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Bei Chen, Ph.D. - Publications

Affiliations: 
2006 North Carolina State University, Raleigh, NC 
Area:
Electronics and Electrical Engineering
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2006 Jha R, Chung J, Chen B, Nemanich R, Misra V. A Systematic Approach of Understanding and Retaining Pmos Compatible Work Function of Metal Electrodes On HfO2 Gate Dielectrics Mrs Proceedings. 917. DOI: 10.1557/Proc-0917-E04-05  0.728
2006 Lichtenwalner DJ, Jur JS, Jha R, Inoue N, Chen B, Misra V, Kingon AI. High-Temperature Stability of Lanthanum Silicate Gate Dielectric MIS Devices with Ta and TaN Electrodes Journal of the Electrochemical Society. 153: F210. DOI: 10.1149/1.2218757  0.709
2006 Chen B, Biswas N, Misra V. Electrical and Physical Analysis of MoTa Alloy for Gate Electrode Applications Journal of the Electrochemical Society. 153: G417. DOI: 10.1149/1.2180710  0.667
2006 Chen B, Jha R, Misra V. Work Function Tuning Via Interface Dipole by Ultrathin Reaction Layers Using AlTa and AlTaN Alloys Ieee Electron Device Letters. 27: 731-733. DOI: 10.1109/Led.2006.880643  0.72
2006 Chen B, Jha R, Lazar H, Biswas N, Lee J, Lee B, Wielunski L, Garfunkel E, Misra V. Influence of oxygen diffusion through capping layers of low work function metal gate electrodes Ieee Electron Device Letters. 27: 228-230. DOI: 10.1109/Led.2006.871184  0.651
2005 Suh Y, Lazar H, Chen B, Lee J, Misra V. Electrical Characteristics of HfO[sub 2] Dielectrics with Ru Metal Gate Electrodes Journal of the Electrochemical Society. 152: F138. DOI: 10.1149/1.1992467  0.686
2005 Lin Y, Öztürk MC, Chen B, Rhee SJ, Lee JC, Misra V. Impact of Ge on integration of Hf O2 and metal gate electrodes on strained Si channels Applied Physics Letters. 87. DOI: 10.1063/1.2009809  0.746
2005 Chen B, Suh Y, Lee J, Gurganus J, Misra V, Cabral C. Physical and electrical analysis of RuxYy alloys for gate electrode applications Applied Physics Letters. 86: 053502. DOI: 10.1063/1.1857093  0.657
2005 Lee CK, Kim JY, Hong SN, Zhong H, Chen B, Misra V. Properties of Ta–Mo alloy gate electrode for n-MOSFET Journal of Materials Science. 40: 2693-2695. DOI: 10.1007/S10853-005-2108-3  0.754
1996 Bernholc J, Boguslawski P, Briggs EL, Buongiorno Nardelli M, Chen B, Rapcewicz K, Zhang Z. Theory of defects, doping, surfaces and interfaces in wide gap nitrides Materials Research Society Symposium - Proceedings. 423: 465-474. DOI: 10.1557/Proc-423-465  0.414
1995 Nemanich R, Benjamin MC, Bozeman SP, Bremser MD, King SW, Ward BL, Davis RF, Chen B, Zhang Z, Bernholc J. Negative) Electron Affinity of AlN and AlGaN Alloys Mrs Proceedings. 395: 777-788. DOI: 10.1557/Proc-395-777  0.323
1989 Chen B, Biunno N, Singh RK, Narayan J. Laser Chemical Vapor Deposition Of Tin Films Mrs Proceedings. 168. DOI: 10.1557/Proc-168-287  0.3
1988 Narayan J, Biunno N, Srivatsa A, Singh R, Chen B. Laser Physical and Laser Chemical Vapor Deposition of TiN and TiNxOy Films Mrs Proceedings. 129. DOI: 10.1557/Proc-129-435  0.313
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