Marcos J. Barela, Ph.D. - Publications
Affiliations: | 2003 | University of New Mexico, Albuquerque, NM, United States |
Area:
Chemical Engineering, Fluid and Plasma PhysicsYear | Citation | Score | |||
---|---|---|---|---|---|
2005 | Barela MJ, Anderson HM, Oehrlein GS. Role of C 2 F 4, CF 2, and ions in C 4 F 8 Ar plasma discharges under active oxide etch conditions in an inductively coupled GEC cell reactor Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 408-416. DOI: 10.1116/1.1874173 | 0.392 | |||
2003 | Li X, Ling L, Hua X, Fukasawa M, Oehrlein GS, Barela M, Anderson HM. Effects of Ar and O2 additives on SiO2 etching in C4F8-based plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 284-293. DOI: 10.1116/1.1531140 | 0.399 | |||
2002 | Li X, Hua X, Ling L, Oehrlein GS, Barela M, Anderson HM. Fluorocarbon-based plasma etching of Sio2: Comparison of C4F6/Ar and C4F8/Ar discharges Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 20: 2052-2061. DOI: 10.1116/1.1517256 | 0.448 | |||
2001 | Perry WL, Waters K, Barela M, Anderson HM. Oxide etch behavior in a high-density, low-pressure, inductively coupled C2F6 plasma: Etch rates, selectivity to photoresist, plasma parameters, and CFx radical densities Journal of Vacuum Science and Technology. 19: 2272-2281. DOI: 10.1116/1.1382874 | 0.444 | |||
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