Geng Han, Ph.D. - Publications
Affiliations: | 2003 | University of Wisconsin, Madison, Madison, WI |
Area:
Electronics and Electrical Engineering, Materials Science EngineeringYear | Citation | Score | |||
---|---|---|---|---|---|
2003 | Han G, Khan M, Cerrina F. Stochastic modeling of high energy lithographies Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 3166. DOI: 10.1116/1.1627798 | 0.59 | |||
2002 | Han G, Khan M, Fang Y, Cerrina F. Comprehensive model of electron energy deposition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2666-2671. DOI: 10.1116/1.1526633 | 0.5 | |||
2001 | Shin J, Han G, Ma Y, Moloni K, Cerrina F. Resist line edge roughness and aerial image contrast Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 2890-2895. DOI: 10.1116/1.1418413 | 0.373 | |||
2001 | Khan M, Han G, Tsvid G, Kitayama T, Maldonado J, Cerrina F. Can proximity x-ray lithography print 35 nm features? Yes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 2423-2427. DOI: 10.1116/1.1418407 | 0.62 | |||
2000 | Han G, Cerrina F. Energy transfer between electrons and photoresist: Its relation to resolution Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 3297-3302. DOI: 10.1116/1.1318188 | 0.543 | |||
1999 | Khan M, Han G, Bollepalli SB, Cerrina F, Maldonado J. Extension of x-ray lithography to 50 nm with a harder spectrum Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 3426. DOI: 10.1116/1.591024 | 0.503 | |||
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