Year |
Citation |
Score |
2013 |
Kim J, Toledo NG, Lal S, Lu J, Buehl TE, Mishra UK. Wafer-bonded p-n heterojunction of GaAs and chemomechanically polished N-polar GaN Ieee Electron Device Letters. 34: 42-44. DOI: 10.1109/Led.2012.2225137 |
0.305 |
|
2012 |
Clinger LE, Pernot G, Buehl TE, Burke PG, Gossard AC, Palmstrom CJ, Shakouri A, Zide JMO. Thermoelectric properties of epitaxial TbAs:InGaAs nanocomposites Journal of Applied Physics. 111. DOI: 10.1063/1.4711095 |
0.529 |
|
2012 |
Selezneva E, Clinger LE, Ramu AT, Pernot G, Buehl TE, Favaloro T, Bahk JH, Bian Z, Bowers JE, Zide JMO, Shakouri A. Thermoelectric transport in InGaAs with high concentration of rare-earth tbas embedded nanoparticles Journal of Electronic Materials. 41: 1820-1825. DOI: 10.1007/S11664-012-2097-3 |
0.429 |
|
2012 |
Burke PG, Buehl TE, Gilles P, Lu H, Shakouri A, Palmstrom CJ, Bowers JE, Gossard AC. Controlling n-type carrier density from Er doping of InGaAs with MBE growth temperature Journal of Electronic Materials. 41: 948-953. DOI: 10.1007/S11664-012-2050-5 |
0.508 |
|
2011 |
Buschbeck J, Kawasaki J, Buehl TE, Gossard AC, Palmstrøm CJ. Growth of epitaxial NiTi shape memory alloy films on GaAs(001) and evidence of martensitic transformation Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3556973 |
0.426 |
|
2011 |
Cassels LE, Buehl TE, Burke PG, Palmstrøm CJ, Gossard AC, Pernot G, Shakouri A, Haughn CR, Doty MF, Zide JMO. Growth and characterization of TbAs:GaAs nanocomposites Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3555388 |
0.542 |
|
2011 |
Buehl TE, Palmstrøm CJ, Gossard AC. Embedded ErAs nanorods on GaAs (n11) substrates by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3549888 |
0.588 |
|
2011 |
Kawasaki JK, Timm R, Buehl TE, Lundgren E, Mikkelsen A, Gossard AC, Palmstrøm CJ. Cross-sectional scanning tunneling microscopy and spectroscopy of semimetallic ErAs nanostructures embedded in GaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3547713 |
0.524 |
|
2010 |
Buehl TE, Lebeau JM, Stemmer S, Scarpulla MA, Palmstrøm CJ, Gossard AC. Growth of embedded ErAs nanorods on (4 1 1)A and (4 1 1)B GaAs by molecular beam epitaxy Journal of Crystal Growth. 312: 2089-2092. DOI: 10.1016/J.Jcrysgro.2010.04.031 |
0.53 |
|
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