Arthur C. Gossard - Publications

Affiliations: 
University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Condensed Matter Physics

217 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Camenzind LC, Yu L, Stano P, Zimmerman JD, Gossard AC, Loss D, Zumbühl DM. Spectroscopy of Quantum Dot Orbitals with In-Plane Magnetic Fields. Physical Review Letters. 122: 207701. PMID 31172765 DOI: 10.1103/PhysRevLett.122.207701  0.64
2018 Valovcin DC, Banks HB, Mack S, Gossard AC, West K, Pfeiffer L, Sherwin MS. Optical frequency combs from high-order sideband generation. Optics Express. 26: 29807-29816. PMID 30469939  0.48
2018 Camenzind LC, Yu L, Stano P, Zimmerman JD, Gossard AC, Loss D, Zumbühl DM. Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot. Nature Communications. 9: 3454. PMID 30150721 DOI: 10.1038/s41467-018-05879-x  0.64
2015 Regensburger S, Mittendorff M, Winnerl S, Lu H, Gossard AC, Preu S. Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors. Optics Express. 23: 20732-42. PMID 26367925  0.48
2015 Kuznetsova YY, Andreakou P, Hasling MW, Leonard JR, Calman EV, Butov LV, Hanson M, Gossard AC. Two-dimensional snowflake trap for indirect excitons. Optics Letters. 40: 589-92. PMID 25680157 DOI: 10.1364/OL.40.000589  0.64
2015 Mohammed AM, Koh YR, Vermeersch B, Lu H, Burke PG, Gossard AC, Shakouri A. Fractal Lévy Heat Transport in Nanoparticle Embedded Semiconductor Alloys. Nano Letters. 15: 4269-73. PMID 25654652 DOI: 10.1021/nl5044665  0.48
2015 Yoneda J, Otsuka T, Takakura T, Pioro-Ladrière M, Brunner R, Lu H, Nakajima T, Obata T, Noiri A, Palmstrøm CJ, Gossard AC, Tarucha S. Robust micromagnet design for fast electrical manipulations of single spins in quantum dots Applied Physics Express. 8. DOI: 10.7567/APEX.8.084401  0.64
2015 Regensburger S, Mittendorff M, Winnerl S, Lu H, Gossard AC, Preu S. Broadband THz detection from 0.1 to 22THz with large area field-effect transistors Optics Express. 23: 20732-20742. DOI: 10.1364/OE.23.020732  0.48
2015 Wistey MA, Baraskar AK, Singisetti U, Burek GJ, Shin B, Kim E, McIntyre PC, Gossard AC, Rodwell MJW. Control of InGaAs and InAs facets using metal modulation epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4905497  0.48
2015 Ziabari A, Bahk JH, Xuan Y, Ye PD, Kendig D, Yazawa K, Burke PG, Lu H, Gossard AC, Shakouri A. Sub-diffraction limit thermal imaging for HEMT devices Annual Ieee Semiconductor Thermal Measurement and Management Symposium. 2015: 82-87. DOI: 10.1109/SEMI-THERM.2015.7100144  0.48
2015 Liu AY, Herrick RW, Ueda O, Petroff PM, Gossard AC, Bowers JE. Reliability of InAs/GaAs quantum dot lasers epitaxially grown on silicon Ieee Journal On Selected Topics in Quantum Electronics. 21. DOI: 10.1109/JSTQE.2015.2418226  0.64
2015 Regensburger S, Mittendorff M, Winnerl S, Lu H, Gossard AC, Preu S. Symmetry effects in broadband, room-temperature field effect transistor THz detectors Irmmw-Thz 2015 - 40th International Conference On Infrared, Millimeter, and Terahertz Waves. DOI: 10.1109/IRMMW-THz.2015.7327721  0.64
2015 Chow WW, Liu AY, Gossard AC, Bowers JE, Jahnke F. Gain-current relationships in quantum-dot and quantum-well lasers: Theory and experiment 2015 Ieee Photonics Conference, Ipc 2015. 569-570. DOI: 10.1109/IPCon.2015.7323527  0.64
2015 Huang CY, Lee S, Chobpattana V, Stemmer S, Gossard AC, Thibeault B, Mitchell W, Rodwell M. Low Power III-V InGaAs MOSFETs featuring InP recessed source/drain spacers with Ion=120 μa/μm at Ioff=1 nA/μm and VDS=0.5 v Technical Digest - International Electron Devices Meeting, Iedm. 2015: 25.4.1-25.4.4. DOI: 10.1109/IEDM.2014.7047107  0.48
2015 Rodwell MJW, Huang CY, Rode J, Choudhary P, Lee S, Gossard AC, Long P, Wilson E, Mehrotra S, Povolotskyi M, Klimeck G, Urteaga M, Brar B, Chobpattanna V, Stemmer S. Transistors for VLSI, for wireless: A view forwards through fog Device Research Conference - Conference Digest, Drc. 2015: 19-20. DOI: 10.1109/DRC.2015.7175529  0.48
2015 Biesinger DEF, Scheller CP, Braunecker B, Zimmerman J, Gossard AC, Zumbühl DM. Intrinsic Metastabilities in the Charge Configuration of a Double Quantum Dot Physical Review Letters. 115. DOI: 10.1103/PhysRevLett.115.106804  0.64
2015 Remeika M, Leonard JR, Dorow CJ, Fogler MM, Butov LV, Hanson M, Gossard AC. Measurement of exciton correlations using electrostatic lattices Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/PhysRevB.92.115311  0.64
2015 Yang S, Butov LV, Simons BD, Campman KL, Gossard AC. Fluctuation and commensurability effect of exciton density wave Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/PhysRevB.91.245302  0.64
2015 Andreakou P, Cronenberger S, Scalbert D, Nalitov A, Gippius NA, Kavokin AV, Nawrocki M, Leonard JR, Butov LV, Campman KL, Gossard AC, Vladimirova M. Nonlinear optical spectroscopy of indirect excitons in coupled quantum wells Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/PhysRevB.91.125437  0.64
2015 Hornibrook JM, Colless JI, Conway Lamb ID, Pauka SJ, Lu H, Gossard AC, Watson JD, Gardner GC, Fallahi S, Manfra MJ, Reilly DJ. Cryogenic control architecture for large-scale quantum computing Physical Review Applied. 3. DOI: 10.1103/PhysRevApplied.3.024010  0.64
2015 Chow WW, Liu AY, Gossard AC, Bowers JE. Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers Applied Physics Letters. 107. DOI: 10.1063/1.4934838  0.64
2015 Burke PG, Curtin BM, Bowers JE, Gossard AC. Minority carrier barrier heterojunctions for improved thermoelectric efficiency Nano Energy. 12: 735-741. DOI: 10.1016/j.nanoen.2015.01.037  0.36
2014 Yoneda J, Otsuka T, Nakajima T, Takakura T, Obata T, Pioro-Ladrière M, Lu H, Palmstrøm CJ, Gossard AC, Tarucha S. Fast electrical control of single electron spins in quantum dots with vanishing influence from nuclear spins. Physical Review Letters. 113: 267601. PMID 25615383 DOI: 10.1103/PhysRevLett.113.267601  0.64
2014 Berry CW, Hashemi MR, Preu S, Lu H, Gossard AC, Jarrahi M. Plasmonics enhanced photomixing for generating quasi-continuous-wave frequency-tunable terahertz radiation. Optics Letters. 39: 4522-4. PMID 25078218 DOI: 10.1364/OL.39.004522  0.64
2014 Wang H, Bahk JH, Kang C, Hwang J, Kim K, Kim J, Burke P, Bowers JE, Gossard AC, Shakouri A, Kim W. Right sizes of nano- and microstructures for high-performance and rigid bulk thermoelectrics. Proceedings of the National Academy of Sciences of the United States of America. 111: 10949-54. PMID 25028497 DOI: 10.1073/pnas.1403601111  0.36
2014 Colless JI, Croot XG, Stace TM, Doherty AC, Barrett SD, Lu H, Gossard AC, Reilly DJ. Raman phonon emission in a driven double quantum dot. Nature Communications. 5: 3716. PMID 24759675 DOI: 10.1038/ncomms4716  0.64
2014 Higginbotham AP, Kuemmeth F, Hanson MP, Gossard AC, Marcus CM. Coherent operations and screening in multielectron spin qubits. Physical Review Letters. 112: 026801. PMID 24484035 DOI: 10.1103/PhysRevLett.112.026801  0.64
2014 Lu H, Ouellette DG, Preu S, Watts JD, Zaks B, Burke PG, Sherwin MS, Gossard AC. Self-assembled ErSb nanostructures with optical applications in infrared and terahertz. Nano Letters. 14: 1107-12. PMID 24206535 DOI: 10.1021/nl402436g  0.64
2014 Liu AY, Zhang C, Snyder A, Lubyshev D, Fastenau JM, Liu AWK, Gossard AC, Bowers JE. MBE growth of P-doped 1.3 μ m InAs quantum dot lasers on silicon Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4864148  0.64
2014 Lee S, Chobpattana V, Huang CY, Thibeault BJ, Mitchell W, Stemmer S, Gossard AC, Rodwell MJW. Record Ion (0.50 mA/μm at VDD = 0.5 v and Ioff = 100 nA/μm) 25 nm-gate-length ZrO2/InAs/InAlAs MOSFETs Digest of Technical Papers - Symposium On Vlsi Technology. DOI: 10.1109/VLSIT.2014.6894363  0.64
2014 Liu AY, Zhang C, Snyder A, Lubychev D, Fastenau JM, Liu AWK, Gossard AC, Bowers JE. High performance 1.3μm InAs quantum dot lasers epitaxially grown on silicon Conference On Optical Fiber Communication, Technical Digest Series. DOI: 10.1109/OFC.2014.6887173  0.64
2014 Bowers JE, Bovington JT, Liu AY, Gossard AC. A path to 300 mm hybrid silicon photonic integrated circuits Conference On Optical Fiber Communication, Technical Digest Series. DOI: 10.1109/OFC.2014.6886644  0.64
2014 Lee S, Huang CY, Cohen-Elias D, Thibeault BJ, Mitchell W, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. Highly scalable raised source/drain InAs quantum well MOSFETs exhibiting ION = 482 μA/μm at IOFF = 100 nA/μm and V DD = 0.5 V Ieee Electron Device Letters. 35: 621-623. DOI: 10.1109/LED.2014.2317146  0.64
2014 Huang CY, Lee S, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. S5-H6: Leakage current suppression in InGaaS-channel MOSFETs: Recessed InP source/drain spacers and InP channel caps Lester Eastman Conference 2014 - High Performance Devices, Lec 2014. DOI: 10.1109/LEC.2014.6951570  0.64
2014 Berry CW, Hashemi MR, Preu S, Lu H, Gossard AC, Jarrahi M. High power terahertz generation from ErAs: InGaAs plasmonic photomixers International Conference On Infrared, Millimeter, and Terahertz Waves, Irmmw-Thz. DOI: 10.1109/IRMMW-THz.2014.6956155  0.64
2014 Liu AY, Zhang C, Gossard AC, Bowers JE. Quantum dot lasers on silicon Ieee International Conference On Group Iv Photonics Gfp. 205-206. DOI: 10.1109/Group4.2014.6961926  0.64
2014 Huang CY, Lee S, Elias DC, Law JJM, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. Influence of InP source/drain layers upon the DC characteristics of InAs/InGaAs MOSFETs Device Research Conference - Conference Digest, Drc. 225-226. DOI: 10.1109/DRC.2014.6872379  0.64
2014 Lee S, Huang CY, Elias DC, Thibeault BJ, Mitchell W, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. 35 nm-Lg raised S/D In0.53Ga0.47As quantum-well MOSFETs with 81 mV/decade subthreshold swing at VDS=0.5 v Device Research Conference - Conference Digest, Drc. 223-224. DOI: 10.1109/DRC.2014.6872378  0.64
2014 Rodwell MJW, Lee S, Huang CY, Elias D, Chobpattanna V, Rode J, Chiang HW, Choudhary P, Maurer R, Urteaga M, Brar B, Gossard AC, Stemmer S. Nanometer InP electron devices for VLSI and THz applications Device Research Conference - Conference Digest, Drc. 215-216. DOI: 10.1109/DRC.2014.6872374  0.64
2014 Berry CW, Hashemi MR, Jarrahi M, Preu S, Lu H, Gossard AC. Terahertz radiation enhancement through use of plasmonic photomixers Ieee Antennas and Propagation Society, Ap-S International Symposium (Digest). 1604-1605. DOI: 10.1109/APS.2014.6905128  0.64
2014 Staley NE, Ray N, Kastner MA, Hanson MP, Gossard AC. Electric-field-driven insulating-to-conducting transition in a mesoscopic quantum dot lattice Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/PhysRevB.90.195443  0.64
2014 Banks HB, Hofmann A, Mack S, Gossard AC, Sherwin MS. Antenna-boosted mixing of terahertz and near-infrared radiation Applied Physics Letters. 105. DOI: 10.1063/1.4894634  0.64
2014 Berry CW, Hashemi MR, Preu S, Lu H, Gossard AC, Jarrahi M. High power terahertz generation using 1550nm plasmonic photomixers Applied Physics Letters. 105. DOI: 10.1063/1.4890102  0.64
2014 Suen JY, Krogen PR, Preu S, Lu H, Gossard AC, Driscoll DC, Lubin PM. Measurement and modeling of ErAs:In0.53Ga0.47As nanocomposite photoconductivity for THz generation at 1.55 μ m pump wavelength Journal of Applied Physics. 116. DOI: 10.1063/1.4886180  0.64
2014 Scheller CP, Heizmann S, Bedner K, Giss D, Meschke M, Zumbühl DM, Zimmerman JD, Gossard AC. Silver-epoxy microwave filters and thermalizers for millikelvin experiments Applied Physics Letters. 104. DOI: 10.1063/1.4880099  0.64
2014 Huang CY, Law JJM, Lu H, Jena D, Rodwell MJW, Gossard AC. Two dimensional electron transport in modulation-doped In 0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells Journal of Applied Physics. 115. DOI: 10.1063/1.4869498  0.64
2014 Hornibrook JM, Colless JI, Mahoney AC, Croot XG, Blanvillain S, Lu H, Gossard AC, Reilly DJ. Frequency multiplexing for readout of spin qubits Applied Physics Letters. 104. DOI: 10.1063/1.4868107  0.64
2014 Andreakou P, Poltavtsev SV, Leonard JR, Calman EV, Remeika M, Kuznetsova YY, Butov LV, Wilkes J, Hanson M, Gossard AC. Optically controlled excitonic transistor Applied Physics Letters. 104. DOI: 10.1063/1.4866855  0.64
2014 Liu AY, Zhang C, Norman J, Snyder A, Lubyshev D, Fastenau JM, Liu AWK, Gossard AC, Bowers JE. High performance continuous wave 1.3 μ m quantum dot lasers on silicon Applied Physics Letters. 104. DOI: 10.1063/1.4863223  0.64
2014 Maradan D, Casparis L, Liu TM, Biesinger DEF, Scheller CP, Zumbühl DM, Zimmerman JD, Gossard AC. GaAs quantum dot thermometry using direct transport and charge sensing Journal of Low Temperature Physics. 175: 784-798. DOI: 10.1007/s10909-014-1169-6  0.64
2014 Bowers JE, Bovington JT, Liu AY, Gossard AC. A path to 300 mm hybrid silicon photonic integrated circuits Optical Fiber Communication Conference, Ofc 2014 0.64
2014 Kuznetsova YY, Calman EV, Butov LV, Campman KL, Gossard AC. Indirect excitons in high magnetic fields Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014.  0.64
2014 Berry CW, Hashemi MR, Preu S, Lu H, Gossard AC, Jarrahi M. Plasmonic photomixers for increased terahertz radiation powers at 1550 nm optical pump wavelength Optics Infobase Conference Papers 0.64
2014 Preu S, Lu H, Kawasaki JK, Ouellette DG, Palmstrom CJ, Sherwin MS, Gossard AC. THz spectroscopy of self-assembled ErSb nanowires Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014.  0.64
2014 Preu S, Lu H, Kawasaki JK, Ouellette DG, Palmstrom CJ, Sherwin MS, Gossard AC. THz spectroscopy of self-assembled ErSb nanowires Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014.  0.64
2014 Kuznetsova YY, Calman EV, Leonard JR, Butov LV, Campman KL, Gossard AC. Spin currents and polarization textures in optically created indirect excitons Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014.  0.64
2014 Kuznetsova YY, Calman EV, Leonard JR, Butov LV, Campman KL, Gossard AC. Spin currents and polarization textures in optically created indirect excitons Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014.  0.64
2013 Colless JI, Mahoney AC, Hornibrook JM, Doherty AC, Lu H, Gossard AC, Reilly DJ. Dispersive readout of a few-electron double quantum dot with fast RF gate sensors. Physical Review Letters. 110: 046805. PMID 25166190 DOI: 10.1103/PhysRevLett.110.046805  0.64
2013 High AA, Hammack AT, Leonard JR, Yang S, Butov LV, Ostatnický T, Vladimirova M, Kavokin AV, Liew TC, Campman KL, Gossard AC. Spin currents in a coherent exciton gas. Physical Review Letters. 110: 246403. PMID 25165944 DOI: 10.1103/PhysRevLett.110.246403  0.64
2013 Banks H, Zaks B, Yang F, Mack S, Gossard AC, Liu R, Sherwin MS. Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations. Physical Review Letters. 111: 267402. PMID 24483813 DOI: 10.1103/PhysRevLett.111.267402  0.64
2013 Medford J, Beil J, Taylor JM, Bartlett SD, Doherty AC, Rashba EI, DiVincenzo DP, Lu H, Gossard AC, Marcus CM. Self-consistent measurement and state tomography of an exchange-only spin qubit. Nature Nanotechnology. 8: 654-9. PMID 23995458 DOI: 10.1038/nnano.2013.168  0.64
2013 Medford J, Beil J, Taylor JM, Rashba EI, Lu H, Gossard AC, Marcus CM. Quantum-dot-based resonant exchange qubit. Physical Review Letters. 111: 050501. PMID 23952375 DOI: 10.1103/PhysRevLett.111.050501  0.64
2013 Preu S, Mittendorff M, Winnerl S, Lu H, Gossard AC, Weber HB. Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals Optics Express. 21: 17941-17950. PMID 23938666 DOI: 10.1364/OE.21.017941  0.64
2013 Kawasaki JK, Schultz BD, Lu H, Gossard AC, Palmstrøm CJ. Surface-mediated tunable self-assembly of single crystal semimetallic ErSb/GaSb nanocomposite structures. Nano Letters. 13: 2895-901. PMID 23701166 DOI: 10.1021/nl4012563  0.64
2013 Ribeiro H, Burkard G, Petta JR, Lu H, Gossard AC. Coherent adiabatic spin control in the presence of charge noise using tailored pulses. Physical Review Letters. 110: 086804. PMID 23473186 DOI: 10.1103/PhysRevLett.110.086804  0.64
2013 Huang CY, Law JJM, Lu H, Rodwell MJW, Gossard AC. Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs Materials Research Society Symposium Proceedings. 1561: 1-6. DOI: 10.1557/opl.2013.821  0.64
2013 Bauerschmidt ST, Döhler GH, Lu H, Gossard AC, Malzer S, Preu S. Arrayed free space continuous-wave terahertz photomixers Optics Letters. 38: 3673-3676. DOI: 10.1364/OL.38.003673  0.64
2013 Preu S, Regensburger S, Kim S, Mittendorff M, Winnerl S, Malzer S, Lu H, Burke PG, Gossard AC, Weber HB, Sherwin MS. Broadband THz detection and homodyne mixing using GaAs highelectron- Mobility transistor rectifiers Proceedings of Spie - the International Society For Optical Engineering. 8900. DOI: 10.1117/12.2029478  0.64
2013 Criado AR, De Dios C, Prior E, Döhler GH, Preu S, Malzer S, Lu H, Gossard AC, Acedo P. Continuous-wave sub-Thz photonic generation with ultra-narrow line width, ultra-high resolution, full frequency range coverage and high long-term frequency stability Ieee Transactions On Terahertz Science and Technology. 3: 461-471. DOI: 10.1109/TTHZ.2013.2260374  0.64
2013 Lee S, Huang CY, Carter AD, Law JJM, Elias DC, Chobpattana V, Thibeault BJ, Mitchell W, Stemmer S, Gossard AC, Rodwell MJW. High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching Conference Proceedings - International Conference On Indium Phosphide and Related Materials. DOI: 10.1109/ICIPRM.2013.6562630  0.64
2013 Carter AD, Lee S, Elias DC, Huang CY, Law JJM, Mitchell WJ, Thibeault BJ, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. Performance impact of post-regrowth channel etching on InGaAs MOSFETs having MOCVD source-drain regrowth Device Research Conference - Conference Digest, Drc. 23-24. DOI: 10.1109/DRC.2013.6633776  0.64
2013 Remeika M, Hammack AT, Poltavtsev S, Butov LV, Wilkes J, Ivanov AL, Campman KL, Hanson M, Gossard AC. Pattern formation in the exciton inner ring Cleo: Qels_fundamental Science, Cleo:Qels Fs 2013. DOI: 10.1103/PhysRevB.88.125307  0.64
2013 Lee S, Huang CY, Cohen-Elias D, Law JJM, Chobpattanna V, Krämer S, Thibeault BJ, Mitchell W, Stemmer S, Gossard AC, Rodwell MJW. High performance raised source/drain InAs/In0.53Ga 0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer Applied Physics Letters. 103. DOI: 10.1063/1.4838660  0.64
2013 Huang CY, Lee S, Cohen-Elias D, Law JJM, Carter AD, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. Reduction of leakage current in In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors using AlAs 0.56Sb0.44 confinement layers Applied Physics Letters. 103. DOI: 10.1063/1.4831683  0.64
2013 Baraskar A, Gossard AC, Rodwell MJW. Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data Journal of Applied Physics. 114. DOI: 10.1063/1.4826205  0.64
2013 Feser JP, Xu D, Lu H, Zhao Y, Shakouri A, Gossard AC, Majumdar A. Reduced thermal conductivity in Er-doped epitaxial InxGa 1-xSb alloys Applied Physics Letters. 103. DOI: 10.1063/1.4820151  0.64
2013 Law JJM, Carter AD, Lee S, Huang CY, Lu H, Rodwell MJW, Gossard AC. Co-doping of InxGa1-xAs with silicon and tellurium for improved ultra-low contact resistance Journal of Crystal Growth. 378: 92-95. DOI: 10.1016/j.jcrysgro.2012.12.122  0.64
2013 Remeika M, Hammack AT, Poltavtsev S, Butov LV, Wilkes J, Ivanov AL, Campman KL, Hanson M, Gossard AC. Pattern formation in the exciton inner ring Cleo: Qels_fundamental Science, Cleo:Qels Fs 2013 0.64
2013 Lee S, Huang CY, Carter AD, Elias DC, Law JJM, Chobpattana V, Kramer S, Thibeault BJ, Mitchell W, Stemmer S, Gossard AC, Rodwell MJW. Record extrinsic transconductance (2.45 mS/μm at VDS = 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth Digest of Technical Papers - Symposium On Vlsi Technology. T246-T247.  0.64
2013 Remeika M, Hammack AT, Poltavtsev S, Butov LV, Wilkes J, Ivanov AL, Campman KL, Hanson M, Gossard AC. Pattern formation in the exciton inner ring Cleo: Qels_fundamental Science, Cleo:Qels Fs 2013 0.64
2012 High AA, Leonard JR, Remeika M, Butov LV, Hanson M, Gossard AC. Reply to "comment on 'condensation of excitons in a trap'". Nano Letters. 12: 5422. PMID 22978516 DOI: 10.1021/nl302928v  0.64
2012 Preu S, Lu H, Sherwin MS, Gossard AC. Detection of nanosecond-scale, high power THz pulses with a field effect transistor. The Review of Scientific Instruments. 83: 053101. PMID 22667596 DOI: 10.1063/1.4705986  0.64
2012 High AA, Leonard JR, Remeika M, Butov LV, Hanson M, Gossard AC. Condensation of excitons in a trap. Nano Letters. 12: 2605-9. PMID 22509898 DOI: 10.1021/nl300983n  0.64
2012 Medford J, Cywi?ski ?, Barthel C, Marcus CM, Hanson MP, Gossard AC. Scaling of dynamical decoupling for spin qubits. Physical Review Letters. 108: 086802. PMID 22463554 DOI: 10.1103/PhysRevLett.108.086802  0.64
2012 High AA, Leonard JR, Hammack AT, Fogler MM, Butov LV, Kavokin AV, Campman KL, Gossard AC. Spontaneous coherence in a cold exciton gas. Nature. 483: 584-8. PMID 22437498 DOI: 10.1038/nature10903  0.64
2012 Preu S, Kim S, Verma R, Burke PG, Vinh NQ, Sherwin MS, Gossard AC. Terahertz detection by a homodyne field effect transistor multiplicative mixer Ieee Transactions On Terahertz Science and Technology. 2: 278-283. DOI: 10.1109/TTHZ.2012.2191671  0.64
2012 Lee S, Law JJM, Carter AD, Thibeault BJ, Mitchell W, Chobpattana V, Krämer S, Stemmer S, Gossard AC, Rodwell MJW. Substitutional-gate MOSFETs with composite (In 0.53Ga 0.47As/InAs In 0.53Ga 0.47As) channels and self-aligned MBE source-drain regrowth Ieee Electron Device Letters. 33: 1553-1555. DOI: 10.1109/LED.2012.2215572  0.64
2012 Baraskar A, Gossard AC, Rodwell MJW. Lower limits to specific contact resistivity Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 196-199. DOI: 10.1109/ICIPRM.2012.6403356  0.64
2012 Lee S, Carter AD, Law JJM, Elias DC, Chobpattana V, Hong Lu, Thibeault BJ, Mitchell W, Stemmer S, Gossard AC, Rodwell MJW. High performance substitutional-gate MOSFETs using MBE source-drain regrowth and scaled gate oxides Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 155-158. DOI: 10.1109/ICIPRM.2012.6403345  0.64
2012 Andres-Garcia B, Garcia-Muñoz LE, Segovia-Vargas D, Bauerschmidt S, Döhler G, Preu S, Malzer S, Lu H, Gossard AC. High power terahertz photomixer arrays Proceedings of 6th European Conference On Antennas and Propagation, Eucap 2012. 1007-1010. DOI: 10.1109/EuCAP.2012.6206195  0.64
2012 Law JJM, Carter AD, Lee S, Gossard AC, Rodwell MJW. Regrown ohmic contacts to In xGa 1-xAs approaching the quantum conductivity limit Device Research Conference - Conference Digest, Drc. 199-200. DOI: 10.1109/DRC.2012.6257010  0.64
2012 Rodwell MJW, Rode J, Chiang HW, Choudhary P, Reed T, Bloch E, Danesgar S, Park HC, Gossard AC, Thibeault BJ, Mitchell W, Urteaga M, Griffith Z, Hacker J, Seo M, et al. THz indium phosphide bipolar transistor technology Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2012.6340091  0.64
2012 Stehlik J, Dovzhenko Y, Petta JR, Johansson JR, Nori F, Lu H, Gossard AC. Landau-Zener-Stückelberg interferometry of a single electron charge qubit Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/PhysRevB.86.121303  0.64
2012 Kuznetsova YY, Leonard JR, Butov LV, Wilkes J, Muljarov EA, Campman KL, Gossard AC. Excitation energy dependence of the exciton inner ring Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/PhysRevB.85.165452  0.64
2012 Barthel C, Medford J, Bluhm H, Yacoby A, Marcus CM, Hanson MP, Gossard AC. Relaxation and readout visibility of a singlet-triplet qubit in an Overhauser field gradient Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/PhysRevB.85.035306  0.64
2012 Burke PG, Ismer L, Lu H, Frantz E, Janotti A, Van De Walle CG, Bowers JE, Gossard AC. Electrically active Er doping in InAs, In0.53Ga 0.47As, and GaAs Applied Physics Letters. 101. DOI: 10.1063/1.4769248  0.64
2012 Blanvillain S, Colless JI, Reilly DJ, Lu H, Gossard AC. Suppressing on-chip electromagnetic crosstalk for spin qubit devices Journal of Applied Physics. 112. DOI: 10.1063/1.4752863  0.64
2012 Preu S, Mittendorff M, Lu H, Weber HB, Winnerl S, Gossard AC. 1550 nm ErAs:In(Al)GaAs large area photoconductive emitters Applied Physics Letters. 101. DOI: 10.1063/1.4750244  0.64
2012 Leonard JR, Remeika M, Kuznetsova YY, High AA, Butov LV, Hanson M, Gossard AC. Transport of indirect excitons in a potential energy gradient 2012 Conference On Lasers and Electro-Optics, Cleo 2012. DOI: 10.1063/1.4722938  0.64
2012 Clinger LE, Pernot G, Buehl TE, Burke PG, Gossard AC, Palmstrom CJ, Shakouri A, Zide JMO. Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites Journal of Applied Physics. 111. DOI: 10.1063/1.4711095  0.64
2012 Dyer GC, Preu S, Aizin GR, Mikalopas J, Grine AD, Reno JL, Hensley JM, Vinh NQ, Gossard AC, Sherwin MS, Allen SJ, Shaner EA. Enhanced performance of resonant sub-terahertz detection in a plasmonic cavity Applied Physics Letters. 100. DOI: 10.1063/1.3687698  0.64
2012 Remeika M, Fogler MM, Butov LV, Hanson M, Gossard AC. Two-dimensional electrostatic lattices for indirect excitons Applied Physics Letters. 100. DOI: 10.1063/1.3682302  0.64
2012 Preu S, Kim S, Verma R, Burke PG, Sherwin MS, Gossard AC. An improved model for non-resonant terahertz detection in field-effect transistors Journal of Applied Physics. 111. DOI: 10.1063/1.3676211  0.64
2012 Criado AR, De Dios C, Döhler GH, Preu S, Malzer S, Bauerschmidt S, Lu H, Gossard AC, Acedo P. Ultra-narrow linewidth CW sub-THz generation using GS based OFCG and n-i-pn-i-p superlattice photomixers Electronics Letters. 48: 1425-1426. DOI: 10.1049/el.2012.3158  0.64
2012 Burke PG, Buehl TE, Gilles P, Lu H, Shakouri A, Palmstrom CJ, Bowers JE, Gossard AC. Controlling n-type carrier density from Er doping of InGaAs with MBE growth temperature Journal of Electronic Materials. 41: 948-953. DOI: 10.1007/s11664-012-2050-5  0.64
2012 Remeika M, Fogler MM, Butov LV, Hanson M, Gossard AC. Electrostatic lattices for indirect excitons in coupled quantum wells 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.64
2012 Preu S, Kim S, Burke PG, Sherwin MS, Gossard AC. Multiplicative mixing and detection of THz signals with a field effect transistor 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.64
2012 High AA, Leonard JR, Remeika M, Butov LV, Hanson M, Gossard AC. Spontaneous coherence of indirect excitons in a trap 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.64
2012 Leonard JR, Remeika M, Kuznetsova YY, High AA, Butov LV, Hanson M, Gossard AC. Transport of indirect excitons in a potential energy gradient Optics Infobase Conference Papers 0.64
2012 High AA, Leonard JR, Hammack AT, Fogler MM, Butov LV, Kavokin AV, Campman KL, Gossard AC. Spontaneous coherence in a cold exciton gas 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.64
2012 Remeika M, Fogler MM, Butov LV, Hanson M, Gossard AC. Electrostatic lattices for indirect excitons in coupled quantumwells Optics Infobase Conference Papers 0.64
2012 Preu S, Kim S, Burke PG, Sherwin MS, Gossard AC. Multiplicative mixing and detection of THz signals with a field effect transistor 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.64
2012 High AA, Leonard JR, Remeika M, Butov LV, Hanson M, Gossard AC. Spontaneous coherence of indirect excitons in a trap Optics Infobase Conference Papers 0.64
2012 Leonard JR, Remeika M, Kuznetsova YY, High AA, Butov LV, Hanson M, Gossard AC. Transport of indirect excitons in a potential energy gradient Optics Infobase Conference Papers 0.64
2011 Trowbridge CJ, Norman BM, Stephens J, Gossard AC, Awschalom DD, Sih V. Electron spin polarization-based integrated photonic devices. Optics Express. 19: 14845-51. PMID 21934845  0.64
2011 van Weperen I, Armstrong BD, Laird EA, Medford J, Marcus CM, Hanson MP, Gossard AC. Charge-state conditional operation of a spin qubit. Physical Review Letters. 107: 030506. PMID 21838342 DOI: 10.1103/PhysRevLett.107.030506  0.64
2011 Lu H, Burke PG, Gossard AC, Zeng G, Ramu AT, Bahk JH, Bowers JE. Semimetal/semiconductor nanocomposites for thermoelectrics. Advanced Materials (Deerfield Beach, Fla.). 23: 2377-83. PMID 21751469  0.48
2011 Winbow AG, Leonard JR, Remeika M, Kuznetsova YY, High AA, Hammack AT, Butov LV, Wilkes J, Guenther AA, Ivanov AL, Hanson M, Gossard AC. Electrostatic conveyer for excitons. Physical Review Letters. 106: 196806. PMID 21668190 DOI: 10.1103/PhysRevLett.106.196806  0.64
2011 Burke PG, Lu H, Rudawski NG, Stemmer S, Gossard AC, Bahk JH, Bowers JE. Electrical properties of Er-doped In0.53Ga0.47As Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3559480  0.64
2011 Buschbeck J, Kawasaki J, Buehl TE, Gossard AC, Palmstrøm CJ. Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3556973  0.64
2011 Cassels LE, Buehl TE, Burke PG, Palmstrøm CJ, Gossard AC, Pernot G, Shakouri A, Haughn CR, Doty MF, Zide JMO. Growth and characterization of TbAs:GaAs nanocomposites Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3555388  0.64
2011 Buehl TE, Palmstrøm CJ, Gossard AC. Embedded ErAs nanorods on GaAs (n11) substrates by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3549888  0.64
2011 Kawasaki JK, Timm R, Buehl TE, Lundgren E, Mikkelsen A, Gossard AC, Palmstrøm CJ. Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3547713  0.64
2011 Nakamura S, Yamauchi Y, Hashisaka M, Chida K, Kobayashi K, Ono T, Leturcq R, Ensslin K, Saito K, Utsumi Y, Gossard AC. Experimental test of Fluctuation Theorem in a quantum coherent conductor Proceedings of the Ieee 21st International Conference On Noise and Fluctuations, Icnf 2011. 270-274. DOI: 10.1109/ICNF.2011.5994319  0.64
2011 Toledo NG, Cruz SC, Neufeld CJ, Lang JR, Scarpulla MA, Buehl T, Gossard AC, Denbaars SP, Speck JS, Mishra UK. Integrated non-III-nitride/III-nitride tandem solar cell Device Research Conference - Conference Digest, Drc. 265-266. DOI: 10.1109/DRC.2011.5994525  0.64
2011 Carter AD, Law JJM, Lobisser E, Burek GJ, Mitchell WJ, Thibeault BJ, Gossard AC, Rodwell MJW. 60 nm gate length Al2O3 / In0.53Ga 0.47As gate-first MOSFETs using InAs raised source-drain regrowth Device Research Conference - Conference Digest, Drc. 19-20. DOI: 10.1109/DRC.2011.5994402  0.64
2011 Dovzhenko Y, Stehlik J, Petersson KD, Petta JR, Lu H, Gossard AC. Nonadiabatic quantum control of a semiconductor charge qubit Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/PhysRevB.84.161302  0.64
2011 Sciambi A, Pelliccione M, Lilly MP, Bank SR, Gossard AC, Pfeiffer LN, West KW, Goldhaber-Gordon D. Vertical field-effect transistor based on wave-function extension Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/PhysRevB.84.085301  0.64
2011 Nakamura S, Yamauchi Y, Hashisaka M, Chida K, Kobayashi K, Ono T, Leturcq R, Ensslin K, Saito K, Utsumi Y, Gossard AC. Fluctuation theorem and microreversibility in a quantum coherent conductor Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/PhysRevB.83.155431  0.64
2011 Preu S, Dhler GH, Malzer S, Wang LJ, Gossard AC. Tunable, continuous-wave Terahertz photomixer sources and applications Journal of Applied Physics. 109. DOI: 10.1063/1.3552291  0.64
2011 Liu X, Ramu AT, Bowers JE, Palmstrøm CJ, Burke PG, Lu H, Gossard AC. Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectric applications Journal of Crystal Growth. 316: 56-59. DOI: 10.1016/j.jcrysgro.2010.09.078  0.64
2011 Preu S, Bauerschmidt S, Malzer S, Döhler GH, Lu H, Gossard AC, Wang LJ. Arrayed telecom-wavelength compatible THz n-i-pn-i-p superlattice photomixers for spectroscopy applications Nato Science For Peace and Security Series B: Physics and Biophysics. 139-146. DOI: 10.1007/978-94-007-0769-6-20  0.64
2010 Barthel C, Medford J, Marcus CM, Hanson MP, Gossard AC. Interlaced dynamical decoupling and coherent operation of a singlet-triplet qubit. Physical Review Letters. 105: 266808. PMID 21231704 DOI: 10.1103/PhysRevLett.105.266808  0.64
2010 Reilly DJ, Taylor JM, Petta JR, Marcus CM, Hanson MP, Gossard AC. Exchange control of nuclear spin diffusion in a double quantum dot. Physical Review Letters. 104: 236802. PMID 20867261 DOI: 10.1103/PhysRevLett.104.236802  0.64
2010 Zhao Z, Schwagmann A, Ospald F, Driscoll DC, Lu H, Gossard AC, Smet JH. Thickness dependence of the terahertz response in (110)-oriented GaAs crystals for electro-optic sampling at 1.55 microm. Optics Express. 18: 15956-63. PMID 20720979  0.48
2010 Kuznetsova YY, Remeika M, High AA, Hammack AT, Butov LV, Hanson M, Gossard AC. All-optical excitonic transistor. Optics Letters. 35: 1587-9. PMID 20479817 DOI: 10.1364/OL.35.001587  0.64
2010 Nakamura S, Yamauchi Y, Hashisaka M, Chida K, Kobayashi K, Ono T, Leturcq R, Ensslin K, Saito K, Utsumi Y, Gossard AC. Nonequilibrium fluctuation relations in a quantum coherent conductor. Physical Review Letters. 104: 080602. PMID 20366923 DOI: 10.1103/PhysRevLett.104.080602  0.64
2010 Zhao Z, Schwagmann A, Ospald F, Driscoll DC, Lu H, Gossard AC, Smet JH. Thickness dependence of the terahertz response in 〈110〉-oriented GaAs crystals for electro-optic sampling at 1.55 μm Optics Express. 18: 15956-15963. DOI: 10.1364/OE.18.015956  0.64
2010 Petta JR, Lu H, Gossard AC. A coherent beam splitter for electronic spin states Science. 327: 669-672. DOI: 10.1126/science.1183628  0.64
2010 Bauerschmidt S, Preu S, Malzer S, Döhler GH, Wang LJ, Lu H, Gossard AC. Continuous wave terahertz emitter arrays for spectroscopy and imaging applications Proceedings of Spie - the International Society For Optical Engineering. 7671. DOI: 10.1117/12.850090  0.64
2010 Zide JMO, Lu H, Onishi T, Schroeder JL, Bowers JE, Kobayashi NP, Sands TD, Gossard AC, Shakouri A. Novel metal/semiconductor nanocomposite and superlattice materials and devices for thermoelectrics Proceedings of Spie - the International Society For Optical Engineering. 7683. DOI: 10.1117/12.850058  0.64
2010 Xu D, Feser JP, Zhao Y, Lu H, Burke P, Gossard AC, Majumdar A. Thermal conductivity characterization and modeling of p-type metal/semiconductor nanocomposites 2010 14th International Heat Transfer Conference, Ihtc 14. 6: 525-529. DOI: 10.1115/IHTC14-23298  0.64
2010 Zhao ZY, Schwagmann A, Ospald F, Von Klitzing K, Smet JH, Driscoll DC, Hanson MP, Lu H, Gossard AC. 1.55 μm photoconductive THz emitters based on ErAs:In 0.53Ga0.47As superlattices 2010 Ieee Photonics Society Winter Topicals Meeting Series, Wtm 2010. 44-45. DOI: 10.1109/PHOTWTM.2010.5421971  0.64
2010 Rodwell MJW, Singisetti U, Wistey M, Burek GJ, Carter A, Baraskar A, Law J, Thibeault BJ, Kim EJ, Shin B, Lee YJ, Steiger S, Lee S, Ryu H, Tan Y, ... ... Gossard AC, et al. III-V MOSFETs: Scaling laws, scaling limits, fabrication processes Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 25-30. DOI: 10.1109/ICIPRM.2010.5515914  0.64
2010 Petersson KD, Petta JR, Lu H, Gossard AC. Quantum coherence in a one-electron semiconductor charge qubit Physical Review Letters. 105. DOI: 10.1103/PhysRevLett.105.246804  0.64
2010 Russell KJ, Capasso F, Narayanamurti V, Lu H, Zide JMO, Gossard AC. Scattering-assisted tunneling: Energy dependence, magnetic field dependence, and use as an external probe of two-dimensional transport Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/PhysRevB.82.115322  0.64
2010 Norman BM, Trowbridge CJ, Stephens J, Gossard AC, Awschalom DD, Sih V. Mapping spin-orbit splitting in strained (In,Ga)As epilayers Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/PhysRevB.82.081304  0.64
2010 Laird EA, Taylor JM, Divincenzo DP, Marcus CM, Hanson MP, Gossard AC. Coherent spin manipulation in an exchange-only qubit Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/PhysRevB.82.075403  0.64
2010 Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC. Probing semiconductor band structures and heterojunction interface properties with ballistic carrier emission: GaAs/ Alx Ga 1-x As as a model system Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/PhysRevB.81.235325  0.64
2010 Bahk JH, Bian Z, Zebarjadi M, Zide JMO, Lu H, Xu D, Feser JP, Zeng G, Majumdar A, Gossard AC, Shakouri A, Bowers JE. Thermoelectric figure of merit of ( In0.53 Ga0.47 As )0.8 ( In0.52 Al0.48 As ) 0.2 III-V semiconductor alloys Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/PhysRevB.81.235209  0.64
2010 Barthel C, Kjærgaard M, Medford J, Stopa M, Marcus CM, Hanson MP, Gossard AC. Fast sensing of double-dot charge arrangement and spin state with a radio-frequency sensor quantum dot Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/PhysRevB.81.161308  0.64
2010 Yang S, Butov LV, Levitov LS, Simons BD, Gossard AC. Exciton front propagation in photoexcited GaAs quantum wells Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/PhysRevB.81.115320  0.64
2010 Wilkes J, Mouchliadis L, Muljarov EA, Ivanov AL, Hammack AT, Butov LV, Gossard AC. Dynamics of the inner ring in photoluminescence of GaAs/AlGaAs indirect excitons Journal of Physics: Conference Series. 210. DOI: 10.1088/1742-6596/210/1/012050  0.64
2010 Preu S, Malzer S, Döhler GH, Lu H, Gossard AC, Wang LJ. Efficient III-V tunneling diodes with ErAs recombination centers Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/11/115004  0.64
2010 Zide JMO, Bahk JH, Singh R, Zebarjadi M, Zeng G, Lu H, Feser JP, Xu D, Singer SL, Bian ZX, Majumdar A, Bowers JE, Shakouri A, Gossard AC. High efficiency semimetal/semiconductor nanocomposite thermoelectric materials Journal of Applied Physics. 108. DOI: 10.1063/1.3514145  0.64
2010 Sciambi A, Pelliccione M, Bank SR, Gossard AC, Goldhaber-Gordon D. Virtual scanning tunneling microscopy: A local spectroscopic probe of two-dimensional electron systems Applied Physics Letters. 97. DOI: 10.1063/1.3492440  0.64
2010 Schwagmann A, Zhao ZY, Ospald F, Lu H, Driscoll DC, Hanson MP, Gossard AC, Smet JH. Terahertz emission characteristics of ErAs:InGaAs-based photoconductive antennas excited at 1.55 μm Applied Physics Letters. 96. DOI: 10.1063/1.3374401  0.64
2010 Buehl TE, Lebeau JM, Stemmer S, Scarpulla MA, Palmstrøm CJ, Gossard AC. Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy Journal of Crystal Growth. 312: 2089-2092. DOI: 10.1016/j.jcrysgro.2010.04.031  0.64
2010 Bahk JH, Zeng G, Zide JMO, Lu H, Singh R, Liang D, Ramu AT, Burke P, Bian Z, Gossard AC, Shakouri A, Bowers JE. High-temperature thermoelectric characterization of III-V semiconductor thin films by oxide bonding Journal of Electronic Materials. 39: 1125-1132. DOI: 10.1007/s11664-010-1258-5  0.64
2010 Grosso G, Graves JC, Hammack AT, High AA, Butov LV, Hanson M, Gossard AC. Excitonic switches operating at around 100 K Optics Infobase Conference Papers 0.64
2010 Kuznetsova YY, Remeika M, High AA, Hammack AT, Butov LV, Hanson M, Gossard AC. All-optical excitonic switch Optics Infobase Conference Papers 0.64
2010 Hammack AT, Butov LV, Wilkes J, Mouchliadis L, Muljarov EA, Ivanov AL, Gossard AC. Spatially resolved kinetics and spatially separated pump-probe studies of transport and thermalization of indirect excitons Optics Infobase Conference Papers 0.64
2010 Grosso G, Graves JC, Hammack AT, High AA, Butov LV, Hanson M, Gossard AC. Excitonic switches operating at around 100 K Optics Infobase Conference Papers 0.64
2010 Hammack AT, Butov LV, Wilkes J, Mouchliadis L, Muljarov EA, Ivanov AL, Gossard AC. Spatially resolved kinetics and spatially separated pump-probe studies of transport and thermalization of indirect excitons Optics Infobase Conference Papers 0.64
2010 Kuznetsova YY, Remeika M, High AA, Hammack AT, Butov LV, Hanson M, Gossard AC. All-optical excitonic switch Optics Infobase Conference Papers 0.64
2009 Barthel C, Reilly DJ, Marcus CM, Hanson MP, Gossard AC. Rapid single-shot measurement of a singlet-triplet qubit. Physical Review Letters. 103: 160503. PMID 19905680 DOI: 10.1103/PhysRevLett.103.160503  0.64
2009 Williams KK, Taylor ZD, Suen JY, Lu H, Singh RS, Gossard AC, Brown ER. Toward a 1550 nm InGaAs photoconductive switch for terahertz generation. Optics Letters. 34: 3068-70. PMID 19838228  0.64
2009 Leonard JR, Kuznetsova YY, Yang S, Butov LV, Ostatnický T, Kavokin A, Gossard AC. Spin transport of excitons. Nano Letters. 9: 4204-8. PMID 19780583 DOI: 10.1021/nl9024227  0.64
2009 Wistey MA, Singisetti U, Burek GJ, Kim E, Thibeault BJ, Nelson A, Cagnon J, Lee YJ, Bank SR, Stemmer S, McIntyre PC, Gossard AC, Rodwell MJW. III-V/Ge channel engineering for future CMOS Ecs Transactions. 19: 361-372. DOI: 10.1149/1.3119559  0.64
2009 Bauerschmidt S, Preu S, Malzer S, Döhler GH, Wang L, Lu H, Gossard AC. Coherent superposition of terahertz beams from a phased linear photomixer array Proceedings - Tera-Mir 2009, Nato Advanced Research Workshop Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications. 75-76. DOI: 10.1109/TERAMIR.2009.5379620  0.64
2009 Preu S, Malzer S, Döhler GH, Wang L, Lu H, Gossard AC. Telecom-wavelength compatible THz n-i-pn-i-p superlattice photomixers for spectroscopical applications Proceedings - Tera-Mir 2009, Nato Advanced Research Workshop Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications. 81-82. DOI: 10.1109/TERAMIR.2009.5379619  0.64
2009 Singisetti U, Wistey MA, Burek GJ, Baraskar AK, Thibeault BJ, Gossard AC, Rodwell MJW, Shin B, Kim EJ, McIntyre PC, Yu B, Yuan Y, Wang D, Taur Y, Asbeck P, et al. In0.53Ga0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth Ieee Electron Device Letters. 30: 1128-1130. DOI: 10.1109/LED.2009.2031304  0.64
2009 Jain V, Baraskar AK, Wistey MA, Singisetti U, Griffith Z, Lobisser E, Thibeault BJ, Gossard AC, Rodwell MJW. Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 358-361. DOI: 10.1109/ICIPRM.2009.5012438  0.64
2009 Singisetti U, Wistey MA, Burek GJ, Baraskar AK, Cagnon J, Thibeault BJ, Stemmer S, Gossard AC, Rodwell MJW, Kim E, Shin B, McIntyre PC, Lee YJ. 37 mS/μm In0.53Ga0.47as MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain Device Research Conference - Conference Digest, Drc. 253-254. DOI: 10.1109/DRC.2009.5354901  0.64
2009 Hammack AT, Butov LV, Wilkes J, Mouchliadis L, Muljarov EA, Ivanov AL, Gossard AC. Kinetics of the inner ring in the exciton emission pattern in coupled GaAs quantum wells Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/PhysRevB.80.155331  0.64
2009 Yamauchi Y, Hashisaka M, Nakamura S, Chida K, Kasai S, Ono T, Leturcq R, Ensslin K, Driscoll DC, Gossard AC, Kobayashi K. Non-equilibrium dephasing in ballistic interferometers Journal of Physics: Conference Series. 193. DOI: 10.1088/1742-6596/193/1/012045  0.64
2009 Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC, Huang Y, Ryou JH, Dupuis RD. Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy Applied Physics Letters. 95. DOI: 10.1063/1.3224914  0.64
2009 Zeng G, Bahk JH, Ramu AT, Bowers JE, Lu H, Gossard AC, Bian Z, Zebarjadi M, Shakouri A. 6 watt segmented power generator modules using Bi2Te3 and (InGaAs)1-x(InAIAs)x elements embedded with ErAs nanoparticles Materials Research Society Symposium Proceedings. 1129: 97-102.  0.64
2009 Hammack AT, Yang S, Butov LV, Gossard AC. Properties of the exciton inner ring at ultra-low temperatures and high magnetic fields 2009 Conference On Lasers and Electro-Optics and 2009 Conference On Quantum Electronics and Laser Science Conference, Cleo/Qels 2009 0.64
2009 Leonard JR, Yang S, Butov LV, Gossard AC. Spin transport of indirect excitons in GaAs/AlGaAs coupled quantum wells 2009 Conference On Lasers and Electro-Optics and 2009 Conference On Quantum Electronics and Laser Science Conference, Cleo/Qels 2009 0.64
2009 High AA, Thomas AK, Hammack AT, Butov LV, Hanson M, Gossard AC. A diamond trap for indirect excitons in coupled quantum wells 2009 Conference On Lasers and Electro-Optics and 2009 Conference On Quantum Electronics and Laser Science Conference, Cleo/Qels 2009 0.64
2008 Reilly DJ, Taylor JM, Laird EA, Petta JR, Marcus CM, Hanson MP, Gossard AC. Measurement of temporal correlations of the overhauser field in a double quantum dot. Physical Review Letters. 101: 236803. PMID 19113577 DOI: 10.1103/PhysRevLett.101.236803  0.64
2008 Reilly DJ, Taylor JM, Petta JR, Marcus CM, Hanson MP, Gossard AC. Suppressing spin qubit dephasing by nuclear state preparation. Science (New York, N.Y.). 321: 817-21. PMID 18687959 DOI: 10.1126/science.1159221  0.64
2008 High AA, Novitskaya EE, Butov LV, Hanson M, Gossard AC. Control of exciton fluxes in an excitonic integrated circuit. Science (New York, N.Y.). 321: 229-31. PMID 18566248 DOI: 10.1126/science.1157845  0.64
2008 Chen HT, Lu H, Azad AK, Averitt RD, Gossard AC, Trugman SA, O'Hara JF, Taylor AJ. Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays. Optics Express. 16: 7641-8. PMID 18545471 DOI: 10.1364/OE.16.007641  0.64
2008 Preu S, Schwefel HG, Malzer S, Döhler GH, Wang LJ, Hanson M, Zimmerman JD, Gossard AC. Coupled whispering gallery mode resonators in the Terahertz frequency range. Optics Express. 16: 7336-43. PMID 18545439 DOI: 10.1364/OE.16.007336  0.64
2008 Kim W, Singer SL, Majumdar A, Zide JM, Klenov D, Gossard AC, Stemmer S. Reducing thermal conductivity of crystalline solids at high temperature using embedded nanostructures. Nano Letters. 8: 2097-9. PMID 18507477 DOI: 10.1021/nl080189t  0.64
2008 Petta JR, Taylor JM, Johnson AC, Yacoby A, Lukin MD, Marcus CM, Hanson MP, Gossard AC. Dynamic nuclear polarization with single electron spins. Physical Review Letters. 100: 067601. PMID 18352516 DOI: 10.1103/PhysRevLett.100.067601  0.64
2008 Amasha S, Maclean K, Radu IP, Zumbühl DM, Kastner MA, Hanson MP, Gossard AC. Electrical control of spin relaxation in a quantum dot. Physical Review Letters. 100: 046803. PMID 18352316 DOI: 10.1103/PhysRevLett.100.046803  0.64
2007 Laird EA, Barthel C, Rashba EI, Marcus CM, Hanson MP, Gossard AC. Hyperfine-mediated gate-driven electron spin resonance. Physical Review Letters. 99: 246601. PMID 18233467 DOI: 10.1103/PhysRevLett.99.246601  0.64
2007 Zhang Y, DiCarlo L, McClure DT, Yamamoto M, Tarucha S, Marcus CM, Hanson MP, Gossard AC. Noise correlations in a Coulomb-blockaded quantum dot. Physical Review Letters. 99: 036603. PMID 17678305 DOI: 10.1103/PhysRevLett.99.036603  0.64
2007 Chen HT, Padilla WJ, Zide JM, Bank SR, Gossard AC, Taylor AJ, Averitt RD. Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/GaAs nanoisland superlattices. Optics Letters. 32: 1620-2. PMID 17572725  0.64
2007 Winbow AG, Hammack AT, Butov LV, Gossard AC. Photon storage with nanosecond switching in coupled quantum well nanostructures. Nano Letters. 7: 1349-51. PMID 17425373 DOI: 10.1021/nl070386c  0.64
2007 McClure DT, Dicarlo L, Zhang Y, Engel HA, Marcus CM, Hanson MP, Gossard AC. Tunable noise cross correlations in a double quantum dot. Physical Review Letters. 98: 056801. PMID 17358883 DOI: 10.1103/PhysRevLett.98.056801  0.64
2007 MacLean K, Amasha S, Radu IP, Zumbühl DM, Kastner MA, Hanson MP, Gossard AC. Energy-dependent tunneling in a quantum dot. Physical Review Letters. 98: 036802. PMID 17358709 DOI: 10.1103/PhysRevLett.98.036802  0.64
2006 Chen HT, Padilla WJ, Zide JM, Gossard AC, Taylor AJ, Averitt RD. Active terahertz metamaterial devices. Nature. 444: 597-600. PMID 17136089 DOI: 10.1038/nature05343  0.64
2006 Laird EA, Petta JR, Johnson AC, Marcus CM, Yacoby A, Hanson MP, Gossard AC. Effect of exchange interaction on spin dephasing in a double quantum dot. Physical Review Letters. 97: 056801. PMID 17026127 DOI: 10.1103/PhysRevLett.97.056801  0.64
2006 Zumbühl DM, Marcus CM, Hanson MP, Gossard AC. Asymmetry of nonlinear transport and electron interactions in quantum dots. Physical Review Letters. 96: 206802. PMID 16803193 DOI: 10.1103/PhysRevLett.96.206802  0.64
2006 Taylor ZD, Brown ER, Bjarnason JE, Hanson MP, Gossard AC. Resonant-optical-cavity photoconductive switch with 0.5% conversion efficiency and 1.0 W peak power. Optics Letters. 31: 1729-31. PMID 16688276 DOI: 10.1364/OL.31.001729  0.64
2005 Heller EJ, Aidala KE, LeRoy BJ, Bleszynski AC, Kalben A, Westervelt RM, Maranowski KD, Gossard AC. Thermal averages in a quantum point contact with a single coherent wave packet. Nano Letters. 5: 1285-92. PMID 16178225 DOI: 10.1021/nl0504585  0.64
2005 Petta JR, Johnson AC, Taylor JM, Laird EA, Yacoby A, Lukin MD, Marcus CM, Hanson MP, Gossard AC. Coherent manipulation of coupled electron spins in semiconductor quantum dots. Science (New York, N.Y.). 309: 2180-4. PMID 16141370 DOI: 10.1126/science.1116955  0.64
2005 Johnson AC, Petta JR, Taylor JM, Yacoby A, Lukin MD, Marcus CM, Hanson MP, Gossard AC. Triplet-singlet spin relaxation via nuclei in a double quantum dot. Nature. 435: 925-8. PMID 15944715 DOI: 10.1038/nature03815  0.64
2005 LeRoy BJ, Bleszynski AC, Aidala KE, Westervelt RM, Kalben A, Heller EJ, Shaw SE, Maranowski KD, Gossard AC. Imaging electron interferometer. Physical Review Letters. 94: 126801. PMID 15903945 DOI: 10.1063/1.1994666  0.64
2005 Fallahi P, Bleszynski AC, Westervelt RM, Huang J, Walls JD, Heller EJ, Hanson M, Gossard AC. Imaging a single-electron quantum dot. Nano Letters. 5: 223-6. PMID 15794600 DOI: 10.1021/nl048405v  0.64
2004 Zumbühl DM, Marcus CM, Hanson MP, Gossard AC. Cotunneling spectroscopy in few-electron quantum dots. Physical Review Letters. 93: 256801. PMID 15697924 DOI: 10.1103/PhysRevLett.93.256801  0.64
2004 Petta JR, Johnson AC, Marcus CM, Hanson MP, Gossard AC. Manipulation of a single charge in a double quantum dot. Physical Review Letters. 93: 186802. PMID 15525191 DOI: 10.1103/PhysRevLett.93.186802  0.64
2004 Johnson AC, Marcus CM, Hanson MP, Gossard AC. Coulomb-modified Fano resonance in a one-lead quantum dot. Physical Review Letters. 93: 106803. PMID 15447436 DOI: 10.1103/PhysRevLett.93.106803  0.64
2004 DiCarlo L, Lynch HJ, Johnson AC, Childress LI, Crockett K, Marcus CM, Hanson MP, Gossard AC. Differential charge sensing and charge delocalization in a tunable double quantum dot. Physical Review Letters. 92: 226801. PMID 15245249 DOI: 10.1103/PhysRevLett.92.226801  0.64
2004 Craig NJ, Taylor JM, Lester EA, Marcus CM, Hanson MP, Gossard AC. Tunable nonlocal spin control in a coupled-quantum dot system. Science (New York, N.Y.). 304: 565-7. PMID 15044752 DOI: 10.1126/science.1095452  0.64
2003 Brown ER, Bacher A, Driscoll D, Hanson M, Kadow C, Gossard AC. Evidence for a strong surface-plasmon resonance on ErAs nanoparticles in GaAs. Physical Review Letters. 90: 077403. PMID 12633271 DOI: 10.1103/PhysRevLett.90.077403  0.64
2003 Griebel M, Smet JH, Driscoll DC, Kuhl J, Diez CA, Freytag N, Kadow C, Gossard AC, Von Klitzing K. Tunable subpicosecond optoelectronic transduction in superlattices of self-assembled ErAs nanoislands. Nature Materials. 2: 122-6. PMID 12612698 DOI: 10.1038/nmat819  0.64
2001 Williams JB, Sherwin MS, Maranowski KD, Gossard AC. Dissipation of intersubband plasmons in wide quantum wells. Physical Review Letters. 87: 037401. PMID 11461588 DOI: 10.1103/PhysRevLett.87.037401  0.64
2001 Harris JG, Knobel R, Maranowski KD, Gossard AC, Samarth N, Awschalom DD. Magnetization measurements of magnetic two-dimensional electron gases. Physical Review Letters. 86: 4644-7. PMID 11384304 DOI: 10.1103/PhysRevLett.86.4644  0.64
2001 Topinka MA, LeRoy BJ, Westervelt RM, Shaw SE, Fleischmann R, Heller EJ, Maranowski KD, Gossard AC. Coherent branched flow in a two-dimensional electron gas. Nature. 410: 183-6. PMID 11242072 DOI: 10.1038/35065553  0.64
2000 Topinka MA, LeRoy BJ, Shaw SE, Heller EJ, Westervelt RM, Maranowski KD, Gossard AC. Imaging coherent electron flow from a quantum point contact Science (New York, N.Y.). 289: 2323-6. PMID 11009412 DOI: 10.1126/science.289.5488.2323  0.64
1996 Zeuner S, Keay BJ, Allen SJ, Maranowski KD, Gossard AC, Bhattacharya U, Rodwell MJ. Transition from classical to quantum response in semiconductor superlattices at THz frequncies. Physical Review. B, Condensed Matter. 53: R1717-R1720. PMID 9983689  0.52
1995 Keay BJ, Zeuner S, Allen SJ, Maranowski KD, Gossard AC, Bhattacharya U, Rodwell MJ. Dynamic localization, absolute negative conductance, and stimulated, multiphoton emission in sequential resonant tunneling semiconductor superlattices. Physical Review Letters. 75: 4102-4105. PMID 10059815 DOI: 10.1103/PhysRevLett.75.4102  0.64
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