| Year |
Citation |
Score |
| 2014 |
He G, Srivastava N, Feenstra RM. Formation of a Buffer Layer for Graphene on C-Face SiC{0001} Journal of Electronic Materials. 43: 819-827. DOI: 10.1007/S11664-013-2901-8 |
0.753 |
|
| 2013 |
Srivastava N, Gao Q, Widom M, Feenstra RM, Nie S, McCarty KF, Vlassiouk IV. Low-energy electron reflectivity of graphene on copper and other substrates Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.245414 |
0.733 |
|
| 2013 |
Feenstra RM, Srivastava N, Gao Q, Widom M, Diaconescu B, Ohta T, Kellogg GL, Robinson JT, Vlassiouk IV. Low-energy electron reflectivity from graphene Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.041406 |
0.745 |
|
| 2013 |
Vlassiouk I, Smirnov S, Regmi M, Surwade SP, Srivastava N, Feenstra R, Eres G, Parish C, Lavrik N, Datskos P, Dai S, Fulvio P. Graphene nucleation density on copper: Fundamental role of background pressure Journal of Physical Chemistry C. 117: 18919-18926. DOI: 10.1021/Jp4047648 |
0.684 |
|
| 2012 |
Daniels KM, Daas BK, Srivastava N, Williams C, Feenstra RM, Sudarshan TS, Chandrashekhar MVS. Evidence of electrochemical graphene functionalization by Raman spectroscopy Materials Science Forum. 717: 661-664. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.661 |
0.691 |
|
| 2012 |
Srivastava N, He G, Feenstra RM. Graphene on Carbon-face SiC{0001} Surfaces Formed in a Disilane Environment Materials Science Forum. 609: 609-612. DOI: 10.4028/Www.Scientific.Net/Msf.717-720.609 |
0.771 |
|
| 2012 |
He G, Srivastava N, Feenstra RM. Formation of graphene on SiC(0001¯) surfaces in disilane and neon environments Journal of Vacuum Science & Technology B. 30. DOI: 10.1116/1.4718365 |
0.731 |
|
| 2012 |
Srivastava N, He G, Luxmi, Feenstra RM. Interface structure of graphene on SiC(0001̄) Physical Review B. 85: 41404. DOI: 10.1103/Physrevb.85.041404 |
0.718 |
|
| 2012 |
Srivastava N, He G, Luxmi, Mende PC, Feenstra RM, Sun Y. Graphene Formed on SiC Under Various Environments: Comparison of Si-Face and C-Face Journal of Physics D. 45: 154001. DOI: 10.1088/0022-3727/45/15/154001 |
0.734 |
|
| 2012 |
Daniels KM, Daas BK, Srivastava N, Williams C, Feenstra RM, Sudarshan TS, Chandrashekhar MVS. Evidences of electrochemical graphene functionalization and substrate dependence by Raman and scanning tunneling spectroscopies Journal of Applied Physics. 111. DOI: 10.1063/1.4725489 |
0.693 |
|
| 2010 |
Luxmi, Srivastava N, Feenstra RM, Fisher PJ. Formation of epitaxial graphene on SiC(0001) using vacuum or argon environments Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C5C1-C5C7. DOI: 10.1116/1.3420393 |
0.77 |
|
| 2010 |
Fisher PJ, Luxmi, Srivastava N, Nie S, Feenstra RM. Thickness monitoring of graphene on SiC using low-energy electron diffraction Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 28: 958-962. DOI: 10.1116/1.3301621 |
0.751 |
|
| 2010 |
Luxmi, Srivastava N, He G, Feenstra RM, Fisher PJ. Comparison of graphene formation on C-face and Si-face SiC {0001} surfaces Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.235406 |
0.732 |
|
| 2009 |
Fisher PJ, Srivastava N, Feenstra RM, Sun Y, Kedzierski J, Healey P, Gu G, Luxmi. Morphology of graphene on SiC (000 1-) surfaces Applied Physics Letters. 95. DOI: 10.1063/1.3207757 |
0.752 |
|
| 2009 |
Gu G, Luxmi, Fisher PJ, Srivastava N, Feenstra RM. The influence of the band structure of epitaxial graphene on SiC on the transistor characteristics Solid State Communications. 149: 2194-2198. DOI: 10.1016/J.Ssc.2009.09.014 |
0.738 |
|
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