Shivashankar Vangala, Ph.D. - Publications

Affiliations: 
2007 University of Massachusetts Lowell, MA 01854 USA 
Area:
Condensed Matter Physics

69 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Vangala S, Tassev V, Snure M. Thick Heteroepitaxial Growth of ZnSe on GaAs Substrates for Frequency Conversion in the MLWIR Nonlinear Optics. DOI: 10.1364/Nlo.2019.Ntu4A.40  0.4
2017 Smith EM, Streyer WH, Nader N, Vangala S, Soref R, Wasserman D, Cleary JW. Palladium Germanides for Mid- and Long-Wave Infrared Plasmonics Mrs Advances. 2: 2385-2390. DOI: 10.1557/Adv.2017.379  0.68
2017 Vangala S, Peterson R, Snure M, Tassev V. Development of orientation-patterned GaP grown on foreign substrates for QPM frequency conversion devices Proceedings of Spie. 10088. DOI: 10.1117/12.2250639  0.4
2016 Snure M, Vangala S, Walker D. Probing phonon and electrical anisotropy in black phosphorus for device alignment Optical Materials Express. 6: 1751-1756. DOI: 10.1364/Ome.6.001751  1
2016 Tassev VL, Vangala SR, Peterson RD, Kimani MM, Snure M, Stites RW, Guha S, Slagle JE, Ensley TR, Syed AA, Markov IV. Heteroepitaxial growth of OPGaP on OPGaAs for frequency conversion in the IR and THz Optical Materials Express. 6: 1724-1737. DOI: 10.1364/Ome.6.001724  1
2016 Tassev VL, Vangala S, Peterson R, Kimani M, Snure M, Markov I. Homo and heteroepitaxial growth and study of orientation-patterned GaP for nonlinear frequency conversion devices Proceedings of Spie - the International Society For Optical Engineering. 9731. DOI: 10.1117/12.2217464  1
2016 Vangala S, Kimani M, Peterson R, Stites R, Snure M, Tassev V. Thick orientation-patterned growth of GaP on wafer-fused GaAs templates by hydride vapor phase epitaxy for frequency conversion Optical Materials. 60: 62-66. DOI: 10.1016/J.Optmat.2016.07.003  1
2015 Cleary JW, Streyer WH, Nader N, Vangala S, Avrutsky I, Claflin B, Hendrickson J, Wasserman D, Peale RE, Buchwald W, Soref R. Platinum germanides for mid- and long-wave infrared plasmonics. Optics Express. 23: 3316-26. PMID 25836190 DOI: 10.1364/Oe.23.003316  0.68
2015 Snure M, Vangala S, Shoaf J, Hu J, Paduano Q. Influence of Cu film microstructure on MOCVD growth of BN Materials Research Society Symposium Proceedings. 1726. DOI: 10.1557/Opl.2015.654  1
2015 Mathur V, Vangala S, Khoury J. Fabrication and characterization of an all optically addressed micromirror array Journal of Micro/ Nanolithography, Mems, and Moems. 14. DOI: 10.1117/1.Jmm.14.1.015501  0.64
2015 Mathur V, Vangala S. GaAs p-i-n photodiode array on GaP using wafer fusion Ieee Photonics Technology Letters. 27: 466-469. DOI: 10.1109/Lpt.2014.2377234  1
2015 Mathur V, Vangala S. A low-stress microactuator array with integrated thin-film resistors Ieee Photonics Technology Letters. 27: 141-144. DOI: 10.1109/Lpt.2014.2363409  1
2015 Hendrickson JR, Vangala S, Nader N, Leedy K, Guo J, Cleary JW. Plasmon resonance and perfect light absorption in subwavelength trench arrays etched in gallium-doped zinc oxide film Applied Physics Letters. 107. DOI: 10.1063/1.4935219  1
2015 Nader N, Vangala S, Hendrickson JR, Leedy KD, Look DC, Guo J, Cleary JW. Investigation of plasmon resonance tunneling through subwavelength hole arrays in highly doped conductive ZnO films Journal of Applied Physics. 118. DOI: 10.1063/1.4934875  1
2014 Nader N, Streyer W, Vangala S, Wasserman D, Hendrickson JR, Cleary JW. Platinum germanides for long-wavelength infrared plasmonics Frontiers in Optics, Fio 2014. DOI: 10.1364/Fio.2014.Ftu1E.5  0.68
2014 Tassev V, Snure M, Vangala S, Kimani M, Peterson R, Schunemann P. Growth and study of nonlinear optical materials for frequency conversion devices with applications in defence and security Proceedings of Spie - the International Society For Optical Engineering. 9253. DOI: 10.1117/12.2067345  1
2014 Vangala S, Tassev V, Kimani M, Snure M, Mann M, Peterson R. Development of thick orientation patterned GaP for frequency conversion in the Mid IR and THz region International Conference On Infrared, Millimeter, and Terahertz Waves, Irmmw-Thz. DOI: 10.1109/IRMMW-THz.2014.6956104  1
2014 Inampudi S, Adams DC, Ribaudo T, Slocum D, Vangala S, Goodhue WD, Wasserman D, Podolskiy VA. ε -Near-zero enhanced light transmission through a subwavelength slit Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/Physrevb.89.125119  1
2013 Vangala S, Vella J, Donoghue J, Khoury J. Plasmonic modulator and its operating metrics Optics Infobase Conference Papers. DOI: 10.1364/Fio.2013.Ftu2E.4  0.64
2013 Vella JH, Vangala S, Donoghue J, Davis A, Khoury J. Ultracompact, plasmonic optical modulator for terahertz radiation Optics Infobase Conference Papers. DOI: 10.1364/Fio.2013.Ftu2E.3  0.64
2013 Cleary JW, Esfahani NN, Vangala S, Guo J, Hendrickson JR, Leedy KD, Thomson D, Look DC. Long-wavelength infrared surface plasmons on Ga-doped ZnO films excited via 2D hole arrays for extraordinary optical transmission Proceedings of Spie - the International Society For Optical Engineering. 8809. DOI: 10.1117/12.2022278  1
2013 Tassev V, Snure M, Peterson R, Schepler KL, Bedford R, Mann M, Vangala S, Goodhue W, Lin A, Harris J, Fejer M, Schunemann P. Progress in orientation-patterned GaP for next-generation nonlinear optical devices Proceedings of Spie - the International Society For Optical Engineering. 8604. DOI: 10.1117/12.2008057  1
2013 Grzesik M, Vangala SR, Goodhue WD. Indirect wafer bonding and epitaxial transfer of GaSb-based materials Journal of Electronic Materials. 42: 679-683. DOI: 10.1007/s11664-012-2397-7  1
2013 Tassev V, Snure M, Peterson R, Schepler K, Bedford R, Mann M, Vangala S, Goodhue W, Lin A, Harris J, Fejer M, Schunemann P. Recent progress in development orientation-patterned GaP for next-generation frequency conversion devices Cleo: Qels_fundamental Science, Cleo:Qels Fs 2013. JM4K.5.  1
2013 Tassev V, Snure M, Peterson R, Schepler K, Bedford R, Mann M, Vangala S, Goodhue W, Lin A, Harris J, Fejer M, Schunemann P. Recent progress in development orientation-patterned GaP for next-generation frequency conversion devices Cleo: Qels_fundamental Science, Cleo:Qels Fs 2013 1
2012 Vangala S, Donoghue J, Davis A, Khoury J. Plasmonic modulator via interfacing between a metallic layer and a photoconductive substrate Frontiers in Optics, Fio 2012. DOI: 10.1364/Fio.2012.Ftu3A.63  1
2012 Khoury J, Vangala S, Davis A, Kiersted J, Dennis W. Nano wiggler for wide-range tunable laser applications Frontiers in Optics, Fio 2012. DOI: 10.1364/Fio.2012.Fth4D.7  1
2012 Vangala S, Donoghue J, Davis A, Khoury J. Plasmonic modulator via interfacing between a metallic layer and an electro-optic material Frontiers in Optics, Fio 2012. DOI: 10.1364/Fio.2012.Fth4A.3  1
2012 Qian X, Chandrayan N, Vangala SR, Goodhue WD, Danylov AA, Waldman J, Baird C, Giles RH, Nixon WE. One-half milliwatt 2.31 THz continuous-wave QCL operating at 77K Proceedings of Spie - the International Society For Optical Engineering. 8261. DOI: 10.1117/12.906732  1
2012 Goodhue WG, Reeder RE, Vineis CJ, Calawa SD, Dauplaise HM, Vangala S, Walsh MP, Harman TC. High-output-power densities from molecular beam epitaxy grown n- and p-type PbTeSe-based thermoelectrics via improved contact metallization Journal of Applied Physics. 111. DOI: 10.1063/1.4712425  1
2012 Lynch C, Bliss DF, Snure M, Tassev V, Bryant G, Yapp C, Fenner DB, Allen MG, Termkoa K, Li J, Vangala S, Goodhue W. Thick orientation-patterned GaAs grown by low-pressure HVPE on fusion-bonded templates Journal of Crystal Growth. 353: 152-157. DOI: 10.1016/J.Jcrysgro.2012.05.025  1
2012 Tassev V, Snure M, Peterson R, Bedford R, Bliss D, Bryant G, Mann M, Goodhue W, Vangala S, Termkoa K, Lin A, Harris JS, Fejer MM, Yapp C, Tetlak S. Epitaxial growth of quasi-phase matched GaP for nonlinear applications: Systematic process improvements Journal of Crystal Growth. 352: 72-77. DOI: 10.1016/J.Jcrysgro.2011.12.077  1
2011 Adams DC, Inampudi S, Ribaudo T, Slocum D, Vangala S, Kuhta NA, Goodhue WD, Podolskiy VA, Wasserman D. Funneling light through a subwavelength aperture with epsilon-near-zero materials. Physical Review Letters. 107: 133901. PMID 22026854 DOI: 10.1103/Physrevlett.107.133901  1
2011 Vaillancourt J, Vasinajindakaw P, Lu X, Qian X, Vangala SR, Goodhue WD. Thermo-electrically cooled shortwave infrared and longwave infrared dualband quantum-dot photodetector Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.887363  1
2011 Vasinajindakaw P, Lu X, Qian X, Vangala SR, Goodhue W. High operating temperature (HOT) broadband quantum-dot photodetector Proceedings of Spie - the International Society For Optical Engineering. 8012. DOI: 10.1117/12.887362  1
2011 Tassev V, Snure M, Peterson R, Bliss D, Bryant G, Goodhue W, Vangala S, Termkoa K, Lin A, Harris JS, Fejer MM, Yapp C. Fast epitaxial growth of thick quasi-phase matched GaP for applications in the MIR and THz: Determination of the optimal substrate and pattern orientation Irmmw-Thz 2011 - 36th International Conference On Infrared, Millimeter, and Terahertz Waves. DOI: 10.1109/irmmw-THz.2011.6105245  1
2011 Termkoa K, Vangala S, Goodhue W, Peterson R, Bedford R, Tassev V, Lynch C, Bliss D. Production of orientation-patterned GaP templates using wafer fusion techniques Optical Materials. 34: 30-35. DOI: 10.1016/J.Optmat.2011.07.021  1
2011 Slocum D, Adams DC, Inampudi S, Vangala S, Goodhue WD, Podolskiy VA, Wasserman D. Funneling light through a subwavelength aperture using epsilon-near-zero materials Optics Infobase Conference Papers 1
2011 Slocum D, Adams DC, Inampudi S, Vangala S, Goodhue WD, Podolskiy VA, Wasserman D. Funneling light through a subwavelength aperture using epsilon-near-zero materials Optics Infobase Conference Papers 1
2011 Inampudi S, Slocum D, Adams DC, Vangala S, Goodhue WD, Wasserman D, Podolskiy VA. ENZ-enhanced transmission through subwavelength slits Optics Infobase Conference Papers 1
2011 Inampudi S, Slocum D, Adams DC, Vangala S, Goodhue WD, Wasserman D, Podolskiy VA. ENZ-enhanced transmission through subwavelength slits Optics Infobase Conference Papers 1
2011 Inampudi S, Slocum D, Adams DC, Vangala S, Goodhue WD, Wasserman D, Podolskiy VA. ENZ-enhanced transmission through subwavelength slits Optics Infobase Conference Papers 1
2010 Danylov AA, Goyette TM, Waldman J, Coulombe MJ, Gatesman AJ, Giles RH, Qian X, Chandrayan N, Vangala S, Termkoa K, Goodhue WD, Nixon WE. Terahertz inverse synthetic aperture radar (ISAR) imaging with a quantum cascade laser transmitter. Optics Express. 18: 16264-72. PMID 20721012 DOI: 10.1364/Oe.18.016264  1
2010 Hong W, Vasinajindakaw P, Vaillancourt J, Zhang H, Gu G, Liu R, Lu X, Qian X, Vangala SR, Goodhue WD. Multispectral infrared photodetector with carbon nanotube flexible electronic circuits Proceedings of Spie - the International Society For Optical Engineering. 7679. DOI: 10.1117/12.850701  1
2010 Vaillancourt J, Vasinajindakaw P, Hong W, Lu X, Qian X, Vangala SR, Goodhue WD. A LWIR quantum dot infrared photodetector working at 298K Proceedings of Spie - the International Society For Optical Engineering. 7608. DOI: 10.1117/12.847081  1
2010 Danylov AA, Goyette TM, Waldman J, Coulombe MJ, Gatesman AJ, Giles RH, Qian X, Chandrayan N, Vangala S, Termkoa K, Goodhue WD, Nixon WE. Coherent imaging at 2.4 THz with a CW quantum cascade laser transmitter Proceedings of Spie - the International Society For Optical Engineering. 7601. DOI: 10.1117/12.843197  1
2010 Ribaudo T, Passmore BS, Adams DC, Qian X, Vangala S, Goodhue WD, Shaner EA, Lyon SA, Wasserman D. Mid-infrared emitters utilizing intersublevel transitions in self assembled InAs quantum dots Proceedings of Spie - the International Society For Optical Engineering. 7616. DOI: 10.1117/12.843033  1
2010 Qian X, Vangala S, Wasserman D, Goodhue WD. High-optical-quality nanosphere lithographically formed InGaAs quantum dots using molecular beam epitaxy assisted GaAs mass transport and overgrowth Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C3C9-C3C14. DOI: 10.1116/1.3273941  1
2010 Mathur V, Vangala SR, Qian X, Goodhue WD, Haji-Saeed B, Khoury J. An all optically driven integrated deformable mirror device Applied Physics Letters. 96. DOI: 10.1063/1.3430568  1
2010 Miao X, Passmore B, Gin A, Langston W, Vangala S, Goodhue W, Shaner E, Brener I. Doping tunable resonance: Toward electrically tunable mid-infrared metamaterials Applied Physics Letters. 96. DOI: 10.1063/1.3309707  1
2009 Passmore BS, Allen DG, Vangala SR, Goodhue WD, Wasserman D, Shaner EA. Mid-infrared doping tunable transmission through subwavelength metal hole arrays on InSb. Optics Express. 17: 10223-30. PMID 19506676 DOI: 10.1364/Oe.17.010223  1
2009 Miao X, Passmore B, Gin A, Vangala S, Goodhue W, Shaner E, Brener I. Doping-Tunable Metamaterials in the Mid-Infrared Optics Infobase Conference Papers. DOI: 10.1364/Fio.2009.Pdpb8  1
2009 Flint P, Allen LP, Dallas G, Ruchert BD, Bakken D, Blanchat K, Vangala SR, Goodhue WD, Bliss D, Dauplais H. Cmp process comparison for 150mm larger area insb (111)B focal plane array substrates Proceedings of Spie - the International Society For Optical Engineering. 7487. DOI: 10.1117/12.830114  1
2009 Allen LP, Flint P, Dallas G, Bakken D, Blanchat K, Brown GJ, Vangala SR, Goodhue WD, Krishnaswami K. GaSb substrates with extended IR wavelength for advanced space based applications Proceedings of Spie - the International Society For Optical Engineering. 7298. DOI: 10.1117/12.817858  1
2009 Mathur V, Vangala SR, Qian X, Goodhue WD, Haji-Saeed B, Khoury J. All optically driven MEMS deformable mirrors via direct cascading with wafer bonded GaAs/GaP PIN photodetectors 2009 Ieee/Leos International Conference On Optical Mems and Nanophotonics, Optmems 2009. 156-157. DOI: 10.1109/OMEMS.2009.5338614  1
2008 Krishnaswami K, Vangala SR, Dauplaise HM, Allen LP, Dallas G, Bakken D, Bliss DF, Goodhue WD. Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces Journal of Crystal Growth. 310: 1619-1626. DOI: 10.1016/J.Jcrysgro.2007.11.225  1
2007 Allen LP, Dallas G, Blanchet K, Vangala SR, Santeufemio C, Goodhue WD, Roehl E, Jones CE, Barton J, Zide B, Difilippo V, Jones KS. Successful MWIR FPA fabrication using gas cluster ion-beam InSb surface finishing 65423P Proceedings of Spie - the International Society For Optical Engineering. 6542. DOI: 10.1117/12.718185  1
2007 Li J, Qian X, Liu W, Vangala SR, Goodhue WD, Danylov AA, Waldman J, Giles RH, Linden KJ. 2.4-2.5 THz quantum cascade lasers obtained by tuning the thicknesses of a structure emitting at 2.9 THz Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 860-861. DOI: 10.1109/LEOS.2007.4382680  1
2007 Vangala SR, Dauplaise H, Santeufemio C, Lynch C, Alcorn P, Allen LP, Dallas G, Vaccaro K, Bliss D, Goodhue WD. Atomic hydrogen cleaning of epiready InSb (100), (111)B, and GCIB processed InSb (111)B surfaces 2007 International Conference On Compound Semiconductor Manufacturing Technology, Cs Mantech 2007. 113-116.  1
2006 Vangala SR, Qian X, Grzesik M, Santeufemio C, Goodhue WD, Allen LP, Dallas G, Dauplaise H, Vaccaro K, Wang SQ, Bliss D. Molecular beam epitaxy and morphological studies of homoepitaxial layers on chemical mechanical polished InSb(100) and InSb (111) B substrates Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1634-1638. DOI: 10.1116/1.2190669  1
2005 Krishnaswami K, Fenner DB, Vangala SR, Santeufemio C, Grzesik M, Allen LP, Dallas G, Goodhue WD. Roughness analysis of episurfaces grown on ion-beam processed GaSb substrates Materials Research Society Symposium Proceedings. 829: 273-278. DOI: 10.1557/Proc-829-B6.3  1
2005 Vangala SR, Allen LP, Difilippo V, Santeufemio C, Li J, Qian X, Park Y, Krishnaswami K, Zhu B, Dallas G, Bliss D, Dauplaise H, Jones KS, Goodhue WD. HBr-based gas cluster ion beam smoothing as a final polish for the production of MBE-epi-ready GaSb wafers 2005 International Conference On Compound Semiconductor Manufacturing Technology 1
2004 Krishnaswami K, Vangala SR, Zhu B, Goodhue WD, Allen LP, Santeufemio C, Liu X, Ospina MC, Whitten J, Sung C, Dauplaise H, Bliss D, Dallas G, Bakken D, Jones KS. Epitaxial growth on gas cluster ion-beam processed GaSb substrates using molecular-beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 1455-1459.  1
2003 Vangala SR, Krejca B, Krishnaswami K, Dauplaise H, Qian X, Zhu B, Ospina M, Sung C, Vaccaro K, Bliss D, Goodhue WD. Preparation and patterning of GaSb surfaces with Br-IBAE for antimonide based molecular beam epitaxy Materials Research Society Symposium - Proceedings. 792: 569-574. DOI: 10.1557/Proc-792-R9.2  1
2003 Krejca B, Vangala SR, Krishnaswami K, Kolluru R, Ospina MC, Sung C, Goodhue WD. Fabrication of nanotips and microbeams in antimonide based semiconductor material using bromine ion beam assisted etching Materials Research Society Symposium - Proceedings. 792: 309-314. DOI: 10.1557/Proc-792-R7.7  1
2003 Krishnaswami K, Vangala SR, Krejca B, Allen LP, Santeufemio C, Dauplaise H, Liu X, Whitten J, Ospina M, Sung C, Bliss D, Goodhue WD. Gas cluster ion beam processing of GaSb and InSb surfaces Materials Research Society Symposium - Proceedings. 792: 617-622. DOI: 10.1557/Proc-792-R10.7  1
2003 Krishnaswami K, Krejca B, Vangala SR, Santeufemio C, Allen LP, Ospina M, Liu X, Sung C, Vaccaro K, Goodhue WD. Determination of nano fluctuations in surface oxides of GaSb with Br-IBAE Materials Research Society Symposium - Proceedings. 786: 329-334. DOI: 10.1557/Proc-786-E3.20  1
2003 Ospina M, Vangala SR, Yang D, Sherwood JA, Sung C, Goodhue WD. Micromechanical characterization of GaSb by microbeam deflecion and using nanoprobe and finite element analysis Materials Research Society Symposium - Proceedings. 782: 173-178. DOI: 10.1557/Proc-782-A5.14  1
2003 Ospina M, Vangala S, Goodhue WD, Sung C. Tip shape deconvolution of InSb/GaSb ion beam assisted etched substrates by AFM Microscopy and Microanalysis. 9: 1242-1243. DOI: 10.1017/S1431927603446217  1
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