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Chad S. Gallinat, Ph.D. - Publications

Affiliations: 
2008 Materials University of California, Santa Barbara, Santa Barbara, CA, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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39 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Enck RW, Woodward N, Gallinat C, Metcalfe G, Sampath AV, Shen H, Wraback M. Plasma-assisted molecular beam epitaxy of strain-compensated a-plane InGaN/AlGaN superlattices Physica Status Solidi (C) Current Topics in Solid State Physics. 12: 434-438. DOI: 10.1002/Pssc.201400208  0.454
2014 Woodward N, Enck R, Gallinat CS, Rodak LE, Metcalfe GD, Speck JS, Shen H, Wraback M. Evidence of lateral electric fields in c -plane III-V nitrides via terahertz emission Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 686-689. DOI: 10.1002/Pssc.201300687  0.382
2014 Rodak LE, Sampath AV, Gallinat CS, Smith J, Chen Y, Zhou Q, Campbell JC, Shen H, Wraback M. A III-nitride polarization enhanced electron filter for controlling the spectral response of solar-blind AlGaN/AlN/SiC photodiodes Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 782-785. DOI: 10.1002/Pssc.201300684  0.425
2014 Connelly BC, Gallinat CS, Woodward NT, Enck RW, Metcalfe GD, Tompkins R, Jones KA, Shen H, Wraback M. Time-resolved electroabsorption measurement of carrier velocity in inverted polarity In1-xGax N/GaN heterostructures due to internal electric fields Physica Status Solidi (C) Current Topics in Solid State Physics. 11: 682-685. DOI: 10.1002/Pssc.201300681  0.414
2013 Newman S, Gallinat C, Wright J, Enck R, Sampath A, Shen H, Reed M, Wraback M. Wavelength stable, p-side-down green light emitting diodes grown by molecular beam epitaxy Journal of Vacuum Science & Technology B. 31: 10601. DOI: 10.1116/1.4769732  0.453
2013 Rodak LE, Sampath AV, Gallinat CS, Chen Y, Zhou Q, Campbell JC, Shen H, Wraback M. Solar-blind AlxGa1-xN/AlN/SiC photodiodes with a polarization-induced electron filter Applied Physics Letters. 103. DOI: 10.1063/1.4818551  0.309
2013 Fehlberg TB, Umana-Membreno GA, Gallinat CS, Koblmüller G, Bernardis S, Nener BD, Parish G, Speck JS. Erratum: Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy [Phys. Status Solidi C4, 2423-2427 (2007)] Physica Status Solidi (C). 10: 272-272. DOI: 10.1002/Pssc.201370003  0.319
2012 Parameshwaran V, Gallinat C, Enck RW, Sampath AV, Shen PH, Kuykendall T, Aloni S, Wraback M, Clemens BM. III-V nitride semiconductors for solar hydrogen production Proceedings of Spie - the International Society For Optical Engineering. 8377. DOI: 10.1117/12.925200  0.313
2012 Sampath AV, Enck RW, Gallinat CS, Shen H, Wraback M, Zhou Q, McIntosh D, Campbell JC. III-nitride/SiC avalanche photodetectors for enabling compact biological agent identification and detection Proceedings of Spie - the International Society For Optical Engineering. 8376. DOI: 10.1117/12.918866  0.354
2011 Romanov AE, Young EC, Wu F, Tyagi A, Gallinat CS, Nakamura S, Denbaars SP, Speck JS. Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy Journal of Applied Physics. 109. DOI: 10.1063/1.3590141  0.365
2010 Xu G, Ding YJ, Zhao H, Liu G, Jamil M, Tansu N, Zotova IB, Stutz CE, Diggs DE, Fernelius N, Hopkins FK, Gallinat CS, Koblmüller G, Speck JS. THz generation from InN films due to destructive interference between optical rectification and photocurrent surge Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/1/015004  0.303
2010 Hurni CA, Bierwagen O, Lang JR, McSkimming BM, Gallinat CS, Young EC, Browne DA, Mishra UK, Speck JS. P-n junctions on Ga-face GaN grown by NH3 molecular beam epitaxy with low ideality factors and low reverse currents Applied Physics Letters. 97. DOI: 10.1063/1.3521388  0.418
2010 Reurings F, Tuomisto F, Gallinat CS, Koblmüller G, Speck JS. In vacancies in InN grown by plasma-assisted molecular beam epitaxy Applied Physics Letters. 97. DOI: 10.1063/1.3516467  0.425
2010 Farrell RM, Haeger DA, Chen X, Gallinat CS, Davis RW, Cornish M, Fujito K, Keller S, Denbaars SP, Nakamura S, Speck JS. Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates Applied Physics Letters. 96. DOI: 10.1063/1.3447926  0.307
2010 Miller N, Ager JW, Smith HM, Mayer MA, Yu KM, Haller EE, Walukiewicz W, Schaff WJ, Gallinat C, Koblmüller G, Speck JS. Hole transport and photoluminescence in Mg-doped InN Journal of Applied Physics. 107. DOI: 10.1063/1.3427564  0.311
2010 Gallinat CS, Koblmüller G, Wu F, Speck JS. Evaluation of threading dislocation densities in In-and N-face InN Journal of Applied Physics. 107. DOI: 10.1063/1.3319557  0.305
2010 Sizov D, Bhat R, Napierala J, Gallinat C, Song K, Allen D, Zah C. Optical gain and gain saturation of blue‐green InGaN quantum wells Physica Status Solidi (a). 207: 1309-1312. DOI: 10.1002/Pssa.200983540  0.342
2009 Sizov DS, Bhat R, Napierala J, Xi J, Allen DE, Gallinat CS, Zah CE. Lasing and optical gain around 500 nm from optically pumped lasers grown on c-plane GaN substrates. Optics Letters. 34: 328-30. PMID 19183647 DOI: 10.1364/Ol.34.000328  0.309
2009 Sizov DS, Bhat R, Napierala J, Gallinat C, Song K, Zah C. 500-nm Optical Gain Anisotropy of Semipolar (1122) InGaN Quantum Wells Applied Physics Express. 2: 71001. DOI: 10.1143/Apex.2.071001  0.317
2009 Nagata T, Koblmüller G, Bierwagen O, Gallinat CS, Speck JS. Surface structure and chemical states of a-plane and c-plane InN films Applied Physics Letters. 95. DOI: 10.1063/1.3238286  0.376
2009 Gallinat CS, Koblmüller G, Speck JS. The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN Applied Physics Letters. 95. DOI: 10.1063/1.3173202  0.377
2009 Koblmüller G, Metcalfe GD, Wraback M, Wu F, Gallinat CS, Speck JS. In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN Applied Physics Letters. 94. DOI: 10.1063/1.3092482  0.377
2009 Miller N, Ager JW, Jones RE, Smith HM, Mayer MA, Yu KM, Hawkridge ME, Liliental-Weber Z, Haller EE, Walukiewicz W, Schaff WJ, Gallinat C, Koblmüller G, Speck JS. Electrical and electrothermal transport in InN: The roles of defects Physica B: Condensed Matter. 404: 4862-4865. DOI: 10.1016/J.Physb.2009.08.242  0.304
2009 Scarpulla MA, Gallinat CS, Mack S, Speck JS, Gossard AC. GdN (1 1 1) heteroepitaxy on GaN (0 0 0 1) by N2 plasma and NH3 molecular beam epitaxy Journal of Crystal Growth. 311: 1239-1244. DOI: 10.1016/J.Jcrysgro.2008.12.050  0.557
2009 Reurings F, Tuomisto F, Gallinat CS, Koblmüller G, Speck JS. Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions Physica Status Solidi (C) Current Topics in Solid State Physics. 6. DOI: 10.1002/Pssc.200880952  0.309
2008 Wraback M, Chern GD, Readinger ED, Shen PH, Koblmüller G, Gallinat C, Speck JS. INDIUM NITRIDE: A NEW MATERIAL FOR HIGH EFFICIENCY, COMPACT, 1550nm LASER-BASED TERAHERTZ SOURCES IN CHEMICAL AND BIOLOGICAL DETECTION International Journal of High Speed Electronics and Systems. 18: 3-9. DOI: 10.1142/S0129156408005084  0.356
2008 King PDC, Veal TD, Gallinat CS, Koblmüller G, Bailey LR, Speck JS, McConville CF. Influence of growth conditions and polarity on interface-related electron density in InN Journal of Applied Physics. 104. DOI: 10.1063/1.3020528  0.332
2008 Koblmüller G, Hirai A, Wu F, Gallinat CS, Metcalfe GD, Shen H, Wraback M, Speck JS. Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN Applied Physics Letters. 93. DOI: 10.1063/1.3001806  0.367
2008 Fehlberg TB, Gallinat CS, Umana-Membreno GA, Koblmüller G, Nener BD, Speck JS, Parish G. Effect of MBE growth conditions on multiple electron transport in InN Journal of Electronic Materials. 37: 593-596. DOI: 10.1007/S11664-007-0345-8  0.369
2008 Fehlberg TB, Koblmüller G, Umana-Membreno GA, Gallinat CS, Nener BD, Speck JS, Parish G. Multiple carrier transport in N-face indium nitride Physica Status Solidi (B) Basic Research. 245: 907-909. DOI: 10.1002/Pssb.200778665  0.446
2008 Gorczyca I, Dmowski L, Plesiewicz J, Suski T, Christensen NE, Svane A, Gallinat CS, Koblmueller G, Speck JS. Band structure and effective mass of InN under pressure Physica Status Solidi (B) Basic Research. 245: 887-889. DOI: 10.1002/Pssb.200778548  0.308
2007 Koblmüller G, Gallinat CS, Speck JS. Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy Journal of Applied Physics. 101. DOI: 10.1063/1.2718884  0.314
2007 Fehlberg TB, Umana-Membreno GA, Gallinat CS, Koblmüller G, Bernardis S, Nener BD, Parish G, Speck JS. Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 2423-2427. DOI: 10.1002/Pssc.200674780  0.349
2006 Fehlberg TB, Umana-Membreno GA, Nener BD, Parish G, Gallinat CS, Koblmüller G, Bernardis S, Speck JS. Characterisation of electron transport in MBE grown indium nitride Conference On Optoelectronic and Microelectronic Materials and Devices, Proceedings, Commad. 11-14. DOI: 10.1109/COMMAD.2006.4429865  0.31
2006 Chern GD, Readinger ED, Shen H, Wraback M, Gallinat CS, Koblmüller G, Speck JS. Excitation wavelength dependence of terahertz emission from InN and InAs Applied Physics Letters. 89. DOI: 10.1063/1.2358938  0.345
2006 Koblmüller G, Gallinat CS, Bernardis S, Speck JS, Chern GD, Readinger ED, Shen H, Wraback M. Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy Applied Physics Letters. 89. DOI: 10.1063/1.2335685  0.36
2006 Gallinat CS, Koblmüller G, Brown JS, Bernardis S, Speck JS, Chern GD, Readinger ED, Shen H, Wraback M. In-polar InN grown by plasma-assisted molecular beam epitaxy Applied Physics Letters. 89. DOI: 10.1063/1.2234274  0.48
2004 Schuller JA, Johnston-Halperin E, Gallinat CS, Knotz H, Gossard AC, Awschalom DD. Structural engineering of ferromagnetism in III-V digital ferromagnetic heterostructures Journal of Applied Physics. 95: 4922-4927. DOI: 10.1063/1.1667594  0.38
2003 Johnston-Halperin E, Schuller JA, Gallinat CS, Kreutz TC, Myers RC, Kawakami RK, Knotz H, Gossard AC, Awschalom DD. Independent electronic and magnetic doping in (Ga,Mn)As based digital ferromagnetic heterostructures Physical Review B - Condensed Matter and Materials Physics. 68: 1653281-1653289. DOI: 10.1103/Physrevb.68.165328  0.567
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