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William R. Frensley - Publications

Affiliations: 
Electrical Engineering University of Texas at Dallas, Richardson, TX, United States 
Area:
Electronics and Electrical Engineering
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52 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Mir RN, Frensley WR, Shichijo S, Blakey PA. Computational technique for probing terminal control mechanisms inside three-dimensional nano-scale MOSFET Electronics Letters. 50: 833-835. DOI: 10.1049/el.2014.0910  0.706
2013 Mir RN, Frensley WR. Electrical design of InAs-Sb/GaSb superlattices for optical detectors using full bandstructure sp3s* tight-binding method and Bloch boundary conditions Journal of Applied Physics. 114. DOI: 10.1063/1.4824365  0.722
2012 Yang X, Frensley WR, Zhou D, Hu W. Performance analysis of Si nanowire biosensor by numerical modeling for charge sensing Ieee Transactions On Nanotechnology. 11: 501-512. DOI: 10.1109/Tnano.2011.2178101  0.311
2008 Asahara M, Campbell CF, Frensley WR. An in-depth, theoretical investigation into modeling metal-insulator-metal capacitors using symmetric coupled lines in a homogeneous medium model Ieee Microwave and Wireless Components Letters. 18: 37-39. DOI: 10.1109/Lmwc.2007.911989  0.56
2008 Frensley WR. Development of electronic device simulations for educational purposes Journal of Computational Electronics. 7: 494-499. DOI: 10.1007/S10825-008-0259-6  0.334
2007 Asahara M, Campbell CF, Frensley WR. A novel approach to modeling metal - insulator - metal capacitors over vias with significant electrical length Ieee Transactions On Microwave Theory and Techniques. 55: 709-714. DOI: 10.1109/Tmtt.2007.892810  0.571
2006 Asahara M, Campbell CF, Frensley WR. A generic, scalable model applicable to MIM capacitors of arbitrary electrical length Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 115-118. DOI: 10.1109/CSICS.2006.319916  0.541
2004 Loiko KV, Peidous IV, Frensley WR. Experimental study and simulation of stress-induced cavities in silicon Proceedings - Electrochemical Society. 5: 218-225.  0.76
2003 Rivas C, Lake R, Frensley WR, Klimeck G, Thompson PE, Hobart KD, Rommel SL, Berger PR. Full band modeling of the excess current in a delta-doped silicon tunnel diode Journal of Applied Physics. 94: 5005-5013. DOI: 10.1063/1.1606114  0.568
2002 Loiko KV, Peidous IV, Harrington TE, Frensley WR. Stress-induced redistribution of point defects in silicon device structures Solid State Phenomena. 82: 225-230. DOI: 10.4028/Www.Scientific.Net/Ssp.82-84.225  0.766
2002 Peidous IV, Loiko KV, Simpson DA, Frensley WR, Huff HR. The effect of intrinsic point defects upon dislocation motion in silicon Solid State Phenomena. 82: 219-224. DOI: 10.4028/Www.Scientific.Net/Ssp.82-84.219  0.757
2001 Peidous IV, Loiko KV, Simpson DA, La T, Frensley WR. Dislocation locking by intrinsic point defects in silicon Materials Research Society Symposium - Proceedings. 673. DOI: 10.1557/Proc-673-P3.9  0.762
2001 Rivas C, Lake R, Klimeck G, Frensley WR, Fischetti MV, Thompson PE, Rommel SL, Berger PR. Full-band simulation of indirect phonon assisted tunneling in a silicon tunnel diode with delta-doped contacts Applied Physics Letters. 78: 814-816. DOI: 10.1063/1.1343500  0.595
2000 Loiko KV, Nallapati G, Jarreau KM, Ekbote SS, Hensley RA, Simpson D, Harrington TE, Frensley WR, Peidous IV. The impact of point defects on stress-induced dislocation generation in silicon Materials Research Society Symposium - Proceedings. 610: B6.13.1-B6.13.6. DOI: 10.1557/Proc-610-B6.13  0.753
2000 Daniel ES, Cartoixà X, Frensley WR, Ting DZY, McGill TC. Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode Ieee Transactions On Electron Devices. 47: 1052-1060. DOI: 10.1109/16.841240  0.404
1998 Lake R, Klimeck G, Bowen RC, Jovanovic D, Sotirelis P, Frensley WR. A Generalized Tunneling Formula for Quantum Device Modeling Vlsi Design. 6: 9-12. DOI: 10.1155/1998/84503  0.351
1998 Klimeck G, Lake RK, Bowen RC, Fernando CL, Frensley WR. Resolution of Resonances in a General Purpose Quantum Device Simulator (NEMO) Vlsi Design. 6: 107-110. DOI: 10.1155/1998/43043  0.316
1998 Klimeck G, Blanks D, Lake R, Bowen RC, Fernando CL, Leng M, Frensley WR, Jovanovic D, Sotirelis P. Writing Research Software in a Large Group for the NEMO Project Vlsi Design. 8: 79-86. DOI: 10.1155/1998/35374  0.303
1997 Bowen RC, Klimeck G, Lake RK, Frensley WR, Moise T. Quantitative simulation of a resonant tunneling diode Journal of Applied Physics. 81: 3207-3213. DOI: 10.1063/1.364151  0.377
1996 Macks LD, Brown SA, Clark RG, Starrett RP, Reed MA, Deshpande MR, Fernando CJ, Frensley WR. Resonant tunneling in double-quantum-well triple-barrier heterostructures. Physical Review. B, Condensed Matter. 54: 4857-4862. PMID 9986446 DOI: 10.1103/Physrevb.54.4857  0.323
1995 Klimeck G, Lake R, Bowen RC, Frensley WR, Moise TS. Quantum device simulation with a generalized tunneling formula Applied Physics Letters. 67: 2539-2541. DOI: 10.1063/1.114451  0.34
1994 Hellums JR, Frensley WR. Non-Markovian open-system boundary conditions for the time-dependent Schrödinger equation. Physical Review. B, Condensed Matter. 49: 2904-2906. PMID 10011127 DOI: 10.1103/Physrevb.49.2904  0.704
1994 Deshpande MR, Hornbeck ES, Kozodoy P, Dekker NH, Sleight JW, Reed MA, Fernando CL, Frensley WR. Low-dimensional resonant tunnelling and Coulomb blockade: A comparison of fabricated versus impurity confinement Semiconductor Science and Technology. 9: 1919-1924. DOI: 10.1088/0268-1242/9/11S/011  0.34
1994 Frensley WR. Heterostructure and Quantum Well Physics Vlsi Electronics Microstructure Science. 24: 1-24. DOI: 10.1016/B978-0-12-234124-3.50006-9  0.352
1994 Macks LD, Brown SA, Starrett RP, Clark RG, Deshpande MR, Reed MA, Fernando CJL, Frensley WR, Matyi RJ. High magnetic field tunneling transport in a double quantum well-triple barrier resonant tunneling diode Physica B: Physics of Condensed Matter. 201: 374-379. DOI: 10.1016/0921-4526(94)91118-5  0.312
1991 Luscombe JH, Aggarwal R, Reed MA, Frensley WR, Luban M. Theory of the Fermi-level energy in semiconductor superlattices. Physical Review. B, Condensed Matter. 44: 5873-5876. PMID 9998432 DOI: 10.1103/Physrevb.44.5873  0.311
1991 Seabaugh A, Kao YC, Randall J, Frensley W, Khatibzadeh A. Room Temperature Hot Electron Transistors with InAs-Notched Resonant-Tunneling-Diode Injector Japanese Journal of Applied Physics. 30: 921-925. DOI: 10.1143/Jjap.30.921  0.332
1991 Seabaugh AC, Kao YC, Frensley WR, Randall JN, Reed MA. Resonant transmission in the base/collector junction of a bipolar quantum-well resonant-tunneling transistor Applied Physics Letters. 59: 3413-3415. DOI: 10.1063/1.105692  0.319
1991 Seabaugh AC, Kao YC, Liu HY, Luscombe JH, Tsai HL, Reed MA, Frensley WR. Formation of rotation-induced superlattices and their observation by tunneling spectroscopy Applied Physics Letters. 59: 570-572. DOI: 10.1063/1.105389  0.303
1990 Reed MA, Seabaugh AC, Kao Y, Randall JN, Frensley WR, Luscombe JH. Semiconductor Resonant Tunneling Device Physics and Applications Mrs Proceedings. 198: 309. DOI: 10.1557/Proc-198-309  0.324
1990 Frensley WR. Boundary conditions for open quantum systems driven far from equilibrium Reviews of Modern Physics. 62: 745-791. DOI: 10.1103/Revmodphys.62.745  0.318
1990 Luscombe JH, Frensley WR. Models for nanoelectronic devices Nanotechnology. 1: 131-140. DOI: 10.1088/0957-4484/1/2/002  0.325
1989 Seabaugh AC, Frensley WR, Randall JN, Reed MA, Farrington DL, Matyi RJ. Pseudomorphic Bipolar Quantum Resonant-Tunneling Transistor Ieee Transactions On Electron Devices. 36: 2328-2334. DOI: 10.1109/16.40918  0.342
1989 Seabaugh AC, Matyi RJ, Cabaniss GE, Frensley WR. Electrochemical C-V Profiling of Heterojunction Device Structures Ieee Transactions On Electron Devices. 36: 309-313. DOI: 10.1109/16.19930  0.341
1989 Reed MA, Frensley WR, Matyi RJ, Randall JN, Seabaugh AC. Realization of a three-terminal resonant tunneling device: The bipolar quantum resonant tunneling transistor Applied Physics Letters. 54: 1034-1036. DOI: 10.1063/1.101357  0.329
1989 Reed MA, Frensley WR, Duncan WM, Matyi RJ, Seabaugh AC, Tsai HL. Quantitative resonant tunneling spectroscopy: Current-voltage characteristics of precisely characterized resonant tunneling diodes Applied Physics Letters. 54: 1256-1258. DOI: 10.1063/1.101355  0.34
1989 Frensley WR. Effect of inelastic processes on the self-consistent potential in the resonant-tunneling diode Solid State Electronics. 32: 1235-1239. DOI: 10.1016/0038-1101(89)90220-7  0.351
1988 Frensley WR. Erratum: Wigner-function model of a resonant-tunneling semiconductor device Physical Review. B, Condensed Matter. 37: 10379. PMID 9944480 DOI: 10.1103/Physrevb.37.10379  0.327
1988 Frensley WR. Quantum transport calculation of the frequency response of resonant-tunneling heterostructure devices Superlattices and Microstructures. 4: 497-501. DOI: 10.1016/0749-6036(88)90225-X  0.348
1988 Frensley WR. Quantum transport modeling of resonant-tunneling devices Solid State Electronics. 31: 739-742. DOI: 10.1016/0038-1101(88)90378-4  0.338
1987 Frensley WR. Wigner-function model of a resonant-tunneling semiconductor device. Physical Review. B, Condensed Matter. 36: 1570-1580. PMID 9942989 DOI: 10.1103/Physrevb.36.1570  0.327
1987 Frensley WR. Gallium arsenide transistors Scientific American. 257: 80-87. DOI: 10.1038/Scientificamerican0887-80  0.314
1986 Reed MA, Bate RT, Bradshaw K, Duncan WM, Frensley WR, Lee JW, Shih HD. SPATIAL QUANTIZATION IN GaAs-AlGaAs MULTIPLE QUANTUM DOTS Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 4: 358-360. DOI: 10.1116/1.583331  0.309
1985 Frensley WR. Simulation of resonant-tunneling heterostructure devices Journal of Vacuum Science & Technology B. 3: 1261-1266. DOI: 10.1116/1.583009  0.351
1985 Frensley WR, Bayraktaroglu B, Campbell SE, Shih HD, Lehmann RE. Design and Fabrication of a GaAs Vertical MESFET Ieee Transactions On Electron Devices. 32: 952-956. DOI: 10.1109/T-Ed.1985.22052  0.328
1983 Frensley WR. An Analytic Model for the Barrier-Limited Mode of Operation of the Permeable Base Transistor Ieee Transactions On Electron Devices. 30: 1624-1628. DOI: 10.1109/T-Ed.1983.21422  0.343
1983 Frensley WR. Barrier-Limited Transport in Semiconductor Devices Ieee Transactions On Electron Devices. 30: 1619-1623. DOI: 10.1109/T-Ed.1983.21421  0.31
1982 McLevige WV, Morkoc H, Yuan HT, Drummond TJ, Duncan WM, Frensley WR, Doerbeck FH. GaAs/AlGaAs Heterojunction Bipolar Transistors for Integrated Circuit Applications Ieee Electron Device Letters. 3: 43-45. DOI: 10.1109/Edl.1982.25471  0.308
1981 Frensley WR. Power-Limiting Breakdown Effects in GaAs MESFET's Ieee Transactions On Electron Devices. 28: 962-970. DOI: 10.1109/T-Ed.1981.20467  0.327
1978 Frensley WR. THEORETICAL STUDY OF THE ORIENTATION DEPENDENCE OF HETEROJUNCTION ENERGY BAND LINEUPS J Vac Sci Technol. 15: 1465-1468. DOI: 10.1116/1.569809  0.309
1977 Frensley WR, Kroemer H. Theory of the energy-band lineup at an abrupt semiconductor heterojunction Physical Review B. 16: 2642-2652. DOI: 10.1103/Physrevb.16.2642  0.315
1976 Frensley WR, Kroemer H. Prediction of semiconductor heterojunction discontinuities from bulk band structures Journal of Vacuum Science and Technology. 13: 810-815. DOI: 10.1116/1.568995  0.301
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