Paul C. McIntyre - Publications

Affiliations: 
Stanford University, Palo Alto, CA 
Area:
Materials Science Engineering, Condensed Matter Physics

43 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Wang Y, Meng AC, McIntyre PC, Cai W. Phase-field investigation of the stages in radial growth of core-shell Ge/GeSn nanowires. Nanoscale. PMID 31709446 DOI: 10.1039/c9nr07587a  0.8
2019 Kavrik MS, Ercius P, Cheung J, Tang K, Wang Q, Fruhberger B, Kim MJ, Taur Y, McIntyre PC, Kummel AC. Engineering high-k/SiGe interface with ALD oxide for selective GeOx reduction. Acs Applied Materials & Interfaces. PMID 30938163 DOI: 10.1021/acsami.8b22362  0.8
2018 Park J, Kang JH, Liu X, Maddox SJ, Tang K, McIntyre PC, Bank SR, Brongersma ML. Dynamic thermal emission control with InAs-based plasmonic metasurfaces. Science Advances. 4: eaat3163. PMID 30539139 DOI: 10.1126/sciadv.aat3163  0.8
2018 Kavrik MS, Thomson E, Chagarov E, Tang K, Ueda ST, Hou V, Aoki T, Kim MJ, Fruhberger B, Taur Y, McIntyre PC, Kummel AC. Ultra-Low defect density at sub-0.5 nm HfO2/SiGe interfaces via selective oxygen scavenging. Acs Applied Materials & Interfaces. PMID 30073827 DOI: 10.1021/acsami.8b06547  0.8
2018 Zhang L, Janotti A, Meng AC, Tang K, Van de Walle CG, McIntyre PC. Interfacial Cation Defect Charge Dipoles in Stacked TiO2-Al2O3 Gate Dielectrics. Acs Applied Materials & Interfaces. PMID 29369616 DOI: 10.1021/acsami.7b19619  0.8
2018 Tan W, Bowring AR, Meng AC, McGehee MD, McIntyre PC. Thermal Stability of Mixed Cation Metal Halide Perovskites in Air. Acs Applied Materials & Interfaces. PMID 29328620 DOI: 10.1021/acsami.7b15263  0.8
2017 Xue M, Islam R, Meng AC, Lyu Z, Lu CY, Tae C, Braun MR, Zang K, McIntyre PC, Kamins TI, Saraswat KC, Harris JS. Contact Selectivity Engineering in 2 μm Thick Ultrathin c-Si Solar Cell using Transition Metal Oxides Achieving Efficiency of 10.8. Acs Applied Materials & Interfaces. PMID 29124928 DOI: 10.1021/acsami.7b12886  0.8
2017 Jiang L, Shi Y, Hui F, Tang K, Wu Q, Pan C, Jing X, Uppal HJ, Palumbo FRM, Lu G, Wu T, Wang H, Villena MA, Xie X, McIntyre PC, et al. Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride. Acs Applied Materials & Interfaces. PMID 29039199 DOI: 10.1021/acsami.7b10948  0.8
2017 Choi S, An Y, Lee C, Song J, Nguyen MC, Byun YC, Choi R, McIntyre PC, Kim H. Effects of H2 High-pressure Annealing on HfO2/Al2O3/In0.53Ga0.47As Capacitors: Chemical Composition and Electrical Characteristics. Scientific Reports. 7: 9769. PMID 28852035 DOI: 10.1038/s41598-017-09888-6  0.52
2017 Meng AC, Tang K, Braun M, Zhang L, McIntyre PC. Electrochemical impedance spectroscopy for quantitative interface state characterization of planar and nanostructured semiconductor-dielectric interfaces. Nanotechnology. PMID 28776501 DOI: 10.1088/1361-6528/aa842b  0.8
2017 Tang K, Meng AC, Hui F, Shi Y, Petach T, Hitzman C, Koh AL, Goldhaber-Gordon D, Lanza M, McIntyre PC. Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts. Nano Letters. PMID 28604007 DOI: 10.1021/acs.nanolett.7b01460  0.8
2017 Edmonds M, Sardashti K, Wolf S, Chagarov E, Clemons M, Kent T, Park JH, Tang K, McIntyre PC, Yoshida N, Dong L, Holmes R, Alvarez D, Kummel AC. Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110). The Journal of Chemical Physics. 146: 052820. PMID 28178835 DOI: 10.1063/1.4975081  0.8
2017 Tang K, Palumbo FR, Zhang L, Droopad R, McIntyre PC. Interface defect hydrogen depassivation and capacitance-voltage hysteresis of Al2O3/InGaAs gate stacks. Acs Applied Materials & Interfaces. PMID 28152310 DOI: 10.1021/acsami.6b16232  0.8
2016 Meng AC, Fenrich CS, Braun MR, McVittie JP, Marshall AF, Harris JS, McIntyre PC. Core/Shell Germanium/Germanium-Tin Nanowires Exhibiting Room Temperature Direct- and Indirect-Gap Photoluminescence. Nano Letters. PMID 27802056 DOI: 10.1021/acs.nanolett.6b03316  0.8
2016 Tang K, Meng AC, Droopad R, McIntyre PC. Temperature dependent border trap response produced by a defective interfacial oxide layer in Al2O3/InGaAs gate stacks. Acs Applied Materials & Interfaces. PMID 27758108 DOI: 10.1021/acsami.6b10402  0.8
2016 Ji Y, Hui F, Shi Y, Iglesias V, Lewis D, Niu J, Long S, Liu M, Hofer A, Frammelsberger W, Benstetter G, Scheuermann A, McIntyre PC, Lanza M. Characterization of the photocurrents generated by the laser of atomic force microscopes. The Review of Scientific Instruments. 87: 083703. PMID 27587127 DOI: 10.1063/1.4960597  0.52
2016 Hendricks OL, Scheuermann AG, Schmidt M, Hurley PK, McIntyre PC, Chidsey CE. Isolating the photovoltaic junction: atomic layer deposited TiO2-RuO2 alloy Schottky contacts for silicon photoanodes. Acs Applied Materials & Interfaces. PMID 27548719 DOI: 10.1021/acsami.6b08558  0.44
2016 Zhang L, Guo Y, Hassan VV, Tang K, Foad MA, Woicik JC, Pianetta PA, Robertson J, McIntyre PC. Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates. Acs Applied Materials & Interfaces. PMID 27345195 DOI: 10.1021/acsami.6b03331  0.52
2016 Winter R, Shekhter P, Tang K, Floreano L, Verdini A, McIntyre PC, Eizenberg M. Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface. Acs Applied Materials & Interfaces. PMID 27282201 DOI: 10.1021/acsami.6b02957  0.52
2016 Scheuermann AG, Lawrence JP, Meng AC, Tang K, Hendricks OL, Chidsey CE, McIntyre PC. Titanium oxide crystallization and interface defect passivation for high performance insulator-protected Schottky junction MIS photoanodes. Acs Applied Materials & Interfaces. PMID 27196628 DOI: 10.1021/acsami.6b03688  0.52
2016 Satterthwaite PF, Scheuermann AG, Hurley PK, Chidsey CE, McIntyre PC. Engineering Interfacial Silicon Dioxide for Improved MIS Silicon Photoanode Water Splitting Performance. Acs Applied Materials & Interfaces. PMID 27096845 DOI: 10.1021/acsami.6b03029  0.44
2016 Li Y, Wang Y, Ryu S, Marshall AF, Cai W, McIntyre PC. SPONTANEOUS, DEFECT-FREE KINKING VIA CAPILLARY INSTABILITY DURING VAPOR-LIQUID-SOLID NANOWIRE GROWTH. Nano Letters. PMID 26837774 DOI: 10.1021/acs.nanolett.5b04633  0.52
2016 Potts H, Friedl M, Amaduzzi F, Tang K, Tütüncüoglu G, Matteini F, Alarcon Lladó E, McIntyre PC, Fontcuberta i Morral A. From Twinning to Pure Zincblende Catalyst-Free InAs(Sb) Nanowires. Nano Letters. 16: 637-43. PMID 26686394 DOI: 10.1021/acs.nanolett.5b04367  0.8
2015 Scheuermann AG, Lawrence JP, Kemp KW, Ito T, Walsh A, Chidsey CE, Hurley PK, McIntyre PC. Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes. Nature Materials. PMID 26480231 DOI: 10.1038/nmat4451  0.44
2015 Zhang L, Li H, Guo Y, Tang K, Woicik J, Robertson J, McIntyre PC. Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures. Acs Applied Materials & Interfaces. PMID 26334784 DOI: 10.1021/acsami.5b06087  0.52
2015 Zhernokletov DM, Negara MA, Long RD, Aloni S, Nordlund D, McIntyre PC. Interface Trap Density Reduction for Al2O3/GaN (0001) Interfaces by Oxidizing Surface Preparation prior to Atomic Layer Deposition. Acs Applied Materials & Interfaces. 7: 12774-80. PMID 25988586 DOI: 10.1021/acsami.5b01600  0.52
2015 Byun YC, Choi S, An Y, McIntyre PC, Kim H. Correction to tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition. Acs Applied Materials & Interfaces. 7: 7445. PMID 25823007 DOI: 10.1021/acsami.5b02372  0.52
2014 Byun YC, Choi S, An Y, McIntyre PC, Kim H. Tailoring the interface quality between HfO2 and GaAs via in situ ZnO passivation using atomic layer deposition. Acs Applied Materials & Interfaces. 6: 10482-8. PMID 24911531 DOI: 10.1021/am502048d  0.52
2014 Li Y, Clady R, Park J, Thombare SV, Schmidt TW, Brongersma ML, McIntyre PC. Ultrafast electron and phonon response of oriented and diameter-controlled germanium nanowire arrays. Nano Letters. 14: 3427-31. PMID 24797453 DOI: 10.1021/nl500953p  0.48
2012 Hu S, Kawamura Y, Huang KC, Li Y, Marshall AF, Itoh KM, Brongersma ML, McIntyre PC. Thermal stability and surface passivation of Ge nanowires coated by epitaxial SiGe shells. Nano Letters. 12: 1385-91. PMID 22364183 DOI: 10.1021/nl204053w  0.52
2011 Chen YW, Prange JD, Dühnen S, Park Y, Gunji M, Chidsey CE, McIntyre PC. Atomic layer-deposited tunnel oxide stabilizes silicon photoanodes for water oxidation. Nature Materials. 10: 539-44. PMID 21685904 DOI: 10.1038/nmat3047  0.44
2010 Marshall AF, Goldthorpe IA, Adhikari H, Koto M, Wang YC, Fu L, Olsson E, McIntyre PC. Hexagonal close-packed structure of au nanocatalysts solidified after ge nanowire vapor-liquid-solid growth. Nano Letters. 10: 3302-6. PMID 20687570 DOI: 10.1021/nl100913d  0.68
2010 Koto M, Marshall AF, Goldthorpe IA, McIntyre PC. Gold-catalyzed vapor-liquid-solid germanium-nanowire nucleation on porous silicon. Small (Weinheim An Der Bergstrasse, Germany). 6: 1032-7. PMID 20411571 DOI: 10.1002/smll.200901764  0.68
2009 Hu S, Leu PW, Marshall AF, McIntyre PC. Single-crystal germanium layers grown on silicon by nanowire seeding. Nature Nanotechnology. 4: 649-53. PMID 19809455 DOI: 10.1038/nnano.2009.233  0.68
2009 Goldthorpe IA, Marshall AF, McIntyre PC. Inhibiting strain-induced surface roughening: dislocation-free Ge/Si and Ge/SiGe core-shell nanowires. Nano Letters. 9: 3715-9. PMID 19795838 DOI: 10.1021/nl9018148  0.68
2009 Ratchford JB, Goldthorpe IA, Sun Y, McIntyre PC, Pianetta PA, Chidsey CE. Gold removal from germanium nanowires. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 9473-9. PMID 19419180 DOI: 10.1021/la900725b  0.52
2008 Leu PW, Adhikari H, Koto M, Kim KH, Rouffignac Pd, Marshall AF, Gordon RG, Chidsey CE, McIntyre PC. Oxide-encapsulated vertical germanium nanowire structures and their DC transport properties. Nanotechnology. 19: 485705. PMID 21836312 DOI: 10.1088/0957-4484/19/48/485705  0.68
2008 Goldthorpe IA, Marshall AF, McIntyre PC. Synthesis and strain relaxation of Ge-core/Si-shell nanowire arrays. Nano Letters. 8: 4081-6. PMID 18954126 DOI: 10.1021/nl802408y  0.68
2007 Adhikari H, Marshall AF, Goldthorpe IA, Chidsey CE, McIntyre PC. Metastability of Au-Ge liquid nanocatalysts: Ge vapor-liquid-solid nanowire growth far below the bulk eutectic temperature. Acs Nano. 1: 415-22. PMID 19206662 DOI: 10.1021/nn7001486  0.68
2007 Woodruff JH, Ratchford JB, Goldthorpe IA, McIntyre PC, Chidsey CED. Vertically oriented germanium nanowires grown from gold colloids on silicon substrates and subsequent gold removal Nano Letters. 7: 1637-1642. PMID 17530912 DOI: 10.1021/nl070595x  0.68
2007 Hong J, Porter DW, Sreenivasan R, McIntyre PC, Bent SF. ALD resist formed by vapor-deposited self-assembled monolayers. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 1160-5. PMID 17241027 DOI: 10.1021/la0606401  0.52
2006 Okyay AK, Nayfeh AM, Saraswat KC, Yonehara T, Marshall A, McIntyre PC. High-efficiency metal-semiconductor-metal photodetectors on heteroepitaxially grown Ge on Si. Optics Letters. 31: 2565-7. PMID 16902620 DOI: 10.1364/OL.31.002565  0.52
2006 Adhikari H, Marshall AF, Chidsey CED, McIntyre PC. Germanium nanowire epitaxy: Shape and orientation control Nano Letters. 6: 318-323. PMID 16464057 DOI: 10.1021/nl052231f  0.68
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