Christoph Kadow, Ph.D. - Publications

Affiliations: 
2000 University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering, Condensed Matter Physics

54 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Dibra D, Stecher M, Decker S, Lindemann A, Lutz J, Kadow C. On the origin of thermal runaway in a trench power MOSFET Ieee Transactions On Electron Devices. 58: 3477-3484. DOI: 10.1109/TED.2011.2160867  0.92
2011 Nelhiebel M, Illing R, Schreiber C, Wöhlert S, Lanzerstorfer S, Ladurner M, Kadow C, Decker S, Dibra D, Unterwalcher H, Rogalli M, Robl W, Herzig T, Poschgan M, Inselsbacher M, et al. A reliable technology concept for active power cycling to extreme temperatures Microelectronics Reliability. 51: 1927-1932. DOI: 10.1016/j.microrel.2011.06.042  0.92
2009 Kadow C, Decker S, Dibra D, Krischke N, Lanzerstorfer S, Maier H, Meyer T, Vannucci N, Zink R. Fabrication of trench isolation and trench power MOSFETs in a smart power IC technology with a single trench unit process Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 224-226. DOI: 10.1109/ISPSD.2009.5158042  0.92
2009 Dibra D, Stecher M, Lindemann A, Lutz J, Kadow C. Seebeck difference-temperature sensors integrated into smart power technologies Proceedings of the International Symposium On Power Semiconductor Devices and Ics. 216-219. DOI: 10.1109/ISPSD.2009.5158040  0.92
2008 Dibra D, Kadow C, Pfost M, Krischke N, Lindemann A, Lutz J, Stecher M. Scaling of temperature sensors for smart power MOSFETs Iet Seminar Digest. 2008. DOI: 10.1049/ic:20080180  0.92
2006 Parthasarathy N, Griffith Z, Kadow C, Singisetti U, Rodwell MJW, Fang XM, Loubychev D, Wu Y, Fastenau JM, Liu AWK. Collector-pedestal InGaAs/InP DHBTs fabricated in a single-growth, triple-implant process Ieee Electron Device Letters. 27: 313-316. DOI: 10.1109/Led.2006.872836  0.92
2006 Parthasarathy N, Kadow C, Griffith Z, Rodwell MJW, Urteaga M, Shinohara K, Pierson R, Brar B. Interface charge compensation in InP based heterojunction bipolar transistors with implanted subcollectors Applied Physics Letters. 89. DOI: 10.1063/1.2221512  0.92
2006 Gelfand IJ, Amasha S, Zumbühl DM, Kastner MA, Kadow C, Gossard AC. Surface-gated quantum hall effect in an inas heterostructure Applied Physics Letters. 88. DOI: 10.1063/1.2210289  0.92
2006 Hacker JB, Bergman J, Nagy G, Sullivan G, Kadow C, Lin HK, Gossard AC, Rodwell M, Brar B. An ultra-low power InAs/AlSb HEMT X-band low-Noise amplifier and RF switch 2006 International Conference On Compound Semiconductor Manufacturing Technology. 239-242.  0.92
2006 Parthasarathy N, Griffith Z, Kadow C, Singisetti U, Rodwell MJW, Urteaga M, Shinohara K, Brar B. Selectively implanted subcollector DHBTs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 2006: 104-107.  0.92
2005 Kadow C, Gossard AC, Rodwell MJW. Regrown-emitter InP heterojunction bisucpolar transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1140-1143. DOI: 10.1116/1.1885014  0.92
2005 Kadow C, Dahlström M, Bae JU, Lin HK, Gossard AC, Rodwell MJW, Brar B, Sullivan GJ, Nagy G, Bergman JI. n+-InAs-InAlAs recess gate technology for InAs-channel millimeter-wave HFETs Ieee Transactions On Electron Devices. 52: 151-158. DOI: 10.1109/Ted.2004.842534  0.92
2005 Hacker JB, Bergman J, Nagy G, Sullivan G, Kadow C, Lin HK, Gossard AC, Rodwell M, Brar B. An ultra-low power InAs/AlSb HEMT W-band low-noise amplifier Ieee Mtt-S International Microwave Symposium Digest. 2005: 1029-1032. DOI: 10.1109/MWSYM.2005.1516844  0.92
2005 Griffith Z, Dong Y, Scott D, Wei Y, Parthasarathy N, Dahlström M, Kadow C, Paidi V, Rodwell MJW, Urteaga M, Pierson R, Rowell P, Brar B, Lee S, Nguyen NX, et al. Transistor and circuit design for 100-200-GHz ICs Ieee Journal of Solid-State Circuits. 40: 2061-2068. DOI: 10.1109/JSSC.2005.854609  0.92
2005 Lin HK, Kadow C, Bae JU, Rodwell MJW, Gossard AC, Brar B, Sullivan G, Nagy G, Bergman J. Design and characteristics of strained InAs/InAlAs composite-channel heterostructure field-effect transistors Journal of Applied Physics. 97. DOI: 10.1063/1.1831545  0.92
2004 Jho YD, Wang X, Kyrychenko FV, Reitze DH, Stanton CJ, Kono J, Wei X, Crooker SA, Kadow C, Gossard AC. Interband magneto-spectroscopy of a high-density two-dimensional electron gas in a strong in-plane magnetic field International Journal of Modern Physics B. 18: 3831-3834. DOI: 10.1142/S0217979204027542  0.92
2004 Hacker JB, Bergman J, Nagy G, Sullivan G, Kadow C, Lin HK, Gossard AC, Rodwell M, Brar B. An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier Ieee Microwave and Wireless Components Letters. 14: 156-158. DOI: 10.1109/Lmwc.2004.827132  0.92
2004 Bergman J, Nagy G, Sullivan G, Ikhlassi A, Brar B, Kadow C, Lin HK, Gossard A, Rodwell M. Low-voltage, high-performance InAs/AlSb HEMTs with power gain above 100 GHz at 100 mV drain bias Device Research Conference - Conference Digest, Drc. 243-244. DOI: 10.1109/DRC.2004.1367888  0.92
2004 Rodwell M, Griffith Z, Scott D, Wei Y, Dong Y, Paidi V, Dahlström M, Parthasarathy N, Kadow C, Urteaga M, Pierson R, Rowell P, Brar B, Lee S, Nguyen N, et al. Transistor and circuit design for 100-200 GHz ICs Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. 207-210. DOI: 10.1109/CSICS.2004.1392539  0.92
2004 Lin HK, Kadow C, Dahlström M, Bae JU, Rodwell MJW, Gossard AC, Brar B, Sullivan G, Nagy G, Bergman J. InAs/InAsP composite channels for antimonide-based field-effect transistors Applied Physics Letters. 84: 437-439. DOI: 10.1063/1.1642275  0.92
2004 Hanson MP, Driscoll DC, Kadow C, Gossard AC. Metal/semiconductor superlattices containing semimetallic ErSb nanoparticles in GaSb Applied Physics Letters. 84: 221-223. DOI: 10.1063/1.1639932  0.92
2004 Kyrychenko FV, Jho YD, Kono J, Crooker SA, Sanders GD, Reitze DH, Stanton CJ, Wei X, Kadow C, Gossard AC. Interband magnetoabsorption study of the shift of the Fermi energy of a 2DEG with an in-plane magnetic field Physica E: Low-Dimensional Systems and Nanostructures. 22: 624-627. DOI: 10.1016/J.Physe.2003.12.085  0.92
2004 Scott DW, Kadow C, Dong Y, Wei Y, Gossard AC, Rodwell MJW. Low-resistance n-type polycrystalline InAs grown by molecular beam epitaxy Journal of Crystal Growth. 267: 35-41. DOI: 10.1016/J.Jcrysgro.2004.03.049  0.92
2004 Jho YD, Wang X, Reitze DH, Sanders GB, Kyrychenko FV, Stanton CJ, Kono J, Wei X, Kadow C, Gossard AC. Splitting of magneto-excitonic plasmas under intense femtosecond excitation in strong magnetic fields Osa Trends in Optics and Photonics Series. 97: 99-100.  0.92
2003 Brown ER, Bacher A, Driscoll D, Hanson M, Kadow C, Gossard AC. Evidence for a strong surface-plasmon resonance on ErAs nanoparticles in GaAs. Physical Review Letters. 90: 077403. PMID 12633271 DOI: 10.1103/Physrevlett.90.077403  0.92
2003 Griebel M, Smet JH, Driscoll DC, Kuhl J, Diez CA, Freytag N, Kadow C, Gossard AC, Von Klitzing K. Tunable subpicosecond optoelectronic transduction in superlattices of self-assembled ErAs nanoislands. Nature Materials. 2: 122-6. PMID 12612698 DOI: 10.1038/Nmat819  0.92
2003 Kadow C, Johnson JA, Kolstad K, Gossard C. Growth-temperature dependence of the microstructure of ErAs islands in GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 29-32. DOI: 10.1116/1.1529653  0.92
2003 Lin HK, Kadow C, Dahlström M, Bae JU, Rodwell M, Gossard AC, Brar B, Sullivan G, Nagy G, Bergman J. AlSb/InAs/InAsP/AlSb composite-channel HFETs Device Research Conference - Conference Digest, Drc. 2003: 151-152. DOI: 10.1109/DRC.2003.1226911  0.92
2003 Bergman J, Nagy G, Sullivan G, Brar B, Kadow C, Lin HK, Gossard A, Rodwell M. RF noise performance of low power InAs/AlSb HFETs Device Research Conference - Conference Digest, Drc. 2003: 147-148. DOI: 10.1109/DRC.2003.1226909  0.92
2003 Brar B, Bergman J, Pierson R, Rowell P, Nagy G, Sullivan G, Kadow C, Lin HK, Gossard A, Rodwell M. Low-voltage AlGaSb/InAs/AlGaSb PnP HBTs Device Research Conference - Conference Digest, Drc. 2003: 91-92. DOI: 10.1109/DRC.2003.1226887  0.92
2003 Griebel M, Smet JH, Kuhl J, Von Klitzing K, Driscoll DC, Kadow C, Gossard AC. Picosecond sampling with fiber-illuminated ErAs:GaAs photoconductive switches in a strong magnetic field and a cryogenic environment Applied Physics Letters. 82: 3179-3181. DOI: 10.1063/1.1573367  0.92
2003 Kadow C, Lin HK, Dahlström M, Rodwell M, Gossard AC, Brar B, Sullivan G. Reduction of the unintentional background electron density in AlSb/InAs/AlSb quantum wells Journal of Crystal Growth. 251: 543-546. DOI: 10.1016/S0022-0248(02)02447-8  0.92
2003 Bergman J, Nagy G, Sullivan G, Brar B, Kadow C, Lin HK, Gossard A, Rodwell M. InAs/AlSb HFETs with fτ and fmax above 150 GHz for low-power MMICs Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 219-222.  0.92
2002 Griebel M, Smet JH, Kuhl J, Driscoll D, Kadow C, Von Klitzing K, Gossard AC. Diffusion-controlled picosecond carrier dynamics in ErAs:GaAs superlattices Proceedings of Spie - the International Society For Optical Engineering. 4643: 56-61. DOI: 10.1117/12.470436  0.92
2002 Brar B, Nagy G, Bergman J, Sullivan G, Rowell P, Lin HK, Dahlstrom M, Kadow C, Rodwell M. RF and DC characteristics of low-leakage InAs/AlSb HFETs Proceedings Ieee Lester Eastman Conference On High Performance Devices. 409-413.  0.92
2002 Su MY, Carter S, Sherwin MS, Huntington A, Coldren LA, Kadow C, Gossard A. Nonperturbative terahertz nonlinear optics of excitons Conference On Quantum Electronics and Laser Science (Qels) - Technical Digest Series. 74: 61-62.  0.92
2001 Driscoll DC, Hanson M, Kadow C, Gossard AC. Transition to insulating behavior in the metal-semiconductor digital composite ErAs:InGaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1631-1634. DOI: 10.1116/1.1388211  0.92
2001 Woodside MT, Vale C, McEuen PL, Kadow C, Maranowski KD, Gossard AC. Imaging interedge-state scattering centers in the quantum Hall regime Physical Review B - Condensed Matter and Materials Physics. 64: 413101-413104. DOI: 10.1103/Physrevb.64.041310  0.92
2001 Driscoll DC, Hanson M, Kadow C, Gossard AC. Electronic structure and conduction in a metal-semiconductor digital composite: ErAs:InGaAs Applied Physics Letters. 78: 1703-1705. DOI: 10.1063/1.1355988  0.92
2000 Kadow C, Jackson AW, Gossard AC, Matsuura S, Blake GA. Self-assembled ErAs islands in GaAs for optical-heterodyne THz generation Applied Physics Letters. 76: 3510-3512. DOI: 10.1063/1.126690  0.92
2000 Williams JB, Sherwin MS, Maranowski KD, Kadow C, Gossard AC. Linewidth and dephasing of THz-frequency collective intersubband transitions in a GaAs/AlGaAs quantum well Physica E: Low-Dimensional Systems and Nanostructures. 7: 204-207. DOI: 10.1016/S1386-9477(99)00320-3  0.92
2000 Kadow C, Jackson AW, Gossard AC, Bowers JE, Matsuura S, Blake GA. Self-assembled ErAs islands in GaAs for THz applications Physica E: Low-Dimensional Systems and Nanostructures. 7: 97-100. DOI: 10.1016/S1386-9477(99)00314-8  0.92
2000 Streibl M, Wixforth A, Kotthaus JP, Kadow C, Gossard AC. Imaging of carrier dynamics in semiconductor heterostructures by surface acoustic waves Physica E: Low-Dimensional Systems and Nanostructures. 6: 255-259. DOI: 10.1016/S1386-9477(99)00137-X  0.92
2000 Woodside MT, Vale C, McCormick KL, McEuen PL, Kadow C, Maranowski KD, Gossard AC. Scanned potential microscopy of edge states in a quantum Hall liquid Physica E: Low-Dimensional Systems and Nanostructures. 6: 238-241. DOI: 10.1016/S1386-9477(99)00115-0  0.92
2000 Kadow C, Jackson AW, Gossard AC, Matsuura S, Blake GA. Self-assembled ErAs islands in GaAs for optical-heterodyne THz generation Applied Physics Letters. 76: 3510-3512.  0.92
2000 Kadow C, Johnson JA, Kolstad K, Ibbetson JP, Gossard AC. Growth and microstructure of self-assembled ErAs islands in GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2197-2203.  0.92
1999 Streibl M, Wixforth A, Kotthaus JP, Govorov AO, Kadow C, Gossard AC. Imaging of acoustic charge transport in semiconductor heterostructures by surface acoustic waves Applied Physics Letters. 75: 4139-4141. DOI: 10.1063/1.125562  0.92
1999 Streibl M, Beil F, Wixforth A, Kadow C, Gossard AC. SAW tomography - spatially resolved charge detection by SAW in semiconductor structures for imaging applications Proceedings of the Ieee Ultrasonics Symposium. 1: 11-14.  0.92
1999 Kadow C, Fleischer SB, Ibbetson JP, Bowers JE, Gossard AC, Dong JW, Palmstrøm CJ. Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics Applied Physics Letters. 75: 3548-3550.  0.92
1999 Kadow C, Fleischer SB, Ibbetson JP, Bowers JE, Gossard AC. Subpicosecond carrier dynamics in low-temperature grown GaAs on Si substrates Applied Physics Letters. 75: 2575-2577.  0.92
1999 Matsuura S, Blake GA, Wyss RA, Pearson JC, Kadow C, Jackson AW, Gossard AC. A traveling-wave THz photomixer based on angle-tuned phase matching Applied Physics Letters. 74: 2872-2874.  0.92
1999 Williams JB, Sherwin MS, Maranowski KD, Kadow C, Gossard AC. Linewidth of THz intersubband transitions in GaAs/AlGaAs quantum wells Proceedings of Spie - the International Society For Optical Engineering. 3617: 126-132.  0.92
1999 Su MY, Phillips C, Kadow C, Ko J, Coldren LA, Gossard AC, Sherwin MS. Coherent terahertz mixing spectroscopy of asymmetric quantum well intersubband transitions Proceedings of Spie - the International Society For Optical Engineering. 3617: 106-111.  0.92
1998 Luyken RJ, Lorke A, Song AM, Streibl M, Kotthaus JP, Kadow C, English JH, Gossard AC. Highly anharmonic potential modulation in lateral superlattices fabricated using epitaxial InGaAs stressors Applied Physics Letters. 73: 1110-1112. DOI: 10.1063/1.122100  0.92
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