Arthur C. Gossard - Publications

Affiliations: 
1960-1987 Bell Laboratories, Murray Hill, NJ, United States 
 1987- University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Condensed Matter Physics
Website:
https://www.materials.ucsb.edu/node/1411

344 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Koh YR, Lu H, Gossard AC, Shakouri A. Anisotropic Thermal Conductivity of the Nanoparticles Embedded GaSb Thin Film Semiconductor. Nanotechnology. PMID 32906112 DOI: 10.1088/1361-6528/abb6a3  0.56
2020 Nandi U, Dutzi K, Deninger A, Lu H, Norman J, Gossard AC, Vieweg N, Preu S. ErAs:In(Al)GaAs photoconductor-based time domain system with 4.5  THz single shot bandwidth and emitted terahertz power of 164  µW. Optics Letters. 45: 2812-2815. PMID 32412473 DOI: 10.1364/OL.388870  0.56
2020 Wan Y, Shang C, Huang J, Xie Z, Jain A, Norman J, Chen B, Gossard AC, Bowers JE. Low-Dark Current 1.55 Micrometer InAs Quantum Dash Waveguide Photodiodes. Acs Nano. PMID 32083840 DOI: 10.1021/acsnano.9b09715  0.4
2019 Camenzind LC, Yu L, Stano P, Zimmerman JD, Gossard AC, Loss D, Zumbühl DM. Spectroscopy of Quantum Dot Orbitals with In-Plane Magnetic Fields. Physical Review Letters. 122: 207701. PMID 31172765 DOI: 10.1103/PhysRevLett.122.207701  0.6
2018 Valovcin DC, Banks HB, Mack S, Gossard AC, West K, Pfeiffer L, Sherwin MS. Optical frequency combs from high-order sideband generation. Optics Express. 26: 29807-29816. PMID 30469939  0.48
2018 Camenzind LC, Yu L, Stano P, Zimmerman JD, Gossard AC, Loss D, Zumbühl DM. Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot. Nature Communications. 9: 3454. PMID 30150721 DOI: 10.1038/s41467-018-05879-x  0.6
2018 Inoue D, Jung D, Norman J, Wan Y, Nishiyama N, Arai S, Gossard AC, Bowers JE. Directly modulated 1.3 μm quantum dot lasers epitaxially grown on silicon. Optics Express. 26: 7022-7033. PMID 29609387  0.4
2017 Wan Y, Zhang Z, Chao R, Norman J, Jung D, Shang C, Li Q, Kennedy MJ, Liang D, Zhang C, Shi JW, Gossard AC, Lau KM, Bowers JE. Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates. Optics Express. 25: 27715-27723. PMID 29092242  0.4
2017 Wan Y, Jung D, Norman J, Shang C, MacFarlane I, Li Q, Kennedy MJ, Gossard AC, Lau KM, Bowers JE. O-band electrically injected quantum dot micro-ring lasers on on-axis (001) GaP/Si and V-groove Si. Optics Express. 25: 26853-26860. PMID 29092170  0.4
2017 Liu AY, Komljenovic T, Davenport ML, Gossard AC, Bowers JE. Reflection sensitivity of 1.3 μm quantum dot lasers epitaxially grown on silicon. Optics Express. 25: 9535-9543. PMID 28468336  0.4
2017 Norman J, Kennedy MJ, Selvidge J, Li Q, Wan Y, Liu AY, Callahan PG, Echlin MP, Pollock TM, Lau KM, Gossard AC, Bowers JE. Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si. Optics Express. 25: 3927-3934. PMID 28241602  0.4
2017 Liu AY, Peters J, Huang X, Jung D, Norman J, Lee ML, Gossard AC, Bowers JE. Electrically pumped continuous-wave 1.3  μm quantum-dot lasers epitaxially grown on on-axis (001)  GaP/Si. Optics Letters. 42: 338-341. PMID 28081107 DOI: 10.1364/OL.42.000338  0.4
2016 Li Q, Wan Y, Liu AY, Gossard AC, Bowers JE, Hu EL, Lau KM. 1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon. Optics Express. 24: 21038-45. PMID 27607707  0.4
2016 Wan Y, Li Q, Liu AY, Gossard AC, Bowers JE, Hu EL, Lau KM. Optically pumped 1.3  μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon. Optics Letters. 41: 1664-7. PMID 27192313  0.4
2016 Wan Y, Li Q, Liu AY, Gossard AC, Bowers JE, Hu EL, Lau KM. Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon Optics Letters. 41: 1664-1667. DOI: 10.1364/OL.41.001664  0.4
2016 Andreakou P, Mikhailov AV, Cronenberger S, Scalbert D, Nalitov A, Kavokin AV, Nawrocki M, Butov LV, Campman KL, Gossard AC, Vladimirova M. Influence of magnetic quantum confined Stark effect on the spin lifetime of indirect excitons Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/PhysRevB.93.115410  0.48
2016 Wan Y, Li Q, Liu AY, Gossard AC, Bowers JE, Hu EL, Lau KM. Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources Applied Physics Letters. 109. DOI: 10.1063/1.4955456  0.4
2016 Wan Y, Li Q, Liu AY, Chow WW, Gossard AC, Bowers JE, Hu EL, Lau KM. Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates Applied Physics Letters. 108. DOI: 10.1063/1.4952600  0.4
2016 Dorow CJ, Kuznetsova YY, Leonard JR, Chu MK, Butov LV, Wilkes J, Hanson M, Gossard AC. Indirect excitons in a potential energy landscape created by a perforated electrode Applied Physics Letters. 108. DOI: 10.1063/1.4942204  0.44
2015 Regensburger S, Mittendorff M, Winnerl S, Lu H, Gossard AC, Preu S. Broadband THz detection from 0.1 to 22 THz with large area field-effect transistors. Optics Express. 23: 20732-42. PMID 26367925  0.56
2015 Kuznetsova YY, Andreakou P, Hasling MW, Leonard JR, Calman EV, Butov LV, Hanson M, Gossard AC. Two-dimensional snowflake trap for indirect excitons. Optics Letters. 40: 589-92. PMID 25680157 DOI: 10.1364/OL.40.000589  0.8
2015 Mohammed AM, Koh YR, Vermeersch B, Lu H, Burke PG, Gossard AC, Shakouri A. Fractal Lévy Heat Transport in Nanoparticle Embedded Semiconductor Alloys. Nano Letters. 15: 4269-73. PMID 25654652 DOI: 10.1021/nl5044665  0.56
2015 Yoneda J, Otsuka T, Takakura T, Pioro-Ladrière M, Brunner R, Lu H, Nakajima T, Obata T, Noiri A, Palmstrøm CJ, Gossard AC, Tarucha S. Robust micromagnet design for fast electrical manipulations of single spins in quantum dots Applied Physics Express. 8. DOI: 10.7567/APEX.8.084401  0.8
2015 Liu AY, Srinivasan S, Norman J, Gossard AC, Bowers JE. Quantum dot lasers for silicon photonics [Invited] Photonics Research. 3: B1-B9. DOI: 10.1364/PRJ.3.0000B1  0.4
2015 Regensburger S, Mittendorff M, Winnerl S, Lu H, Gossard AC, Preu S. Broadband THz detection from 0.1 to 22THz with large area field-effect transistors Optics Express. 23: 20732-20742. DOI: 10.1364/OE.23.020732  0.56
2015 Wistey MA, Baraskar AK, Singisetti U, Burek GJ, Shin B, Kim E, McIntyre PC, Gossard AC, Rodwell MJW. Control of InGaAs and InAs facets using metal modulation epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4905497  0.56
2015 Ziabari A, Bahk JH, Xuan Y, Ye PD, Kendig D, Yazawa K, Burke PG, Lu H, Gossard AC, Shakouri A. Sub-diffraction limit thermal imaging for HEMT devices Annual Ieee Semiconductor Thermal Measurement and Management Symposium. 2015: 82-87. DOI: 10.1109/SEMI-THERM.2015.7100144  0.56
2015 Liu AY, Herrick RW, Ueda O, Petroff PM, Gossard AC, Bowers JE. Reliability of InAs/GaAs quantum dot lasers epitaxially grown on silicon Ieee Journal On Selected Topics in Quantum Electronics. 21. DOI: 10.1109/JSTQE.2015.2418226  0.8
2015 Regensburger S, Mittendorff M, Winnerl S, Lu H, Gossard AC, Preu S. Symmetry effects in broadband, room-temperature field effect transistor THz detectors Irmmw-Thz 2015 - 40th International Conference On Infrared, Millimeter, and Terahertz Waves. DOI: 10.1109/IRMMW-THz.2015.7327721  0.8
2015 Chow WW, Liu AY, Gossard AC, Bowers JE, Jahnke F. Gain-current relationships in quantum-dot and quantum-well lasers: Theory and experiment 2015 Ieee Photonics Conference, Ipc 2015. 569-570. DOI: 10.1109/IPCon.2015.7323527  0.8
2015 Huang CY, Lee S, Chobpattana V, Stemmer S, Gossard AC, Thibeault B, Mitchell W, Rodwell M. Low Power III-V InGaAs MOSFETs featuring InP recessed source/drain spacers with Ion=120 μa/μm at Ioff=1 nA/μm and VDS=0.5 v Technical Digest - International Electron Devices Meeting, Iedm. 2015: 25.4.1-25.4.4. DOI: 10.1109/IEDM.2014.7047107  0.44
2015 Rodwell MJW, Huang CY, Rode J, Choudhary P, Lee S, Gossard AC, Long P, Wilson E, Mehrotra S, Povolotskyi M, Klimeck G, Urteaga M, Brar B, Chobpattanna V, Stemmer S. Transistors for VLSI, for wireless: A view forwards through fog Device Research Conference - Conference Digest, Drc. 2015: 19-20. DOI: 10.1109/DRC.2015.7175529  0.56
2015 Biesinger DEF, Scheller CP, Braunecker B, Zimmerman J, Gossard AC, Zumbühl DM. Intrinsic Metastabilities in the Charge Configuration of a Double Quantum Dot Physical Review Letters. 115. DOI: 10.1103/PhysRevLett.115.106804  0.8
2015 Remeika M, Leonard JR, Dorow CJ, Fogler MM, Butov LV, Hanson M, Gossard AC. Measurement of exciton correlations using electrostatic lattices Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/PhysRevB.92.115311  0.8
2015 Yang S, Butov LV, Simons BD, Campman KL, Gossard AC. Fluctuation and commensurability effect of exciton density wave Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/PhysRevB.91.245302  0.8
2015 Andreakou P, Cronenberger S, Scalbert D, Nalitov A, Gippius NA, Kavokin AV, Nawrocki M, Leonard JR, Butov LV, Campman KL, Gossard AC, Vladimirova M. Nonlinear optical spectroscopy of indirect excitons in coupled quantum wells Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/PhysRevB.91.125437  0.8
2015 Hornibrook JM, Colless JI, Conway Lamb ID, Pauka SJ, Lu H, Gossard AC, Watson JD, Gardner GC, Fallahi S, Manfra MJ, Reilly DJ. Cryogenic control architecture for large-scale quantum computing Physical Review Applied. 3. DOI: 10.1103/PhysRevApplied.3.024010  0.8
2015 Chow WW, Liu AY, Gossard AC, Bowers JE. Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers Applied Physics Letters. 107. DOI: 10.1063/1.4934838  0.8
2015 Hasling MW, Kuznetsova YY, Andreakou P, Leonard JR, Calman EV, Dorow CJ, Butov LV, Hanson M, Gossard AC. Stirring potential for indirect excitons Journal of Applied Physics. 117. DOI: 10.1063/1.4905080  0.44
2015 Burke PG, Curtin BM, Bowers JE, Gossard AC. Minority carrier barrier heterojunctions for improved thermoelectric efficiency Nano Energy. 12: 735-741. DOI: 10.1016/j.nanoen.2015.01.037  0.4
2014 Yoneda J, Otsuka T, Nakajima T, Takakura T, Obata T, Pioro-Ladrière M, Lu H, Palmstrøm CJ, Gossard AC, Tarucha S. Fast electrical control of single electron spins in quantum dots with vanishing influence from nuclear spins. Physical Review Letters. 113: 267601. PMID 25615383 DOI: 10.1103/PhysRevLett.113.267601  0.8
2014 Berry CW, Hashemi MR, Preu S, Lu H, Gossard AC, Jarrahi M. Plasmonics enhanced photomixing for generating quasi-continuous-wave frequency-tunable terahertz radiation. Optics Letters. 39: 4522-4. PMID 25078218 DOI: 10.1364/OL.39.004522  0.8
2014 Wang H, Bahk JH, Kang C, Hwang J, Kim K, Kim J, Burke P, Bowers JE, Gossard AC, Shakouri A, Kim W. Right sizes of nano- and microstructures for high-performance and rigid bulk thermoelectrics. Proceedings of the National Academy of Sciences of the United States of America. 111: 10949-54. PMID 25028497 DOI: 10.1073/pnas.1403601111  0.4
2014 Colless JI, Croot XG, Stace TM, Doherty AC, Barrett SD, Lu H, Gossard AC, Reilly DJ. Raman phonon emission in a driven double quantum dot. Nature Communications. 5: 3716. PMID 24759675 DOI: 10.1038/ncomms4716  0.8
2014 Higginbotham AP, Kuemmeth F, Hanson MP, Gossard AC, Marcus CM. Coherent operations and screening in multielectron spin qubits. Physical Review Letters. 112: 026801. PMID 24484035 DOI: 10.1103/PhysRevLett.112.026801  0.8
2014 Lu H, Ouellette DG, Preu S, Watts JD, Zaks B, Burke PG, Sherwin MS, Gossard AC. Self-assembled ErSb nanostructures with optical applications in infrared and terahertz. Nano Letters. 14: 1107-12. PMID 24206535 DOI: 10.1021/nl402436g  0.8
2014 Liu AY, Zhang C, Snyder A, Lubyshev D, Fastenau JM, Liu AWK, Gossard AC, Bowers JE. MBE growth of P-doped 1.3 μ m InAs quantum dot lasers on silicon Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4864148  0.8
2014 Lee S, Chobpattana V, Huang CY, Thibeault BJ, Mitchell W, Stemmer S, Gossard AC, Rodwell MJW. Record Ion (0.50 mA/μm at VDD = 0.5 v and Ioff = 100 nA/μm) 25 nm-gate-length ZrO2/InAs/InAlAs MOSFETs Digest of Technical Papers - Symposium On Vlsi Technology. DOI: 10.1109/VLSIT.2014.6894363  0.8
2014 Liu AY, Zhang C, Snyder A, Lubychev D, Fastenau JM, Liu AWK, Gossard AC, Bowers JE. High performance 1.3μm InAs quantum dot lasers epitaxially grown on silicon Conference On Optical Fiber Communication, Technical Digest Series. DOI: 10.1109/OFC.2014.6887173  0.8
2014 Bowers JE, Bovington JT, Liu AY, Gossard AC. A path to 300 mm hybrid silicon photonic integrated circuits Conference On Optical Fiber Communication, Technical Digest Series. DOI: 10.1109/OFC.2014.6886644  0.8
2014 Lee S, Huang CY, Cohen-Elias D, Thibeault BJ, Mitchell W, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. Highly scalable raised source/drain InAs quantum well MOSFETs exhibiting ION = 482 μA/μm at IOFF = 100 nA/μm and V DD = 0.5 V Ieee Electron Device Letters. 35: 621-623. DOI: 10.1109/LED.2014.2317146  0.8
2014 Huang CY, Lee S, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. S5-H6: Leakage current suppression in InGaaS-channel MOSFETs: Recessed InP source/drain spacers and InP channel caps Lester Eastman Conference 2014 - High Performance Devices, Lec 2014. DOI: 10.1109/LEC.2014.6951570  0.8
2014 Berry CW, Hashemi MR, Preu S, Lu H, Gossard AC, Jarrahi M. High power terahertz generation from ErAs: InGaAs plasmonic photomixers International Conference On Infrared, Millimeter, and Terahertz Waves, Irmmw-Thz. DOI: 10.1109/IRMMW-THz.2014.6956155  0.8
2014 Liu AY, Zhang C, Gossard AC, Bowers JE. Quantum dot lasers on silicon Ieee International Conference On Group Iv Photonics Gfp. 205-206. DOI: 10.1109/Group4.2014.6961926  0.8
2014 Huang CY, Lee S, Elias DC, Law JJM, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. Influence of InP source/drain layers upon the DC characteristics of InAs/InGaAs MOSFETs Device Research Conference - Conference Digest, Drc. 225-226. DOI: 10.1109/DRC.2014.6872379  0.8
2014 Lee S, Huang CY, Elias DC, Thibeault BJ, Mitchell W, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. 35 nm-Lg raised S/D In0.53Ga0.47As quantum-well MOSFETs with 81 mV/decade subthreshold swing at VDS=0.5 v Device Research Conference - Conference Digest, Drc. 223-224. DOI: 10.1109/DRC.2014.6872378  0.8
2014 Rodwell MJW, Lee S, Huang CY, Elias D, Chobpattanna V, Rode J, Chiang HW, Choudhary P, Maurer R, Urteaga M, Brar B, Gossard AC, Stemmer S. Nanometer InP electron devices for VLSI and THz applications Device Research Conference - Conference Digest, Drc. 215-216. DOI: 10.1109/DRC.2014.6872374  0.8
2014 Berry CW, Hashemi MR, Jarrahi M, Preu S, Lu H, Gossard AC. Terahertz radiation enhancement through use of plasmonic photomixers Ieee Antennas and Propagation Society, Ap-S International Symposium (Digest). 1604-1605. DOI: 10.1109/APS.2014.6905128  0.8
2014 Staley NE, Ray N, Kastner MA, Hanson MP, Gossard AC. Electric-field-driven insulating-to-conducting transition in a mesoscopic quantum dot lattice Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/PhysRevB.90.195443  0.8
2014 Banks HB, Hofmann A, Mack S, Gossard AC, Sherwin MS. Antenna-boosted mixing of terahertz and near-infrared radiation Applied Physics Letters. 105. DOI: 10.1063/1.4894634  0.8
2014 Berry CW, Hashemi MR, Preu S, Lu H, Gossard AC, Jarrahi M. High power terahertz generation using 1550nm plasmonic photomixers Applied Physics Letters. 105. DOI: 10.1063/1.4890102  0.8
2014 Suen JY, Krogen PR, Preu S, Lu H, Gossard AC, Driscoll DC, Lubin PM. Measurement and modeling of ErAs:In0.53Ga0.47As nanocomposite photoconductivity for THz generation at 1.55 μ m pump wavelength Journal of Applied Physics. 116. DOI: 10.1063/1.4886180  0.8
2014 Favaloro T, Ziabari A, Bahk JH, Burke P, Lu H, Bowers J, Gossard A, Bian Z, Shakouri A. High temperature thermoreflectance imaging and transient Harman characterization of thermoelectric energy conversion devices Journal of Applied Physics. 116. DOI: 10.1063/1.4885198  0.8
2014 Scheller CP, Heizmann S, Bedner K, Giss D, Meschke M, Zumbühl DM, Zimmerman JD, Gossard AC. Silver-epoxy microwave filters and thermalizers for millikelvin experiments Applied Physics Letters. 104. DOI: 10.1063/1.4880099  0.8
2014 Huang CY, Law JJM, Lu H, Jena D, Rodwell MJW, Gossard AC. Two dimensional electron transport in modulation-doped In 0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells Journal of Applied Physics. 115. DOI: 10.1063/1.4869498  0.8
2014 Hornibrook JM, Colless JI, Mahoney AC, Croot XG, Blanvillain S, Lu H, Gossard AC, Reilly DJ. Frequency multiplexing for readout of spin qubits Applied Physics Letters. 104. DOI: 10.1063/1.4868107  0.8
2014 Andreakou P, Poltavtsev SV, Leonard JR, Calman EV, Remeika M, Kuznetsova YY, Butov LV, Wilkes J, Hanson M, Gossard AC. Optically controlled excitonic transistor Applied Physics Letters. 104. DOI: 10.1063/1.4866855  0.8
2014 Liu AY, Zhang C, Norman J, Snyder A, Lubyshev D, Fastenau JM, Liu AWK, Gossard AC, Bowers JE. High performance continuous wave 1.3 μ m quantum dot lasers on silicon Applied Physics Letters. 104. DOI: 10.1063/1.4863223  0.8
2014 Maradan D, Casparis L, Liu TM, Biesinger DEF, Scheller CP, Zumbühl DM, Zimmerman JD, Gossard AC. GaAs quantum dot thermometry using direct transport and charge sensing Journal of Low Temperature Physics. 175: 784-798. DOI: 10.1007/s10909-014-1169-6  0.8
2014 Bowers JE, Bovington JT, Liu AY, Gossard AC. A path to 300 mm hybrid silicon photonic integrated circuits Optical Fiber Communication Conference, Ofc 2014 0.8
2014 Kuznetsova YY, Calman EV, Butov LV, Campman KL, Gossard AC. Indirect excitons in high magnetic fields Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014.  0.8
2014 Berry CW, Hashemi MR, Preu S, Lu H, Gossard AC, Jarrahi M. Plasmonic photomixers for increased terahertz radiation powers at 1550 nm optical pump wavelength Optics Infobase Conference Papers 0.8
2014 Preu S, Lu H, Kawasaki JK, Ouellette DG, Palmstrom CJ, Sherwin MS, Gossard AC. THz spectroscopy of self-assembled ErSb nanowires Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014.  0.8
2014 Preu S, Lu H, Kawasaki JK, Ouellette DG, Palmstrom CJ, Sherwin MS, Gossard AC. THz spectroscopy of self-assembled ErSb nanowires Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014.  0.8
2014 Kuznetsova YY, Calman EV, Leonard JR, Butov LV, Campman KL, Gossard AC. Spin currents and polarization textures in optically created indirect excitons Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014.  0.8
2014 Kuznetsova YY, Calman EV, Leonard JR, Butov LV, Campman KL, Gossard AC. Spin currents and polarization textures in optically created indirect excitons Conference On Lasers and Electro-Optics Europe - Technical Digest. 2014.  0.8
2013 Colless JI, Mahoney AC, Hornibrook JM, Doherty AC, Lu H, Gossard AC, Reilly DJ. Dispersive readout of a few-electron double quantum dot with fast RF gate sensors. Physical Review Letters. 110: 046805. PMID 25166190 DOI: 10.1103/PhysRevLett.110.046805  0.8
2013 High AA, Hammack AT, Leonard JR, Yang S, Butov LV, Ostatnický T, Vladimirova M, Kavokin AV, Liew TC, Campman KL, Gossard AC. Spin currents in a coherent exciton gas. Physical Review Letters. 110: 246403. PMID 25165944 DOI: 10.1103/PhysRevLett.110.246403  0.8
2013 Banks H, Zaks B, Yang F, Mack S, Gossard AC, Liu R, Sherwin MS. Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations. Physical Review Letters. 111: 267402. PMID 24483813 DOI: 10.1103/PhysRevLett.111.267402  0.8
2013 Medford J, Beil J, Taylor JM, Bartlett SD, Doherty AC, Rashba EI, DiVincenzo DP, Lu H, Gossard AC, Marcus CM. Self-consistent measurement and state tomography of an exchange-only spin qubit. Nature Nanotechnology. 8: 654-9. PMID 23995458 DOI: 10.1038/nnano.2013.168  0.8
2013 Medford J, Beil J, Taylor JM, Rashba EI, Lu H, Gossard AC, Marcus CM. Quantum-dot-based resonant exchange qubit. Physical Review Letters. 111: 050501. PMID 23952375 DOI: 10.1103/PhysRevLett.111.050501  0.8
2013 Preu S, Mittendorff M, Winnerl S, Lu H, Gossard AC, Weber HB. Ultra-fast transistor-based detectors for precise timing of near infrared and THz signals Optics Express. 21: 17941-17950. PMID 23938666 DOI: 10.1364/OE.21.017941  0.8
2013 Kawasaki JK, Schultz BD, Lu H, Gossard AC, Palmstrøm CJ. Surface-mediated tunable self-assembly of single crystal semimetallic ErSb/GaSb nanocomposite structures. Nano Letters. 13: 2895-901. PMID 23701166 DOI: 10.1021/nl4012563  0.8
2013 Ribeiro H, Burkard G, Petta JR, Lu H, Gossard AC. Coherent adiabatic spin control in the presence of charge noise using tailored pulses. Physical Review Letters. 110: 086804. PMID 23473186 DOI: 10.1103/PhysRevLett.110.086804  0.8
2013 Huang CY, Law JJM, Lu H, Rodwell MJW, Gossard AC. Development of AlAsSb as a barrier material for ultra-thin-channel InGaAs nMOSFETs Materials Research Society Symposium Proceedings. 1561: 1-6. DOI: 10.1557/opl.2013.821  0.8
2013 Bauerschmidt ST, Döhler GH, Lu H, Gossard AC, Malzer S, Preu S. Arrayed free space continuous-wave terahertz photomixers Optics Letters. 38: 3673-3676. DOI: 10.1364/OL.38.003673  0.8
2013 Preu S, Regensburger S, Kim S, Mittendorff M, Winnerl S, Malzer S, Lu H, Burke PG, Gossard AC, Weber HB, Sherwin MS. Broadband THz detection and homodyne mixing using GaAs highelectron- Mobility transistor rectifiers Proceedings of Spie - the International Society For Optical Engineering. 8900. DOI: 10.1117/12.2029478  0.8
2013 Criado AR, De Dios C, Prior E, Döhler GH, Preu S, Malzer S, Lu H, Gossard AC, Acedo P. Continuous-wave sub-Thz photonic generation with ultra-narrow line width, ultra-high resolution, full frequency range coverage and high long-term frequency stability Ieee Transactions On Terahertz Science and Technology. 3: 461-471. DOI: 10.1109/TTHZ.2013.2260374  0.8
2013 Lee S, Huang CY, Carter AD, Law JJM, Elias DC, Chobpattana V, Thibeault BJ, Mitchell W, Stemmer S, Gossard AC, Rodwell MJW. High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching Conference Proceedings - International Conference On Indium Phosphide and Related Materials. DOI: 10.1109/ICIPRM.2013.6562630  0.8
2013 Carter AD, Lee S, Elias DC, Huang CY, Law JJM, Mitchell WJ, Thibeault BJ, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. Performance impact of post-regrowth channel etching on InGaAs MOSFETs having MOCVD source-drain regrowth Device Research Conference - Conference Digest, Drc. 23-24. DOI: 10.1109/DRC.2013.6633776  0.8
2013 Remeika M, Hammack AT, Poltavtsev S, Butov LV, Wilkes J, Ivanov AL, Campman KL, Hanson M, Gossard AC. Pattern formation in the exciton inner ring Cleo: Qels_fundamental Science, Cleo:Qels Fs 2013. DOI: 10.1103/PhysRevB.88.125307  0.8
2013 Lee S, Huang CY, Cohen-Elias D, Law JJM, Chobpattanna V, Krämer S, Thibeault BJ, Mitchell W, Stemmer S, Gossard AC, Rodwell MJW. High performance raised source/drain InAs/In0.53Ga 0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer Applied Physics Letters. 103. DOI: 10.1063/1.4838660  0.8
2013 Huang CY, Lee S, Cohen-Elias D, Law JJM, Carter AD, Chobpattana V, Stemmer S, Gossard AC, Rodwell MJW. Reduction of leakage current in In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors using AlAs 0.56Sb0.44 confinement layers Applied Physics Letters. 103. DOI: 10.1063/1.4831683  0.8
2013 Baraskar A, Gossard AC, Rodwell MJW. Lower limits to metal-semiconductor contact resistance: Theoretical models and experimental data Journal of Applied Physics. 114. DOI: 10.1063/1.4826205  0.8
2013 Feser JP, Xu D, Lu H, Zhao Y, Shakouri A, Gossard AC, Majumdar A. Reduced thermal conductivity in Er-doped epitaxial InxGa 1-xSb alloys Applied Physics Letters. 103. DOI: 10.1063/1.4820151  0.8
2013 Law JJM, Carter AD, Lee S, Huang CY, Lu H, Rodwell MJW, Gossard AC. Co-doping of InxGa1-xAs with silicon and tellurium for improved ultra-low contact resistance Journal of Crystal Growth. 378: 92-95. DOI: 10.1016/j.jcrysgro.2012.12.122  0.8
2013 Remeika M, Hammack AT, Poltavtsev S, Butov LV, Wilkes J, Ivanov AL, Campman KL, Hanson M, Gossard AC. Pattern formation in the exciton inner ring Cleo: Qels_fundamental Science, Cleo:Qels Fs 2013 0.8
2013 Lee S, Huang CY, Carter AD, Elias DC, Law JJM, Chobpattana V, Kramer S, Thibeault BJ, Mitchell W, Stemmer S, Gossard AC, Rodwell MJW. Record extrinsic transconductance (2.45 mS/μm at VDS = 0.5 V) InAs/In0.53Ga0.47As channel MOSFETs using MOCVD source-drain regrowth Digest of Technical Papers - Symposium On Vlsi Technology. T246-T247.  0.8
2013 Remeika M, Hammack AT, Poltavtsev S, Butov LV, Wilkes J, Ivanov AL, Campman KL, Hanson M, Gossard AC. Pattern formation in the exciton inner ring Cleo: Qels_fundamental Science, Cleo:Qels Fs 2013 0.8
2012 High AA, Leonard JR, Remeika M, Butov LV, Hanson M, Gossard AC. Reply to "comment on 'condensation of excitons in a trap'". Nano Letters. 12: 5422. PMID 22978516 DOI: 10.1021/nl302928v  0.8
2012 Preu S, Lu H, Sherwin MS, Gossard AC. Detection of nanosecond-scale, high power THz pulses with a field effect transistor. The Review of Scientific Instruments. 83: 053101. PMID 22667596 DOI: 10.1063/1.4705986  0.8
2012 High AA, Leonard JR, Remeika M, Butov LV, Hanson M, Gossard AC. Condensation of excitons in a trap. Nano Letters. 12: 2605-9. PMID 22509898 DOI: 10.1021/nl300983n  0.8
2012 Medford J, Cywi?ski ?, Barthel C, Marcus CM, Hanson MP, Gossard AC. Scaling of dynamical decoupling for spin qubits. Physical Review Letters. 108: 086802. PMID 22463554 DOI: 10.1103/PhysRevLett.108.086802  0.8
2012 High AA, Leonard JR, Hammack AT, Fogler MM, Butov LV, Kavokin AV, Campman KL, Gossard AC. Spontaneous coherence in a cold exciton gas. Nature. 483: 584-8. PMID 22437498 DOI: 10.1038/nature10903  0.8
2012 Preu S, Kim S, Verma R, Burke PG, Vinh NQ, Sherwin MS, Gossard AC. Terahertz detection by a homodyne field effect transistor multiplicative mixer Ieee Transactions On Terahertz Science and Technology. 2: 278-283. DOI: 10.1109/TTHZ.2012.2191671  0.8
2012 Lee S, Law JJM, Carter AD, Thibeault BJ, Mitchell W, Chobpattana V, Krämer S, Stemmer S, Gossard AC, Rodwell MJW. Substitutional-gate MOSFETs with composite (In 0.53Ga 0.47As/InAs In 0.53Ga 0.47As) channels and self-aligned MBE source-drain regrowth Ieee Electron Device Letters. 33: 1553-1555. DOI: 10.1109/LED.2012.2215572  0.8
2012 Baraskar A, Gossard AC, Rodwell MJW. Lower limits to specific contact resistivity Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 196-199. DOI: 10.1109/ICIPRM.2012.6403356  0.8
2012 Lee S, Carter AD, Law JJM, Elias DC, Chobpattana V, Hong Lu, Thibeault BJ, Mitchell W, Stemmer S, Gossard AC, Rodwell MJW. High performance substitutional-gate MOSFETs using MBE source-drain regrowth and scaled gate oxides Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 155-158. DOI: 10.1109/ICIPRM.2012.6403345  0.8
2012 Andres-Garcia B, Garcia-Muñoz LE, Segovia-Vargas D, Bauerschmidt S, Döhler G, Preu S, Malzer S, Lu H, Gossard AC. High power terahertz photomixer arrays Proceedings of 6th European Conference On Antennas and Propagation, Eucap 2012. 1007-1010. DOI: 10.1109/EuCAP.2012.6206195  0.8
2012 Law JJM, Carter AD, Lee S, Gossard AC, Rodwell MJW. Regrown ohmic contacts to In xGa 1-xAs approaching the quantum conductivity limit Device Research Conference - Conference Digest, Drc. 199-200. DOI: 10.1109/DRC.2012.6257010  0.8
2012 Rodwell MJW, Rode J, Chiang HW, Choudhary P, Reed T, Bloch E, Danesgar S, Park HC, Gossard AC, Thibeault BJ, Mitchell W, Urteaga M, Griffith Z, Hacker J, Seo M, et al. THz indium phosphide bipolar transistor technology Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2012.6340091  0.8
2012 Stehlik J, Dovzhenko Y, Petta JR, Johansson JR, Nori F, Lu H, Gossard AC. Landau-Zener-Stückelberg interferometry of a single electron charge qubit Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/PhysRevB.86.121303  0.8
2012 Kuznetsova YY, Leonard JR, Butov LV, Wilkes J, Muljarov EA, Campman KL, Gossard AC. Excitation energy dependence of the exciton inner ring Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/PhysRevB.85.165452  0.8
2012 Barthel C, Medford J, Bluhm H, Yacoby A, Marcus CM, Hanson MP, Gossard AC. Relaxation and readout visibility of a singlet-triplet qubit in an Overhauser field gradient Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/PhysRevB.85.035306  0.8
2012 Burke PG, Ismer L, Lu H, Frantz E, Janotti A, Van De Walle CG, Bowers JE, Gossard AC. Electrically active Er doping in InAs, In0.53Ga 0.47As, and GaAs Applied Physics Letters. 101. DOI: 10.1063/1.4769248  0.8
2012 Blanvillain S, Colless JI, Reilly DJ, Lu H, Gossard AC. Suppressing on-chip electromagnetic crosstalk for spin qubit devices Journal of Applied Physics. 112. DOI: 10.1063/1.4752863  0.8
2012 Preu S, Mittendorff M, Lu H, Weber HB, Winnerl S, Gossard AC. 1550 nm ErAs:In(Al)GaAs large area photoconductive emitters Applied Physics Letters. 101. DOI: 10.1063/1.4750244  0.8
2012 Leonard JR, Remeika M, Kuznetsova YY, High AA, Butov LV, Hanson M, Gossard AC. Transport of indirect excitons in a potential energy gradient 2012 Conference On Lasers and Electro-Optics, Cleo 2012. DOI: 10.1063/1.4722938  0.8
2012 Clinger LE, Pernot G, Buehl TE, Burke PG, Gossard AC, Palmstrom CJ, Shakouri A, Zide JMO. Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites Journal of Applied Physics. 111. DOI: 10.1063/1.4711095  0.8
2012 Dyer GC, Preu S, Aizin GR, Mikalopas J, Grine AD, Reno JL, Hensley JM, Vinh NQ, Gossard AC, Sherwin MS, Allen SJ, Shaner EA. Enhanced performance of resonant sub-terahertz detection in a plasmonic cavity Applied Physics Letters. 100. DOI: 10.1063/1.3687698  0.8
2012 Remeika M, Fogler MM, Butov LV, Hanson M, Gossard AC. Two-dimensional electrostatic lattices for indirect excitons Applied Physics Letters. 100. DOI: 10.1063/1.3682302  0.8
2012 Preu S, Kim S, Verma R, Burke PG, Sherwin MS, Gossard AC. An improved model for non-resonant terahertz detection in field-effect transistors Journal of Applied Physics. 111. DOI: 10.1063/1.3676211  0.8
2012 Criado AR, De Dios C, Döhler GH, Preu S, Malzer S, Bauerschmidt S, Lu H, Gossard AC, Acedo P. Ultra-narrow linewidth CW sub-THz generation using GS based OFCG and n-i-pn-i-p superlattice photomixers Electronics Letters. 48: 1425-1426. DOI: 10.1049/el.2012.3158  0.8
2012 Burke PG, Buehl TE, Gilles P, Lu H, Shakouri A, Palmstrom CJ, Bowers JE, Gossard AC. Controlling n-type carrier density from Er doping of InGaAs with MBE growth temperature Journal of Electronic Materials. 41: 948-953. DOI: 10.1007/s11664-012-2050-5  0.8
2012 Remeika M, Fogler MM, Butov LV, Hanson M, Gossard AC. Electrostatic lattices for indirect excitons in coupled quantum wells 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.8
2012 Preu S, Kim S, Burke PG, Sherwin MS, Gossard AC. Multiplicative mixing and detection of THz signals with a field effect transistor 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.8
2012 High AA, Leonard JR, Remeika M, Butov LV, Hanson M, Gossard AC. Spontaneous coherence of indirect excitons in a trap 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.8
2012 Leonard JR, Remeika M, Kuznetsova YY, High AA, Butov LV, Hanson M, Gossard AC. Transport of indirect excitons in a potential energy gradient Optics Infobase Conference Papers 0.8
2012 High AA, Leonard JR, Hammack AT, Fogler MM, Butov LV, Kavokin AV, Campman KL, Gossard AC. Spontaneous coherence in a cold exciton gas 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.8
2012 Remeika M, Fogler MM, Butov LV, Hanson M, Gossard AC. Electrostatic lattices for indirect excitons in coupled quantumwells Optics Infobase Conference Papers 0.8
2012 Preu S, Kim S, Burke PG, Sherwin MS, Gossard AC. Multiplicative mixing and detection of THz signals with a field effect transistor 2012 Conference On Lasers and Electro-Optics, Cleo 2012 0.8
2012 High AA, Leonard JR, Remeika M, Butov LV, Hanson M, Gossard AC. Spontaneous coherence of indirect excitons in a trap Optics Infobase Conference Papers 0.8
2012 Leonard JR, Remeika M, Kuznetsova YY, High AA, Butov LV, Hanson M, Gossard AC. Transport of indirect excitons in a potential energy gradient Optics Infobase Conference Papers 0.8
2011 Trowbridge CJ, Norman BM, Stephens J, Gossard AC, Awschalom DD, Sih V. Electron spin polarization-based integrated photonic devices. Optics Express. 19: 14845-51. PMID 21934845  0.8
2011 van Weperen I, Armstrong BD, Laird EA, Medford J, Marcus CM, Hanson MP, Gossard AC. Charge-state conditional operation of a spin qubit. Physical Review Letters. 107: 030506. PMID 21838342 DOI: 10.1103/PhysRevLett.107.030506  0.8
2011 Lu H, Burke PG, Gossard AC, Zeng G, Ramu AT, Bahk JH, Bowers JE. Semimetal/semiconductor nanocomposites for thermoelectrics. Advanced Materials (Deerfield Beach, Fla.). 23: 2377-83. PMID 21751469  0.56
2011 Winbow AG, Leonard JR, Remeika M, Kuznetsova YY, High AA, Hammack AT, Butov LV, Wilkes J, Guenther AA, Ivanov AL, Hanson M, Gossard AC. Electrostatic conveyer for excitons. Physical Review Letters. 106: 196806. PMID 21668190 DOI: 10.1103/PhysRevLett.106.196806  0.8
2011 Pernot G, Michel H, Vermeersch B, Burke P, Lu H, Rampnoux JM, Dilhaire S, Ezzahri Y, Gossard A, Shakouri A. Frequency-dependent thermal conductivity in time domain thermoreflectance analysis of thin films Materials Research Society Symposium Proceedings. 1347: 1-7. DOI: 10.1557/opl.2011.1277  0.8
2011 Burke PG, Lu H, Rudawski NG, Stemmer S, Gossard AC, Bahk JH, Bowers JE. Electrical properties of Er-doped In0.53Ga0.47As Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3559480  0.8
2011 Buschbeck J, Kawasaki J, Buehl TE, Gossard AC, Palmstrøm CJ. Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3556973  0.8
2011 Cassels LE, Buehl TE, Burke PG, Palmstrøm CJ, Gossard AC, Pernot G, Shakouri A, Haughn CR, Doty MF, Zide JMO. Growth and characterization of TbAs:GaAs nanocomposites Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3555388  0.8
2011 Buehl TE, Palmstrøm CJ, Gossard AC. Embedded ErAs nanorods on GaAs (n11) substrates by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3549888  0.8
2011 Kawasaki JK, Timm R, Buehl TE, Lundgren E, Mikkelsen A, Gossard AC, Palmstrøm CJ. Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3547713  0.8
2011 Nakamura S, Yamauchi Y, Hashisaka M, Chida K, Kobayashi K, Ono T, Leturcq R, Ensslin K, Saito K, Utsumi Y, Gossard AC. Experimental test of Fluctuation Theorem in a quantum coherent conductor Proceedings of the Ieee 21st International Conference On Noise and Fluctuations, Icnf 2011. 270-274. DOI: 10.1109/ICNF.2011.5994319  0.8
2011 Toledo NG, Cruz SC, Neufeld CJ, Lang JR, Scarpulla MA, Buehl T, Gossard AC, Denbaars SP, Speck JS, Mishra UK. Integrated non-III-nitride/III-nitride tandem solar cell Device Research Conference - Conference Digest, Drc. 265-266. DOI: 10.1109/DRC.2011.5994525  0.8
2011 Carter AD, Law JJM, Lobisser E, Burek GJ, Mitchell WJ, Thibeault BJ, Gossard AC, Rodwell MJW. 60 nm gate length Al2O3 / In0.53Ga 0.47As gate-first MOSFETs using InAs raised source-drain regrowth Device Research Conference - Conference Digest, Drc. 19-20. DOI: 10.1109/DRC.2011.5994402  0.8
2011 Dovzhenko Y, Stehlik J, Petersson KD, Petta JR, Lu H, Gossard AC. Nonadiabatic quantum control of a semiconductor charge qubit Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/PhysRevB.84.161302  0.8
2011 Sciambi A, Pelliccione M, Lilly MP, Bank SR, Gossard AC, Pfeiffer LN, West KW, Goldhaber-Gordon D. Vertical field-effect transistor based on wave-function extension Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/PhysRevB.84.085301  0.8
2011 Nakamura S, Yamauchi Y, Hashisaka M, Chida K, Kobayashi K, Ono T, Leturcq R, Ensslin K, Saito K, Utsumi Y, Gossard AC. Fluctuation theorem and microreversibility in a quantum coherent conductor Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/PhysRevB.83.155431  0.8
2011 Preu S, Dhler GH, Malzer S, Wang LJ, Gossard AC. Tunable, continuous-wave Terahertz photomixer sources and applications Journal of Applied Physics. 109. DOI: 10.1063/1.3552291  0.8
2011 Liu X, Ramu AT, Bowers JE, Palmstrøm CJ, Burke PG, Lu H, Gossard AC. Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectric applications Journal of Crystal Growth. 316: 56-59. DOI: 10.1016/j.jcrysgro.2010.09.078  0.8
2011 Preu S, Bauerschmidt S, Malzer S, Döhler GH, Lu H, Gossard AC, Wang LJ. Arrayed telecom-wavelength compatible THz n-i-pn-i-p superlattice photomixers for spectroscopy applications Nato Science For Peace and Security Series B: Physics and Biophysics. 139-146. DOI: 10.1007/978-94-007-0769-6-20  0.8
2010 Barthel C, Medford J, Marcus CM, Hanson MP, Gossard AC. Interlaced dynamical decoupling and coherent operation of a singlet-triplet qubit. Physical Review Letters. 105: 266808. PMID 21231704 DOI: 10.1103/PhysRevLett.105.266808  0.8
2010 Reilly DJ, Taylor JM, Petta JR, Marcus CM, Hanson MP, Gossard AC. Exchange control of nuclear spin diffusion in a double quantum dot. Physical Review Letters. 104: 236802. PMID 20867261 DOI: 10.1103/PhysRevLett.104.236802  0.8
2010 Zhao Z, Schwagmann A, Ospald F, Driscoll DC, Lu H, Gossard AC, Smet JH. Thickness dependence of the terahertz response in (110)-oriented GaAs crystals for electro-optic sampling at 1.55 microm. Optics Express. 18: 15956-63. PMID 20720979  0.8
2010 Kuznetsova YY, Remeika M, High AA, Hammack AT, Butov LV, Hanson M, Gossard AC. All-optical excitonic transistor. Optics Letters. 35: 1587-9. PMID 20479817 DOI: 10.1364/OL.35.001587  0.8
2010 Nakamura S, Yamauchi Y, Hashisaka M, Chida K, Kobayashi K, Ono T, Leturcq R, Ensslin K, Saito K, Utsumi Y, Gossard AC. Nonequilibrium fluctuation relations in a quantum coherent conductor. Physical Review Letters. 104: 080602. PMID 20366923 DOI: 10.1103/PhysRevLett.104.080602  0.8
2010 Zhao Z, Schwagmann A, Ospald F, Driscoll DC, Lu H, Gossard AC, Smet JH. Thickness dependence of the terahertz response in 〈110〉-oriented GaAs crystals for electro-optic sampling at 1.55 μm Optics Express. 18: 15956-15963. DOI: 10.1364/OE.18.015956  0.8
2010 Petta JR, Lu H, Gossard AC. A coherent beam splitter for electronic spin states Science. 327: 669-672. DOI: 10.1126/science.1183628  0.8
2010 Bauerschmidt S, Preu S, Malzer S, Döhler GH, Wang LJ, Lu H, Gossard AC. Continuous wave terahertz emitter arrays for spectroscopy and imaging applications Proceedings of Spie - the International Society For Optical Engineering. 7671. DOI: 10.1117/12.850090  0.8
2010 Zide JMO, Lu H, Onishi T, Schroeder JL, Bowers JE, Kobayashi NP, Sands TD, Gossard AC, Shakouri A. Novel metal/semiconductor nanocomposite and superlattice materials and devices for thermoelectrics Proceedings of Spie - the International Society For Optical Engineering. 7683. DOI: 10.1117/12.850058  0.8
2010 Baraskar A, Wistey MA, Jain V, Lobisser E, Singisetti U, Burek G, Lee YJ, Thibeault B, Gossard A, Rodwell M. Ex situ Ohmic contacts to n-InGaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C5l7-C5l9. DOI: 10.1116/1.3454372  0.8
2010 Xu D, Feser JP, Zhao Y, Lu H, Burke P, Gossard AC, Majumdar A. Thermal conductivity characterization and modeling of p-type metal/semiconductor nanocomposites 2010 14th International Heat Transfer Conference, Ihtc 14. 6: 525-529. DOI: 10.1115/IHTC14-23298  0.8
2010 Zhao ZY, Schwagmann A, Ospald F, Von Klitzing K, Smet JH, Driscoll DC, Hanson MP, Lu H, Gossard AC. 1.55 μm photoconductive THz emitters based on ErAs:In 0.53Ga0.47As superlattices 2010 Ieee Photonics Society Winter Topicals Meeting Series, Wtm 2010. 44-45. DOI: 10.1109/PHOTWTM.2010.5421971  0.8
2010 Rodwell MJW, Singisetti U, Wistey M, Burek GJ, Carter A, Baraskar A, Law J, Thibeault BJ, Kim EJ, Shin B, Lee YJ, Steiger S, Lee S, Ryu H, Tan Y, ... ... Gossard AC, et al. III-V MOSFETs: Scaling laws, scaling limits, fabrication processes Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 25-30. DOI: 10.1109/ICIPRM.2010.5515914  0.8
2010 Petersson KD, Petta JR, Lu H, Gossard AC. Quantum coherence in a one-electron semiconductor charge qubit Physical Review Letters. 105. DOI: 10.1103/PhysRevLett.105.246804  0.8
2010 Russell KJ, Capasso F, Narayanamurti V, Lu H, Zide JMO, Gossard AC. Scattering-assisted tunneling: Energy dependence, magnetic field dependence, and use as an external probe of two-dimensional transport Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/PhysRevB.82.115322  0.8
2010 Norman BM, Trowbridge CJ, Stephens J, Gossard AC, Awschalom DD, Sih V. Mapping spin-orbit splitting in strained (In,Ga)As epilayers Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/PhysRevB.82.081304  0.8
2010 Laird EA, Taylor JM, Divincenzo DP, Marcus CM, Hanson MP, Gossard AC. Coherent spin manipulation in an exchange-only qubit Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/PhysRevB.82.075403  0.8
2010 Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC. Probing semiconductor band structures and heterojunction interface properties with ballistic carrier emission: GaAs/ Alx Ga 1-x As as a model system Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/PhysRevB.81.235325  0.8
2010 Bahk JH, Bian Z, Zebarjadi M, Zide JMO, Lu H, Xu D, Feser JP, Zeng G, Majumdar A, Gossard AC, Shakouri A, Bowers JE. Thermoelectric figure of merit of ( In0.53 Ga0.47 As )0.8 ( In0.52 Al0.48 As ) 0.2 III-V semiconductor alloys Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/PhysRevB.81.235209  0.8
2010 Barthel C, Kjærgaard M, Medford J, Stopa M, Marcus CM, Hanson MP, Gossard AC. Fast sensing of double-dot charge arrangement and spin state with a radio-frequency sensor quantum dot Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/PhysRevB.81.161308  0.8
2010 Yang S, Butov LV, Levitov LS, Simons BD, Gossard AC. Exciton front propagation in photoexcited GaAs quantum wells Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/PhysRevB.81.115320  0.8
2010 Wilkes J, Mouchliadis L, Muljarov EA, Ivanov AL, Hammack AT, Butov LV, Gossard AC. Dynamics of the inner ring in photoluminescence of GaAs/AlGaAs indirect excitons Journal of Physics: Conference Series. 210. DOI: 10.1088/1742-6596/210/1/012050  0.8
2010 Preu S, Malzer S, Döhler GH, Lu H, Gossard AC, Wang LJ. Efficient III-V tunneling diodes with ErAs recombination centers Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/11/115004  0.8
2010 Zide JMO, Bahk JH, Singh R, Zebarjadi M, Zeng G, Lu H, Feser JP, Xu D, Singer SL, Bian ZX, Majumdar A, Bowers JE, Shakouri A, Gossard AC. High efficiency semimetal/semiconductor nanocomposite thermoelectric materials Journal of Applied Physics. 108. DOI: 10.1063/1.3514145  0.8
2010 Sciambi A, Pelliccione M, Bank SR, Gossard AC, Goldhaber-Gordon D. Virtual scanning tunneling microscopy: A local spectroscopic probe of two-dimensional electron systems Applied Physics Letters. 97. DOI: 10.1063/1.3492440  0.8
2010 Schwagmann A, Zhao ZY, Ospald F, Lu H, Driscoll DC, Hanson MP, Gossard AC, Smet JH. Terahertz emission characteristics of ErAs:InGaAs-based photoconductive antennas excited at 1.55 μm Applied Physics Letters. 96. DOI: 10.1063/1.3374401  0.8
2010 Buehl TE, Lebeau JM, Stemmer S, Scarpulla MA, Palmstrøm CJ, Gossard AC. Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy Journal of Crystal Growth. 312: 2089-2092. DOI: 10.1016/j.jcrysgro.2010.04.031  0.8
2010 Bahk JH, Zeng G, Zide JMO, Lu H, Singh R, Liang D, Ramu AT, Burke P, Bian Z, Gossard AC, Shakouri A, Bowers JE. High-temperature thermoelectric characterization of III-V semiconductor thin films by oxide bonding Journal of Electronic Materials. 39: 1125-1132. DOI: 10.1007/s11664-010-1258-5  0.8
2010 Grosso G, Graves JC, Hammack AT, High AA, Butov LV, Hanson M, Gossard AC. Excitonic switches operating at around 100 K Optics Infobase Conference Papers 0.8
2010 Kuznetsova YY, Remeika M, High AA, Hammack AT, Butov LV, Hanson M, Gossard AC. All-optical excitonic switch Optics Infobase Conference Papers 0.8
2010 Hammack AT, Butov LV, Wilkes J, Mouchliadis L, Muljarov EA, Ivanov AL, Gossard AC. Spatially resolved kinetics and spatially separated pump-probe studies of transport and thermalization of indirect excitons Optics Infobase Conference Papers 0.8
2010 Grosso G, Graves JC, Hammack AT, High AA, Butov LV, Hanson M, Gossard AC. Excitonic switches operating at around 100 K Optics Infobase Conference Papers 0.8
2010 Hammack AT, Butov LV, Wilkes J, Mouchliadis L, Muljarov EA, Ivanov AL, Gossard AC. Spatially resolved kinetics and spatially separated pump-probe studies of transport and thermalization of indirect excitons Optics Infobase Conference Papers 0.8
2010 Kuznetsova YY, Remeika M, High AA, Hammack AT, Butov LV, Hanson M, Gossard AC. All-optical excitonic switch Optics Infobase Conference Papers 0.8
2009 Barthel C, Reilly DJ, Marcus CM, Hanson MP, Gossard AC. Rapid single-shot measurement of a singlet-triplet qubit. Physical Review Letters. 103: 160503. PMID 19905680 DOI: 10.1103/PhysRevLett.103.160503  0.8
2009 Williams KK, Taylor ZD, Suen JY, Lu H, Singh RS, Gossard AC, Brown ER. Toward a 1550 nm InGaAs photoconductive switch for terahertz generation. Optics Letters. 34: 3068-70. PMID 19838228  0.8
2009 High AA, Thomas AK, Grosso G, Remeika M, Hammack AT, Meyertholen AD, Fogler MM, Butov LV, Hanson M, Gossard AC. Trapping indirect excitons in a GaAs quantum-well structure with a diamond-shaped electrostatic trap. Physical Review Letters. 103: 087403. PMID 19792761 DOI: 10.1103/PhysRevLett.103.087403  0.8
2009 Leonard JR, Kuznetsova YY, Yang S, Butov LV, Ostatnický T, Kavokin A, Gossard AC. Spin transport of excitons. Nano Letters. 9: 4204-8. PMID 19780583 DOI: 10.1021/nl9024227  0.8
2009 Wistey MA, Singisetti U, Burek GJ, Kim E, Thibeault BJ, Nelson A, Cagnon J, Lee YJ, Bank SR, Stemmer S, McIntyre PC, Gossard AC, Rodwell MJW. III-V/Ge channel engineering for future CMOS Ecs Transactions. 19: 361-372. DOI: 10.1149/1.3119559  0.8
2009 Baraskar AK, Wistey MA, Jain V, Singisetti U, Burek G, Thibeault BJ, Lee YJ, Gossard AC, Rodwell MJW. Ultralow resistance, nonalloyed Ohmic contacts to n-InGaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2036-2039. DOI: 10.1116/1.3182737  0.8
2009 Bauerschmidt S, Preu S, Malzer S, Döhler GH, Wang L, Lu H, Gossard AC. Coherent superposition of terahertz beams from a phased linear photomixer array Proceedings - Tera-Mir 2009, Nato Advanced Research Workshop Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications. 75-76. DOI: 10.1109/TERAMIR.2009.5379620  0.8
2009 Preu S, Malzer S, Döhler GH, Wang L, Lu H, Gossard AC. Telecom-wavelength compatible THz n-i-pn-i-p superlattice photomixers for spectroscopical applications Proceedings - Tera-Mir 2009, Nato Advanced Research Workshop Terahertz and Mid Infrared Radiation: Basic Research and Practical Applications. 81-82. DOI: 10.1109/TERAMIR.2009.5379619  0.8
2009 Singisetti U, Wistey MA, Burek GJ, Baraskar AK, Thibeault BJ, Gossard AC, Rodwell MJW, Shin B, Kim EJ, McIntyre PC, Yu B, Yuan Y, Wang D, Taur Y, Asbeck P, et al. In0.53Ga0.47As Channel MOSFETs with self-aligned InAs source/drain formed by MEE regrowth Ieee Electron Device Letters. 30: 1128-1130. DOI: 10.1109/LED.2009.2031304  0.8
2009 Jain V, Baraskar AK, Wistey MA, Singisetti U, Griffith Z, Lobisser E, Thibeault BJ, Gossard AC, Rodwell MJW. Effect of surface preparations on contact resistivity of TiW to highly doped n-InGaAs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 358-361. DOI: 10.1109/ICIPRM.2009.5012438  0.8
2009 Singisetti U, Wistey MA, Burek GJ, Baraskar AK, Cagnon J, Thibeault BJ, Stemmer S, Gossard AC, Rodwell MJW, Kim E, Shin B, McIntyre PC, Lee YJ. 37 mS/μm In0.53Ga0.47as MOSFET with 5 nm channel and self-aligned epitaxial raised source/drain Device Research Conference - Conference Digest, Drc. 253-254. DOI: 10.1109/DRC.2009.5354901  0.8
2009 Hammack AT, Butov LV, Wilkes J, Mouchliadis L, Muljarov EA, Ivanov AL, Gossard AC. Kinetics of the inner ring in the exciton emission pattern in coupled GaAs quantum wells Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/PhysRevB.80.155331  0.8
2009 Yamauchi Y, Hashisaka M, Nakamura S, Chida K, Kasai S, Ono T, Leturcq R, Ensslin K, Driscoll DC, Gossard AC, Kobayashi K. Non-equilibrium dephasing in ballistic interferometers Journal of Physics: Conference Series. 193. DOI: 10.1088/1742-6596/193/1/012045  0.8
2009 Yi W, Narayanamurti V, Lu H, Scarpulla MA, Gossard AC, Huang Y, Ryou JH, Dupuis RD. Bandgap and band offsets determination of semiconductor heterostructures using three-terminal ballistic carrier spectroscopy Applied Physics Letters. 95. DOI: 10.1063/1.3224914  0.8
2009 Azad AK, Chen HT, Kasarla SR, Taylor AJ, Tian Z, Lu X, Zhang W, Lu H, Gossard AC, O'Hara JF. Ultrafast optical control of terahertz surface plasmons in subwavelength hole arrays at room temperature Applied Physics Letters. 95. DOI: 10.1063/1.3168510  0.8
2009 Singh R, Bian Z, Shakouri A, Zeng G, Bahk JH, Bowers JE, Zide JMO, Gossard AC. Direct measurement of thin-film thermoelectric figure of merit Applied Physics Letters. 94. DOI: 10.1063/1.3094880  0.8
2009 Koh YK, Singer SL, Kim W, Zide JMO, Lu H, Cahill DG, Majumdar A, Gossard AC. Comparison of the 3ω method and time-domain thermoreflectance for measurements of the cross-plane thermal conductivity of epitaxial semiconductors Journal of Applied Physics. 105. DOI: 10.1063/1.3078808  0.8
2009 Grosso G, Graves J, Hammack AT, High AA, Butov LV, Hanson M, Gossard AC. Excitonic switches operating at around 100K Nature Photonics. 3: 577-580. DOI: 10.1038/nphoton.2009.166  0.8
2009 Singisetti U, Wistey MA, Burek GJ, Arkun E, Baraskar AK, Sun Y, Kiewra EW, Thibeault BJ, Gossard AC, Palmstrøm CJ, Rodwell MJW. InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology Physica Status Solidi (C) Current Topics in Solid State Physics. 6: 1394-1398. DOI: 10.1002/pssc.200881532  0.8
2009 Zeng G, Bahk JH, Ramu AT, Bowers JE, Lu H, Gossard AC, Bian Z, Zebarjadi M, Shakouri A. 6 watt segmented power generator modules using Bi2Te3 and (InGaAs)1-x(InAIAs)x elements embedded with ErAs nanoparticles Materials Research Society Symposium Proceedings. 1129: 97-102.  0.8
2009 Hammack AT, Yang S, Butov LV, Gossard AC. Properties of the exciton inner ring at ultra-low temperatures and high magnetic fields 2009 Conference On Lasers and Electro-Optics and 2009 Conference On Quantum Electronics and Laser Science Conference, Cleo/Qels 2009 0.8
2009 Leonard JR, Yang S, Butov LV, Gossard AC. Spin transport of indirect excitons in GaAs/AlGaAs coupled quantum wells 2009 Conference On Lasers and Electro-Optics and 2009 Conference On Quantum Electronics and Laser Science Conference, Cleo/Qels 2009 0.8
2009 High AA, Thomas AK, Hammack AT, Butov LV, Hanson M, Gossard AC. A diamond trap for indirect excitons in coupled quantum wells 2009 Conference On Lasers and Electro-Optics and 2009 Conference On Quantum Electronics and Laser Science Conference, Cleo/Qels 2009 0.8
2008 Reilly DJ, Taylor JM, Laird EA, Petta JR, Marcus CM, Hanson MP, Gossard AC. Measurement of temporal correlations of the overhauser field in a double quantum dot. Physical Review Letters. 101: 236803. PMID 19113577 DOI: 10.1103/PhysRevLett.101.236803  0.8
2008 Reilly DJ, Taylor JM, Petta JR, Marcus CM, Hanson MP, Gossard AC. Suppressing spin qubit dephasing by nuclear state preparation. Science (New York, N.Y.). 321: 817-21. PMID 18687959 DOI: 10.1126/science.1159221  0.8
2008 High AA, Novitskaya EE, Butov LV, Hanson M, Gossard AC. Control of exciton fluxes in an excitonic integrated circuit. Science (New York, N.Y.). 321: 229-31. PMID 18566248 DOI: 10.1126/science.1157845  0.8
2008 Chen HT, Lu H, Azad AK, Averitt RD, Gossard AC, Trugman SA, O'Hara JF, Taylor AJ. Electronic control of extraordinary terahertz transmission through subwavelength metal hole arrays. Optics Express. 16: 7641-8. PMID 18545471 DOI: 10.1364/OE.16.007641  0.8
2008 Preu S, Schwefel HG, Malzer S, Döhler GH, Wang LJ, Hanson M, Zimmerman JD, Gossard AC. Coupled whispering gallery mode resonators in the Terahertz frequency range. Optics Express. 16: 7336-43. PMID 18545439 DOI: 10.1364/OE.16.007336  0.8
2008 Kim W, Singer SL, Majumdar A, Zide JM, Klenov D, Gossard AC, Stemmer S. Reducing thermal conductivity of crystalline solids at high temperature using embedded nanostructures. Nano Letters. 8: 2097-9. PMID 18507477 DOI: 10.1021/nl080189t  0.8
2008 Petta JR, Taylor JM, Johnson AC, Yacoby A, Lukin MD, Marcus CM, Hanson MP, Gossard AC. Dynamic nuclear polarization with single electron spins. Physical Review Letters. 100: 067601. PMID 18352516 DOI: 10.1103/PhysRevLett.100.067601  0.8
2008 Amasha S, Maclean K, Radu IP, Zumbühl DM, Kastner MA, Hanson MP, Gossard AC. Electrical control of spin relaxation in a quantum dot. Physical Review Letters. 100: 046803. PMID 18352316 DOI: 10.1103/PhysRevLett.100.046803  0.8
2008 Myers RC, Mikkelsen MH, Tang JM, Gossard AC, Flatté ME, Awschalom DD. Zero-field optical manipulation of magnetic ions in semiconductors. Nature Materials. 7: 203-8. PMID 18278049 DOI: 10.1038/nmat2123  0.8
2008 Azad AK, Prasankumar RP, Talbayev D, Taylor AJ, Averitt RD, Zide JMO, Lu H, Gossard AC, O'Hara JF. Carrier dynamics in InGaAs with embedded ErAs nanoislands Applied Physics Letters. 93. DOI: 10.1063/1.2989127  0.8
2008 Winbow AG, Butov LV, Gossard AC. Photon storage with subnanosecond readout rise time in coupled quantum wells Journal of Applied Physics. 104. DOI: 10.1063/1.2978214  0.8
2008 Chen HT, Palit S, Tyler T, Bingham CM, Zide JMO, O'Hara JF, Smith DR, Gossard AC, Averitt RD, Padilla WJ, Jokerst NM, Taylor AJ. Hybrid metamaterials enable fast electrical modulation of freely propagating terahertz waves Applied Physics Letters. 93. DOI: 10.1063/1.2978071  0.8
2008 Kim S, Zimmerman JD, Focardi P, Gossard AC, Wu DH, Sherwin MS. Room temperature terahertz detection based on bulk plasmons in antenna-coupled GaAs field effect transistors Applied Physics Letters. 92. DOI: 10.1063/1.2947587  0.8
2008 Preu S, Malzer S, Döhler GH, Zhao QZ, Hanson M, Zimmerman JD, Gossard AC, Wang LJ. Interference between two coherently driven monochromatic terahertz sources Applied Physics Letters. 92. DOI: 10.1063/1.2938874  0.8
2008 Scarpulla MA, Zide JMO, LeBeau JM, Van De Walle CG, Gossard AC, Delaney KT. Near-infrared absorption and semimetal-semiconductor transition in 2 nm ErAs nanoparticles embedded in GaAs and AlAs Applied Physics Letters. 92. DOI: 10.1063/1.2908213  0.8
2008 Ospald F, Maryenko D, Von Klitzing K, Driscoll DC, Hanson MP, Lu H, Gossard AC, Smet JH. 1.55 μm ultrafast photoconductive switches based on ErAs:InGaAs Applied Physics Letters. 92. DOI: 10.1063/1.2907335  0.8
2008 Myers RC, Mikkelsen MH, Tang JM, Gossard AC, Flatté ME, Awschalom DD. Zero-field optical manipulation of magnetic ions in semiconductors (Nature Materials (2008) 7 (203-208) ) Nature Materials. 7: 339. DOI: 10.1038/nmat2158  0.8
2007 Laird EA, Barthel C, Rashba EI, Marcus CM, Hanson MP, Gossard AC. Hyperfine-mediated gate-driven electron spin resonance. Physical Review Letters. 99: 246601. PMID 18233467 DOI: 10.1103/PhysRevLett.99.246601  0.8
2007 Zhang Y, DiCarlo L, McClure DT, Yamamoto M, Tarucha S, Marcus CM, Hanson MP, Gossard AC. Noise correlations in a Coulomb-blockaded quantum dot. Physical Review Letters. 99: 036603. PMID 17678305 DOI: 10.1103/PhysRevLett.99.036603  0.8
2007 Chen HT, Padilla WJ, Zide JM, Bank SR, Gossard AC, Taylor AJ, Averitt RD. Ultrafast optical switching of terahertz metamaterials fabricated on ErAs/GaAs nanoisland superlattices. Optics Letters. 32: 1620-2. PMID 17572725  0.8
2007 Winbow AG, Hammack AT, Butov LV, Gossard AC. Photon storage with nanosecond switching in coupled quantum well nanostructures. Nano Letters. 7: 1349-51. PMID 17425373 DOI: 10.1021/nl070386c  0.8
2007 McClure DT, Dicarlo L, Zhang Y, Engel HA, Marcus CM, Hanson MP, Gossard AC. Tunable noise cross correlations in a double quantum dot. Physical Review Letters. 98: 056801. PMID 17358883 DOI: 10.1103/PhysRevLett.98.056801  0.8
2007 MacLean K, Amasha S, Radu IP, Zumbühl DM, Kastner MA, Hanson MP, Gossard AC. Energy-dependent tunneling in a quantum dot. Physical Review Letters. 98: 036802. PMID 17358709 DOI: 10.1103/PhysRevLett.98.036802  0.8
2007 Brown ER, Young AC, Bjarnason JE, Zimmerman JD, Gossard AC, Kazemi H. Millimeter and sub-millimeter wave performance of an ERAS:Inalgaas Schottky diode coupled to a single-turn square spiral International Journal of High Speed Electronics and Systems. 17: 383-394. DOI: 10.1142/S0129156407004576  0.8
2007 Landy NI, Chen HT, O'Hara JF, Zide JMO, Gossard AC, Highstrete C, Lee M, Taylor AJ, Averitt RD, Padilla WJ. Terahertz metamaterials for active, tunable, and dynamical devices Proceedings of Spie - the International Society For Optical Engineering. 6581. DOI: 10.1117/12.724394  0.8
2007 Ezzahri Y, Singh R, Fukutani K, Bian Z, Shakouri A, Zeng G, Bowers JE, Zide JM, Gossard AC. Transient thermal characterization of ErAs/In0.53GA 0.47AS thermoelectric module 2007 Proceedings of the Asme Interpack Conference, Ipack 2007. 2: 277-281. DOI: 10.1115/IPACK2007-33880  0.8
2007 Zeng G, Bahk JH, Bowers JE, Zide JMO, Gossard AC, Bian Z, Singh R, Shakouri A, Kim W, Singer SL, Majumdar A. ErAs: (InGaAs)1-x (InAlAs)x alloy power generator modules Applied Physics Letters. 91. DOI: 10.1063/1.2828042  0.8
2007 Crook AM, Lind E, Griffith Z, Rodwell MJW, Zimmerman JD, Gossard AC, Bank SR. Low resistance, nonalloyed Ohmic contacts to InGaAs Applied Physics Letters. 91. DOI: 10.1063/1.2806235  0.8
2007 Hanson MP, Gossard AC, Brown ER. Infrared surface plasmon resonances due to Er-V semimetallic nanoparticles in III-V semiconductor matrices Journal of Applied Physics. 102. DOI: 10.1063/1.2761846  0.8
2007 Young AC, Zimmerman JD, Brown ER, Gossard AC. Low-frequency noise in epitaxially grown Schottky junctions Journal of Applied Physics. 101. DOI: 10.1063/1.2721774  0.8
2007 Klenov DO, Zide JMO, Lebeau JM, Gossard AC, Stemmer S. Ordering of ErAs nanoparticles embedded in epitaxial InGaAs layers Applied Physics Letters. 90. DOI: 10.1063/1.2715174  0.8
2007 Chen HT, Padilla WJ, Zide JMO, Gossard AC, Taylor AJ, Averitt RD. Electrical control of terahertz metamaterials Optics Infobase Conference Papers 0.8
2006 Chen HT, Padilla WJ, Zide JM, Gossard AC, Taylor AJ, Averitt RD. Active terahertz metamaterial devices. Nature. 444: 597-600. PMID 17136089 DOI: 10.1038/nature05343  0.8
2006 Laird EA, Petta JR, Johnson AC, Marcus CM, Yacoby A, Hanson MP, Gossard AC. Effect of exchange interaction on spin dephasing in a double quantum dot. Physical Review Letters. 97: 056801. PMID 17026127 DOI: 10.1103/PhysRevLett.97.056801  0.8
2006 Zumbühl DM, Marcus CM, Hanson MP, Gossard AC. Asymmetry of nonlinear transport and electron interactions in quantum dots. Physical Review Letters. 96: 206802. PMID 16803193 DOI: 10.1103/PhysRevLett.96.206802  0.8
2006 Taylor ZD, Brown ER, Bjarnason JE, Hanson MP, Gossard AC. Resonant-optical-cavity photoconductive switch with 0.5% conversion efficiency and 1.0 W peak power. Optics Letters. 31: 1729-31. PMID 16688276 DOI: 10.1364/OL.31.001729  0.8
2006 Ghosh S, Wang WH, Mendoza FM, Myers RC, Li X, Samarth N, Gossard AC, Awschalom DD. Enhancement of spin coherence using Q-factor engineering in semiconductor microdisc lasers. Nature Materials. 5: 261-4. PMID 16565713 DOI: 10.1038/nmat1587  0.8
2006 Brown ER, Kazemi H, Young AC, Zimmerman JD, Wilkinson TLJ, Bjarnason JE, Hacker JB, Gossard AC. High-sensitivity, quasi-optically-coupled semimetal-semiconductor detectors at 104 GHz Proceedings of Spie - the International Society For Optical Engineering. 6212. DOI: 10.1117/12.666473  0.8
2006 Zimmerman JD, Gossard AC, Young AC, Miller MP, Brown ER. ErAs island-stacking growth technique for engineering textured Schottky interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 1483-1487. DOI: 10.1116/1.2203642  0.8
2006 O'Hara JF, Taylor AJ, Averitt RD, Zide JM, Gossard AC. Enhanced terahertz detection via ErAs:GaAs nanoisland superlattices Conference On Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, Cleo/Qels 2006. DOI: 10.1109/CLEO.2006.4628238  0.8
2006 Russell KJ, Narayanamurti V, Appelbaum I, Hanson MP, Gossard AC. Hot-electron mean free path of ErAs thin films grown on GaAs determined by metal-base transistor ballistic electron emission spectroscopy Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/PhysRevB.74.205330  0.8
2006 Hanson MP, Gossarw AC, Brown ER. ErAs as a transparent contact at 1.55 μm Applied Physics Letters. 89. DOI: 10.1063/1.2354038  0.68
2006 Yi W, Appelbaum I, Russell KJ, Narayanamurti V, Schalek R, Hanson MP, Gossard AC. Vertically integrated optics for ballistic electron emission luminescence: Device and microscopy characterizations Journal of Applied Physics. 100. DOI: 10.1063/1.2208738  0.8
2006 Young AC, Zimmerman JD, Brown ER, Gossard AC. 1/f noise in all-epitaxial metal-semiconductor diodes Applied Physics Letters. 88. DOI: 10.1063/1.2174837  0.8
2005 Heller EJ, Aidala KE, LeRoy BJ, Bleszynski AC, Kalben A, Westervelt RM, Maranowski KD, Gossard AC. Thermal averages in a quantum point contact with a single coherent wave packet. Nano Letters. 5: 1285-92. PMID 16178225 DOI: 10.1021/nl0504585  0.8
2005 Petta JR, Johnson AC, Taylor JM, Laird EA, Yacoby A, Lukin MD, Marcus CM, Hanson MP, Gossard AC. Coherent manipulation of coupled electron spins in semiconductor quantum dots. Science (New York, N.Y.). 309: 2180-4. PMID 16141370 DOI: 10.1126/science.1116955  0.8
2005 Johnson AC, Petta JR, Taylor JM, Yacoby A, Lukin MD, Marcus CM, Hanson MP, Gossard AC. Triplet-singlet spin relaxation via nuclei in a double quantum dot. Nature. 435: 925-8. PMID 15944715 DOI: 10.1038/nature03815  0.8
2005 LeRoy BJ, Bleszynski AC, Aidala KE, Westervelt RM, Kalben A, Heller EJ, Shaw SE, Maranowski KD, Gossard AC. Imaging electron interferometer. Physical Review Letters. 94: 126801. PMID 15903945 DOI: 10.1063/1.1994666  0.8
2005 Fallahi P, Bleszynski AC, Westervelt RM, Huang J, Walls JD, Heller EJ, Hanson M, Gossard AC. Imaging a single-electron quantum dot. Nano Letters. 5: 223-6. PMID 15794600 DOI: 10.1021/nl048405v  0.8
2005 Kazemi H, Zimmerman JD, Brown ER, Gossard AC, Boreman GD, Hacker JB, Lail B, Middleton C. First MMW characterization of ErAs/InAlGaAs/InP Semimetal-Semiconductor- Schottky diode (S 3) detectors for passive millimeter-wave and infrared imaging Proceedings of Spie - the International Society For Optical Engineering. 5789: 80-83. DOI: 10.1117/12.604118  0.8
2005 Kadow C, Gossard AC, Rodwell MJW. Regrown-emitter InP heterojunction bisucpolar transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1140-1143. DOI: 10.1116/1.1885014  0.8
2005 Young AC, Zimmerman JD, Brown ER, Gossard AC. Semimetal-semiconductor junctions for low noise zero-bias rectifiers Ieee Mtt-S International Microwave Symposium Digest. 2005: 447-450. DOI: 10.1109/MWSYM.2005.1516625  0.8
2005 Russell KJ, Appelbaum I, Narayanamurti V, Hanson MP, Gossard AC. Transverse momentum nonconservation at the ErAs/GaAs interface Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/PhysRevB.71.121311  0.8
2005 Young AC, Zimmerman JD, Brown ER, Gossard AC. Semimetal-semiconductor rectifiers for sensitive room-temperature microwave detectors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2112201  0.8
2005 Zide JM, Klenov DO, Stemmer S, Gossard AC, Zeng G, Bowers JE, Vashaee D, Shakouri A. Thermoelectric power factor in semiconductors with buried epitaxial semimetallic nanoparticles Applied Physics Letters. 87. DOI: 10.1063/1.2043241  0.8
2005 Hanson MP, Driscoll DC, Brown ER, Gossard AC. Strong sub-bandgap absorption in GaSb/ErSb nanocomposites attributed to plasma resonances of semimetallic ErSb nanoparticles Aip Conference Proceedings. 772: 845-846. DOI: 10.1063/1.1994370  0.8
2005 Prasankumar RP, Scopatz A, Hilton DJ, Taylor AJ, Averitt RD, Zide JM, Gossard AC. Carrier dynamics in self-assembled ErAs nanoislands embedded in GaAs measured by optical-pump terahertz-probe spectroscopy Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1923174  0.8
2005 Klenov DO, Driscoll DC, Gossard AC, Stemmer S. Scanning transmission electron microscopy of ErAs nanoparticles embedded in epitaxial in 0.53Ga 0.47as layers Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1885172  0.8
2005 Appelbaum I, Yi W, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Vertically integrated optics for ballistic electron emission luminescence microscopy Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1861961  0.8
2005 Driscoll DC, Hanson MP, Gossard AC, Brown ER. Ultrafast photoresponse at 1.55 μm in InGaAs with embedded semimetallic ErAs nanoparticles Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1852092  0.8
2005 Lin HK, Kadow C, Bae JU, Rodwell MJW, Gossard AC, Brar B, Sullivan G, Nagy G, Bergman J. Design and characteristics of strained InAs/InAlAs composite-channel heterostructure field-effect transistors Journal of Applied Physics. 97. DOI: 10.1063/1.1831545  0.8
2005 Driscoll DC, Hanson MP, Gossard AC. Carrier compensation in semiconductors with buried metallic nanoparticles Journal of Applied Physics. 97. DOI: 10.1063/1.1808473  0.8
2005 Wang CS, Koda R, Huntington AS, Gossard AC, Coldren LA. >100% output differential efficiency 1.55-μm VCSELs using submonolayer superlattices digital-alloy multiple-active-regions grown by MBE on InP Journal of Crystal Growth. 277: 13-20. DOI: 10.1016/j.jcrysgro.2004.12.139  0.8
2005 Brown ER, Bjarnason JE, Wilkinson TLJ, Driscoll DC, Hanson M, Gossard AC. Bright MM-wave and THz luminescence by down-conversion of near-IR amplified-spontaneous-emission International Journal of Infrared and Millimeter Waves. 26: 1691-1702. DOI: 10.1007/s10762-005-0290-7  0.8
2004 Zumbühl DM, Marcus CM, Hanson MP, Gossard AC. Cotunneling spectroscopy in few-electron quantum dots. Physical Review Letters. 93: 256801. PMID 15697924 DOI: 10.1103/PhysRevLett.93.256801  0.8
2004 Petta JR, Johnson AC, Marcus CM, Hanson MP, Gossard AC. Manipulation of a single charge in a double quantum dot. Physical Review Letters. 93: 186802. PMID 15525191 DOI: 10.1103/PhysRevLett.93.186802  0.8
2004 Johnson AC, Marcus CM, Hanson MP, Gossard AC. Coulomb-modified Fano resonance in a one-lead quantum dot. Physical Review Letters. 93: 106803. PMID 15447436 DOI: 10.1103/PhysRevLett.93.106803  0.8
2004 DiCarlo L, Lynch HJ, Johnson AC, Childress LI, Crockett K, Marcus CM, Hanson MP, Gossard AC. Differential charge sensing and charge delocalization in a tunable double quantum dot. Physical Review Letters. 92: 226801. PMID 15245249 DOI: 10.1103/PhysRevLett.92.226801  0.8
2004 Craig NJ, Taylor JM, Lester EA, Marcus CM, Hanson MP, Gossard AC. Tunable nonlocal spin control in a coupled-quantum dot system. Science (New York, N.Y.). 304: 565-7. PMID 15044752 DOI: 10.1126/science.1095452  0.8
2004 Russell KJ, Appelbaum I, Yi W, Monsma DJ, Capasso F, Marcus CM, Narayanamurti V, Hanson MP, Gossard AC. Avalanche spin-valve transistor Applied Physics Letters. 85: 4502-4504. DOI: 10.1063/1.1818339  0.8
2004 Bjarnason JE, Chan TLJ, Lee AWM, Brown ER, Driscoll DC, Hanson M, Gossard AC, Muller RE. ErAs:GaAs photomixer with two-decade tunability and 12 μW peak output power Applied Physics Letters. 85: 3983-3985. DOI: 10.1063/1.1813635  0.8
2004 Hanson MP, Driscoll DC, Zimmerman JD, Gossard AC, Brown ER. Subplcosecond photocarrier lifetimes in GaSb/ErSb nanoparticle superlattices at 1.55 μm Applied Physics Letters. 85: 3110-3112. DOI: 10.1063/1.1805711  0.8
2004 Appelbaum I, Russell KJ, Shalish I, Narayanamurti V, Hanson MP, Gossard AC. Ballistic hole emission luminescence Applied Physics Letters. 85: 2265-2267. DOI: 10.1063/1.1793347  0.8
2004 Yi W, Appelbaum I, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Ballistic electron emission luminescence spectroscopy of an InAs quantum dot heterostructure Applied Physics Letters. 85: 1990-1992. DOI: 10.1063/1.1790595  0.8
2004 Schuller JA, Johnston-Halperin E, Gallinat CS, Knotz H, Gossard AC, Awschalom DD. Structural engineering of ferromagnetism in III-V digital ferromagnetic heterostructures Journal of Applied Physics. 95: 4922-4927. DOI: 10.1063/1.1667594  0.8
2004 Carter SG, Ciulin V, Sherwin MS, Hanson M, Huntington A, Coldren LA, Gossard AC. Terahertz electro-optic wavelength conversion in GaAs quantum wells: Improved efficiency and room-temperature operation Applied Physics Letters. 84: 840-842. DOI: 10.1063/1.1645662  0.8
2004 Appelbaum I, Russell KJ, Kozhevnikov M, Narayanamurti V, Hanson MP, Gossard AC. Room-temperature ballistic electron emission luminescence spectroscopy with a scanning tunneling microscope Applied Physics Letters. 84: 547-549. DOI: 10.1063/1.1644329  0.8
2004 Lin HK, Kadow C, Dahlström M, Bae JU, Rodwell MJW, Gossard AC, Brar B, Sullivan G, Nagy G, Bergman J. InAs/InAsP composite channels for antimonide-based field-effect transistors Applied Physics Letters. 84: 437-439. DOI: 10.1063/1.1642275  0.8
2004 Hanson MP, Driscoll DC, Kadow C, Gossard AC. Metal/semiconductor superlattices containing semimetallic ErSb nanoparticles in GaSb Applied Physics Letters. 84: 221-223. DOI: 10.1063/1.1639932  0.8
2004 Wei Y, Appelbaum I, Russell KJ, Narayanamurti V, Hanson MP, Gossard AC. Ballistic electron emission luminescence of InAs quantum dots embedded in a GaAs/AlxGa1-xAs heterostructure Materials Research Society Symposium Proceedings. 838: 170-175. DOI: 10.1063/1.1584524  0.8
2004 Westervelt RM, Topinka MA, LeRoy BJ, Bleszynski AC, Aidala K, Shaw SEJ, Heller EJ, Maranowski KD, Gossard AC. Imaging electron waves Physica E: Low-Dimensional Systems and Nanostructures. 24: 63-69. DOI: 10.1016/j.physe.2004.04.025  0.8
2003 Brown ER, Bacher A, Driscoll D, Hanson M, Kadow C, Gossard AC. Evidence for a strong surface-plasmon resonance on ErAs nanoparticles in GaAs. Physical Review Letters. 90: 077403. PMID 12633271 DOI: 10.1103/PhysRevLett.90.077403  0.8
2003 Griebel M, Smet JH, Driscoll DC, Kuhl J, Diez CA, Freytag N, Kadow C, Gossard AC, Von Klitzing K. Tunable subpicosecond optoelectronic transduction in superlattices of self-assembled ErAs nanoislands. Nature Materials. 2: 122-6. PMID 12612698 DOI: 10.1038/nmat819  0.8
2003 Appelbaum I, Russell KJ, Monsma DJ, Narayanamurti V, Marcus CM, Hanson MP, Gossard AC. Luminescent spin-valve transistor Applied Physics Letters. 83: 4571-4573. DOI: 10.1063/1.1630838  0.8
2003 Griebel M, Smet JH, Kuhl J, Von Klitzing K, Driscoll DC, Kadow C, Gossard AC. Picosecond sampling with fiber-illuminated ErAs:GaAs photoconductive switches in a strong magnetic field and a cryogenic environment Applied Physics Letters. 82: 3179-3181. DOI: 10.1063/1.1573367  0.8
2003 Russella KJ, Appelbaum I, Temkin H, Perry CH, Narayanamurti V, Hanson MP, Gossard AC. Room-temperature electro-optic up-conversion via internal photoemission Applied Physics Letters. 82: 2960-2962. DOI: 10.1063/1.1571981  0.8
2003 Ku KC, Potashnik SJ, Wang RF, Chun SH, Schiffer P, Samarth N, Seong MJ, Mascarenhas A, Johnston-Halperin E, Myers RC, Gossard AC, Awschalom DD. Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers Applied Physics Letters. 82: 2302-2304. DOI: 10.1063/1.1564285  0.8
2003 Kadow C, Lin HK, Dahlström M, Rodwell M, Gossard AC, Brar B, Sullivan G. Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wells Journal of Crystal Growth. 251: 543-546. DOI: 10.1016/S0022-0248(02)02447-8  0.8
2002 Griebel M, Smet JH, Kuhl J, Driscoll D, Kadow C, Von Klitzing K, Gossard AC. Diffusion-controlled picosecond carrier dynamics in ErAs:GaAs superlattices Proceedings of Spie - the International Society For Optical Engineering. 4643: 56-61. DOI: 10.1117/12.470436  0.8
2002 Cleland AN, Aldridge JS, Driscoll DC, Gossard AC. Nanomechanical displacement sensing using a quantum point contact Applied Physics Letters. 81: 1699-1701. DOI: 10.1063/1.1497436  0.8
2001 Williams JB, Sherwin MS, Maranowski KD, Gossard AC. Dissipation of intersubband plasmons in wide quantum wells. Physical Review Letters. 87: 037401. PMID 11461588 DOI: 10.1103/PhysRevLett.87.037401  0.8
2001 Harris JG, Knobel R, Maranowski KD, Gossard AC, Samarth N, Awschalom DD. Magnetization measurements of magnetic two-dimensional electron gases. Physical Review Letters. 86: 4644-7. PMID 11384304 DOI: 10.1103/PhysRevLett.86.4644  0.8
2001 Topinka MA, LeRoy BJ, Westervelt RM, Shaw SE, Fleischmann R, Heller EJ, Maranowski KD, Gossard AC. Coherent branched flow in a two-dimensional electron gas. Nature. 410: 183-6. PMID 11242072 DOI: 10.1038/35065553  0.8
2001 Duffy SM, Verghese S, McIntosh KA, Jackson A, Gossard AC, Matsuura S. Accurate modeling of dual dipole and slot elements used with photomixers for coherent terahertz output power Ieee Transactions On Microwave Theory and Techniques. 49: 1032-1038. DOI: 10.1109/22.925487  0.8
2001 Driscoll DC, Hanson M, Kadow C, Gossard AC. Electronic structure and conduction in a metal-semiconductor digital composite: ErAs:InGaAs Applied Physics Letters. 78: 1703-1705. DOI: 10.1063/1.1355988  0.8
2000 Topinka MA, LeRoy BJ, Shaw SE, Heller EJ, Westervelt RM, Maranowski KD, Gossard AC. Imaging coherent electron flow from a quantum point contact Science (New York, N.Y.). 289: 2323-6. PMID 11009412 DOI: 10.1126/science.289.5488.2323  0.8
2000 Kadow C, Jackson AW, Gossard AC, Bowers JE, Matsuura S, Blake GA. Self-assembled ErAs islands in GaAs for THz applications Physica E: Low-Dimensional Systems and Nanostructures. 7: 97-100. DOI: 10.1016/S1386-9477(99)00314-8  0.8
2000 Streibl M, Wixforth A, Kotthaus JP, Kadow C, Gossard AC. Imaging of carrier dynamics in semiconductor heterostructures by surface acoustic waves Physica E: Low-Dimensional Systems and Nanostructures. 6: 255-259. DOI: 10.1016/S1386-9477(99)00137-X  0.8
2000 Fromer N, Schüller C, Chemla DS, Maranowski K, Gossard AC. Dephasing in the presence of a two-dimensional electron gas at high magnetic fields Physica E: Low-Dimensional Systems and Nanostructures. 6: 210-213. DOI: 10.1016/S1386-9477(99)00083-1  0.8
2000 Unterrainer K, Kersting R, Bratschitsch R, Strasser G, Heyman JN, Maranowski KD, Gossard AC. Few-cycle THz spectroscopy of nanostructures Physica E: Low-Dimensional Systems and Nanostructures. 7: 693-697. DOI: 10.1016/S1386-9477(00)00039-4  0.8
2000 Hu J, Deng T, Beck RG, Westervelt RM, Maranowski KD, Gossard AC, Whitesides GM. Fabrication of GaAs/AlGaAs high electron mobility transistors with 250 nm gates using conformal phase shift lithography Sensors and Actuators, a: Physical. 86: 122-126. DOI: 10.1016/S0924-4247(00)00435-0  0.8
1999 Streibl M, Wixforth A, Kotthaus JP, Govorov AO, Kadow C, Gossard AC. Imaging of acoustic charge transport in semiconductor heterostructures by surface acoustic waves Applied Physics Letters. 75: 4139-4141. DOI: 10.1063/1.125562  0.8
1998 Shakouri A, Liu B, Kim BG, Abraham P, Jackson AW, Gossard AC, Bowers JE. Wafer-fused optoelectronics for switching Journal of Lightwave Technology. 16: 2236-2242. DOI: 10.1109/50.736590  0.8
1998 Wirth S, Heremans JJ, Von Molnár S, Field M, Campman KL, Gossard AC, Awschalom DD. Magnetic anisotropy in arrays of nanometer-scale iron particles Ieee Transactions On Magnetics. 34: 1105-1107. DOI: 10.1109/20.706382  0.8
1998 Beck RG, Eriksson MA, Topinka MA, Westervelt RM, Maranowski KD, Gossard AC. GaAs/AlGaAs self-sensing cantilevers for low temperature scanning probe microscopy Applied Physics Letters. 73: 1149-1151. DOI: 10.1063/1.122112  0.8
1998 Luyken RJ, Lorke A, Song AM, Streibl M, Kotthaus JP, Kadow C, English JH, Gossard AC. Highly anharmonic potential modulation in lateral superlattices fabricated using epitaxial InGaAs stressors Applied Physics Letters. 73: 1110-1112. DOI: 10.1063/1.122100  0.8
1997 Jackson AW, Pinsukanjana PR, Gossard AC, Coldren LA. In situ monitoring and control for MBE growth of optoelectronic devices Ieee Journal On Selected Topics in Quantum Electronics. 3: 836-844. DOI: 10.1109/2944.640637  0.8
1996 Zeuner S, Keay BJ, Allen SJ, Maranowski KD, Gossard AC, Bhattacharya U, Rodwell MJ. Transition from classical to quantum response in semiconductor superlattices at THz frequncies. Physical Review. B, Condensed Matter. 53: R1717-R1720. PMID 9983689 DOI: 10.1103/PhysRevB.53.R1717  0.6
1996 Beck RG, Eriksson MA, Westervelt RM, Campman KL, Gossard AC. Strain-sensing cryogenic field-effect transistor for integrated strain detection in GaAs/AlGaAs microelectromechanical systems Applied Physics Letters. 68: 3763-3765. DOI: 10.1063/1.115999  0.8
1996 Maranowski KD, Ibbetson JP, Campman KL, Gossard AC. The conduction barrier at the interface between low temperature grown GaAs and undoped GaAs Applied Surface Science. 104: 621-625. DOI: 10.1016/S0169-4332(96)00212-7  0.8
1996 Katine JA, Eriksson MA, Westervelt RM, Campman KL, Gossard AC. Experimental observation of coherent backscattering in open ballistic microstructures Superlattices and Microstructures. 20: 337-341. DOI: 10.1006/spmi.1996.0086  0.8
1996 Eriksson MA, Beck RG, Topinka M, Katine JA, Westervelt RM, Campman KL, Gossard AC. Cryogenic scanning probe characterization of semiconductor nanostructures Applied Physics Letters. 69: 671-673.  0.8
1996 Eriksson MA, Beck RG, Topinka MA, Katine JA, Westervelt RM, Campman KL, Gossard AC. Effect of a charged scanned probe microscope tip on a subsurface electron gas Superlattices and Microstructures. 20: 438-440.  0.8
1995 Keay BJ, Zeuner S, Allen SJ, Maranowski KD, Gossard AC, Bhattacharya U, Rodwell MJ. Dynamic localization, absolute negative conductance, and stimulated, multiphoton emission in sequential resonant tunneling semiconductor superlattices. Physical Review Letters. 75: 4102-4105. PMID 10059815 DOI: 10.1103/PhysRevLett.75.4102  0.8
1994 Asmar NG, Markelz AG, Gwinn EG, Hopkins PF, Gossard AC. D.C. transport in intense, in-plane terahertz electric fields in AlxGa1-xAs heterostructures at 300 K Solid State Electronics. 37: 693-695. DOI: 10.1016/0038-1101(94)90278-X  0.8
1994 Allen SJ, Craig K, Felix CL, Guimarães P, Heyman JN, Kaminski JP, Keay BJ, Markelz AG, Ramian G, Scott JS, Sherwin MS, Campman KL, Hopkins PF, Gossard AC, Chow D, et al. Probing terahertz dynamics in semiconductor nanostructures with the UCSB free-electron lasers Journal of Luminescence. 60: 250-255. DOI: 10.1016/0022-2313(94)90142-2  0.8
1993 Störmer HL, Dingle R, Gossard AC, Wiegmann W, Sturge MD. Two-dimensional electron gas at a semiconductor-semiconductor interface Solid State Communications. 88: 933-937. DOI: 10.1016/0038-1098(93)90272-O  0.8
1993 Ibbetson JP, Speck JS, Nguyen NX, Gossard AC, Mishra UK. The role of microstructure in the electrical properties of GaAs grown at low temperature Journal of Electronic Materials. 22: 1421-1424. DOI: 10.1007/BF02649990  0.8
1993 Markelz AG, Gwinn EG, Sherwin MS, Heyman JN, Nguyen C, Kroemer H, Hopkins PF, Gossard AC. Far-Infrared harmonic generation from semiconductor heterostructures Proceedings of Spie - the International Society For Optical Engineering. 1854: 48-55.  0.8
1992 Thomas M, Dagli N, Waldman J, Gossard A, Yuh E, Gwinn E, Muller R, Maker P. IIB-3 Current Switching and Modulation Based on Electron Interference in Electron Waveguides: A Zero Gap Electron Wave Coupler Ieee Transactions On Electron Devices. 39: 2643-2644. DOI: 10.1109/16.163493  0.8
1989 Jewell JL, McCall SL, Scherer A, Houh HH, Whitaker NA, Gossard AC, English JH. Transverse modes, waveguide dispersion, and 30 ps recovery in submicron GaAs/AlAs microresonators Applied Physics Letters. 55: 22-24. DOI: 10.1063/1.101746  0.8
1989 Jewell JL, McCall SL, Lee YH, Scherer A, Gossard AC, English JH. Lasing characteristics of GaAs microresonators Applied Physics Letters. 54: 1400-1402. DOI: 10.1063/1.100679  0.8
1988 Gammel PL, Bishop DJ, Eisenstein JP, Hall RP, Stormer HL, Gossard AC, English JH. Quantum oscillations in a mechanical resonator containing a two-dimensional electron system Surface Science. 196: 417-421. DOI: 10.1016/0039-6028(88)90720-0  0.8
1987 Boyd GD, Miller DAB, Chemla DS, McCall SL, Gossard AC, English JH. Multiple quantum well reflection modulator Applied Physics Letters. 50: 1119-1121. DOI: 10.1063/1.97935  0.8
1987 Meneńdez J, Pinczuk A, Werder DJ, Gossard AC, English JH, Chiu TH, Tsang WT. Light scattering determination of band offsets in GaAs (AlGa)As and GaSb (AlGa)Sb quantum wells: A comparative study Superlattices and Microstructures. 3: 163-166. DOI: 10.1016/0749-6036(87)90051-6  0.8
1986 Lee YH, Gibbs HM, Jewell JL, Duffy JF, Venkatesan T, Gossard AC, Wiegmann W, English JH. Speed and effectiveness of windowless GaAs étalons as optical logic gates Applied Physics Letters. 49: 486-488. DOI: 10.1063/1.97125  0.8
1984 Miller DA, Chemla DS, Damen TC, Wood TH, Burrus CA, Gossard AC, Wiegmann W. Optical-level shifter and self-linearized optical modulator using a quantum-well self-electro-optic effect device. Optics Letters. 9: 567-9. PMID 19721670 DOI: 10.1364/OL.9.000567  0.8
1984 Tarng SS, Gibbs HM, Jewell JL, Peyghambarian N, Gossard AC, Venkatesan T, Wiegmann W. Use of a diode laser to observe room-temperature, low-power optical bistability in a GaAs-AlGaAs etalon Applied Physics Letters. 44: 360-361. DOI: 10.1063/1.94775  0.8
1984 Störmer HL, Baldwin K, Gossard AC, Wiegmann W. Modulation-doped field-effect transistor based on a two-dimensional hole gas Applied Physics Letters. 44: 1062-1064. DOI: 10.1063/1.94643  0.8
1983 Miller DAB, Chemla DS, Smith PW, Gossard AC, Wiegmann W. Nonlinear optics with a diode-laser light source Optics Letters. 8: 477-479. DOI: 10.1364/OL.8.000477  0.8
1983 Jewell JL, Gibbs HM, Gossard AC, Passner A, Wiegmann W. Fabrication of GaAs bistable optical devices Materials Letters. 1: 148-151. DOI: 10.1016/0167-577X(83)90005-8  0.8
1982 Gibbs HM, Tarng SS, Jewell JL, Weinberger DA, Tai K, Gossard AC, McCall SL, Passner A, Wiegmann W. Room-temperature excitonic optical bistability in a GaAs-GaAlAs superlattice étalon Applied Physics Letters. 41: 221-222. DOI: 10.1063/1.93490  0.8
1982 Jewell JL, Gibbs HM, Tarng SS, Gossard AC, Wiegmann W. Regenerative pulsations from an intrinsic bistable optical device Applied Physics Letters. 40: 291-293. DOI: 10.1063/1.93080  0.8
1982 Tarng SS, Tai K, Jewell JL, Gibbs HM, Gossard AC, McCall SL, Passner A, Venkatesan TNC, Wiegmann W. External off and on switching of a bistable optical device Applied Physics Letters. 40: 205-207. DOI: 10.1063/1.93054  0.8
1979 Stormer HL, Dingle R, Gossard AC, Wiegmann W, Sturge MD. TWO-DIMENSIONAL ELECTRON GAS AT DIFFERENTLY DOPED GaAs-Al//xGa//1// minus //xAs HETEROJUNCTION INTERFACE Journal of Vacuum Science &Amp; Technology. 16: 1517-1519. DOI: 10.1116/1.570238  0.8
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