| Year |
Citation |
Score |
| 1996 |
Acco S, Williamson DL, Stolk PA, Saris FW, van den Boogaard MJ, Sinke WC, van der Weg WF, Roorda S, Zalm PC. Hydrogen solubility and network stability in amorphous silicon. Physical Review. B, Condensed Matter. 53: 4415-4427. PMID 9983995 DOI: 10.1103/PhysRevB.53.4415 |
0.745 |
|
| 1996 |
Van Der Weg WF, Berntsen AJM, Saris FW, Polman A. Ion implantation into amorphous solids Materials Chemistry and Physics. 46: 140-146. DOI: 10.1016/S0254-0584(97)80007-7 |
0.638 |
|
| 1995 |
Williamson DL, Roorda S, Chicoine M, Tabti R, Stolk PA, Acco S, Saris FW. On the nanostructure of pure amorphous silicon Applied Physics Letters. 67: 226. DOI: 10.1063/1.114675 |
0.715 |
|
| 1992 |
Roorda S, Hakvoort RA, Van Veen A, Stolk PA, Saris FW. Structural and electrical defects in amorphous silicon probed by positrons and electrons Journal of Applied Physics. 72: 5145-5152. DOI: 10.1063/1.351993 |
0.691 |
|
| 1989 |
Polman A, Vredenberg AM, Urbanus WH, van Deenen PJ, Alberda H, Krop H, Attema I, De Haas E, Kersten H, Doorn S, Derks J, Ter Beek J, Roorda S, Schreutelkamp R, Bannenberg JG, ... Saris FW, et al. An MeV facility for materials research Nuclear Inst. and Methods in Physics Research, B. 37: 935-940. DOI: 10.1016/0168-583X(89)90330-3 |
0.649 |
|
| 1988 |
Polman A, Sinke W, Saris FW, Uttormark MJ, Thompson MO. Quench rate enhancement in pulsed laser melting of Si by processing under water Applied Physics Letters. 52: 535-537. DOI: 10.1063/1.99408 |
0.723 |
|
| 1988 |
Sinke W, Warabisako T, Miyao M, Tokuyama T, Roorda S, Saris FW. Transient structural relaxation of amorphous silicon Journal of Non-Crystalline Solids. 99: 308-323. DOI: 10.1016/0022-3093(88)90439-5 |
0.765 |
|
| 1988 |
Sinke WC, Roorda S, Saris FW. Variable strain energy in amorphous silicon Journal of Materials Research. 3: 1201-1207. |
0.698 |
|
| 1987 |
Ogale SB, Polman A, Quentin FOP, Roorda S, Saris FW. Pulsed laser oxidation and nitridation of metal surfaces immersed in liquid media Applied Physics Letters. 50: 138-140. DOI: 10.1063/1.98248 |
0.702 |
|
| 1987 |
Ogale SB, Patil PP, Roorda S, Saris FW. Nitridation of iron by pulsed excimer laser treatment under liquid ammonia: Mössbauer spectroscopic study Applied Physics Letters. 50: 1802-1804. DOI: 10.1063/1.97702 |
0.681 |
|
| 1987 |
Sinke W, Polman A, Saris FW. A comparison between excimer laser and thermal annealing for ion-implanted polycrystalline silicon solar cells Solar Cells. 20: 51-57. DOI: 10.1016/0379-6787(87)90020-2 |
0.754 |
|
| 1986 |
Sinke W, Saris FW, Barbour JC, Mayer JW. SOLID-PHASE EPITAXIAL REGROWTH OF FINE-GRAIN POLYCRYSTALLINE SILICON. Journal of Materials Research. 1: 155-161. DOI: 10.1557/JMR.1986.0155 |
0.703 |
|
| 1986 |
Bruines JJP, Van Hal RPM, Boots HMJ, Sinke W, Saris FW. Direct observation of resolidification from the surface upon pulsed-laser melting of amorphous silicon Applied Physics Letters. 48: 1252-1254. DOI: 10.1063/1.96995 |
0.752 |
|
| 1986 |
Miyao M, Polman A, Sinke W, Saris FW, Van Kemp R. Electron irradiation-activated low-temperature annealing of phosphorus-implanted silicon Applied Physics Letters. 48: 1132-1134. DOI: 10.1063/1.96447 |
0.715 |
|
| 1986 |
Polman A, Van Sark WGJHM, Sinke W, Saris FW. A new method for the evaluation of solar cell parameters Solar Cells. 17: 241-251. DOI: 10.1016/0379-6787(86)90015-3 |
0.667 |
|
| 1986 |
Sinke W, Polman A, Saris FW. COMPARISON BETWEEN EXCIMER LASER AND THERMAL ANNEALING FOR ION-IMPLANTED POLYCRYSTALLINE SILICON SOLAR CELLS. Solar Cells. 38: 51-57. |
0.754 |
|
| 1986 |
Miyao M, Polman A, van Kemp R, Sinke W, Westendorp JEM, van der Veen JF, Saris FW. ELECTRON AND ION BEAM-STIMULATED SOLID PHASE REGROWTH OF PHOSPHORUS-IMPLANTED SILICON. Conference On Solid State Devices and Materials. 557-560. |
0.773 |
|
| 1985 |
Sinke W, Frijlink GPA, Saris FW. Oxygen in titanium nitride diffusion barriers Applied Physics Letters. 47: 471-473. DOI: 10.1063/1.96151 |
0.677 |
|
| 1985 |
Sinke W, Saris FW. LOW-ENERGY, PULSED-LASER IRRADIATION OF AMORPHOUS SILICON: MELTING AND RESOLIDIFICATION AT TWO FRONTS. Materials Research Society Symposia Proceedings. 35: 175-180. |
0.742 |
|
| 1985 |
Sinke W, Polman A, Van Sark WGJHM, Saris FW. USE OF A PULSED LASER FOR SHALLOW-JUNCTION PROCESSING. Commission of the European Communities, (Report) Eur. 1011-1016. |
0.706 |
|
| 1984 |
Sinke W, Saris FW. Evidence for a self-propagating melt in amorphous silicon upon pulsed-laser irradiation Physical Review Letters. 53: 2121-2124. DOI: 10.1103/PhysRevLett.53.2121 |
0.728 |
|
| 1984 |
Sinke W, van Sark W, Doorn S, Saris FW, Donon J, Loubly P, David G. POLYSILICON SOLAR CELLS MADE BY ION IMPLANTATION AND PULSED LASER ANNEALING. Commission of the European Communities, (Report) Eur. 1095-1103. |
0.743 |
|
| 1983 |
De Jong T, Douma WAS, Van Der Veen JF, Saris FW, Haisma J. Silicon molecular beam epitaxy on gallium phosphide Applied Physics Letters. 42: 1037-1039. DOI: 10.1063/1.93834 |
0.648 |
|
| 1983 |
Tromp RM, Van Loenen EJ, Iwami M, Smeenk RG, Saris FW, Nava F, Ottaviani G. The thermal stability of very thin Pd2Si films on Si Surface Science. 128: 224-236. DOI: 10.1016/S0039-6028(83)80028-4 |
0.554 |
|
| 1983 |
Iwami H, Tromp RM, Van Loenen EJ, Saris FW. Enhancement of damage creation at metal-silicon interfaces during H+ and He+ irradiation Physica B+C. 116: 328-331. DOI: 10.1016/0378-4363(83)90269-3 |
0.536 |
|
| 1983 |
de Jong T, Saris FW, Kistemaker J. Silicon epitaxy and pulsed laser irradiation in ultra-high vacuum Vacuum. 33: 543-546. DOI: 10.1016/0042-207X(83)90048-9 |
0.723 |
|
| 1983 |
van Loenen EJ, Iwami M, Tromp RM, van der Veen JF, Saris FW. Evidence for island growth on deposition of silver onto Si(111) 7 × 7 at room temperature Thin Solid Films. 104: 9-14. DOI: 10.1016/0040-6090(83)90543-6 |
0.643 |
|
| 1983 |
Tromp RM, Smeenk RG, Saris FW, Chadi DJ. Ion beam crystallography of silicon surfaces II. Si(100)-(2 × 1) Surface Science. 133: 137-158. DOI: 10.1016/0039-6028(83)90488-0 |
0.301 |
|
| 1983 |
Tromp RM, van Loenen EJ, Iwami M, Smeenk RG, Saris FW, Nava F, Ottaviani G. Ion beam analysis of the reaction of Pd with Si(100) and Si(111) at room temperature Surface Science. 124: 1-25. DOI: 10.1016/0039-6028(83)90332-1 |
0.539 |
|
| 1982 |
Hoonhout D, Saris FW. Threshold energy density for pulsed-laser annealing of ion-implanted silicon Journal of Applied Physics. 53: 4379-4388. DOI: 10.1063/1.331219 |
0.314 |
|
| 1982 |
Tromp R, Van Loenen EJ, Iwami M, Smeenk R, Saris FW. ION BEAM CRYSTALLOGRAPHY OF METAL-SILICON INTERFACES: Pd-Si(111) Materials Research Society Symposia Proceedings. 10: 155-116. DOI: 10.1016/0040-6090(82)90100-6 |
0.579 |
|
| 1982 |
Tromp RM, van Loenen EJ, Iwami M, Saris FW. On the structure of the laser irradiated Si(111)-(1 × 1) surface Solid State Communications. 44: 971-974. DOI: 10.1016/0038-1098(82)90315-5 |
0.615 |
|
| 1982 |
Smeenk RG, Tromp RM, Kersten HH, Boerboom AJH, Saris FW. Angle resolved detection of charged particles with a novel type toroidal electrostatic analyser Nuclear Instruments and Methods. 195: 581-586. DOI: 10.1016/0029-554X(82)90022-2 |
0.455 |
|
| 1982 |
Westendorp JFM, Wang ZL, Saris FW. ION-SCATTERING STUDY OF OXYGEN INDIFFUSION DURING PULSED LASER ANNEALING/CLEANING OF SILICON Materials Research Society Symposia Proceedings. 4: 255-260. |
0.321 |
|
| 1982 |
Sinke W, Hoonhout D, Saris FW. INFLUENCE OF SURFACE TEXTURE AND THERMAL TREATMENT ON THE PERFORMANCE OF LASER-ANNEALED SILICON SOLAR CELLS Commission of the European Communities, (Report) Eur. 1029-1033. |
0.744 |
|
| 1982 |
Hoonhout D, Saris FW. DOPANT REDISTRIBUTION BY PULSED-LASER ANNEALING OF ION-IMPLANTED SILICON Radiation Effects. 66: 43-59. |
0.32 |
|
| 1981 |
Tromp RM, Smeenk RG, Saris FW. Ion beam crystallography at the Si(100) surface Physical Review Letters. 46: 939-942. DOI: 10.1103/Physrevlett.46.939 |
0.583 |
|
| 1981 |
Smeenk RG, Tromp RM, Saris FW. Ion beam crystallography of the Ni(110)-(2 × 1)O surface Surface Science. 107: 429-438. DOI: 10.1016/0039-6028(81)90537-9 |
0.544 |
|
| 1981 |
Smeenk RG, Tromp RM, Frenken JWM, Saris FW. The oxidation of Ni(100) studied by medium energy ion scattering Surface Science. 112: 261-271. DOI: 10.1016/0039-6028(81)90374-5 |
0.519 |
|
| 1981 |
Tromp RM, Smeenk RG, Saris FW. Ion beam crystallography of silicon surfaces. I. Si(100)-(1 × 1) 2 H Surface Science. 104: 13-25. DOI: 10.1016/0039-6028(81)90120-5 |
0.589 |
|
| 1981 |
Tromp RM, Smeenk RG, Saris FW. The Si (100) surface: Symmetric or asymmetric dimers? Solid State Communications. 39: 755-758. DOI: 10.1016/0038-1098(81)90451-8 |
0.563 |
|
| 1981 |
Michel J, Fages C, Muller JC, Siffert P, Hoonhout D, De Jong T, Saris FW. LASER-ANNEALED SILICON SOLAR CELLS: A COMPARISON BETWEEN ION-BEAM AND GLOW DISCHARGE IMPLANTATION Commission of the European Communities, (Report) Eur. 713-718. |
0.315 |
|
| 1980 |
Smeenk RG, Tromp RM, Van Der Veen JF, Saris FW. A quantitative ion-scattering study of the Ni(110) surface during the early stages of oxidation Surface Science. 95: 156-170. DOI: 10.1016/0039-6028(80)90133-8 |
0.73 |
|
| 1980 |
Van der Veen JF, Tromp RM, Smeenk RG, Saris FW. Calculation of channelling and blocking effects for ion beam surface crystallography Nuclear Instruments and Methods. 171: 143-148. DOI: 10.1016/0029-554X(80)90020-8 |
0.725 |
|
| 1980 |
Smeenk RG, Tromp RM, van der Veen JF, Saris FW. QUANTITATIVE ION SCATTERING STUDY OF THE Ni(110) SURFACE DURING THE EARLY STAGES OF OXIDATION Society of Petroleum Engineers of Aime, (Paper) Spe. 2: 1396-1399. |
0.662 |
|
| 1979 |
Tamminga Y, Eggermont GEJ, Hofker WK, Hoonhout D, Garrett R, Saris FW. Differences between ruby and Nd:YAG laser annealing of ion implanted silicon Physics Letters A. 69: 436-438. DOI: 10.1016/0375-9601(79)90400-6 |
0.313 |
|
| 1979 |
van Der Veen JF, Tromp RM, Smeenk RG, Saris FW. Ion-beam crystallography of clean and sulfur covered Ni(110) Surface Science. 82: 468-480. DOI: 10.1016/0039-6028(79)90204-8 |
0.733 |
|
| 1979 |
Van Der Veen JF, Smeenk RG, Tromp RM, Saris FW. Relaxation effects and thermal vibrations in a Pt(111) surface measured by medium energy ion scattering Surface Science. 79: 219-230. DOI: 10.1016/0039-6028(79)90038-4 |
0.744 |
|
| 1979 |
Van Der Veen JF, Smeenk RG, Tromp RM, Saris FW. The effect of oxygen coverage on surface relaxation of Ni(110) measured by medium energy ion scattering Surface Science. 79: 212-218. DOI: 10.1016/0039-6028(79)90037-2 |
0.742 |
|
| 1978 |
Turkenburg WC, Smeenk RG, Saris FW. Investigations of surface relaxation and surface composition of Ni(110) by medium energy ion scattering spectroscopy Surface Science. 74: 181-200. DOI: 10.1016/0039-6028(78)90279-0 |
0.706 |
|
| 1978 |
Van Der Veen JF, Sanders JB, Saris FW. Two-atom model for the calculation of surface blocking in medium and high energy ion scattering Surface Science. 77: 337-350. DOI: 10.1016/0039-6028(78)90010-9 |
0.67 |
|
| 1978 |
Hoonhout D, Kerkdijk CBW, Bhattacharya RS, Kersten HH, Turkenburg WC, Saris FW. Surface layer analysis by MEIS using a solid state detector Nuclear Instruments and Methods. 149: 355-360. DOI: 10.1016/0029-554X(78)90887-X |
0.667 |
|
| 1977 |
Saris FW, van der Veen JF. ANALYSIS OF SURFACE STRUCTURE AND COMPOSITION BY ION-SCATTERING SPECTROSCOPY . 3: 2503-2510. |
0.674 |
|
| 1977 |
Bhattacharya RS, Kerkdijk CB, Van Der Veen JF, Saris FW. Photon emission studies of the synthesis of molecules by ion implantation Radiation Effects. 33: 57-58. |
0.642 |
|
| 1977 |
Bhattacharya RS, Van Der Veen JF, Kerkdijk CBW, Saris FW. Bombardment induced light emission from silicon, silicon nitride and silicon carbide surfaces Radiation Effects. 32: 25-31. |
0.681 |
|
| 1976 |
Turkenburg WC, Soszka W, Saris FW, Kersten HH, Colenbrander BG. Surface structure analysis by means of Rutherford scattering: Methods to study surface relaxation Nuclear Instruments and Methods. 132: 587-602. DOI: 10.1016/0029-554X(76)90798-9 |
0.684 |
|
| 1976 |
Turkenburg WC, Kersten HH, Colenbrander BG, De Jongh AP, Saris FW. Experimental parameters for quantitative surface analysis by medium energy ion scattering Nuclear Instruments and Methods. 138: 271-286. DOI: 10.1016/0029-554X(76)90035-5 |
0.694 |
|
| 1975 |
Turkenburg WC, Colenbrander BG, Kersten HH, Saris FW. Inelastic collisions of argon and chlorine ions in carbon Surface Science. 47: 272-281. DOI: 10.1016/0039-6028(75)90294-0 |
0.67 |
|
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