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Bahram Nabet - Publications

Affiliations: 
Drexel University, Philadelphia, PA, United States 
Area:
Electronics and Electrical Engineering, Electricity and Magnetism Physics
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76 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Montazeri K, Currie M, Verger L, Dianat P, Barsoum MW, Nabet B. Beyond Gold: Spin-Coated Ti C -Based MXene Photodetectors. Advanced Materials (Deerfield Beach, Fla.). e1903271. PMID 31523860 DOI: 10.1002/Adma.201903271  0.42
2019 Chen G, Gallo EM, Burger J, Nabet B, Cola A, Prete P, Lovergine N, Spanier JE. Publisher's Note: “On direct-writing methods for electrically contacting GaAs and Ge nanowire devices” [Appl. Phys. Lett. 96, 223107 (2010)] Applied Physics Letters. 115: 219901. DOI: 10.1063/1.5138640  0.32
2018 Wang Z, Currie M, Dianat P, Montazeri K, Nabet B. Enhancement of Optoelectronic Properties of Core–Shell Nanowires Ieee Transactions On Nanotechnology. 17: 1058-1062. DOI: 10.1109/Tnano.2018.2858548  0.383
2017 Wang Z, Dianat P, Montazeri K, Taskin B, Currie M, Prete P, Lovergine N, Nabet B. A Core-Shell Nanowire Platform for Silicon Photonics Frontiers in Optics. DOI: 10.1364/Fio.2017.Jw4A.45  0.377
2017 Montazeri K, Wang Z, Nabet B. Confining Low Energy Light with Tapered Conical Plasmonic Nanowires Frontiers in Optics. DOI: 10.1364/Fio.2017.Jw3A.97  0.306
2017 Dianat P, Nabet B. A Quantum Opto-plasmonic Capacitor for Low-power High-speed Information Processing Frontiers in Optics. DOI: 10.1364/Fio.2017.Jw3A.18  0.307
2017 Currie M, Persano A, Taurino A, Quaranta F, Cola A, Prete P, Lovergine N, Dianat P, Wang Z, Nabet B. Electro-Optically Sampled Time Response of Core-Shell Nanowires Frontiers in Optics. DOI: 10.1364/Fio.2017.Fth2D.2  0.388
2016 Montazeri K, Wang Z, Nabet B. Plasmonic Effects of Low-Dimensional Electron Gas in Core-Shell Nanowires Frontiers in Optics. DOI: 10.1364/Fio.2016.Jth2A.6  0.313
2015 Wang Z, Currie M, Prete P, Lovergine N, Nabet B. Lasing from As Grown GaAs-AlGaAs Core-Shell Nanowires up to Room Temperature Frontiers in Optics. DOI: 10.1364/Ls.2015.Lth2I.4  0.318
2015 Dianat P, Persano A, Quaranta F, Cola A, Nabet B. Anomalous capacitance enhancement triggered by light Ieee Journal On Selected Topics in Quantum Electronics. 21. DOI: 10.1109/Jstqe.2014.2376701  0.416
2015 Nabet B, Dianat P, Zhao X, Seddik AA, Castro F, Currie M. High-speed high-sensitivity low power photodetector with electron and hole charge plasma Photodetectors: Materials, Devices and Applications. 21-46. DOI: 10.1016/B978-1-78242-445-1.00002-6  0.678
2014 Dianat P, Prusak R, Persano A, Cola A, Quaranta F, Nabet B. An unconventional hybrid variable capacitor with a 2-D electron gas Ieee Transactions On Electron Devices. 61: 445-451. DOI: 10.1109/Ted.2013.2292922  0.387
2014 Nabet B, Currie M, Dianat P, Quaranta F, Cola A. High-Speed, High-Sensitivity Optoelectronic Device with Bilayer Electron and Hole Charge Plasma Acs Photonics. 1: 560-569. DOI: 10.1021/Ph4001229  0.459
2013 Currie M, Dianat P, Persano A, Martucci MC, Quaranta F, Cola A, Nabet B. Performance enhancement of a GaAs detector with a vertical field and an embedded thin low-temperature grown layer. Sensors (Basel, Switzerland). 13: 2475-83. PMID 23429510 DOI: 10.3390/S130202475  0.427
2013 Currie M, Quaranta F, Cola A, Nabet B. Overcoming transit time limitations with collective excitations Optics Infobase Conference Papers. DOI: 10.1364/Fio.2013.Ftu1E.4  0.377
2013 Persano A, Nabet B, Taurino A, Prete P, Lovergine N, Cola A. Photoconduction properties of single GaAs/AlGaAs core-shell nanowires Optics Infobase Conference Papers. DOI: 10.1364/Fio.2013.Fth4D.2  0.339
2013 Dianat P, Persano A, Quaranta F, Cola A, Nabet B. A light-activated quantum capacitance device as a highly tunable variable capacitor Optics Infobase Conference Papers. DOI: 10.1364/Fio.2013.Fth4C.5  0.415
2013 Wang Z, Currie M, Dianat P, Konica G, Prete P, Lovergine N, Nabet B. On dimensional dependence of interaction of light and nano structures Optics Infobase Conference Papers. DOI: 10.1364/Fio.2013.Fth3C.1  0.339
2012 Persano A, Taurino A, Prete P, Lovergine N, Nabet B, Cola A. Photocurrent properties of single GaAs/AlGaAs core-shell nanowires with Schottky contacts. Nanotechnology. 23: 465701. PMID 23093063 DOI: 10.1088/0957-4484/23/46/465701  0.367
2012 Dianat P, Prusak RW, Persano A, Quaranta F, Cola A, Nabet B. Giant light-induced capacitance enhancements in an unconventional capacitor with two-dimensional hole gas 2012 Ieee Photonics Conference, Ipc 2012. 792-793. DOI: 10.1109/IPCon.2012.6358861  0.33
2012 Currie M, Dianat P, Persano A, Cola A, Martucci C, Quaranta F, Nabet B. High-speed high-responsivity low temperature grown GaAs detector 2012 Ieee Photonics Conference, Ipc 2012. 312-313. DOI: 10.1109/IPCon.2012.6358617  0.346
2012 Dianat P, Prusak RW, Quaranta F, Cola A, Nabet B. A planar switchable capacitor with embedded two-dimensional electron system for higher integrations in VLSI and RFIC Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2012.6340074  0.306
2012 Dianat P, Prusak RW, Gallo E, Cola A, Persano A, Quaranta F, Nabet B. A highly tunable heterostructure metal-semiconductor-metal capacitor utilizing embedded 2-dimensional charge Applied Physics Letters. 100. DOI: 10.1063/1.3702466  0.398
2011 Currie M, Quaranta F, Cola A, Gallo EM, Nabet B. Low-temperature grown GaAs heterojunction metal-semiconductor-metal photodetectors improve speed and efficiency Applied Physics Letters. 99. DOI: 10.1063/1.3662392  0.433
2011 Gallo EM, Chen G, Currie M, McGuckin T, Prete P, Lovergine N, Nabet B, Spanier JE. Picosecond response times in GaAs/AlGaAs core/shell nanowire-based photodetectors Applied Physics Letters. 98. DOI: 10.1063/1.3600061  0.425
2011 Persano A, Nabet B, Taurino A, Prete P, Lovergine N, Cola A. Polarization anisotropy of individual core/shell GaAs/AlGaAs nanowires by photocurrent spectroscopy Applied Physics Letters. 98. DOI: 10.1063/1.3578189  0.373
2011 Gu Z, Prete P, Lovergine N, Nabet B. On optical properties of GaAs and GaAs/AlGaAs core-shell periodic nanowire arrays Journal of Applied Physics. 109. DOI: 10.1063/1.3555096  0.377
2010 Gu Z, Nabet B, Prete P, Marzo F, Miccoli I, Lovergine N. On absorption properties of GaAs/AlGaAs nanowire arrays Optics Infobase Conference Papers. DOI: 10.1364/Fio.2010.Jwa40  0.328
2010 Grote R, Osgood RM, Spanier JE, Nabet B. Optimization of a surface plasmon enhanced metal-semiconductor-metal photodetector on gallium arsenide Optics Infobase Conference Papers. DOI: 10.1364/Fio.2010.Fthy3  0.315
2010 Persano A, Nabet B, Currie M, Convertino A, Leo G, Cola A. Single-layer InAs quantum dots for high-performance planar photodetectors near 1.3 μm Ieee Transactions On Electron Devices. 57: 1237-1242. DOI: 10.1109/Ted.2010.2046462  0.407
2010 Chen G, Gallo EM, Burger J, Nabet B, Cola A, Prete P, Lovergine N, Spanier JE. On direct-writing methods for electrically contacting GaAs and Ge nanowire devices Applied Physics Letters. 96. DOI: 10.1063/1.3441404  0.384
2009 Shackleford JA, Grote R, Currie M, Spanier JE, Nabet B. Integrated plasmonic lens photodetector Applied Physics Letters. 94. DOI: 10.1063/1.3086898  0.371
2008 Cao L, Garipcan B, Gallo EM, Nonnenmann SS, Nabet B, Spanier JE. Excitation of local field enhancement on silicon nanowires. Nano Letters. 8: 601-5. PMID 18220440 DOI: 10.1021/Nl0729983  0.393
2008 Zhao X, Currie M, Cola A, Quaranta F, Gallo E, Spanier JE, Nabet B. Time response of two-dimensional gas-based vertical field metal-semiconductor-metal photodetectors Ieee Transactions On Electron Devices. 55: 1762-1770. DOI: 10.1109/Ted.2008.925242  0.405
2008 Cola A, Persano A, Currie M, Convertino A, Lomascolo M, Nabet B. Carrier dynamics in InAs quantum dots investigated by current transient response to quasi-resonant interband excitation Physica E: Low-Dimensional Systems and Nanostructures. 40: 2119-2121. DOI: 10.1016/J.Physe.2007.10.040  0.376
2006 Zhao X, Cola A, Tersigni A, Quaranta F, Gallo E, Spanier JE, Nabet B. Optically modulated high-sensitivity heterostructure varactor Ieee Electron Device Letters. 27: 710-712. DOI: 10.1109/Led.2006.880637  0.381
2005 Cola A, Nabet B, Chen X, Quaranta F. High Speed Heterostructure Metal-Semiconductor-Metal Photodetectors Acta Physica Polonica A. 107: 14-25. DOI: 10.12693/Aphyspola.107.14  0.449
2005 Chen X, Nabet B, Zhao X, Huang HJ, Cola A, Quaranta F, Taurino A, Currie M. Optical and electrical characterization of GaAs-based high-speed and high-sensitivity delta-doped resonant cavity-enhanced HMSM photodetector Ieee Transactions On Electron Devices. 52: 454-464. DOI: 10.1109/Ted.2005.844742  0.459
2005 Ragi R, Romero MA, Nabet B. Modeling the electrical characteristics of schottky contacts in low-dimensional heterostructure devices Ieee Transactions On Electron Devices. 52: 170-175. DOI: 10.1109/Ted.2004.842718  0.412
2005 Cola A, Nabet B, Chen X, Quaranta F. High speed heterostructure metal - Semiconductor - Metal photodetectors Acta Physica Polonica A. 107: 14-25.  0.334
2004 Tait GB, Nabet B. Physical modeling of semiconductor heterodimensional devices for photodetector applications Proceedings of Spie - the International Society For Optical Engineering. 5353: 135-142. DOI: 10.1117/12.529285  0.363
2004 Chen X, Nabet B. A closed-form expression to analyze electronic properties in delta-doped heterostructures Solid-State Electronics. 48: 2321-2327. DOI: 10.1016/J.Sse.2004.04.011  0.377
2004 Nabet B, Romero MA, Cola A, Quaranta F. The role of the AlGaAs doping level on the optical gain of two-dimensional electron gas photodetectors Journal of Electronic Materials. 33: 123-127. DOI: 10.1007/S11664-004-0281-9  0.405
2004 Tait GB, Nabet B. Physical modeling of a novel barrier-enhanced quantum-well photodetector device for optical receivers Microwave and Optical Technology Letters. 40: 224-227. DOI: 10.1002/Mop.11336  0.425
2004 Zhao X, Huang HJ, Chen X, Nabet B. Vertical field HMSM photodetector International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 3: 2328-2331.  0.31
2003 Nabet B, Cola A, Cataldo A, Chen X, Quaranta F. Photodetectors based on heterostructures for opto-electronic applications Ieee Transactions On Microwave Theory and Techniques. 51: 2063-2072. DOI: 10.1109/Tmtt.2003.817463  0.469
2003 Chen X, Nabet B, Cola A, Quaranta F, Currie M. An AlGaAs-GaAs-based RCE MSM photodetector with delta modulation doping Ieee Electron Device Letters. 24: 312-314. DOI: 10.1109/Led.2003.812533  0.451
2003 Zhao X, Huang HJ, Chen X, Nabet B, Cataldo A, Cola A, Quaranta F. Study of dynamic behavior of δ-doped HMSM photodetector Sbmo/Ieee Mtt-S International Microwave and Optoelectronics Conference Proceedings. 81-86.  0.314
2003 Cola A, Nabet B, Chen X, Quaranta F, Cataldo A, Lomascolo M, Taurino A, Currie M. Novel Heterostructure MSM Photodetectors for Gigabit Ethernet Sbmo/Ieee Mtt-S International Microwave and Optoelectronics Conference Proceedings. 75-79.  0.333
2002 Cola A, Quaranta F, Nabet B, Cataldo A. Photodetector with internal aiding field based-on GaAs/AlGaAs heterostructures European Solid-State Device Research Conference. 655-658. DOI: 10.1109/ESSDERC.2002.195016  0.323
2002 Anwar A, Nabet B. Barrier enhancement mechanisms in heterodimensional contacts and their effect on current transport Ieee Transactions On Microwave Theory and Techniques. 50: 68-71. DOI: 10.1109/22.981248  0.403
2002 Castro F, Nabet B, Chen X. Closed-form electric-field profile model for AlGaAs/GaAs heterostructures Journal of Applied Physics. 92: 218-222. DOI: 10.1063/1.1478792  0.387
2002 Chen X, Nabet B, Quaranta F, Cola A, Currie M. Resonant-cavity-enhanced heterostructure metal-semiconductor-metal photodetector Applied Physics Letters. 80: 3222-3224. DOI: 10.1063/1.1470224  0.394
2002 Anwar A, Nabet B, Ragi R, Manzoli JE, Romero MA. Gate controlled 2-DEG varactor for VCO applications in microwave circuits Microelectronics Journal. 33: 495-500. DOI: 10.1016/S0026-2692(01)00142-2  0.436
2001 Nabet B, Quaranta F, Cola A. Heterojunction and heterodimensional devices for optoelectronics Ieee Microwave Magazine. 2: 40-45. DOI: 10.1109/6668.918261  0.432
2001 Castro F, Nabet B. Spatial modulation of the dielectric permmittivity and its effect on the spectral responsivity of heterodimensional photodetectors 2001 International Conference On Modeling and Simulation of Microsystems - Msm 2001. 454-457.  0.311
2000 Anwar A, Nabet B, Culp J. Electrically and optically gate-controlled Schottky/2DEG varactor Ieee Electron Device Letters. 21: 473-475. DOI: 10.1109/55.870605  0.422
2000 Nabet B, Cola A, Quaranta F, Cesareo M, Rossi R, Fucci R, Anwar A. Electron cloud effect on current injection across a Schottky contact Applied Physics Letters. 77: 4007-4009. DOI: 10.1063/1.1333690  0.387
2000 NABET B, CASTRO F, ANWAR A, COLA A. HETERODIMENSIONAL CONTACTS AND OPTICAL DETECTORS International Journal of High Speed Electronics and Systems. 10: 375-386. DOI: 10.1016/S0129-1564(00)00038-6  0.412
2000 Ozelo HFB, De Barros LEM, Nabet B, Neto LG, Romero MA, Ramos ACS, Swart JW. MSM photodetector with an integrated microlens array for improved optical coupling Microwave and Optical Technology Letters. 26: 357-360. DOI: 10.1002/1098-2760(20000920)26:6<357::Aid-Mop3>3.0.Co;2-W  0.313
1999 Anwar A, Nabet B, Culp J, Castro F. Effects of electron confinement on thermionic emission current in a modulation doped heterostructure Journal of Applied Physics. 85: 2663-2666. DOI: 10.1063/1.369627  0.397
1998 Youtz AE, Nabet B. Role of intermediate temperature molecular beam epitaxy grown GaAs defects in tunneling and diffusion Journal of Applied Physics. 84: 2697-2704. DOI: 10.1063/1.368442  0.395
1998 Culp J, Nabet B, Castro F, Anwar A. Intermediate temperature grown GaAs/AlGaAs photodetector with low dark current and high sensitivity Applied Physics Letters. 73: 1562-1564. DOI: 10.1063/1.122219  0.416
1998 Castro F, Nabet B, Culp J. Accurate closed-form expression for sheet carrier density calculations in modulation-doped heterostructures Electronics Letters. 34: 2170-2171. DOI: 10.1049/El:19981450  0.305
1997 Nabet B. A heterojunction metal-semiconductor-metal photodetector Ieee Photonics Technology Letters. 9: 223-225. DOI: 10.1109/68.553099  0.399
1997 Youtz AE, Nabet B, Castro F. Defect state assisted tunneling in intermediate temperature molecular beam epitaxy grown GaAs Journal of Electronic Materials. 26: 372-375. DOI: 10.1007/S11664-997-0104-X  0.355
1996 Liou LC, Nabet B. Simple analytical model of bias dependence of the photocurrent of metal-semiconductor-metal photodetectors. Applied Optics. 35: 15-23. PMID 21068971 DOI: 10.1364/Ao.35.000015  0.356
1996 Tonkin SP, Pinter RB, Nabet B. Stability of a class of directionally sensitive asymmetric nonlinear neural networks Neural Networks. 9: 555-565. DOI: 10.1016/0893-6080(95)00121-2  0.656
1995 Nabet B, Pinter RB, Darling RB, Wolpert S, Micheli-Tzanakou E. Comments on "Silicon models of lateral inhibition" [with reply]. Ieee Transactions On Neural Networks / a Publication of the Ieee Neural Networks Council. 6: 1560-1. PMID 18263452 DOI: 10.1109/72.471351  0.647
1995 Tousley BC, Davids N, Sayles AH, Paolella A, Cooke P, Lemoune ML, Moerkirk RP, Nabet B. Broad-Bandwidth, High-Responsivity Intermediate Growth Temperature GaAs MSM Photodetectors Ieee Photonics Technology Letters. 7: 1483-1485. DOI: 10.1109/68.477290  0.377
1995 Nabet B, Youtz A, Castro F, Cooke P, Paolella A. Current transport in as-grown and annealed intermediate temperature molecular beam epitaxy grown GaAs Applied Physics Letters. 67: 1748. DOI: 10.1063/1.115037  0.354
1995 Tousley BC, Davids N, Sayles AH, Paolella A, Cooke P, Lemoune ML, Moerkirk RP, Nabet B, Liou LC. Broad bandwidth, large dynamic range intermediate growth temperature GaAs MSM photodetectors Leos Summer Topical Meeting.  0.32
1994 Nabet B, Paolella A, Cooke P, Lemuene ML, Moerkirk RP, Liou LC. Intermediate temperature molecular beam-epitaxy growth for design of large-area metal-semiconductor-metal photodetectors Applied Physics Letters. 64: 3151-3153. DOI: 10.1063/1.111322  0.374
1992 Nabet B, Darling RB, Pinter RB. Implementation of front-end processor neural networks Neural Networks. 5: 891-902. DOI: 10.1016/S0893-6080(05)80085-1  0.664
1989 Darling RB, Ray S, Nabet B, Carter EL, Samaras JE. Epitaxial n+ Layer GaAs Mesa-Finger Interdigital Surface Photodetectors Ieee Electron Device Letters. 10: 461-463. DOI: 10.1109/55.43100  0.344
1988 Nabet B, Darling RB. Implementation of optical sensory neural networks by simple discrete and monolithic circuits Neural Networks. 1: 396-398. DOI: 10.1016/0893-6080(88)90422-4  0.333
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