfaces Applied Physics Letters. 59: 964-966. DOI: 10.1063/1.106316 |
0.495 |
|
| 1991 |
Hull R, Bean JC, Noble D, Hoyt J, Gibbons JF. Dependence of misfit dislocation velocities upon growth technique and oxygen content in strained GexSi1-x/Si(100) heterostructures Applied Physics Letters. 59: 1585-1587. DOI: 10.1063/1.106292 |
0.482 |
|
| 1991 |
Hull R, Hsieh YF, White AE, Short KT. Interfacial structure and its effect on nucleation and growth energetics in mesotaxial Si/CoSi2/Si structures Applied Physics Letters. 59: 3467-3469. DOI: 10.1063/1.105655 |
0.379 |
|
| 1991 |
Jalali B, King CA, Higashi GS, Bean JC, Hull R, Hsieh YF, Macaulay J, Poate JM. Current gain enhancement in bipolar transistors by low-energy ion beam modification of the polycrystalline silicon emitter Applied Physics Letters. 58: 2009-2011. DOI: 10.1063/1.105023 |
0.435 |
|
| 1991 |
Hsieh YF, Hull R, White AE, Short KT. Formation of cobalt silicide in Co+ implanted Si(111) Applied Physics Letters. 58: 122-124. DOI: 10.1063/1.104947 |
0.358 |
|
| 1991 |
White AE, Short KT, Maex K, Hull R, Hsieh Y, Audet SA, Goossen KW, Jacobson DC, Poate JM. Exploiting Si/CoSi2/Si heterostructures grown by mesotaxy Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 59: 693-697. DOI: 10.1016/0168-583X(91)95305-W |
0.417 |
|
| 1991 |
Volkert CA, Fitzgerald EA, Hull R, Xie YH, Mii YJ. Strain relaxation in Ge0.09Si0.91 epitaxial thin films measured by wafer curvature Journal of Electronic Materials. 20: 833-837. DOI: 10.1007/Bf02665972 |
0.421 |
|
| 1991 |
Hull R, Bean JC. Dynamic observations of relaxation processes in semiconductor heterostructures Advanced Materials. 3: 139-147. DOI: 10.1002/Adma.19910030304 |
0.355 |
|
| 1990 |
Hsieh Y, Hull R, White AE, Short KT. Evolution of Buried Cobalt Silicide Layers Formed by Co Implantation in Si(111) Mrs Proceedings. 202. DOI: 10.1557/Proc-202-665 |
0.365 |
|
| 1990 |
Hull R, Bean JC, Bonar JM, Peticolas L. Strain Relaxation Mechanisms in Lattice Mismatched Epitaxy Mrs Proceedings. 198. DOI: 10.1557/Proc-198-459 |
0.478 |
|
| 1990 |
Hull R, Hsieh YF, Short KT, White AE, Cherns D. Interface Structure and Layer Synthesis Modes in Mesotaxial Si/CoSi2/Si Structures Mrs Proceedings. 183. DOI: 10.1557/Proc-183-91 |
0.362 |
|
| 1990 |
Maex K, White AE, Short KT, Hsieh Y, Hull R, Osenbach JW, Praefcke HC. Amorphization and regrowth in Si/CoSi2/Si heterostructures Journal of Applied Physics. 68: 5641-5647. DOI: 10.1063/1.346977 |
0.374 |
|
| 1990 |
Hull R, White AE, Short KT, Bonar JM. Formation of continuous CoSi2 layers by high Co dose implantation into Si(100) Journal of Applied Physics. 68: 1629-1634. DOI: 10.1063/1.346643 |
0.352 |
|
| 1990 |
Vandenberg JM, White AE, Hull R, Short KT, Yalisove SM. Anisotropic strain relaxation in buried CoSi2 layers formed by mesotaxy Journal of Applied Physics. 67: 787-791. DOI: 10.1063/1.345732 |
0.376 |
|
| 1990 |
Chand N, Ren F, Macrander AT, Ziel JPvd, Sergent AM, Hull R, Chu SNG, Chen YK, Lang DV. GaAs‐on‐Si: Improved growth conditions, properties of undoped GaAs, high mobility, and fabrication of high‐performance AlGaAs/GaAs selectively doped heterostructure transistors and ring oscillators Journal of Applied Physics. 67: 2343-2353. DOI: 10.1063/1.345529 |
0.416 |
|
| 1990 |
Hsieh Y, Siegal MP, Hull R, Phillips JM. Microstructure of epitaxial YBa2Cu3O7−x thin films grown on LaAlO3 (001) Applied Physics Letters. 57: 2268-2270. DOI: 10.1063/1.104165 |
0.35 |
|
| 1990 |
Hull R, Bean JC, Bonar JM, Higashi GS, Short KT, Temkin H, White AE. Enhanced strain relaxation in Si/GexSi1-x/Si heterostructures via point-defect concentrations introduced by ion implantation Applied Physics Letters. 56: 2445-2447. DOI: 10.1063/1.102904 |
0.523 |
|
| 1989 |
Pearsall TP, Vandenberg JM, Hull R, Bonar JM. Structure and optical properties of strained Ge-Si superlattices grown on (001) Ge. Physical Review Letters. 63: 2104-2107. PMID 10040763 DOI: 10.1103/Physrevlett.63.2104 |
0.308 |
|
| 1989 |
Hull R, Bean JC, Werder DJ, Leibenguth RE. Activation barriers to strain relaxation in lattice-mismatched epitaxy. Physical Review. B, Condensed Matter. 40: 1681-1684. PMID 9992025 DOI: 10.1103/Physrevb.40.1681 |
0.515 |
|
| 1989 |
Hull R, Bean JC. Kinetic Barriers to Strain Relaxation in Ge x Si 1-x /Si Epitaxy Mrs Proceedings. 160: 23. DOI: 10.1557/Proc-160-23 |
0.472 |
|
| 1989 |
Bonar JM, Hull R, Malik RJ, Ryan RW, Walker JF. Structural and Electronic Properties of GaAs/InGaAs/GaAs Heterostructures Mrs Proceedings. 160. DOI: 10.1557/Proc-160-117 |
0.382 |
|
| 1989 |
Hull R, Bean JC. Nucleation of misfit dislocations in strained-layer epitaxy in the GexSi1−x/Si system Journal of Vacuum Science and Technology. 7: 2580-2585. DOI: 10.1116/1.575800 |
0.497 |
|
| 1989 |
Pearsall TP, Vandenberg JM, Hull R, Bonar JM. Erratum: Structure and optical properties of strained Ge-Si superlattices grown on (001) Ge [Phys. Rev. Lett. 63, 2104 (1989)] Physical Review Letters. 63: 2696. DOI: 10.1103/Physrevlett.63.2696 |
0.402 |
|
| 1989 |
Grundmann M, Christen J, Bimberg D, Fischer‐Colbrie A, Hull R. Misfit dislocations in pseudomorphic In0.23Ga0.77As/GaAs quantum wells: Influence on lifetime and diffusion of excess excitons Journal of Applied Physics. 66: 2214-2216. DOI: 10.1063/1.344288 |
0.331 |
|
| 1989 |
Hull R, Bean JC, Buescher C. A phenomenological description of strain relaxation in GexSi1−x/Si(100) heterostructures Journal of Applied Physics. 66: 5837-5843. DOI: 10.1063/1.343604 |
0.486 |
|
| 1989 |
Hull R, Bean JC, Leibenguth RE, Werder DJ. Role of strained layer superlattices in misfit dislocation reduction in growth of epitaxial Ge0.5Si0.5 alloys on Si(100) substrates Journal of Applied Physics. 65: 4723-4729. DOI: 10.1063/1.343223 |
0.546 |
|
| 1989 |
Bimberg D, Oertel D, Hull R, Reid GA, Carey KW. Detailed atomic scale structure of AlInAs/GaInAs quantum wells Journal of Applied Physics. 65: 2688-2692. DOI: 10.1063/1.342753 |
0.329 |
|
| 1989 |
Hull R, Bean JC. Thermal stability of Si/GexSi1−x/Si heterostructures Applied Physics Letters. 55: 1900-1902. DOI: 10.1063/1.102165 |
0.491 |
|
| 1989 |
Wolff SH, Wagner S, Bean JC, Hull R, Gibson JM. Hydrogen surface coverage: Raising the silicon epitaxial growth temperature Applied Physics Letters. 55: 2017-2019. DOI: 10.1063/1.102149 |
0.452 |
|
| 1989 |
Hull R, Bean JC. Variation in misfit dislocation behavior as a function of strain in the GeSi/Si system Applied Physics Letters. 54: 925-927. DOI: 10.1063/1.100810 |
0.509 |
|
| 1989 |
White AE, Short KT, Dynes RC, Hull R, Vandenberg JM. Mesotaxy: Synthesis of buried single-crystal silicide layers by implantation Nuclear Inst. and Methods in Physics Research, B. 39: 253-258. DOI: 10.1016/0168-583X(89)90782-9 |
0.409 |
|
| 1989 |
Hull R, Bean JC, Eaglesham DJ, Bonar JM, Buescher C. Strain relaxation phenomena in GexSi1−x/Si strained structures Thin Solid Films. 183: 117-132. DOI: 10.1016/0040-6090(89)90437-9 |
0.538 |
|
| 1989 |
Pearsall TP, Hull R, Bean JC, Bonar JM. Optical properties of strained Ge-Si superlattices grown on (001)Ge Thin Solid Films. 183: 9-16. DOI: 10.1016/0040-6090(89)90424-0 |
0.494 |
|
| 1988 |
Hull R, Bean JC, Leibenguth RE. Propagation of Dislocations Through GeSi/Si Strained Layers and Superlattices Mrs Proceedings. 116. DOI: 10.1557/Proc-116-505 |
0.505 |
|
| 1988 |
Koch SM, Hull R, Rosner SJ, Harris JS. GaAs/Si Nucleation and Buffer Layer Growth Mrs Proceedings. 116. DOI: 10.1557/Proc-116-111 |
0.396 |
|
| 1988 |
Fischer‐Colbrie A, Miller JN, Laderman SS, Rosner SJ, Hull R. Growth and characterization of AlGaAs/InGaAs/GaAs pseudomorphic structures Journal of Vacuum Science & Technology B. 6: 620-624. DOI: 10.1116/1.584415 |
0.386 |
|
| 1988 |
Drowley CI, Reid GA, Hull R. Model for facet and sidewall defect formation during selective epitaxial growth of (001) silicon Applied Physics Letters. 52: 546-548. DOI: 10.1063/1.99412 |
0.361 |
|
| 1988 |
Vandenberg JM, Bean JC, Hamm RA, Hull R. Kinematical simulation of high‐resolution x‐ray diffraction curves of GexSi1−x/Si strained‐layer superlattices: A structural assessment Applied Physics Letters. 52: 1152-1154. DOI: 10.1063/1.99189 |
0.492 |
|
| 1988 |
Hull R, Bean JC, Werder DJ, Leibenguth RE. In situ observations of misfit dislocation propagation in GexSi1−x/Si(100) heterostructures Applied Physics Letters. 52: 1605-1607. DOI: 10.1063/1.99055 |
0.523 |
|
| 1987 |
Hull R, Fischer-Colbrie A, Rosner SJ, Koch SM, Harris JS. Nucleation of Gaas on Vicinal Si(100) Surfaces Mrs Proceedings. 94. DOI: 10.1557/Proc-94-25 |
0.334 |
|
| 1987 |
Lin TL, Sadwick L, Wang KL, Rhee SS, Kao YC, Hull R, Nieh CW, Jamieson DN, Liu JK, Nicolet M. MBE Growth of GaAs on Porous Silicon Mrs Proceedings. 91. DOI: 10.1557/Proc-91-113 |
0.346 |
|
| 1987 |
Hull R, Bean JC, Chand N, Leibenguth RE, Bahnck D, Koch SM, Harris JS. Heteronucleation onto Si Surfaces Mrs Proceedings. 102. DOI: 10.1557/Proc-102-455 |
0.451 |
|
| 1987 |
White AE, Short KT, Dynes RC, Gibson JM, Hull R. Synthesis of Buried Silicon Compounds Using Ion Implantation Mrs Proceedings. 100. DOI: 10.1557/Proc-100-3 |
0.381 |
|
| 1987 |
Kao YC, Wang KL, Fresart Ed, Hull R, Bai G, Jamieson D, Nicolet MA. Study of CoSi2/Si strained layers grown by molecular beam epitaxy Journal of Vacuum Science & Technology B. 5: 745-748. DOI: 10.1116/1.583781 |
0.442 |
|
| 1987 |
Lin TL, Sadwick L, Wang KL, Kao YC, Hull R, Nieh CW, Jamieson DN, Liu JK. Growth and characterization of molecular beam epitaxial GaAs layers on porous silicon Applied Physics Letters. 51: 814-816. DOI: 10.1063/1.98821 |
0.398 |
|
| 1987 |
Carey KW, Hull R, Fouquet JE, Kellert FG, Trott GR. Structural and photoluminescent properties of GaInAs quantum wells with InP barriers grown by organometallic vapor phase epitaxy Applied Physics Letters. 51: 910-912. DOI: 10.1063/1.98798 |
0.313 |
|
| 1987 |
Hull R, Fischer-Colbrie A, Rosner SJ, Koch SM, Harris JS. Effect of substrate surface structure on nucleation of GaAs on Si(100) Applied Physics Letters. 51: 1723-1725. DOI: 10.1063/1.98556 |
0.385 |
|
| 1987 |
Hull R, Fischer‐Colbrie A. Nucleation of GaAs on Si: Experimental evidence for a three‐dimensional critical transition Applied Physics Letters. 50: 851-853. DOI: 10.1063/1.98011 |
0.442 |
|
| 1987 |
Gronet CM, King CA, Opyd W, Gibbons JF, Wilson SD, Hull R. Growth of GeSi/Si strained‐layer superlattices using limited reaction processing Journal of Applied Physics. 61: 2407-2409. DOI: 10.1063/1.337960 |
0.426 |
|
| 1987 |
Juhl A, Oertel D, Maczey C, Bimberg D, Carey K, Hull R, Reid GA. Correlation of optical spectra and atomic scale structure of AlInAs GaInAs quantum wells Superlattices and Microstructures. 3: 205-209. DOI: 10.1016/0749-6036(87)90059-0 |
0.324 |
|
| 1987 |
Koch SM, Rosner SJ, Hull R, Yoffe GW, Harris JS. The growth of GaAs on Si by MBE Journal of Crystal Growth. 81: 205-213. DOI: 10.1016/0022-0248(87)90392-7 |
0.44 |
|
| 1986 |
Hull R, Fischer-Colbrie A, Rosner S, Koch S, Harris J. Structural Studies of Nucleation and the Initial Stages of Growth of Epitaxial Gaas on Si(100) Substrates Mrs Proceedings. 82. DOI: 10.1557/Proc-82-355 |
0.468 |
|
| 1986 |
Hull R, Carey KW, Reid GA. Theoretical and Experimental Description of Interface Structure Mrs Proceedings. 77. DOI: 10.1557/Proc-77-455 |
0.374 |
|
| 1986 |
Gibbons JF, Gronet CM, Sturm JC, King C, Williams K, Wilson S, Reynolds S, Vook D, Scott M, Hull R, Nauka C, Turner J, Laderman S, Reid G. Limited Reaction Processing Mrs Proceedings. 74. DOI: 10.1557/Proc-74-629 |
0.336 |
|
| 1986 |
Hull R, Bean JC, Gibson JM, Joy DC, Twigg ME. Trapping of oxygen at homoepitaxial Si‐Si interfaces Applied Physics Letters. 49: 1287-1289. DOI: 10.1063/1.97388 |
0.488 |
|
| 1986 |
Hull R, Rosner SJ, Koch SM, Harris JS. Atomic structure of the GaAs/Si interface Applied Physics Letters. 49: 1714-1716. DOI: 10.1063/1.97224 |
0.407 |
|
| 1986 |
Hull R, Bean JC, Cerdeira F, Fiory AT, Gibson JM. Stability of semiconductor strained‐layer superlattices Applied Physics Letters. 48: 56-58. DOI: 10.1063/1.96761 |
0.513 |
|
| 1986 |
Pearton SJ, Hull R, Jacobson DC, Poate JM, Williams JS. Relationship between secondary defects and electrical activation in ion‐implanted, rapidly annealed GaAs Applied Physics Letters. 48: 38-40. DOI: 10.1063/1.96754 |
0.392 |
|
| 1986 |
Carey KW, Wang SY, Hull R, Turner JE, Oertel D, Bauer R, Bimberg D. Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high-speed p-i-n photodiodes Journal of Crystal Growth. 77: 558-563. DOI: 10.1016/0022-0248(86)90352-0 |
0.323 |
|
| 1985 |
Hull R, Twigg ME, Bean JC, Gibson JM, Joy DC. Trapping of Oxygen at Homoepitaxial Si-Si Interfaces Grown by Molecular Beam Epitaxy Mrs Proceedings. 59: 317. DOI: 10.1557/Proc-59-317 |
0.508 |
|
| 1985 |
Jacobson DC, Pearton SJ, Hull R, Poate JM, Williams JS. Damage Removal Processes in Ion Implanted, Rapidly Annealed GaAs Mrs Proceedings. 52. DOI: 10.1557/Proc-52-361 |
0.318 |
|
| 1985 |
Tamargo MC, Hull R, Greene LH, Hayes JR, Tabatabaie N, Cho AY. Structural Studies of an InAs-GaAs Superlattice Alloy Mrs Proceedings. 47. DOI: 10.1557/Proc-47-271 |
0.369 |
|
| 1985 |
Nygren E, Aziz MJ, Turnbull D, Poate JM, Jacobson DC, Hull R. Effect of pressure on the solid phase epitaxial regrowth rate of Si Applied Physics Letters. 47: 232-233. DOI: 10.1063/1.96228 |
0.356 |
|
| 1985 |
Hull R, Gibson JM, Bean JC. Structure imaging of commensurate GexSi1−x/Si(100) interfaces and superlattices Applied Physics Letters. 46: 179-181. DOI: 10.1063/1.95675 |
0.485 |
|
| 1985 |
Tamargo MC, Hull R, Greene L, Hayes JR, Cho AY. Growth of a novel InAs‐GaAs strained layer superlattice on InP Applied Physics Letters. 46: 569-571. DOI: 10.1063/1.95542 |
0.363 |
|
| 1985 |
Gibson JM, Hull R, Bean JC, Treacy MMJ. Elastic relaxation in transmission electron microscopy of strained‐layer superlattices Applied Physics Letters. 46: 649-651. DOI: 10.1063/1.95516 |
0.471 |
|
| 1985 |
Rossetti R, Hull R, Gibson JM, Brus LE. Hybrid electronic properties between the molecular and solid state limits: Lead sulfide and silver halide crystallites The Journal of Chemical Physics. 83: 1406-1410. DOI: 10.1063/1.449407 |
0.331 |
|
| 1985 |
Gibson JM, Tung RT, Phillips JM, Hull R. ATOMIC STRUCTURE AND PROPERTIES OF EPITAXIAL THIN-FILM SEMICONDUCTOR INTERFACES Le Journal De Physique Colloques. 46: C4-369-C4-377. DOI: 10.1051/Jphyscol:1985440 |
0.381 |
|
| 1984 |
Greene LH, Feldmann WL, Rowell JM, Batlogg B, Hull R, McWhan DB. Influence of Modulation Wavelength Induced Order on the Physical Properties of Nb/Rare Earth Superlattices Mrs Proceedings. 37: 523. DOI: 10.1557/Proc-37-523 |
0.355 |
|
| 1984 |
Gibson JM, Treacy MMJ, Hull R, Bean JC. Transmission Electron Microscopy of Strained-Layer Superlattices Mrs Proceedings. 37. DOI: 10.1557/Proc-37-267 |
0.5 |
|
| 1984 |
Hull R, Bean JC, Gibson JM, Marcantonio KJ, Fiory AT, Nakahara S. Interfacial Structure and Stability in Ge x Si 1−x /Si Strained Layers. Mrs Proceedings. 37: 261. DOI: 10.1557/Proc-37-261 |
0.494 |
|
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