Year |
Citation |
Score |
2005 |
Vaniš J, Chow DH, Šroubek F, McGill TC, Walachová J. Characterization of InAs/AlSb tunneling double barrier heterostructure by reverse electron emission spectroscopy with InAs as base electrode: Characterization of InAs/AlSb tunneling double barrier heterostructure Physica Status Solidi (C). 2: 1444-1448. DOI: 10.1002/Pssc.200460483 |
0.331 |
|
2005 |
Vaniš J, Chow DH, Šroubek F, McGill TC, Walachová J. Characterization of InAs/AlSb tunneling double barrier heterostructure by reverse electron emission spectroscopy with InAs as base electrode Physica Status Solidi C: Conferences. 2: 1444-1448. DOI: 10.1002/Pssc.200306238 |
0.361 |
|
2004 |
Preisler EJ, Strittmatter RP, McGill TC, Hill CJ. Nitridation of epitaxially grown 6.1 Å semiconductors studied by X-ray photoelectron spectroscopy Applied Surface Science. 222: 6-12. DOI: 10.1016/J.Apsusc.2003.08.017 |
0.777 |
|
2003 |
Preisler EJ, Brooke J, Oldham NC, McGill TC. Pulsed laser deposition growth of Fe[sub 3]O[sub 4] on III–V semiconductors for spin injection Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 1745. DOI: 10.1116/1.1588648 |
0.373 |
|
2003 |
Cartoixà X, Ting DZY, McGill TC. Description of bulk inversion asymmetry in the effective-bond-orbital model Physical Review B - Condensed Matter and Materials Physics. 68: 2353191-2353197. DOI: 10.1103/Physrevb.68.235319 |
0.313 |
|
2003 |
Cartoixá X, Ting DZY, McGill TC. An efficient multiband envelope function approximation method for spintronics Nanotechnology. 14: 308-311. DOI: 10.1088/0957-4484/14/2/340 |
0.336 |
|
2003 |
Strittmatter RP, Beach RA, Picus GS, McGill TC. Piezoelectrically enhanced capacitive strain sensors using GaN metal-insulator-semiconductor diodes Journal of Applied Physics. 94: 5958-5963. DOI: 10.1063/1.1611267 |
0.669 |
|
2003 |
Strittmatter RP, Beach RA, Brooke J, Preisler EJ, Picus GS, McGill TC. GaN Schottky diodes for piezoelectric strain sensing Journal of Applied Physics. 93: 5675-5681. DOI: 10.1063/1.1558960 |
0.768 |
|
2003 |
Preisler EJ, Brooke J, Oldham NC, McGill TC. Pulsed laser deposition growth of Fe3O4 on III-V semiconductors for spin injection Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1745-1748. |
0.747 |
|
2002 |
Oldham NC, Hill CJ, Garland CM, McGill TC. Deposition of Ga2O3-x ultrathin films on GaAs by e-beam evaporation Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 20: 809-813. DOI: 10.1116/1.1469011 |
0.767 |
|
2001 |
Preisler EJ, Marsh OJ, Beach RA, McGill TC. Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1611-1618. DOI: 10.1116/1.1387464 |
0.786 |
|
2001 |
Strittmatter RP, Beach RA, McGill TC. Fabrication of GaN suspended microstructures Applied Physics Letters. 78: 3226-3228. DOI: 10.1063/1.1364504 |
0.663 |
|
2001 |
Cartoixà X, Ting DZY, Daniel ES, McGill TC. Theoretical investigations of spin splittings in asymmetric AlSb/InAs/GaSb heterostructures and the possibility of electric field induced magnetization Superlattices and Microstructures. 30: 309-319. DOI: 10.1006/Spmi.2002.1021 |
0.304 |
|
2000 |
Jones JT, Bridger PM, Marsh OJ, McGill TC. Localized charge storage in CeO2/Si(111) by electrostatic force microscopy Materials Research Society Symposium - Proceedings. 584: 331-335. DOI: 10.1557/Proc-584-331 |
0.312 |
|
2000 |
Ting DZY, McGill TC, Chen NY, Wang JN, Li RG, Wang YQ, Ge WK, Schulman JN. Effects of interface roughness and embedded nanostructures on device properties Materials Research Society Symposium - Proceedings. 584: 223-232. DOI: 10.1557/Proc-584-223 |
0.328 |
|
2000 |
Hill CJ, Beach RA, McGill TC. Nickel layers on indium arsenide Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 2044-2046. DOI: 10.1116/1.1306283 |
0.692 |
|
2000 |
Daniel ES, Cartoixà X, Frensley WR, Ting DZY, McGill TC. Coupled drift-diffusion/quantum transmitting boundary method simulations of thin oxide devices with specific application to a silicon based tunnel switch diode Ieee Transactions On Electron Devices. 47: 1052-1060. DOI: 10.1109/16.841240 |
0.338 |
|
2000 |
Cheng XC, Cartoixà X, Barton MA, Hill CJ, McGill TC. Tunnel switch diode based on ALSb/GaSb heterojunctions Journal of Applied Physics. 88: 6948-6950. DOI: 10.1063/1.1317236 |
0.35 |
|
2000 |
Bandić ZZ, Bridger PM, Piquette EC, McGill TC. Values of minority carrier diffusion lengths and lifetimes in GaN and their implications for bipolar devices Solid-State Electronics. 44: 221-228. DOI: 10.1016/S0038-1101(99)00227-0 |
0.732 |
|
2000 |
Cheng XC, McGill TC. Molecular beam epitaxy growth of antimonide avalanche photodetectors with InAs/AlSb superlattice as the n-type layer Journal of Crystal Growth. 208: 183-188. DOI: 10.1016/S0022-0248(99)00393-0 |
0.423 |
|
1999 |
Beach RA, Piquette EC, McGill TC, Watson TJ. XPS study of oxygen adsorption on (3X3) reconstructed mbe grown gan surfaces Materials Research Society Symposium - Proceedings. 537. DOI: 10.1557/S1092578300003197 |
0.68 |
|
1999 |
Piquette EC, Bridger PM, Beach RA, McGill TC. Effect of buffer layer and III/V ratio on the surface morphology of GaN grown by MBE Materials Research Society Symposium - Proceedings. 537. DOI: 10.1557/S1092578300002829 |
0.706 |
|
1999 |
Beach RA, McGill TC. Piezoelectric fields in nitride devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 17: 1753-1756. DOI: 10.1116/1.590820 |
0.692 |
|
1999 |
Bridger PM, Bandić ZZ, Piquette EC, McGill TC. Electric force microscopy of induced charges and surface potentials in GaN modified by light and strain Journal of Vacuum Science & Technology B. 17: 1750-1752. DOI: 10.1116/1.590819 |
0.71 |
|
1999 |
Piquette EC, Bridger PM, Bandić ZZ, McGill TC. Morphology, polarity, and lateral molecular beam epitaxy growth of GaN on sapphire Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 1241. DOI: 10.1116/1.590730 |
0.723 |
|
1999 |
Cheng X, McGill TC. Near infrared avalanche photodiodes with bulk Al0.04Ga0.96Sb and GaSb/AlSb superlattice gain layers Journal of Applied Physics. 86: 4576-4579. DOI: 10.1063/1.371405 |
0.374 |
|
1999 |
Jones JT, Bridger PM, Marsh OJ, McGill TC. Charge storage in CeO2/Si/CeO2/Si(111) structures by electrostatic force microscopy Applied Physics Letters. 75: 1326-1328. DOI: 10.1063/1.124682 |
0.309 |
|
1999 |
Bridger PM, Bandić ZZ, Piquette EC, McGill TC. Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy Applied Physics Letters. 74: 3522-3524. DOI: 10.1063/1.124148 |
0.725 |
|
1999 |
Bandić ZZ, Bridger PM, Piquette EC, McGill TC, Vaudo RP, Phanse VM, Redwing JM. High voltage (450 V) GaN Schottky rectifiers Applied Physics Letters. 74: 1266-1268. DOI: 10.1063/1.123520 |
0.724 |
|
1999 |
Walachová J, Zelinka J, Vaniš J, Karamazov S, Cukr M, Zich P, Chow DH, Mcgill TC. Testing of resonant tunneling double barrier heterostructures by BEEM/BEES Czechoslovak Journal of Physics. 49: 833-836. DOI: 10.1023/A:1021201526655 |
0.343 |
|
1999 |
Beach RA, Piquette EC, McGill TC, Watson TJ. XPS study of oxygen adsorption on (3×3) reconstructed MBE grown GaN surfaces Mrs Internet Journal of Nitride Semiconductor Research. 4. |
0.647 |
|
1998 |
Piquette EC, Bridger PM, Bandić ZZ, Mcgill TC. Growth of Iii-Nitrides by Rf-Assisted Molecular Beam Epitaxy Mrs Proceedings. 512. DOI: 10.1557/Proc-512-387 |
0.745 |
|
1998 |
Bandić ZZ, Bridger PM, Piquette EC, Beach RA, Phanse VM, Vaudo RP, Redwing J, McGill TC. Nitride Based High Power Devices: Transport Properties, Linear Defects And Goals Mrs Proceedings. 512. DOI: 10.1557/Proc-512-27 |
0.74 |
|
1998 |
Ting DZY, Daniel ES, McGill TC. Interface roughness effects in ultra-thin tunneling oxides Vlsi Design. 8: 47-51. DOI: 10.1155/1998/23567 |
0.317 |
|
1998 |
Ting DZY, McGill TC. Effects of interface roughness and conducting filaments in metal-oxide-semiconductor tunnel structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2182-2187. DOI: 10.1116/1.590297 |
0.37 |
|
1998 |
Jones JT, Croke ET, Garland CM, Marsh OJ, McGill TC. Epitaxial silicon grown on CeO 2/Si(111) structure by molecular beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2686-2689. DOI: 10.1116/1.590257 |
0.415 |
|
1998 |
Cheng XC, McGill TC. Ballistic electron emission microscopy spectroscopy study of AlSb and InAs/AlSb superlattice barriers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 2291-2295. DOI: 10.1116/1.590235 |
0.432 |
|
1998 |
Pettersson PO, Zur A, Daniel ES, Levy HJ, Marsh OJ, McGill TC. Dependence of the I-V curve of a metal insulator semiconductor switch on insulator thickness - an experimental and theoretical investigation Ieee Transactions On Electron Devices. 45: 286-292. DOI: 10.1109/16.658843 |
0.367 |
|
1998 |
Daniel ES, Ting DZY, McGill TC. Experimental and theoretical study of ultra-thin oxides Semiconductor Science and Technology. 13. DOI: 10.1088/0268-1242/13/8A/044 |
0.316 |
|
1998 |
Walachová J, Zelinka J, Vaniš J, Chow DH, Schulman JN, Karamazov S, Cukr M, Zich P, Král J, McGill TC. Erratum: “Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy” [Appl. Phys. Lett. 70, 3588 (1997)] Applied Physics Letters. 73: 3612-3612. DOI: 10.1063/1.122841 |
0.301 |
|
1998 |
Bridger PM, Bandić ZZ, Piquette EC, McGill TC. Correlation between the surface defect distribution and minority carrier transport properties in GaN Applied Physics Letters. 73: 3438-3440. DOI: 10.1063/1.122790 |
0.732 |
|
1998 |
Bandić ZZ, Bridger PM, Piquette EC, McGill TC. Electron diffusion length and lifetime in p-type GaN Applied Physics Letters. 73: 3276-3278. DOI: 10.1063/1.122743 |
0.731 |
|
1998 |
Bandić ZZ, Bridger PM, Piquette EC, McGill TC. Minority carrier diffusion length and lifetime in GaN Applied Physics Letters. 72: 3166-3168. DOI: 10.1063/1.121581 |
0.728 |
|
1998 |
Bandić ZZ, Piquette EC, McCaldin JO, McGill TC. Solid phase recrystallization of ZnS thin films on sapphire Applied Physics Letters. 72: 2862-2864. DOI: 10.1063/1.121483 |
0.712 |
|
1998 |
Bandić ZZ, Piquette EC, Bridger PM, Beach RA, Kuech TF, McGill TC. Nitride based high power devices: design and fabrication issues Solid-State Electronics. 42: 2289-2294. DOI: 10.1016/S0038-1101(98)00227-5 |
0.72 |
|
1998 |
Bandić ZZ, Piquette EC, Bridger PM, Beach RA, Kuech TF, Mcgill TC. Nitride based high power devices: Design and fabrication issues Solid-State Electronics. 42: 2289-2294. |
0.671 |
|
1997 |
Bandić ZZ, Piquette EC, Bridger PM, Kuech TF, Mcgill TC. Design And Fabrication Of Nitride Based High Power Devices Mrs Proceedings. 483: 399. DOI: 10.1557/Proc-483-399 |
0.723 |
|
1997 |
Beach RA, Piquette EC, Grant RW, McGill TC. Compositionally dependent band offsets in AlN/AlxGa1-xN heterojunctions measured by using x-ray photoelectron spectroscopy Materials Research Society Symposium - Proceedings. 482: 775-780. DOI: 10.1557/Proc-482-775 |
0.699 |
|
1997 |
Piquette EC, Bandic ZZ, McGill TC. Experimental study of sputter deposited contacts to gallium nitride Materials Research Society Symposium - Proceedings. 482: 1089-1094. DOI: 10.1557/Proc-482-1089 |
0.72 |
|
1997 |
Piquette EC, Bandic ZZ, McCaldin JO, McGill TC. MBE growth and characterization of ZnS/GaN heterostructures Materials Research Society Symposium - Proceedings. 449: 385-390. DOI: 10.1557/Proc-449-385 |
0.739 |
|
1997 |
Bandic ZZ, Hauenstein RJ, O'Steen ML, McGill TC. Kinetics of nitrogen in GaAsN layers during GaAs overgrowth Materials Research Society Symposium - Proceedings. 449: 209-214. DOI: 10.1557/Proc-449-209 |
0.736 |
|
1997 |
Piquette EC, Bandić ZZ, McCaldin JO, McGill TC. Growth and characterization of light emitting ZnS/GaN heterostructures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1148-1152. DOI: 10.1116/1.589430 |
0.76 |
|
1997 |
Daniel ES, Jones JT, Marsh OJ, McGill TC. Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1089-1096. DOI: 10.1116/1.589419 |
0.327 |
|
1997 |
Cheng X, Collins DA, McGill TC. Mapping of AlxGa1−xAs band edges by ballistic electron emission spectroscopy Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 15: 2063-2068. DOI: 10.1116/1.580609 |
0.403 |
|
1997 |
Bandić ZZ, McGill TC, Ikonić Z. Electronic structure of GaN stacking faults Physical Review B - Condensed Matter and Materials Physics. 56: 3564-3566. DOI: 10.1103/Physrevb.56.3564 |
0.698 |
|
1997 |
Walachová J, Zelinka J, Vaniš J, Chow DH, Schulman JN, Karamazov S, Cukr M, Zich P, Král J, McGill TC. Probing of InAs/AlSb double barrier heterostructures by ballistic electron emission spectroscopy Applied Physics Letters. 70: 3588-3590. DOI: 10.1063/1.119274 |
0.352 |
|
1997 |
Croke ET, Hunter AT, Pettersson PO, Ahn CC, McGill TC. Improved growth morphology of Si-Ge-C heterostructures through the use of Sb surfactant-assisted molecular beam epitaxy Thin Solid Films. 294: 105-111. DOI: 10.1016/S0040-6090(96)09256-5 |
0.398 |
|
1997 |
Alonzo AC, Collins DA, McGill TC. Tunneling spectroscopy of resonant interband tunneling structures Solid State Communications. 101: 607-610. DOI: 10.1016/S0038-1098(96)00638-2 |
0.31 |
|
1997 |
Bandic ZZ, Piquette EC, Bridger PM, Kuech TF, McGill TC. Design and fabrication of nitride based high power devices Materials Research Society Symposium - Proceedings. 483: 399-404. |
0.704 |
|
1996 |
Marquardt RR, Collins DA, Liu YX, Ting DZ, McGill TC. Resonant magnetotunneling spectroscopy of p-type-well interband tunneling diodes. Physical Review. B, Condensed Matter. 53: 13624-13630. PMID 9983108 DOI: 10.1103/Physrevb.53.13624 |
0.313 |
|
1996 |
Perkins NR, Horton MN, Zhi D, Matyi RJ, Bandic ZZ, McGill TC, Kuech TF. Nucleation and growth of gallium nitride films on Si and sapphire substrates using buffer layers Materials Research Society Symposium - Proceedings. 423: 287-292. DOI: 10.1557/Proc-423-287 |
0.739 |
|
1996 |
Bandić ZZ, Hauenstein RJ, O'Steen ML, McGill TC. Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures Applied Physics Letters. 68: 1510-1512. DOI: 10.1063/1.115682 |
0.735 |
|
1996 |
McCaldin JO, Wang MW, McGill TC. Model calculations for n-CdZnS light emitter grown on p-GaN hole injector Journal of Crystal Growth. 159: 502-505. DOI: 10.1016/0022-0248(95)00829-2 |
0.387 |
|
1996 |
Perkins NR, Horton MN, Bandic ZZ, McGill TC, Kuech TF. Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates Materials Research Society Symposium - Proceedings. 395: 243-248. |
0.715 |
|
1995 |
Perkins NR, Horton MN, Bandic ZZ, McGill TC, Kuech TF. Halide Vapor Phase Epitaxy of Gallium Nitride Films on Sapphire and Silicon Substrates Mrs Proceedings. 395: 243. DOI: 10.1557/Proc-395-243 |
0.731 |
|
1995 |
Pettersson PO, Miles RJ, McGill TC. Temperature dependence of surface morphology of silicon grown on CaF2/Si by electron beam assisted MBE Materials Research Society Symposium - Proceedings. 367: 305-310. DOI: 10.1557/Proc-367-305 |
0.398 |
|
1995 |
Collins DA, Papa GO, McGill TC. Real-time extraction of growth rates from rotating substrates during molecular-beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1953-1959. DOI: 10.1116/1.588114 |
0.353 |
|
1995 |
Wang MW, Collins DA, McGill TC, Grant RW, Feenstra RM. Study of interface asymmetry in InAs-GaSb heterojunctions Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1689-1693. DOI: 10.1116/1.587879 |
0.607 |
|
1995 |
Lin JL, Freiler MB, Levy M, Osgood RM, Collins D, McGill TC. Photon-assisted cryoetching of III-V binary compounds by Cl2 at 193 nm Applied Physics Letters. 67: 3563. DOI: 10.1063/1.114922 |
0.335 |
|
1995 |
Pettersson PO, Ahn CC, McGill TC, Croke ET, Hunter AT. Sb-surfactant-mediated growth of Si/Si1-yCy superlattices by molecular-beam epitaxy Applied Physics Letters. 67: 2530. DOI: 10.1063/1.114448 |
0.352 |
|
1995 |
Wang MW, Collins DA, McGill TC, Grant RW, Feenstra RM. Effect of interface composition and growth order on the mixed anion InAs/GaSb valence band offset Applied Physics Letters. 2981. DOI: 10.1063/1.114250 |
0.592 |
|
1995 |
Hauenstein RJ, Collins DA, Cai XP, O'Steen ML, McGill TC. Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface Applied Physics Letters. 2861. DOI: 10.1063/1.113454 |
0.413 |
|
1995 |
Wang MW, McCaldin JO, Swenberg JF, McGill TC, Hauenstein RJ. Schottky-based band lineups for refractory semiconductors Applied Physics Letters. 1974. DOI: 10.1063/1.113295 |
0.345 |
|
1995 |
Hauenstein RJ, Collins DA, O'Steen ML, Bandic ZZ, McGill TC. Anion exchange reactions and initial GaN epitaxial layer formation under nitrogen plasma exposure of a GaAs surface Materials Research Society Symposium - Proceedings. 388: 259-264. |
0.715 |
|
1994 |
Feenstra RM, Collins DA, Ting DZ, Wang MW, McGill TC. Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy. Physical Review Letters. 72: 2749-2752. PMID 10055967 DOI: 10.1103/Physrevlett.72.2749 |
0.56 |
|
1994 |
Feenstra RM, Vaterlaus A, Woodall JM, Collins DA, McGill TC. Cross-Sectional Scanning Tunneling Microscopy of III-V Semiconductor Structures Mrs Proceedings. 332. DOI: 10.1557/Proc-332-15 |
0.579 |
|
1994 |
Feenstra RM, Collins DA, Ting DZY, Wang MW, McGill TC. Interface roughness and asymmetry in InAs/GaSb superlattices studied by scanning tunneling microscopy Physical Review Letters. 72: 2749-2752. DOI: 10.1103/PhysRevLett.72.2749 |
0.538 |
|
1994 |
Pettersson PO, Miles RJ, McGill TC. Surface morphology of silicon grown on CaF2/Si by electron-beam-assisted molecular-beam epitaxy Journal of Applied Physics. 76: 7328-7331. DOI: 10.1063/1.358022 |
0.393 |
|
1994 |
Collins DA, Wang MW, Grant RW, McGill TC. Reflection high energy electron diffraction observation of anion exchange reactions on InAs surfaces Journal of Applied Physics. 75: 259-262. DOI: 10.1063/1.355893 |
0.327 |
|
1994 |
Wang MW, Swenberg JF, Phillips MC, Yu ET, McCaldin JO, Grant RW, McGill TC. X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds Applied Physics Letters. 64: 3455-3457. DOI: 10.1063/1.111239 |
0.332 |
|
1994 |
Swenberg JF, Wang MW, Miles RJ, Phillips MC, Hunter AT, McCaldin JO, McGill TC. Advances in the development of graded injector visible light emitters Journal of Crystal Growth. 138: 692-696. DOI: 10.1016/0022-0248(94)90892-3 |
0.368 |
|
1994 |
Miles RJ, Swenberg JF, Wang MW, Phillips MC, McGill TC. Investigation of crystal quality and surface morphology of ZnTe:N epilayers grown on ZnTe and GaSb substrates Journal of Crystal Growth. 138: 523-528. DOI: 10.1016/0022-0248(94)90862-1 |
0.347 |
|
1994 |
Wang MW, Swenberg JF, Miles RJ, Phillips MC, Yu ET, McCaldin JO, Grant RW, McGill TC. Measurement of the MgSe/Cd0.54Zn0.46Se valence band offset by X-ray photoelectron spectroscopy Journal of Crystal Growth. 138: 508-512. DOI: 10.1016/0022-0248(94)90859-1 |
0.363 |
|
1994 |
Feenstra RM, Collins DA, McGill TC. Scanning tunneling microscopy of InAs/GaSb superlattices with various growth conditions Superlattices and Microstructures. 15: 215. DOI: 10.1006/Spmi.1994.1043 |
0.597 |
|
1993 |
Wang MW, Collins DA, McGill TC, Grant RW. X‐ray photoelectron spectroscopy investigation of the mixed anion GaSb/InAs heterointerface Journal of Vacuum Science & Technology B. 11: 1418-1422. DOI: 10.1116/1.586952 |
0.347 |
|
1993 |
Miles RH, Schulman JN, Chow DH, McGill TC. Electronic band structure of far-infrared Ga1-xIn xSb/InAs superlattices Semiconductor Science and Technology. 8. DOI: 10.1088/0268-1242/8/1S/023 |
0.37 |
|
1993 |
Wang MW, Phillips MC, Swenberg JF, Yu ET, McCaldin JO, McGill TC. n-CdSe/p-ZnTe based wide band-gap light emitters: Numerical simulation and design Journal of Applied Physics. 73: 4660-4668. DOI: 10.1063/1.352761 |
0.332 |
|
1993 |
Phillips MC, Swenberg JF, Wang MW, McCaldin JO, McGill TC. A new approach to wide band gap visible-light emitters Physica B: Physics of Condensed Matter. 185: 485-489. DOI: 10.1016/0921-4526(93)90283-C |
0.364 |
|
1993 |
Grein CH, Young PM, Ehrenreich H, McGill TC. Auger lifetimes in ideal InGaSb/InAs superlattices Journal of Electronic Materials. 22: 1093-1096. DOI: 10.1007/Bf02817530 |
0.385 |
|
1992 |
Yu ET, Phillips MC, Chow DH, Collins DA, Wang MW, McCaldin JO, McGill TC. Interfacial reactions and band offsets in the AlSb/GaSb/ZnTe material system. Physical Review. B, Condensed Matter. 46: 13379-13388. PMID 10003385 DOI: 10.1103/Physrevb.46.13379 |
0.357 |
|
1992 |
Ting DZ, Yu ET, McGill TC. Multiband treatment of quantum transport in interband tunnel devices. Physical Review. B, Condensed Matter. 45: 3583-3592. PMID 10001938 DOI: 10.1103/Physrevb.45.3583 |
0.348 |
|
1992 |
Ting DZ, Yu ET, McGill TC. Effect of band mixing on hole-tunneling times in GaAs/AlAs double-barrier heterostructures. Physical Review. B, Condensed Matter. 45: 3576-3582. PMID 10001937 DOI: 10.1103/Physrevb.45.3576 |
0.347 |
|
1992 |
Phillips MC, Wang MW, Swenberg JF, McCaldin JO, McGill TC. Proposal and verification of a new visible light emitter based on wide band gap II-VI semiconductors Applied Physics Letters. 61: 1962-1964. DOI: 10.1063/1.108353 |
0.358 |
|
1992 |
McCaldin JO, McGill TC. Comment on "Empirical fit to band discontinuities and barrier heights in III-V alloy systems", Applied Physics Letters. 61: 2243. DOI: 10.1063/1.108255 |
0.308 |
|
1992 |
Yu ET, McCaldin JO, McGill TC. Band Offsets in Semiconductor Heterojunctions Solid State Physics - Advances in Research and Applications. 46: 1-146. DOI: 10.1016/S0081-1947(08)60397-5 |
0.345 |
|
1992 |
Phillips MC, Swenberg JF, Liu YX, Wang MW, McCaldin JO, McGill TC. Forming of Al-doped ZnTe epilayers grown by molecular beam epitaxy Journal of Crystal Growth. 117: 1050-1054. DOI: 10.1016/0022-0248(92)90911-2 |
0.402 |
|
1992 |
Liu YX, Wang MW, McCaldin JO, McGill TC. Proposal for the formation of a minority carrier injecting contact on wide bandgap semiconductors Journal of Crystal Growth. 117: 913-917. DOI: 10.1016/0022-0248(92)90883-K |
0.353 |
|
1992 |
Liu YX, Rajakarunanayake Y, McGill TC. Excitons in II-VI heterostructures Journal of Crystal Growth. 117: 742-747. DOI: 10.1016/0022-0248(92)90848-D |
0.358 |
|
1991 |
Jackson MK, Ting DZ, Chow DH, Collins DA, Söderström JR, McGill TC. Effect of the X point on the escape of electrons from the quantum well of a double-barrier heterostructure. Physical Review. B, Condensed Matter. 43: 4856-4862. PMID 9997857 DOI: 10.1103/Physrevb.43.4856 |
0.35 |
|
1991 |
Yu ET, Phillips MC, McCaldin JO, McGill TC. Measurement of the CdSe/ZnTe valence band offset by x-ray photoelectron spectroscopy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2233-2237. DOI: 10.1116/1.585726 |
0.4 |
|
1991 |
Ting DZY, Yu ET, McGill TC. Band structure effects in interband tunnel devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2405-2410. DOI: 10.1116/1.585711 |
0.359 |
|
1991 |
Chow DH, Miles RH, Schulman JN, Collins DA, McGill TC. Type II superlattices for infrared detectors and devices Semiconductor Science and Technology. 6. DOI: 10.1088/0268-1242/6/12C/010 |
0.384 |
|
1991 |
Ting DZY, Yu ET, McGill TC. Role of heavy-hole states in interband tunnel structures Applied Physics Letters. 58: 292-294. DOI: 10.1063/1.104665 |
0.353 |
|
1991 |
Phillips MC, Yu ET, Rajakarunanayake Y, McCaldin JO, Collins DA, McGill TC. Characterization of CdSe/ZnTe heterojunctions Journal of Crystal Growth. 111: 820-822. DOI: 10.1016/0022-0248(91)91089-S |
0.379 |
|
1991 |
Rajakarunanayake Y, McCaldin JO, McGill TC. Electric field assisted doping of semiconductors during epitaxial growth Journal of Crystal Growth. 111: 782-786. DOI: 10.1016/0022-0248(91)91081-K |
0.32 |
|
1991 |
Chow DH, Miles RH, Nieh CW, McGill TC. Growth of InAs/Ga1-xInxSb infrared superlattices Journal of Crystal Growth. 111: 683-687. DOI: 10.1016/0022-0248(91)91063-G |
0.419 |
|
1991 |
Collins DA, Ting DZY, Yu ET, Chow DH, Söderström JR, Rajakarunanayake Y, McGill TC. Interband tunneling in InAs/GaSb/AlSb heterostructures Journal of Crystal Growth. 111: 664-668. DOI: 10.1016/0022-0248(91)91060-N |
0.406 |
|
1990 |
Phillips MC, Rajakarunanayake Y, Mccaldin JO, Miles RH, Chow DH, Collins DA, Mcgill TC. Growth and Characterization of Znsete Epilayers and Superlattices Mrs Proceedings. 198. DOI: 10.1557/Proc-198-439 |
0.369 |
|
1990 |
Rajakarunanayake Y, Phillips MC, Mccaldin JO, Chow DH, Collins DA, Mcgill TC. Optical Investigation of the Band Offset of Cd x Zn 1−x Te /ZnTe and ZnSe x Te 1−x /ZnTe Superlattices Mrs Proceedings. 198. DOI: 10.1557/Proc-198-427 |
0.351 |
|
1990 |
Söderström JR, Chow DH, McGill TC. InAs/AlSb Double-Barrier Structure with Large Peak-to-Valley Current Ratio: A Candidate for High-Frequency Microwave Devices Ieee Electron Device Letters. 11: 27-29. DOI: 10.1109/55.46920 |
0.37 |
|
1990 |
Söderström JR, Yu ET, Jackson MK, Rajakarunanayake Y, McGill TC. Two-band modeling of narrow band gap and interband tunneling devices Journal of Applied Physics. 68: 1372-1375. DOI: 10.1063/1.346688 |
0.351 |
|
1990 |
Chow DH, Yu ET, Söderström JR, Ting DZY, McGill TC. Negative differential resistance due to resonant interband tunneling of holes Journal of Applied Physics. 68: 3744-3746. DOI: 10.1063/1.346290 |
0.381 |
|
1990 |
Yu ET, Collins DA, Ting DZY, Chow DH, McGill TC. Demonstration of resonant transmission in InAs/GaSb/InAs interband tunneling devices Applied Physics Letters. 57: 2675-2677. DOI: 10.1063/1.104109 |
0.389 |
|
1990 |
Collins DA, Yu ET, Rajakarunanayake Y, Söderström JR, Ting DZY, Chow DH, McGill TC. Experimental observation of negative differential resistance from an InAs/GaSb interface Applied Physics Letters. 57: 683-685. DOI: 10.1063/1.103591 |
0.353 |
|
1990 |
Ting DZY, Collins DA, Yu ET, Chow DH, McGill TC. Large peak current densities in novel resonant interband tunneling heterostructures Applied Physics Letters. 57: 1257-1259. DOI: 10.1063/1.103502 |
0.388 |
|
1990 |
Miles RH, Chow DH, Schulman JN, McGill TC. Infrared optical characterization of InAs/Ga1-xInxSb superlattices Applied Physics Letters. 57: 801-803. DOI: 10.1063/1.103425 |
0.335 |
|
1990 |
Croke ET, McGill TC, Hauenstein RJ, Miles RH. Evidence of segregation in (100) strained Si1-xGex alloys grown at low temperature by molecular beam epitaxy Applied Physics Letters. 56: 367-369. DOI: 10.1063/1.102787 |
0.4 |
|
1990 |
Yu ET, Croke ET, McGill TC, Miles RH. Measurement of the valence-band offset in strained Si/Ge (100) heterojunctions by x-ray photoelectron spectroscopy Applied Physics Letters. 56: 569-571. DOI: 10.1063/1.102747 |
0.38 |
|
1990 |
Chow DH, Miles RH, Söderström JR, McGill TC. Growth and characterization of InAs/Ga1-xInxSb strained-layer superlattices Applied Physics Letters. 56: 1418-1420. DOI: 10.1063/1.102486 |
0.404 |
|
1990 |
Collins DA, Chow DH, Ting DZY, Yu ET, Söderström JR, McGill TC, Watson TJ. Evidence for coherent interaction between quantum well states in AlAs GaAs triple barrier heterostructures Superlattices and Microstructures. 8: 455-458. DOI: 10.1016/0749-6036(90)90350-G |
0.337 |
|
1990 |
Miles RH, Chow DH, McGill TC. InAs/Ga1-xInxSb superlattices for infrared applications Proceedings of Spie - the International Society For Optical Engineering. 1285: 132-141. |
0.304 |
|
1989 |
Rajakarunanayake Y, McGill TC. Band structure and optical properties of Si-Si1-xGex superlattices. Physical Review. B, Condensed Matter. 40: 3051-3059. PMID 9992240 DOI: 10.1103/Physrevb.40.3051 |
0.368 |
|
1989 |
Wu GY, McGill TC. Effects of barrier phonons on the tunneling current in a double-barrier structure. Physical Review. B, Condensed Matter. 40: 9969-9972. PMID 9991528 DOI: 10.1103/Physrevb.40.9969 |
0.338 |
|
1989 |
Wu GY, McGill TC, Mailhiot C, Smith DL. k Physical Review. B, Condensed Matter. 39: 6060-6070. PMID 9949029 DOI: 10.1103/Physrevb.39.6060 |
0.317 |
|
1989 |
Söderström JR, Chow D, McGill T, Watson T. Mbe-Growth of InAs and GaSb Epitaxial Layers on GaAs Substrates Mrs Proceedings. 145. DOI: 10.1557/Proc-145-409 |
0.393 |
|
1989 |
Söderström JR, Chow DH, McGill TC. Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures Journal of Applied Physics. 66: 5106-5108. DOI: 10.1063/1.343742 |
0.332 |
|
1989 |
Johnson MB, McGill TC, Hunter AT. Space- and time-resolved photoluminescence of In-alloyed GaAs using photoluminescence excitation correlation spectroscopy Journal of Applied Physics. 66: 838-844. DOI: 10.1063/1.343506 |
0.319 |
|
1989 |
Rajakarunanayake Y, McGill TC. Si-Si1-xGex n-type resonant tunnel structures Applied Physics Letters. 55: 1537-1539. DOI: 10.1063/1.102238 |
0.39 |
|
1989 |
Yu ET, Jackson MK, McGill TC. Hole tunneling times in GaAs/AlAs double-barrier structures Applied Physics Letters. 55: 744-746. DOI: 10.1063/1.101793 |
0.355 |
|
1989 |
Söderström JR, Chow DH, McGill TC. New negative differential resistance device based on resonant interband tunneling Applied Physics Letters. 55: 1094-1096. DOI: 10.1063/1.101715 |
0.371 |
|
1989 |
Rajakarunanayake Y, Cole BH, McCaldin JO, Chow DH, Söderström JR, McGill TC, Jones CM. Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe Applied Physics Letters. 55: 1217-1219. DOI: 10.1063/1.101659 |
0.426 |
|
1989 |
Söderström JR, Chow DH, McGill TC. Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures Applied Physics Letters. 55: 1348-1350. DOI: 10.1063/1.101595 |
0.334 |
|
1989 |
Jackson MK, Johnson MB, Chow DH, McGill TC, Nieh CW. Electron tunneling time measured by photoluminescence excitation correlation spectroscopy Applied Physics Letters. 54: 552-554. DOI: 10.1063/1.100928 |
0.376 |
|
1989 |
Hauenstein RJ, Miles RH, Croke ET, McGill TC. Relaxation of coherent strain in Si1-xGex/Si superlattices and alloys Thin Solid Films. 183: 79-86. DOI: 10.1016/0040-6090(89)90432-X |
0.37 |
|
1989 |
Ting DZY, Jackson MK, Chow DH, Söderström JR, Collins DA, McGill TC. X-point tunneling in AlAs/GaAs double barrier heterostructures Solid State Electronics. 32: 1513-1517. DOI: 10.1016/0038-1101(89)90266-9 |
0.33 |
|
1989 |
Collins DA, Chow DH, Ting DZY, Yu ET, Söderström JR, McGill TC. Large peak-to-valley current ratios in triple barrier heterostructures Solid State Electronics. 32: 1095-1099. DOI: 10.1016/0038-1101(89)90196-2 |
0.308 |
|
1989 |
Croke ET, Hauenstein RJ, Nieh CW, McGill TC. Growth and characterization of superconducting V3Si on Si and Al2O3 by molecular beam epitaxial techniques Journal of Electronic Materials. 18: 757-761. DOI: 10.1007/Bf02657529 |
0.385 |
|
1988 |
Johnson NF, Ehrenreich H, Wu GY, McGill TC. Superlattice k Physical Review. B, Condensed Matter. 38: 13095-13098. PMID 9946283 DOI: 10.1103/Physrevb.38.13095 |
0.317 |
|
1988 |
Yu ET, Chow DH, McGill TC. Commutativity of the GaAs/AlAs(100) band offset. Physical Review. B, Condensed Matter. 38: 12764-12767. PMID 9946243 DOI: 10.1116/1.584758 |
0.358 |
|
1988 |
Rajakarunanayake Y, Miles RH, Wu GY, McGill TC. Band structure of ZnSe-ZnTe superlattices. Physical Review. B, Condensed Matter. 37: 10212-10215. PMID 9944452 DOI: 10.1103/Physrevb.37.10212 |
0.32 |
|
1988 |
Chow DH, McCaldin JO, Bonnefoi AR, McGill TC, Watson TJ, Sou LK, Faurie JP, Shirland FA, Wu OK. Electrical studies of single-barrier Hg1_xCdx Te heterostructures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 2614-2618. DOI: 10.1116/1.575517 |
0.356 |
|
1988 |
Woodward TK, Mcgill TC, Chung HF, Burnham RD. Applications of Resonant-Tunneling Field-Effect Transistors Ieee Electron Device Letters. 9: 122-124. DOI: 10.1109/55.2062 |
0.313 |
|
1988 |
Miles RH, McGill TC, Chow PP, Johnson DC, Hauenstein RJ, Nieh CW, Strathman MD. Dependence of critical thickness on growth temperature in Ge xSi1-x/Si superlattices Applied Physics Letters. 52: 916-918. DOI: 10.1063/1.99272 |
0.403 |
|
1988 |
Croke ET, Hauenstein RJ, McGill TC. Growth of superconducting V3Si on Si by molecular beam epitaxial techniques Applied Physics Letters. 53: 514-516. DOI: 10.1063/1.100621 |
0.401 |
|
1988 |
Yu ET, McGill TC. III-V/II-VI double-barrier resonant tunneling structures Applied Physics Letters. 53: 60-62. DOI: 10.1063/1.100125 |
0.377 |
|
1988 |
Woodward TK, McGill TC, Burnham RD, Chung HF. Resonant tunneling field-effect transistors Superlattices and Microstructures. 4: 1-9. DOI: 10.1016/0749-6036(88)90257-1 |
0.344 |
|
1987 |
McGill TC, Miles RH, Wu GY, Watson TJ. VARIATION IN THE PROPERTIES OF SUPERLATTICES WITH BAND OFFSETS Materials Research Society Symposia Proceedings. 90: 143-151. DOI: 10.1557/Proc-90-143 |
0.319 |
|
1987 |
Johnson MB, Hunter AT, McGill TC. Space and Time Resolved Photoluminescence of Defects at Dislocations in In-Alloyed GaAs Substrate Material Mrs Proceedings. 104. DOI: 10.1557/Proc-104-415 |
0.327 |
|
1987 |
Chow DH, McCaldin JO, Bonnefoi AR, McGill TC, Sou IK, Faurie JP. Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions Applied Physics Letters. 51: 2230-2232. DOI: 10.1063/1.98949 |
0.355 |
|
1987 |
Woodward TK, McGill TC, Chung HF, Burnham RD. Integration of a resonant-tunneling structure with a metal-semiconductor field-effect transistor Applied Physics Letters. 51: 1542-1544. DOI: 10.1063/1.98629 |
0.38 |
|
1987 |
Bonnefoi AR, McGill TC, Burnham RD, Anderson GB. Observation of resonant tunneling through GaAs quantum well states confined by AlAs X-point barriers Applied Physics Letters. 50: 344-346. DOI: 10.1063/1.98195 |
0.351 |
|
1987 |
Woodward TK, McGill TC, Burnham RD. Experimental realization of a resonant tunneling transistor Applied Physics Letters. 50: 451-453. DOI: 10.1063/1.98171 |
0.375 |
|
1987 |
Miles RH, McCaldin JO, McGill TC. Superlattices of II-VI semiconductors Journal of Crystal Growth. 85: 188-193. DOI: 10.1016/0022-0248(87)90221-1 |
0.34 |
|
1986 |
Hauenstein RJ, Schowalter LJ, Hunt BD, Marsh OJ, McGill TC. Tunneling Spectroscopy of Single-Crystal CoSi 2 and NiSi 2 Epilayers on n-type Si Mrs Proceedings. 67: 227. DOI: 10.1557/Proc-67-227 |
0.382 |
|
1986 |
Baukus JP, Hunter AT, Marsh OJ, Jones CE, Wu GY, Hetzler SR, McGill TC, Faurie JP. Infrared absorption measurement and analysis of hgte-cdte superlattices Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 2110-2113. DOI: 10.1116/1.574037 |
0.311 |
|
1986 |
McGill TC, Wu GY, Hetzler SR, Watson TJ. Superlattices: Progress and prospects Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 2091-2095. DOI: 10.1116/1.574033 |
0.302 |
|
1986 |
Hauenstein RJ, Schlesinger TE, McGill TC, Hunt BD, Schowalter LJ. Schottky barrier height measurements of type‐A and type‐B NiSi2 epilayers on Si Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 4: 860-864. DOI: 10.1116/1.573796 |
0.565 |
|
1986 |
Wu GY, Smith DL, Mailhiot C, McGill TC. Theoretical study of the electronic properties of semimagnetic superlattices Applied Physics Letters. 49: 1551-1553. DOI: 10.1063/1.97279 |
0.3 |
|
1986 |
Miles RH, Wu GY, Johnson MB, McGill TC, Faurie JP, Sivananthan S. Photoluminescence studies of ZnTe-CdTe strained-layer superlattices Applied Physics Letters. 48: 1383-1385. DOI: 10.1063/1.96916 |
0.357 |
|
1986 |
Woodward TK, McGill TC, Burnham RD. Photoresponse of asymmetrically doped GaAs-AlAs heterostructures under external bias Journal of Applied Physics. 60: 3755-3758. DOI: 10.1063/1.337587 |
0.387 |
|
1985 |
Hunt BD, Schowalter LJ, Lewis N, Hall EL, Hauenstein RJ, Schlesrnger TE, McGill TC, Okamoto M, Hashimoto S. Structural Characterization and Schottky Barrier Height Measurements of Epitaxial NiSi2 on Si Mrs Proceedings. 54. DOI: 10.1557/Proc-54-479 |
0.363 |
|
1985 |
Bonnefoi AR, McGill TC, Burnham RD. Resonant tunneling transistors with controllable negative differential resistances Ieee Electron Device Letters. 6: 636-638. DOI: 10.1109/Edl.1985.26258 |
0.315 |
|
1985 |
Bonnefoi AR, McGill TC, Burnham RD. Uniformity in the electrical characteristics of GaAs/AlAs tunnel structures grown by metalorganic chemical vapor deposition Applied Physics Letters. 47: 307-309. DOI: 10.1063/1.96201 |
0.401 |
|
1985 |
Wu GY, McGill TC. Strain effects in HgTe-CdTe superlattices grown on CdTe substrates Applied Physics Letters. 47: 634-636. DOI: 10.1063/1.96041 |
0.33 |
|
1985 |
Woodward TK, Schlesinger TE, McGill TC, Burnham RD. Capacitance-voltage characteristics of GaAs-AlAs heterostructures Applied Physics Letters. 47: 631-633. DOI: 10.1063/1.96040 |
0.575 |
|
1985 |
Hauenstein RJ, Schlesinger TE, McGill TC, Hunt BD, Schowalter LJ. Schottky barrier height measurements of epitaxial NiSi2 on Si Applied Physics Letters. 47: 853-855. DOI: 10.1063/1.96007 |
0.566 |
|
1985 |
Wu GY, Mailhiot C, McGill TC. Optical properties of HgTe‐CdTe superlattices Applied Physics Letters. 46: 72-74. DOI: 10.1063/1.95858 |
0.33 |
|
1985 |
Bonnefoi AR, Collins RT, McGill TC, Burnham RD, Ponce FA. RESONANT TUNNELING IN GaAs/AlAs HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION Applied Physics Letters. 46: 285-287. DOI: 10.1063/1.95660 |
0.572 |
|
1985 |
Schlesinger TE, Collins RT, McGill TC, Burnham RD. Optical investigations of electron transport through GaAs/AlAs heterostructures Journal of Applied Physics. 58: 852-856. DOI: 10.1063/1.336154 |
0.695 |
|
1985 |
Schlesinger TE, Collins RT, McGill TC, Burnham RD. PHOTOVOLTAIC INVESTIGATIONS OF GaAs/AlAs HETEROSTRUCTURES Superlattices and Microstructures. 1: 417-421. DOI: 10.1016/S0749-6036(85)80008-2 |
0.692 |
|
1985 |
Bauer RS, McGILL TC. Interfaces and Devices Vlsi Electronics Microstructure Science. 10: 3-26. DOI: 10.1016/B978-0-12-234110-6.50006-5 |
0.325 |
|
1985 |
Schlesinger TE, Collins RT, McGill TC, Burnham RD. PHOTOVOLTAIC INVESTIGATIONS OF GaAs/AlAs HETEROSTRUCTURES Superlattices and Microstructures. 1: 417-421. |
0.551 |
|
1984 |
Collins RT, Lambe J, McGill TC, Burnham RD. Inelastic tunneling characteristics of AlAs/GaAs heterojunctions Applied Physics Letters. 44: 532-534. DOI: 10.1063/1.94828 |
0.597 |
|
1984 |
Zur A, McGill TC. Lattice match: An application to heteroepitaxy Journal of Applied Physics. 55: 378-386. DOI: 10.1063/1.333084 |
0.304 |
|
1984 |
Smith DL, McGill TC. HgTe-CdTe SUPERLATTICES Le Journal De Physique Colloques. 45: C5-509-C5-513. DOI: 10.1051/Jphyscol:1984575 |
0.338 |
|
1983 |
McGill TC. Summary Abstract: HgTe–CdTe superlattices Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 1: 260. DOI: 10.1116/1.582498 |
0.34 |
|
1983 |
Collins RT, McGill TC. Electronic properties of deep levels in p-type CdTe Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 1: 1633-1636. DOI: 10.1116/1.572245 |
0.549 |
|
1983 |
Feenstra RM, Hauenstein RJ, McGill TC. Vibrational modes of oxygen in GaP including second-nearest-neighbor interactions Physical Review B. 28: 1858-1869. DOI: 10.1103/Physrevb.28.5793 |
0.473 |
|
1983 |
Schlesinger TE, McGill TC. Isotope-shift experiments on luminescence attributed to (Fe,B) pairs in silicon Physical Review B. 28: 3643-3644. DOI: 10.1103/PhysRevB.28.3643 |
0.452 |
|
1983 |
Zur A, McGill TC, Smith DL. Fermi-level position at a semiconductor-metal interface Physical Review B. 28: 2060-2067. DOI: 10.1103/Physrevb.28.2060 |
0.312 |
|
1983 |
Smith DL, McGill TC, Schulman JN. Advantages of the HgTe‐CdTe superlattice as an infrared detector material Applied Physics Letters. 43: 180-182. DOI: 10.1063/1.94272 |
0.314 |
|
1983 |
Prabhakar A, McGill TC, Nicolet MA. Platinum diffusion into silicon from PtSi Applied Physics Letters. 43: 1118-1120. DOI: 10.1063/1.94247 |
0.351 |
|
1983 |
Feenstra RM, McGill TC. Dissociation of (Zn,O) pairs in GaP Physica B-Condensed Matter. 149-151. DOI: 10.1016/0378-4363(83)90466-7 |
0.516 |
|
1983 |
Redondo A, Goddard W, McGill T. The mott insulator model of the Si(111)-(2×1) surface Surface Science Letters. 132: A338. DOI: 10.1016/0167-2584(83)90149-4 |
0.347 |
|
1983 |
Zur A, McGill T, Smith D. Dipoles, defects and interfaces Surface Science. 132: 456-464. DOI: 10.1016/0039-6028(83)90552-6 |
0.334 |
|
1983 |
Daw MS, Smith D, McGill T. Core excitons for the (110) surface of zinc blende III–V semiconductors Solid State Communications. 47: 449-453. DOI: 10.1016/0038-1098(83)91066-9 |
0.301 |
|
1983 |
Chang Y, McGill T. Breit-Wigner-Fano resonances in the photoconductivity of semiconductors: theory Solid State Communications. 47: 171-175. DOI: 10.1016/0038-1098(83)90702-0 |
0.455 |
|
1983 |
Baron R, Young M, McGill T. Breit-Wigner-Fano resonances in the photoconductivity of semiconductors: Experiment Solid State Communications. 47: 167-169. DOI: 10.1016/0038-1098(83)90701-9 |
0.306 |
|
1983 |
Schlesinger TE, Hauenstein RJ, Feenstra RM, McGill TC. Isotope shifts for the P, Q, R lines in indium-doped silicon Solid State Communications. 46: 321-324. DOI: 10.1016/0038-1098(83)90661-0 |
0.632 |
|
1982 |
Redondo A, Goddard WA, McGill TC. Mott insulator model of the Si(111)–(2×1) surface Journal of Vacuum Science and Technology. 21: 649-654. DOI: 10.1116/1.571806 |
0.346 |
|
1982 |
Redondo A, Goddard WA, McGill TC. Summary Abstract: Mott insulator model of the Si(111)‐(2×1) surface Journal of Vacuum Science and Technology. 21: 328-329. DOI: 10.1116/1.571772 |
0.314 |
|
1982 |
Mailhiot C, Chang Y, McGill TC. Energy spectra of donors in GaAs–Ga1−xAlxAs quantum well structures in the effective mass approximation Journal of Vacuum Science and Technology. 21: 519-523. DOI: 10.1116/1.571751 |
0.526 |
|
1982 |
Hunter AT, McGill TC. Luminescence studies of HgCdTe alloys Journal of Vacuum Science and Technology. 21: 205-207. DOI: 10.1116/1.571716 |
0.332 |
|
1982 |
Swarts CA, Daw MS, McGill TC. Bulk vacancies in CdxHg1−xTe Journal of Vacuum Science and Technology. 21: 198-200. DOI: 10.1116/1.571712 |
0.318 |
|
1982 |
Collins RT, Kuech TF, McGill TC. A DLTS study of deep levels in n‐type CdTe Journal of Vacuum Science and Technology. 21: 191-194. DOI: 10.1116/1.571710 |
0.544 |
|
1982 |
Mailhiot C, Chang Y, McGill TC. Energy spectra of donors inGaAs−Ga1−xAlxAsquantum well structures in the effective-mass approximation Physical Review B. 26: 4449-4457. DOI: 10.1103/Physrevb.26.4449 |
0.527 |
|
1982 |
Feenstra RM, McGill TC. Periodicity in the undulation spectra of GaP: N Physical Review B. 26: 430-431. DOI: 10.1103/Physrevb.26.430 |
0.503 |
|
1982 |
Schlesinger TE, McGill TC. Role of Fe in new luminescence lines in Si:T1 and Si:In Physical Review B. 25: 7850-7851. DOI: 10.1103/PhysRevB.25.7850 |
0.448 |
|
1982 |
Feenstra RM, McGill TC. Reaction kinetics in GaP:(Zn,O) Physical Review B. 25: 6329-6337. DOI: 10.1103/Physrevb.25.6329 |
0.483 |
|
1982 |
Chang Y, McGill TC. Theory of multiexciton complexes bound to donors in multivalley semiconductors Physical Review B. 25: 3963-3974. DOI: 10.1103/Physrevb.25.3963 |
0.431 |
|
1982 |
Chang Y, McGill TC. Theory of fine-structure splittings for donor-bound excitons in indirect materials Physical Review B. 25: 3945-3962. DOI: 10.1103/Physrevb.25.3945 |
0.506 |
|
1982 |
Hunter AT, McGill TC. Selective excitation luminescence in bulk‐grown GaAs Applied Physics Letters. 40: 169-171. DOI: 10.1063/1.93031 |
0.312 |
|
1982 |
Mailhiot C, Chang Y, McGill TC. Energy spectra of donors in GaAs-Ga1−xAlxAs quantum well structures Surface Science. 113: 161-164. DOI: 10.1016/0167-2584(82)90456-X |
0.513 |
|
1981 |
Swarts CA, Goddard WA, McGill TC. Geometry of the abrupt (110) Ge/GaAs interface Journal of Vacuum Science and Technology. 19: 551-555. DOI: 10.1116/1.571124 |
0.362 |
|
1981 |
Swarts CA, Goddard WA, McGill TC. Core to surface excitations on GaAs(110) Journal of Vacuum Science and Technology. 19: 360-366. DOI: 10.1116/1.571064 |
0.309 |
|
1981 |
Daw MS, Smith D, Swarts C, McGill T. Surface vacancies in II–VI and III–V zinc blende semiconductors Journal of Vacuum Science and Technology. 19: 508-512. DOI: 10.1116/1.571048 |
0.31 |
|
1981 |
Feenstra RM, McGill TC. Defect Reactions in GaP: (Zn,O) Physical Review Letters. 47: 925-927. DOI: 10.1103/Physrevlett.47.925 |
0.493 |
|
1981 |
Redondo A, Goddard WA, McGill TC. Electronic structure of steps on silicon (111) surfaces from theoretical studies of finite clusters Physical Review B. 24: 6135-6138. DOI: 10.1103/Physrevb.24.6135 |
0.337 |
|
1981 |
Chang YC, McGill TC. Valley-orbit splittings for the donor states in GaP Physical Review B. 24: 5779-5787. DOI: 10.1103/Physrevb.24.5779 |
0.479 |
|
1981 |
Schulman JN, McGill TC. Complex band structure and superlattice electronic states Physical Review B. 23: 4149-4155. DOI: 10.1103/Physrevb.23.4149 |
0.363 |
|
1981 |
Swarts C, McGill T, Goddard W. Reconstruction of the (110) surface of III–V semiconductor compounds Surface Science. 110: 400-414. DOI: 10.1016/0039-6028(81)90647-6 |
0.308 |
|
1980 |
McCaldin JO, McGill TC. The Metal-Semiconductor Interface Annual Review of Materials Science. 10: 65-83. DOI: 10.1146/Annurev.Ms.10.080180.000433 |
0.315 |
|
1980 |
Swarts CA, Goddard III WA, McGill TC. Theoretical studies of the reconstruction of the (110) surface of III–V and II–VI semiconductor compounds Journal of Vacuum Science and Technology. 17: 982-986. DOI: 10.1116/1.570652 |
0.316 |
|
1980 |
Barton JJ, Swarts CA, Goddard WA, McGill TC. Chemisorption of oxygen and aluminum on the GaAs (110) surface from ab initio theory Journal of Vacuum Science and Technology. 17: 164-168. DOI: 10.1116/1.570462 |
0.301 |
|
1980 |
Chang YC, McGill TC. Excitation Spectra of Bound Excitons and Bound Multiexciton Complexes inn-Type Si Physical Review Letters. 45: 471-474. DOI: 10.1103/Physrevlett.45.471 |
0.317 |
|
1980 |
Schulman J, McGill T. Evanescent states and the CdTe/HgTe superlattice Solid State Communications. 34: 29-31. DOI: 10.1016/0038-1098(80)90622-5 |
0.328 |
|
1980 |
Feenstra R, McGill T. Exciton capture cross sections of indium and boron impurities in silicon Solid State Communications. 36: 1039-1045. DOI: 10.1016/0038-1098(80)90033-2 |
0.522 |
|
1979 |
Schulman JN, McGill TC. Ideal CdTe/HgTe superlattices Journal of Vacuum Science and Technology. 16: 1513-1516. DOI: 10.1116/1.570237 |
0.363 |
|
1979 |
Goddard III WA, McGill TC. Study of surfaces and interfaces using quantum chemistry techniques Journal of Vacuum Science and Technology. 16: 1308-1317. DOI: 10.1116/1.570148 |
0.325 |
|
1979 |
Hunter AT, Lyon SA, Smith DL, McGill TC. Transient decay of satellite lines of bound excitons in Si: P Physical Review B. 20: 2431-2437. DOI: 10.1103/Physrevb.20.2431 |
0.495 |
|
1979 |
Baron R, Baukus JP, Allen SD, McGill TC, Young MH, Kimura H, Winston HV, Marsh OJ. Nature of the 0.111‐eV acceptor level in indium‐doped silicon Applied Physics Letters. 34: 257-259. DOI: 10.1063/1.90772 |
0.322 |
|
1979 |
Elliott KR, Lyon SA, Smith DL, McGill TC. Evidence for an excited level of the neutral indium acceptor in silicon Physics Letters A. 70: 52-54. DOI: 10.1016/0375-9601(79)90325-6 |
0.541 |
|
1979 |
Mitchard GS, Lyon SA, Elliott KR, McGill TC. Observation of long lifetime lines in photoluminescence from Si: In Solid State Communications. 29: 425-429. DOI: 10.1016/0038-1098(79)91209-2 |
0.553 |
|
1978 |
Schulman JN, McGill TC. Tight‐binding calculation for the AlAs–GaAs (100) interface Journal of Vacuum Science and Technology. 15: 1456-1458. DOI: 10.1116/1.569807 |
0.346 |
|
1978 |
Goddard III WA, Barton JJ, Redondo A, McGill TC. Theoretical studies of Si and GaAs surfaces and initial steps in the oxidation Journal of Vacuum Science and Technology. 15: 1274-1286. DOI: 10.1116/1.569753 |
0.346 |
|
1978 |
Lyon SA, Smith DL, McGill TC. Thermodynamic determination of work functions of bound multiexciton complexes Physical Review Letters. 41: 56-60. DOI: 10.1103/Physrevlett.41.56 |
0.544 |
|
1978 |
Chen M, Lyon SA, Smith DL, McGill TC. Transients of the photoluminescence intensities of the electron-hole droplets in pure and doped Ge Physical Review B. 17: 4744-4756. DOI: 10.1103/Physrevb.17.4744 |
0.572 |
|
1978 |
Lyon SA, Smith DL, McGill TC. Edge luminescence spectra of acceptors in Si: Implications for multiexciton complexes Physical Review B. 17: 2620-2624. DOI: 10.1103/Physrevb.17.2620 |
0.569 |
|
1978 |
Elliott KR, Osbourn GC, Smith DL, McGill TC. Bound-exciton absorption in Si:Al, Si:Ga, and Si:In Physical Review B. 17: 1808-1815. DOI: 10.1103/Physrevb.17.1808 |
0.305 |
|
1978 |
Osbourn GC, Lyon SA, Elliott KR, Smith DL, McGill TC. Auger and radiative recombination of acceptor bound excitons in semiconductors Solid State Electronics. 21: 1339-1342. DOI: 10.1016/0038-1101(78)90203-4 |
0.58 |
|
1978 |
Elliott K, McGill T. Systematics of bound excitons and bound multiexciton complexes for shallow donors in silicon Solid State Communications. 28: 491-496. DOI: 10.1016/0038-1098(78)90473-8 |
0.311 |
|
1978 |
Lyon SA, Smith DL, McGill TC. Luminescence of bound exciton and bound multiexciton complexes in Si:Li Solid State Communications. 28: 317-320. DOI: 10.1016/0038-1098(78)90432-5 |
0.535 |
|
1978 |
Elliott K, Smith D, McGill T. Absorption and luminescence of the bound exciton in thallium doped silicon Solid State Communications. 27: 317-320. DOI: 10.1016/0038-1098(78)90044-3 |
0.349 |
|
1978 |
Lyon SA, Osbourn GC, Smith DL, McGill TC. BOUND EXCITON LIFETIMES FOR ACCEPTORS IN Si Solid State Communications. 425-428. DOI: 10.1016/0038-1098(77)91000-6 |
0.566 |
|
1977 |
Elliot K, Smith D, McGill T. Capture cross section of excitons on neutral indium impurities in silicon Solid State Communications. 24: 461-463. DOI: 10.1016/0038-1098(77)90287-3 |
0.31 |
|
1977 |
Redondo A, Goddard W, McGill T, Surratt G. Relaxation of (111) silicon surface atoms from studies of Si4H9 clusters Solid State Communications. 21: 991-994. DOI: 10.1016/0038-1098(77)90002-3 |
0.321 |
|
1977 |
Chen M, Lyon SA, Elliott KR, Smith DL, McGill TC. Transients of the photoluminescence from EHD in doped and undoped Ge Il Nuovo Cimento B Series 11. 39: 622-627. DOI: 10.1007/Bf02725801 |
0.557 |
|
1976 |
McCaldin JO, McGill TC, Mead CA. Schottky barriers on compound semiconductors: The role of the anion Journal of Vacuum Science and Technology. 13: 802-806. DOI: 10.1116/1.568993 |
0.542 |
|
1976 |
McCaldin JO, McGill TC, Mead CA. Correlation for III-V and II-VI Semiconductors of the Au Schottky Barrier Energy with Anion Electronegativity Physical Review Letters. 36: 56-58. DOI: 10.1103/Physrevlett.36.56 |
0.517 |
|
1976 |
Smith DL, McGill TC. Temperature dependence of the relative integrated intensities of symmetry-allowed phonon-assisted exciton emission in Si and Ge Physical Review B. 14: 2448-2455. DOI: 10.1103/Physrevb.14.2448 |
0.341 |
|
1976 |
Hammond RB, McGill TC, Mayer JW. Temperature dependence of the electron-hole-liquid luminescence in Si Physical Review B. 13: 3566-3575. DOI: 10.1103/Physrevb.13.3566 |
0.335 |
|
1976 |
Marrello V, McGill TC, Mayer JW. Properties of the electron-hole condensate in Ge double-injection diodes. I Physical Review B. 13: 1607-1616. DOI: 10.1103/Physrevb.13.1607 |
0.321 |
|
1976 |
Best JS, McCaldin JO, McGill TC, Mead CA, Mooney JB. HgSe, a highly electronegative stable metallic contact for semiconductor devices Applied Physics Letters. 29: 433-434. DOI: 10.1063/1.89109 |
0.542 |
|
1976 |
Scranton RA, Mooney JB, McCaldin JO, McGill TC, Mead CA. Highly electronegative metallic contacts to semiconductors using polymeric sulfur nitride Applied Physics Letters. 29: 47-48. DOI: 10.1063/1.88868 |
0.533 |
|
1976 |
Mead C, McGill T. Schottky barrier heights on p-type diamond and silicon carbide (6h) Physics Letters A. 58: 249-251. DOI: 10.1016/0375-9601(76)90088-8 |
0.528 |
|
1976 |
Goddard W, Redondo A, McGill T. The peroxy radical model for the chemisorption of O2 onto silicon surfaces Solid State Communications. 18: 981-984. DOI: 10.1016/0038-1098(76)91221-7 |
0.315 |
|
1976 |
Pan D, Smith D, McGill T. Binding of an exciton to a neutral acceptor Solid State Communications. 18: 1557-1560. DOI: 10.1016/0038-1098(76)90392-6 |
0.333 |
|
1976 |
Smith D, Chen M, McGill T. Ratio of TO- to LA-phonon assisted luminescence intensities from the exciton and electron-hole condensate in Ge Solid State Communications. 18: 1485-1487. DOI: 10.1016/0038-1098(76)90375-6 |
0.334 |
|
1976 |
Hammond RB, McGill TC, Mayer JW. Properties of the electron–hole liquid luminescence in si double injection diodes Physica Status Solidi (a). 33: 59-66. DOI: 10.1002/Pssa.2210330104 |
0.334 |
|
1975 |
Hammond RB, Smith DL, McGill TC. Temperature Dependence of Silicon Luminescence Due to Splitting of the Indirect Ground State Physical Review Letters. 35: 1535-1538. DOI: 10.1103/Physrevlett.35.1535 |
0.356 |
|
1975 |
Smith DL, Pan DS, McGill TC. Impact ionization of excitons in Ge and Si Physical Review B. 12: 4360-4366. DOI: 10.1103/Physrevb.12.4360 |
0.331 |
|
1975 |
Lee TF, Pashley RD, McGill TC, Mayer JW. Investigation of tellurium-implanted silicon Journal of Applied Physics. 46: 381-388. DOI: 10.1063/1.321347 |
0.316 |
|
1975 |
Lee TF, McGill TC. Variation of impurity−to−band activation energies with impurity density Journal of Applied Physics. 46: 373-380. DOI: 10.1063/1.321346 |
0.363 |
|
1974 |
McGill TC. Phenomenology of metal-semiconductor electrical barriers Journal of Vacuum Science and Technology. 11: 935-942. DOI: 10.1116/1.1318709 |
0.313 |
|
1974 |
McGill TC, Mead CA. Electrical interface barriers Journal of Vacuum Science and Technology. 11: 122-127. DOI: 10.1116/1.1318540 |
0.535 |
|
1974 |
Marrello V, Hammond R, Silver R, McGill T, Mayer J. Electron hole condensate radiation from Ge double injection devices between 1.5° and 4.2° Physics Letters A. 47: 237-238. DOI: 10.1016/0375-9601(74)90024-3 |
0.309 |
|
1974 |
Hammond R, Marrello V, Silver R, McGill T, Mayer J. Condensation of injected electrons and holes in silicon Solid State Communications. 15: 251-253. DOI: 10.1016/0038-1098(74)90751-0 |
0.31 |
|
1973 |
Mohsen A, McGill T, Mead C. Charge transfer in overlapping gate charge-coupled devices Ieee Journal of Solid-State Circuits. 8: 191-207. DOI: 10.1109/Jssc.1973.1050376 |
0.493 |
|
1973 |
Mohsen A, McGill T, Daimon Y, Mead C. The influence of interface states on incomplete charge transfer in overlapping gate charge-coupled devices Ieee Journal of Solid-State Circuits. 8: 125-138. DOI: 10.1109/Jssc.1973.1050361 |
0.516 |
|
1973 |
Marrello V, Lee TF, Silver RN, McGill TC, Mayer JW. Condensation of Injected Electrons and Holes in Germanium Physical Review Letters. 31: 593-594. DOI: 10.1103/Physrevlett.31.593 |
0.309 |
|
1973 |
Lee TF, McGill TC. Semiempirical calculation of deep levels: divacancy in Si Journal of Physics C: Solid State Physics. 6: 3438-3450. DOI: 10.1088/0022-3719/6/23/017 |
0.325 |
|
1973 |
Mohsen A, McGill T, Anthony M, Mead C. Push clocks: a new approach to charge‐coupled devices clocking Applied Physics Letters. 22: 172-175. DOI: 10.1063/1.1654600 |
0.474 |
|
1973 |
McGill T, Winston H. Temperature dependence of multiphonon absorption in ionic insulators Solid State Communications. 13: 1459-1463. DOI: 10.1016/0038-1098(73)90189-0 |
0.302 |
|
1971 |
Kurtin SL, McGill TC, Mead CA. Direct Interelectrode Tunneling in GaSe Physical Review B. 3: 3368-3379. DOI: 10.1103/Physrevb.3.3368 |
0.552 |
|
1970 |
Kurtin S, McGill TC, Mead CA. Tunneling Currents and theE−kRelation Physical Review Letters. 25: 756-759. DOI: 10.1103/Physrevlett.25.756 |
0.536 |
|
1970 |
McGill TC, Kurtin S, Fishbone L, Mead CA. Contact‐Limited Currents in Metal‐Insulator‐Metal Structures Journal of Applied Physics. 41: 3831-3839. DOI: 10.1063/1.1659514 |
0.53 |
|
1970 |
McGill TC, Kurtin SL, Shifrin GA. Optical Reflection Studies of Damage in Ion Implanted Silicon Journal of Applied Physics. 41: 246-251. DOI: 10.1063/1.1658329 |
0.316 |
|
1969 |
Kurtin S, McGill TC, Mead CA. Fundamental Transition in the Electronic Nature of Solids Physical Review Letters. 22: 91-94. DOI: 10.1007/978-94-009-0657-0_10 |
0.307 |
|
1968 |
Parker G, McGill T, Mead C, Hoffman D. Electric field dependence of GaAs Schottky barriers Solid-State Electronics. 11: 201-204. DOI: 10.1016/0038-1101(68)90079-8 |
0.547 |
|
1967 |
Thornber KK, McGill TC, Mead CA. The tunneling time of an electron Journal of Applied Physics. 38: 2384-2385. DOI: 10.1063/1.1709888 |
0.525 |
|
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