Jack Washburn - Publications

Affiliations: 
Materials Science and Engineering University of California, Berkeley, Berkeley, CA 
Website:
https://www.mse.berkeley.edu/news/in-memoriam-professor-emeritus-jack-washburn

151 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Kim EH, Galchev VI, Kim JY, Misek SA, Stevenson TK, Campbell MD, Pagani FD, Day SM, Johnson TC, Washburn JG, Vikstrom KL, Michele DE, Misek DE, Westfall MV. Differential protein expression and basal lamina remodeling in human heart failure. Proteomics. Clinical Applications. PMID 26756417 DOI: 10.1002/Prca.201500099  0.32
2015 Gee HY, Zhang F, Ashraf S, Kohl S, Sadowski CE, Vega-Warner V, Zhou W, Lovric S, Fang H, Nettleton M, Zhu JY, Hoefele J, Weber LT, Podracka L, Boor A, ... ... Washburn J, et al. KANK deficiency leads to podocyte dysfunction and nephrotic syndrome. The Journal of Clinical Investigation. 125: 2375-84. PMID 25961457 DOI: 10.1172/Jci79504  0.32
2014 Gee HY, Ashraf S, Wan X, Vega-Warner V, Esteve-Rudd J, Lovric S, Fang H, Hurd TW, Sadowski CE, Allen SJ, Otto EA, Korkmaz E, Washburn J, Levy S, Williams DS, et al. Mutations in EMP2 cause childhood-onset nephrotic syndrome. American Journal of Human Genetics. 94: 884-90. PMID 24814193 DOI: 10.1016/J.Ajhg.2014.04.010  0.32
2014 Gee HY, Otto EA, Hurd TW, Ashraf S, Chaki M, Cluckey A, Vega-Warner V, Saisawat P, Diaz KA, Fang H, Kohl S, Allen SJ, Airik R, Zhou W, Ramaswami G, ... ... Washburn J, et al. Whole-exome resequencing distinguishes cystic kidney diseases from phenocopies in renal ciliopathies. Kidney International. 85: 880-7. PMID 24257694 DOI: 10.1038/Ki.2013.450  0.32
2013 Lehoczky JA, Thomas PE, Patrie KM, Owens KM, Villarreal LM, Galbraith K, Washburn J, Johnson CN, Gavino B, Borowsky AD, Millen KJ, Wakenight P, Law W, Van Keuren ML, Gavrilina G, et al. A novel intergenic ETnII-β insertion mutation causes multiple malformations in polypodia mice. Plos Genetics. 9: e1003967. PMID 24339789 DOI: 10.1371/Journal.Pgen.1003967  0.32
2013 Zariwala MA, Gee HY, Kurkowiak M, Al-Mutairi DA, Leigh MW, Hurd TW, Hjeij R, Dell SD, Chaki M, Dougherty GW, Adan M, Spear PC, Esteve-Rudd J, Loges NT, Rosenfeld M, ... ... Washburn J, et al. ZMYND10 is mutated in primary ciliary dyskinesia and interacts with LRRC6. American Journal of Human Genetics. 93: 336-45. PMID 23891469 DOI: 10.1016/J.Ajhg.2013.06.007  0.32
2013 Gee HY, Saisawat P, Ashraf S, Hurd TW, Vega-Warner V, Fang H, Beck BB, Gribouval O, Zhou W, Diaz KA, Natarajan S, Wiggins RC, Lovric S, Chernin G, Schoeb DS, ... ... Washburn J, et al. ARHGDIA mutations cause nephrotic syndrome via defective RHO GTPase signaling. The Journal of Clinical Investigation. 123: 3243-53. PMID 23867502 DOI: 10.1172/Jci69134  0.32
2013 Paulsen MT, Veloso A, Prasad J, Bedi K, Ljungman EA, Tsan YC, Chang CW, Tarrier B, Washburn JG, Lyons R, Robinson DR, Kumar-Sinha C, Wilson TE, Ljungman M. Coordinated regulation of synthesis and stability of RNA during the acute TNF-induced proinflammatory response. Proceedings of the National Academy of Sciences of the United States of America. 110: 2240-5. PMID 23345452 DOI: 10.1073/Pnas.1219192110  0.32
2012 Zhou W, Otto EA, Cluckey A, Airik R, Hurd TW, Chaki M, Diaz K, Lach FP, Bennett GR, Gee HY, Ghosh AK, Natarajan S, Thongthip S, Veturi U, Allen SJ, ... ... Washburn J, et al. FAN1 mutations cause karyomegalic interstitial nephritis, linking chronic kidney failure to defective DNA damage repair. Nature Genetics. 44: 910-5. PMID 22772369 DOI: 10.1038/Ng.2347  0.32
2010 Chun SY, Johnson C, Washburn JG, Cruz-Correa MR, Dang DT, Dang LH. Oncogenic KRAS modulates mitochondrial metabolism in human colon cancer cells by inducing HIF-1α and HIF-2α target genes. Molecular Cancer. 9: 293. PMID 21073737 DOI: 10.1186/1476-4598-9-293  0.32
2010 Otto EA, Hurd TW, Airik R, Chaki M, Zhou W, Stoetzel C, Patil SB, Levy S, Ghosh AK, Murga-Zamalloa CA, van Reeuwijk J, Letteboer SJ, Sang L, Giles RH, Liu Q, ... ... Washburn J, et al. Candidate exome capture identifies mutation of SDCCAG8 as the cause of a retinal-renal ciliopathy. Nature Genetics. 42: 840-50. PMID 20835237 DOI: 10.1038/Ng.662  0.32
2010 Mercer DR, Washburn JO, Anderson JR. Vertical oviposition and Lambornella clarki (Ciliophora: Tetrahymenidae) dispersal by Aedes sierrensis (Diptera: Culicidae) in California. Journal of Vector Ecology : Journal of the Society For Vector Ecology. 35: 20-7. PMID 20618643 DOI: 10.1111/j.1948-7134.2010.00023.x  0.4
2009 Hildebrandt F, Heeringa SF, Rüschendorf F, Attanasio M, Nürnberg G, Becker C, Seelow D, Huebner N, Chernin G, Vlangos CN, Zhou W, O'Toole JF, Hoskins BE, Wolf MT, Hinkes BG, ... ... Washburn J, et al. A systematic approach to mapping recessive disease genes in individuals from outbred populations. Plos Genetics. 5: e1000353. PMID 19165332 DOI: 10.1371/Journal.Pgen.1000353  0.32
2007 Tazuke Y, Wildhaber BE, Yang H, Washburn J, Teitelbaum DH. Total parenteral nutrition leads to alteration of hepatocyte cell cycle gene expression and proliferation in the mouse Digestive Diseases and Sciences. 52: 920-930. PMID 17342396 DOI: 10.1007/S10620-006-9364-1  0.32
2007 Chun SY, Chen F, Washburn JG, MacDonald JW, Innes KL, Zhao R, Cruz-Correa MR, Dang LH, Dang DT. CDX2 promotes anchorage-independent growth by transcriptional repression of IGFBP-3 Oncogene. 26: 4725-4729. PMID 17297462 DOI: 10.1038/sj.onc.1210258  0.32
2006 Ganz HH, Washburn JO. Relative migration rates and local adaptation in a mosquito-protozoan interaction Journal of Evolutionary Biology. 19: 816-824. PMID 16674578 DOI: 10.1111/J.1420-9101.2005.01047.X  0.4
2005 Ohkawa T, Washburn JO, Sitapara R, Sid E, Volkman LE. Specific binding of Autographa californica M nucleopolyhedrovirus occlusion-derived virus to midgut cells of Heliothis virescens larvae is mediated by products of pif genes Ac119 and Ac022 but not by Ac115. Journal of Virology. 79: 15258-64. PMID 16306597 DOI: 10.1128/Jvi.79.24.15258-15264.2005  0.4
2005 Zhang JH, Ohkawa T, Washburn JO, Volkman LE. Effects of Ac150 on virulence and pathogenesis of Autographa californica multiple nucleopolyhedrovirus in noctuid hosts. The Journal of General Virology. 86: 1619-27. PMID 15914839 DOI: 10.1099/Vir.0.80930-0  0.4
2005 Haas-Stapleton EJ, Washburn JO, Volkman LE. Spodoptera frugiperda resistance to oral infection by Autographa californica multiple nucleopolyhedrovirus linked to aberrant occlusion-derived virus binding in the midgut. The Journal of General Virology. 86: 1349-55. PMID 15831946 DOI: 10.1099/Vir.0.80845-0  0.4
2004 Haas-Stapleton EJ, Washburn JO, Volkman LE. P74 mediates specific binding of Autographa californica M nucleopolyhedrovirus occlusion-derived virus to primary cellular targets in the midgut epithelia of Heliothis virescens Larvae. Journal of Virology. 78: 6786-91. PMID 15194753 DOI: 10.1128/Jvi.78.13.6786-6791.2004  0.4
2004 Zhang JH, Washburn JO, Jarvis DL, Volkman LE. Autographa californica M nucleopolyhedrovirus early GP64 synthesis mitigates developmental resistance in orally infected noctuid hosts. The Journal of General Virology. 85: 833-42. PMID 15039526 DOI: 10.1099/Vir.0.19773-0  0.4
2004 Ray ME, Yang ZQ, Albertson D, Kleer CG, Washburn JG, Macoska JA, Ethier SP. Genomic and expression analysis of the 8p11-12 amplicon in human breast cancer cell lines. Cancer Research. 64: 40-7. PMID 14729606 DOI: 10.1158/0008-5472.Can-03-1022  0.32
2003 Haas-Stapleton EJ, Washburn JO, Volkman LE. Pathogenesis of Autographa californica M nucleopolyhedrovirus in fifth instar Spodoptera frugiperda. The Journal of General Virology. 84: 2033-40. PMID 12867633 DOI: 10.1099/Vir.0.19174-0  0.4
2003 Milks ML, Washburn JO, Willis LG, Volkman LE, Theilmann DA. Deletion of pe38 attenuates AcMNPV genome replication, budded virus production, and virulence in heliothis virescens. Virology. 310: 224-34. PMID 12781710 DOI: 10.1016/S0042-6822(03)00143-0  0.4
2003 Chaib H, MacDonald JW, Vessella RL, Washburn JG, Quinn JE, Odman A, Rubin MA, Macoska JA. Haploinsufficiency and reduced expression of genes localized to the 8p chromosomal region in human prostate tumors. Genes, Chromosomes & Cancer. 37: 306-13. PMID 12759929 DOI: 10.1002/gcc.10226  0.32
2003 Washburn JO, Trudeau D, Wong JF, Volkman LE. Early pathogenesis of Autographa californica multiple nucleopolyhedrovirus and Helicoverpa zea single nucleopolyhedrovirus in Heliothis virescens: a comparison of the 'M' and 'S' strategies for establishing fatal infection. The Journal of General Virology. 84: 343-51. PMID 12560566 DOI: 10.1099/Vir.0.18701-0  0.4
2003 Washburn JO, Chan EY, Volkman LE, Aumiller JJ, Jarvis DL. Early synthesis of budded virus envelope fusion protein GP64 enhances Autographa californica multicapsid nucleopolyhedrovirus virulence in orally infected Heliothis virescens. Journal of Virology. 77: 280-90. PMID 12477833 DOI: 10.1128/Jvi.77.1.280-290.2003  0.4
2003 Chaib H, MacDonald JW, Vessella RL, Washburn JG, Quinn JE, Odman A, Rubin MA, Macoska JA. Haploinsufficiency and reduced expression of genes localized to the 8p chromosomal region in human prostate tumors European Urology, Supplements. 2.  0.32
2003 Washburn J, Heindel A. International court support [8] Aba Journal. 89: 12-13.  0.56
2002 Liliental-Weber Z, Zakharov D, Jasinski J, Washburn J, O'Keefe MA, Morkoc H. Screw dislocations in MBE GaN layers grown on top of HVPE layers: Are they different? Materials Research Society Symposium - Proceedings. 743: 243-248. DOI: 10.1557/Proc-743-L3.48  1
2002 Liliental-Weber Z, Jasinski J, Washburn J. Differences and similarities between structural properties of GaN grown by different growth methods Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 70-75. DOI: 10.1109/Sim.2002.1242728  1
2002 Lim SH, Washburn J, Liliental-Weber Z. Transmission electron microscopy analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN Journal of Electron Microscopy. 51. DOI: 10.1093/Jmicro/51.Supplement.S171  1
2002 Jasinski J, Swider W, Washburn J, Liliental-Weber Z, Chaiken A, Nauka K, Gibson GA, Yang CC. Crystal structure of κ-In2Se3 Applied Physics Letters. 81: 4356-4358. DOI: 10.1063/1.1526925  1
2002 Liliental-Weber Z, Jasinski J, Washburn J, O'Keefe MA. Screw dislocations in GaN Microscopy and Microanalysis. 8: 1198-1199. DOI: 10.1017/S1431927602107860  1
2002 Liliental-Weber Z, Jasinski J, Washburn J. Comparison between structural properties of bulk GaN grown in liquid Ga under high N pressure and GaN grown by other methods Journal of Crystal Growth. 246: 259-270. DOI: 10.1016/S0022-0248(02)01750-5  1
2001 Washburn JO, Wong JF, Volkman LE. Comparative pathogenesis of Helicoverpa zea S nucleopolyhedrovirus in noctuid larvae Journal of General Virology. 82: 1777-1784. PMID 11413390 DOI: 10.1099/0022-1317-82-7-1777  0.4
2001 Trudeau D, Washburn JO, Volkman LE. Central role of hemocytes in Autographa californica M nucleopolyhedrovirus pathogenesis in Heliothis virescens and Helicoverpa zea Journal of Virology. 75: 996-1003. PMID 11134313 DOI: 10.1128/Jvi.75.2.996-1003.2001  0.4
2001 Lim SH, Washburn J, Liliental-Weber Z, Shindo D. Transmission electron microscopy of threading dislocations in ZnO films grown on sapphire Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 2601-2603. DOI: 10.1116/1.1397462  1
2001 Jasinski J, Yu KM, Walukiewicz W, Washburn J, Liliental-Weber Z. Influence of microstructure on electrical properties of diluted GaNxAs1-x formed by nitrogen implantation Applied Physics Letters. 79: 931-933. DOI: 10.1063/1.1390487  1
2001 Lim SH, Washburn J, Liliental-Weber Z, Qiao D. Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Al ohmic contacts to n-AlGaN/GaN Applied Physics Letters. 78: 3797-3799. DOI: 10.1063/1.1378312  1
2001 Jasinski J, Yu KM, Walukiewicz W, Liliental-Weber Z, Washburn J. Effects of structural defects on the activation of sulfur donors in GaNxAs1-x formed by N implantation Physica B: Condensed Matter. 308: 874-876. DOI: 10.1016/S0921-4526(01)00930-9  1
2001 Bourret-Courchesne ED, Yu KM, Benamara M, Liliental-Weber Z, Washburn J. Mechanisms of dislocation reduction in GaN using an intermediate temperature interlayer Journal of Electronic Materials. 30: 1417-1420. DOI: 10.1007/S11664-001-0194-9  1
2001 Liliental-Weber Z, Benamara M, Washburn J, Domagala JZ, Bak-Misiuk J, Piner EL, Roberts JC, Bedair SM. Relaxation of InGaN thin layers observed by X-ray and transmission electron microscopy studies Journal of Electronic Materials. 30: 439-444. DOI: 10.1007/S11664-001-0056-5  1
2000 Washburn JG, Wojno KJ, Dey J, Powell IJ, Macoska JA. 8pter-p23 deletion is associated with racial differences in prostate cancer outcome Clinical Cancer Research. 6: 4647-4652. PMID 11156215  0.32
2000 Liliental-Weber Z, Benamara M, Swider W, Washburn J, Grzegory I, Porowski S, Dupuis RD, Eiting CJ. Mg segregation, difficulties of p-doping in gan Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/S1092578300004695  1
2000 Benamara M, Liliental-Weber Z, Mazur JH, Swider W, Washburn J, Iwaya M, Akasaki I, Amano H. The role of the multi buffer layer technique on the structural quality of GaN Mrs Internet Journal of Nitride Semiconductor Research. 5. DOI: 10.1557/Proc-595-F99W5.8  1
2000 Liliental-Weber Z, Benamara M, Jasinski J, Swider W, Washburn J, Grzegory I, Porowski S, Bak-Misiuk J, Domagala J, Bedair S, Eiting CI, Dupuis RD. Influence of Mg and In on defect formation in GaN: Bulk and MOCVD grown samples Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 2000: 3-10. DOI: 10.1109/SIM.2000.939187  0.48
2000 Sasaki A, Weber ER, Liliental-Weber Z, Ruvimov S, Washburn J, Nabetani Y. Transition thickness of semiconductor heteroepitaxy Thin Solid Films. 367: 277-280. DOI: 10.1016/S0040-6090(00)00688-X  1
2000 Hoover K, Washburn JO, Volkman LE. Midgut-based resistance of Heliothis virescens to baculovirus infection mediated by phytochemicals in cotton Journal of Insect Physiology. 46: 999-1007. DOI: 10.1016/S0022-1910(99)00211-5  0.4
2000 Washburn JO, Haas-Stapleton EJ, Tan FF, Beckage NE, Volkman LE. Co-infection of Manduca sexta larvae with polydnavirus from Cotesia congregata increases susceptibility to fatal infection by Autographa californica M Nucleopolyhedrovirus Journal of Insect Physiology. 46: 179-190. DOI: 10.1016/S0022-1910(99)00115-8  0.4
2000 Benamara M, Liliental-Weber Z, Kellermann S, Swider W, Washburn J, Mazur J, Bourret-Courchesne ED. Study of high-quality GaN grown by OMVPE using an intermediate layer Journal of Crystal Growth. 218: 447-450. DOI: 10.1016/S0022-0248(00)00568-6  1
2000 Lim SH, Swider W, Washburn J, Liliental-Weber Z. Structural analysis of interfacial layers in Ti/Ta/Al ohmic contacts to n-AlGaN Journal of Applied Physics. 88: 6364-6368.  1
2000 Mazur JH, Benamara M, Liliental-Weber Z, Swider W, Washburn J, Eiting CJ, Dupuis RD. Effect of the doping and the Al content on the microstructure and morphology of thin Al xGa 1-xN layers grown by MOCVD Mrs Internet Journal of Nitride Semiconductor Research. 5.  1
2000 Mazur JH, Benamara M, Liliental-Weber Z, Swider W, Washburn J, Eiting CJ, Dupuis RD. Effect of the doping and the Al content on the microstructure and morphology of thin AlxGa1-xN layers grown by MOCVD Materials Research Society Symposium - Proceedings. 595.  1
2000 Benamara M, Liliental-Weber Z, Kellermann S, Swider W, Washburn J, Mazur JH, Bourret-Courchesne ED. TEM study of high quality GaN grown by OMVPE using an intermediate layer Materials Research Society Symposium - Proceedings. 622.  1
2000 Bourret-Courchesne ED, Kellermann S, Yu KM, Benamara M, Liliental-Weber Z, Washburn J, Irvine SJC, Stafford A. Reduction of threading dislocation density in GaN using an intermediate temperature interlayer Applied Physics Letters. 77: 3562-3564.  1
2000 Eisenberg JNS, Washburn JO, Schreiber SJ. Generalist feeding behaviors of Aedes sierrensis larvae and their effects on protozoan populations Ecology. 81: 921-935.  0.4
2000 Benamara M, Liliental-Weber Z, Mazur JH, Swider W, Washburn J, Iwaya M, Akasaki I, Amano H. Role of the multi buffer layer technique on the structural quality of GaN Materials Research Society Symposium - Proceedings. 595.  1
1999 Washburn JO, Lyons EH, Haas-Stapleton EJ, Volkman LE. Multiple nucleocapsid packaging of Autographa californica nucleopolyhedrovirus accelerates the onset of systemic infection in Trichoplusia ni. Journal of Virology. 73: 411-6. PMID 9847346 DOI: 10.1128/Jvi.73.1.411-416.1999  0.4
1999 Liliental-Weber Z, Benamara M, Swider W, Washburn J, Park J, Grudowski PA, Eiting CJ, Dupuis RD. TEM study of defects in laterally overgrown GaN layers Mrs Internet Journal of Nitride Semiconductor Research. 4. DOI: 10.1557/S1092578300002891  1
1999 Liliental-Weber Z, Benamara M, Ruvimov S, Mazur JH, Washburn J, Grzegory I, Porowski S. TEM study of Mg-doped bulk GaN crystals Materials Research Society Symposium - Proceedings. 572: 363-368. DOI: 10.1557/Proc-572-363  1
1999 Benamara M, Liliental-Weber Z, Swider W, Washburn J, Dupuis RD, Grudowski PA, Eiting CJ, Yang JW, Khan MA. Atomic scale analysis of InGaN multi-quantum wells Materials Research Society Symposium - Proceedings. 572: 357-362. DOI: 10.1557/Proc-572-357  1
1999 Ruvimov S, Liliental-Weber Z, Washburn J, Kim Y, Sudhir GS, Krueger J, Weber ER. Effect of N/Ga flux ratio in GaN buffer layer growth by MBE on (0001) sapphire on defect formation in the GaN main layer Materials Research Society Symposium - Proceedings. 572: 295-300. DOI: 10.1557/Proc-572-295  1
1999 Liliental-Weber Z, Benamara M, Washburn J, Grzegory I, Porowski S. Spontaneous ordering in bulk GaN:Mg samples Physical Review Letters. 83: 2370-2373. DOI: 10.1103/Physrevlett.83.2370  1
1999 Liliental-Weber Z, Benamara M, Swider W, Washburn J, Grzegory I, Porowski S, Lambert DJH, Eiting CJ, Dupuis RD. Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal-organic chemical-vapor deposition Applied Physics Letters. 75: 4159-4161. DOI: 10.1063/1.125568  1
1999 Liliental-Weber Z, Benamara M, Swider W, Washburn J, Grzegory I, Porowski S, Dupuis RD, Eiting CJ. Ordering in bulk GaN : Mg samples: defects caused by Mg doping Physica B: Condensed Matter. 273: 124-129. DOI: 10.1016/S0921-4526(99)00422-6  1
1999 Maltez RL, Liliental-Weber Z, Washburn J, Behar M, Klein PB, Specht P, Weber ER. Structural and photoluminescence studies of Er implanted Be doped and undoped low-temperature grown GaAs Journal of Applied Physics. 85: 1105-1113.  1
1999 Ruvimov S, Dieker C, Washburn J, Liliental-Weber Z. Twinning of As precipitates in low-temperature GaAs during high temperature annealing Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 126-129.  1
1999 Ruvimov S, Liliental-Weber Z, Washburn J, Amano H, Akasaki I. Mechanisms of generation and atomic structure of defects in III-nitrides epitaxial systems for device applications Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 251-254.  1
1999 Ruvimov S, Liliental-Weber Z, Washburn J, Qiao D, Lui QZ, Lau SS. TEM/HREM of Ti/Al and WNi/Ti/Al ohmic contacts for n-AlGaN Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 247-250.  1
1999 Maltez RL, Liliental-Weber Z, Washburn J, Behar M, Klein PB, Specht P, Weber ER. Structural and photoluminescence analysis of Er implanted LT-GaAs Ieee Semiconducting and Semi-Insulating Materials Conference, Simc. 122-125.  1
1998 Kirkpatrick BA, Washburn JO, Volkman LE. AcMNPV Pathogenesis and Developmental Resistance in Fifth InstarHeliothis virescens Journal of Invertebrate Pathology. 72: 63-72. PMID 9647703 DOI: 10.1006/Jipa.1997.4752  0.4
1998 Liliental-Weber Z, Benamara M, Richter O, Swider W, Washburn J, Grzegory I, Porowski S, Yang JW, Nakamura S. Polarity of GaN Mrs Proceedings. 512: 363. DOI: 10.1557/Proc-512-363  0.48
1998 Behar M, Klein PB, Liliental-Weber Z, Maltez RL, Specht P, Washburn J, Weber ER. Structural and Photoluminescence Studies of Er Implanted Lt-GaAs:Be Mrs Proceedings. 510: 319. DOI: 10.1557/Proc-510-319  0.48
1998 Ruvimov S, Liliental-Weber Z, Washburn J, Ledentsov NN, Ustinov VM, Shchukirt VA, Kop'Ev PS, Alterov ZL, Bimberg D. Structural characterization of self-organized nanostructures Fizika Tverdogo Tela. 40: 849-851. DOI: 10.1134/1.1130394  1
1998 Ruvimov S, Liliental-Weber Z, Washburn J, Qiao D, Lau SS, Chu PK. Microstructure of Ti/Al ohmic contacts for n-AlGaN Applied Physics Letters. 73: 2582-2584. DOI: 10.1063/1.122512  1
1998 Maltez RL, Liliental-Weber Z, Washburn J, Behar M, Klein PB, Specht P, Weber ER. Transmission electron microscopy and photoluminescence studies of Er implanted low-temperature grown GaAs:Be Applied Physics Letters. 73: 2170-2172. DOI: 10.1063/1.122412  1
1998 Ruvimov S, Dicker C, Washburn J, Liliental-Weber Z. Twin formation in As precipitates in low-temperature GaAs during high-temperature annealing Applied Physics Letters. 72: 226-228. DOI: 10.1063/1.120693  1
1998 Rouvimov S, Liliental-Weber Z, Swider W, Washburn J, Weber ER, Sasaki A, Wakahara A, Furkawa Y, Abe T, Noda S. Effects of GaAs-spacer strain on vertical ordering of stacked InAs quantum dots in a GaAs matrix Journal of Electronic Materials. 27: 427-432. DOI: 10.1007/S11664-998-0172-6  1
1998 Washburn JO, Kirkpatrick BA, Haas-Stapleton E, Volkman LE. Evidence that the stilbene-derived optical brightener M2R enhances Autographa californica M nucleopolyhedrovirus infection of Trichoplusia ni and Heliothis virescens by preventing sloughing of infected midgut epithelial cells Biological Control. 11: 58-69. DOI: 10.1006/Bcon.1997.0572  0.4
1997 Ruvimov S, Liliental-Weber Z, Washburn J, Amano H, Akasaki I, Koike M. Atomic structure of grain boundaries and interfaces in III-nitrides epitaxial systems Materials Research Society Symposium - Proceedings. 482: 387-392. DOI: 10.1557/Proc-482-387  1
1997 Liliental-Weber Z, Chen Y, Ruvimov S, Washburn J. Formation mechanism of nanotubes in GaN Physical Review Letters. 79: 2835-2838. DOI: 10.1103/Physrevlett.79.2835  1
1997 Ruvimov S, Liliental-Weber Z, Washburn J, Drummond TJ, Hafich M, Lee SR. Microstructure of GaN layers grown on (001) GaAs by plasma assisted molecular-beam epitaxy Applied Physics Letters. 71: 2931-2933. DOI: 10.1063/1.120219  0.48
1997 Liliental-Weber Z, Washburn J, Pakula K, Baranowski J. Convergent Beam Electron Diffraction and Transmission Electron Microscopy Study of Interfacial Defects in Gallium Nitride Homoepitaxial Films Microscopy and Microanalysis. 3: 436-442. DOI: 10.1017/S1431927697970331  0.48
1997 Jasinski J, Liliental-Weber Z, Washburn J, Tan HH, Jagadish C, Krotkus A, Marcinkevicius S, Kaminska M. Structural, electrical, and optical studies of GaAs implanted with MeV As or Ga ions Journal of Electronic Materials. 26: 449-457. DOI: 10.1007/S11664-997-0118-4  0.48
1997 Liliental-Weber Z, Chen Y, Ruvimov S, Washburn J. Nanotubes and pinholes in GaN and their formation mechanism Materials Science Forum. 258: 1659-1664.  1
1996 Chen Y, Washburn J. Structural Transition in Large-Lattice-Mismatch Heteroepitaxy Physical Review Letters. 77: 4046-4049. PMID 10062374 DOI: 10.1103/Physrevlett.77.4046  0.96
1996 Liliental-Weber Z, Ruvimov S, Suski T, Ager JW, Swider W, Chen Y, Kisielowski C, Washburn J, Akasaki I, Amano H, Kuo C, Imler W. Effect of Si Doping on The Structure of Gan Mrs Proceedings. 423: 487. DOI: 10.1557/Proc-423-487  0.96
1996 Ruvimov S, Liliental‐Weber Z, Suski T, Ager JW, Washburn J, Krueger J, Kisielowski C, Weber ER, Amano H, Akasaki I. Effect of Si doping on the dislocation structure of GaN grown on the A‐face of sapphire Applied Physics Letters. 69: 990-992. DOI: 10.1063/1.117105  0.48
1996 Ruvimov S, Bourret ED, Washburn J, Liliental‐Weber Z. Nucleation and evolution of misfit dislocations in ZnSe/GaAs (001) heterostructures grown by low‐pressure organometallic vapor phase epitaxy Applied Physics Letters. 68: 346-348. DOI: 10.1063/1.116711  0.48
1996 Jasinski J, Chen Y, Washburn J, Liliental‐Weber Z, Tan HH, Jagadish C, Kaminska M. Recrystallization of high energy As‐implanted GaAs studied by transmission electron microscopy Applied Physics Letters. 68: 1501-1503. DOI: 10.1063/1.115679  0.96
1996 Liliental-Weber Z, Kisielowski C, Ruvimov S, Chen Y, Washburn J, Grzegory I, Bockowski M, Jun J, Porowski S. Structural characterization of bulk GaN crystals grown under high hydrostatic pressure Journal of Electronic Materials. 25: 1545-1550. DOI: 10.1007/Bf02655397  0.96
1995 Lin XW, Liliental-Weber Z, Washburn J, Weber ER, Sasaki A, Wakahara A, Hasegawa T. Sn submonolayer-mediated Ge heteroepitaxy on Si(001). Physical Review B. 52: 16581-16587. PMID 9981057 DOI: 10.1103/Physrevb.52.16581  0.48
1995 Ruvimov S, Liliental-Weber Z, Swider W, Washburn J, Holmes DE. Tem/Hrem Structural Characterization of Directionally Solidified Gaas-Cras Eutectic Crystals Mrs Proceedings. 398. DOI: 10.1557/Proc-398-151  0.48
1995 Piotrowska A, Kamińska E, Piotrowski T, Kasjaniuk S, Guziewicz M, Gierlotka S, Lin XW, Liliental-Weber Z, Washburn J, Kwiatkowski S. Interaction of Au with GaSb and its Impact on the Formation of Ohmic Contacts Acta Physica Polonica A. 87: 419-422. DOI: 10.12693/Aphyspola.87.419  0.48
1994 Chen Y, Liu X, Weber E, Bourret ED, Liliental-Weber Z, Haller EE, Washburn J, Olego DJ, Dorman DR, Gaines JM, Tasker NR. Structures and electronic properties of misfit dislocations in ZnSe/GaAs(001) heterojunctions Applied Physics Letters. 65: 549-551. DOI: 10.1557/Proc-340-491  1
1994 Lin XW, Washburn J, Liliental‐Weber Z, Bernas H. Coarsening and phase transition of FeSi2 precipitates in Si Journal of Applied Physics. 75: 4686-4694. DOI: 10.1063/1.355922  0.44
1994 Lin XW, Lampert WV, Swider W, Haas TW, Holloway PH, Washburn J, Liliental-Weber Z. Morphology of AlNiGe ohmic contacts to n-GaAs as a function of contact composition Thin Solid Films. 253: 490-495. DOI: 10.1016/0040-6090(94)90372-7  1
1993 Lin XX, Desimoni J, Bemas H, Liliental-Weber Z, Washburn J. Evolution of Cubic FeSi 2 in Si upon Thermal Annealing Mrs Proceedings. 311: 293. DOI: 10.1557/Proc-311-293  0.48
1993 Chen Y, Liliental-Weber Z, Washburn J, Klem JF, Tsao JY. Reorientation of Misfit Dislocations During Annealing in InGaAs/GaAs(001) Interfaces Mrs Proceedings. 308: 405. DOI: 10.1557/Proc-308-405  0.96
1993 Lin XW, Piotrowska A, Kaminska E, Liliental-Weber Z, Washburn J. Metallurgical and Electrical Properties of Capped Au-based Metallizations on GaAs Mrs Proceedings. 300: 285. DOI: 10.1557/Proc-300-285  0.48
1993 Im S, Washburn J, Gronsky R, Cheung NW, Yu KM, Ager JW. Reducing Dislocation Density by Sequential Implantation of Ge and C in Si Mrs Proceedings. 298: 139-143. DOI: 10.1557/Proc-298-139  0.32
1993 Im S, Washburn J, Gronsky R, Cheung NW, Yu KM, Ager JW. Optimization of Ge/C ratio for compensation of misfit strain in solid phase epitaxial growth of SiGe layers Applied Physics Letters. 63: 2682-2684. DOI: 10.1063/1.110419  1
1993 Im S, Washburn J, Gronsky R, Cheung NW, Yu KM. Defect control during solid phase epitaxial growth of SiGe alloy layers Applied Physics Letters. 63: 929-931. DOI: 10.1063/1.109847  1
1993 Werner P, Zakharov ND, Chen Y, Liliental‐Weber Z, Washburn J, Klem JF, Tsao JY. Stress releasing mechanisms in In0.2Ga0.8As layers grown on misoriented GaAs [001] substrate Applied Physics Letters. 62: 2798-2800. DOI: 10.1063/1.109213  0.96
1993 Chen Y, Zakharov ND, Werner P, Liliental‐Weber Z, Washburn J, Klem JF, Tsao JY. Structure and location of misfit dislocations in InGaAs epilayers grown on vicinal GaAs(001) substrates Applied Physics Letters. 62: 1536-1538. DOI: 10.1063/1.108632  0.96
1993 Desimoni J, Behar M, Bernas H, Lin XW, Liliental-Weber Z, Washburn J. Ion-beam-induced simultaneous epitaxial growth of α- and cubic FeSi2 in Si (100) at 320°C Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 80: 755-758. DOI: 10.1016/0168-583X(93)90675-V  0.48
1993 Zakharov ND, Werner P, Chen Y, Swider W, Liliental-Weber Z, Washburn J, Klem JF, Tsao JY. Compositional nonuniformities and strain relaxation at misoriented In x Ga (1-x) As/GaAs interfaces Journal of Electronic Materials. 22: 1341-1344. DOI: 10.1007/Bf02817697  0.96
1993 Zakharov ND, Liliental-Weber Z, Swider W, Washburn J, Brown AS, Metzger R. Ordering in InGaAs/InAlAs layers Journal of Electronic Materials. 22: 1495-1498. DOI: 10.1007/Bf02650006  0.48
1993 Liliental-Weber Z, Yu KM, Washburn J, Look DC. Anomalies in annealed LT-GaAs samples Journal of Electronic Materials. 22: 1395-1399. DOI: 10.1007/Bf02649984  0.48
1992 Werner P, Zakharov ND, Chen Y, Liliental-Weber Z, Washburn J, Klem JF, Tsao JY. Investigation of misfit dislocation configurations in MBE-grown InGaAs layers on misaligned GaAs (001) substrates Mrs Proceedings. 283. DOI: 10.1557/Proc-283-811  0.96
1992 Lin XW, Behar M, Desimoni J, Bemas H, Swider W, Liliental-Weber Z, Washburn J. Epitaxial Phase Formation of FeSi 2 in an Fe-Implanted Si by Ion Irradiation and Rapid Thermal Annealing Mrs Proceedings. 279: 535. DOI: 10.1557/Proc-279-535  0.48
1992 Norton AP, Washburn JO, Omi EM. Axenic culture of Lambornella clarki (Ciliophora: Tetrahymenidae), an endoparasite of Aedes sierrensis (diptera: Culicidae) Journal of Invertebrate Pathology. 60: 164-170. DOI: 10.1016/0022-2011(92)90091-H  0.4
1991 Washburn J, Kvam EP, Liliental-Weber Z. Defect formation in epitaxial crystal growth Journal of Electronic Materials. 20: 155-161. DOI: 10.1007/Bf02653317  1
1991 Kvam EP, Washburn J, Allen LP, Zavracky PM. Materials study of silicon-on-lnsulator material by TEM Journal of Electronic Materials. 20: 151-153. DOI: 10.1007/Bf02653316  1
1990 Olson DA, Yu KM, Washburn J, Sands T. Thin Film Reactions on Alloy Semiconductor Substrates Mrs Proceedings. 202. DOI: 10.1557/Proc-202-713  0.32
1990 Washburn J, Kvam EP. Possible dislocation multiplication source in (001) semiconductor epitaxy Applied Physics Letters. 57: 1637-1639. DOI: 10.1063/1.104072  1
1990 Wong H, Lou J, Cheung NW, Kvam EP, Yu KM, Olson DA, Washburn J. Cross-section transmission electron microscopy study of carbon-implanted layers in silicon Applied Physics Letters. 57: 798-800. DOI: 10.1063/1.103424  1
1989 Leon RP, Newman N, Liliental-Weber Z, Weber ER, Washburn J, Spicer WE. Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes Journal of Applied Physics. 66: 711-715. DOI: 10.1063/1.343543  1
1989 Liliental-Weber Z, Newman N, Washburn J, Weber ER, Spicer WE. Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts Applied Physics Letters. 54: 356-358. DOI: 10.1063/1.100968  1
1988 Washburn JO, Gross ME, Mercer DR, Anderson JR. Predator-induced trophic shift of a free-living ciliate: Parasitism of mosquito larvae by their prey Science. 240: 1193-1195. PMID 3131877 DOI: 10.1126/science.3131877  0.4
1988 Miret A, Newman N, Weber ER, Liliental-Weber Z, Washburn J, Spicer WE. Aging of Schottky diodes formed on air-exposed and atomically clean GaAs surfaces: An electrical study Journal of Applied Physics. 63: 2006-2010. DOI: 10.1063/1.341178  1
1988 Newman N, Liliental-Weber Z, Weber ER, Washburn J, Spicer WE. Schottky barrier instabilities due to contamination Applied Physics Letters. 53: 145-147. DOI: 10.1063/1.100351  1
1988 Liliental-Weber Z, Weber ER, Parechanian-Allen L, Washburn J. On the use of convergent-beam electron diffraction for identification of antiphase boundaries in GaAs grown on Si Ultramicroscopy. 26: 59-63. DOI: 10.1016/0304-3991(88)90377-4  0.48
1987 Sands T, Chang CC, Kaplan AS, Keramidas VG, Krishnan KM, Washburn J. Ni-InP reaction: Formation of amorphous and crystalline ternary phases Applied Physics Letters. 50: 1346-1348. DOI: 10.1063/1.97851  1
1986 Shih Y, Washburn J, Gronsky R, Weber ER. AMORPHIZATION OF SILICON BY BORON ION IMPLANTATION Materials Research Society Symposia Proceedings. 71: 203-209. DOI: 10.1557/Proc-71-203  1
1986 Ling P, Wu NR, Washburn J. Regrowth of Implanted–Amorphous Si Mrs Proceedings. 71: 179. DOI: 10.1557/Proc-71-179  0.4
1986 Liliental-Weber Z, Washburn J, Newman N, Spicer WE, Weber ER. Morphology of Au/GaAs interfaces Applied Physics Letters. 49: 1514-1516. DOI: 10.1063/1.97318  1
1986 Sands T, Keramidas VG, Gronsky R, Washburn J. Initial stages of the Pd-GaAs reaction: Formation and decomposition of ternary phases Thin Solid Films. 136: 105-122. DOI: 10.1016/0040-6090(86)90113-6  1
1985 Liliental Z, Kocot C, Washburn J, Gronsky R. TEM investigation of titanium-silicide Schottky contacts on GaAs Ultramicroscopy. 18: 361-369. DOI: 10.1016/0304-3991(85)90154-8  1
1985 Sands T, Keramidas VG, Gronsky R, Washburn J. Ternary phases in the Pd-GaAs system: Implications for shallow contacts to GaAs Materials Letters. 3: 409-413. DOI: 10.1016/0167-577X(85)90089-8  1
1985 Sands T, Washburn J, Gronsky R. Crystallographic relationships between GaAs, As and Ga2O3 at the GaAs-thermal oxide interface Materials Letters. 3: 247-250. DOI: 10.1016/0167-577X(85)90066-7  1
1984 Sands T, Washburn J, Gronsky R, Maszara W, Sadana DK, Rozgonyi GA. Near-surface defects formed during rapid thermal annealing of preamorphized and BF+2-implanted silicon Applied Physics Letters. 45: 982-984. DOI: 10.1063/1.95446  1
1984 Sands T, Sadana DK, Gronsky R, Washburn J. High resolution structural characterization of the amorphous-crystalline interface in Se+-implanted GaAs Applied Physics Letters. 44: 874-876. DOI: 10.1063/1.94963  1
1984 Sands T, Washburn J, Gronsky R. Interface morphology and phase distribution in the Cu2-xS/CdS heterojunction: A transmission electron microscope investigation Solar Energy Materials. 10: 349-370. DOI: 10.1016/0165-1633(84)90041-8  1
1983 Sadana DK, Wu NR, Washburn J, Morgan A, Reed D, Maenpaa M. The effect of recoiled oxygen on damage regrowth and electrical properties of through-oxide implanted Si Nuclear Instruments and Methods in Physics Research. 743-750. DOI: 10.1016/0167-5087(83)90877-3  0.4
1983 Washburn J, Murty CS, Sadana D, Byrne P, Gronsky R, Cheung N, Kilaas R. The crystalline to amorphous transformation in silicon Nuclear Instruments and Methods in Physics Research. 209: 345-350. DOI: 10.1016/0167-5087(83)90821-9  1
1982 SANDS TD, WASHBURN J, GRONSKY R. HIGH RESOLUTION OBSERVATIONS OF COPPER VACANCY ORDERING IN CHALCOCITE (CU//2S) AND THE TRANSFORMATION TO DJURLEITE (CU//1//. //9//7 //T//O //1//. //9//4S) Phys Status Solidi A. 551-559. DOI: 10.1002/Pssa.2210720216  1
1981 Sadana DK, Strathman M, Washburn J, Booker GR. TRANSMISSION ELECTRON MICROSCOPY AND RUTHERFORD BACKSCATTERING STUDIES OF SINGLE AND DOUBLE DISCRETE BURIED DAMAGE LAYERS IN P** plus IMPLANTED Si ON SUBSEQUENT LASER ANNEALING. Journal of Applied Physics. 52: 744-747. DOI: 10.1063/1.328756  1
1980 Sadana DK, Strathman M, Washburn J, Magee CW, Mäenpää M, Booker GR. Effect on electrical properties of segregation of implanted P+ at defect sites in Si Applied Physics Letters. 37: 615-618. DOI: 10.1063/1.92038  1
1980 Sadana DK, Strathman M, Washburn J, Booker GR. On the comparison of transmission electron microscopy and channeled Rutherford backscattering techniques to evaluate the multilayer subsurface damage structures Applied Physics Letters. 37: 234-236. DOI: 10.1063/1.91836  1
1977 Wu W, Washburn J. On the climb of dislocations in boron‐ion‐implanted silicon Journal of Applied Physics. 48: 3747-3751. DOI: 10.1063/1.324293  0.6
1977 Wu W, Washburn J. On the shrinkage of rod‐shaped defects in boron‐ion‐implanted silicon Journal of Applied Physics. 48: 3742-3746. DOI: 10.1063/1.324292  0.6
1974 Wu W, Washburn J. Identification of interstitial‐ and vacancy‐type dislocation loops in ion‐implanted silicon Journal of Applied Physics. 45: 1085-1090. DOI: 10.1063/1.1663371  0.6
1973 Narayan J, Washburn J. Self diffusion in magnesium oxide Acta Metallurgica. 21: 533-538. DOI: 10.1016/0001-6160(73)90060-6  1
1972 Narayan J, Washburn J. SELF-CLIMB OF DISLOCATION LOOPS IN MAGNESIUM OXIDE Phil Mag. 26: 1179-1190. DOI: 10.1080/14786437208227372  1
1972 Narayan J, Washburn J. Stability of dislocation loops near a free surface Journal of Applied Physics. 43: 4862-4865. DOI: 10.1063/1.1661038  1
1954 Bainbridge DW, Li CH, Edwards EH, Washburn J, Parker ER. Recent Observations On The Motion Of Small Angle Dislocation Boundaries Acta Metallurgica. 2: 322-333. DOI: 10.1016/0001-6160(54)90175-3  0.96
1954 Edwards EH, Washburn J. Strain hardening of latent slip systems in zinc crystals Jom. 6: 1239-1242. DOI: 10.1007/Bf03398362  0.8
1953 Li CH, Edwards EH, Washburn J, Parker ER. Stress-induced movement of crystal boundaries Acta Metallurgica. 1: 223-229. DOI: 10.1016/0001-6160(53)90062-5  1
1952 Washburn J, Parker ER. Kinking in Zinc Single-Crystal Tension Specimens Jom. 4: 1076-1078. DOI: 10.1007/Bf03397774  0.96
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