Geonwook Yoo, Ph.D. - Publications

2011 University of Michigan, Ann Arbor, Ann Arbor, MI 
Electronics and Electrical Engineering

22 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2017 Park H, Han GC, Lee SW, Lee H, Jeong SH, Naqi M, AlMutairi A, Kim YJ, Lee J, Kim WJ, Kim S, Yoon Y, Yoo G. Label-free and recalibrated multilayer MoS2 biosensor for point-of-care diagnostics. Acs Applied Materials & Interfaces. PMID 29171259 DOI: 10.1021/acsami.7b14479  0.48
2017 Yoo G, Choi SL, Park SJ, Lee KT, Lee S, Oh MS, Heo J, Park HJ. Flexible and Wavelength-Selective MoS2 Phototransistors with Monolithically Integrated Transmission Color Filters. Scientific Reports. 7: 40945. PMID 28098252 DOI: 10.1038/srep40945  0.48
2016 Jeon J, Lee J, Yoo G, Park JH, Yeom GY, Jang YH, Lee S. Size-tunable synthesis of monolayer MoS2 nanoparticles and their applications in non-volatile memory devices. Nanoscale. 8: 16995-17003. PMID 27714115 DOI: 10.1039/c6nr04456e  0.32
2016 Kang DH, Pae SR, Shim J, Yoo G, Jeon J, Leem JW, Yu JS, Lee S, Shin B, Park JH. An Ultrahigh-Performance Photodetector based on a Perovskite-Transition-Metal-Dichalcogenide Hybrid Structure. Advanced Materials (Deerfield Beach, Fla.). PMID 27352229 DOI: 10.1002/adma.201600992  0.32
2016 Jo SH, Kang DH, Shim J, Jeon J, Jeon MH, Yoo G, Kim J, Lee J, Yeom GY, Lee S, Yu HY, Choi C, Park JH. A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping Technique. Advanced Materials (Deerfield Beach, Fla.). PMID 27106134 DOI: 10.1002/adma.201600032  0.32
2016 Yoo G, Park Y, Sang P, Baac HW, Heo J. High-frequency optoacoustic transmitter based on nanostructured germanium via metal-assisted chemical etching Optical Materials Express. 6: 2567-2572. DOI: 10.1364/OME.6.002567  0.48
2016 Lim W, Kum H, Choi YJ, Sim SH, Yeon JH, Kim JS, Seong HK, Cha NG, Kim YI, Park YS, Yoo G, Pearton SJ. SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4959027  0.48
2016 Yoo G, Hong S. Emotion Evaluation Analysis and System Design of Biosignal 2016 International Conference On Platform Technology and Service, Platcon 2016 - Proceedings. DOI: 10.1109/PlatCon.2016.7456797  0.48
2016 Kim GS, Yoo G, Seo Y, Kim SH, Cho K, Cho BJ, Shin C, Park JH, Yu HY. Effect of Hydrogen Annealing on Contact Resistance Reduction of Metal-Interlayer-n-Germanium Source/Drain Structure Ieee Electron Device Letters. 37: 709-712. DOI: 10.1109/LED.2016.2558582  0.32
2016 Shim J, Yoo G, Kang DH, Jung WS, Byun YC, Kim H, Kang WT, Yu WJ, Yu HY, Park Y, Park JH. Theoretical and Experimental Investigation of Graphene/High-κ/p-Si Junctions Ieee Electron Device Letters. 37: 4-7. DOI: 10.1109/LED.2015.2497714  0.32
2016 Yoo G, Choi SL, Lee S, Yoo B, Kim S, Oh MS. Enhancement-mode operation of multilayer MoS2 transistors with a fluoropolymer gate dielectric layer Applied Physics Letters. 108. DOI: 10.1063/1.4955024  0.48
2016 Hong YK, Yoo G, Kwon J, Hong S, Song WG, Liu N, Omkaram I, Yoo B, Ju S, Kim S, Oh MS. High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics Aip Advances. 6. DOI: 10.1063/1.4953062  0.48
2016 Oh IK, Yoo G, Yoon CM, Kim TH, Yeom GY, Kim K, Lee Z, Jung H, Lee CW, Kim H, Lee HBR. Very high frequency plasma reactant for atomic layer deposition Applied Surface Science. 387: 109-117. DOI: 10.1016/j.apsusc.2016.06.048  0.32
2016 Yoo G, Choi SL, Yoo B, Oh MS. Solution-processed high-k oxide dielectric via deep ultraviolet and rapid thermal annealing for high-performance MoS2 FETs Physica Status Solidi (a) Applications and Materials Science. DOI: 10.1002/pssa.201600619  0.48
2016 Lee J, Yoo G, Seo W, Ock Y. Effects of technology innovation activity investments for small and medium manufacturing enterprises to business performance: Focusing on the southeast area in South Korea International Journal of Applied Business and Economic Research. 14: 2865-2875.  0.32
2015 Park HY, Jung WS, Kang DH, Jeon J, Yoo G, Park Y, Lee J, Jang YH, Lee J, Park S, Yu HY, Shin B, Lee S, Park JH. Extremely Low Contact Resistance on Graphene through n-Type Doping and Edge Contact Design. Advanced Materials (Deerfield Beach, Fla.). PMID 26619053 DOI: 10.1002/adma.201503715  0.32
2015 Yoo G, Rha EY, Jeong JY, Lee J, Sim SB, Jo KH. Emerging Fixation Technique to Prevent Pectus Bar Displacement: Needlescope-Assisted 3-Point Fixation. The Thoracic and Cardiovascular Surgeon. PMID 26277080 DOI: 10.1055/s-0035-1556818  0.32
2015 Lee EJ, Yoo GY, Jeong Y, Kim KU, Park JH, Oh NH. Comparison of UV-VIS and FDOM sensors for in situ monitoring of stream DOC concentrations Biogeosciences. 12: 3109-3118. DOI: 10.5194/bg-12-3109-2015  0.32
2015 Jeon J, Jang SK, Jeon SM, Yoo G, Park JH, Lee S. Controlling Grain Size and Continuous Layer Growth in Two-Dimensional MoS2 Films for Nanoelectronic Device Application Ieee Transactions On Nanotechnology. 14: 238-242. DOI: 10.1109/TNANO.2014.2381667  0.32
2015 Yoo G, Lee S, Yoo B, Han C, Kim S, Oh MS. Electrical Contact Analysis of Multilayer MoS2 Transistor with Molybdenum Source/Drain Electrodes Ieee Electron Device Letters. 36: 1215-1218. DOI: 10.1109/LED.2015.2478899  0.48
2015 Yoo G, Yoon H, Heo J, Thakur UK, Park HJ, Baac HW. All-Optical Ultrasound Transducer Using CNT-PDMS and Etalon Thin-Film Structure Ieee Photonics Journal. 7. DOI: 10.1109/JPHOT.2015.2496862  0.48
2015 Kwon J, Hong S, Hong YK, Lee S, Yoo G, Yoon Y, Kim S. Photosensitivity enhancement in hydrogenated amorphous silicon thin-film phototransistors with gate underlap Applied Physics Letters. 107. DOI: 10.1063/1.4935979  0.48
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