| Year |
Citation |
Score |
| 2006 |
Özgür U, Gu X, Chevtchenko S, Spradlin J, Cho SJ, Morkoç H, Pollak FH, Everitt HO, Nemeth B, Nause JE. Thermal conductivity of bulk ZnO after different thermal treatments Journal of Electronic Materials. 35: 550-555. DOI: 10.1007/S11664-006-0098-9 |
0.307 |
|
| 2005 |
Huang YS, Pollak FH. Non-destructive, room temperature characterization of wafer-sized III-V semiconductor device structures using contactless electromodulation and wavelength-modulated surface photovoltage spectroscopy Physica Status Solidi (a) Applications and Materials Science. 202: 1193-1207. DOI: 10.1002/Pssa.200460900 |
0.415 |
|
| 2004 |
Birdwell AG, Shaffner TJ, Chandler-Horowitz D, Buh GH, Rebien M, Henrion W, Stauß P, Behr G, Malikova L, Pollak FH, Littler CL, Glosser R, Collins S. Excitonic transitions in β-FeSi 2 epitaxial films and single crystals Journal of Applied Physics. 95: 2441-2447. DOI: 10.1063/1.1643778 |
0.361 |
|
| 2004 |
Muñoz M, Lu H, Guo S, Zhou X, Tamargo MC, Pollak FH, Huang YS, Trallero-Giner C, Rodríguez AH. Contactless electroreflectance studies of II–VI nanostructures grown by molecular beam epitaxy Physica Status Solidi (B). 241: 546-549. DOI: 10.1002/Pssb.200304278 |
0.369 |
|
| 2003 |
Florescu DI, Lee DS, Ting SM, Ramer JC, Pollak FH. Correlation of Thermal with Structural and Optical Properties of High Quality GaN/Sapphire (0001) Grown by Metalorganic Chemical Vapor Deposition Japanese Journal of Applied Physics. 42: 4444-4447. DOI: 10.1143/Jjap.42.4444 |
0.376 |
|
| 2003 |
Liang JS, Wang SD, Huang YS, Tien CW, Chang YM, Chen CW, Li NY, Tiong KK, Pollak FH. Surface photovoltage spectroscopy as a valuable nondestructive characterization technique for GaAs/GaAlAs vertical-cavity surface-emitting laser structures Journal of Physics: Condensed Matter. 15: 55-66. DOI: 10.1088/0953-8984/15/2/306 |
0.376 |
|
| 2003 |
Malikova L, Pollak FH, Masut RA, Desjardins P, Mourokh LG. Temperature dependent contactless electroreflectance study of intersubband transitions in a self-assembled InAs/InP (001) quantum dot structure Journal of Applied Physics. 94: 4995-4998. DOI: 10.1063/1.1609651 |
0.361 |
|
| 2003 |
Huang YS, Pollak FH, Park SS, Lee KY, Morkoç H. Contactless electroreflectance, in the range of 20 K<T<300 K, of freestanding wurtzite GaN prepared by hydride-vapor-phase epitaxy Journal of Applied Physics. 94: 899-903. DOI: 10.1063/1.1582230 |
0.347 |
|
| 2003 |
Muñoz M, Huang YS, Pollak FH, Yang H. Optical constants of cubic GaN/GaAs(001): Experiment and modeling Journal of Applied Physics. 93: 2549-2553. DOI: 10.1063/1.1540725 |
0.357 |
|
| 2003 |
Liang JS, Wang SD, Huang YS, Malikova L, Pollak FH, Debray JP, Hoffman R, Amtout A, Stall RA. Differential surface photovoltage spectroscopy characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure Journal of Applied Physics. 93: 1874-1878. DOI: 10.1063/1.1538323 |
0.399 |
|
| 2002 |
Chaldyshev VV, Pollak FH, Pophristic M, Guo SP, Ferguson I. Micro-Raman investigation of thin lateral epitaxial overgrown GaN/sapphire(0001) films Journal of Applied Physics. 92: 6601-6606. DOI: 10.1063/1.1519342 |
0.3 |
|
| 2002 |
Muñoz M, Holden TM, Pollak FH, Kahn M, Ritter D, Kronik L, Cohen GM. Optical constants of In0.53Ga0.47As/InP: Experiment and modeling Journal of Applied Physics. 92: 5878-5885. DOI: 10.1063/1.1515374 |
0.343 |
|
| 2002 |
Zou J, Kotchetkov D, Balandin AA, Florescu DI, Pollak FH. Thermal conductivity of GaN films: Effects of impurities and dislocations Journal of Applied Physics. 92: 2534-2539. DOI: 10.1063/1.1497704 |
0.341 |
|
| 2002 |
Wang SD, Liang JS, Huang YS, Tien CW, Chang YM, Chen CW, Li NY, Tiong KK, Pollak FH. Angle-dependent differential-photovoltage spectroscopy for the characterization of a GaAs/GaAlAs based vertical-cavity surface-emitting laser structure Journal of Applied Physics. 92: 2350-2353. DOI: 10.1063/1.1497697 |
0.39 |
|
| 2002 |
Huang YS, Malikova L, Pollak FH, Debray J-, Hoffman R, Amtout A, Stall RA. Surface photovoltage spectroscopy and normal-incidence reflectivity characterization of a 1.3 μm InGaAlAs/InP vertical-cavity surface-emitting laser structure Journal of Applied Physics. 91: 6203-6205. DOI: 10.1063/1.1467396 |
0.35 |
|
| 2002 |
Liang JS, Wang SD, Huang YS, Tien CW, Chang YM, Chen CW, Li NY, Lin D, Pollak FH. Polarized edge-incident photovoltage spectroscopy and reflectance characterization of a GaAs/GaAlAs vertical-cavity surface-emitting laser structure Applied Physics Letters. 80: 752-754. DOI: 10.1063/1.1445463 |
0.387 |
|
| 2002 |
Florescu DI, Pollak FH, Lanford WB, Khan F, Adesida I, Molnar RJ. Ion-beam processing effects on the thermal conductivity ofn-GaN/sapphire (0001) Journal of Applied Physics. 91: 1277-1280. DOI: 10.1063/1.1428798 |
0.332 |
|
| 2002 |
Florescu DI, Mourokh LG, Pollak FH, Look DC, Cantwell G, Li X. High spatial resolution thermal conductivity of bulk ZnO (0001) Journal of Applied Physics. 91: 890-892. DOI: 10.1063/1.1426234 |
0.304 |
|
| 2002 |
Cheng YT, Huang YS, Lin DY, Pollak FH, Evans KR. Surface photovoltage spectroscopy characterization of the GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles Physica E: Low-Dimensional Systems and Nanostructures. 14: 313-322. DOI: 10.1016/S1386-9477(01)00233-8 |
0.433 |
|
| 2002 |
Chaldyshev VV, Pollak FH, Pophristic M, Gou SP, Ferguson I. Micro-Raman investigation of the n-dopant distribution in lateral epitaxial overgrown GaN/Sapphire (0001) Journal of Electronic Materials. 31: 631-634. DOI: 10.1007/S11664-002-0134-3 |
0.355 |
|
| 2001 |
Mishori B, Muñoz M, Mourokh L, Pollak FH, DeBray JP, Ting S, Ferguson I. Surface Photovoltage Spectroscopy of InGaN/GaN/AlGaN Multiple Quantum Well Light Emitting Diodes Mrs Proceedings. 680. DOI: 10.1557/Proc-680-E4.2 |
0.352 |
|
| 2001 |
Muñoz M, Pollak FH, Kahn M, Ritter D, Kronik L, Cohen GM. Burstein-Moss shift ofn-dopedIn0.53Ga0.47As/InP Physical Review B. 63. DOI: 10.1103/Physrevb.63.233302 |
0.364 |
|
| 2001 |
Muñoz M, Pollak FH, Holden T. Comment on 'modelling the optical constants of GaAs: Excitonic effects at E1, E1 + Δ1 critical points' Semiconductor Science and Technology. 16: 281-282. DOI: 10.1088/0268-1242/16/4/401 |
0.336 |
|
| 2001 |
Kotchetkov D, Zou J, Balandin AA, Florescu DI, Pollak FH. Effect of dislocations on thermal conductivity of GaN layers Applied Physics Letters. 79: 4316-4318. DOI: 10.1063/1.1427153 |
0.328 |
|
| 2001 |
Liang JS, Huang YS, Tien CW, Chang YM, Chen CW, Li NY, Li P, Pollak FH. Surface photovoltage spectroscopy characterization of a GaAs/GaAlAs vertical-cavity-surface-emitting-laser structure: Angle dependence Applied Physics Letters. 79: 3227-3229. DOI: 10.1063/1.1418027 |
0.375 |
|
| 2001 |
Lin DY, Huang YS, Shou TS, Tiong KK, Pollak FH. Temperature-dependent contactless electroreflectance and photoluminescence study of GaAlAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures Journal of Applied Physics. 90: 6421-6427. DOI: 10.1063/1.1416854 |
0.391 |
|
| 2001 |
Cheng YT, Huang YS, Lin DY, Tiong KK, Pollak FH, Evans KR. Surface photovoltage spectroscopy characterization of a GaAIAs/InGaAs/ GaAs pseudomorphic high electron mobility transistor structure Applied Physics Letters. 79: 949-951. DOI: 10.1063/1.1392974 |
0.402 |
|
| 2001 |
Mourokh LG, Malikova L, Pollak FH, Shi BQ, Nguyen C. Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice Journal of Applied Physics. 89: 2500-2502. DOI: 10.1063/1.1340001 |
0.325 |
|
| 2001 |
Pollak FH. Contactless electromodulation and surface photovoltage spectroscopy for the nondestructive, room temperature characterization of wafer-scale III-V semiconductor device structures Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 80: 178-183. DOI: 10.1016/S0921-5107(00)00618-8 |
0.387 |
|
| 2001 |
Pollak FH. Study of semiconductor surfaces and interfaces using electromodulation Surface and Interface Analysis. 31: 938-953. DOI: 10.1002/Sia.1131 |
0.394 |
|
| 2000 |
Florescu DI, Asnin VA, Mourokh LG, Pollak FH, Molnar RJ. Doping dependence of the thermal conductivity of hydride vapor phase epitaxy grown n-GaN/Sapphire (0001) using a scanning thermal microscope Materials Research Society Symposium - Proceedings. 595. DOI: 10.1557/S1092578300004476 |
0.359 |
|
| 2000 |
Florescu D, Pollak FH, Lanfor WB, Khan F, Adesida I, Molnar R. Plasma-Induced Effects on The Thermal Conductivity of Hydride Vapor Phase Epitaxy Grown n-GaN/Sapphire (0001) Mrs Proceedings. 639. DOI: 10.1557/Proc-639-G11.57 |
0.34 |
|
| 2000 |
Luo Y, Elmoumni A, Guo SP, Tamargo MC, Kelly S, Ghaemi H, Asnin V, Tomkiewicz M, Pollak FH, Chen YC. Growth and characterization of patterned ZnCdSe structures for application in integrated R-G-B II-VI light-emitting diodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1522-1525. DOI: 10.1116/1.591419 |
0.33 |
|
| 2000 |
Muñoz M, Pollak FH, Zakia MB, Patel NB, Herrera-Pérez JL. Temperature dependence of the energy and broadening parameter of the fundamental band gap of GaSb and Ga 1 − x In x As y Sb 1 − y / GaSb ( 0.07 x 0 . 2 2 , 0.05 y 0 . 1 9 ) quaternary alloys using infrared photoreflectance Physical Review B. 62: 16600-16604. DOI: 10.1103/Physrevb.62.16600 |
0.358 |
|
| 2000 |
Chen TH, Huang YS, Lin DY, Pollak FH, Goorsky MS, Streit DC, Wojtowicz M. Room temperature polarized photoreflectance characterization of GaAlAs/InGaAs/GaAs high electron mobility transistor structures including the influence of strain relaxation Journal of Applied Physics. 88: 883-888. DOI: 10.1063/1.373751 |
0.352 |
|
| 2000 |
Muñoz M, Wei K, Pollak FH, Freeouf JL, Wang CA, Charache GW. Optical constants of Ga1−xInxAsySb1−y lattice matched to GaSb (001): Experiment and modeling Journal of Applied Physics. 87: 1780-1787. DOI: 10.1063/1.372092 |
0.327 |
|
| 2000 |
Luo Y, Guo SP, Maksimov O, Tamargo MC, Asnin V, Pollak FH, Chen YC. Patterned three-color ZnCdSe/ZnCdMgSe quantum-well structures for integrated full-color and white light emitters Applied Physics Letters. 77: 4259-4261. DOI: 10.1063/1.1330229 |
0.331 |
|
| 2000 |
Florescu DI, Asnin VM, Pollak FH, Jones AM, Ramer JC, Schurman MJ, Ferguson I. Thermal conductivity of fully and partially coalesced lateral epitaxial overgrown GaN/sapphire (0001) by scanning thermal microscopy Applied Physics Letters. 77: 1464-1466. DOI: 10.1063/1.1308057 |
0.309 |
|
| 2000 |
Florescu DI, Asnin VM, Pollak FH, Molnar RJ, Wood CEC. High spatial resolution thermal conductivity and Raman spectroscopy investigation of hydride vapor phase epitaxy grown n-GaN/sapphire (0001): Doping dependence Journal of Applied Physics. 88: 3295-3300. DOI: 10.1063/1.1289072 |
0.349 |
|
| 2000 |
Huang YS, Malikova L, Pollak FH, Shen H, Pamulapati J, Newman P. Surface photovoltage spectroscopy, photoreflectance, and reflectivity characterization of an InGaAs/GaAs/GaAlAs vertical-cavity surface-emitting laser including temperature dependence Applied Physics Letters. 77: 37-39. DOI: 10.1063/1.126869 |
0.366 |
|
| 2000 |
Chen TH, Huang YS, Shou TS, Tiong KK, Lin DY, Pollak FH, Goorsky MS, Streit DC, Wojtowicz M. Room temperature polarized photoreflectance and photoluminescence characterization of AlGaAs/InGaAs/GaAs high electron mobility transistor structures Physica E: Low-Dimensional Systems and Nanostructures. 8: 297-305. DOI: 10.1016/S1386-9477(00)00165-X |
0.402 |
|
| 2000 |
Malikova L, Pollak FH, Gorea O, Korotcov A. Modulation spectroscopy study of a strained layer GaAs/GaAsP multiple quantum well structure Journal of Electronic Materials. 29: 1346-1350. DOI: 10.1007/S11664-000-0136-Y |
0.432 |
|
| 1999 |
Muñoz M, Wei K, Pollak FH, Freeouf JL, Charache GW. Spectral ellipsometry of GaSb: Experiment and modeling Physical Review B. 60: 8105-8110. DOI: 10.1103/Physrevb.60.8105 |
0.329 |
|
| 1999 |
Lin DY, Huang YS, Tiong KK, Pollak FH, Evans KR. Room-temperature phototransmittance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles Semiconductor Science and Technology. 14: 103-109. DOI: 10.1088/0268-1242/14/1/017 |
0.432 |
|
| 1999 |
Jaeger A, Sun WD, Pollak FH, Reynolds CL, Geva M. Characterization of p-dopant interdiffusion in 1.3 μm InGaAsP/InP laser structures using modulation spectroscopy Journal of Applied Physics. 86: 2020-2024. DOI: 10.1063/1.371150 |
0.333 |
|
| 1999 |
Charache GW, DePoy DM, Raynolds JE, Baldasaro PF, Miyano KE, Holden T, Pollak FH, Sharps PR, Timmons ML, Geller CB, Mannstadt W, Asahi R, Freeman AJ, Wolf W. Moss–Burstein and plasma reflection characteristics of heavily doped n-type InxGa1−xAs and InPyAs1−y Journal of Applied Physics. 86: 452-458. DOI: 10.1063/1.370751 |
0.352 |
|
| 1999 |
Lin D, Liang SH, Huang YS, Tiong KK, Pollak FH, Evans KR. Room-temperature photoreflectance and photoluminescence characterization of the AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistor structures with varied quantum well compositional profiles Journal of Applied Physics. 85: 8235-8241. DOI: 10.1063/1.370664 |
0.436 |
|
| 1999 |
Feng ZC, Armour E, Ferguson I, Stall RA, Holden T, Malikova L, Wan JZ, Pollak FH, Pavlosky M. Nondestructive assessment of In0.48(Ga1−xAlx)0.52P films grown on GaAs (001) by low pressure metalorganic chemical vapor deposition Journal of Applied Physics. 85: 3824-3831. DOI: 10.1063/1.369752 |
0.383 |
|
| 1999 |
Wei K, Pollak FH, Freeouf JL, Shvydka D, Compaan AD. Optical properties of CdTe1−xSx (0⩽x⩽1): Experiment and modeling Journal of Applied Physics. 85: 7418-7425. DOI: 10.1063/1.369372 |
0.339 |
|
| 1999 |
Jaeger A, Sun WD, Pollak FH, Reynolds CL, Geva M, Stampone DV, Focht MW, Raisky OY, Wang WB, Alfano RR. Characterization Of Ingaasp/Inp P-I-N Solar Cell Structures Using Modulation Spectroscopy And Secondary Ion Mass Spectrometry Journal of Applied Physics. 85: 1921-1926. DOI: 10.1063/1.369170 |
0.345 |
|
| 1999 |
Asnin VM, Pollak FH, Ramer J, Schurman M, Ferguson I. High spatial resolution thermal conductivity of lateral epitaxial overgrown GaN/sapphire (0001) using a scanning thermal microscope Applied Physics Letters. 75: 1240-1242. DOI: 10.1063/1.124654 |
0.311 |
|
| 1999 |
Huang YS, Sun WD, Malikova L, Pollak FH, Ferguson I, Hou H, Feng ZC, Ryan T, Fantner EB. Room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure Applied Physics Letters. 74: 1851-1853. DOI: 10.1063/1.123690 |
0.371 |
|
| 1999 |
Sun WD, Pollak FH, Folkes PA, Gumbs G. Band-bending effect of low temperature GaAs on a pseudomorphic modulation-doped field-effect transistor Journal of Electronic Materials. 28. DOI: 10.1007/S11664-999-0146-3 |
0.442 |
|
| 1999 |
Pollak FH, Muñoz M, Holden T, Wei K, Asnin VM. Modeling the Optical Constants of Diamond- and Zincblende-Type Semiconductors: Discrete and Continuum Exciton Effects at E0 and E1 Physica Status Solidi B-Basic Solid State Physics. 215: 33-38. DOI: 10.1002/(Sici)1521-3951(199909)215:1<33::Aid-Pssb33>3.0.Co;2-A |
0.341 |
|
| 1999 |
Sun WD, Pollak FH, Folkes PA, Gumbs G. Band-bending effect of low temperature GaAs on a pseudomorphic modulation-doped field-effect transistor Journal of Electronic Materials. 28. |
0.334 |
|
| 1998 |
Holden T, Sun WD, Pollak FH, Freeouf JL, McInturff D, Woodall JM. Reflection anisotropy spectroscopy study of the near-surface electric fields in undoped, n- and p-doped low-temperature grown GaAs (001) Physical Review B. 58: 7795-7798. DOI: 10.1103/Physrevb.58.7795 |
0.362 |
|
| 1998 |
Gavrilenko VI, Pollak FH. Surface-induced optical anisotropy of the (001) and (113) silicon surfaces Physical Review B - Condensed Matter and Materials Physics. 58: 12964-12969. DOI: 10.1103/Physrevb.58.12964 |
0.327 |
|
| 1998 |
Krystek W, Leibovitch M, Sun WD, Pollak FH, Gumbs G, Burnham GT, Wang X. Characterization of a graded index of refraction separate confinement heterostructure (GRINSCH) laser structure using contactless electroreflectance Journal of Applied Physics. 84: 2229-2235. DOI: 10.1063/1.368288 |
0.394 |
|
| 1998 |
Sun WD, Pollak FH. On the origins of the Franz-Keldysh oscillations observed in the electromodulation spectra of graded emitter Ga1-xAlxAs/GaAs heterojunction bipolar transistor structures Journal of Applied Physics. 83: 4447-4453. DOI: 10.1063/1.367205 |
0.327 |
|
| 1998 |
Dunford RB, Popovic D, Pollak FH, Noble TF. Integer quantum Hall effect in a high electron density Al0.2Ga0.8As/In0.2Ga0.8As/GaAs quantum well Journal of Applied Physics. 83: 3144-3147. DOI: 10.1063/1.367128 |
0.365 |
|
| 1998 |
Ashkenasy N, Leibovitch M, Shapira Y, Pollak FH, Burnham GT, Wang X. Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure Journal of Applied Physics. 83: 1146-1149. DOI: 10.1063/1.366807 |
0.379 |
|
| 1998 |
Huang YS, Sun WD, Malikova L, Pollak FH, Low TS, Chang JSC. Franz–Keldysh oscillations from combined space-charge and grading fields as observed in graded emitter GaAlAs/GaAs heterojunction bipolar transistor structures Applied Physics Letters. 73: 1215-1217. DOI: 10.1063/1.122131 |
0.338 |
|
| 1998 |
Huang YS, Sun WD, Pollak FH, Freeouf JL, Calder ID, Mallard RE. Contactless electroreflectance characterization of GaInP/GaAs heterojunction bipolar transistor structures Applied Physics Letters. 73: 214-216. DOI: 10.1063/1.121759 |
0.332 |
|
| 1998 |
Krystek W, Pollak FH, Feng ZC, Schurman M, Stall RA. Determination of the carrier-type at III-nitride semiconductor surfaces/interfaces using contactless electroreflectance Applied Physics Letters. 72: 1353-1355. DOI: 10.1063/1.120991 |
0.355 |
|
| 1998 |
Malikova L, Pollak FH, Bhat R. Composition and temperature dependence of the direct band gap of GaAs1-xNx (0≤x≤0.0232) using contactless electroreflectance Journal of Electronic Materials. 27: 484-487. DOI: 10.1007/S11664-998-0181-5 |
0.373 |
|
| 1997 |
Krystek W, Pollak FH, Feng ZC, Schurman M, Stall RA. Nondestructive, Room Temperature Determination Of The Nature Of The Band-Bending (Carrier Type) In Group III Nitrides Using Contactless Electroreflectance And Surface Photovoltage Spectroscopy Mrs Proceedings. 482. DOI: 10.1557/Proc-482-573 |
0.372 |
|
| 1997 |
Li CF, Huang YS, Malikova L, Pollak FH. Temperature dependence of the energies and broadening parameters of the interband excitonic transitions in wurtzite GaN Physical Review B - Condensed Matter and Materials Physics. 55: 9251-9254. DOI: 10.1103/Physrevb.55.9251 |
0.38 |
|
| 1997 |
Zeng L, Yang BX, Shewareged B, Tamargo MC, Wan JZ, Pollak FH, Snoeks E, Zhao L. Determination of defect density in ZnCdMgSe layers grown on InP using a chemical etch Journal of Applied Physics. 82: 3306-3309. DOI: 10.1063/1.365638 |
0.302 |
|
| 1997 |
Wan JZ, Pollak FH, Dorfman BF. Micro-Raman study of diamondlike atomic-scale composite films modified by continuous wave laser annealing Journal of Applied Physics. 81: 6407-6414. DOI: 10.1063/1.364421 |
0.307 |
|
| 1997 |
Aigouy L, Holden T, Pollak FH, Ledentsov NN, Ustinov WM, Kop’ev PS, Bimberg D. Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure Applied Physics Letters. 70: 3329-3331. DOI: 10.1063/1.119160 |
0.359 |
|
| 1997 |
Aigouy L, Pollak FH, Gumbs G. Micro-electroreflectance and photoreflectance characterization of the bias dependence of the quantum confined Stark effect in a fabricated 0.98 μm InGaAs/GaAs/InGaP laser Applied Physics Letters. 70: 2562-2564. DOI: 10.1063/1.118919 |
0.38 |
|
| 1997 |
Holden T, Pollak FH, Freeouf JL, McInturff D, Gray JL, Lundstrom MS, Woodall JM. Reflection anisotropy spectroscopy study of the near surface electric field in low-temperature grown GaAs (001) Applied Physics Letters. 70: 1107-1109. DOI: 10.1063/1.118499 |
0.394 |
|
| 1997 |
Kelly S, Pollak FH, Tomkiewicz M. Raman spectroscopy as a morphological probe for TiO2 aerogels Journal of Physical Chemistry B. 101: 2730-2734. DOI: 10.1021/Jp962747A |
0.307 |
|
| 1997 |
Malikova L, Huang YS, Pollak FH, Feng ZC, Schurman M, Stall RA. Temperature dependence of the energies and broadening parameters of the excitonic interband transitions in Ga0.95Al0.05N Solid State Communications. 103: 273-278. DOI: 10.1016/S0038-1098(97)00160-9 |
0.376 |
|
| 1997 |
Aigouy L, Pollak FH, Petruzzello J, Shahzad K. Observation of excitonic features in ZnSe/ZnMgSSe multiple quantum wells by normalized Kelvin probe spectroscopy at low temperatures Solid State Communications. 102: 877-882. DOI: 10.1016/S0038-1098(97)00114-2 |
0.404 |
|
| 1997 |
Wan JZ, Pollak FH, Brebner JL, Leonelli R. Band-to-band transitions and free exciton states in low-symmetry crystalline GaTe Solid State Communications. 102: 17-21. DOI: 10.1016/S0038-1098(96)00699-0 |
0.387 |
|
| 1996 |
Malikova LV, Wan JZ, Pollak FH, Simmons JG, Thompson DA. Contactless Electroreflectance Study of InxGa1-xAs/InP Multiple Quantum Well Structures Including the Observation of Surface/Interface Electric Fields Mrs Proceedings. 448. DOI: 10.1557/Proc-448-481 |
0.354 |
|
| 1996 |
Leibovitch M, Ram P, Malikova L, Pollak FH, Freeouf JL, Kronik L, Mishori B, Shapira Y, Clawson AR, Hanson CM. Reflection anisotropy spectroscopy, surface photovoltage spectroscopy, and contactless electroreflectance investigation of the InP/In0.53Ga0.47As(001) heterojunction system Journal of Vacuum Science & Technology B. 14: 3089-3094. DOI: 10.1116/1.589069 |
0.378 |
|
| 1996 |
Chi WS, Lin D, Huang YS, Qiang H, Pollak FH, Mathine DL, Maracas GN. Temperature dependence of quantized states in an InGaAs/GaAs strained asymmetric triangular quantum well Semiconductor Science and Technology. 11: 345-351. DOI: 10.1088/0268-1242/11/3/012 |
0.43 |
|
| 1996 |
Lin DY, Lin FC, Huang YS, Qiang H, Pollak FH, Mathine DL, Maracas GN. Piezoreflectance and photoreflectance study of GaAs/AlGaAs digital alloy compositional graded structures Journal of Applied Physics. 79: 460-466. DOI: 10.1063/1.360852 |
0.417 |
|
| 1996 |
Moneger S, Qiang H, Pollak FH, Mathine DL, Droopad R, Maracas GN. Contactless electroreflectance characterization of three InGaAs quantum wells placed in a GaAs/AlGaAs resonant cavity Solid-State Electronics. 39: 871-874. DOI: 10.1016/0038-1101(95)00388-6 |
0.397 |
|
| 1995 |
Yin Y, Yan D, Pollak FH, Hybertsen MS, Vandenberg JM, Bean JC. Temperature dependence of the fundamental direct transitions of bulk Ge and two Ge/SiGe multiple-quantum-well structures. Physical Review. B, Condensed Matter. 52: 8951-8958. PMID 9979883 DOI: 10.1103/Physrevb.52.8951 |
0.388 |
|
| 1995 |
Krystek W, Leibovitch M, Pollak FH, Gumbs G, Konopelski T. Room Temperature Contactless Electromodulation Characterization of a Wafer-Sized InGaAs/GaAs/GaAlAs Grinsch Laser Structure Mrs Proceedings. 406: 241. DOI: 10.1557/Proc-406-241 |
0.408 |
|
| 1995 |
Pollak FH. Effects of Strain on the Electronic and Vibrational Properties of Semiconductors and Semiconductor Microstructures Mrs Proceedings. 405. DOI: 10.1557/Proc-405-3 |
0.338 |
|
| 1995 |
Pollak FH, Krystek W, Leibovitch M, Gray ML, Hobson WS. Contactless Electromodulation for the Nondestructive, Room-Temperature Analysis of Wafer-Sized Semiconductor Device Structures Ieee Journal On Selected Topics in Quantum Electronics. 1: 1002-1010. DOI: 10.1109/2944.488398 |
0.382 |
|
| 1995 |
Lin FC, Chi WS, Huang YS, Qiang H, Pollak FH, Mathine DL, Maracas GN. Piezoreflectance study of a GaAs/Al0.23Ga0.77As asymmetric triangular quantum well heterostructure Semiconductor Science and Technology. 10: 1009-1016. DOI: 10.1088/0268-1242/10/7/018 |
0.403 |
|
| 1995 |
Pollak FH, Qiang H, Yan D, Krystek W, Moneger S. Nondestructive, room temperature analysis/qualification of wafer-sized semiconductor device structures using contactless electromodulation spectroscopy Solid State Electronics. 38: 1121-1129. DOI: 10.1016/0038-1101(94)00281-J |
0.371 |
|
| 1995 |
Moneger S, Qiang H, Pollak FH, Noble TF. Contactless electroreflectance study of a GaAIAs/lnGaAs/ GaAs/GaAIAs step quantum well structure Journal of Electronic Materials. 24: 1341-1344. DOI: 10.1007/Bf02655445 |
0.42 |
|
| 1995 |
Huang YS, Chi WS, Qiang H, Pollak FH, Mathine DL, Maracas GN. Modulation spectroscopy study of an InGaAs/GaAs-strained asymmetric triangular quantum well heterostructure Il Nuovo Cimento D. 17: 1499-1503. DOI: 10.1007/Bf02457233 |
0.404 |
|
| 1994 |
Gumbs G, Huang D, Qiang H, Pollak FH, Wang PD, Sotomayor Torres CM, Holland MC. Electromodulation spectroscopy of an array of modulation-doped GaAs/Ga1-xAlxAs quantum dots: Experiment and theory. Physical Review. B, Condensed Matter. 50: 10962-10969. PMID 9975202 DOI: 10.1103/Physrevb.50.10962 |
0.337 |
|
| 1994 |
Chi W, Huang Y, Qiang H, Pollak FH, Pettit DG, Woodall JM. Temperature Dependence of Quantized States in Strained-Layer In0.21Ga0.79As/GaAs Single Quantum Well Japanese Journal of Applied Physics. 33: 966-970. DOI: 10.1143/Jjap.33.966 |
0.422 |
|
| 1994 |
Qiang H, Pollak FH, Shumt K, Takiguchi Y, Alfano RR, Fang SF, Morkoč H. Effects of uniaxial stress on the optical properties of GaAs and GaAs/Ga1−xAl1−x As single quantum wells grown on Si(001) substrates Philosophical Magazine B. 70: 381-395. DOI: 10.1080/01418639408240214 |
0.41 |
|
| 1994 |
Yan D, Look E, Yin X, Pollak FH, Woodall JM. Air stabilized (001) p-type GaAs fabricated by molecular beam epitaxy with reduced surface state density Applied Physics Letters. 65: 186-188. DOI: 10.1063/1.113035 |
0.362 |
|
| 1994 |
Qiang H, Pollak FH, Tang Y‐, Wang PD, Torres CMS. Characterization of process‐induced strains in GaAs/Ga0.7Al0.3As quantum dots using room‐temperature photoreflectance Applied Physics Letters. 64: 2830-2832. DOI: 10.1063/1.111439 |
0.357 |
|
| 1994 |
QIANG H, LOOK E, POLLAK F, SHUM K, TAKIGUCHI Y, ALFANO R, FANG S, MORKOC H. Photoreflectance study of GaAs and GaAs/GaAlAs single quantum wells grown on (001) Si substrates Solar Energy Materials and Solar Cells. 32: 405-411. DOI: 10.1016/0927-0248(94)90103-1 |
0.402 |
|
| 1994 |
Qiang H, Huang YS, Pollak FH, Chi WS, Mathine DL, Maracas GN. Electromodulation spectroscopy study of a GaAs/GaAlAs asymmetric triangular quamtum well structure Solid-State Electronics. 37: 893-897. DOI: 10.1016/0038-1101(94)90321-2 |
0.423 |
|
| 1994 |
Qiang H, Yin Y, Yan D, Pollak FH, Gumbs G, Huang D, Noble TF. Two-dimensional electron gas effects in the electromodulation spectra from a pseudomorphic GaAlAs/InGaAs/GaAs modulation-doped quantum well structure Journal of Luminescence. 60: 816-818. DOI: 10.1016/0022-2313(94)90286-0 |
0.377 |
|
| 1994 |
Pollak FH, Qiang H, Yan D, Yin Y, Krystek W. Analyzing semiconductor devices using modulation spectroscopy Jom. 46: 55-59. DOI: 10.1007/Bf03222585 |
0.369 |
|
| 1993 |
Gumbs G, Huang D, Yin Y, Qiang H, Yan D, Pollak FH, Noble TF. Many-body effects in the electromodulation spectra of modulation-doped quantum wells: Theory and experiment. Physical Review. B, Condensed Matter. 48: 18328-18331. PMID 10008487 DOI: 10.1103/Physrevb.48.18328 |
0.38 |
|
| 1993 |
Pollak FH, Qiang H. External and/or internal stress effects on the optical properties of semiconductor microstructures Japanese Journal of Applied Physics. 32: 101. DOI: 10.7567/Jjaps.32S1.101 |
0.375 |
|
| 1993 |
Qiang H, Yan D, Yin Y, Pollak FH. Modulation Spectroscopy Characterization of Semiconductor Heterostructures Mrs Proceedings. 326. DOI: 10.1557/Proc-326-513 |
0.304 |
|
| 1993 |
Wang PD, Torres CMS, Holland MC, Qiang H, Pollak FH, Gumbs G. Photoreflectance Study of Modulation-Doped GaAs/GaAlAs Quantum Dots Fabricated by Reactive-Ion Etching Mrs Proceedings. 324: 187. DOI: 10.1557/Proc-324-187 |
0.328 |
|
| 1993 |
Pollak FH. Contactless electromodulation investigations of surface/interface electric fields in semiconductor microstructures Journal of Vacuum Science & Technology B. 11: 1710-1716. DOI: 10.1116/1.586510 |
0.364 |
|
| 1993 |
Woodall JM, Kirchner PD, Freeouf JL, McInturff DT, Melloch MR, Pollak FH. The Continuing Drama of the Semiconductor Interface Philosophical Transactions of the Royal Society A. 344: 521-532. DOI: 10.1098/Rsta.1993.0105 |
0.332 |
|
| 1993 |
Chen JH, Chi WS, Huang YS, Yin Y, Pollak FH, Pettit GD, Woodall JM. Photomodulation study of partially strained InxGa1-xAs layers Semiconductor Science and Technology. 8: 1420-1425. DOI: 10.1088/0268-1242/8/7/036 |
0.389 |
|
| 1993 |
Pollak FH, Shen H. Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices Materials Science and Engineering R. 10. DOI: 10.1016/0927-796X(93)90004-M |
0.406 |
|
| 1993 |
Yin X, Guo X, Pollak FH, Pettit GD, McInturff DT, Woodall JM, Cirlin E. Contactless electromodulation for in situ characterization of semiconductor processing Applied Surface Science. 63: 163-166. DOI: 10.1016/0169-4332(93)90082-M |
0.364 |
|
| 1992 |
Warren AC, Woodall JM, Kirchner PD, Yin X, Pollak F, Melloch MR, Otsuka N, Mahalingam K. Role of excess As in low-temperature-grown GaAs. Physical Review. B, Condensed Matter. 46: 4617-4620. PMID 10004217 DOI: 10.1103/Physrevb.46.4617 |
0.35 |
|
| 1992 |
Qiang H, Huang YS, Pollak FH, Pettit GD, Woodall JM. Temperature dependence of the 11H photoreflectance lineshape in an (001) In0.21Ga0.79As/GaAs single quantum well Semiconductors. 1678: 177-188. DOI: 10.1117/12.60453 |
0.374 |
|
| 1992 |
Yin X, Guo X, Pollak FH, Pettit GD, Woodall JM, Cirlin E. Electromodulation of semiconductors and semiconductor microstructures utilizing a new contactless technique Semiconductors. 1678: 168-176. DOI: 10.1117/12.60452 |
0.407 |
|
| 1992 |
Shum K, Takiguchi Y, Mohaidat JM, Alfano RR, Qiang H, Pollak FH, Morkoc H. Electron energy relaxation dynamics in GaAs quantum wells grown on Si: cool-hole effect Semiconductors. 1677: 249-259. DOI: 10.1117/12.137689 |
0.378 |
|
| 1992 |
Yin Y, Qiang H, Pollak FH, Streit DC, Wojtowicz M. Electromodulation study of a pseudomorphic Ga0.78Al0.22As/In0.21Ga0.79As/GaAs modulation-doped quantum-well structure: two-dimensional electron gas effects Semiconductors. 1675: 498-509. DOI: 10.1117/12.137634 |
0.372 |
|
| 1992 |
Warren AC, Woodall JM, Kirchner PD, Yin X, Guo X, Pollak FH, Melloch MR. Electromodulation study of GaAs with excess arsenic Journal of Vacuum Science & Technology B. 10: 1904-1907. DOI: 10.1116/1.586220 |
0.377 |
|
| 1992 |
Yin X, Chen H, Pollak FH, Chan Y, Montano PA, Kirchner PD, Pettit GD, Woodall JM. Photoreflectance study of the surface Fermi level at (001) n‐ and p‐type GaAs surfaces Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 10: 131-136. DOI: 10.1116/1.578125 |
0.341 |
|
| 1992 |
Yan D, Pollak FH, Boccio VT, Lin CL, Kirchner PD, Woodall JM, Gee RC, Asbeck PM. Photoreflectance characterization of an InP/InGaAs heterojunction bipolar transistor structure Applied Physics Letters. 61: 2066-2068. DOI: 10.1063/1.108308 |
0.378 |
|
| 1992 |
Qiang H, Pollak FH, Sotomayor Torres CM, Leitch W, Kean AH, Stroscio MA, Iafrate GJ, Kim KW. Size dependence of the thermal broadening of the exciton linewidth in GaAs/Ga0.7Al0.3As single quantum wells Applied Physics Letters. 61: 1411-1413. DOI: 10.1063/1.107554 |
0.379 |
|
| 1992 |
Yin Y, Qiang H, Pollak FH, Streit DC, Wojtowicz M. Two-dimensional electron gas effects in the electromodulation spectra of a pseudomorphic Ga0.78Al0.22As/In0.21Ga 0.79As/GaAs modulation-doped quantum well structure Applied Physics Letters. 61: 1579-1581. DOI: 10.1063/1.107502 |
0.359 |
|
| 1992 |
Yin X, Guo X, Pollak FH, Pettit GD, Woodall JM, Chin TP, Tu CW. Nature of band bending at semiconductor surfaces by contactless electroreflectance Applied Physics Letters. 60: 1336-1338. DOI: 10.1063/1.107335 |
0.402 |
|
| 1992 |
Qiang H, Pollak FH, Shum K, Takiguchi Y, Alfano RR, Fang SF, Morkoç H. Piezospectroscopy of GaAs and GaAs/GaAlAs single quantum wells grown on (001) Si substrates Applied Physics Letters. 60: 2651-2653. DOI: 10.1063/1.106884 |
0.408 |
|
| 1992 |
Yin Y, Pollak FH, Auvray P, Dutartre D, Pantel R, Chroboczek JA. Photoreflectance study of strained (001) Si1−xGex/Si layers Thin Solid Films. 222: 85-88. DOI: 10.1016/0040-6090(92)90043-B |
0.356 |
|
| 1992 |
Qiang H, Pollak FH, Mailhiot C, Pettit GD, Woodall JM. Uniaxial stress study of the quantum transitions in a strained layer (001) In0.21Ga0.79As/GaAs single quantum well Surface Science. 267: 103-106. DOI: 10.1016/0039-6028(92)91099-W |
0.38 |
|
| 1992 |
Yin Y, Yan D, Pollak FH, Hybertsen MS, Vandenberg JM, Bean JC. Piezoreflectance of strained Si/Ge superlattices grown on Ge(001) Surface Science. 267: 99-102. DOI: 10.1016/0039-6028(92)91098-V |
0.372 |
|
| 1992 |
Qiang H, Pollak FH, Sacks RN. Piezospectroscopy of a GaAs/Ga0.73Al0.27As single quantum well structure: Piezoelectric effects Solid State Communications. 84: 51-55. DOI: 10.1016/0038-1098(92)90293-I |
0.352 |
|
| 1991 |
Hang Z, Yan D, Pollak FH, Pettit GD, Woodall JM. Temperature dependence of the direct band gap of InxGa1-xAs (x=0.06 and 0.15). Physical Review. B, Condensed Matter. 44: 10546-10550. PMID 9999079 DOI: 10.1103/Physrevb.44.10546 |
0.331 |
|
| 1991 |
Qiang H, Pollak FH, Mailhiot C, Pettit GD, Woodall JM. Externally generated piezoelectric effect in semiconductor micro- structures. Physical Review. B, Condensed Matter. 44: 9126-9128. PMID 9998890 DOI: 10.1103/Physrevb.44.9126 |
0.341 |
|
| 1991 |
Warren AC, Woodall JM, Burroughes JH, Kirchner PD, Heinrich HK, Arjavalingam G, Katzenellenbogen N, Grischkowsky D, Melloch MR, Otsuka N, Mahalingam K, Pollak FH, Yin X. The Electrical and Optical Properties of GaAs with as Precipitates (GaAs:As) Mrs Proceedings. 241: 15. DOI: 10.1557/Proc-241-15 |
0.316 |
|
| 1991 |
Ksendzov A, George T, Grunthaner FJ, Liu JK, Rich DH, Terhune RW, Wilson BA, Pollak FH, Huang Y-. Optical and structural characterization of InAs/GaAs quantum wells Mrs Proceedings. 221: 459. DOI: 10.1557/Proc-221-459 |
0.435 |
|
| 1991 |
Huang YS, Qiang H, Pollak FH, Pettit GD, Kirchner PD, Woodall JM, Stragier H, Sorensen LB. Temperature dependence of the photoreflectance of a strained layer (001) In0.21Ga0.79As/GaAs single quantum well Journal of Applied Physics. 70: 7537-7542. DOI: 10.1063/1.349706 |
0.409 |
|
| 1991 |
Huang YS, Qiang H, Pollak FH, Lee J, Elman B. Electroreflectance study of a symmetrically coupled GaAs/Ga 0.77Al0.23As double quantum well system Journal of Applied Physics. 70: 3808-3814. DOI: 10.1063/1.349184 |
0.361 |
|
| 1991 |
Yin X, Pollak FH. Novel contactless mode of electroreflectance Applied Physics Letters. 59: 2305-2307. DOI: 10.1063/1.106051 |
0.388 |
|
| 1991 |
Yin X, Chen H, Pollak FH, Chan Y, Montano PA, Kirchner PD, Pettit GD, Woodall JM. Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces Applied Physics Letters. 58: 260-262. DOI: 10.1063/1.104682 |
0.319 |
|
| 1991 |
Pollak FH. Modulation spectroscopy of semiconductor microstructures Superlattices and Microstructures. 10: 333-346. DOI: 10.1016/0749-6036(91)90338-R |
0.418 |
|
| 1990 |
George T, Weber ZL, Weber ER, Pollak FH. Polish-induced damage in 〈100〉 GaAs: A comparison of transmission electron microscopy and Raman spectroscopy Journal of Applied Physics. 67: 4363-4365. DOI: 10.1063/1.344928 |
0.32 |
|
| 1990 |
Shen H, Pollak FH, Tsu R. Optical properties of quantum steps Applied Physics Letters. 57: 13-15. DOI: 10.1063/1.103565 |
0.332 |
|
| 1990 |
de Lyon TJ, Kash JA, Tiwari S, Woodall JM, Yan D, Pollak FH. Low surface recombination velocity and contact resistance usingp+/pcarbon‐doped GaAs structures Applied Physics Letters. 56: 2442-2444. DOI: 10.1063/1.102903 |
0.38 |
|
| 1990 |
McDermott BT, Reid KG, El‐Masry NA, Bedair SM, Duncan WM, Yin X, Pollak FH. Atomic layer epitaxy of GaInP ordered alloy Applied Physics Letters. 56: 1172-1174. DOI: 10.1063/1.102553 |
0.32 |
|
| 1990 |
Yin X, Pollak FH, Pawlowicz L, O'Neill T, Hafizi M. Characterization of GaAs/Ga1-xAlxAs heterojunction bipolar transistor structures using photoreflectance Applied Physics Letters. 56: 1278-1280. DOI: 10.1063/1.102536 |
0.363 |
|
| 1990 |
Pollak FH. Chapter 2 Effects of Homogeneous Strain on the Electronic and Vibrational Levels in Semiconductors Semiconductors and Semimetals. 32: 17-53. DOI: 10.1016/S0080-8784(08)62642-3 |
0.347 |
|
| 1990 |
Ksendzov A, Shen H, Pollak FH, Bour DP. Photoreflectance study of InxGa1-xAs/GaAs single quantum wells Surface Science. 228: 326-329. DOI: 10.1016/0039-6028(90)90320-8 |
0.371 |
|
| 1990 |
Rockwell B, Chandrasekhar HR, Chandrasekhar M, Pollak FH, Shen H, Chang LL, Wang WI, Esaki L. Spectroscopic studies of strained-layer GaSbAlSb superlattices Surface Science. 228: 322-325. DOI: 10.1016/0039-6028(90)90319-4 |
0.586 |
|
| 1990 |
Atanasoska L, Atanasoski RT, Pollak FH, O'Grady WE. Single crystal RuO2/Ti and RuO2/TiO2 interface: LEED, Auger and XPS study Surface Science. 230: 95-112. DOI: 10.1016/0039-6028(90)90019-5 |
0.316 |
|
| 1990 |
Huang YS, Lin SS, Sheu JS, Shen WM, Pollak FH. Electroreflectance study of RuSe2 Solid State Communications. 76: 1093-1096. DOI: 10.1016/0038-1098(90)90971-D |
0.331 |
|
| 1990 |
Qiang H, Pollak FH, Hickman G. Piezo-photoreflectance of the direct gaps of GaAs and Ga0.78Al0.22As Solid State Communications. 76: 1087-1091. DOI: 10.1016/0038-1098(90)90970-M |
0.335 |
|
| 1990 |
Hang Z, Shen H, Pollak FH. Temperature dependence of the Eo and Eo + △o gaps of InP up to 600°C Solid State Communications. 73: 15-18. DOI: 10.1016/0038-1098(90)90005-V |
0.347 |
|
| 1990 |
Ksendzov A, Shen H, Pollak FH, Bour DP. Unambiguous identification of heavy-and light-hole states in the Photoreflectance of InxGa1-xAs/GaAs heterostructures Solid State Communications. 73: 11-14. DOI: 10.1016/0038-1098(90)90004-U |
0.385 |
|
| 1990 |
Ksendzov A, Pollak FH, Wilson JA, Cotton VA. Hg0.7Cd0.3Te/SiO2-Photox interface properties studied by photo- and bias-induced charging Journal of Crystal Growth. 86: 834-839. DOI: 10.1016/0022-0248(90)90812-Y |
0.32 |
|
| 1990 |
Ksendzov A, Pollak FH, Amirtharaj PM, Wilson JA. Excitation wavelength and pump chopping frequency dependence of photoreflectance in Hg1-xCdxTe Journal of Crystal Growth. 86: 586-592. DOI: 10.1016/0022-0248(90)90780-O |
0.343 |
|
| 1990 |
Pollak FH, Shen H. Photoreflectance characterization of semiconductors and semiconductor heterostructures Journal of Electronic Materials. 19: 399-406. DOI: 10.1007/Bf02657997 |
0.428 |
|
| 1990 |
Capuder K, Norris PE, Shen H, Hang Z, Pollak FH. In-situ OMVPE process sensing of GaAs and AlGaAs by photoreflectance Journal of Electronic Materials. 19: 295-298. DOI: 10.1007/Bf02651287 |
0.34 |
|
| 1989 |
Rockwell B, Chandrasekhar H, Chandrasekhar M, Pollak FH, Shen H, Chang L, Wang W, Esaki L. High Pressure Optical Studies of GaSb-AlSb Multiple Quantum Wells Mrs Proceedings. 160. DOI: 10.1557/Proc-160-751 |
0.599 |
|
| 1989 |
Yin X, Pollak FH, McDermott B, Reid K, Bedair S. Photoreflectance of a GaAs/In0.5 Ga0.5 P (ordered) Single Quantum Well Grown by Atomic Layer Epitaxy Mrs Proceedings. 160. DOI: 10.1557/Proc-160-679 |
0.389 |
|
| 1989 |
Shen H, Pollak FH, Woodall JM, Sacks RN. Electric field distributions in a molecular‐beam epitaxy Ga0.83Al0.17As/GaAs/GaAs structure using photoreflectance Journal of Vacuum Science & Technology B. 7: 804-806. DOI: 10.1116/1.584604 |
0.347 |
|
| 1989 |
Shen WM, Fantini MCA, Pollak FH, Tomkiewicz M, Leary HJ, Gambino JP. Liquid junctions for characterization of electronic materials. III. Modulation spectroscopies of reactive ion etching of Si Journal of Applied Physics. 66: 1765-1771. DOI: 10.1063/1.344367 |
0.32 |
|
| 1989 |
Ksendzov A, Pollak FH, Wilson JA, Cotton VA. Electroreflectance study of the temperature dependence of the E1 transition of Hg0.65Cd0.35Te Journal of Applied Physics. 66: 5528-5531. DOI: 10.1063/1.343655 |
0.336 |
|
| 1989 |
Shen H, Hang Z, Leng J, Pollak FH, Chang LL, Wang WI, Esaki L. Interband transitions from the photoreflectance of GaSb/AlSb multiple quantum wells Superlattices and Microstructures. 5: 591-594. DOI: 10.1016/0749-6036(89)90392-3 |
0.392 |
|
| 1989 |
Pollak FH, Shen H. Modulation spectroscopy in superlattices Superlattices and Microstructures. 6: 203-212. DOI: 10.1016/0749-6036(89)90123-7 |
0.407 |
|
| 1989 |
Fitch JT, Bjorkman CH, Lucovsky G, Pollak FH, Yin X. Local atomic structure at thermally grown Si/SiO2 interfaces Applied Surface Science. 39: 103-115. DOI: 10.1016/0169-4332(89)90423-6 |
0.317 |
|
| 1989 |
Ksendzov A, Pollak FH, Wu OK. Photoreflectance study of the temperature dependence of the E1 transition in (100) CdTe Solid State Communications. 70: 963-966. DOI: 10.1016/0038-1098(89)90637-6 |
0.338 |
|
| 1989 |
Pollak FH, Shen H. Modulation spectroscopy characterization of MOCVD semiconductors and semiconductors structures Journal of Crystal Growth. 98: 53-64. DOI: 10.1016/0022-0248(89)90185-1 |
0.378 |
|
| 1988 |
Shen H, Hang Z, Pan SH, Pollak FH, Woodall JM. Dependence of the photoreflectance of semi-insulating GaAs on temperature and pump chopping frequency Applied Physics Letters. 52: 2058-2060. DOI: 10.1063/1.99580 |
0.354 |
|
| 1988 |
Bour DP, Shealy JR, Ksendzov A, Pollak F. Optical investigation of organometallic vapor phase epitaxially grown AlxGa1-xP Journal of Applied Physics. 64: 6456-6459. DOI: 10.1063/1.342061 |
0.341 |
|
| 1988 |
Shen H, Pan SH, Hang Z, Leng J, Pollak FH, Woodall JM, Sacks RN. Photoreflectance of GaAs and Ga0.82Al0.18As at elevated temperatures up to 600 °C Applied Physics Letters. 53: 1080-1082. DOI: 10.1063/1.100027 |
0.339 |
|
| 1988 |
Pan S, Shen H, Hang Z, Pollak FH, Kuech T, Lee J, Schlesinger T, Shahid M. Photoreflectance, Raman scattering, photoluminescence and transmission electron microscopy of MOCVD multiple quantum wells Superlattices and Microstructures. 4: 609-617. DOI: 10.1016/0749-6036(88)90247-9 |
0.368 |
|
| 1988 |
Shen H, Pan SH, Hang Z, Pollak FH, Sacks RN. Miniband dispersion of the confined and unconfined states of coupled multiple quantum wells Solid State Communications. 65: 929-934. DOI: 10.1016/0038-1098(88)90734-X |
0.373 |
|
| 1987 |
Shen H, Shen XC, Pollak FH, Sacks RN. Photoreflectance and photoreflectance-excitation spectroscopy of a GaAs/Ga0.67Al0.33As multiple-quantum-well structure. Physical Review. B, Condensed Matter. 36: 3487-3490. PMID 9943274 DOI: 10.1103/Physrevb.36.3487 |
0.341 |
|
| 1987 |
Bhattacharya RN, Shen H, Parayanthal P, Pollak FH, Coutts T, Aharoni H. Photoreflectance characterization of the space charge region in semiconductors: indium tin oxide on InP as a model system Solar Cells. 21: 371-377. DOI: 10.1016/0379-6787(87)90135-9 |
0.316 |
|
| 1987 |
Shen H, Parayanthai P, Pollak FH, Sacks RN, Hickman G. Symmetry forbidden LO-phonon Raman scattering in heavily doped 〈1 0 0〉 n-GaAs Solid State Communications. 63: 357-359. DOI: 10.1016/0038-1098(87)90925-2 |
0.365 |
|
| 1986 |
Pearsall TP, Pollak FH, Bean JC, Hull R. Electroreflectance spectroscopy of Si-GexSi1-x quantum-well structures Physical Review B. 33: 6821-6830. DOI: 10.1103/PhysRevB.33.6821 |
0.301 |
|
| 1986 |
Ksendzov A, Pollak FH, Wilson JA, Cotton VA. Electroreflectance study of HgCdTe in the metal-insulator-semiconductor configuration at 77 K Applied Physics Letters. 49: 648-650. DOI: 10.1063/1.97068 |
0.322 |
|
| 1986 |
Shen H, Parayanthal P, Pollak FH, Tomkiewicz M, Drummond TJ, Schulman JN. Photoreflectance study of GaAs/AlAs superlattices: Fit to electromodulation theory Applied Physics Letters. 48: 653-655. DOI: 10.1063/1.97021 |
0.368 |
|
| 1986 |
Parayanthal P, Shen H, Pollak FH, Glembocki OJ, Shanabrook BV, Beard WT. Photoreflectance of GaAs/GaAlAs multiple quantum wells: Topographical variations in barrier height and well width Applied Physics Letters. 48: 1261-1263. DOI: 10.1063/1.96997 |
0.359 |
|
| 1986 |
Shen XC, Shen H, Parayanthal P, Pollak FH, Schulman JN, Smirl AL, McFarlane RA, D'Haenens I. Photoreflectance of GaAs doping superlattices Superlattices and Microstructures. 2: 513-517. DOI: 10.1016/0749-6036(86)90107-2 |
0.374 |
|
| 1986 |
Shen H, Parayanthal P, Pollak FH, Smirl AL, Schulman JN, McFarlane RA, D'Haenens I. Observation of symmetery forbidden transitions in the room temperature photoreflectance spectrum of a GaAs/GaAlAs multiple quantum well Solid State Communications. 59: 557-560. DOI: 10.1016/0038-1098(86)90058-X |
0.411 |
|
| 1985 |
Amirtharaj PM, Tiong KK, Parayanthal P, Pollak FH, Furdyna JK. Raman characterization of Hg1-xCdxTe and related materials Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 226-232. DOI: 10.1116/1.573207 |
0.356 |
|
| 1985 |
Gonzalez-Hernandez J, Azarbayejani GH, Tsu R, Pollak FH. Raman, transmission electron microscopy, and conductivity measurements in molecular beam deposited microcrystalline Si and Ge: A comparative study Applied Physics Letters. 47: 1350-1352. DOI: 10.1063/1.96277 |
0.308 |
|
| 1985 |
Shen H, Pollak FH, Sacks RN. Raman scattering determination of free-carrier concentration and surface space-charge layer in 〈100〉 n-GaAs Applied Physics Letters. 47: 891-893. DOI: 10.1063/1.95967 |
0.34 |
|
| 1985 |
Welch DF, Wicks GW, Eastman LF, Parayanthal P, Pollak FH. IMPROVEMENT OF OPTICAL CHARACTERISTICS OF Al//0//. //4//8In//0//. //5//2As GROWN BY MOLECULAR BEAM EPITAXY Applied Physics Letters. 46: 169-171. DOI: 10.1063/1.95672 |
0.358 |
|
| 1985 |
Tsu R, Gonzalez-Hernandez J, Pollak FH. Determination of the energy barrier for structural relaxation in amorphous Si and Ge by Raman scattering Solid State Communications. 54: 447-450. DOI: 10.1016/0038-1098(85)90947-0 |
0.336 |
|
| 1984 |
Chroboczek JA, Pollak FH, Staunton HF. Impurity conduction in silicon and effect of uniaxial compression on p-type Si Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 50: 113-156. DOI: 10.1080/13642818408238831 |
0.322 |
|
| 1984 |
Amirtharaj PM, Pollak FH. Raman scattering study of the properties and removal of excess Te on CdTe surfaces Applied Physics Letters. 45: 789-791. DOI: 10.1063/1.95367 |
0.315 |
|
| 1984 |
Shen H, Pollak FH. Raman study of polish-induced surface strain in 〈100〉 GaAs and InP Applied Physics Letters. 45: 692-694. DOI: 10.1063/1.95359 |
0.325 |
|
| 1984 |
Tiong KK, Amirtharaj PM, Pollak FH, Aspnes DE. Effects of As+ ion implantation on the Raman spectra of GaAs:]] Spatial correlation" interpretation Applied Physics Letters. 44: 122-124. DOI: 10.1063/1.94541 |
0.326 |
|
| 1984 |
Bond AH, Parayanthal P, Pollak FH, Woodall JM. Direct measurement of proton straggling in GaAlAs for nuclear profiling Journal of Applied Physics. 55: 3433-3436. DOI: 10.1063/1.333359 |
0.356 |
|
| 1984 |
Tiong KK, Amirtharaj PM, Parayanthal P, Pollak FH. Raman scattering from (110) Hg0.8Cd0.2Te Solid State Communications. 50: 891-894. DOI: 10.1016/0038-1098(84)90742-7 |
0.321 |
|
| 1984 |
Tsu R, Hernandez JG, Pollak FH. Determination of energy barrier for structural relaxation in a-Si and a-Ge by Raman scattering Journal of Non-Crystalline Solids. 66: 109-114. DOI: 10.1016/0022-3093(84)90307-7 |
0.339 |
|
| 1983 |
Amirtharaj PM, Tiong KK, Pollak FH. Raman scattering in Hg0.8 Cd0.2Te Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 1: 1744-1748. DOI: 10.1116/1.572207 |
0.367 |
|
| 1983 |
Parayanthal P, Ro CS, Pollak FH, Stanley CR, Wicks GW, Eastman LF. Electroreflectance investigation of (Ga1-xAl x)0.47In0.53As lattice matched to InP Applied Physics Letters. 43: 109-111. DOI: 10.1063/1.94146 |
0.338 |
|
| 1983 |
Glembocki OJ, Pollak FH. Intervalley electron-phonon and hole-phonon scattering matrix elements in germanium Physica B+C. 117: 546-548. DOI: 10.1016/0378-4363(83)90584-3 |
0.312 |
|
| 1982 |
Glembocki OJ, Pollak FH. Relative intensities of indirect transitions: Electron-phonon and hole-phonon interaction matrix elements in Si (TO) and GaP (LA,TA) Physical Review B. 25: 1193-1204. DOI: 10.1103/Physrevb.25.1193 |
0.334 |
|
| 1982 |
Glembocki OJ, Pollak FH. Piezospectroscopic determination of the ratio of the electron-phonon to hole-phonon scattering matrix elements for la and TA phonons in GaP Physical Review B. 25: 1179-1192. DOI: 10.1103/Physrevb.25.1179 |
0.367 |
|
| 1982 |
Amirtharaj PM, Pollak FH, Waterman JR, Boyd PR. Electrolyte electroreflectance study of laser annealing effects on the CdTe/Hg0.8Cd0.2Te (111) system Applied Physics Letters. 41: 860-862. DOI: 10.1063/1.93677 |
0.313 |
|
| 1982 |
Parayanthal P, Pollak FH, Woodall JM. Raman scattering characterization of Ga1-xAlxAs/GaAs heterojunctions: Epilayer and interface Applied Physics Letters. 41: 961-963. DOI: 10.1063/1.93356 |
0.365 |
|
| 1982 |
Jan GJ, Pollak FH, Tsu R. Optical properties of disordered silicon in the range 1-10 eV Solar Energy Materials. 8: 241-248. DOI: 10.1016/0165-1633(82)90066-1 |
0.349 |
|
| 1982 |
Amirtharaj PM, Pollak FH, Wold A. Electroreflectance and reflectance study of 2H-MoSe2 Solid State Communications. 41: 581-584. DOI: 10.1016/0038-1098(82)90945-0 |
0.356 |
|
| 1981 |
Silberstein RP, Lyden JK, Tomkiewicz M, Pollak FH. Optical investigation of the electrical properties of a polycrystalline–semiconductor–electrolyte interface using electroreflectance Journal of Vacuum Science and Technology. 19: 406-410. DOI: 10.1116/1.571028 |
0.324 |
|
| 1981 |
Mendez EE, Chang LL, Landgren G, Ludeke R, Esaki L, Pollak FH. Observation of superlattice effects on the electronic bands of multilayer heterostructures Physical Review Letters. 46: 1230-1234. DOI: 10.1103/Physrevlett.46.1230 |
0.386 |
|
| 1981 |
Silberstein RP, Pollak FH, Lyden JK, Tomkiewicz M. Optical determination of Fermi-level pinning using electroreflectance Physical Review B. 24: 7397-7400. DOI: 10.1103/Physrevb.24.7397 |
0.36 |
|
| 1981 |
Goel AK, Skorinko G, Pollak FH. Optical properties of single-crystal rutile RuO2 and IrO2 in the range 0.5 to 9.5 eV Physical Review B. 24: 7342-7350. DOI: 10.1103/Physrevb.24.7342 |
0.388 |
|
| 1981 |
Tsu R, Chao SS, Izu M, Ovshinsky SR, Jan GJ, Pollak FH. The Nature of Intermediate Range Order in Si:F:H:(P) Alloy Systems Le Journal De Physique Colloques. 42: 99-101. DOI: 10.1051/Jphyscol:1981457 |
0.332 |
|
| 1981 |
Amirtharaj PM, Pollak FH, Furdyna JK. Electroreflectance study of the dilure magnetic semiconductor alloy Hg1-xMnxTe Solid State Communications. 39: 35-39. DOI: 10.1016/0038-1098(81)91042-5 |
0.323 |
|
| 1981 |
Goel AK, Skorinko G, Pollak FH. Polarization dependent reflectivity and optical constants of single crystal rutile RuO2 in the range 0.5 to 9.5 eV Solid State Communications. 39: 245-248. DOI: 10.1016/0038-1098(81)90665-7 |
0.382 |
|
| 1980 |
Pollak FH, Tsu R, Mendez E. Electrolyte Electroreflectance Investigation Of Ion-Damaged Laser-Annealed Silicon Laser and Electron Beam Processing of Materials. 195-200. DOI: 10.1016/B978-0-12-746850-1.50030-X |
0.325 |
|
| 1980 |
Silberstein RP, Pollak FH. Optical and modulated optical investigation of the semiconductor-oxide-electrolyte interface in GaAs Surface Science. 101: 269-276. DOI: 10.1016/0039-6028(80)90620-2 |
0.361 |
|
| 1980 |
Silberstein RP, Pollak FH. Observation of exciton quenching in GaAs at room temperature using electrolyte electroreflectance Solid State Communications. 33: 1131-1133. DOI: 10.1016/0038-1098(80)91090-X |
0.363 |
|
| 1980 |
Tsu R, Izu M, Ovshinsky SR, Pollak FH. Electroreflectance and Raman scattering investigation of glow-discharge amorphous Si:F:H Solid State Communications. 36: 817-822. DOI: 10.1016/0038-1098(80)90019-8 |
0.3 |
|
| 1980 |
Pankove JI, Pollak FH, Schnabolk C. Optical absorption by GAP states in hydrogenated amorphous silicon Journal of Non-Crystalline Solids. 35: 459-462. DOI: 10.1016/0022-3093(80)90637-7 |
0.358 |
|
| 1979 |
Pollak FH, Okeke CE, Vanier PE, Raccah PM. Variations in the carrier concentration in elemental and compound semiconductors utilizing electrolyte electroreflectance: A topographical investigation Journal of Applied Physics. 50: 5375-5380. DOI: 10.1063/1.326638 |
0.308 |
|
| 1978 |
Lu SSM, Pollak FH, Raccah PM. Polarization-dependent reflectivity and optical constants of Ti2O3 in the range 0.7-10 eV Physical Review B. 17: 1970-1975. DOI: 10.1103/Physrevb.17.1970 |
0.328 |
|
| 1978 |
Pollak FH, Okeke CE, Vanier PE, Raccah PM. Variations in composition in binary and ternary semiconductors utilizing electrolyte electroreflectance: A topographical investigation Journal of Applied Physics. 49: 4216-4222. DOI: 10.1063/1.325334 |
0.315 |
|
| 1977 |
Chandrasekhar M, Pollak FH. Effects of uniaxial stress on the electroreflectance spectrum of Ge and GaAs Physical Review B. 15: 2127-2144. DOI: 10.1103/Physrevb.15.2127 |
0.531 |
|
| 1974 |
Anastassakis E, Pollak FH, Rubloff GW. Resonance Raman scattering under [111] uniaxial stress in the region of the E1 gap in InAs Physical Review B. 9: 551-553. DOI: 10.1103/Physrevb.9.551 |
0.473 |
|
| 1973 |
Rubloff GW, Anastassakis E, Pollak FH. Resonance Raman scattering in InAs near the E1 gap Solid State Communications. 13: 1755-1759. DOI: 10.1016/0038-1098(73)90723-0 |
0.475 |
|
| 1972 |
Pollak FH, Rubloff GW. Piezo-optical evidence for λ transitions at the 3.4-eV optical structure of silicon Physical Review Letters. 29: 789-792. DOI: 10.1103/Physrevlett.29.789 |
0.561 |
|
| 1971 |
Buchenauer CJ, Cardona M, Pollak FH. Raman scattering in gray tin Physical Review B. 3: 1243-1244. DOI: 10.1103/Physrevb.3.1243 |
0.312 |
|
| 1970 |
Pollak FH, Cardona M, Higginbotham CW, Herman F, Dyke JPv. Energy-Band Structure and Optical Spectrum of Grey Tin Physical Review B. 2: 352-363. DOI: 10.1103/Physrevb.2.352 |
0.328 |
|
| 1970 |
Laude LD, Cardona M, Pollak FH. Deformation potentials of the indirect and direct absorption edges of AlSb Physical Review B. 1: 1436-1442. DOI: 10.1103/Physrevb.1.1436 |
0.347 |
|
| 1969 |
Rowe JE, Pollak FH, Cardona M. Stress-induced exchange splitting of hyperbolic excitons in GaAs Physical Review Letters. 22: 933-936. DOI: 10.1103/Physrevlett.22.933 |
0.584 |
|
| 1966 |
Cardona M, Pollak FH, Shaklee KL. Electroreflectance in AlSb: Observation of the direct band edge Physical Review Letters. 16: 644-646. DOI: 10.1103/Physrevlett.16.644 |
0.31 |
|
| 1966 |
Pollak FH, Cardona M, Shaklee KL. Piezo Electroreflectance in GaAs Physical Review Letters. 16: 1187-1187. DOI: 10.1103/Physrevlett.16.1187.2 |
0.382 |
|
| 1966 |
Cardona M, Shaklee L, Pollak FH. Electroreflectance at a semiconductor-electrolyte interface: Infrared measurements Physics Letters. 23: 37-38. DOI: 10.1103/Physrevlett.15.883 |
0.307 |
|
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