Christoph Kadow, Ph.D. - Publications

Affiliations: 
2000 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Condensed Matter Physics

28 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2006 Parthasarathy N, Griffith Z, Kadow C, Singisetti U, Rodwell MJW, Fang XM, Loubychev D, Wu Y, Fastenau JM, Liu AWK. Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process Ieee Electron Device Letters. 27: 313-316. DOI: 10.1109/Led.2006.872836  0.306
2006 Gelfand IJ, Amasha S, Zumbühl DM, Kastner MA, Kadow C, Gossard AC. Surface-gated quantum hall effect in an inas heterostructure Applied Physics Letters. 88. DOI: 10.1063/1.2210289  0.511
2005 Kadow C, Gossard AC, Rodwell MJW. Regrown-emitter InP heterojunction bisucpolar transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1140-1143. DOI: 10.1116/1.1885014  0.426
2005 Kadow C, Dahlström M, Bae JU, Lin HK, Gossard AC, Rodwell MJW, Brar B, Sullivan GJ, Nagy G, Bergman JI. n+-InAs-InAlAs recess gate technology for InAs-channel millimeter-wave HFETs Ieee Transactions On Electron Devices. 52: 151-158. DOI: 10.1109/Ted.2004.842534  0.483
2005 Lin HK, Kadow C, Bae JU, Rodwell MJW, Gossard AC, Brar B, Sullivan G, Nagy G, Bergman J. Design and characteristics of strained InAs/InAlAs composite-channel heterostructure field-effect transistors Journal of Applied Physics. 97. DOI: 10.1063/1.1831545  0.484
2004 Jho YD, Wang X, Kyrychenko FV, Reitze DH, Stanton CJ, Kono J, Wei X, Crooker SA, Kadow C, Gossard AC. Interband magneto-spectroscopy of a high-density two-dimensional electron gas in a strong in-plane magnetic field International Journal of Modern Physics B. 18: 3831-3834. DOI: 10.1142/S0217979204027542  0.407
2004 Hacker JB, Bergman J, Nagy G, Sullivan G, Kadow C, Lin HK, Gossard AC, Rodwell M, Brar B. An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier Ieee Microwave and Wireless Components Letters. 14: 156-158. DOI: 10.1109/Lmwc.2004.827132  0.502
2004 Lin HK, Kadow C, Dahlström M, Bae JU, Rodwell MJW, Gossard AC, Brar B, Sullivan G, Nagy G, Bergman J. InAs/InAsP composite channels for antimonide-based field-effect transistors Applied Physics Letters. 84: 437-439. DOI: 10.1063/1.1642275  0.538
2004 Hanson MP, Driscoll DC, Kadow C, Gossard AC. Metal/semiconductor superlattices containing semimetallic ErSb nanoparticles in GaSb Applied Physics Letters. 84: 221-223. DOI: 10.1063/1.1639932  0.612
2004 Kyrychenko FV, Jho YD, Kono J, Crooker SA, Sanders GD, Reitze DH, Stanton CJ, Wei X, Kadow C, Gossard AC. Interband magnetoabsorption study of the shift of the Fermi energy of a 2DEG with an in-plane magnetic field Physica E: Low-Dimensional Systems and Nanostructures. 22: 624-627. DOI: 10.1016/J.Physe.2003.12.085  0.436
2004 Scott DW, Kadow C, Dong Y, Wei Y, Gossard AC, Rodwell MJW. Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy Journal of Crystal Growth. 267: 35-41. DOI: 10.1016/J.Jcrysgro.2004.03.049  0.469
2003 Brown ER, Bacher A, Driscoll D, Hanson M, Kadow C, Gossard AC. Evidence for a strong surface-plasmon resonance on ErAs nanoparticles in GaAs. Physical Review Letters. 90: 077403. PMID 12633271 DOI: 10.1103/Physrevlett.90.077403  0.613
2003 Griebel M, Smet JH, Driscoll DC, Kuhl J, Diez CA, Freytag N, Kadow C, Gossard AC, Von Klitzing K. Tunable subpicosecond optoelectronic transduction in superlattices of self-assembled ErAs nanoislands. Nature Materials. 2: 122-6. PMID 12612698 DOI: 10.1038/Nmat819  0.491
2003 Griebel M, Smet JH, Kuhl J, Von Klitzing K, Driscoll DC, Kadow C, Gossard AC. Picosecond sampling with fiber-illuminated ErAs:GaAs photoconductive switches in a strong magnetic field and a cryogenic environment Applied Physics Letters. 82: 3179-3181. DOI: 10.1063/1.1573367  0.405
2003 Kadow C, Lin HK, Dahlström M, Rodwell M, Gossard AC, Brar B, Sullivan G. Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wells Journal of Crystal Growth. 251: 543-546. DOI: 10.1016/S0022-0248(02)02447-8  0.511
2002 Griebel M, Smet JH, Kuhl J, Driscoll D, Kadow C, Von Klitzing K, Gossard AC. Diffusion-controlled picosecond carrier dynamics in ErAs:GaAs superlattices Proceedings of Spie - the International Society For Optical Engineering. 4643: 56-61. DOI: 10.1117/12.470436  0.431
2001 Driscoll DC, Hanson M, Kadow C, Gossard AC. Transition to insulating behavior in the metal-semiconductor digital composite ErAs:InGaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1631-1634. DOI: 10.1116/1.1388211  0.602
2001 Woodside MT, Vale C, McEuen PL, Kadow C, Maranowski KD, Gossard AC. Imaging interedge-state scattering centers in the quantum Hall regime Physical Review B - Condensed Matter and Materials Physics. 64: 413101-413104. DOI: 10.1103/Physrevb.64.041310  0.654
2001 Driscoll DC, Hanson M, Kadow C, Gossard AC. Electronic structure and conduction in a metal-semiconductor digital composite: ErAs:InGaAs Applied Physics Letters. 78: 1703-1705. DOI: 10.1063/1.1355988  0.648
2000 Kadow C, Jackson AW, Gossard AC, Matsuura S, Blake GA. Self-assembled ErAs islands in GaAs for optical-heterodyne THz generation Applied Physics Letters. 76: 3510-3512. DOI: 10.1063/1.126690  0.484
2000 Williams JB, Sherwin MS, Maranowski KD, Kadow C, Gossard AC. Linewidth and dephasing of THz-frequency collective intersubband transitions in a GaAs/AlGaAs quantum well Physica E: Low-Dimensional Systems and Nanostructures. 7: 204-207. DOI: 10.1016/S1386-9477(99)00320-3  0.669
2000 Kadow C, Jackson AW, Gossard AC, Bowers JE, Matsuura S, Blake GA. Self-assembled ErAs islands in GaAs for THz applications Physica E: Low-Dimensional Systems and Nanostructures. 7: 97-100. DOI: 10.1016/S1386-9477(99)00314-8  0.403
2000 Streibl M, Wixforth A, Kotthaus JP, Kadow C, Gossard AC. Imaging of carrier dynamics in semiconductor heterostructures by surface acoustic waves Physica E: Low-Dimensional Systems and Nanostructures. 6: 255-259. DOI: 10.1016/S1386-9477(99)00137-X  0.475
2000 Woodside MT, Vale C, McCormick KL, McEuen PL, Kadow C, Maranowski KD, Gossard AC. Scanned potential microscopy of edge states in a quantum Hall liquid Physica E: Low-Dimensional Systems and Nanostructures. 6: 238-241. DOI: 10.1016/S1386-9477(99)00115-0  0.642
1999 Streibl M, Wixforth A, Kotthaus JP, Govorov AO, Kadow C, Gossard AC. Imaging of acoustic charge transport in semiconductor heterostructures by surface acoustic waves Applied Physics Letters. 75: 4139-4141. DOI: 10.1063/1.125562  0.471
1999 Kadow C, Fleischer SB, Ibbetson JP, Bowers JE, Gossard AC. Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates Applied Physics Letters. 75: 2575-2577. DOI: 10.1063/1.125082  0.393
1999 Williams JB, Sherwin MS, Maranowski KD, Kadow C, Gossard AC. Linewidth of THz intersubband transitions in GaAs/AlGaAs quantum wells Proceedings of Spie - the International Society For Optical Engineering. 3617: 126-132.  0.608
1998 Luyken RJ, Lorke A, Song AM, Streibl M, Kotthaus JP, Kadow C, English JH, Gossard AC. Highly anharmonic potential modulation in lateral superlattices fabricated using epitaxial InGaAs stressors Applied Physics Letters. 73: 1110-1112. DOI: 10.1063/1.122100  0.458
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