| Year |
Citation |
Score |
| 2006 |
Kim H, Tarhan E, Chen G, Ramdas AK, Sciacca MD, Gunshor RL. Origin of a localized vibrational mode in a GaSb substrate with a MBE-grown ZnTe epilayer Semiconductor Science and Technology. 21: 1224-1228. DOI: 10.1088/0268-1242/21/9/003 |
0.324 |
|
| 2000 |
Chen WL, Gunshor RL, Han J, Higashimine K, Otsuka N. Growth of InN by MBE Mrs Internet Journal of Nitride Semiconductor Research. 5. DOI: 10.1557/Proc-595-F99W3.30 |
0.495 |
|
| 1998 |
Zhou H, Nurmikko AV, Chu CC, Han J, Gunshor RL, Takagahara T. Observation of antibound states for exciton pairs by four-wave-mixing experiments in a single ZnSe quantum well Physical Review B. 58. DOI: 10.1103/Physrevb.58.R10131 |
0.361 |
|
| 1998 |
Kelkar P, Nurmikko AV, Chu CC, Han J, Chen WL, Gunshor RL. Quantum microcavities in II-VI semiconductors: Strong coupling regime in vertical cavity lasers Journal of Crystal Growth. 184: 745-749. DOI: 10.1016/S0022-0248(98)80155-3 |
0.417 |
|
| 1997 |
Kelkar PV, Kozlov VG, Nurmikko AV, Chu CC, Han J, Gunshor RL. Stimulated emission, gain, and coherent oscillations in II-VI semiconductor microcavities Physical Review B - Condensed Matter and Materials Physics. 56: 7564-7573. DOI: 10.1103/Physrevb.56.7564 |
0.425 |
|
| 1997 |
Nurmikko A, Gunshor RL. Blue and green semiconductor lasers: A status report Semiconductor Science and Technology. 12: 1337-1347. DOI: 10.1088/0268-1242/12/11/003 |
0.396 |
|
| 1997 |
Song YK, Nurmikko AV, Schmiedel T, Chu CC, Han J, Chen WL, Gunshor RL. Spectroscopy of a ZnCdSe/ZnSSe quantum well diode laser in high magnetic fields Applied Physics Letters. 71: 2874-2876. DOI: 10.1063/1.120202 |
0.393 |
|
| 1997 |
Han J, Gunshor RL. Chapter 1 MBE Growth and Electrical Properties of Wide Bandgap ZnSe-based II-VI Semiconductors Semiconductors and Semimetals. 44: 1-58. DOI: 10.1016/S0080-8784(08)60191-X |
0.426 |
|
| 1997 |
Ng TB, Chu CC, Han J, Hua GC, Gunshor RL, Ho E, Warlick EL, Kolodziejski LA, Nurmikko AV. Reduction of extended defects in II-VI blue-green laser diodes Journal of Crystal Growth. 175: 552-557. DOI: 10.1016/S0022-0248(96)01024-X |
0.373 |
|
| 1996 |
Kozlov V, Kelkar P, Vertikov A, Nurmikko AV, Chu C, Han J, Hua CG, Gunshor RL. Gain spectroscopy of excitonic molecules and its dynamics in a ZnSe single quantum well. Physical Review. B, Condensed Matter. 54: 13932-13937. PMID 9985311 DOI: 10.1103/Physrevb.54.13932 |
0.382 |
|
| 1996 |
Kozlov V, Kelkar P, Nurmikko AV, Chu C, Grillo DC, Han J, Hua CG, Gunshor RL. Excitonic molecules and stimulated emission in a ZnSe single quantum well. Physical Review. B, Condensed Matter. 53: 10837-10840. PMID 9982652 DOI: 10.1103/Physrevb.53.10837 |
0.409 |
|
| 1996 |
Nurmikko A, Gunshor RL. Wide bandgap semiconductors: blue-green lasers and exciton physics Physica Scripta. 1996: 72-77. DOI: 10.1088/0031-8949/1996/T68/010 |
0.408 |
|
| 1996 |
Chu CC, Ng TB, Han J, Hua GC, Gunshor RL, Ho E, Warlick EL, Kolodziejski LA, Nurmikko AV. Reduction of structural defects in II–VI blue green laser diodes Applied Physics Letters. 69: 602-604. DOI: 10.1063/1.117920 |
0.372 |
|
| 1996 |
Song YK, Nurmikko AV, Chu CC, Han J, Ng TB, Gunshor RL. Degradation and lifetime of II-VI blue-green LEDs under high injection Electronics Letters. 32: 1829-1830. DOI: 10.1049/El:19961209 |
0.338 |
|
| 1996 |
Gunshor RL, Nurmikko AV. Wide bandgap semiconductors and their application to light emitting devices Current Opinion in Solid State and Materials Science. 1: 4-10. DOI: 10.1016/S1359-0286(96)80002-7 |
0.356 |
|
| 1996 |
Nurmikko AV, Jeon H, Gunshor RL, Han J. II–VI lasers — new directions Journal of Crystal Growth. 159: 644-652. DOI: 10.1016/0022-0248(95)00838-1 |
0.382 |
|
| 1996 |
Gunshor RL, Han J, Hua GC, Nurmikko AV, Jeon H. Growth issues for blue-green laser diodes Journal of Crystal Growth. 159: 1-10. DOI: 10.1016/0022-0248(95)00776-8 |
0.42 |
|
| 1996 |
Hua GC, Grillo DC, Ng TB, Chu CC, Han J, Gunshor RL, Nurmikko AV. Study on stacking faults and microtwins in wide bandgap II-VI semiconductor heterostructures grown on GaAs Journal of Electronic Materials. 25: 263-267. DOI: 10.1007/Bf02666255 |
0.378 |
|
| 1995 |
Kelkar P, Kozlov V, Jeon H, Nurmikko AV, Chu C, Grillo DC, Han J, Hua CG, Gunshor RL. Excitons in a II-VI semiconductor microcavity in the strong-coupling regime. Physical Review. B, Condensed Matter. 52: R5491-R5494. PMID 9981812 DOI: 10.1103/Physrevb.52.R5491 |
0.37 |
|
| 1995 |
Gunshor RL, Nurmikko AV. II-VI Blue-Green Laser Diodes: A Frontier of Materials Research. Mrs Bulletin. 20: 15-19. DOI: 10.1557/S088376940003712X |
0.319 |
|
| 1995 |
Grillo DC, Ringle MD, Hua GC, Han J, Gunshor RL, Hovinen M, Nurmikko AV. Issues of II-VI molecular-beam epitaxy growth toward a long lifetime blue/green laser diode Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 720-723. DOI: 10.1116/1.588145 |
0.378 |
|
| 1995 |
Thomas RJ, Rockwell B, Chandrasekhar HR, Chandrasekhar M, Ramdas AK, Kobayashi M, Gunshor RL. Temperature dependence of strain in ZnSe(epilayer)/GaAs(epilayer) Journal of Applied Physics. 78: 6569-6573. DOI: 10.1063/1.360477 |
0.31 |
|
| 1995 |
Hovinen M, Ding J, Salokatve A, Nurmikko AV, Hua GC, Grillo DC, He L, Han J, Ringle M, Gunshor RL. On degradation of ZnSe-based blue-green diode lasers Journal of Applied Physics. 77: 4150-4152. DOI: 10.1063/1.359507 |
0.387 |
|
| 1995 |
Jeon H, Kozlov V, Kelkar P, Nurmikko AV, Chu CC, Grillo DC, Han J, Hua GC, Gunshor RL. Room-temperature optically pumped blue-green vertical cavity surface emitting laser Applied Physics Letters. 67: 1668-1670. DOI: 10.1063/1.115051 |
0.36 |
|
| 1995 |
Hovinen M, Ding J, Nurmikko AV, Hua GC, Grillo DC, He L, Han J, Gunshor RL. Degradation of (Zn,Cd)Se quantum well heterostructures for blue/green light emitters under high optical injection Applied Physics Letters. 66: 2013-2015. DOI: 10.1063/1.113676 |
0.448 |
|
| 1995 |
Jeon H, Kozlov V, Kelkar P, Nurmikko AV, Grillo DC, Han J, Ringle M, Gunshor RL. Optically pumped blue-green vertical cavity surface emitting lasers Electronics Letters. 31: 106-108. DOI: 10.1049/El:19950075 |
0.399 |
|
| 1995 |
Gunshor RL, Han J, Nurmikko AV, Salokatve A. The development of low voltage room temperature continuous wave laser diodes Journal of Crystal Growth. 150: 790-796. DOI: 10.1016/0022-0248(95)80048-H |
0.367 |
|
| 1995 |
Han J, Gunshor RL, Nurmikko AV. Ohmic contact and transport properties of II-VI Green/Blue laser diodes Journal of Electronic Materials. 24: 151-154. DOI: 10.1007/Bf02659888 |
0.382 |
|
| 1995 |
Fan Y, Han J, Gunshor RL, Walker J, Johnson NM, Nurmikko AV. The study of nitrogen doping in ZnSe and ZnSe:Te Journal of Electronic Materials. 24: 131-135. DOI: 10.1007/Bf02659885 |
0.316 |
|
| 1995 |
Han J, Gunshor RL, Nurmikko AV. MBE of ZnSe Alloys to Achieve Room Temperature CW Laser Diodes Physica Status Solidi B-Basic Solid State Physics. 187: 285-290. DOI: 10.1002/Pssb.2221870204 |
0.429 |
|
| 1995 |
Kolodziejski LA, Gunshor RL, Nurmikko AV. Wide-bandgap II-VI heterostructures for blue/green optical sources: Key materials issues Annual Review of Materials Science. 25: 711-753. |
0.368 |
|
| 1994 |
Ding J, Hagerott M, Kelkar P, Nurmikko AV, Grillo DC, He L, Han J, Gunshor RL. Role of Coulomb-correlated electron-hole pairs in ZnSe-based quantum-well diode lasers. Physical Review. B, Condensed Matter. 50: 5787-5790. PMID 9976940 DOI: 10.1103/Physrevb.50.5787 |
0.425 |
|
| 1994 |
Ringle MD, Grillo DC, Fan Y, He L, Han J, Gunshor RL, Salokatve A, Jeon H, Hovinen M, Nurmikko AV, Hua GC, Otsuka N. MBE growth and characterization of II-VI blue/green laser diodes having CW operation at room temperature Materials Research Society Symposium - Proceedings. 340: 431-436. DOI: 10.1557/Proc-340-431 |
0.404 |
|
| 1994 |
Fan Y, Grillo DC, Ringle MD, Han J, He L, Gunshor RL, Salokatve A, Jeon H, Hovinen M, Nurmikko AV, Hua GC, Otsuka N. Electrical properties of blue/green diode lasers Journal of Vacuum Science & Technology B. 12: 2480-2483. DOI: 10.1116/1.587788 |
0.398 |
|
| 1994 |
Han J, He L, Grillo DC, Clark SM, Gunshor RL, Jeon H, Salokatve A, Nurmikko AV, Hua GC, Otsuka N. Molecular Beam Epitaxy Growth Of Pseudomorphic Ii-Vi Multilayered Structures For Blue/Green Laser Diodes And Light-Emitting Diodes Journal of Vacuum Science & Technology B. 12: 1254-1257. DOI: 10.1116/1.587015 |
0.418 |
|
| 1994 |
Kozlov V, Salokatve A, Nurmikko AV, Grillo DC, He L, Han J, Fan Y, Ringle M, Gunshor RL. Gain characteristics of blue/green II-VI quantum well diode lasers Applied Physics Letters. 65: 1863-1864. DOI: 10.1063/1.112864 |
0.425 |
|
| 1994 |
Fan Y, Han J, He L, Gunshor RL, Brandt MS, Walker J, Johnson NM, Nurmikko AV. Observations on the limits to p-type doping in ZnSe Applied Physics Letters. 65: 1001-1003. DOI: 10.1063/1.112205 |
0.329 |
|
| 1994 |
Hua GC, Otsuka N, Grillo DC, Fan Y, Han J, Ringle MD, Gunshor RL, Hovinen M, Nurmikko AV. Microstructure study of a degraded pseudomorphic separate confinement heterostructure blue-green laser diode Applied Physics Letters. 65: 1331-1333. DOI: 10.1063/1.112042 |
0.414 |
|
| 1994 |
Grillo DC, Han J, Ringle M, Hua G, Gunshor RL, Kelkar P, Kozlov V, Jeon H, Nurmikko AV. Blue ZnSe quantum-well diode laser Electronics Letters. 30: 2131-2133. DOI: 10.1049/El:19941468 |
0.402 |
|
| 1994 |
Ringle MD, Grillo DC, Fan Y, He L, Han J, Gunshor RL, Salokatve A, Jeon H, Hovinen M, Nurmikko AV, Hua GC, Otsuka N. Molecular beam epitaxial growth and characterization of II-VI blue-green laser diodes having continuous-wave operation at room temperature Materials Science and Engineering B. 28: 51-54. DOI: 10.1016/0921-5107(94)90014-0 |
0.42 |
|
| 1994 |
Nurmikko AV, Gunshor RL. Blue-green semiconductor lasers Solid State Communications. 92: 113-118. DOI: 10.1016/0038-1098(94)90864-8 |
0.383 |
|
| 1994 |
Salokatve A, Jeon H, Hovinen M, Kelkar P, Nurmikko AV, Grillo DC, He L, Han J, Fan Y, Gunshor RL. Ridge waveguide, separate confinement green-blue heterostructure lasers Journal of Crystal Growth. 138: 1077. DOI: 10.1016/0022-0248(94)90962-8 |
0.418 |
|
| 1994 |
Ding J, Hagerott M, Kelkar P, Nurmikko AV, Grillo DC, He L, Han J, Gunshor RL. Gain and dynamics in ZnSe-based quantum wells Journal of Crystal Growth. 138: 719-726. DOI: 10.1016/0022-0248(94)90897-4 |
0.43 |
|
| 1994 |
Han J, Fan Y, Ringle MD, He L, Grillo DC, Gunshor RL, Hua GC, Otsuka N. Ohmic contacts and transport properties in ZnSe-based heterostructures Journal of Crystal Growth. 138: 464-470. DOI: 10.1016/0022-0248(94)90851-6 |
0.352 |
|
| 1994 |
Hua GC, Otsuka N, Grillo DC, Han J, He L, Gunshor RL. Phase separation in ZnSe1-xSx and Zn1-yMgySe1-xSx layers grown by molecular beam epitaxy Journal of Crystal Growth. 138: 367-372. DOI: 10.1016/0022-0248(94)90835-4 |
0.314 |
|
| 1994 |
Fan Y, Han J, He L, Saraie J, Gunshor RL, Hagerott M, Nurmikko AV. Electrical transport characterizations of nitrogen doped ZnSe and ZnTe films Journal of Electronic Materials. 23: 245-249. DOI: 10.1007/Bf02670630 |
0.358 |
|
| 1993 |
Jeon H, Hagerott M, Ding J, Nurmikko AV, Grillo DC, Xie W, Kobayashi M, Gunshor RL. Pulsed room-temperature operation of a blue-green ZnSe quantum-well diode laser. Optics Letters. 18: 125-7. PMID 19802059 DOI: 10.1364/Ol.18.000125 |
0.402 |
|
| 1993 |
Fan Y, Han J, He L, Saraie J, Gunshor RL, Hagerott M, Jeon H, Nurmikko AV, Hua GC, Otsuka N. Ohmic contact to p‐Zn(S,Se) using a pseudograded Zn(Te,Se) structure Journal of Vacuum Science & Technology B. 11: 1748-1751. DOI: 10.1116/1.586474 |
0.38 |
|
| 1993 |
Fan Y, Han J, He L, Saraie J, Gunshor RL, Hagerott MM, Nurmikko AV. Transport study of ZnSe:N employing Zn(Se,Te) graded contacts Applied Physics Letters. 63: 1812-1814. DOI: 10.1063/1.110671 |
0.388 |
|
| 1993 |
Ding J, Nurmikko AV, Grillo DC, He L, Han J, Gunshor RL. Photoluminescence in ZnSe-based quantum well wire structures Applied Physics Letters. 63: 2254-2256. DOI: 10.1063/1.110544 |
0.426 |
|
| 1993 |
Grillo DC, Fan Y, Han J, He L, Gunshor RL, Salokatve A, Hagerott M, Jeon H, Nurmikko AV, Hua GC, Otsuka N. Pseudomorphic separate confinement heterostructure blue-green diode lasers Applied Physics Letters. 63: 2723-2725. DOI: 10.1063/1.110366 |
0.448 |
|
| 1993 |
Hovinen M, Ding J, Nurmikko AV, Grillo DC, Han J, He L, Gunshor RL. Blue-green laser emission from ZnSe quantum well microresonators Applied Physics Letters. 63: 3128-3130. DOI: 10.1063/1.110225 |
0.442 |
|
| 1993 |
Hagerott M, Ding J, Jeon H, Nurmikko AV, Fan Y, He L, Han J, Saraie J, Gunshor RL, Hua CG, Otsuka N. Green/yellow light emitting diodes from isoelectronically doped ZnSe quantum well structures Applied Physics Letters. 62: 2108-2110. DOI: 10.1063/1.109467 |
0.428 |
|
| 1993 |
Han J, Stavrinides TS, Kobayashi M, Gunshor RL, Hagerott MM, Nurmikko AV. Heavy p-doping of ZnTe by molecular beam epitaxy using a nitrogen plasma source Applied Physics Letters. 62: 840-842. DOI: 10.1063/1.108568 |
0.376 |
|
| 1993 |
Salokatve A, Jeon H, Ding J, Hovinen M, Nurmikko AV, Grillo DC, He L, Han J, Fan Y, Ringle M, Gunshor RL, Hua GC, Otsuka N. Continuous-wave, room temperature, ridge waveguide green-blue diode laser Electronics Letters. 29: 2192-2194. DOI: 10.1049/El:19931473 |
0.381 |
|
| 1993 |
Salokatve A, Jeon H, Hovinen M, Kelkar P, Nurmikko AV, Grillo DC, He L, Han J, Fan Y, Ringle M, Gunshor RL. Low voltage, room temperature, ridge waveguide green-blue diode laser Electronics Letters. 29: 2041-2042. DOI: 10.1049/El:19931363 |
0.405 |
|
| 1993 |
Nurmikko AV, Gunshor RL. Optical physics and laser devices in II-VI quantum confined heterostructures Physica B: Physics of Condensed Matter. 185: 16-26. DOI: 10.1016/0921-4526(93)90211-N |
0.443 |
|
| 1993 |
Gunshor RL, Nurmikko AV, Otsuka N. The molecular beam epitaxial growth of wide gap II-VI injection lasers and light-emitting diodes Thin Solid Films. 231: 190-196. DOI: 10.1016/0040-6090(93)90712-X |
0.381 |
|
| 1993 |
Xie W, Grillo DC, Kobayashi M, He L, Gunshor RL, Jeon H, Ding J, Nurmikko AV, Hua GC, Otsuka N. Blue and blue/green laser diodes and LED-based display devices Journal of Crystal Growth. 127: 287-290. DOI: 10.1016/0022-0248(93)90623-5 |
0.423 |
|
| 1993 |
Han J, Stavrinides TS, Kobayashi M, Gunshor RL, Hagerott MM, Nurmikko AV. Growth and characterization of ZnTe:N; p-ZnTe/n-AISb diodes Journal of Electronic Materials. 22: 485-488. DOI: 10.1007/Bf02661618 |
0.376 |
|
| 1993 |
Grillo DC, Xie W, Kobayashi M, Gunshor RL, Hua GC, Otsuka N, Jeon H, Ding J, Nurmikko AV. MBE growth and microstructural evaluation of Zn(S,Se)-based LEDs and diode lasers Journal of Electronic Materials. 22: 441-444. DOI: 10.1007/Bf02661610 |
0.446 |
|
| 1992 |
Nurmikko AV, Gunshor RL, Otsuka N, Kobayashi M. Blue and Green Laser Diodes and LEDs in ZnSe-Based Quantum Structures The Japan Society of Applied Physics. 342-344. DOI: 10.7567/Ssdm.1992.S-I-6 |
0.41 |
|
| 1992 |
Gunshor RL, Nurmikko AV, Otsuka N. Blue II-VI laser Diodes and light Emitting Diodes Mrs Proceedings. 281. DOI: 10.1557/PROC-281-539 |
0.332 |
|
| 1992 |
Xie W, Grillo DC, Kobayashi M, Gunshor RL, Jeon H, Ding J, Nurmikko AV, Hua GC, Otsuka N. The Mbe Growth of Widegap II-VI Injection Lasers and LEDs Mrs Proceedings. 242: 203. DOI: 10.1557/Proc-242-203 |
0.345 |
|
| 1992 |
Nurmikko AV, Gunshor RL. Quantum-confined structures and lasers in II-VI semiconductors in the blue-green Semiconductors. 1675: 222-236. DOI: 10.1117/12.137611 |
0.449 |
|
| 1992 |
Nurmikko AV, Gunshor RL, Kobayashi M. Quantum wells, excitons, and lasers at blue‐green wavelengths in ZnSe‐based heterostructures Journal of Vacuum Science & Technology B. 10: 2056-2061. DOI: 10.1116/1.586317 |
0.411 |
|
| 1992 |
Xie W, Grillo DC, Gunshor RL, Kobayashi M, Hua GC, Otsuka N, Jeon H, Ding J, Nurmikko AV. Blue/green injection lasers and light emitting diodes Journal of Vacuum Science & Technology B. 10: 921-923. DOI: 10.1116/1.586154 |
0.453 |
|
| 1992 |
Gunshor RL, Kobayashi M, Nurmikko AV. II – VI semiconductors come of age Physics World. 5: 46-49. DOI: 10.1088/2058-7058/5/3/31 |
0.37 |
|
| 1992 |
Fan Y, Han J, He L, Saraie J, Gunshor RL, Hagerott M, Jeon H, Nurmikko AV, Hua GC, Otsuka N. Graded band gap ohmic contact to p-ZnSe Applied Physics Letters. 61: 3160-3162. DOI: 10.1063/1.107945 |
0.371 |
|
| 1992 |
Xie W, Grillo DC, Gunshor RL, Kobayashi M, Jeon H, Ding J, Nurmikko AV, Hua GC, Otsuka N. Room temperature blue light emitting p-n diodes from Zn(S,Se)-based multiple quantum well structures Applied Physics Letters. 60: 1999-2001. DOI: 10.1063/1.107123 |
0.435 |
|
| 1992 |
Jeon H, Ding J, Nurmikko AV, Xie W, Grillo DC, Kobayashi M, Gunshor RL, Hua GC, Otsuka N. Blue and green diode lasers in ZnSe-based quantum wells Applied Physics Letters. 60: 2045-2047. DOI: 10.1063/1.107109 |
0.447 |
|
| 1992 |
Hagerott M, Jeon H, Nurmikko AV, Xie W, Grillo DC, Kobayashi M, Gunshor RL. Indium tin oxide as transparent electrode material for ZnSe-based blue quantum well light emitters Applied Physics Letters. 60: 2825-2827. DOI: 10.1063/1.106836 |
0.437 |
|
| 1992 |
Xie W, Grillo DC, Gunshor RL, Kobayashi M, Hua GC, Otsuka N, Jeon H, Ding J, Nurmikko AV. Blue/green pn junction electroluminescence from ZnSe-based multiple quantum-well structures Applied Physics Letters. 60: 463-465. DOI: 10.1063/1.106635 |
0.463 |
|
| 1992 |
Jeon H, Ding J, Nurmikko AV, Xie W, Kobayashi M, Gunshor RL. ZnSe based multilayer pn junctions as efficient light emitting diodes for display applications Applied Physics Letters. 60: 892-894. DOI: 10.1063/1.106496 |
0.438 |
|
| 1992 |
Li D, Nakamura Y, Otsuka N, Qiu J, Kobayashi M, Gunshor RL. Vacancy ordering at heterovalent interfaces Surface Science. 267: 181-186. DOI: 10.1016/0039-6028(92)91116-S |
0.329 |
|
| 1992 |
Xie W, Grillo DC, Kobayashi M, Gunshor RL, Hua GC, Otsuka N, Jeon H, Ding J, Nurmikko AV. ZnSe/Zn0.8Cd0.2Se quantum well LEDs and lasers Journal of Crystal Growth. 117: 1079-1079. DOI: 10.1016/0022-0248(92)90921-5 |
0.392 |
|
| 1992 |
Nurmikko AV, Gunshor RL, Kobayashi M. Optical properties and device prospects of ZnSe-based quantum structures Journal of Crystal Growth. 117: 432-440. DOI: 10.1016/0022-0248(92)90789-L |
0.438 |
|
| 1992 |
Nurmikko AV, Gunshor RL. Quantum Confined Structures and Coherent Light Emitters in II–VI Heterostructures Physica Status Solidi (B). 173: 291-305. DOI: 10.1002/Pssb.2221730129 |
0.422 |
|
| 1991 |
Rockwell B, Chandrasekhar HR, Chandrasekhar M, Ramdas AK, Kobayashi M, Gunshor RL. Pressure tuning of strains in semiconductor heterostructures: (ZnSe epilayer)/(GaAs epilayer). Physical Review. B, Condensed Matter. 44: 11307-11314. PMID 9999254 DOI: 10.1103/Physrevb.44.11307 |
0.305 |
|
| 1991 |
Gunshor RL, Kobayashi M, Otsuka N. Interface Properties of II-VI/III-V Heterostructures Mrs Proceedings. 221. DOI: 10.1557/Proc-221-303 |
0.379 |
|
| 1991 |
Kolodziejski LA, Gunshor RL, Nurmikko AV, Otsuka N. Molecular Beam Epitaxy Of Ii-Vi Based Heterostructures Acta Physica Polonica A. 79: 31-47. DOI: 10.12693/Aphyspola.79.31 |
0.444 |
|
| 1991 |
Menke DR, Qiu J, Gunshor RL, Kobayashi M, Li D, Nakamura Y, Otsuka N. An x-ray photoelectron spectroscopy study of bonding at II-VI/III-V heterovalent interfaces Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2171-2175. DOI: 10.1116/1.585759 |
0.373 |
|
| 1991 |
Li D, Nakamura Y, Otsuka N, Qiu J, Kobayashi M, Gunshor RL. Reconstruction at the Ga<inf>2</inf> Se<inf>3</inf>/GaAs epitaxial interface Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2167-2170. DOI: 10.1116/1.585758 |
0.33 |
|
| 1991 |
Jeon H, Ding J, Patterson W, Nurmikko AV, Xie W, Grillo DC, Kobayashi M, Gunshor RL. Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells Applied Physics Letters. 59: 3619-3621. DOI: 10.1063/1.105625 |
0.429 |
|
| 1991 |
Qiu J, Menke DR, Kobayashi M, Gunshor RL, Li D, Nakamura Y, Otsuka N. Characterization of Ga2Se3 at ZnSe/GaAs heterovalent interfaces Applied Physics Letters. 58: 2788-2790. DOI: 10.1063/1.104762 |
0.379 |
|
| 1991 |
Presser N, Kudlek G, Gutowski J, Menke DR, Kobayashi M, Gunshor RL. Nonlinear transmission of MBE-grown ZnSe epilayers in the near-band-edge region Superlattices and Microstructures. 10: 247-252. DOI: 10.1016/0749-6036(91)90240-R |
0.409 |
|
| 1991 |
Li D, Nakamura Y, Otsuka N, Qiu J, Kobayashi M, Gunshor RL. Reconstruction structure at Ga2Se3/GaAs epitaxial interface Journal of Crystal Growth. 111: 1038-1042. DOI: 10.1016/0022-0248(91)91128-W |
0.32 |
|
| 1991 |
Han J, Durbin SM, Gunshor RL, Kobayashi M, Menke DR, Pelekanos N, Hagerott M, Nurmikko AV, Nakamura Y, Otsuka N. Quantum wells with zincblende MnTe barriers Journal of Crystal Growth. 111: 767-771. DOI: 10.1016/0022-0248(91)91078-O |
0.43 |
|
| 1991 |
Qiu J, Menke DR, Kobayashi M, Gunshor RL, Qian QD, Li D, Otsuka N. ZnSe/GaAs heterovalent interfaces: interface microstructure versus electrical properties Journal of Crystal Growth. 111: 747-751. DOI: 10.1016/0022-0248(91)91074-K |
0.382 |
|
| 1991 |
Gunshor RL, Kobayashi M, Otsuka N, Nurmikko AV. Properties of II-VI/III-V heterovalent interfaces Journal of Crystal Growth. 115: 652-659. DOI: 10.1016/0022-0248(91)90821-L |
0.45 |
|
| 1990 |
Pelekanos N, Fu Q, Ding J, Wałecki W, Nurmikko AV, Durbin SM, Han J, Kobayashi M, Gunshor RL. Spectroscopy of CdTe/MnTe single quantum wells: A strained-layer II-VI heterostructure with strong electronic confinement Physical Review B. 41: 9966-9970. DOI: 10.1103/Physrevb.41.9966 |
0.438 |
|
| 1990 |
Kudlek G, Presser N, Gutowski J, Hingerl K, Sitter H, Durbin SM, Menke DR, Kobayashi M, Gunshor RL. Comparative optical investigations of ZnSe/GaAs epilayers grown by molecular beam and hot-wall epitaxy Journal of Applied Physics. 68: 5630-5635. DOI: 10.1063/1.346975 |
0.403 |
|
| 1990 |
Kudlek G, Hollandt J, Presser N, Gutowski J, Durbin SM, Menke DR, Kobayashi M, Gunshor RL. Thermally induced optical bistability in ZnSe epilayers grown by molecular-beam epitaxy Journal of Applied Physics. 68: 2532-2534. DOI: 10.1063/1.346475 |
0.333 |
|
| 1990 |
Walecki W, Patterson WR, Nurmikko AV, Luo H, Samarth N, Furdyna JK, Kobayashi M, Durbin S, Gunshor RL. Ultraviolet and blue holographic lithography of ZnSe epilayers and heterostructures with feature size to 100 nm and below Applied Physics Letters. 57: 2641-2643. DOI: 10.1063/1.103810 |
0.344 |
|
| 1990 |
Li D, Gonsalves JM, Otsuka N, Qiu J, Kobayashi M, Gunshor RL. Structure of the ZnSe/GaAs heteroepitaxial interface Applied Physics Letters. 57: 449-451. DOI: 10.1063/1.103662 |
0.379 |
|
| 1990 |
Qiu J, Qian QD, Gunshor RL, Kobayashi M, Menke DR, Li D, Otsuka N. Influence of GaAs surface stoichiometry on the interface state density of as-grown epitaxial ZnSe/epitaxial GaAs heterostructures Applied Physics Letters. 56: 1272-1274. DOI: 10.1063/1.102534 |
0.382 |
|
| 1990 |
Gunshor RL, Kolodziejski LA, Nurmikko AV, Otsuka N. Chapter 6 Molecular-Beam Epitaxy of II-VI Semiconductor Microstructures Semiconductors and Semimetals. 33: 337-409. DOI: 10.1016/S0080-8784(08)62656-3 |
0.382 |
|
| 1990 |
Kudlek G, Hollandt J, Presser N, Gutowski J, Menke DR, Kobayashi M, Gunshor RL. Long-term stable thermally induced absorptive optical bistability in MBE-grown ZnSe epilayers Superlattices and Microstructures. 8: 381-385. DOI: 10.1016/0749-6036(90)90335-5 |
0.312 |
|
| 1990 |
Fu Q, Pelekanos N, Nurmikko AV, Durbin S, Han J, Sungki O, Menke D, Kobayashi M, Gunshor RL. Strong confinement effects in CdTe/MnTe quantum wells: A new strained layer binary II-VI heterostructure Surface Science. 229: 148-150. DOI: 10.1016/0039-6028(90)90856-4 |
0.427 |
|
| 1990 |
Mathine DL, Durbin SM, Gunshor RL, Kobayashi M, Menke DR, Gonsalves J, Otsuka N, Fu Q, Hagerott M, Nurmikko AV. Molecular beam epitaxy of pseudomorphic ZnTe/AlSb/GaSb Surface Science. 228: 344-346. DOI: 10.1016/0039-6028(90)90324-2 |
0.394 |
|
| 1990 |
Otsuka N, Li D, Gonsalves JM, Choi C, Kobayashi M, Kolodziejski LA, Gunshor RL. Transmission electron microscope study of II-VI/III-V semiconductor interfaces Surface Science. 228: 96-101. DOI: 10.1016/0039-6028(90)90267-C |
0.384 |
|
| 1990 |
Durbin S, Kobayashi M, Fu Q, Pelekanos N, Gunshor RL, Nurmikko AV. ZnTe/MnTe: A new metastable wide gap II-VI heterostructure Surface Science. 228: 33-36. DOI: 10.1016/0039-6028(90)90252-4 |
0.39 |
|
| 1990 |
Kudlek G, Presser N, Gutowski J, Durbin S, Menke D, Kobayashi M, Gunshor RL. High-density luminescence and excitation spectroscopy of MBE-grown ZnSe/GaAs epilayers Journal of Crystal Growth. 101: 667-672. DOI: 10.1016/0022-0248(90)91055-U |
0.353 |
|
| 1990 |
Pelekanos N, Fu Q, Nurmikko AV, Durbin S, Han J, Sungki O, Menke D, Kobayashi M, Gunshor RL. Spectroscopy in CdTe/MnTe and ZnTe/MnTe single quantum wells; new binary wide gap II-VI heterostructures Journal of Crystal Growth. 101: 628-631. DOI: 10.1016/0022-0248(90)91050-Z |
0.441 |
|
| 1990 |
Gunshor RL, Nurmikko AV, Kolodziejski LA, Kobayashi M, Otsuka N. Wide-gap II-VI heterostructures Journal of Crystal Growth. 101: 14-22. DOI: 10.1016/0022-0248(90)90930-J |
0.43 |
|
| 1990 |
Gunshor RL, Kobayashi M, Kolodziejski LA, Otsuka N, Nurmikko AV. MBE of wide bandgap II-VI compounds Journal of Crystal Growth. 99: 390-398. DOI: 10.1016/0022-0248(90)90550-5 |
0.43 |
|
| 1990 |
Presser N, Kudlek G, Gutowski J, Durbin SM, Menke DR, Kobayashi M, Gunshor RL. High‐Density Spectroscopy of ZnSe/GaAs Epilayers in the Near‐Band‐Edge Region Physica Status Solidi (B). 159: 443-448. DOI: 10.1002/Pssb.2221590152 |
0.405 |
|
| 1990 |
Nurmikko AV, Gunshor RL. Excitons and Phonons in CdTe/MnTc and ZnTe/MnTc Single Quantum Wells. Aspects of Confinement and Optical Phonon Coupling Physica Status Solidi (B). 159: 107-115. DOI: 10.1002/Pssb.2221590112 |
0.415 |
|
| 1990 |
Pelekanos N, Ding J, Fu Q, Nurmikko AV, Kobayashi M, Gunshor RL. Hot exciton luminescence in ZnTe/MnTe quantum wells Xvii International Conference On Quantum Electronics. Digest Of. 82-84. |
0.305 |
|
| 1990 |
Fu Q, Pelekanos N, Nurmikko AV, Durbin S, Han J, Kobayashi M, Gunshor RL. Radiative recombination in CdTe/MnTe quantum wells: Emission from near infrared to blue wavelengths Xvii International Conference On Quantum Electronics. Digest Of. 60-61. |
0.326 |
|
| 1989 |
Fu Q, Lee D, Nurmikko AV, Kolodziejski LA, Gunshor RL. Isoelectronic delta doping in a ZnSe superlattice: Tellurium as an efficient hole trap. Physical Review. B, Condensed Matter. 39: 3173-3177. PMID 9948616 DOI: 10.1103/Physrevb.39.3173 |
0.346 |
|
| 1989 |
Li D, Otsuka N, Qiu J, Glenn J, Kobayashi M, Gunshor RL. Transmission Electron Microscopy of II-VI/III-V Semiconductor Heteroepitaxial Interfaces Mrs Proceedings. 161: 127. DOI: 10.1557/Proc-161-127 |
0.307 |
|
| 1989 |
Mathine DL, Durbin SM, Gunshor RL, Kobayashi M, Menke DR, Pei Z, Gonsalves J, Otsuka N, Fu Q, Hagerott M, Nurmikko AV. Pseudomorphic ZnTe/AlSb/GaSb heterostructures by molecular beam epitaxy Applied Physics Letters. 55: 268-270. DOI: 10.1557/Proc-161-121 |
0.398 |
|
| 1989 |
Gunshor RL, Kolodziejski LA, Kobayashi M, Nurmikko AV, Otsuka N. Metastable Zincblende MnTe and MnSe: MBE Growth and Characterization Mrs Proceedings. 151: 141. DOI: 10.1557/Proc-151-141 |
0.403 |
|
| 1989 |
Gonsalves JM, Otsuka N, Qiu J, Kobayashi M, Gunshor RL, Kolodziejski LA. Electron Microscope Study of Initial Stage of Growth of ZnSe on GaAs Mrs Proceedings. 139: 375. DOI: 10.1557/Proc-139-375 |
0.309 |
|
| 1989 |
Gunshor RL, Kolodziejski LA, Kobayashi M, Otsuka N, Nurmikko AV. II-VI/III-V heterostructures: Epilayer-on-epilayer structures Proceedings of Spie - the International Society For Optical Engineering. 1037: 78-85. DOI: 10.1117/12.951017 |
0.34 |
|
| 1989 |
Vaziri M, Reifenberger R, Gunshor RL, Kolodziejski LA, Venkatesan S, Pierret RF. Electrical and optical characterization of molecular‐beam epitaxy grown Ga‐doped ZnSe. Journal of Vacuum Science & Technology B. 7: 253-258. DOI: 10.1116/1.584728 |
0.382 |
|
| 1989 |
Glenn JL, O S, Kolodziejski LA, Gunshor RL, Kobayashi M, Li D, Otsuka N, Haggerott M, Pelekanos N, Nurmikko AV. Molecular‐beam epitaxy of InSb/CdTe heterostructures Journal of Vacuum Science & Technology B. 7: 249-252. DOI: 10.1116/1.584727 |
0.439 |
|
| 1989 |
Qian QD, Qiu J, Kobayashi M, Gunshor RL, Melloch MR, Cooper JA. Electrical characterization of an epitaxial ZnSe/epitaxial GaAs heterointerface Journal of Vacuum Science & Technology B. 7: 793-798. DOI: 10.1116/1.584602 |
0.39 |
|
| 1989 |
Venkatesan S, Pierret RF, Qiu J, Kobayashi M, Gunshor RL, Kolodziejski LA. Deep levels in Ga-doped ZnSe grown by molecular-beam epitaxy Journal of Applied Physics. 66: 3656-3660. DOI: 10.1063/1.344077 |
0.338 |
|
| 1989 |
Durbin SM, Han J, Sungki O, Kobayashi M, Menke DR, Gunshor RL, Fu Q, Pelekanos N, Nurmikko AV, Li D, Gonsalves J, Otsuka N. Zinc-blende MnTe: Epilayers and quantum well structures Applied Physics Letters. 55: 2087-2089. DOI: 10.1063/1.102091 |
0.455 |
|
| 1989 |
Qian QD, Qiu J, Melloch MR, Cooper JA, Kolodziejski LA, Kobayashi M, Gunshor RL. Low interface state density at an epitaxial ZnSe/epitaxial GaAs interface Applied Physics Letters. 54: 1359-1361. DOI: 10.1063/1.100715 |
0.365 |
|
| 1989 |
Lee D, Fu Q, Nurmikko AV, Kolodziejski LA, Gunshor RL. Widely tunable exciton radiative recombination rate in ZnSe based superlattice structures Superlattices and Microstructures. 5: 345-349. DOI: 10.1016/0749-6036(89)90313-3 |
0.385 |
|
| 1989 |
Nurmikko AV, Kolodziejski LA, Gunshor RL. Physics and engineering of diluted magnetic semiconductor superlattices Journal of Crystal Growth. 95: 589-593. DOI: 10.1016/0022-0248(89)90472-7 |
0.386 |
|
| 1989 |
Qian QD, Qiu J, Glenn JL, O S, Gunshor RL, Kolodziejski LA, Kobayashi M, Otsuka N, Melloch MR, Cooper JA, Haggerott M, Heyen T, Nurmikko AV. II-VI/III-V heterointerfaces: Epilayer-on-epilayer structures Journal of Crystal Growth. 95: 567-571. DOI: 10.1016/0022-0248(89)90468-5 |
0.399 |
|
| 1989 |
Venkatasubramanian R, Otsuka N, Qiu J, Kolodziejski LA, Gunshor RL. Incorporation processes in MBE growth of ZnSe Journal of Crystal Growth. 95: 533-537. DOI: 10.1016/0022-0248(89)90460-0 |
0.312 |
|
| 1988 |
Chang S, Nurmikko AV, Wu J, Kolodziejski LA, Gunshor RL. Band offsets and excitons in CdTe/(Cd,Mn)Te quantum wells. Physical Review. B, Condensed Matter. 37: 1191-1198. PMID 9944626 DOI: 10.1103/Physrevb.37.1191 |
0.378 |
|
| 1988 |
Fu Q, Lee D, Mysyrowicz A, Nurmikko AV, Gunshor RL, Kolodziejski LA. Excitonic molecules in ZnSe quantum wells. Physical Review. B, Condensed Matter. 37: 8791-8794. PMID 9944244 DOI: 10.1103/Physrevb.37.8791 |
0.343 |
|
| 1988 |
Gunshor RL, Kolodziejski LA. Recent Advances in the Molecular Beam Epitaxy of the Widebandgap Semiconductor ZnSe and Its Superlattices Ieee Journal of Quantum Electronics. 24: 1744-1757. DOI: 10.1109/3.7104 |
0.349 |
|
| 1988 |
Kolodziejski LA, Gunshor RL, Fu Q, Lee D, Nurmikko AV, Gonsalves JM, Otsuka N. Excitonic trapping from atomic layer epitaxial ZnTe within ZnSe/(Zn,Mn)Se heterostructures Applied Physics Letters. 52: 1080-1082. DOI: 10.1063/1.99217 |
0.409 |
|
| 1988 |
Studtmann GD, Gunshor RL, Kolodziejski LA, Melloch MR, Cooper JA, Pierret RF, Munich DP, Choi C, Otsuka N. Pseudomorphic ZnSe/n-GaAs doped-channel field-effect transistors by interrupted molecular beam epitaxy Applied Physics Letters. 52: 1249-1251. DOI: 10.1063/1.99171 |
0.355 |
|
| 1987 |
Bhattacharya P, Burnham R, Chemla D, Dohler G, Gibbs HM, Majerfeld A, Smith PW, Stillman G, Temkin H, Gunshor RL. III. Multiple-quantum wells. Applied Optics. 26: 216-20. PMID 20454113 DOI: 10.1364/Ao.26.000216 |
0.347 |
|
| 1987 |
Kolodziejski LA, Gunshor RL, Otsuka N, Nurmikko AV. II–VI / III–V Heterostructures Mrs Proceedings. 102. DOI: 10.1557/Proc-102-113 |
0.425 |
|
| 1987 |
Gunshor RL, Kolodziejski LA, Otsuka N, Nurmikko CF. Growth and characterization of wide gap ii-vi heterostructures Proceedings of Spie - the International Society For Optical Engineering. 797: 158-170. DOI: 10.1117/12.941038 |
0.302 |
|
| 1987 |
Studtmann GS, Gunshor RL, Kolodziejski LA, Melloch MR, Otsuka N, Munich DP, Cooper JA, Pierret RF. VA-8 Pseudomorphic ZnSe/GaAs MISFET Devices Ieee Transactions On Electron Devices. 34: 2378. DOI: 10.1109/T-Ed.1987.23299 |
0.31 |
|
| 1987 |
Bonsett TC, Yamanishi M, Gunshor RL, Datta S, Kolodziejski LA. Polarization-dependent optical gain and absorption spectra of (Cd,Mn)Te and (Zn,Mn)Se multiple quantum well structures Applied Physics Letters. 51: 499-501. DOI: 10.1063/1.98988 |
0.364 |
|
| 1987 |
Fu Q, Nurmikko AV, Kolodziejski LA, Gunshor RL, Wu JW. Electric field induced shifts in exciton luminescence in ZnSe/(Zn,Mn)Se superlattices Applied Physics Letters. 51: 578-580. DOI: 10.1063/1.98353 |
0.415 |
|
| 1987 |
Chang SK, Nakata H, Nurmikko AV, Gunshor RL, Kolodziejski LA. Resonant Raman scattering and exciton-optical phonon coupling in CdTe/(Cd,Mn)Te quantum wells Applied Physics Letters. 51: 667-669. DOI: 10.1063/1.98328 |
0.38 |
|
| 1987 |
Gunshor RL, Kolodziejski LA, Melloch MR, Vaziri M, Choi C, Otsuka N. Nucleation and characterization of pseudomorphic ZnSe grown on molecular beam epitaxially grown GaAs epilayers Applied Physics Letters. 50: 200-202. DOI: 10.1063/1.98247 |
0.385 |
|
| 1987 |
Chang SK, Lee D, Nakata H, Nurmikko AV, Kolodziejski LA, Gunshor RL. Frustrated antiferromagnetism at heterointerfaces in a semiconductor superlattice: MnSe/ZnSe Journal of Applied Physics. 62: 4835-4838. DOI: 10.1063/1.338987 |
0.371 |
|
| 1987 |
Bylsma RB, Kossut J, Becker WM, Kolodziejski LA, Gunshor RL, Frohne R. Photoluminescence and excitation spectra of Zn1- xMnxSe films and superlattices grown by molecular-beam epitaxy Journal of Applied Physics. 61: 3011-3019. DOI: 10.1063/1.337851 |
0.404 |
|
| 1987 |
Chang S-, Nurmikko AV, Wu J, Kolodziejski LA, Gunshor RL. DETERMINATION OF BANDOFFSETS AND EXCITON BINDING IN CdTe/(Cd,Mn)Te QUANTUM WELLS Le Journal De Physique Colloques. 48. DOI: 10.1051/Jphyscol:1987579 |
0.351 |
|
| 1987 |
Chang S-, Nakata H, Nurmikko AV, Kolodziejski LA, Gunshor RL. RESONANT RAMAN SCATTERING AND EXCITON-PHONON INTERACTION IN CdTe / (Cd,Mn)Te QUANTUM WELLS Le Journal De Physique Colloques. 48. DOI: 10.1051/Jphyscol:1987574 |
0.353 |
|
| 1987 |
Lee D, Chang S-, Nakata H, Nurmikko AV, Kolodziejski LA, Gunshor RL. MAGNETIC AND ELECTRONIC ASPECTS OF MnSe/ZnSe SUPERLATTICES NEAR MONOLAYER LIMIT Le Journal De Physique Colloques. 48. DOI: 10.1051/Jphyscol:1987567 |
0.36 |
|
| 1987 |
Gunshor RL, Kolodziejski LA, Otsuka N, Gu BP, Lee D, Hefetz Y, Nurmikko AV. 2D metastable magnetic semiconductor superlattices Superlattices and Microstructures. 3: 5-8. DOI: 10.1016/0749-6036(87)90167-4 |
0.39 |
|
| 1987 |
Kolodziejski LA, Gunshor RL, Otsuka N, Gu BP, Hefetz Y, Nurmikko AV. Use of Rheed oscillations for the growth of 2D magnetic semiconductor superlattices (MnSe/ZnSe) Journal of Crystal Growth. 81: 491-494. DOI: 10.1016/0022-0248(87)90439-8 |
0.356 |
|
| 1987 |
Studtmann GS, Gunshor RL, Kolodziejski LA, Melloch MR, Otsuka N, Munich DP, Cooper JA, Pierret RF. PSEUDOMORPHIC ZNSE/GAAS MISFET DEVICES Ieee Transactions On Electron Devices. |
0.342 |
|
| 1986 |
Chang S, Nurmikko AV, Kolodziejski LA, Gunshor RL. Differences in optical properties of (111) and (100) CdTe/(Cd,Mn)Te superlattices. Physical Review. B, Condensed Matter. 33: 2589-2593. PMID 9938597 DOI: 10.1103/Physrevb.33.2589 |
0.3 |
|
| 1986 |
Fu Q, Nurmikko AV, Kolodziejski LA, Gunshor RL. Influence of Electric Fields on Exciton Luminescence in ZnSe/(Zn,Mn)Se Superlattices Mrs Proceedings. 89: 293. DOI: 10.1557/Proc-89-293 |
0.307 |
|
| 1986 |
Gunshor RL, Kolodziejski LA, Otsuka N, Datta S, Nurmikko AV. Submicron Heterostructures of Diluted Magnetic Semiconductors Mrs Proceedings. 89: 249. DOI: 10.1557/Proc-89-249 |
0.423 |
|
| 1986 |
Lee D, Chang S-, Nakata H, Nurmikko AV, Kolodziejski LA, Gunshor RL. Anomalous Magneto-Optical and Magnetic Behavior in a Two-Dimensional Magnetic Semiconductor Superlattice MnSe/ZnSe Mrs Proceedings. 77. DOI: 10.1557/Proc-77-253 |
0.332 |
|
| 1986 |
Otsuka N, Choi C, Kolodziejski LA, Gunshor RL. ELECTRON DIFFRACTION STUDY OF MULTILAYER STRUCTURES WITH PARTIALLY COHERENT ILLUMINATION Materials Research Society Symposia Proceedings. 62: 65-71. DOI: 10.1557/Proc-62-65 |
0.343 |
|
| 1986 |
Nurmikko AV, Hefetz Y, Chang S‐, Kolodziejski LA, Gunshor RL. Influence of heterointerfaces on optical properties of CdTe/(Cd,Mn)Te and ZnSe/(Zn,Mn)Se superlattices Journal of Vacuum Science & Technology B. 4: 1033-1036. DOI: 10.1116/1.583575 |
0.399 |
|
| 1986 |
Nurmikko A, Gunshor R, Kolodziejski L. Optical properties of CdTe/(Cd, Mn)Te multiple quantum wells Ieee Journal of Quantum Electronics. 22: 1785-1792. DOI: 10.1109/Jqe.1986.1073170 |
0.429 |
|
| 1986 |
Kolodziejski LA, Gunshor RL, Otsuka N, Datta S, Becker WM, Nurmikko AV. Wide-Gap II-VI Superlattices Ieee Journal of Quantum Electronics. 22: 1666-1676. DOI: 10.1109/Jqe.1986.1073169 |
0.436 |
|
| 1986 |
Kolodziejski LA, Gunshor RL, Otsuka N, Gu BP, Hefetz Y, Nurmikko AV. Two-dimensional metastable magnetic semiconductor structures Applied Physics Letters. 48: 1482-1484. DOI: 10.1063/1.96896 |
0.391 |
|
| 1986 |
Andersen DR, Kolodziejski LA, Gunshor RL, Datta S, Kaplan AE, Nurmikko AV. Nonlinear excitonic absorption in (Zn,Mn)Se superlattices and ZnSe films Applied Physics Letters. 48: 1559-1561. DOI: 10.1063/1.96866 |
0.369 |
|
| 1986 |
Hefetz Y, Goltsos WC, Nurmikko AV, Kolodziejski LA, Gunshor RL. Exciton formation and energy exchange with d-electron states in ZnSe/(Zn,Mn)Se multiple quantum wells Applied Physics Letters. 48: 372-374. DOI: 10.1063/1.96556 |
0.41 |
|
| 1986 |
Hefetz Y, Goltsos WC, Lee D, Nurmikko AV, Kolodziejski LA, Gunshor RL. Electronic energy states and relaxation in ZnSe Zn1-xMnxSe superlattices Superlattices and Microstructures. 2: 455-458. DOI: 10.1016/0749-6036(86)90011-X |
0.424 |
|
| 1986 |
Nurmikko AV, Zhang XC, Chang SK, Kolodziejski LA, Gunshor RL, Datta S. Quasi-two-dimensional exciton-polaron in CdTe/(Cd, Mn)Te quantum wells Surface Science. 170: 665-670. DOI: 10.1016/0039-6028(86)91037-X |
0.383 |
|
| 1986 |
Gunshor RL, Kolodziejski LA, Otsuka N, Datta S. ZnSe-ZnMnSe and CdTe-CdMnTe superlattices Surface Science. 174: 522-533. DOI: 10.1016/0039-6028(86)90464-4 |
0.393 |
|
| 1986 |
Zhang XC, Hefetz Y, Chang SK, Nakahara J, Nurmikko AV, Kolodziejski LA, Gunshor RL, Datta S. Excitons and their kinetics in CdTe/(Cd, Mn)Te and ZnSe/(Zn, Mn)Se quantum wells Surface Science. 174: 292-298. DOI: 10.1016/0039-6028(86)90424-3 |
0.417 |
|
| 1985 |
Datta S, Melloch MR, Gunshor RL. Possibility of an excitonic ground state in quantum wells. Physical Review. B, Condensed Matter. 32: 2607-2609. PMID 9937337 DOI: 10.1103/Physrevb.32.2607 |
0.378 |
|
| 1985 |
Zhang X, Chang S, Nurmikko AV, Kolodziejski LA, Gunshor RL, Datta S. Interface localization of excitons in CdTe/Cd1-xMnxTe multiple quantum wells. Physical Review. B, Condensed Matter. 31: 4056-4059. PMID 9936320 DOI: 10.1103/Physrevb.31.4056 |
0.401 |
|
| 1985 |
Kolodziejski LA, Gunshor RL, Datta S, Bonsett TC, Yamanishi M, Frohne R, Sakamoto T, Bylsma RB, Becker WM, Otsuka N. MBE growth of films and superlattices of diluted magnetic semiconductors Journal of Vacuum Science & Technology B. 3: 714-717. DOI: 10.1116/1.583122 |
0.389 |
|
| 1985 |
Zhang X‐, Chang S‐, Nurmikko AV, Kolodziejski LA, Gunshor RL, Datta S. Excitonic recombination at the CdTe/(Cd,Mn)Te heterointerface Journal of Vacuum Science & Technology B. 3: 1300-1302. DOI: 10.1116/1.583016 |
0.374 |
|
| 1985 |
Zhang XC, Chang SK, Nurmikko AV, Kolodziejski LA, Gunshor RL, Datta S. Time-resolved exciton recombination in CdTe/Cd1-xMn xTe multiple quantum wells Applied Physics Letters. 47: 59-61. DOI: 10.1063/1.96404 |
0.384 |
|
| 1985 |
Bylsma RB, Becker WM, Bonsett TC, Kolodziejski LA, Gunshor RL, Yamanishi M, Datta S. Stimulated emission and laser oscillations in ZnSe-Zn1-xMn xSe multiple quantum wells at ∼453 nm Applied Physics Letters. 47: 1039-1041. DOI: 10.1063/1.96371 |
0.442 |
|
| 1985 |
Kolodziejski LA, Gunshor RL, Bonsett TC, Venkatasubramanian R, Datta S, Bylsma RB, Becker WM, Otsuka N. Wide gap II-VI superlattices of ZnSe-Zn1-xMnxSe Applied Physics Letters. 47: 169-171. DOI: 10.1063/1.96251 |
0.401 |
|
| 1985 |
Kolodziejski LA, Gunshor RL, Otsuka N, Zhang XC, Chang SK, Nurmikko AV. (100) superlattices of CdTe-Cd0.76Mn0.24Te on (100)GaAs Applied Physics Letters. 47: 882-884. DOI: 10.1063/1.95964 |
0.396 |
|
| 1985 |
Hefetz Y, Nakahara J, Nurmikko AV, Kolodziejski LA, Gunshor RL, Datta S. Optical properties of ZnSe/(Zn,Mn)Se multiquantum wells Applied Physics Letters. 47: 989-991. DOI: 10.1063/1.95953 |
0.37 |
|
| 1985 |
Otsuka N, Kolodziejski LA, Gunshor RL, Datta S, Bicknell RN, Schetzina JF. High resolution electron microscope study of epitaxial CdTe-GaAs interfaces Applied Physics Letters. 46: 860-862. DOI: 10.1063/1.95865 |
0.376 |
|
| 1985 |
Nurmikko AV, Zhang XC, Chang SK, Kolodziejski LA, Gunshor RL, Datta S. Excitons in CdTe/Cd1-xMnxTe multiquantum wells Journal of Luminescence. 34: 89-97. DOI: 10.1016/0022-2313(85)90098-5 |
0.362 |
|
| 1985 |
Gunshor RL, Otsuka N, Yamanishi M, Kolodziejski LA, Bonsett TC, Bylsma RB, Datta S, Becker WM, Furdyna JK. Diluted magnetic semiconductor superlattices Journal of Crystal Growth. 72: 294-298. DOI: 10.1016/0022-0248(85)90161-7 |
0.396 |
|
| 1984 |
Otsuka N, Kolodziejski LA, Gunshor RL, Datta S, Bicknell RN, Schetzina JF. Observation of the CdTe-GaAs Interface by High Resolution Electron Microscopy Mrs Proceedings. 37: 449. DOI: 10.1557/Proc-37-449 |
0.378 |
|
| 1984 |
Venugopalan S, Kolodziejski LA, Gunshor RL, Ramdas AK. Raman scattering from molecular beam epitaxially grown superlattices of diluted magnetic semiconductors Applied Physics Letters. 45: 974-976. DOI: 10.1063/1.95469 |
0.352 |
|
| 1984 |
Kolodziejski LA, Bonsett TC, Gunshor RL, Datta S, Bylsma RB, Becker WM, Otsuka N. Molecular beam epitaxy of diluted magnetic semiconductor (Cd 1-xMnxTe) superlattices Applied Physics Letters. 45: 440-442. DOI: 10.1063/1.95223 |
0.403 |
|
| 1984 |
Kolodziejski LA, Sakamoto T, Gunshor RL, Datta S. Molecular beam epitaxy of Cd1-xMnxTe Applied Physics Letters. 44: 799-801. DOI: 10.1063/1.94890 |
0.33 |
|
| 1983 |
Turner AE, Gunshor RL, Datta S. New class of materials for optical isolators. Applied Optics. 22: 3152. PMID 18200170 DOI: 10.1364/Ao.22.003152 |
0.304 |
|
| 1983 |
Martin SJ, Schwartz SS, Gunshor RL, Pierret RF. Surface acoustic wave resonators on a ZnO-on-Si layered medium Journal of Applied Physics. 54: 561-569. DOI: 10.1063/1.332060 |
0.322 |
|
| 1978 |
Elliott JK, Gunshor RL, Pierret RF, Day AR. A wideband SAW convolver utilizing Sezawa waves in the metal-ZnO-SiO 2-Si configuration Applied Physics Letters. 32: 515-516. DOI: 10.1063/1.90139 |
0.304 |
|
| 1976 |
Harada H, Gunshor RL. Two-layer interdigital transducer for acoustic-surface-wave devices Electronics Letters. 12: 82-84. DOI: 10.1049/El:19760066 |
0.302 |
|
| Show low-probability matches. |
