Arthur C. Gossard - Publications

Affiliations: 
1960-1987 Bell Laboratories, Murray Hill, NJ, United States 
 1987- University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Condensed Matter Physics
Website:
https://www.materials.ucsb.edu/node/1411

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Year Citation  Score
2021 Camenzind LC, Svab S, Stano P, Yu L, Zimmerman JD, Gossard AC, Loss D, Zumbühl DM. Isotropic and Anisotropic g-Factor Corrections in GaAs Quantum Dots. Physical Review Letters. 127: 057701. PMID 34397233 DOI: 10.1103/PhysRevLett.127.057701  0.644
2020 Nandi U, Dutzi K, Deninger A, Lu H, Norman J, Gossard AC, Vieweg N, Preu S. ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5  THz single shot bandwidth and emitted terahertz power of 164  µW. Optics Letters. 45: 2812-2815. PMID 32412473 DOI: 10.1364/Ol.388870  0.313
2020 Wan Y, Shang C, Huang J, Xie Z, Jain A, Norman J, Chen B, Gossard AC, Bowers JE. Low-Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes. Acs Nano. PMID 32083840 DOI: 10.1021/Acsnano.9B09715  0.337
2020 Wan Y, Shang C, Norman J, Shi B, Li Q, Collins N, Dumont M, Lau KM, Gossard AC, Bowers JE. Low Threshold Quantum Dot Lasers Directly Grown on Unpatterned Quasi-Nominal (001) Si Ieee Journal of Selected Topics in Quantum Electronics. 26: 1-9. DOI: 10.1109/Jstqe.2020.2964381  0.395
2020 Snijders HJ, Kok DNL, Stolpe MFvd, Frey JA, Norman J, Gossard AC, Bowers JE, Exter MPv, Bouwmeester D, Löffler W. Extended polarized semiclassical model for quantum-dot cavity QED and its application to single-photon sources Physical Review A. 101: 53811. DOI: 10.1103/Physreva.101.053811  0.362
2020 Chen B, Wan Y, Xie Z, Huang J, Zhang N, Shang C, Norman J, Li Q, Tong Y, Lau KM, Gossard AC, Bowers JE. Low Dark Current High Gain InAs Quantum Dot Avalanche Photodiodes Monolithically Grown on Si Acs Photonics. 7: 528-533. DOI: 10.1021/Acsphotonics.9B01709  0.365
2020 Wan Y, Norman JC, Tong Y, Kennedy MJ, He W, Selvidge J, Shang C, Dumont M, Malik A, Tsang HK, Gossard AC, Bowers JE. Quantum Dot Lasers: 1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si (Laser Photonics Rev. 14(7)/2020) Laser & Photonics Reviews. 14: 2070042. DOI: 10.1002/Lpor.202070042  0.354
2020 Wan Y, Zhang S, Norman JC, Kennedy M, He W, Tong Y, Shang C, He J, Tsang HK, Gossard AC, Bowers JE. Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm (Laser Photonics Rev. 14(3)/2020) Laser & Photonics Reviews. 14: 2070021. DOI: 10.1002/Lpor.202070021  0.359
2020 Wan Y, Norman JC, Tong Y, Kennedy MJ, He W, Selvidge J, Shang C, Dumont M, Malik A, Tsang HK, Gossard AC, Bowers JE. 1.3 µm Quantum Dot‐Distributed Feedback Lasers Directly Grown on (001) Si Laser & Photonics Reviews. 14: 2000037. DOI: 10.1002/Lpor.202000037  0.351
2020 Wan Y, Zhang S, Norman JC, Kennedy M, He W, Tong Y, Shang C, He J, Tsang HK, Gossard AC, Bowers JE. Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 µm Laser & Photonics Reviews. 14: 1900348. DOI: 10.1002/Lpor.201900348  0.377
2019 Camenzind LC, Yu L, Stano P, Zimmerman JD, Gossard AC, Loss D, Zumbühl DM. Spectroscopy of Quantum Dot Orbitals with In-Plane Magnetic Fields. Physical Review Letters. 122: 207701. PMID 31172765 DOI: 10.1103/Physrevlett.122.207701  0.674
2019 Guimarães PS, Keay BJ, Kaminski JP, Allen SJ, Hopkins PF, Gossard AC, Florez LT, Harbison JP. Photon-mediated sequential resonant tunneling in intense terahertz electric fields. Physical Review Letters. 70: 3792-3795. PMID 10053963 DOI: 10.1103/Physrevlett.70.3792  0.37
2019 Höpfel RA, Shah J, Gossard AC. Nonequilibrium electron-hole plasma in GaAs quantum wells. Physical Review Letters. 56: 765-768. PMID 10033279 DOI: 10.1103/Physrevlett.56.765  0.408
2019 Liu S, Wu X, Jung D, Norman JC, Kennedy MJ, Tsang HK, Gossard AC, Bowers JE. High-channel-count 20  GHz passively mode-locked quantum dot laser directly grown on Si with 41  Tbit/s transmission capacity Optica. 6: 128. DOI: 10.1364/Optica.6.000128  0.351
2019 Shang C, Gossard AC, Bowers JE, Wan Y, Norman JC, Collins N, MacFarlane I, Dumont M, Liu S, Li Q, Lau KM. Low-Threshold Epitaxially Grown 1.3-μm InAs Quantum Dot Lasers on Patterned (001) Si Ieee Journal of Selected Topics in Quantum Electronics. 25: 1-7. DOI: 10.1109/Jstqe.2019.2927581  0.362
2019 Norman JC, Zhang Z, Jung D, Shang C, Kennedy M, Dumont M, Herrick RW, Gossard AC, Bowers JE. The Importance of p-Doping for Quantum Dot Laser on Silicon Performance Ieee Journal of Quantum Electronics. 55: 1-11. DOI: 10.1109/Jqe.2019.2941579  0.424
2019 Norman JC, Jung D, Zhang Z, Wan Y, Liu S, Shang C, Herrick RW, Chow WW, Gossard AC, Bowers JE. A Review of High-Performance Quantum Dot Lasers on Silicon Ieee Journal of Quantum Electronics. 55: 1-11. DOI: 10.1109/Jqe.2019.2901508  0.433
2019 Banks HB, Wu Q, Valovcin DC, Mack S, Gossard AC, Pfeiffer L, Liu R, Sherwin MS. Publisher’s Note: Dynamical Birefringence: Electron-Hole Recollisions as Probes of Berry Curvature [Phys. Rev. X 7 , 041042 (2017)] Physical Review X. 9. DOI: 10.1103/Physrevx.9.049902  0.303
2019 Croot X, Pauka S, Jarratt M, Lu H, Gossard A, Watson J, Gardner G, Fallahi S, Manfra M, Reilly D. Gate-Sensing Charge Pockets in the Semiconductor-Qubit Environment Physical Review Applied. 11. DOI: 10.1103/Physrevapplied.11.064027  0.396
2019 Liu S, Norman J, Dumont M, Jung D, Torres A, Gossard AC, Bowers JE, Liu S, Torres A, Gossard A, Bowers J, Liu S, Jung D, Gossard A, Bowers J, ... ... Gossard A, et al. High-Performance O-Band Quantum-Dot Semiconductor Optical Amplifiers Directly Grown on a CMOS Compatible Silicon Substrate Acs Photonics. 6: 2523-2529. DOI: 10.1021/Acsphotonics.9B00903  0.383
2019 Huang J, Wan Y, Jung D, Norman J, Shang C, Li Q, Lau KM, Gossard AC, Bowers JE, Chen B. Defect Characterization of InAs/InGaAs Quantum Dot p-i-n Photodetector Grown on GaAs-on-V-Grooved-Si Substrate Acs Photonics. 6: 1100-1105. DOI: 10.1021/Acsphotonics.8B01707  0.408
2018 Valovcin DC, Banks HB, Mack S, Gossard AC, West K, Pfeiffer L, Sherwin MS. Optical frequency combs from high-order sideband generation. Optics Express. 26: 29807-29816. PMID 30469939 DOI: 10.1364/Oe.26.029807  0.305
2018 Frey JA, Snijders HJ, Norman J, Gossard AC, Bowers JE, Löffler W, Bouwmeester D. Electro-optic polarization tuning of microcavities with a single quantum dot. Optics Letters. 43: 4280-4283. PMID 30160707 DOI: 10.1364/Ol.43.004280  0.392
2018 Camenzind LC, Yu L, Stano P, Zimmerman JD, Gossard AC, Loss D, Zumbühl DM. Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot. Nature Communications. 9: 3454. PMID 30150721 DOI: 10.1038/S41467-018-05879-X  0.613
2018 Snijders HJ, Frey JA, Norman J, Flayac H, Savona V, Gossard AC, Bowers JE, van Exter MP, Bouwmeester D, Löffler W. Observation of the Unconventional Photon Blockade. Physical Review Letters. 121: 043601. PMID 30095925 DOI: 10.1103/Physrevlett.121.043601  0.368
2018 Inoue D, Jung D, Norman J, Wan Y, Nishiyama N, Arai S, Gossard AC, Bowers JE. Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon. Optics Express. 26: 7022-7033. PMID 29609387 DOI: 10.1364/Oe.26.007022  0.387
2018 Wan Y, Inoue D, Jung D, Norman JC, Shang C, Gossard AC, Bowers JE. Directly modulated quantum dot lasers on silicon with a milliampere threshold and high temperature stability Photonics Research. 6: 776. DOI: 10.1364/Prj.6.000776  0.362
2018 Regensburger S, Preu S, Mukherjee Ak, Schonhuber S, Kainz MA, Winnerl S, Klopf JM, Lu H, Gossard AC, Unterrainer K. Broadband Terahertz Detection With Zero-Bias Field-Effect Transistors Between 100 GHz and 11.8 THz With a Noise Equivalent Power of 250 pW/$\sqrt{\text{Hz}}$ at 0.6 THz Ieee Transactions On Terahertz Science and Technology. 8: 465-471. DOI: 10.1109/Tthz.2018.2843535  0.362
2018 Snijders H, Frey J, Norman J, Post V, Gossard A, Bowers J, van Exter M, Löffler W, Bouwmeester D. Fiber-Coupled Cavity-QED Source of Identical Single Photons Physical Review Applied. 9. DOI: 10.1103/Physrevapplied.9.031002  0.365
2018 Liu S, Norman JC, Jung D, Kennedy M, Gossard AC, Bowers JE. Monolithic 9 GHz passively mode locked quantum dot lasers directly grown on on-axis (001) Si Applied Physics Letters. 113: 041108. DOI: 10.1063/1.5043200  0.372
2018 Inoue D, Wan Y, Jung D, Norman J, Shang C, Nishiyama N, Arai S, Gossard AC, Bowers JE. Low-dark current 10 Gbit/s operation of InAs/InGaAs quantum dot p-i-n photodiode grown on on-axis (001) GaP/Si Applied Physics Letters. 113: 093506. DOI: 10.1063/1.5041908  0.361
2018 Jung D, Ironside DJ, Bank SR, Gossard AC, Bowers JE. Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy Journal of Applied Physics. 123: 205302. DOI: 10.1063/1.5031772  0.636
2018 Jung D, Herrick R, Norman J, Turnlund K, Jan C, Feng K, Gossard AC, Bowers JE. Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si Applied Physics Letters. 112: 153507. DOI: 10.1063/1.5026147  0.381
2018 Liu S, Jung D, Norman JC, Kennedy MJ, Gossard AC, Bowers JE. 490 fs pulse generation from passively mode-locked single section quantum dot laser directly grown on on-axis GaP/Si Electronics Letters. 54: 432-433. DOI: 10.1049/El.2017.4639  0.34
2018 Wan Y, Jung D, Shang C, Collins N, MacFarlane I, Norman J, Dumont M, Gossard AC, Bowers JE. Low-Threshold Continuous-Wave Operation of Electrically Pumped 1.55 μm InAs Quantum Dash Microring Lasers Acs Photonics. 6: 279-285. DOI: 10.1021/Acsphotonics.8B01341  0.381
2018 Nandi U, Norman JC, Gossard AC, Lu H, Preu S. 1550-nm Driven ErAs:In(Al)GaAs Photoconductor-Based Terahertz Time Domain System with 6.5 THz Bandwidth Journal of Infrared, Millimeter, and Terahertz Waves. 39: 340-348. DOI: 10.1007/S10762-018-0471-9  0.311
2018 Jung D, Norman J, Wan Y, Liu S, Herrick R, Selvidge J, Mukherjee K, Gossard AC, Bowers JE. Recent Advances in InAs Quantum Dot Lasers Grown on On-Axis (001) Silicon by Molecular Beam Epitaxy Physica Status Solidi (a). 216: 1800602. DOI: 10.1002/Pssa.201800602  0.38
2017 Wan Y, Zhang Z, Chao R, Norman J, Jung D, Shang C, Li Q, Kennedy MJ, Liang D, Zhang C, Shi JW, Gossard AC, Lau KM, Bowers JE. Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates. Optics Express. 25: 27715-27723. PMID 29092242 DOI: 10.1364/Oe.25.027715  0.382
2017 Wan Y, Jung D, Norman J, Shang C, MacFarlane I, Li Q, Kennedy MJ, Gossard AC, Lau KM, Bowers JE. O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si. Optics Express. 25: 26853-26860. PMID 29092170 DOI: 10.1364/Oe.25.026853  0.351
2017 Liu AY, Komljenovic T, Davenport ML, Gossard AC, Bowers JE. Reflection sensitivity of 1.3 μm quantum dot lasers epitaxially grown on silicon. Optics Express. 25: 9535-9543. PMID 28468336 DOI: 10.1364/Oe.25.009535  0.406
2017 Norman J, Kennedy MJ, Selvidge J, Li Q, Wan Y, Liu AY, Callahan PG, Echlin MP, Pollock TM, Lau KM, Gossard AC, Bowers JE. Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si. Optics Express. 25: 3927-3934. PMID 28241602 DOI: 10.1364/Oe.25.003927  0.381
2017 Liu AY, Peters J, Huang X, Jung D, Norman J, Lee ML, Gossard AC, Bowers JE. Electrically pumped continuous-wave 1.3  μm quantum-dot lasers epitaxially grown on on-axis (001)  GaP/Si. Optics Letters. 42: 338-341. PMID 28081107 DOI: 10.1364/Ol.42.000338  0.396
2017 Olvera AF, Lu H, Gossard AC, Preu S. Continuous-wave 1550 nm operated terahertz system using ErAs:In(Al)GaAs photo-conductors with 52 dB dynamic range at 1 THz Optics Express. 25: 29492. DOI: 10.1364/Oe.25.029492  0.305
2017 Lau KM, Shi B, Wan Y, Liu AY, Li Q, Zhu S, Gossard AC, Bowers JE, Hu EL. InAs Quantum Dot Micro-disk Lasers Grown on (001) Si Emitting at Communication Wavelengths Proceedings of Spie. 10123. DOI: 10.1117/12.2256481  0.414
2017 Banks HB, Wu Q, Valovcin DC, Mack S, Gossard AC, Pfeiffer L, Liu R, Sherwin MS. Dynamical Birefringence: Electron-Hole Recollisions as Probes of Berry Curvature Physical Review X. 7. DOI: 10.1103/Physrevx.7.041042  0.418
2017 Dorow CJ, Hasling MW, Calman EV, Butov LV, Wilkes J, Campman KL, Gossard AC. Spatially resolved and time-resolved imaging of transport of indirect excitons in high magnetic fields Physical Review B. 95. DOI: 10.1103/Physrevb.95.235308  0.332
2017 Kuznetsova YY, Dorow CJ, Calman EV, Butov LV, Wilkes J, Muljarov EA, Campman KL, Gossard AC. Transport of indirect excitons in high magnetic fields Physical Review B. 95. DOI: 10.1103/Physrevb.95.125304  0.355
2017 Jung D, Callahan PG, Shin B, Mukherjee K, Gossard AC, Bowers JE. Low threading dislocation density GaAs growth on on-axis GaP/Si (001) Journal of Applied Physics. 122: 225703. DOI: 10.1063/1.5001360  0.347
2017 Jung D, Norman J, Kennedy MJ, Shang C, Shin B, Wan Y, Gossard AC, Bowers JE. High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si Applied Physics Letters. 111: 122107. DOI: 10.1063/1.4993226  0.393
2017 Jung D, Zhang Z, Norman J, Herrick R, Kennedy MJ, Patel P, Turnlund K, Jan C, Wan Y, Gossard AC, Bowers JE. Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency Acs Photonics. 5: 1094-1100. DOI: 10.1021/Acsphotonics.7B01387  0.398
2016 Li Q, Wan Y, Liu AY, Gossard AC, Bowers JE, Hu EL, Lau KM. 1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon. Optics Express. 24: 21038-45. PMID 27607707 DOI: 10.1364/Oe.24.021038  0.4
2016 Wan Y, Li Q, Liu AY, Gossard AC, Bowers JE, Hu EL, Lau KM. Optically pumped 1.3  μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon. Optics Letters. 41: 1664-7. PMID 27192313 DOI: 10.1364/Ol.41.001664  0.375
2016 Andreakou P, Mikhailov AV, Cronenberger S, Scalbert D, Nalitov A, Kavokin AV, Nawrocki M, Butov LV, Campman KL, Gossard AC, Vladimirova M. Influence of magnetic quantum confined Stark effect on the spin lifetime of indirect excitons Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.115410  0.367
2016 Wan Y, Li Q, Liu AY, Gossard AC, Bowers JE, Hu EL, Lau KM. Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources Applied Physics Letters. 109. DOI: 10.1063/1.4955456  0.416
2016 Wan Y, Li Q, Liu AY, Chow WW, Gossard AC, Bowers JE, Hu EL, Lau KM. Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates Applied Physics Letters. 108. DOI: 10.1063/1.4952600  0.408
2016 Dorow CJ, Kuznetsova YY, Leonard JR, Chu MK, Butov LV, Wilkes J, Hanson M, Gossard AC. Indirect excitons in a potential energy landscape created by a perforated electrode Applied Physics Letters. 108. DOI: 10.1063/1.4942204  0.551
2016 Snijders H, Frey JA, Norman J, Bakker MP, Langman EC, Gossard A, Bowers JE, Van Exter MP, Bouwmeester D, Löffler W. Purification of a single-photon nonlinearity Nature Communications. 7. DOI: 10.1038/Ncomms12578  0.406
2015 Biesinger DE, Scheller CP, Braunecker B, Zimmerman J, Gossard AC, Zumbühl DM. Intrinsic Metastabilities in the Charge Configuration of a Double Quantum Dot. Physical Review Letters. 115: 106804. PMID 26382695 DOI: 10.1103/Physrevlett.115.106804  0.673
2015 Kuznetsova YY, Andreakou P, Hasling MW, Leonard JR, Calman EV, Butov LV, Hanson M, Gossard AC. Two-dimensional snowflake trap for indirect excitons. Optics Letters. 40: 589-92. PMID 25680157 DOI: 10.1364/Ol.40.000589  0.598
2015 Yoneda J, Otsuka T, Takakura T, Pioro-Ladrière M, Brunner R, Lu H, Nakajima T, Obata T, Noiri A, Palmstrøm CJ, Gossard AC, Tarucha S. Robust micromagnet design for fast electrical manipulations of single spins in quantum dots Applied Physics Express. 8. DOI: 10.7567/Apex.8.084401  0.338
2015 Liu AY, Srinivasan S, Norman J, Gossard AC, Bowers JE. Quantum dot lasers for silicon photonics [Invited] Photonics Research. 3: B1-B9. DOI: 10.1364/Prj.3.0000B1  0.395
2015 Wistey MA, Baraskar AK, Singisetti U, Burek GJ, Shin B, Kim E, McIntyre PC, Gossard AC, Rodwell MJW. Control of InGaAs and InAs facets using metal modulation epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4905497  0.337
2015 Liu AY, Herrick RW, Ueda O, Petroff PM, Gossard AC, Bowers JE. Reliability of InAs/GaAs quantum dot lasers epitaxially grown on silicon Ieee Journal On Selected Topics in Quantum Electronics. 21. DOI: 10.1109/Jstqe.2015.2418226  0.378
2015 Andreakou P, Cronenberger S, Scalbert D, Nalitov A, Gippius NA, Kavokin AV, Nawrocki M, Leonard JR, Butov LV, Campman KL, Gossard AC, Vladimirova M. Nonlinear optical spectroscopy of indirect excitons in coupled quantum wells Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.125437  0.426
2015 Chow WW, Liu AY, Gossard AC, Bowers JE. Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers Applied Physics Letters. 107. DOI: 10.1063/1.4934838  0.405
2015 Hasling MW, Kuznetsova YY, Andreakou P, Leonard JR, Calman EV, Dorow CJ, Butov LV, Hanson M, Gossard AC. Stirring potential for indirect excitons Journal of Applied Physics. 117. DOI: 10.1063/1.4905080  0.559
2015 Burke PG, Curtin BM, Bowers JE, Gossard AC. Minority carrier barrier heterojunctions for improved thermoelectric efficiency Nano Energy. 12: 735-741. DOI: 10.1016/J.Nanoen.2015.01.037  0.349
2014 Yoneda J, Otsuka T, Nakajima T, Takakura T, Obata T, Pioro-Ladrière M, Lu H, Palmstrøm CJ, Gossard AC, Tarucha S. Fast electrical control of single electron spins in quantum dots with vanishing influence from nuclear spins. Physical Review Letters. 113: 267601. PMID 25615383 DOI: 10.1103/Physrevlett.113.267601  0.339
2014 Wang H, Bahk JH, Kang C, Hwang J, Kim K, Kim J, Burke P, Bowers JE, Gossard AC, Shakouri A, Kim W. Right sizes of nano- and microstructures for high-performance and rigid bulk thermoelectrics. Proceedings of the National Academy of Sciences of the United States of America. 111: 10949-54. PMID 25028497 DOI: 10.1073/Pnas.1403601111  0.325
2014 Colless JI, Croot XG, Stace TM, Doherty AC, Barrett SD, Lu H, Gossard AC, Reilly DJ. Raman phonon emission in a driven double quantum dot. Nature Communications. 5: 3716. PMID 24759675 DOI: 10.1038/Ncomms4716  0.457
2014 Higginbotham AP, Kuemmeth F, Hanson MP, Gossard AC, Marcus CM. Coherent operations and screening in multielectron spin qubits. Physical Review Letters. 112: 026801. PMID 24484035 DOI: 10.1103/PhysRevLett.112.026801  0.583
2014 Liu AY, Zhang C, Snyder A, Lubyshev D, Fastenau JM, Liu AWK, Gossard AC, Bowers JE. MBE growth of P-doped 1.3 μ m InAs quantum dot lasers on silicon Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4864148  0.422
2014 Lee S, Huang CY, Cohen-Elias D, Thibeault BJ, Mitchell W, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. Highly scalable raised source/drain InAs quantum well MOSFETs exhibiting ION = 482 μA/μm at IOFF = 100 nA/μm and V DD = 0.5 V Ieee Electron Device Letters. 35: 621-623. DOI: 10.1109/Led.2014.2317146  0.342
2014 Staley NE, Ray N, Kastner MA, Hanson MP, Gossard AC. Electric-field-driven insulating-to-conducting transition in a mesoscopic quantum dot lattice Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.195443  0.655
2014 Banks HB, Hofmann A, Mack S, Gossard AC, Sherwin MS. Antenna-boosted mixing of terahertz and near-infrared radiation Applied Physics Letters. 105. DOI: 10.1063/1.4894634  0.308
2014 Suen JY, Krogen PR, Preu S, Lu H, Gossard AC, Driscoll DC, Lubin PM. Measurement and modeling of ErAs:In0.53Ga0.47As nanocomposite photoconductivity for THz generation at 1.55 μ m pump wavelength Journal of Applied Physics. 116. DOI: 10.1063/1.4886180  0.352
2014 Favaloro T, Ziabari A, Bahk JH, Burke P, Lu H, Bowers J, Gossard A, Bian Z, Shakouri A. High temperature thermoreflectance imaging and transient Harman characterization of thermoelectric energy conversion devices Journal of Applied Physics. 116. DOI: 10.1063/1.4885198  0.312
2014 Scheller CP, Heizmann S, Bedner K, Giss D, Meschke M, Zumbühl DM, Zimmerman JD, Gossard AC. Silver-epoxy microwave filters and thermalizers for millikelvin experiments Applied Physics Letters. 104. DOI: 10.1063/1.4880099  0.653
2014 Huang CY, Law JJM, Lu H, Jena D, Rodwell MJW, Gossard AC. Two dimensional electron transport in modulation-doped In 0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells Journal of Applied Physics. 115. DOI: 10.1063/1.4869498  0.383
2014 Liu AY, Zhang C, Norman J, Snyder A, Lubyshev D, Fastenau JM, Liu AWK, Gossard AC, Bowers JE. High performance continuous wave 1.3 μ m quantum dot lasers on silicon Applied Physics Letters. 104. DOI: 10.1063/1.4863223  0.384
2014 Maradan D, Casparis L, Liu TM, Biesinger DEF, Scheller CP, Zumbühl DM, Zimmerman JD, Gossard AC. GaAs quantum dot thermometry using direct transport and charge sensing Journal of Low Temperature Physics. 175: 784-798. DOI: 10.1007/S10909-014-1169-6  0.66
2013 Colless JI, Mahoney AC, Hornibrook JM, Doherty AC, Lu H, Gossard AC, Reilly DJ. Dispersive readout of a few-electron double quantum dot with fast RF gate sensors. Physical Review Letters. 110: 046805. PMID 25166190 DOI: 10.1103/Physrevlett.110.046805  0.419
2013 Banks H, Zaks B, Yang F, Mack S, Gossard AC, Liu R, Sherwin MS. Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations. Physical Review Letters. 111: 267402. PMID 24483813 DOI: 10.1103/Physrevlett.111.267402  0.433
2013 Medford J, Beil J, Taylor JM, Bartlett SD, Doherty AC, Rashba EI, DiVincenzo DP, Lu H, Gossard AC, Marcus CM. Self-consistent measurement and state tomography of an exchange-only spin qubit. Nature Nanotechnology. 8: 654-9. PMID 23995458 DOI: 10.1038/Nnano.2013.168  0.381
2013 Medford J, Beil J, Taylor JM, Rashba EI, Lu H, Gossard AC, Marcus CM. Quantum-dot-based resonant exchange qubit. Physical Review Letters. 111: 050501. PMID 23952375 DOI: 10.1103/Physrevlett.111.050501  0.306
2013 Kawasaki JK, Schultz BD, Lu H, Gossard AC, Palmstrøm CJ. Surface-mediated tunable self-assembly of single crystal semimetallic ErSb/GaSb nanocomposite structures. Nano Letters. 13: 2895-901. PMID 23701166 DOI: 10.1021/Nl4012563  0.328
2013 Ribeiro H, Burkard G, Petta JR, Lu H, Gossard AC. Coherent adiabatic spin control in the presence of charge noise using tailored pulses. Physical Review Letters. 110: 086804. PMID 23473186 DOI: 10.1103/Physrevlett.110.086804  0.37
2013 Huang CY, Law JJM, Lu H, Rodwell MJW, Gossard AC. Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs Materials Research Society Symposium Proceedings. 1561: 1-6. DOI: 10.1557/Opl.2013.821  0.342
2013 Lee S, Huang CY, Cohen-Elias D, Law JJM, Chobpattanna V, Krämer S, Thibeault BJ, Mitchell W, Stemmer S, Gossard AC, Rodwell MJW. High performance raised source/drain InAs/In0.53Ga 0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer Applied Physics Letters. 103. DOI: 10.1063/1.4838660  0.311
2013 Huang CY, Lee S, Cohen-Elias D, Law JJM, Carter AD, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. Reduction of leakage current in In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors using AlAs 0.56Sb0.44 confinement layers Applied Physics Letters. 103. DOI: 10.1063/1.4831683  0.303
2013 Baraskar A, Gossard AC, Rodwell MJW. Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data Journal of Applied Physics. 114. DOI: 10.1063/1.4826205  0.343
2012 High AA, Leonard JR, Remeika M, Butov LV, Hanson M, Gossard AC. Reply to "comment on 'condensation of excitons in a trap'". Nano Letters. 12: 5422. PMID 22978516 DOI: 10.1021/Nl302928V  0.586
2012 High AA, Leonard JR, Remeika M, Butov LV, Hanson M, Gossard AC. Condensation of excitons in a trap. Nano Letters. 12: 2605-9. PMID 22509898 DOI: 10.1021/Nl300983N  0.611
2012 Medford J, Cywi?ski ?, Barthel C, Marcus CM, Hanson MP, Gossard AC. Scaling of dynamical decoupling for spin qubits. Physical Review Letters. 108: 086802. PMID 22463554 DOI: 10.1103/Physrevlett.108.086802  0.547
2012 Simes RJ, Yan RH, Geels R, Coldren LA, English JH, Gossard AC. Fabry-Perot multiple-quantum well index modulator. Applied Optics. 27: 2103-4. PMID 20531720 DOI: 10.1364/Ao.27.002103  0.374
2012 Stehlik J, Dovzhenko Y, Petta JR, Johansson JR, Nori F, Lu H, Gossard AC. Landau-Zener-Stückelberg interferometry of a single electron charge qubit Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.121303  0.409
2012 Barthel C, Medford J, Bluhm H, Yacoby A, Marcus CM, Hanson MP, Gossard AC. Relaxation and readout visibility of a singlet-triplet qubit in an Overhauser field gradient Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.035306  0.595
2012 Burke PG, Ismer L, Lu H, Frantz E, Janotti A, Van De Walle CG, Bowers JE, Gossard AC. Electrically active Er doping in InAs, In0.53Ga 0.47As, and GaAs Applied Physics Letters. 101. DOI: 10.1063/1.4769248  0.333
2012 Leonard JR, Remeika M, Kuznetsova YY, High AA, Butov LV, Hanson M, Gossard AC. Transport of indirect excitons in a potential energy gradient 2012 Conference On Lasers and Electro-Optics, Cleo 2012. DOI: 10.1063/1.4722938  0.54
2012 Clinger LE, Pernot G, Buehl TE, Burke PG, Gossard AC, Palmstrom CJ, Shakouri A, Zide JMO. Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites Journal of Applied Physics. 111. DOI: 10.1063/1.4711095  0.799
2012 Remeika M, Fogler MM, Butov LV, Hanson M, Gossard AC. Two-dimensional electrostatic lattices for indirect excitons Applied Physics Letters. 100. DOI: 10.1063/1.3682302  0.561
2012 Preu S, Kim S, Verma R, Burke PG, Sherwin MS, Gossard AC. An improved model for non-resonant terahertz detection in field-effect transistors Journal of Applied Physics. 111. DOI: 10.1063/1.3676211  0.352
2012 Burke PG, Buehl TE, Gilles P, Lu H, Shakouri A, Palmstrom CJ, Bowers JE, Gossard AC. Controlling n-type carrier density from Er doping of InGaAs with MBE growth temperature Journal of Electronic Materials. 41: 948-953. DOI: 10.1007/S11664-012-2050-5  0.794
2011 Trowbridge CJ, Norman BM, Stephens J, Gossard AC, Awschalom DD, Sih V. Electron spin polarization-based integrated photonic devices. Optics Express. 19: 14845-51. PMID 21934845 DOI: 10.1364/Oe.19.014845  0.328
2011 van Weperen I, Armstrong BD, Laird EA, Medford J, Marcus CM, Hanson MP, Gossard AC. Charge-state conditional operation of a spin qubit. Physical Review Letters. 107: 030506. PMID 21838342 DOI: 10.1103/Physrevlett.107.030506  0.596
2011 Burke PG, Lu H, Rudawski NG, Stemmer S, Gossard AC, Bahk JH, Bowers JE. Electrical properties of Er-doped In0.53Ga0.47As Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3559480  0.363
2011 Buschbeck J, Kawasaki J, Buehl TE, Gossard AC, Palmstrøm CJ. Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3556973  0.78
2011 Cassels LE, Buehl TE, Burke PG, Palmstrøm CJ, Gossard AC, Pernot G, Shakouri A, Haughn CR, Doty MF, Zide JMO. Growth and characterization of TbAs:GaAs nanocomposites Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3555388  0.802
2011 Buehl TE, Palmstrøm CJ, Gossard AC. Embedded ErAs nanorods on GaAs (n11) substrates by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3549888  0.8
2011 Kawasaki JK, Timm R, Buehl TE, Lundgren E, Mikkelsen A, Gossard AC, Palmstrøm CJ. Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3547713  0.788
2011 Toledo NG, Cruz SC, Neufeld CJ, Lang JR, Scarpulla MA, Buehl T, Gossard AC, Denbaars SP, Speck JS, Mishra UK. Integrated non-III-nitride/III-nitride tandem solar cell Device Research Conference - Conference Digest, Drc. 265-266. DOI: 10.1109/DRC.2011.5994525  0.466
2011 Dovzhenko Y, Stehlik J, Petersson KD, Petta JR, Lu H, Gossard AC. Nonadiabatic quantum control of a semiconductor charge qubit Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.161302  0.373
2011 Sciambi A, Pelliccione M, Lilly MP, Bank SR, Gossard AC, Pfeiffer LN, West KW, Goldhaber-Gordon D. Vertical field-effect transistor based on wave-function extension Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.085301  0.526
2011 Nakamura S, Yamauchi Y, Hashisaka M, Chida K, Kobayashi K, Ono T, Leturcq R, Ensslin K, Saito K, Utsumi Y, Gossard AC. Fluctuation theorem and microreversibility in a quantum coherent conductor Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.155431  0.397
2011 Sciambi A, Pelliccione M, Bank SR, Gossard AC, Goldhaber-Gordon D. Erratum: “Virtual scanning tunneling microscopy: A local spectroscopic probe of two-dimensional electron systems” [Appl. Phys. Lett. 97, 132103 (2010)] Applied Physics Letters. 98: 089901. DOI: 10.1063/1.3554334  0.619
2011 Preu S, Dhler GH, Malzer S, Wang LJ, Gossard AC. Tunable, continuous-wave Terahertz photomixer sources and applications Journal of Applied Physics. 109. DOI: 10.1063/1.3552291  0.326
2011 Liu X, Ramu AT, Bowers JE, Palmstrøm CJ, Burke PG, Lu H, Gossard AC. Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectric applications Journal of Crystal Growth. 316: 56-59. DOI: 10.1016/J.Jcrysgro.2010.09.078  0.327
2010 Barthel C, Medford J, Marcus CM, Hanson MP, Gossard AC. Interlaced dynamical decoupling and coherent operation of a singlet-triplet qubit. Physical Review Letters. 105: 266808. PMID 21231704 DOI: 10.1103/Physrevlett.105.266808  0.571
2010 Reilly DJ, Taylor JM, Petta JR, Marcus CM, Hanson MP, Gossard AC. Exchange control of nuclear spin diffusion in a double quantum dot. Physical Review Letters. 104: 236802. PMID 20867261 DOI: 10.1103/Physrevlett.104.236802  0.616
2010 Sundaram M, Chalmers SA, Hopkins PF, Gossard AC. New quantum structures. Science (New York, N.Y.). 254: 1326-35. PMID 17773602 DOI: 10.1126/Science.254.5036.1326  0.414
2010 Petta JR, Lu H, Gossard AC. A coherent beam splitter for electronic spin states Science. 327: 669-672. DOI: 10.1126/Science.1183628  0.354
2010 Bauerschmidt S, Preu S, Malzer S, Döhler GH, Wang LJ, Lu H, Gossard AC. Continuous wave terahertz emitter arrays for spectroscopy and imaging applications Proceedings of Spie - the International Society For Optical Engineering. 7671. DOI: 10.1117/12.850090  0.309
2010 Zide JMO, Lu H, Onishi T, Schroeder JL, Bowers JE, Kobayashi NP, Sands TD, Gossard AC, Shakouri A. Novel metal/semiconductor nanocomposite and superlattice materials and devices for thermoelectrics Proceedings of Spie - the International Society For Optical Engineering. 7683. DOI: 10.1117/12.850058  0.333
2010 Zhao ZY, Schwagmann A, Ospald F, Von Klitzing K, Smet JH, Driscoll DC, Hanson MP, Lu H, Gossard AC. 1.55 μm photoconductive THz emitters based on ErAs:In 0.53Ga0.47As superlattices 2010 Ieee Photonics Society Winter Topicals Meeting Series, Wtm 2010. 44-45. DOI: 10.1109/PHOTWTM.2010.5421971  0.542
2010 Petersson KD, Petta JR, Lu H, Gossard AC. Quantum coherence in a one-electron semiconductor charge qubit Physical Review Letters. 105. DOI: 10.1103/Physrevlett.105.246804  0.437
2010 Laird EA, Taylor JM, Divincenzo DP, Marcus CM, Hanson MP, Gossard AC. Coherent spin manipulation in an exchange-only qubit Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.075403  0.552
2010 Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC. Probing semiconductor band structures and heterojunction interface properties with ballistic carrier emission: GaAs/ Alx Ga 1-x As as a model system Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.235325  0.591
2010 Bahk JH, Bian Z, Zebarjadi M, Zide JMO, Lu H, Xu D, Feser JP, Zeng G, Majumdar A, Gossard AC, Shakouri A, Bowers JE. Thermoelectric figure of merit of ( In0.53 Ga0.47 As )0.8 ( In0.52 Al0.48 As ) 0.2 III-V semiconductor alloys Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.235209  0.334
2010 Barthel C, Kjærgaard M, Medford J, Stopa M, Marcus CM, Hanson MP, Gossard AC. Fast sensing of double-dot charge arrangement and spin state with a radio-frequency sensor quantum dot Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.161308  0.597
2010 Yang S, Butov LV, Levitov LS, Simons BD, Gossard AC. Exciton front propagation in photoexcited GaAs quantum wells Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.115320  0.384
2010 Preu S, Malzer S, Döhler GH, Lu H, Gossard AC, Wang LJ. Efficient III-V tunneling diodes with ErAs recombination centers Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/11/115004  0.374
2010 Sciambi A, Pelliccione M, Bank SR, Gossard AC, Goldhaber-Gordon D. Virtual scanning tunneling microscopy: A local spectroscopic probe of two-dimensional electron systems Applied Physics Letters. 97. DOI: 10.1063/1.3492440  0.548
2010 Schwagmann A, Zhao ZY, Ospald F, Lu H, Driscoll DC, Hanson MP, Gossard AC, Smet JH. Terahertz emission characteristics of ErAs:InGaAs-based photoconductive antennas excited at 1.55 μm Applied Physics Letters. 96. DOI: 10.1063/1.3374401  0.613
2010 Buehl TE, Lebeau JM, Stemmer S, Scarpulla MA, Palmstrøm CJ, Gossard AC. Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy Journal of Crystal Growth. 312: 2089-2092. DOI: 10.1016/J.Jcrysgro.2010.04.031  0.799
2009 Barthel C, Reilly DJ, Marcus CM, Hanson MP, Gossard AC. Rapid single-shot measurement of a singlet-triplet qubit. Physical Review Letters. 103: 160503. PMID 19905680 DOI: 10.1103/Physrevlett.103.160503  0.59
2009 High AA, Thomas AK, Grosso G, Remeika M, Hammack AT, Meyertholen AD, Fogler MM, Butov LV, Hanson M, Gossard AC. Trapping indirect excitons in a GaAs quantum-well structure with a diamond-shaped electrostatic trap. Physical Review Letters. 103: 087403. PMID 19792761 DOI: 10.1103/Physrevlett.103.087403  0.63
2009 Baraskar AK, Wistey MA, Jain V, Singisetti U, Burek G, Thibeault BJ, Lee YJ, Gossard AC, Rodwell MJW. Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2036-2039. DOI: 10.1116/1.3182737  0.301
2009 Singisetti U, Wistey MA, Burek GJ, Baraskar AK, Thibeault BJ, Gossard AC, Rodwell MJW, Shin B, Kim EJ, McIntyre PC, Yu B, Yuan Y, Wang D, Taur Y, Asbeck P, et al. In0.53Ga0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth Ieee Electron Device Letters. 30: 1128-1130. DOI: 10.1109/Led.2009.2031304  0.306
2009 Lim J, Lee WR, Sim HS, Averitt RD, Zide JMO, Gossard AC, Ahn J. Effect of nonuniform continuum density of states on a Fano resonance in semiconductor quantum wells Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.035322  0.401
2009 Yamauchi Y, Hashisaka M, Nakamura S, Chida K, Kasai S, Ono T, Leturcq R, Ensslin K, Driscoll DC, Gossard AC, Kobayashi K. Universality of Bias- and Temperature-induced Dephasing in Ballistic Electronic Interferometers Physical Review B. 79: 161306. DOI: 10.1103/Physrevb.79.161306  0.35
2009 Gasser U, Gustavsson S, Küng B, Ensslin K, Ihn T, Driscoll DC, Gossard AC. Statistical electron excitation in a double quantum dot induced by two independent quantum point contacts Physical Review B. 79: 35303. DOI: 10.1103/Physrevb.79.035303  0.425
2009 Laird EA, Barthel C, Rashba EI, Marcus CM, Hanson MP, Gossard AC. A new mechanism of electric dipole spin resonance: Hyperfine coupling in quantum dots Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/6/064004  0.643
2009 Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC, Huang Y, Ryou JH, Dupuis RD. Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy Applied Physics Letters. 95. DOI: 10.1063/1.3224914  0.613
2009 Likovich EM, Russell KJ, Narayanamurti V, Lu H, Gossard AC. Direct injection tunnel spectroscopy of a p-n junction Applied Physics Letters. 95. DOI: 10.1063/1.3177191  0.423
2009 Azad AK, Chen HT, Kasarla SR, Taylor AJ, Tian Z, Lu X, Zhang W, Lu H, Gossard AC, O'Hara JF. Ultrafast optical control of terahertz surface plasmons in subwavelength hole arrays at room temperature Applied Physics Letters. 95. DOI: 10.1063/1.3168510  0.331
2009 Zebarjadi M, Esfarjani K, Shakouri A, Bahk J, Bian Z, Zeng G, Bowers J, Lu H, Zide J, Gossard A. Erratum: “Effect of nanoparticle scattering on thermoelectric power factor” [Appl. Phys. Lett. 94, 202105 (2009)] Applied Physics Letters. 95: 019901. DOI: 10.1063/1.3167770  0.725
2009 Gustavsson S, Leturcq R, Ihn T, Ensslin K, Gossard AC. Electrons in quantum dots: One by one Journal of Applied Physics. 105: 122401. DOI: 10.1063/1.3116227  0.435
2009 Koh YK, Singer SL, Kim W, Zide JMO, Lu H, Cahill DG, Majumdar A, Gossard AC. Comparison of the 3ω method and time-domain thermoreflectance for measurements of the cross-plane thermal conductivity of epitaxial semiconductors Journal of Applied Physics. 105. DOI: 10.1063/1.3078808  0.305
2009 Scarpulla MA, Gallinat CS, Mack S, Speck JS, Gossard AC. GdN (1 1 1) heteroepitaxy on GaN (0 0 0 1) by N2 plasma and NH3 molecular beam epitaxy Journal of Crystal Growth. 311: 1239-1244. DOI: 10.1016/J.Jcrysgro.2008.12.050  0.725
2009 Burek GJ, Wistey MA, Singisetti U, Nelson A, Thibeault BJ, Bank SR, Rodwell MJW, Gossard AC. Height-selective etching for regrowth of self-aligned contacts using MBE Journal of Crystal Growth. 311: 1984-1987. DOI: 10.1016/J.Jcrysgro.2008.11.012  0.562
2009 Singisetti U, Wistey MA, Burek GJ, Arkun E, Baraskar AK, Sun Y, Kiewra EW, Thibeault BJ, Gossard AC, Palmstrøm CJ, Rodwell MJW. InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 1394-1398. DOI: 10.1002/Pssc.200881532  0.343
2008 Reilly DJ, Taylor JM, Laird EA, Petta JR, Marcus CM, Hanson MP, Gossard AC. Measurement of temporal correlations of the overhauser field in a double quantum dot. Physical Review Letters. 101: 236803. PMID 19113577 DOI: 10.1103/Physrevlett.101.236803  0.61
2008 Reilly DJ, Taylor JM, Petta JR, Marcus CM, Hanson MP, Gossard AC. Suppressing spin qubit dephasing by nuclear state preparation. Science (New York, N.Y.). 321: 817-21. PMID 18687959 DOI: 10.1126/Science.1159221  0.576
2008 High AA, Novitskaya EE, Butov LV, Hanson M, Gossard AC. Control of exciton fluxes in an excitonic integrated circuit. Science (New York, N.Y.). 321: 229-31. PMID 18566248 DOI: 10.1126/Science.1157845  0.551
2008 Chen HT, Lu H, Azad AK, Averitt RD, Gossard AC, Trugman SA, O'Hara JF, Taylor AJ. Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays. Optics Express. 16: 7641-8. PMID 18545471 DOI: 10.1364/Oe.16.007641  0.364
2008 Preu S, Schwefel HG, Malzer S, Döhler GH, Wang LJ, Hanson M, Zimmerman JD, Gossard AC. Coupled whispering gallery mode resonators in the Terahertz frequency range. Optics Express. 16: 7336-43. PMID 18545439 DOI: 10.1364/Oe.16.007336  0.702
2008 Kim W, Singer SL, Majumdar A, Zide JM, Klenov D, Gossard AC, Stemmer S. Reducing thermal conductivity of crystalline solids at high temperature using embedded nanostructures. Nano Letters. 8: 2097-9. PMID 18507477 DOI: 10.1021/Nl080189T  0.75
2008 Petta JR, Taylor JM, Johnson AC, Yacoby A, Lukin MD, Marcus CM, Hanson MP, Gossard AC. Dynamic nuclear polarization with single electron spins. Physical Review Letters. 100: 067601. PMID 18352516 DOI: 10.1103/Physrevlett.100.067601  0.6
2008 Amasha S, Maclean K, Radu IP, Zumbühl DM, Kastner MA, Hanson MP, Gossard AC. Electrical control of spin relaxation in a quantum dot. Physical Review Letters. 100: 046803. PMID 18352316 DOI: 10.1103/Physrevlett.100.046803  0.567
2008 Gustavsson S, Studer M, Leturcq R, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Detecting single-electron tunneling involving virtual processes in real time Physical Review B. 78: 155309. DOI: 10.1103/Physrevb.78.155309  0.419
2008 Amasha S, MacLean K, Radu IP, Zumbühl DM, Kastner MA, Hanson MP, Gossard AC. Spin-dependent tunneling of single electrons into an empty quantum dot Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.041306  0.652
2008 Fogler MM, Yang S, Hammack AT, Butov LV, Gossard AC. Effect of spatial resolution on the estimates of the coherence length of excitons in quantum wells Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.035411  0.389
2008 Singisetti U, Wistey MA, Zimmerman JD, Thibeault BJ, Rodwell MJW, Gossard AC, Bank SR. Ultralow resistance in situ Ohmic contacts to InGaAs/InP Applied Physics Letters. 93. DOI: 10.1063/1.3013572  0.716
2008 Azad AK, Prasankumar RP, Talbayev D, Taylor AJ, Averitt RD, Zide JMO, Lu H, Gossard AC, O'Hara JF. Carrier dynamics in InGaAs with embedded ErAs nanoislands Applied Physics Letters. 93. DOI: 10.1063/1.2989127  0.342
2008 Winbow AG, Butov LV, Gossard AC. Photon storage with subnanosecond readout rise time in coupled quantum wells Journal of Applied Physics. 104. DOI: 10.1063/1.2978214  0.388
2008 Chen HT, Palit S, Tyler T, Bingham CM, Zide JMO, O'Hara JF, Smith DR, Gossard AC, Averitt RD, Padilla WJ, Jokerst NM, Taylor AJ. Hybrid metamaterials enable fast electrical modulation of freely propagating terahertz waves Applied Physics Letters. 93. DOI: 10.1063/1.2978071  0.317
2008 Kim S, Zimmerman JD, Focardi P, Gossard AC, Wu DH, Sherwin MS. Room temperature terahertz detection based on bulk plasmons in antenna-coupled GaAs field effect transistors Applied Physics Letters. 92. DOI: 10.1063/1.2947587  0.667
2008 Preu S, Malzer S, Döhler GH, Zhao QZ, Hanson M, Zimmerman JD, Gossard AC, Wang LJ. Interference between two coherently driven monochromatic terahertz sources Applied Physics Letters. 92. DOI: 10.1063/1.2938874  0.709
2008 Bell L, Rogers J, Heyman JN, Zimmerman JD, Gossard AC. Terahertz emission by quantum beating in a modulation doped parabolic quantum well Applied Physics Letters. 92. DOI: 10.1063/1.2908868  0.692
2008 Scarpulla MA, Zide JMO, LeBeau JM, Van De Walle CG, Gossard AC, Delaney KT. Near-infrared absorption and semimetal-semiconductor transition in 2 nm ErAs nanoparticles embedded in GaAs and AlAs Applied Physics Letters. 92. DOI: 10.1063/1.2908213  0.607
2008 Ospald F, Maryenko D, Von Klitzing K, Driscoll DC, Hanson MP, Lu H, Gossard AC, Smet JH. 1.55 μm ultrafast photoconductive switches based on ErAs:InGaAs Applied Physics Letters. 92. DOI: 10.1063/1.2907335  0.598
2008 Gildemeister AE, Ihn T, Sigrist M, Ensslin K, Driscoll DC, Gossard AC. Lever arm of a metallic tip in scanning gate experiments Physica E: Low-Dimensional Systems and Nanostructures. 40: 1640-1641. DOI: 10.1016/J.Physe.2007.10.033  0.388
2008 Gustavsson S, Leturcq R, Studer M, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Time-resolved interference experiments in a solid state environment Physica E-Low-Dimensional Systems & Nanostructures. 40: 1044-1047. DOI: 10.1016/J.Physe.2007.09.209  0.41
2007 Laird EA, Barthel C, Rashba EI, Marcus CM, Hanson MP, Gossard AC. Hyperfine-mediated gate-driven electron spin resonance. Physical Review Letters. 99: 246601. PMID 18233467 DOI: 10.1103/Physrevlett.99.246601  0.615
2007 Zhang Y, DiCarlo L, McClure DT, Yamamoto M, Tarucha S, Marcus CM, Hanson MP, Gossard AC. Noise correlations in a Coulomb-blockaded quantum dot. Physical Review Letters. 99: 036603. PMID 17678305 DOI: 10.1103/Physrevlett.99.036603  0.567
2007 Chen HT, Padilla WJ, Zide JM, Bank SR, Gossard AC, Taylor AJ, Averitt RD. Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/GaAs nanoisland superlattices. Optics Letters. 32: 1620-2. PMID 17572725 DOI: 10.1364/Ol.32.001620  0.796
2007 Winbow AG, Hammack AT, Butov LV, Gossard AC. Photon storage with nanosecond switching in coupled quantum well nanostructures. Nano Letters. 7: 1349-51. PMID 17425373 DOI: 10.1021/Nl070386C  0.372
2007 McClure DT, Dicarlo L, Zhang Y, Engel HA, Marcus CM, Hanson MP, Gossard AC. Tunable noise cross correlations in a double quantum dot. Physical Review Letters. 98: 056801. PMID 17358883 DOI: 10.1103/Physrevlett.98.056801  0.597
2007 MacLean K, Amasha S, Radu IP, Zumbühl DM, Kastner MA, Hanson MP, Gossard AC. Energy-dependent tunneling in a quantum dot. Physical Review Letters. 98: 036802. PMID 17358709 DOI: 10.1103/Physrevlett.98.036802  0.651
2007 Zeng G, Bahk J, Bowers JE, Lu H, Zide JMO, Gossard AC, Singh R, Bian Z, Shakouri A, Singer SL, Kim W, Majumdar A. Segmented Power Generator Modules of Bi2Te3 and ErAs:InGaAlAs Embedded with ErAs Nanoparticles Mrs Proceedings. 1044. DOI: 10.1557/Proc-1044-U10-06  0.317
2007 Ihn T, Ellenberger C, Ensslin K, Yannouleas C, Landman U, Driscoll DC, Gossard AC. Quantum dots based on parabolic quantum wells: Importance of electronic correlations International Journal of Modern Physics B. 21: 1316-1325. DOI: 10.1142/S0217979207042781  0.444
2007 Brown ER, Young AC, Bjarnason JE, Zimmerman JD, Gossard AC, Kazemi H. Millimeter and sub-millimeter wave performance of an ERAS:Inalgaas Schottky diode coupled to a single-turn square spiral International Journal of High Speed Electronics and Systems. 17: 383-394. DOI: 10.1142/S0129156407004576  0.624
2007 Landy NI, Chen HT, O'Hara JF, Zide JMO, Gossard AC, Highstrete C, Lee M, Taylor AJ, Averitt RD, Padilla WJ. Terahertz metamaterials for active, tunable, and dynamical devices Proceedings of Spie - the International Society For Optical Engineering. 6581. DOI: 10.1117/12.724394  0.305
2007 Bian Z, Zebarjadi M, Singh R, Ezzahri Y, Shakouri A, Zeng G, Bahk JH, Bowers JE, Zide JMO, Gossard AC. Cross-plane Seebeck coefficient and Lorenz number in superlattices Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.205311  0.326
2007 Hammack AT, Butov LV, Mouchliadis L, Ivanov AL, Gossard AC. Kinetics of indirect excitons in an optically induced trap in GaAs quantum wells Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.193308  0.378
2007 Yi W, Narayanamurti V, Zide JMO, Bank SR, Gossard AC. Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.115333  0.634
2007 Stern NP, Myers RC, Poggio M, Gossard AC, Awschalom DD. Confinement engineering of s-d exchange interactions in Ga1-x Mnx As/Aly Ga1-y As quantum wells Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.045329  0.397
2007 Yang S, Mintsev AV, Hammack AT, Butov LV, Gossard AC. Repulsive interaction in the macroscopically ordered exciton state in GaAs Alx Ga1-x As coupled quantum well structures Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.033311  0.391
2007 Schleser R, Kicin S, Roth C, Ebneter C, Leturcq R, Ensslin K, Driscoll DC, Gossard AC. Influence of HCl etching on the electronic properties of LAO-defined nanostructures Semiconductor Science and Technology. 22: 337-341. DOI: 10.1088/0268-1242/22/4/007  0.327
2007 Crook AM, Lind E, Griffith Z, Rodwell MJW, Zimmerman JD, Gossard AC, Bank SR. Low resistance, nonalloyed Ohmic contacts to InGaAs Applied Physics Letters. 91. DOI: 10.1063/1.2806235  0.708
2007 Gildemeister AE, Ihn T, Schleser R, Ensslin K, Driscoll DC, Gossard AC. Imaging a coupled quantum dot-quantum point contact system Journal of Applied Physics. 102. DOI: 10.1063/1.2787163  0.424
2007 Hanson MP, Gossard AC, Brown ER. Infrared surface plasmon resonances due to Er-V semimetallic nanoparticles in III-V semiconductor matrices Journal of Applied Physics. 102. DOI: 10.1063/1.2761846  0.589
2007 Preu S, Renner FH, Malzer S, Döhler GH, Wang LJ, Hanson M, Gossard AC, Wilkinson TLJ, Brown ER. Efficient terahertz emission from ballistic transport enhanced n-i-p-n-i-p superlattice photomixers Applied Physics Letters. 90: 212115. DOI: 10.1063/1.2743400  0.572
2007 Gildemeister AE, Ihn T, Sigrist M, Ensslin K, Driscoll DC, Gossard AC. In situ treatment of a scanning gate microscopy tip Applied Physics Letters. 90. DOI: 10.1063/1.2742314  0.367
2007 Young AC, Zimmerman JD, Brown ER, Gossard AC. Low-frequency noise in epitaxially grown Schottky junctions Journal of Applied Physics. 101. DOI: 10.1063/1.2721774  0.636
2007 Klenov D, LeBeau J, Zide J, Gossard A, Stemmer S. Combination of TEM and STEM to Investigate the Self-Assembly of Epitaxial Nanocomposites Microscopy and Microanalysis. 13. DOI: 10.1017/S1431927607077252  0.722
2007 Hanson MP, Bank SR, Zide JMO, Zimmerman JD, Gossard AC. Controlling electronic properties of epitaxial nanocomposites of dissimilar materials Journal of Crystal Growth. 301: 4-9. DOI: 10.1016/J.Jcrysgro.2006.11.250  0.791
2006 Yang S, Hammack AT, Fogler MM, Butov LV, Gossard AC. Coherence length of cold exciton gases in coupled quantum wells. Physical Review Letters. 97: 187402. PMID 17155574 DOI: 10.1103/Physrevlett.97.187402  0.411
2006 Chen HT, Padilla WJ, Zide JM, Gossard AC, Taylor AJ, Averitt RD. Active terahertz metamaterial devices. Nature. 444: 597-600. PMID 17136089 DOI: 10.1038/nature05343  0.75
2006 Laird EA, Petta JR, Johnson AC, Marcus CM, Yacoby A, Hanson MP, Gossard AC. Effect of exchange interaction on spin dephasing in a double quantum dot. Physical Review Letters. 97: 056801. PMID 17026127 DOI: 10.1103/Physrevlett.97.056801  0.639
2006 Hammack AT, Griswold M, Butov LV, Smallwood LE, Ivanov AL, Gossard AC. Trapping of cold excitons in quantum well structures with laser light. Physical Review Letters. 96: 227402. PMID 16803343 DOI: 10.1103/Physrevlett.96.227402  0.351
2006 Zumbühl DM, Marcus CM, Hanson MP, Gossard AC. Asymmetry of nonlinear transport and electron interactions in quantum dots. Physical Review Letters. 96: 206802. PMID 16803193 DOI: 10.1103/Physrevlett.96.206802  0.609
2006 Vidan A, Stopa M, Westervelt RM, Hanson M, Gossard AC. Multipeak Kondo effect in one- and two-electron quantum dots. Physical Review Letters. 96: 156802. PMID 16712183 DOI: 10.1103/Physrevlett.96.156802  0.671
2006 Taylor ZD, Brown ER, Bjarnason JE, Hanson MP, Gossard AC. Resonant-optical-cavity photoconductive switch with 0.5% conversion efficiency and 1.0 W peak power. Optics Letters. 31: 1729-31. PMID 16688276 DOI: 10.1364/OL.31.001729  0.527
2006 Ghosh S, Wang WH, Mendoza FM, Myers RC, Li X, Samarth N, Gossard AC, Awschalom DD. Enhancement of spin coherence using Q-factor engineering in semiconductor microdisc lasers. Nature Materials. 5: 261-4. PMID 16565713 DOI: 10.1038/Nmat1587  0.401
2006 Kim W, Zide J, Gossard A, Klenov D, Stemmer S, Shakouri A, Majumdar A. Thermal conductivity reduction and thermoelectric figure of merit increase by embedding nanoparticles in crystalline semiconductors. Physical Review Letters. 96: 045901. PMID 16486849 DOI: 10.1103/Physrevlett.96.045901  0.745
2006 Ivanov AL, Smallwood LE, Hammack AT, Yang S, Butov LV, Gossard AC. Origin of the inner ring in photoluminescence patterns of quantum well excitons Europhysics Letters. 73: 920-926. DOI: 10.1209/Epl/I2006-10002-4  0.376
2006 Brown ER, Kazemi H, Young AC, Zimmerman JD, Wilkinson TLJ, Bjarnason JE, Hacker JB, Gossard AC. High-sensitivity, quasi-optically-coupled semimetal-semiconductor detectors at 104 GHz Proceedings of Spie - the International Society For Optical Engineering. 6212. DOI: 10.1117/12.666473  0.594
2006 Zimmerman JD, Gossard AC, Young AC, Miller MP, Brown ER. ErAs island-stacking growth technique for engineering textured Schottky interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1483-1487. DOI: 10.1116/1.2203642  0.635
2006 Bloom FL, Young AC, Myers RC, Brown ER, Gossard AC, Gwinn EG. Tunneling through MnAs particles at a GaAs p+ n+ junction Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1639-1643. DOI: 10.1116/1.2190680  0.328
2006 Zide JMO, Vashaee D, Bian ZX, Zeng G, Bowers JE, Shakouri A, Gossard AC. Demonstration of electron filtering to increase the Seebeck coefficient in In0.53 Ga0.47 As/In0.53 Ga0.28 Al0.19 As superlattices Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.205335  0.301
2006 Russell KJ, Narayanamurti V, Appelbaum I, Hanson MP, Gossard AC. Hot-electron mean free path of ErAs thin films grown on GaAs determined by metal-base transistor ballistic electron emission spectroscopy Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.205330  0.601
2006 Gustavsson S, Leturcq R, Simovič B, Schleser R, Studerus P, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Counting statistics and super-Poissonian noise in a quantum dot : Time-resolved measurements of electron transport Physical Review B. 74: 195305. DOI: 10.1103/Physrevb.74.195305  0.429
2006 Baumgartner A, Ihn T, Ensslin K, Papp G, Peeters F, Maranowski K, Gossard AC. Classical Hall effect in scanning gate experiments Physical Review B. 74. DOI: 10.1103/Physrevb.74.165426  0.637
2006 Myers RC, Sheu BL, Jackson AW, Gossard AC, Schiffer P, Samarth N, Awschalom DD. Antisite effect on hole-mediated ferromagnetism in (Ga,Mn)As Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.155203  0.346
2006 Sih V, Knotz H, Stephens J, Horowitz VR, Gossard AC, Awschalom DD. Mechanical control of spin-orbit splitting in GaAs and In0.04 Ga0.96 As epilayers Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.241316  0.311
2006 Lau WH, Sih V, Stern NP, Myers RC, Buell DA, Gossard AC, Awschalom DD. Room temperature electron spin coherence in telecom-wavelength quaternary quantum wells Applied Physics Letters. 89. DOI: 10.1063/1.2358931  0.419
2006 Carmeli I, Bloom F, Gwinn EG, Kreutz TC, Scoby C, Gossard AC, Ray SG, Naaman R. Molecular enhancement of ferromagnetism in GaAs/GaMnAs heterostructures Applied Physics Letters. 89. DOI: 10.1063/1.2236935  0.313
2006 O'Hara JF, Taylor AJ, Averitt RD, Zide JM, Gossard AC. Enhanced terahertz detection via ErAs:GaAs nanoisland superlattices Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1063/1.2216026  0.761
2006 Kihara Rurimo G, Schardt M, Quabis S, Malzer S, Dotzler C, Winkler A, Leuchs G, Döhler GH, Driscoll D, Hanson M, Gossard AC, Pereira SF. Using a quantum well heterostructure to study the longitudinal and transverse electric field components of a strongly focused laser beam Journal of Applied Physics. 100: 023112. DOI: 10.1063/1.2214207  0.621
2006 Gelfand IJ, Amasha S, Zumbühl DM, Kastner MA, Kadow C, Gossard AC. Surface-gated quantum hall effect in an inas heterostructure Applied Physics Letters. 88. DOI: 10.1063/1.2210289  0.674
2006 Yi W, Appelbaum I, Russell KJ, Narayanamurti V, Schalek R, Hanson MP, Gossard AC. Vertically integrated optics for ballistic electron emission luminescence: Device and microscopy characterizations Journal of Applied Physics. 100. DOI: 10.1063/1.2208738  0.648
2006 Kim W, Singer SL, Majumdar A, Vashaee D, Bian Z, Shakouri A, Zeng G, Bowers JE, Zide JMO, Gossard AC. Cross-plane lattice and electronic thermal conductivities of ErAs:InGaAsInGaAlAs superlattices Applied Physics Letters. 88. DOI: 10.1063/1.2207829  0.35
2006 Zide JMO, Kleiman-Shwarsctein A, Strandwitz NC, Zimmerman JD, Steenblock-Smith T, Gossard AC, Forman A, Ivanovskaya A, Stucky GD. Increased efficiency in multijunction solar cells through the incorporation of semimetallic ErAs nanoparticles into the tunnel junction Applied Physics Letters. 88. DOI: 10.1063/1.2196059  0.634
2006 Trumm S, Betz M, Sotier F, Leitenstorfer A, Schwanhäußer A, Eckardt M, Schmidt O, Malzer S, Döhler GH, Hanson M, Driscoll D, Gossard AC. Ultrafast spectroscopy of impact ionization and avalanche multiplication in GaAs Applied Physics Letters. 88: 132113. DOI: 10.1063/1.2191880  0.617
2006 Zeng G, Bowers JE, Zide JMO, Gossard AC, Kim W, Singer S, Majumdar A, Singh R, Bian Z, Zhang Y, Shakouri A. ErAs:InGaAs∕InGaAlAs superlattice thin-film power generator array Applied Physics Letters. 88: 113502. DOI: 10.1063/1.2186387  0.314
2006 Hammack AT, Gippius NA, Yang S, Andreev GO, Butov LV, Hanson M, Gossard AC. Excitons in electrostatic traps Journal of Applied Physics. 99. DOI: 10.1063/1.2181276  0.631
2006 Graf D, Frommenwiler M, Studerus P, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Local oxidation of Ga[Al]As heterostructures with modulated tip-sample voltages Journal of Applied Physics. 99: 53707. DOI: 10.1063/1.2176162  0.386
2006 Young AC, Zimmerman JD, Brown ER, Gossard AC. 1/f noise in all-epitaxial metal-semiconductor diodes Applied Physics Letters. 88. DOI: 10.1063/1.2174837  0.634
2006 Poggio M, Myers RC, Steeves GM, Stern NP, Gossard AC, Awschalom DD. Nuclear and ion spins in semiconductor nanostructures Physica E: Low-Dimensional Systems and Nanostructures. 35: 264-271. DOI: 10.1016/J.Physe.2006.08.032  0.378
2006 Leturcq R, Bianchetti R, Götz G, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Coherent nonlinear transport in quantum rings Physica E-Low-Dimensional Systems & Nanostructures. 35: 327-331. DOI: 10.1016/J.Physe.2006.08.023  0.356
2006 Petta JR, Johnson AC, Taylor JM, Laird EA, Yacoby A, Lukin MD, Marcus CM, Hanson MP, Gossard AC. Preparing, manipulating, and measuring quantum states on a chip Physica E: Low-Dimensional Systems and Nanostructures. 35: 251-256. DOI: 10.1016/J.Physe.2006.08.020  0.62
2006 Leturcq R, Schmid L, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Asymmetries of the conductance matrix in a three-terminal quantum ring in the Coulomb blockade regime Physica E-Low-Dimensional Systems & Nanostructures. 34: 445-448. DOI: 10.1016/J.Physe.2006.03.106  0.397
2006 Schardt M, Winkler A, Rurimo G, Hanson M, Driscoll D, Quabis S, Malzer S, Leuchs G, Döhler G, Gossard A. TE- and TM-polarization-resolved spectroscopy on quantum wells under normal incidence Physica E: Low-Dimensional Systems and Nanostructures. 32: 241-244. DOI: 10.1016/J.Physe.2005.12.168  0.625
2006 Doehler GH, Eckardt M, Schwanhaeusser A, Renner F, Malzer S, Trumm S, Betz M, Sotier F, Leitenstorfer A, Loata G, Loeffler T, Roskos H, Mueller T, Unterrainer K, Driscoll D, ... ... Gossard AC, et al. Ballistic transport in semiconductor nanostructures: From quasi-classical oscillations to novel THz-emitters Pramana. 67: 199-205. DOI: 10.1007/S12043-006-0050-9  0.607
2006 Dolgopolov VT, Deviatov EV, Khrapai VS, Reuter D, Wieck AD, Wixforth A, Campman KL, Gossard AC. Spin ordering: Two different scenarios for the single and doable layer structures in the fractional and integer quantum Hall effect regimes Physica Status Solidi (B) Basic Research. 243: 3648-3652. DOI: 10.1002/Pssb.200642238  0.386
2006 Leturcq R, Schmid L, Ensslin K, Driscoll DC, Gossard AC. Kondo effect in a three-terminal quantum ring Physica Status Solidi B-Basic Solid State Physics. 243: 3653-3657. DOI: 10.1002/Pssb.200642182  0.408
2005 Heller EJ, Aidala KE, LeRoy BJ, Bleszynski AC, Kalben A, Westervelt RM, Maranowski KD, Gossard AC. Thermal averages in a quantum point contact with a single coherent wave packet. Nano Letters. 5: 1285-92. PMID 16178225 DOI: 10.1021/nl0504585  0.561
2005 Petta JR, Johnson AC, Taylor JM, Laird EA, Yacoby A, Lukin MD, Marcus CM, Hanson MP, Gossard AC. Coherent manipulation of coupled electron spins in semiconductor quantum dots. Science (New York, N.Y.). 309: 2180-4. PMID 16141370 DOI: 10.1126/Science.1116955  0.586
2005 Schleser R, Ihn T, Ruh E, Ensslin K, Tews M, Pfannkuche D, Driscoll DC, Gossard AC. Cotunneling-Mediated Transport through Excited States in the Coulomb-Blockade Regime Physical Review Letters. 94: 206805. PMID 16090270 DOI: 10.1103/Physrevlett.94.206805  0.384
2005 Johnson AC, Petta JR, Taylor JM, Yacoby A, Lukin MD, Marcus CM, Hanson MP, Gossard AC. Triplet-singlet spin relaxation via nuclei in a double quantum dot. Nature. 435: 925-8. PMID 15944715 DOI: 10.1038/Nature03815  0.543
2005 LeRoy BJ, Bleszynski AC, Aidala KE, Westervelt RM, Kalben A, Heller EJ, Shaw SE, Maranowski KD, Gossard AC. Imaging electron interferometer. Physical Review Letters. 94: 126801. PMID 15903945 DOI: 10.1103/Physrevlett.94.126801  0.659
2005 Fallahi P, Bleszynski AC, Westervelt RM, Huang J, Walls JD, Heller EJ, Hanson M, Gossard AC. Imaging a single-electron quantum dot. Nano Letters. 5: 223-6. PMID 15794600 DOI: 10.1021/Nl048405V  0.624
2005 Zeng G, Bahk J, Bowers JE, Zide JMO, Gossard AC, Zhang Y, Singh R, Bian Z, Shakouri A, Kim W, Singer S, Majumdar A. 400 element ErAs:InGaAs/InGaAlAs superlattice power generator Mrs Proceedings. 886. DOI: 10.1557/Proc-0886-F12-06  0.322
2005 Shakouri A, Bian Z, Singh R, Zhang Y, Vashaee D, Humphrey TE, Schmidt H, Zide JM, Zeng G, Bahk J, Gossard AC, Bowers JE, Rawat V, Sands TD, Kim W, et al. Solid-State and Vacuum Thermionic Energy Conversion Mrs Proceedings. 886. DOI: 10.1557/PROC-0886-F07-01  0.762
2005 Singh R, Bian Z, Zeng G, Zide J, Christofferson J, Chou H, Gossard A, Bowers J, Shakouri A. Transient Harman Measurement of the Cross-plane ZT of InGaAs/InGaAlAs Superlattices with Embedded ErAs Nanoparticles Mrs Proceedings. 886. DOI: 10.1557/Proc-0886-F04-04  0.771
2005 Kazemi H, Zimmerman JD, Brown ER, Gossard AC, Boreman GD, Hacker JB, Lail B, Middleton C. First MMW characterization of ErAs/InAlGaAs/InP Semimetal-Semiconductor- Schottky diode (S 3) detectors for passive millimeter-wave and infrared imaging Proceedings of Spie - the International Society For Optical Engineering. 5789: 80-83. DOI: 10.1117/12.604118  0.613
2005 Zimmerman JD, Brown ER, Gossard AC. Tunable all epitaxial semimetal-semiconductor Schottky diode system: ErAs on InAlGaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1929-1935. DOI: 10.1116/1.2013312  0.652
2005 Kadow C, Gossard AC, Rodwell MJW. Regrown-emitter InP heterojunction bisucpolar transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1140-1143. DOI: 10.1116/1.1885014  0.656
2005 Kadow C, Dahlström M, Bae JU, Lin HK, Gossard AC, Rodwell MJW, Brar B, Sullivan GJ, Nagy G, Bergman JI. n+-InAs-InAlAs recess gate technology for InAs-channel millimeter-wave HFETs Ieee Transactions On Electron Devices. 52: 151-158. DOI: 10.1109/Ted.2004.842534  0.645
2005 Young AC, Zimmerman JD, Brown ER, Gossard AC. Semimetal-semiconductor junctions for low noise zero-bias rectifiers Ieee Mtt-S International Microwave Symposium Digest. 2005: 447-450. DOI: 10.1109/MWSYM.2005.1516625  0.579
2005 Poggio M, Myers RC, Stern NP, Gossard AC, Awschalom DD. Structural, electrical, and magneto-optical characterization of paramagnetic GaMnAs quantum wells Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.235313  0.421
2005 Granger G, Kastner MA, Radu I, Hanson MP, Gossard AC. Two-stage Kondo effect in a four-electron artificial atom Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.165309  0.587
2005 Petta JR, Johnson AC, Yacoby A, Marcus CM, Hanson MP, Gossard AC. Pulsed-gate measurements of the singlet-triplet relaxation time in a two-electron double quantum dot Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.161301  0.636
2005 Schleser R, Ruh E, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Finite-bias charge detection in a quantum dot Physical Review B. 72: 35312. DOI: 10.1103/Physrevb.72.035312  0.408
2005 Russell KJ, Appelbaum I, Narayanamurti V, Hanson MP, Gossard AC. Transverse momentum nonconservation at the ErAs/GaAs interface Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.121311  0.557
2005 Johnson AC, Marcus CM, Hanson MP, Gossard AC. Charge sensing of excited states in an isolated double quantum dot Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.115333  0.636
2005 Dorn A, Bieri E, Ihn T, Ensslin K, Driscoll DD, Gossard AC. Interplay between the periodic potential modulation and random background scatterers in an antidot lattice Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.035343  0.358
2005 Döhler GH, Renner F, Klar O, Eckardt M, Schwanhäußer A, Malzer S, Driscoll D, Hanson M, Gossard AC, Loata G, Löffler T, Roskos H. THz-photomixer based on quasi-ballistic transport Semiconductor Science and Technology. 20. DOI: 10.1088/0268-1242/20/7/007  0.568
2005 Young AC, Zimmerman JD, Brown ER, Gossard AC. Semimetal-semiconductor rectifiers for sensitive room-temperature microwave detectors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2112201  0.63
2005 Zide JM, Klenov DO, Stemmer S, Gossard AC, Zeng G, Bowers JE, Vashaee D, Shakouri A. Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles Applied Physics Letters. 87. DOI: 10.1063/1.2043241  0.763
2005 Kato YK, Myers RC, Gossard AC, Awschalom DD. Electrical initialization and manipulation of electron spins in an L-shaped strained n-InGaAs channel Applied Physics Letters. 87. DOI: 10.1063/1.1994930  0.3
2005 Hanson MP, Driscoll DC, Brown ER, Gossard AC. Strong sub-bandgap absorption in GaSb/ErSb nanocomposites attributed to plasma resonances of semimetallic ErSb nanoparticles Aip Conference Proceedings. 772: 845-846. DOI: 10.1063/1.1994370  0.562
2005 Klenov DO, Zide JM, Zimmerman JD, Gossard AC, Stemmer S. Interface atomic structure of epitaxial ErAs layers on (001)In 0.53Ga 0.47As and GaAs Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1947910  0.631
2005 Prasankumar RP, Scopatz A, Hilton DJ, Taylor AJ, Averitt RD, Zide JM, Gossard AC. Carrier dynamics in self-assembled ErAs nanoislands embedded in GaAs measured by optical-pump terahertz-probe spectroscopy Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1923174  0.364
2005 Kato YK, Myers RC, Gossard AC, Awschalom DD. Electron spin interferometry using a semiconductor ring structure Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1906301  0.322
2005 Trumm S, Betz M, Sotier F, Leitenstorfer A, Schwanhäußer A, Eckardt M, Malzer S, Hanson M, Driscoll D, Gossard AC, Döhler GH. Femtosecond spectroscopy of unipolar nanometer-scale high-field transport of holes in Al0.08Ga0.92As Applied Physics Letters. 86: 142105. DOI: 10.1063/1.1898442  0.628
2005 Klenov DO, Driscoll DC, Gossard AC, Stemmer S. Scanning transmission electron microscopy of ErAs nanoparticles embedded in epitaxial in 0.53Ga 0.47as layers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1885172  0.318
2005 Appelbaum I, Yi W, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Vertically integrated optics for ballistic electron emission luminescence microscopy Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1861961  0.599
2005 Driscoll DC, Hanson MP, Gossard AC, Brown ER. Ultrafast photoresponse at 1.55 μm in InGaAs with embedded semimetallic ErAs nanoparticles Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1852092  0.609
2005 Lin HK, Kadow C, Bae JU, Rodwell MJW, Gossard AC, Brar B, Sullivan G, Nagy G, Bergman J. Design and characteristics of strained InAs/InAlAs composite-channel heterostructure field-effect transistors Journal of Applied Physics. 97. DOI: 10.1063/1.1831545  0.644
2005 Driscoll DC, Hanson MP, Gossard AC. Carrier compensation in semiconductors with buried metallic nanoparticles Journal of Applied Physics. 97. DOI: 10.1063/1.1808473  0.625
2005 Klenov DO, Driscoll DC, Zimmerman JD, Zide JD, Gossard AC, Stemmer S. Characterization of Epitaxial Semimetallic ErAs Particles in an In0.53Ga0.47As Matrix by High-Angle Annular Dark-Field Imaging Microscopy and Microanalysis. 11. DOI: 10.1017/S1431927605503805  0.605
2005 Vidan A, Westervelt RM, Stopa M, Hanson M, Gossard AC. Charging and spin effects in triple dot artificial molecules Journal of Superconductivity and Novel Magnetism. 18: 223-227. DOI: 10.1007/S10948-005-3373-8  0.664
2005 Brown ER, Bjarnason JE, Wilkinson TLJ, Driscoll DC, Hanson M, Gossard AC. Bright MM-wave and THz luminescence by down-conversion of near-IR amplified-spontaneous-emission International Journal of Infrared and Millimeter Waves. 26: 1691-1702. DOI: 10.1007/S10762-005-0290-7  0.573
2005 Renner F, Eckardt M, Schwanhäußer A, Klar O, Malzer S, Döhler GH, Loata G, Löffler T, Roskos H, Hanson M, Driscoll D, Gossard AC. THz-emitter based on ballistic transport in nano-pin diodes Physica Status Solidi (a). 202: 965-969. DOI: 10.1002/Pssa.200460706  0.601
2004 Zumbühl DM, Marcus CM, Hanson MP, Gossard AC. Cotunneling spectroscopy in few-electron quantum dots. Physical Review Letters. 93: 256801. PMID 15697924 DOI: 10.1103/Physrevlett.93.256801  0.622
2004 Kato YK, Myers RC, Gossard AC, Awschalom DD. Observation of the spin Hall effect in semiconductors. Science (New York, N.Y.). 306: 1910-3. PMID 15539563 DOI: 10.1126/Science.1105514  0.303
2004 Petta JR, Johnson AC, Marcus CM, Hanson MP, Gossard AC. Manipulation of a single charge in a double quantum dot. Physical Review Letters. 93: 186802. PMID 15525191 DOI: 10.1103/Physrevlett.93.186802  0.594
2004 Kato YK, Myers RC, Gossard AC, Awschalom DD. Current-induced spin polarization in strained semiconductors. Physical Review Letters. 93: 176601. PMID 15525098 DOI: 10.1103/Physrevlett.93.176601  0.313
2004 Johnson AC, Marcus CM, Hanson MP, Gossard AC. Coulomb-modified Fano resonance in a one-lead quantum dot. Physical Review Letters. 93: 106803. PMID 15447436 DOI: 10.1103/Physrevlett.93.106803  0.592
2004 Stephens J, Berezovsky J, McGuire JP, Sham LJ, Gossard AC, Awschalom DD. Spin accumulation in forward-biased MnAs/GaAs Schottky diodes. Physical Review Letters. 93: 097602. PMID 15447140 DOI: 10.1103/Physrevlett.93.097602  0.326
2004 DiCarlo L, Lynch HJ, Johnson AC, Childress LI, Crockett K, Marcus CM, Hanson MP, Gossard AC. Differential charge sensing and charge delocalization in a tunable double quantum dot. Physical Review Letters. 92: 226801. PMID 15245249 DOI: 10.1103/Physrevlett.92.226801  0.572
2004 Craig NJ, Taylor JM, Lester EA, Marcus CM, Hanson MP, Gossard AC. Tunable nonlocal spin control in a coupled-quantum dot system. Science (New York, N.Y.). 304: 565-7. PMID 15044752 DOI: 10.1126/Science.1095452  0.616
2004 Kato Y, Myers RC, Gossard AC, Awschalom DD. Coherent spin manipulation without magnetic fields in strained semiconductors. Nature. 427: 50-3. PMID 14702080 DOI: 10.1038/Nature02202  0.34
2004 Yi W, Appelbaum I, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Ballistic Electron Emission Luminescence of InAs Quantum Dots Embedded in a GaAs/Al x Ga 1− x As Heterostructure Mrs Proceedings. 838. DOI: 10.1557/Proc-838-O11.2  0.679
2004 Leturcq R, Graf D, Ihn T, Ensslin K, Driscoll DD, Gossard AC. Multi-terminal transport through a quantum dot in the Coulomb-blockade regime Europhysics Letters. 67: 439-445. DOI: 10.1209/Epl/I2004-10084-X  0.425
2004 Jho YD, Wang X, Kyrychenko FV, Reitze DH, Stanton CJ, Kono J, Wei X, Crooker SA, Kadow C, Gossard AC. Interband magneto-spectroscopy of a high-density two-dimensional electron gas in a strong in-plane magnetic field International Journal of Modern Physics B. 18: 3831-3834. DOI: 10.1142/S0217979204027542  0.665
2004 Deviatov EV, Würtz A, Lorke A, Melnikov MY, Dolgopolov VT, Wixforth A, Campman KL, Gossard AC. Manifestation of the bulk phase transition in the edge energy spectrum in a two-dimensional bilayer electron system Jetp Letters. 79: 171-176. DOI: 10.1134/1.1738717  0.359
2004 Lai CW, Zoch J, Gossard AC, Chemla DS. Phase Diagram of Degenerate Exciton Systems Science. 303: 503-506. DOI: 10.1126/Science.1092691  0.366
2004 Hacker JB, Bergman J, Nagy G, Sullivan G, Kadow C, Lin HK, Gossard AC, Rodwell M, Brar B. An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier Ieee Microwave and Wireless Components Letters. 14: 156-158. DOI: 10.1109/Lmwc.2004.827132  0.661
2004 Griffith Z, Kim YM, Dahlström M, Gossard AC, Rodwell MJW. InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and fτ, fmax > 268 GHz Ieee Electron Device Letters. 25: 675-677. DOI: 10.1109/Led.2004.835160  0.352
2004 Wei Y, Scott DW, Dong Y, Gossard AC, Rodwell MJ. A 160-GHz fT and 140-GHz fMAX submicrometer InP DHBT in MBE regrown-emitter technology Ieee Electron Device Letters. 25: 232-234. DOI: 10.1109/Led.2004.826521  0.329
2004 Kim YM, Griffith Z, Rodwell MJW, Gossard AC. High bandwidth and low-leakage current InP-In0.53Ga0.47As-InP DBHTs on GaAs substrates Ieee Electron Device Letters. 25: 170-172. DOI: 10.1109/Led.2004.825198  0.339
2004 Kičin S, Pioda A, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Local backscattering in the quantum Hall regime Physical Review B. 70: 205302. DOI: 10.1103/Physrevb.70.205302  0.389
2004 Sih V, Lau WH, Myers RC, Gossard AC, Flatté ME, Awschalom DD. Control of electron-spin coherence using Landau level quantization in a two-dimensional electron gas Physical Review B - Condensed Matter and Materials Physics. 70: 1-4. DOI: 10.1103/Physrevb.70.161313  0.362
2004 Allen W, Gwinn EG, Kreutz TC, Gossard AC. Anomalous Hall effect in ferromagnetic semiconductors with hopping transport Physical Review B - Condensed Matter and Materials Physics. 70: 125320-1-125320-5. DOI: 10.1103/Physrevb.70.125320  0.323
2004 Myers RC, Gossard AC, Awschalom DD. Tunable spin polarization in III-V quantum wells with a ferromagnetic barrier Physical Review B - Condensed Matter and Materials Physics. 69: 161305-1-161305-4. DOI: 10.1103/Physrevb.69.161305  0.398
2004 Betz M, Trumm S, Sotier F, Leitenstorfer A, Schwanhäußer A, Eckardt M, Schmidt O, Malzer S, Döhler GH, Hanson M, Driscoll D, Gossard AC. Ultrafast high-field transport in GaAs: direct observation of quasi-ballistic electron motion, impact ionization and avalanche multiplication Semiconductor Science and Technology. 19: S167-S169. DOI: 10.1088/0268-1242/19/4/058  0.632
2004 Krauß J, Kotthaus JP, Wixforth A, Hanson M, Driscoll DC, Gossard AC, Schuh D, Bichler M. Capture and release of photonic images in a quantum well Applied Physics Letters. 85: 5830-5832. DOI: 10.1063/1.1830676  0.608
2004 Russell KJ, Appelbaum I, Yi W, Monsma DJ, Capasso F, Marcus CM, Narayanamurti V, Hanson MP, Gossard AC. Avalanche spin-valve transistor Applied Physics Letters. 85: 4502-4504. DOI: 10.1063/1.1818339  0.515
2004 Bjarnason JE, Chan TLJ, Lee AWM, Brown ER, Driscoll DC, Hanson M, Gossard AC, Muller RE. ErAs:GaAs photomixer with two-decade tunability and 12 μW peak output power Applied Physics Letters. 85: 3983-3985. DOI: 10.1063/1.1813635  0.61
2004 Sigrist M, Fuhrer A, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Multiple layer local oxidation for fabricating semiconductor nanostructures Applied Physics Letters. 85: 3558-3560. DOI: 10.1063/1.1809273  0.407
2004 Brown ER, Bjarnason J, Chan TLJ, Driscoll DC, Hanson M, Gossard AC. Room temperature, THz photomixing sweep oscillator and its application to spectroscopic transmission through organic materials Review of Scientific Instruments. 75: 5333-5342. DOI: 10.1063/1.1808912  0.325
2004 Vidan A, Westervelt RM, Stopa M, Hanson M, Gossard AC. Triple quantum dot charging rectifier Applied Physics Letters. 85: 3602-3604. DOI: 10.1063/1.1807030  0.671
2004 Hanson MP, Driscoll DC, Zimmerman JD, Gossard AC, Brown ER. Subplcosecond photocarrier lifetimes in GaSb/ErSb nanoparticle superlattices at 1.55 μm Applied Physics Letters. 85: 3110-3112. DOI: 10.1063/1.1805711  0.723
2004 Appelbaum I, Russell KJ, Shalish I, Narayanamurti V, Hanson MP, Gossard AC. Ballistic hole emission luminescence Applied Physics Letters. 85: 2265-2267. DOI: 10.1063/1.1793347  0.561
2004 Yi W, Appelbaum I, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Ballistic electron emission luminescence spectroscopy of an InAs quantum dot heterostructure Applied Physics Letters. 85: 1990-1992. DOI: 10.1063/1.1790595  0.638
2004 Schleser R, Ruh E, Ihn T, Ensslin K, Driscoll DC, Gossard AC. Time-resolved detection of individual electrons in a quantum dot Applied Physics Letters. 85: 2005-2007. DOI: 10.1063/1.1784875  0.429
2004 Schuller JA, Johnston-Halperin E, Gallinat CS, Knotz H, Gossard AC, Awschalom DD. Structural engineering of ferromagnetism in III-V digital ferromagnetic heterostructures Journal of Applied Physics. 95: 4922-4927. DOI: 10.1063/1.1667594  0.641
2004 Carter SG, Ciulin V, Sherwin MS, Hanson M, Huntington A, Coldren LA, Gossard AC. Terahertz electro-optic wavelength conversion in GaAs quantum wells: Improved efficiency and room-temperature operation Applied Physics Letters. 84: 840-842. DOI: 10.1063/1.1645662  0.408
2004 Appelbaum I, Russell KJ, Kozhevnikov M, Narayanamurti V, Hanson MP, Gossard AC. Room-temperature ballistic electron emission luminescence spectroscopy with a scanning tunneling microscope Applied Physics Letters. 84: 547-549. DOI: 10.1063/1.1644329  0.593
2004 Lin HK, Kadow C, Dahlström M, Bae JU, Rodwell MJW, Gossard AC, Brar B, Sullivan G, Nagy G, Bergman J. InAs/InAsP composite channels for antimonide-based field-effect transistors Applied Physics Letters. 84: 437-439. DOI: 10.1063/1.1642275  0.699
2004 Hanson MP, Driscoll DC, Kadow C, Gossard AC. Metal/semiconductor superlattices containing semimetallic ErSb nanoparticles in GaSb Applied Physics Letters. 84: 221-223. DOI: 10.1063/1.1639932  0.716
2004 Wei Y, Appelbaum I, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Ballistic electron emission luminescence of InAs quantum dots embedded in a GaAs/AlxGa1-xAs heterostructure Materials Research Society Symposium Proceedings. 838: 170-175. DOI: 10.1063/1.1584524  0.606
2004 Westervelt RM, Topinka MA, LeRoy BJ, Bleszynski AC, Aidala K, Shaw SEJ, Heller EJ, Maranowski KD, Gossard AC. Imaging electron waves Physica E: Low-Dimensional Systems and Nanostructures. 24: 63-69. DOI: 10.1016/J.Physe.2004.04.025  0.644
2004 Dorn A, Bieri E, Ihn T, Ensslin K, Driscoll D, Gossard AC. AFM-defined antidot lattices with top- and back-gate tunability Physica E-Low-Dimensional Systems & Nanostructures. 22: 749-752. DOI: 10.1016/J.Physe.2003.12.115  0.413
2004 Kyrychenko FV, Jho YD, Kono J, Crooker SA, Sanders GD, Reitze DH, Stanton CJ, Wei X, Kadow C, Gossard AC. Interband magnetoabsorption study of the shift of the Fermi energy of a 2DEG with an in-plane magnetic field Physica E: Low-Dimensional Systems and Nanostructures. 22: 624-627. DOI: 10.1016/J.Physe.2003.12.085  0.639
2004 Kičin S, Pioda A, Ihn T, Ensslin K, Driscoll DD, Gossard AC. Scanning gate measurements in the quantum Hall regime at 300 mK Physica E: Low-Dimensional Systems and Nanostructures. 21: 708-711. DOI: 10.1016/J.Physe.2003.11.103  0.438
2004 Dorn A, Peter M, Kicin S, Ihn T, Ensslin K, Driscoll D, Gossard AC. Charging effects of ErAs islands embedded in AlGaAs heterostructures Physica E-Low-Dimensional Systems & Nanostructures. 21: 426-429. DOI: 10.1016/J.Physe.2003.11.061  0.367
2004 Scott DW, Kadow C, Dong Y, Wei Y, Gossard AC, Rodwell MJW. Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy Journal of Crystal Growth. 267: 35-41. DOI: 10.1016/J.Jcrysgro.2004.03.049  0.649
2003 Brown ER, Bacher A, Driscoll D, Hanson M, Kadow C, Gossard AC. Evidence for a strong surface-plasmon resonance on ErAs nanoparticles in GaAs. Physical Review Letters. 90: 077403. PMID 12633271 DOI: 10.1103/Physrevlett.90.077403  0.736
2003 Miller JB, Zumbühl DM, Marcus CM, Lyanda-Geller YB, Goldhaber-Gordon D, Campman K, Gossard AC. Gate-controlled spin-orbit quantum interference effects in lateral transport. Physical Review Letters. 90: 076807. PMID 12633263 DOI: 10.1103/Physrevlett.90.076807  0.321
2003 Griebel M, Smet JH, Driscoll DC, Kuhl J, Diez CA, Freytag N, Kadow C, Gossard AC, Von Klitzing K. Tunable subpicosecond optoelectronic transduction in superlattices of self-assembled ErAs nanoislands. Nature Materials. 2: 122-6. PMID 12612698 DOI: 10.1038/Nmat819  0.656
2003 Kato Y, Myers RC, Driscoll DC, Gossard AC, Levy J, Awschalom DD. Gigahertz electron spin manipulation using voltage-controlled g-tensor modulation. Science (New York, N.Y.). 299: 1201-4. PMID 12543982 DOI: 10.1126/Science.1080880  0.352
2003 Kim Y, Dahlstrom M, Rodwell M, Gossard A. Thermal properties of metamorphic buffer materials for growth of inp double heterojunction bipolar transistors on gaas substrates Ieee Transactions On Electron Devices. 50: 1411-1413. DOI: 10.1109/Ted.2003.813225  0.325
2003 Johnston-Halperin E, Schuller JA, Gallinat CS, Kreutz TC, Myers RC, Kawakami RK, Knotz H, Gossard AC, Awschalom DD. Independent electronic and magnetic doping in (Ga,Mn)As based digital ferromagnetic heterostructures Physical Review B - Condensed Matter and Materials Physics. 68: 1653281-1653289. DOI: 10.1103/Physrevb.68.165328  0.697
2003 Druist DP, Gwinn EG, Maranowski KD, Gossard AC. Anisotropic magnetic response of a chiral conducting film Physical Review B - Condensed Matter and Materials Physics. 68: 753051-753054. DOI: 10.1103/Physrevb.68.075305  0.64
2003 Epstein RJ, Stephens J, Hanson M, Chye Y, Gossard AC, Petroff PM, Awschalom DD. Voltage control of nuclear spin in ferromagnetic Schottky diodes Physical Review B - Condensed Matter and Materials Physics. 68: 413051-413054. DOI: 10.1103/Physrevb.68.041305  0.602
2003 Jena D, Heikman S, Speck JS, Gossard A, Mishra UK, Link A, Ambacher O. Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN Physical Review B - Condensed Matter and Materials Physics. 67: 1533061-1533064. DOI: 10.1103/Physrevb.67.153306  0.378
2003 Appelbaum I, Russell KJ, Monsma DJ, Narayanamurti V, Marcus CM, Hanson MP, Gossard AC. Luminescent spin-valve transistor Applied Physics Letters. 83: 4571-4573. DOI: 10.1063/1.1630838  0.525
2003 Pohl P, Renner FH, Eckardt M, Schwanhäußer A, Friedrich A, Yüksekdag Ö, Malzer S, Döhler GH, Kiesel P, Driscoll D, Hanson M, Gossard AC. Enhanced recombination tunneling in GaAs pn junctions containing low-temperature-grown-GaAs and ErAs layers Applied Physics Letters. 83: 4035-4037. DOI: 10.1063/1.1625108  0.617
2003 Sukhotin M, Brown ER, Driscoll D, Hanson M, Gossard AC. Picosecond photocarrier-lifetime in ErAs:InGaAs at 1.55 μm Applied Physics Letters. 83: 3921-3923. DOI: 10.1063/1.1622121  0.582
2003 Harris JGE, Knobel R, Maranowski KD, Gossard AC, Samarth N, Awschaloma DD. Damping of micromechanical structures by paramagnetic relaxation Applied Physics Letters. 82: 3532-3534. DOI: 10.1063/1.1577385  0.576
2003 Griebel M, Smet JH, Kuhl J, Von Klitzing K, Driscoll DC, Kadow C, Gossard AC. Picosecond sampling with fiber-illuminated ErAs:GaAs photoconductive switches in a strong magnetic field and a cryogenic environment Applied Physics Letters. 82: 3179-3181. DOI: 10.1063/1.1573367  0.61
2003 Russella KJ, Appelbaum I, Temkin H, Perry CH, Narayanamurti V, Hanson MP, Gossard AC. Room-temperature electro-optic up-conversion via internal photoemission Applied Physics Letters. 82: 2960-2962. DOI: 10.1063/1.1571981  0.55
2003 Sukhotin M, Brown ER, Gossard AC, Driscoll D, Hanson M, Maker P, Muller R. Photomixing and photoconductor measurements on ErAs/InGaAs at 1.55 μm Applied Physics Letters. 82: 3116-3118. DOI: 10.1063/1.1567459  0.614
2003 Dorn A, Peter M, Kicin S, Ihn T, Ensslin K, Driscoll D, Gossard AC. Charge tunable ErAs islands for backgate isolation in AlGaAs heterostructures Applied Physics Letters. 82: 2631-2633. DOI: 10.1063/1.1566793  0.363
2003 Ku KC, Potashnik SJ, Wang RF, Chun SH, Schiffer P, Samarth N, Seong MJ, Mascarenhas A, Johnston-Halperin E, Myers RC, Gossard AC, Awschalom DD. Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers Applied Physics Letters. 82: 2302-2304. DOI: 10.1063/1.1564285  0.301
2003 Eckardt M, Schwanhäußer A, Renner F, Robledo L, Friedrich A, Pohl P, Kiesel P, Malzer S, Döhler G, Driscoll D, Hanson M, Gossard A. Novel concept for efficient THz-emitters based on quasi-ballistic transport in an asymmetric superlattice Physica E: Low-Dimensional Systems and Nanostructures. 17: 629-630. DOI: 10.1016/S1386-9477(02)00912-8  0.602
2003 Chan IH, Fallahi P, Westervelt RM, Maranowski KD, Gossard AC. Capacitively coupled quantum dots as a single-electron switch Physica E: Low-Dimensional Systems and Nanostructures. 17: 584-588. DOI: 10.1016/S1386-9477(02)00876-7  0.686
2003 Salis G, Kato Y, Ensslin K, Driscoll DC, Gossard AC, Awschalom DD. Electrical control of spin precession in semiconductor quantum wells Physica E: Low-Dimensional Systems and Nanostructures. 16: 99-103. DOI: 10.1016/S1386-9477(02)00595-7  0.396
2003 LeRoy BJ, Bleszynski AC, Topinka MA, Westervelt RM, Shaw SEJ, Heller EJ, Maranowski KD, Gossard AC. Imaging coherent electron wave flow in a two-dimensional electron gas Physica E: Low-Dimensional Systems and Nanostructures. 18: 163-164. DOI: 10.1016/S1386-9477(01)00375-7  0.631
2003 Westervelt RM, Topinka MA, LeRoy BJ, Bleszynski AC, Shaw SEJ, Heller EJ, Maranowski KD, Gossard AC. Imaging coherent electron flow in a two-dimensional electron gas Physica E: Low-Dimensional Systems and Nanostructures. 18: 138-140. DOI: 10.1016/S0169-4332(02)01493-9  0.639
2003 Dong Y, Scott DW, Wei Y, Gossard AC, Rodwell MJ. Low-resistance p-type polycrystalline GaSb grown by molecular beam epitaxy Journal of Crystal Growth. 256: 223-229. DOI: 10.1016/S0022-0248(03)01346-0  0.312
2003 Driscoll DC, Hanson MP, Mueller E, Gossard AC. Growth and microstructure of semimetallic ErAs particles embedded in an In0.53Ga0.47As matrix Journal of Crystal Growth. 251: 243-247. DOI: 10.1016/S0022-0248(02)02511-3  0.585
2003 Kadow C, Lin HK, Dahlström M, Rodwell M, Gossard AC, Brar B, Sullivan G. Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wells Journal of Crystal Growth. 251: 543-546. DOI: 10.1016/S0022-0248(02)02447-8  0.7
2002 Zumbühl DM, Miller JB, Marcus CM, Campman K, Gossard AC. Spin-orbit coupling, antilocalization, and parallel magnetic fields in quantum dots. Physical Review Letters. 89: 276803. PMID 12513231 DOI: 10.1103/Physrevlett.89.276803  0.379
2002 Butov LV, Gossard AC, Chemla DS. Macroscopically ordered state in an exciton system Nature. 418: 751-754. PMID 12181559 DOI: 10.1038/Nature00943  0.434
2002 Deviatov EV, Shashkin AA, Dolgopolov VT, Kutschera HJ, Wixforth A, Campman KL, Gossard AC. Shifting the quantum Hall plateau level in a double layer electron system Jetp Letters. 75: 34-36. DOI: 10.1134/1.1463112  0.419
2002 Griebel M, Smet JH, Kuhl J, Driscoll D, Kadow C, Von Klitzing K, Gossard AC. Diffusion-controlled picosecond carrier dynamics in ErAs:GaAs superlattices Proceedings of Spie - the International Society For Optical Engineering. 4643: 56-61. DOI: 10.1117/12.470436  0.639
2002 Kim YM, Dahlstrom M, Lee S, Rodwell AJW, Gossard AC. High-performance InP/In/sub 0.53/Ga/sub 0.47/As/InP double HBTs on GaAs substrates Ieee Electron Device Letters. 23: 297-299. DOI: 10.1109/Led.2002.1004214  0.306
2002 Lindemann S, Ihn T, Heinzel T, Zwerger W, Ensslin K, Maranowski K, Gossard AC. Stability of spin states in quantum dots Physical Review B. 66. DOI: 10.1103/Physrevb.66.195314  0.627
2002 Lindemann S, Bänninger M, Ihn T, Heinzel T, Ulloa SE, Ensslin K, Maranowski K, Gossard AC. Lateral superlattices on parabolic quantum wells Physical Review B. 66. DOI: 10.1103/Physrevb.66.165317  0.667
2002 Lindemann S, Ihn T, Bieri S, Heinzel T, Ensslin K, Hackenbroich G, Maranowski K, Gossard AC. Bouncing states in quantum dots Physical Review B. 66. DOI: 10.1103/Physrevb.66.161312  0.648
2002 Shtrichman I, Ron A, Gershoni D, Ehrenfreund E, Maranowski KD, Gossard AC. Temporal evolution of the excitonic distribution function inGaAs/Al0.33Ga0.67Assuperlattices Physical Review B. 65. DOI: 10.1103/Physrevb.65.153302  0.625
2002 LeRoy BJ, Topinka MA, Westervelt RM, Maranowski KD, Gossard AC. Imaging electron density in a two-dimensional electron gas Applied Physics Letters. 80: 4431-4433. DOI: 10.1063/1.1484548  0.634
2002 Chan IH, Westervelt RM, Maranowski KD, Gossard AC. Strongly capacitively coupled quantum dots Applied Physics Letters. 80: 1818-1820. DOI: 10.1063/1.1456552  0.682
2002 Lindemann S, Ihn T, Heinzel T, Ensslin K, Maranowski K, Gossard AC. From two-dimensional to three-dimensional quantum dots Physica E: Low-Dimensional Systems and Nanostructures. 13: 638-641. DOI: 10.1016/S1386-9477(02)00206-0  0.659
2002 Hanson MP, Driscoll DC, Muller E, Gossard AC. Microstructure and electronic characterization of InGaAs containing layers of self-assembled ErAs nanoparticles Physica E: Low-Dimensional Systems and Nanostructures. 13: 602-605. DOI: 10.1016/S1386-9477(02)00194-7  0.603
2002 Druist DP, Gwinn EG, Maranowski KD, Gossard AC. Tilted field effects in quantum Hall multilayers Physica E: Low-Dimensional Systems and Nanostructures. 12: 129-131. DOI: 10.1016/S1386-9477(01)00284-3  0.651
2002 Kawakami RK, Johnston-Halperin E, Chen LF, Hanson M, Guébels N, Stephens JM, Speck JS, Gossard AC, Awschalom DD. Growth and magnetic properties of (Ga,Mn) As as digital ferromagnetic heterostructures Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 88: 209-212. DOI: 10.1016/S0921-5107(01)00906-0  0.606
2002 Kim YM, Rodwell MJW, Gossard AC. Thermal characteristics of InP, InAlAs, and AlGaAsSb metamorphic buffer layers used in In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As heterojunction bipolar transistors grown on GaAs substrates Journal of Electronic Materials. 31: 196-199. DOI: 10.1007/S11664-002-0206-4  0.325
2001 Salis G, Kato Y, Ensslin K, Driscoll DC, Gossard AC, Awschalom DD. Electrical control of spin coherence in semiconductor nanostructures. Nature. 414: 619-22. PMID 11740554 DOI: 10.1038/414619A  0.377
2001 Williams JB, Sherwin MS, Maranowski KD, Gossard AC. Dissipation of intersubband plasmons in wide quantum wells. Physical Review Letters. 87: 037401. PMID 11461588 DOI: 10.1103/PhysRevLett.87.037401  0.617
2001 Kycia JB, Chen J, Therrien R, Kurdak C, Campman KL, Gossard AC, Clarke J. Effects of dissipation on a superconducting single electron transistor. Physical Review Letters. 87: 017002. PMID 11461486 DOI: 10.1103/Physrevlett.87.017002  0.38
2001 Butov LV, Ivanov AL, Imamoglu A, Littlewood PB, Shashkin AA, Dolgopolov VT, Campman KL, Gossard AC. Stimulated scattering of indirect excitons in coupled quantum wells: signature of a degenerate Bose-gas of excitons. Physical Review Letters. 86: 5608-11. PMID 11415313 DOI: 10.1103/Physrevlett.86.5608  0.401
2001 Harris JG, Knobel R, Maranowski KD, Gossard AC, Samarth N, Awschalom DD. Magnetization measurements of magnetic two-dimensional electron gases. Physical Review Letters. 86: 4644-7. PMID 11384304 DOI: 10.1103/Physrevlett.86.4644  0.611
2001 Topinka MA, LeRoy BJ, Westervelt RM, Shaw SE, Fleischmann R, Heller EJ, Maranowski KD, Gossard AC. Coherent branched flow in a two-dimensional electron gas. Nature. 410: 183-6. PMID 11242072 DOI: 10.1038/35065553  0.627
2001 Butov LV, Imamoglu A, Campman KL, Gossard AC. Coulomb Effects in Spatially Separated Electron and Hole Layers in Coupled Quantum Wells Journal of Experimental and Theoretical Physics. 92: 260-266. DOI: 10.1134/1.1354683  0.418
2001 Driscoll DC, Hanson M, Kadow C, Gossard AC. Transition to insulating behavior in the metal-semiconductor digital composite ErAs:InGaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1631-1634. DOI: 10.1116/1.1388211  0.731
2001 Shtrichman I, Metzner C, Ehrenfreund E, Gershoni D, Maranowski KD, Gossard AC. Depolarization shift of the intersubband resonance in a quantum well with an electron-hole plasma Physical Review B. 65. DOI: 10.1103/Physrevb.65.035310  0.649
2001 Woodside MT, Vale C, McEuen PL, Kadow C, Maranowski KD, Gossard AC. Imaging interedge-state scattering centers in the quantum Hall regime Physical Review B - Condensed Matter and Materials Physics. 64: 413101-413104. DOI: 10.1103/Physrevb.64.041310  0.785
2001 Duncan DS, Topinka MA, Westervelt RM, Maranowski KD, Gossard AC. Aharonov-Bohm phase shift in an open electron resonator Physical Review B - Condensed Matter and Materials Physics. 64: 0333101-0333104. DOI: 10.1103/Physrevb.64.033310  0.639
2001 Duncan DS, Topinka MA, Westervelt RM, Maranowski KD, Gossard AC. Interaction of tunnel-coupled quantum dots in a magnetic field Physical Review B - Condensed Matter and Materials Physics. 63: 453111-453114. DOI: 10.1103/Physrevb.63.045311  0.658
2001 Chen LH, Topinka MA, LeRoy BJ, Westervelt RM, Maranowski KD, Gossard AC. Charge-imaging field-effect transistor Applied Physics Letters. 79: 1202-1204. DOI: 10.1063/1.1395516  0.64
2001 Driscoll DC, Hanson M, Kadow C, Gossard AC. Electronic structure and conduction in a metal-semiconductor digital composite: ErAs:InGaAs Applied Physics Letters. 78: 1703-1705. DOI: 10.1063/1.1355988  0.75
2001 Jena D, Smorchkova I, Gossard A, Mishra U. Electron Transport in III-V Nitride Two-Dimensional Electron Gases Physica Status Solidi (B). 228: 617-619. DOI: 10.1002/1521-3951(200111)228:2<617::Aid-Pssb617>3.0.Co;2-E  0.327
2000 Topinka MA, LeRoy BJ, Shaw SE, Heller EJ, Westervelt RM, Maranowski KD, Gossard AC. Imaging coherent electron flow from a quantum point contact Science (New York, N.Y.). 289: 2323-6. PMID 11009412 DOI: 10.1126/Science.289.5488.2323  0.624
2000 Deviatov EV, Khrapai VS, Shashkin AA, Dolgopolov VT, Hastreiter F, Wixforth A, Campman KL, Gossard AC. Opening an energy gap in an electron double layer system at the integer filling factor in a tilted magnetic field Jetp Letters. 71: 496-499. DOI: 10.1134/1.1307474  0.362
2000 Kadow C, Johnson JA, Kolstad K, Ibbetson JP, Gossard AC. Growth and microstructure of self-assembled ErAs islands in GaAs Journal of Vacuum Science & Technology B. 18: 2197-2203. DOI: 10.1116/1.1306299  0.334
2000 Butov LV, Mintsev AV, Lozovik YE, Campman KL, Gossard AC. From spatially indirect excitons to momentum-space indirect excitons by an in-plane magnetic field Physical Review B. 62: 1548-1551. DOI: 10.1103/Physrevb.62.1548  0.352
2000 Harris JGE, Awschalom DD, Maranowski KD, Gossard AC. Magnetization and dissipation measurements in the quantum Hall regime using an integrated micromechanical magnetometer Journal of Applied Physics. 87: 5102-5104. DOI: 10.1063/1.373262  0.642
2000 Kawakami RK, Johnston-Halperin E, Chen LF, Hanson M, Guébels N, Speck JS, Gossard AC, Awschalom DD. Erratum: “(Ga,Mn)As as a digital ferromagnetic heterostructure” [Appl. Phys. Lett. 77, 2379 (2000)] Applied Physics Letters. 77: 3665-3665. DOI: 10.1063/1.1331685  0.548
2000 Lu W, Rimberg AJ, Maranowski KD, Gossard AC. Single-electron transistor strongly coupled to an electrostatically defined quantum dot Applied Physics Letters. 77: 2746-2748. DOI: 10.1063/1.1320455  0.458
2000 Duncan DS, Goldhaber-Gordon D, Westervelt RM, Maranowski KD, Gossard AC. Coulomb-blockade spectroscopy on a small quantum dot in a parallel magnetic field Applied Physics Letters. 77: 2183-2185. DOI: 10.1063/1.1313812  0.662
2000 Jena D, Gossard AC, Mishra UK. Dipole scattering in polarization induced III–V nitride two-dimensional electron gases Journal of Applied Physics. 88: 4734. DOI: 10.1063/1.1311832  0.349
2000 Kadow C, Jackson AW, Gossard AC, Matsuura S, Blake GA. Self-assembled ErAs islands in GaAs for optical-heterodyne THz generation Applied Physics Letters. 76: 3510-3512. DOI: 10.1063/1.126690  0.653
2000 Shtrichman I, Mizrahi U, Gershoni D, Ehrenfreund E, Maranowski KD, Gossard AC. Dynamics of carriers in resonantly excited quantum-well lasers studied by intersubband absorption Applied Physics Letters. 76: 2988-2990. DOI: 10.1063/1.126554  0.4
2000 Williams JB, Sherwin MS, Maranowski KD, Kadow C, Gossard AC. Linewidth and dephasing of THz-frequency collective intersubband transitions in a GaAs/AlGaAs quantum well Physica E: Low-Dimensional Systems and Nanostructures. 7: 204-207. DOI: 10.1016/S1386-9477(99)00320-3  0.782
2000 Kadow C, Jackson AW, Gossard AC, Bowers JE, Matsuura S, Blake GA. Self-assembled ErAs islands in GaAs for THz applications Physica E: Low-Dimensional Systems and Nanostructures. 7: 97-100. DOI: 10.1016/S1386-9477(99)00314-8  0.612
2000 Shtrichman I, Mizrahi U, Gershoni D, Ehrenfreund E, Maranowski KD, Gossard AC. Time-resolved intersubband optical transitions in resonantly optically pumped semiconductor lasers Physica E: Low-Dimensional Systems and Nanostructures. 7: 237-240. DOI: 10.1016/S1386-9477(99)00299-4  0.659
2000 Kurdak C, Therrien R, Kycia JB, Clarke J, Campman KL, Gossard AC. Observation of large conductance oscillations in a superconducting single-electron transistor coupled to a two-dimensional electron gas Physica E: Low-Dimensional Systems and Nanostructures. 6: 852-855. DOI: 10.1016/S1386-9477(99)00232-5  0.409
2000 Butov LV, Imamoglu A, Shashkin AA, Dolgopolov VT, Mintsev AV, Feklisov SG, Campman KL, Gossard AC. Magneto optics of the spatially separated electron and hole layers in GaAs/AlGaAs coupled quantum wells Physica E: Low-Dimensional Systems and Nanostructures. 6: 655-659. DOI: 10.1016/S1386-9477(99)00145-9  0.445
2000 Streibl M, Wixforth A, Kotthaus JP, Kadow C, Gossard AC. Imaging of carrier dynamics in semiconductor heterostructures by surface acoustic waves Physica E: Low-Dimensional Systems and Nanostructures. 6: 255-259. DOI: 10.1016/S1386-9477(99)00137-X  0.657
2000 Druist DP, Gwinn EG, Maranowski KD, Gossard AC. Magnetoresistance of chiral surface states in the integer quantum Hall effect Physica E: Low-Dimensional Systems and Nanostructures. 6: 619-622. DOI: 10.1016/S1386-9477(99)00130-7  0.643
2000 Woodside MT, Vale C, McCormick KL, McEuen PL, Kadow C, Maranowski KD, Gossard AC. Scanned potential microscopy of edge states in a quantum Hall liquid Physica E: Low-Dimensional Systems and Nanostructures. 6: 238-241. DOI: 10.1016/S1386-9477(99)00115-0  0.766
2000 Fromer N, Schüller C, Chemla DS, Maranowski K, Gossard AC. Dephasing in the presence of a two-dimensional electron gas at high magnetic fields Physica E: Low-Dimensional Systems and Nanostructures. 6: 210-213. DOI: 10.1016/S1386-9477(99)00083-1  0.656
2000 Denk P, Hartung M, Wixforth A, Campmann KL, Gossard AC. Depolarization shift in coupled quantum wells with tunable level spectrum Physica E-Low-Dimensional Systems & Nanostructures. 8: 269-274. DOI: 10.1016/S1386-9477(00)00151-X  0.411
2000 Unterrainer K, Kersting R, Bratschitsch R, Strasser G, Heyman JN, Maranowski KD, Gossard AC. Few-cycle THz spectroscopy of nanostructures Physica E: Low-Dimensional Systems and Nanostructures. 7: 693-697. DOI: 10.1016/S1386-9477(00)00039-4  0.677
2000 Hu J, Deng T, Beck RG, Westervelt RM, Maranowski KD, Gossard AC, Whitesides GM. Fabrication of GaAs/AlGaAs high electron mobility transistors with 250 nm gates using conformal phase shift lithography Sensors and Actuators, a: Physical. 86: 122-126. DOI: 10.1016/S0924-4247(00)00435-0  0.621
2000 Butov LV, Imamoglu A, Shashkin AA, Dolgopolov VT, Mintsev AV, Feklisov SG, Campman KL, Gossard AC. Nonlinear photoluminescence kinetics of indirect excitons in coupled quantum wells Physica Status Solidi (a) Applied Research. 178: 83-87. DOI: 10.1002/1521-396X(200003)178:1<83::Aid-Pssa83>3.0.Co;2-8  0.367
1999 Butov LV, Shashkin AA, Dolgopolov VT, Campman KL, Gossard AC. Magneto-optics of the spatially separated electron and hole layers inGaAs/AlxGa1−xAscoupled quantum wells Physical Review B. 60: 8753-8758. DOI: 10.1103/Physrevb.60.8753  0.419
1999 Salis G, Heinzel T, Ensslin K, Homan OJ, Bächtold W, Maranowski K, Gossard AC. Mode spectroscopy and level coupling in ballistic electron waveguides Physical Review B. 60: 7756-7759. DOI: 10.1103/Physrevb.60.7756  0.623
1999 Salis G, Wirth P, Heinzel T, Ihn T, Ensslin K, Maranowski K, Gossard AC. Variation of elastic scattering across a quantum well Physical Review B. 59. DOI: 10.1103/Physrevb.59.R5304  0.626
1999 Butov LV, Imamoglu A, Mintsev AV, Campman KL, Gossard AC. Photoluminescence kinetics of indirect excitons inGaAs/AlxGa1−xAscoupled quantum wells Physical Review B. 59: 1625-1628. DOI: 10.1103/Physrevb.59.1625  0.429
1999 Dolgopolov VT, Shashkin AA, Deviatov EV, Hastreiter F, Hartung M, Wixforth A, Campman KL, Gossard AC. Electron subbands in a double quantum well in a quantizing magnetic field Physical Review B. 59: 13235-13241. DOI: 10.1103/Physrevb.59.13235  0.436
1999 Livermore C, Duncan DS, Westervelt RM, Maranowski KD, Gossard AC. Conductance oscillations in tunnel-coupled quantum dots in the quantum Hall regime Physical Review B - Condensed Matter and Materials Physics. 59: 10744-10747. DOI: 10.1103/Physrevb.59.10744  0.674
1999 Studenikin SA, Chaplik AV, Panaev IA, Salis G, Ensslin K, Maranowski K, Gossard AC. Classical magnetotransport in a parabolic quantum well with a strong intersubband scattering Semiconductor Science and Technology. 14: 604-610. DOI: 10.1088/0268-1242/14/7/303  0.613
1999 Livermore C, Duncan DS, Westervelt RM, Maranowski KD, Gossard AC. Measuring interactions between tunnel-coupled quantum dots in the quantum Hall regime Journal of Applied Physics. 86: 4043-4045. DOI: 10.1063/1.371326  0.68
1999 Streibl M, Wixforth A, Kotthaus JP, Govorov AO, Kadow C, Gossard AC. Imaging of acoustic charge transport in semiconductor heterostructures by surface acoustic waves Applied Physics Letters. 75: 4139-4141. DOI: 10.1063/1.125562  0.649
1999 Kadow C, Fleischer SB, Ibbetson JP, Bowers JE, Gossard AC, Dong JW, Palmstrøm CJ. Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics Applied Physics Letters. 75: 3548-3550. DOI: 10.1063/1.125384  0.332
1999 Kadow C, Fleischer SB, Ibbetson JP, Bowers JE, Gossard AC. Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates Applied Physics Letters. 75: 2575-2577. DOI: 10.1063/1.125082  0.643
1999 Harris JGE, Awschalom DD, Matsukura F, Ohno H, Maranowski KD, Gossard AC. Integrated micromechanical cantilever magnetometry of Ga1−xMnxAs Applied Physics Letters. 75: 1140-1142. DOI: 10.1063/1.124622  0.611
1999 Adourian AS, Livermore C, Westervelt RM, Campman KL, Gossard AC. Evolution of Coulomb blockade spectra in parallel coupled quantum dots Applied Physics Letters. 75: 424-426. DOI: 10.1063/1.124396  0.45
1999 Ulrich J, Zobl R, Unterrainer K, Strasser G, Gornik E, Maranowski KD, Gossard AC. Temperature dependence of far-infrared electroluminescence in parabolic quantum wells Applied Physics Letters. 74: 3158-3160. DOI: 10.1063/1.124091  0.356
1999 Jackson AW, Ibbetson JP, Gossard AC, Mishra UK. Reduced Thermal Conductivity In Low-Temperature-Grown Gaas Applied Physics Letters. 74: 2325-2327. DOI: 10.1063/1.123839  0.315
1999 Heremans JJ, von Molnár S, Awschalom DD, Gossard AC. Ballistic electron focusing by elliptic reflecting barriers Applied Physics Letters. 74: 1281-1283. DOI: 10.1063/1.123524  0.359
1999 Duncan DS, Livermore C, Westervelt RM, Maranowski KD, Gossard AC. Direct measurement of the destruction of charge quantization in a single-electron box Applied Physics Letters. 74: 1045-1047. DOI: 10.1063/1.123450  0.65
1999 Campman KL, Maranowski KD, Schmidt H, Imamoglu A, Gossard AC. Quantum interference of intersubband transitions in coupled quantum wells Physica E: Low-Dimensional Systems and Nanostructures. 5: 16-26. DOI: 10.1016/S1386-9477(99)00035-1  0.642
1999 Salis G, Heinzel T, Ensslin K, Homan O, Bächtold W, Maranowski K, Gossard A. Spectroscopy of coupled one-dimensional subbands Microelectronic Engineering. 47: 175-177. DOI: 10.1016/S0167-9317(99)00183-5  0.672
1999 Druist DP, Yoo KH, Turley PJ, Gwinn EG, Maranowski K, Gossard AC. Conductance fluctuations of chiral metals Superlattices and Microstructures. 25: 181-184. DOI: 10.1006/Spmi.1998.0634  0.651
1998 Zielinski L, Chaltikian K, Birnbaum K, Marcus CM, Campman K, Gossard AC. Classical advection of guiding centers in a random magnetic field Europhysics Letters (Epl). 42: 73-78. DOI: 10.1209/Epl/I1998-00554-7  0.319
1998 Dolgopolov VT, Tsydynzhapov GE, Shashkin AA, Deviatov EV, Hastreiter F, Hartung M, Wixforth A, Campman KL, Gossard AC. Magnetic-field-induced hybridization of electron subbands in a coupled double quantum well Jetp Letters. 67: 595-601. DOI: 10.1134/1.567732  0.444
1998 Shakouri A, Liu B, Kim BG, Abraham P, Jackson AW, Gossard AC, Bowers JE. Wafer-fused optoelectronics for switching Journal of Lightwave Technology. 16: 2236-2242. DOI: 10.1109/50.736590  0.31
1998 Patel SR, Cronenwett SM, Stewart DR, Huibers AG, Marcus CM, Duruöz CI, Harris JS, Campman K, Gossard AC. Statistics of Coulomb Blockade Peak Spacings Physical Review Letters. 80: 4522-4525. DOI: 10.1103/Physrevlett.80.4522  0.451
1998 Druist DP, Turley PJ, Maranowski KD, Gwinn EG, Gossard AC. Observation of chiral surface states in the integer quantum hall effect Physical Review Letters. 80: 365-368. DOI: 10.1103/Physrevlett.80.365  0.666
1998 Okamura H, Heiman D, Sundaram M, Gossard AC. Inhibited recombination of charged magnetoexcitons Physical Review B - Condensed Matter and Materials Physics. 58. DOI: 10.1103/Physrevb.58.R15985  0.41
1998 Vieira GS, Allen SJ, Guimaraes PSS, Campman KL, Gossard AC. Resonantly enhanced photon-assisted tunneling in a multiple-quantum-well superlattice Physical Review B. 58: 7136-7140. DOI: 10.1103/Physrevb.58.7136  0.389
1998 Holtz PO, Ferreira AC, Sernelius BE, Buyanov A, Monemar B, Mauritz O, Ekenberg U, Sundaram M, Campman K, Merz JL, Gossard AC. Many-body effects in highly acceptor-doped GaAs/Al x Ga 1-x As quantum wells Physical Review B. 58: 4624-4628. DOI: 10.1103/Physrevb.58.4624  0.347
1998 Salis G, Ruhstaller B, Ensslin K, Campman K, Maranowski K, Gossard AC. Subband densities in quantum wells under in-plane magnetic fields Physical Review B. 58: 1436-1441. DOI: 10.1103/Physrevb.58.1436  0.627
1998 Denk P, Hartung M, Streibl M, Wixforth A, Campman KL, Gossard AC. Magnetic-Field-Induced Charge Localization In A High-Mobility Semiconductor Superlattice Physical Review B. 57: 13094-13098. DOI: 10.1103/Physrevb.57.13094  0.313
1998 Beck RG, Eriksson MA, Westervelt RM, Maranowski KD, Gossard AC. Measuring the mechanical resonance of a GaAs/AlGaAs cantilever using a strain-sensing field-effect transistor Semiconductor Science and Technology. 13: A83-A85. DOI: 10.1088/0268-1242/13/8A/025  0.618
1998 Beck RG, Eriksson MA, Westervelt RM, Maranowski KD, Gossard AC. Measuring the mechanical resonance of a GaAs/AlGaAs cantilever using a strain-sensing field-effect transistor Semiconductor Science and Technology. 13: A83-A85. DOI: 10.1088/0268-1242/13/8A/025  0.563
1998 Adourian AS, Yang S, Westervelt RM, Campman KL, Gossard AC. Josephson junction oscillators as probes of electronic nanostructures Journal of Applied Physics. 84: 5808-5810. DOI: 10.1063/1.368847  0.452
1998 Beck RG, Eriksson MA, Topinka MA, Westervelt RM, Maranowski KD, Gossard AC. GaAs/AlGaAs self-sensing cantilevers for low temperature scanning probe microscopy Applied Physics Letters. 73: 1149-1151. DOI: 10.1063/1.122112  0.582
1998 Luyken RJ, Lorke A, Song AM, Streibl M, Kotthaus JP, Kadow C, English JH, Gossard AC. Highly anharmonic potential modulation in lateral superlattices fabricated using epitaxial InGaAs stressors Applied Physics Letters. 73: 1110-1112. DOI: 10.1063/1.122100  0.641
1998 Switkes M, Huibers AG, Marcus CM, Campman K, Gossard AC. High bias transport and magnetometer design in open quantum dots Applied Physics Letters. 72: 471-473. DOI: 10.1063/1.120789  0.437
1998 Mirin RP, Gossard AC, Bowers JE. Characterization of InGaAs quantum dot lasers with a single quantum dot layer as an active region Physica E: Low-Dimensional Systems and Nanostructures. 2: 738-742. DOI: 10.1016/S1386-9477(98)00151-9  0.4
1998 Cates CL, Briceño G, Sherwin MS, Maranowski KD, Campman K, Gossard AC. A concept for a tunable antenna-coupled intersubband terahertz (TACIT) detector Physica E: Low-Dimensional Systems and Nanostructures. 2: 463-467. DOI: 10.1016/S1386-9477(98)00095-2  0.613
1998 Heyman JN, Barnhorst J, Unterrainer K, Williams J, Sherwin MS, Campman K, Gossard AC. Intersubband scattering of cold electrons in a coupled quantum well with subband spacing below ℏωLO Physica E: Low-Dimensional Systems and Nanostructures. 2: 195-199. DOI: 10.1016/S1386-9477(98)00042-3  0.393
1998 Williams JB, Craig K, Sherwin MS, Campman K, Gossard AC. Measurements of far-infrared intersubband absorption linewidths in GaAs/AlGaAs quantum wells as a function of temperature and charge density Physica E: Low-Dimensional Systems and Nanostructures. 2: 177-180. DOI: 10.1016/S1386-9477(98)00038-1  0.411
1998 Geißelbrecht W, Sahr U, Masten A, Gräbner O, Klütz U, Forkel M, Döhler G, Campman K, Gossard A. Electro-optical probing of envelope wavefunctions in GaAs/AlGaAs parabolic quantum well structures Physica E: Low-Dimensional Systems and Nanostructures. 2: 106-110. DOI: 10.1016/S1386-9477(98)00024-1  0.432
1998 Shtrichman I, Oiknine-Schlesinger J, Gershoni D, Ehrenfreund E, Maranowski KD, Gossard AC. Momentum redistribution times of 2D excitons measured by transient resonantly induced intersubband absorption Physica E-Low-Dimensional Systems & Nanostructures. 2: 65-69. DOI: 10.1016/S1386-9477(98)00015-0  0.339
1998 Vieira GS, Guimarães PSS, Alves ES, Allen SJ, Campman KL, Gossard AC. Resonant magnetic field induced enhancement of the tunneling current in multi-quantum wells Physica B-Condensed Matter. 256: 527-530. DOI: 10.1016/S0921-4526(98)00541-9  0.378
1998 Heinzel T, Salis G, Wirth P, Ensslin K, Maranowski K, Gossard AC. Investigation of the spatial variation of scattering centers in parabolic quantum wells Physica B-Condensed Matter. 256: 252-255. DOI: 10.1016/S0921-4526(98)00522-5  0.653
1998 Ihn T, Huberty M, Salis G, Ensslin K, Maranowski K, Gossard AC. Universal conductance fluctuations in a parabolic quantum well tunable from two- to three-dimensional behavior Physica B-Condensed Matter. 256: 401-404. DOI: 10.1016/S0921-4526(98)00501-8  0.373
1998 Okamura H, Heiman D, Sundaram M, Gossard AC. Inhibited recombination of negatively-charged excitons in GaAs quantum wells at high magnetic fields Physica B: Condensed Matter. 256: 470-473. DOI: 10.1016/S0921-4526(98)00489-X  0.363
1998 Salis G, Heinzel T, Ensslin K, Homan O, Bächtold W, Maranowski K, Gossard AC. Coupled one-dimensional subbands in in-plane magnetic fields Physica B-Condensed Matter. 256: 384-387. DOI: 10.1016/S0921-4526(98)00487-6  0.656
1998 Salis G, Ensslin K, Campman KB, Maranowski K, Gossard AC. Wave-function spectroscopy in parabolic quantum wells Physica B-Condensed Matter. 249: 941-945. DOI: 10.1016/S0921-4526(98)00350-0  0.648
1998 Lundström T, Holtz PO, Bergman JP, Buyanov A, Monemar B, Campman K, Merz JL, Gossard AC. Dynamical studies of the radiative recombination process in a modulation doped GaAs/AlGaAs heterostructure Physica B-Condensed Matter. 249: 767-770. DOI: 10.1016/S0921-4526(98)00310-X  0.382
1998 Turley PJ, Druist DP, Gwinn EG, Maranowski K, Campmann K, Gossard AC. Tunneling through point contacts in the quantum Hall effect Physica B: Condensed Matter. 249: 410-414. DOI: 10.1016/S0921-4526(98)00146-X  0.647
1998 Marcus CM, Patel SR, Duruöz CI, Harris JS, Campman K, Gossard AC. Statistics of peak spacings and widths in the quantum coulomb blockade regime Physica B-Condensed Matter. 249: 201-205. DOI: 10.1016/S0921-4526(98)00098-2  0.48
1998 Druist DP, Turley PJ, Gwinn EG, Maranowski K, Gossard AC. 2D transport at the surface of a 3D quantum Hall system Physica B: Condensed Matter. 249: 70-74. DOI: 10.1016/S0921-4526(98)00069-6  0.649
1998 Dzurak AS, Kane BE, Clark RG, Lumpkin NE, Brien JO, Facer GR, Starrett RP, Skougarevsky A, Nakagawa H, Miura N, Rickel DG, Goettee JD, Campbell LJ, Fowler CM, Mielke C, ... ... Gossard AC, et al. Low-temperature transport measurements of superconductors and semiconductors in magnetic fields to 800 T Physica B-Condensed Matter. 246: 40-49. DOI: 10.1016/S0921-4526(98)00046-5  0.622
1998 Lumpkin NE, Kane BE, Dzurak AS, Clark RG, Starrett RP, O'Brien J, Facer GR, Skougarevsky AV, Miura N, Nakagawa H, Maranowski KD, Gossard AC, Mitchell EE, Müller KH. Dirac series experiments in 800 T fields:: Innovations for transport measurements Physica B-Condensed Matter. 246: 395-399. DOI: 10.1016/S0921-4526(97)00942-3  0.622
1998 Geisselbrecht W, Masten A, Gräbner O, Forkel M, Döhler G, Campman K, Gossard A. Electro-optic effects in GaAs/AlGaAs parabolic quantum well structures Superlattices and Microstructures. 23: 93-96. DOI: 10.1006/Spmi.1996.0312  0.391
1998 Marcus C, Folk J, Patel S, Cronenwett S, Huibers A, Campman K, Gossard A. Mesoscopic fluctuations of tunneling and cotunneling in quantum dots Superlattices and Microstructures. 23: 161-172. DOI: 10.1006/Spmi.1996.0200  0.407
1997 Lundström T, Bergman JP, Holtz PO, Monemar B, Campman K, Merz JL, Gossard AC. Theoretical and Experimental Study of the Radiative Decay Process in a Modulation Doped GaAs/AlGaAs Heterointerface Acta Physica Polonica A. 92: 824-828. DOI: 10.12693/Aphyspola.92.824  0.308
1997 Jackson AW, Pinsukanjana PR, Gossard AC, Coldren LA. In situ monitoring and control for MBE growth of optoelectronic devices Ieee Journal On Selected Topics in Quantum Electronics. 3: 836-844. DOI: 10.1109/2944.640637  0.306
1997 Salis G, Graf B, Ensslin K, Campman K, Maranowski K, Gossard AC. Wave Function Spectroscopy in Quantum Wells with Tunable Electron Density Physical Review Letters. 79: 5106-5109. DOI: 10.1103/Physrevlett.79.5106  0.645
1997 Cronenwett SM, Patel SR, Marcus CM, Campman K, Gossard AC. Mesoscopic Fluctuations of Elastic Cotunneling in Coulomb Blockaded Quantum Dots Physical Review Letters. 79: 2312-2315. DOI: 10.1103/Physrevlett.79.2312  0.42
1997 Rimberg AJ, Ho TR, Kurdak Ç, Clarke J, Campman KL, Gossard AC. Dissipation-Driven Superconductor-Insulator Transition in a Two-Dimensional Josephson-Junction Array Physical Review Letters. 78: 2632-2635. DOI: 10.1103/Physrevlett.78.2632  0.331
1997 Kang W, Young JB, Hannahs ST, Palm E, Campman KL, Gossard AC. Evidence For A Spin Transition In The V=2/5 Fractional Quantum Hall Effect Physical Review B. 56. DOI: 10.1103/Physrevb.56.R12776  0.36
1997 Wendler L, Kraft T, Hartung M, Berger A, Wixforth A, Sundaram M, English JH, Gossard AC. Optical Response Of Grating-Coupler-Induced Intersubband Resonances: The Role Of Wood'S Anomalies Physical Review B. 55: 2303-2314. DOI: 10.1103/Physrevb.55.2303  0.379
1997 Deviatov EV, Dolgopolov VT, Williams FIB, Jager B, Lorke A, Kotthaus JP, Gossard AC. Excitation of edge magnetoplasmons in a two-dimensional electron gas by inductive coupling Applied Physics Letters. 71: 3655-3657. DOI: 10.1063/1.120471  0.346
1997 Hu J, Beck RG, Deng T, Westervelt RM, Maranowski KD, Gossard AC, Whitesides GM. Using soft lithography to fabricate GaAs/AlGaAs heterostructure field effect transistors Applied Physics Letters. 71: 2020-2022. DOI: 10.1063/1.119774  0.608
1997 Crouch CH, Livermore C, Westervelt RM, Campman KL, Gossard AC. Evolution of the Coulomb gap in tunnel-coupled quantum dots Applied Physics Letters. 71: 817-819. DOI: 10.1063/1.119656  0.445
1997 Černe J, Kono J, Inoshita T, Sherwin M, Sundaram M, Gossard AC. Near-infrared sideband generation induced by intense far-infrared radiation in GaAs quantum wells Applied Physics Letters. 70: 3543-3545. DOI: 10.1063/1.119227  0.414
1997 Schmidt H, Campman KL, Gossard AC, Imamoǧlu A. Tunneling induced transparency: Fano interference in intersubband transitions Applied Physics Letters. 70: 3455-3457. DOI: 10.1063/1.119199  0.38
1997 Haubrich AGC, Wharam DA, Kriegelstein H, Manus S, Lorke A, Kotthaus JP, Gossard AC. Parallel quantum-point-contacts as high-frequency-mixers Applied Physics Letters. 70: 3251-3253. DOI: 10.1063/1.119139  0.395
1997 Salis G, Ensslin K, Campman K, Maranowski K, Gossard A. Probing electron probability-density in parabolic quantum wells Physica E: Low-Dimensional Systems and Nanostructures. 1: 254-258. DOI: 10.1016/S1386-9477(97)00054-4  0.666
1997 Marcus C, Patel S, Huibers A, Cronenwett S, Switkes M, Chan I, Clarke R, Folk J, Godijn S, Campman K, Gossard A. Quantum chaos in open versus closed quantum dots: Signatures of interacting particles Chaos, Solitons & Fractals. 8: 1261-1279. DOI: 10.1016/S0960-0779(97)00019-2  0.432
1997 Ferreira AC, Holtz PO, Buyanova I, Monemar B, Sundaram M, Merz JL, Gossard AC. Optical spectroscopy of MBE grown quantum wells at various acceptor doping levels Thin Solid Films. 306: 244-247. DOI: 10.1016/S0040-6090(97)00178-8  0.418
1997 Jackson A, Pinsukanjana P, Coldren L, Gossard A. Monitoring Ga and In desorption and In surface segregation during MBE using atomic absorption Journal of Crystal Growth. 244-249. DOI: 10.1016/S0022-0248(96)01232-8  0.302
1997 Mirin RP, Ibbetson JP, Bowers JE, Gossard AC. Overgrowth of InGaAs quantum dots formed by alternating molecular beam epitaxy Journal of Crystal Growth. 696-701. DOI: 10.1016/S0022-0248(96)00870-6  0.436
1997 Zeuner S, Keay BJ, Allen SJ, Maranowski KD, Gossard AC, Bhattacharya U, Rodwell MJW. THz response of GaAs/AlGaAs superlattices: From classical to quantum dynamics Superlattices and Microstructures. 22. DOI: 10.1006/Spmi.1996.0288  0.676
1997 Patel S, Cronenwett S, Huibers A, Switkes M, Folk J, Marcus C, Campman K, Gossard A. Universal fluctuations of Coulomb blockade peaks in quantum dots Superlattices and Microstructures. 21: 43-48. DOI: 10.1006/Spmi.1996.0139  0.399
1997 Kono J, Su MY, Nordstrom KB, Černe J, Sherwin MS, Allen SJ, Inoshita T, Noda T, Sakaki H, Bauer GEW, Sundaram M, Gossard AC. Terahertz linear and nonlinear dynamics in confined magnetoexcitons Physica Status Solidi (a) Applied Research. 164: 567-570. DOI: 10.1002/1521-396X(199711)164:1<567::Aid-Pssa567>3.0.Co;2-5  0.359
1996 Cerne J, Kono J, Sherwin MS, Sundaram M, Gossard AC, Bauer GE. Terahertz Dynamics of Excitons in GaAs/AlGaAs Quantum Wells. Physical Review Letters. 77: 1131-1134. PMID 10062998 DOI: 10.1103/Physrevlett.77.1131  0.359
1996 Folk JA, Patel SR, Godijn SF, Huibers AG, Cronenwett SM, Marcus CM, Campman K, Gossard AC. Statistics and parametric correlations of Coulomb blockade peak fluctuations in quantum dots. Physical Review Letters. 76: 1699-1702. PMID 10060495 DOI: 10.1103/Physrevlett.76.1699  0.417
1996 Ferreira AC, Holtz PO, Monemar B, Sundaram M, Campman K, Merz JL, Gossard AC. Excitons bound at interacting acceptors in AlxGa1-xAs/GaAs quantum wells. Physical Review. B, Condensed Matter. 54: 16994-16997. PMID 9985830 DOI: 10.1103/Physrevb.54.16994  0.402
1996 Ferreira AC, Holtz PO, Sernelius BE, Buyanova I, Monemar B, Mauritz O, Ekenberg U, Sundaram M, Campman K, Merz JL, Gossard AC. Exciton properties in p-type GaAs/AlxGa1-xAs quantum wells in the high doping regime. Physical Review. B, Condensed Matter. 54: 16989-16993. PMID 9985829 DOI: 10.1103/Physrevb.54.16989  0.406
1996 Zeuner S, Keay BJ, Allen SJ, Maranowski KD, Gossard AC, Bhattacharya U, Rodwell MJ. Transition from classical to quantum response in semiconductor superlattices at THz frequncies. Physical Review. B, Condensed Matter. 53: R1717-R1720. PMID 9983689 DOI: 10.1103/Physrevb.53.R1717  0.646
1996 Waugh FR, Berry MJ, Crouch CH, Livermore C, Mar DJ, Westervelt RM, Campman KL, Gossard AC. Measuring interactions between tunnel-coupled quantum dots. Physical Review. B, Condensed Matter. 53: 1413-1420. PMID 9983601 DOI: 10.1103/Physrevb.53.1413  0.433
1996 Buyanov AV, Ferreira AC, Söderström E, Buyanova IA, Holtz PO, Sernelius B, Monemar B, Sundaram M, Campman K, Merz JL, Gossard AC. Thermally activated intersubband and hopping transport in center-doped p-type GaAs/AlxGa1-xAs quantum wells. Physical Review. B, Condensed Matter. 53: 1357-1361. PMID 9983595 DOI: 10.1103/Physrevb.53.1357  0.383
1996 Lorke A, Kotthaus JP, English JH, Gossard AC. Local Far-Infrared Spectroscopy Of Edge States In The Quantum Hall Regime Physical Review B. 53: 1054-1057. PMID 9983553 DOI: 10.1103/Physrevb.53.1054  0.404
1996 Keay BJ, Aversa C, Zeuner S, Allen SJ, Campman KL, Maranowski KD, Gossard AC, Bhattacharya U, Rodwell MJW. Virtual states, dynamic localization, absolute negative conductance and stimulated multiphoton emission in semiconductor superlattices Semiconductor Science and Technology. 11: 1596-1600. DOI: 10.1088/0268-1242/11/11S/025  0.634
1996 Unterrainer K, Heyman JN, Craig K, Galdrikian B, Sherwin MS, Campman K, Hopkins PF, Gossard AC. Intersubband dynamics of asymmetric quantum wells studied by THz 'optical rectification' Semiconductor Science and Technology. 11: 1591-1595. DOI: 10.1088/0268-1242/11/11S/024  0.427
1996 Nishi K, Mirin R, Leonard D, Medeiros‐Ribeiro G, Petroff PM, Gossard AC. Structural and optical characterization of InAs/InGaAs self‐assembled quantum dots grown on (311)B GaAs Journal of Applied Physics. 80: 3466-3470. DOI: 10.1063/1.363216  0.398
1996 Johnson JL, Samoska LA, Gossard AC, Merz JL, Jack MD, Chapman GR, Baumgratz BA, Kosai K, Johnson SM. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb Journal of Applied Physics. 80: 1116-1127. DOI: 10.1063/1.362849  0.39
1996 Eriksson MA, Beck RG, Topinka M, Katine JA, Westervelt RM, Campman KL, Gossard AC. Cryogenic scanning probe characterization of semiconductor nanostructures Applied Physics Letters. 69: 671-673. DOI: 10.1063/1.117801  0.357
1996 Campman KL, Schmidt H, Imamoglu A, Gossard AC. Interface roughness and alloy‐disorder scattering contributions to intersubband transition linewidths Applied Physics Letters. 69: 2554-2556. DOI: 10.1063/1.117737  0.39
1996 Zeuner S, Allen SJ, Maranowski KD, Gossard AC. Photon‐assisted tunneling in GaAs/AlGaAs superlattices up to room temperature Applied Physics Letters. 69: 2689-2691. DOI: 10.1063/1.117679  0.652
1996 Maranowski KD, Gossard AC, Unterrainer K, Gornik E. Far‐infrared emission from parabolically graded quantum wells Applied Physics Letters. 69: 3522-3524. DOI: 10.1063/1.117232  0.626
1996 Lee ZK, Heiman D, Wang H, Fonstad CG, Sundaram M, Gossard AC. Faraday–Stark optoelectronic effect Applied Physics Letters. 69: 3731-3733. DOI: 10.1063/1.117204  0.346
1996 Heyman JN, Unterrainer K, Craig K, Williams J, Sherwin MS, Campman K, Hopkins PF, Gossard AC, Murdin BN, Langerak CJGM. Far-infrared pump-probe measurements of the intersubband lifetime in an AlGaAs/GaAs coupled-quantum well Applied Physics Letters. 68: 3019-3021. DOI: 10.1063/1.116683  0.364
1996 Asmar NG, Černe J, Markelz AG, Gwinn EG, Sherwin MS, Campman KL, Gossard AC. Temperature of quasi-two-dimensional electron gases under steady-state terahertz drive Applied Physics Letters. 68: 829-831. DOI: 10.1063/1.116547  0.371
1996 Buyanova IA, Ferreira AC, Holtz PO, Monemar B, Campman K, Merz JL, Gossard AC. Effect of hydrogen passivation on Be‐doped AlGaAs/GaAs quantum wells Applied Physics Letters. 68: 1365-1367. DOI: 10.1063/1.116081  0.335
1996 Beck RG, Eriksson MA, Westervelt RM, Campman KL, Gossard AC. Strain-sensing cryogenic field-effect transistor for integrated strain detection in GaAs/AlGaAs microelectromechanical systems Applied Physics Letters. 68: 3763-3765. DOI: 10.1063/1.115999  0.322
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