Emanuel Tutuc, Ph.D. - Publications

Affiliations: 
2004 Princeton University, Princeton, NJ 
Area:
Condensed Matter Physics

133 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Smith B, Fleming G, Parrish KD, Wen F, Fleming E, Jarvis K, Tutuc E, McGaughey AJH, Shi L. Mean Free Path Suppression of Low-Frequency Phonons in SiGe Nanowires. Nano Letters. PMID 33054227 DOI: 10.1021/acs.nanolett.0c03590  1
2020 Wang Y, Dev S, Yang F, Nordin L, Wang Y, Briggs A, Allen M, Allen J, Tutuc E, Wasserman D. InSb pixel loaded microwave resonator for high-speed mid-wave infrared detection Infrared Physics & Technology. 109: 103390. DOI: 10.1016/J.Infrared.2020.103390  0.8
2019 Paik EY, Zhang L, Burg GW, Gogna R, Tutuc E, Deng H. Interlayer exciton laser of extended spatial coherence in atomically thin heterostructures. Nature. PMID 31768043 DOI: 10.1038/S41586-019-1779-X  0.52
2019 Burg GW, Zhu J, Taniguchi T, Watanabe K, MacDonald AH, Tutuc E. Correlated Insulating States in Twisted Double Bilayer Graphene. Physical Review Letters. 123: 197702. PMID 31765206 DOI: 10.1103/Physrevlett.123.197702  0.88
2019 Dev S, Wang Y, Kim K, Zamiri M, Kadlec C, Goldflam M, Hawkins S, Shaner E, Kim J, Krishna S, Allen M, Allen J, Tutuc E, Wasserman D. Measurement of carrier lifetime in micron-scaled materials using resonant microwave circuits. Nature Communications. 10: 1625. PMID 30967546 DOI: 10.1038/S41467-019-09602-2  1
2019 Wu F, Lovorn T, Tutuc E, Martin I, MacDonald AH. Topological Insulators in Twisted Transition Metal Dichalcogenide Homobilayers. Physical Review Letters. 122: 086402. PMID 30932597 DOI: 10.1103/Physrevlett.122.086402  0.8
2019 Tran K, Moody G, Wu F, Lu X, Choi J, Kim K, Rai A, Sanchez DA, Quan J, Singh A, Embley J, Zepeda A, Campbell M, Autry T, Taniguchi T, ... ... Tutuc E, et al. Evidence for moiré excitons in van der Waals heterostructures. Nature. PMID 30804527 DOI: 10.1038/S41586-019-0975-Z  1
2019 Wen F, Shabani J, Tutuc E. Josephson Junction Field-Effect Transistors for Boolean Logic Cryogenic Applications Ieee Transactions On Electron Devices. 66: 5367-5374. DOI: 10.1109/Ted.2019.2951634  1
2019 Zhang L, Gogna R, Burg GW, Horng J, Paik E, Chou YH, Kim K, Tutuc E, Deng H. Highly valley-polarized singlet and triplet interlayer excitons in van der Waals heterostructure Physical Review B. 100: 41402. DOI: 10.1103/Physrevb.100.041402  1
2018 Kim K, Prasad N, Movva HCP, Burg GW, Wang Y, Larentis S, Taniguchi T, Watanabe K, Register LF, Tutuc E. Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures. Nano Letters. PMID 30105907 DOI: 10.1021/Acs.Nanolett.8B02770  1
2018 Huang S, Kim K, Efimkin DK, Lovorn T, Taniguchi T, Watanabe K, MacDonald AH, Tutuc E, LeRoy BJ. Topologically Protected Helical States in Minimally Twisted Bilayer Graphene. Physical Review Letters. 121: 037702. PMID 30085814 DOI: 10.1103/Physrevlett.121.037702  1
2018 Wu F, Lovorn T, Tutuc E, MacDonald AH. Hubbard Model Physics in Transition Metal Dichalcogenide Moiré Bands. Physical Review Letters. 121: 026402. PMID 30085734 DOI: 10.1103/Physrevlett.121.026402  0.8
2018 Burg GW, Prasad N, Kim K, Taniguchi T, Watanabe K, MacDonald AH, Register LF, Tutuc E. Strongly Enhanced Tunneling at Total Charge Neutrality in Double-Bilayer Graphene-WSe_{2} Heterostructures. Physical Review Letters. 120: 177702. PMID 29756812 DOI: 10.1103/Physrevlett.120.177702  1
2018 Movva HCP, Lovorn T, Fallahazad B, Larentis S, Kim K, Taniguchi T, Watanabe K, Banerjee SK, MacDonald AH, Tutuc E. Tunable Γ-K Valley Populations in Hole-Doped Trilayer WSe_{2}. Physical Review Letters. 120: 107703. PMID 29570322 DOI: 10.1103/Physrevlett.120.107703  1
2018 Zhang L, Gogna R, Burg W, Tutuc E, Deng H. Photonic-crystal exciton-polaritons in monolayer semiconductors. Nature Communications. 9: 713. PMID 29459736 DOI: 10.1038/S41467-018-03188-X  0.48
2018 Wen F, Tutuc E. Strained SixGe1−x-Ge-Si core-double-shell nanowire heterostructures for simultaneous hole and electron mobility enhancement Applied Physics Letters. 113: 113102. DOI: 10.1063/1.5047212  1
2017 Wen F, Tutuc E. Enhanced Electron Mobility in Nonplanar Tensile Strained Si Epitaxially Grown on SixGe1-x Nanowires. Nano Letters. PMID 29185763 DOI: 10.1021/Acs.Nanolett.7B03450  1
2017 Movva HCP, Fallahazad B, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe_{2}. Physical Review Letters. 118: 247701. PMID 28665633 DOI: 10.1103/Physrevlett.118.247701  1
2017 Burg GW, Prasad N, Fallahazad B, Valsaraj A, Kim K, Taniguchi T, Watanabe K, Wang Q, Kim MJ, Register LF, Tutuc E. Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene - WSe2 Heterostructures. Nano Letters. PMID 28557462 DOI: 10.1021/Acs.Nanolett.7B01505  1
2017 Larentis S, Fallahazad B, Movva HCP, Kim K, Rai A, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits. Acs Nano. PMID 28414214 DOI: 10.1021/Acsnano.7B01306  1
2017 Kim K, DaSilva A, Huang S, Fallahazad B, Larentis S, Taniguchi T, Watanabe K, LeRoy BJ, MacDonald AH, Tutuc E. Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene. Proceedings of the National Academy of Sciences of the United States of America. PMID 28292902 DOI: 10.1073/Pnas.1620140114  1
2017 Hsu W, Wen F, Wang X, Wang Y, Dolocan A, Roy A, Kim T, Tutuc E, Banerjee SK. Laser Spike Annealing for Shallow Junctions in Ge CMOS Ieee Transactions On Electron Devices. 64: 346-352. DOI: 10.1109/Ted.2016.2635625  1
2016 Kim K, Yankowitz M, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Correction to van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 27526261 DOI: 10.1021/Acs.Nanolett.6B03255  1
2016 Lee K, Xue J, Dillen DC, Watanabe K, Taniguchi T, Tutuc E. Giant Frictional Drag in Double Bilayer Graphene Heterostructures. Physical Review Letters. 117: 046803. PMID 27494492 DOI: 10.1103/Physrevlett.117.046803  1
2016 Kang S, Prasad N, Movva HC, Rai A, Kim K, Mou X, Taniguchi T, Watanabe K, Register LF, Tutuc E, Banerjee SK. Effects of Electrode Layer Band Structure on the Performance of Multi-Layer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors. Nano Letters. PMID 27416362 DOI: 10.1021/Acs.Nanolett.6B01646  1
2016 Dabidian N, Dutta Gupta S, Kholmanov I, Lai K, Lu F, Lee J, Jin M, Trendafilov S, Khanikaev A, Fallahazad B, Tutuc E, Belkin MA, Shvets G. Experimental Demonstration of Phase Modulation and Motion Sensing Using Graphene-Integrated Metasurfaces. Nano Letters. PMID 27152557 DOI: 10.1021/Acs.Nanolett.6B00732  1
2016 Fallahazad B, Movva HC, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe_{2}: Landau Level Degeneracy, Effective Mass, and Negative Compressibility. Physical Review Letters. 116: 086601. PMID 26967432 DOI: 10.1103/Physrevlett.116.086601  1
2016 Roy A, Movva HC, Satpati B, Kim K, Dey R, Rai A, Pramanik T, Guchhait S, Tutuc E, Banerjee SK. Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy. Acs Applied Materials & Interfaces. PMID 26939890 DOI: 10.1021/Acsami.6B00961  1
2016 Kim K, Yankowitz MA, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 26859527 DOI: 10.1021/Acs.Nanolett.5B05263  1
2016 Hsu W, Wang X, Wen F, Wang Y, Dolocan A, Kim T, Tutuc E, Banerjee SK. High Phosphorus Dopant Activation in Germanium Using Laser Spike Annealing Ieee Electron Device Letters. 37: 1088-1091. DOI: 10.1109/Led.2016.2587829  1
2016 Corbet CM, Sonde SS, Tutuc E, Banerjee SK. Improved contact resistance in ReSe2 thin film field-effect transistors Applied Physics Letters. 108. DOI: 10.1063/1.4947468  1
2016 Gearba RI, Kim M, Mueller KM, Veneman PA, Lee K, Holliday BJ, Chan CK, Chelikowsky JR, Tutuc E, Stevenson KJ. Atomically Resolved Elucidation of the Electrochemical Covalent Molecular Grafting Mechanism of Single Layer Graphene Advanced Materials Interfaces. 3. DOI: 10.1002/Admi.201600196  1
2015 Dillen D, Wen F, Kim K, Tutuc E. Coherently strained Si-SixGe1-x core-shell nanowire heterostructures. Nano Letters. PMID 26606651 DOI: 10.1021/Acs.Nanolett.5B03961  1
2015 Movva HC, Rai A, Kang S, Kim K, Fallahazad B, Taniguchi T, Watanabe K, Tutuc E, Banerjee SK. High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors. Acs Nano. PMID 26343531 DOI: 10.1021/Acsnano.5B04611  1
2015 Rai A, Valsaraj A, Movva HC, Roy A, Ghosh R, Sonde S, Kang S, Chang J, Trivedi T, Dey R, Guchhait S, Larentis S, Register LF, Tutuc E, Banerjee SK. Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation. Nano Letters. PMID 26091062 DOI: 10.1021/Acs.Nanolett.5B00314  1
2015 Zhang Z, Dillen DC, Tutuc E, Yu ET. Strain and Hole Gas Induced Raman Shifts in Ge-Si(x)Ge(1-x) Core-Shell Nanowires Using Tip-Enhanced Raman Spectroscopy. Nano Letters. 15: 4303-10. PMID 26053999 DOI: 10.1021/Acs.Nanolett.5B00176  1
2015 Kim K, Larentis S, Fallahazad B, Lee K, Xue J, Dillen DC, Corbet CM, Tutuc E. Band Alignment in WSe2-Graphene Heterostructures. Acs Nano. 9: 4527-32. PMID 25768037 DOI: 10.1021/Acsnano.5B01114  1
2015 Yankowitz M, Larentis S, Kim K, Xue J, McKenzie D, Huang S, Paggen M, Ali MN, Cava RJ, Tutuc E, LeRoy BJ. Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures. Nano Letters. 15: 1925-9. PMID 25665012 DOI: 10.1021/Nl5047736  1
2015 Corbet CM, McClellan C, Rai A, Sonde SS, Tutuc E, Banerjee SK. Field effect transistors with current saturation and voltage gain in ultrathin ReS2. Acs Nano. 9: 363-70. PMID 25514177 DOI: 10.1021/Nn505354A  1
2015 Fallahazad B, Lee K, Kang S, Xue J, Larentis S, Corbet C, Kim K, Movva HC, Taniguchi T, Watanabe K, Register LF, Banerjee SK, Tutuc E. Gate-tunable resonant tunneling in double bilayer graphene heterostructures. Nano Letters. 15: 428-33. PMID 25436861 DOI: 10.1021/Nl503756Y  1
2015 Park HJ, Nah JH, Tutuc E, Seol JH. Thermal conductivity measurement of Ge-SixGe1-x core-shell nanowires using suspended microdevices Transactions of the Korean Society of Mechanical Engineers, B. 39: 825-829. DOI: 10.3795/Ksme-B.2015.39.10.825  1
2015 Kang S, Fallahazad B, Lee K, Movva H, Kim K, Corbet CM, Taniguchi T, Watanabe K, Colombo L, Register LF, Tutuc E, Banerjee SK. Bilayer Graphene-Hexagonal Boron Nitride Heterostructure Negative Differential Resistance Interlayer Tunnel FET Ieee Electron Device Letters. 36: 405-407. DOI: 10.1109/Led.2015.2398737  0.72
2014 Corbet CM, McClellan C, Kim K, Sonde S, Tutuc E, Banerjee SK. Oxidized titanium as a gate dielectric for graphene field effect transistors and its tunneling mechanisms. Acs Nano. 8: 10480-5. PMID 25259872 DOI: 10.1021/Nn5038509  1
2014 Lee K, Fallahazad B, Xue J, Dillen DC, Kim K, Taniguchi T, Watanabe K, Tutuc E. Bilayer graphene. Chemical potential and quantum Hall ferromagnetism in bilayer graphene. Science (New York, N.Y.). 345: 58-61. PMID 24994645 DOI: 10.1126/Science.1251003  1
2014 Larentis S, Tolsma JR, Fallahazad B, Dillen DC, Kim K, MacDonald AH, Tutuc E. Band offset and negative compressibility in graphene-MoS2 heterostructures. Nano Letters. 14: 2039-45. PMID 24611616 DOI: 10.1021/Nl500212S  1
2014 Dillen DC, Kim K, Liu ES, Tutuc E. Radial modulation doping in core-shell nanowires. Nature Nanotechnology. 9: 116-20. PMID 24441982 DOI: 10.1038/Nnano.2013.301  1
2014 Chang J, Larentis S, Tutuc E, Register LF, Banerjee SK. Atomistic simulation of the electronic states of adatoms in monolayer MoS2 Applied Physics Letters. 104. DOI: 10.1063/1.4870767  1
2013 Hao Y, Bharathi MS, Wang L, Liu Y, Chen H, Nie S, Wang X, Chou H, Tan C, Fallahazad B, Ramanarayan H, Magnuson CW, Tutuc E, Yakobson BI, McCarty KF, et al. The role of surface oxygen in the growth of large single-crystal graphene on copper. Science (New York, N.Y.). 342: 720-3. PMID 24158906 DOI: 10.1126/Science.1243879  1
2013 Ahn JH, Subbaraman H, Zhu L, Chakravarty S, Tutuc E, Chen RT. 2D silicon-based surface-normal vertical cavity photonic crystal waveguide array for high-density optical interconnects Proceedings of Spie. 8630. DOI: 10.1117/12.2009449  0.36
2013 Lee K, Fallahazad B, Min H, Tutuc E. Transport Gap in Dual-Gated Graphene Bilayers Using Oxides as Dielectrics Ieee Transactions On Electron Devices. 60: 103-108. DOI: 10.1109/Ted.2012.2228203  1
2012 Kim S, Jo I, Dillen DC, Ferrer DA, Fallahazad B, Yao Z, Banerjee SK, Tutuc E. Direct measurement of the Fermi energy in graphene using a double-layer heterostructure. Physical Review Letters. 108: 116404. PMID 22540496 DOI: 10.1103/Physrevlett.108.116404  1
2012 Nah J, Dillen DC, Varahramyan KM, Banerjee SK, Tutuc E. Role of confinement on carrier transport in Ge-Si(x)Ge(1-x) core-shell nanowires. Nano Letters. 12: 108-12. PMID 22111925 DOI: 10.1021/Nl2030695  1
2012 Zhai Y, Palard M, Mathew L, Hussain MM, Willson CG, Tutuc E, Banerjee SK. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays Micro and Nanosystems. 4: 333-338. DOI: 10.2174/1876402911204040333  1
2012 Wang Z, Chen YP, Zhu H, Engel LW, Tsui DC, Tutuc E, Shayegan M. Unequal layer densities in bilayer Wigner crystal at high magnetic fields Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.195408  1
2012 Movva HCP, Ramón ME, Corbet CM, Sonde S, Fahad Chowdhury S, Carpenter G, Tutuc E, Banerjee SK. Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions Applied Physics Letters. 101. DOI: 10.1063/1.4765658  1
2011 Ramón ME, Gupta A, Corbet C, Ferrer DA, Movva HC, Carpenter G, Colombo L, Bourianoff G, Doczy M, Akinwande D, Tutuc E, Banerjee SK. CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films. Acs Nano. 5: 7198-204. PMID 21800895 DOI: 10.1021/Nn202012M  1
2011 Kim S, Lee K, Tutuc E. Spin-polarized to valley-polarized transition in graphene bilayers at ν=0 in high magnetic fields. Physical Review Letters. 107: 016803. PMID 21797563 DOI: 10.1103/Physrevlett.107.016803  1
2011 Lee K, Kim S, Points MS, Beechem TE, Ohta T, Tutuc E. Magnetotransport properties of quasi-free-standing epitaxial graphene bilayer on SiC: evidence for Bernal stacking. Nano Letters. 11: 3624-8. PMID 21797267 DOI: 10.1021/Nl201430A  1
2011 Jo I, Hsu IK, Lee YJ, Sadeghi MM, Kim S, Cronin S, Tutuc E, Banerjee SK, Yao Z, Shi L. Low-frequency acoustic phonon temperature distribution in electrically biased graphene. Nano Letters. 11: 85-90. PMID 21126050 DOI: 10.1021/Nl102858C  1
2011 Jamil M, Mantey J, Onyegam EU, Carpenter GD, Tutuc E, Banerjee SK. High-Performance Ge nMOSFETs With $\hbox{n}^{+}\hbox{-} \hbox{p}$ Junctions Formed by “Spin-On Dopant” Ieee Electron Device Letters. 32: 1203-1205. DOI: 10.1109/Led.2011.2160142  1
2011 Chiu Y, Padmanabhan M, Gokmen T, Shabani J, Tutuc E, Shayegan M, Winkler R. Effective mass and spin susceptibility of dilute two-dimensional holes in GaAs Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.155459  1
2011 Liu ES, Nah J, Varahramyan KM, Tutuc E. Erratum: Lateral spin injection in Germanium nanowires (Nano Letters (2010) 10 (3297) DOI: 10.1021/nl1008663) Nano Letters. 11. DOI: 10.1021/Nl2027876  1
2011 Gunawan O, Wang K, Fallahazad B, Zhang Y, Tutuc E, Guha S. High performance wire-array silicon solar cells Progress in Photovoltaics: Research and Applications. 19: 307-312. DOI: 10.1002/Pip.1027  1
2010 Wang KA, Gunawan O, Moumen N, Tulevski G, Mohamed H, Fallahazad B, Tutuc E, Guha S. Wire textured, multi-crystalline Si solar cells created using self-assembled masks. Optics Express. 18: A568-74. PMID 21165090 DOI: 10.1364/Oe.18.00A568  1
2010 Liu ES, Nah J, Varahramyan KM, Tutuc E. Lateral spin injection in germanium nanowires. Nano Letters. 10: 3297-301. PMID 20707379 DOI: 10.1021/Nl1008663  1
2010 Hosseini A, Kwong D, Zhang Y, Chandorkar SA, Crnogorac F, Carlson A, Fallah B, Bank S, Tutuc E, Rogers J, Pease RFW, Chen RT. On the fabrication of three-dimensional silicon-on-insulator based optical phased array for agile and large angle laser beam steering systems Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C6O1-C6O7. DOI: 10.1116/1.3511508  1
2010 Liu E, Jain N, Varahramyan KM, Nah J, Banerjee SK, Tutuc E. Role of Metal–Semiconductor Contact in Nanowire Field-Effect Transistors Ieee Transactions On Nanotechnology. 9: 237-242. DOI: 10.1109/Tnano.2009.2027119  1
2010 Nah J, Liu ES, Varahramyan KM, Tutuc E. Ge-SixGe1-x coreShell nanowire tunneling field-effect transistors Ieee Transactions On Electron Devices. 57: 1883-1888. DOI: 10.1109/Ted.2010.2051249  1
2010 Reddy D, Register LF, Tutuc E, Banerjee SK. Bilayer pseudospin field-effect transistor: Applications to boolean logic Ieee Transactions On Electron Devices. 57: 755-764. DOI: 10.1109/Ted.2010.2041280  1
2010 Nah J, Liu ES, Varahramyan KM, Shahrjerdi D, Banerjee SK, Tutuc E. Scaling properties of Ge-SixGe1-x coreshell nanowire field-effect transistors Ieee Transactions On Electron Devices. 57: 491-495. DOI: 10.1109/Ted.2009.2037406  1
2010 Jamil M, Liu ES, Ferdousi F, Donnelly JP, Tutuc E, Banerjee SK. Effects of Si-cap thickness and temperature on device performance of Si/Ge1-xCx/Si p-MOSFETs Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/4/045005  1
2009 Li X, Cai W, An J, Kim S, Nah J, Yang D, Piner R, Velamakanni A, Jung I, Tutuc E, Banerjee SK, Colombo L, Ruoff RS. Large-area synthesis of high-quality and uniform graphene films on copper foils. Science (New York, N.Y.). 324: 1312-4. PMID 19423775 DOI: 10.1126/Science.1171245  1
2009 Banerjee SK, Register LF, Tutuc E, Reddy D, MacDonald AH. Bilayer pseudospin field-effect transistor (BiSFET): A proposed new logic device Ieee Electron Device Letters. 30: 158-160. DOI: 10.1109/Led.2008.2009362  1
2009 Chen YS, Zhao Y, Hosseini A, Kwong D, Jiang W, Bank SR, Tutuc E, Chen RT. Delay-time-enhanced flat-band photonic crystal waveguides with capsule-shaped holes on silicon nanomembrane Ieee Journal On Selected Topics in Quantum Electronics. 15: 1510-1514. DOI: 10.1109/Jstqe.2009.2020811  1
2009 Gokmen T, Padmanabhan M, Vakili K, Tutuc E, Shayegan M. Effective mass suppression upon complete spin-polarization in an isotropic two-dimensional electron system Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.195311  1
2009 Tutuc E, Pillarisetty R, Shayegan M. Giant frictional drag in strongly interacting bilayers near filling factor one Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.041303  1
2009 Kim S, Nah J, Jo I, Shahrjerdi D, Colombo L, Yao Z, Tutuc E, Banerjee SK. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric Applied Physics Letters. 94. DOI: 10.1063/1.3077021  1
2008 Shahrjerdi D, Rotter T, Balakrishnan G, Huffaker D, Tutuc E, Banerjee SK. Fabrication of self-aligned enhancement-mode In0.53 Ga0.47As MOSFETs with TaN/HfO2/AlN gate stack Ieee Electron Device Letters. 29: 557-560. DOI: 10.1109/Led.2008.922031  1
2008 Misra S, Bishop NC, Tutuc E, Shayegan M. Dynamics of density imbalanced bilayer holes in the quantum Hall regime Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.035322  1
2008 Misra S, Bishop NC, Tutuc E, Shayegan M. Tunneling between dilute GaAs hole layers Physical Review B - Condensed Matter and Materials Physics. 77. DOI: 10.1103/Physrevb.77.161301  1
2008 Bishop NC, Padmanabhan M, Gunawan O, Gokmen T, De Poortere EP, Shkolnikov YP, Tutuc E, Vakili K, Shayegan M. Valley susceptibility of interacting electrons and composite fermions Physica E: Low-Dimensional Systems and Nanostructures. 40: 986-989. DOI: 10.1016/J.Physe.2007.08.067  1
2007 Wang Z, Chen YP, Engel LW, Tsui DC, Tutuc E, Shayegan M. Pinning modes and interlayer correlation in high-magnetic-field bilayer Wigner solids. Physical Review Letters. 99: 136804. PMID 17930621 DOI: 10.1103/Physrevlett.99.136804  1
2007 Shayegan M, De Poortere EP, Gunawan O, Shkolnikov YP, Tutuc E, Vakili K. Quantum hall effect in a multi-valley two-dimensional electron system International Journal of Modern Physics B. 21: 1388-1397. DOI: 10.1142/S0217979207042884  1
2007 Gokmen T, Padmanabhan M, Tutuc E, Shayegan M, De Palo S, Moroni S, Senatore G. Spin susceptibility of interacting two-dimensional electrons with anisotropic effective mass Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.233301  1
2007 Faniel S, Moldovan L, Vlad A, Tutuc E, Bishop N, Melinte S, Shayegan M, Bayot V. In-plane magnetic-field-induced metal-insulator transition in (311)A GaAs two-dimensional hole systems probed by thermopower Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.161307  1
2007 Shahrjerdi D, Tutuc E, Banerjee SK. Impact of surface chemical treatment on capacitance-voltage characteristics of GaAs metal-oxide-semiconductor capacitors with Al2 O3 gate dielectric Applied Physics Letters. 91. DOI: 10.1063/1.2764438  1
2007 Habib B, Tutuc E, Shayegan M. Strong Aharonov-Bohm oscillations in GaAs two-dimensional holes Applied Physics Letters. 90. DOI: 10.1063/1.2720711  1
2007 Tutuc E, Shayegan M. Charge neutral counterflow transport at filling factor 1 in GaAs hole bilayers Solid State Communications. 144: 405-408. DOI: 10.1016/J.Ssc.2007.07.040  1
2006 Tutuc E, Appenzeller J, Reuter MC, Guha S. Realization of a linear germanium nanowire p-n junction. Nano Letters. 6: 2070-4. PMID 16968027 DOI: 10.1021/Nl061338F  1
2006 Vakili K, Shkolnikov YP, Tutuc E, De Poortere EP, Padmanabhan M, Shayegan M. High-mobility AlAs quantum wells with out-of-plane valley occupation Applied Physics Letters. 89. DOI: 10.1063/1.2370504  1
2006 Jagannathan H, Nishi Y, Reuter M, Copel M, Tutuc E, Guha S, Pezzi RP. Effect of oxide overlayer formation on the growth of gold catalyzed epitaxial silicon nanowires Applied Physics Letters. 88. DOI: 10.1063/1.2179370  1
2006 Tutuc E, Guha S, Chu JO. Morphology of germanium nanowires grown in presence of B2H6 Applied Physics Letters. 88: 43113. DOI: 10.1063/1.2165089  0.6
2006 Vakili K, Tutuc E, Shayegan M. Zeeman splitting of interacting two-dimensional electrons with two effective masses Solid State Communications. 140: 285-288. DOI: 10.1016/J.Ssc.2006.08.033  1
2006 Faniel S, Tutuc E, De Poortere EP, Gustin C, Vlad A, Moldovan L, Melinte S, Shayegan M, Bayot V. Thermopower evidence for Wigner crystallization in the insulating phase of two-dimensional GaAs bilayer hole systems Physica E: Low-Dimensional Systems and Nanostructures. 34: 120-123. DOI: 10.1016/J.Physe.2006.02.040  1
2006 Vakili K, Shkolnikov YP, Tutuc E, Bishop NC, De Poortere EP, Shayegan M. Spin-dependent resistivity and quantum Hall ferromagnetism in two-dimensional electrons confined to AlAs quantum wells Physica E: Low-Dimensional Systems and Nanostructures. 34: 89-92. DOI: 10.1016/J.Physe.2006.02.026  1
2006 Pillarisetty R, Noh H, Tutuc E, De Poortere EP, Tsui DC, Shayegan M. Coulomb drag experiments in low density 2D hole bilayers Physica E: Low-Dimensional Systems and Nanostructures. 34: 63-68. DOI: 10.1016/J.Physe.2006.02.017  1
2006 Tutuc E, Shayegan M. Bilayer counterflow transport at filling factor 1 in the strong interacting regime Physica E: Low-Dimensional Systems and Nanostructures. 34: 11-15. DOI: 10.1016/J.Physe.2006.02.012  1
2006 Shayegan M, De Poortere EP, Gunawan O, Shkolnikov YP, Tutuc E, Vakili K. Two-dimensional electrons occupying multiple valleys in AlAs Physica Status Solidi (B) Basic Research. 243: 3629-3642. DOI: 10.1002/Pssb.200642212  1
2005 Vakili K, Shkolnikov YP, Tutuc E, Bishop NC, De Poortere EP, Shayegan M. Spin-dependent resistivity at transitions between integer quantum hall states. Physical Review Letters. 94: 176402. PMID 15904319 DOI: 10.1103/Physrevlett.94.176402  1
2005 Faniel S, Tutuc E, De Poortere EP, Gustin C, Vlad A, Melinte S, Shayegan M, Bayot V. Thermopower of interacting GaAs bilayer hole systems in the reentrant insulating phase near nu=1. Physical Review Letters. 94: 046802. PMID 15783582 DOI: 10.1103/Physrevlett.94.046802  1
2005 Pillarisetty R, Noh H, Tutuc E, Poortere EP, Tsui DC, Shayegan M. Spin polarization dependence of the coulomb drag at large r(s). Physical Review Letters. 94: 016807. PMID 15698117 DOI: 10.1103/Physrevlett.94.016807  1
2005 Winkler R, Tutuc E, Papadakis SJ, Melinte S, Shayegan M, Wasserman D, Lyon SA. Anomalous spin polarization of GaAs two-dimensional hole systems Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.195321  1
2005 Tutuc E, Shayegan M. Interaction and disorder in bilayer counterflow transport at filling-factor one Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.081307  1
2005 Pillarisetty R, Noh H, Tutuc E, De Poortere EP, Lai K, Tsui DC, Shayegan M. Coulomb drag near the metal-insulator transition in two dimensions Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.115307  1
2004 Gunawan O, Shkolnikov YP, Poortere EP, Tutuc E, Shayegan M. Ballistic electron transport in AlAs quantum wells. Physical Review Letters. 93: 246603. PMID 15697841 DOI: 10.1103/Physrevlett.93.246603  1
2004 Tutuc E, Shayegan M, Huse DA. Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing. Physical Review Letters. 93: 036802. PMID 15323852 DOI: 10.1103/Physrevlett.93.036802  1
2004 Vakili K, Shkolnikov YP, Tutuc E, De Poortere EP, Shayegan M. Spin susceptibility of two-dimensional electrons in narrow AlAs quantum wells. Physical Review Letters. 92: 226401. PMID 15245241 DOI: 10.1103/Physrevlett.92.226401  1
2004 Vakili K, Shkolnikov YP, Tutuc E, De Poortere EP, Shayegan M. Realization of an interacting two-valley AlAs bilayer system. Physical Review Letters. 92: 186404. PMID 15169516 DOI: 10.1103/Physrevlett.92.186404  1
2004 Melinte S, Berciu M, Zhou C, Tutuc E, Papadakis SJ, Harrison C, De Poortere EP, Wu M, Chaikin PM, Shayegan M, Bhatt RN, Register RA. Laterally modulated 2D electron system in the extreme quantum limit. Physical Review Letters. 92: 036802. PMID 14753891 DOI: 10.1103/Physrevlett.92.036802  1
2004 Tutuc E, Shayegan M. Counterflow measurements in GaAs hole bilayers: Possible evidence for excitonic condensation International Journal of Modern Physics B. 18: 3685-3692. DOI: 10.1142/S0217979204027281  1
2004 Habib B, Tutuc E, Melinte S, Shayegan M, Wasserman D, Lyon SA, Winkler R. Spin splitting in GaAs (100) two-dimensional holes Physical Review B - Condensed Matter and Materials Physics. 69: 1133111-1133114. DOI: 10.1103/Physrevb.69.113311  1
2004 Habib B, Tutuc E, Melinte S, Shayegan M, Wasserman D, Lyon SA, Winkler R. Negative differential Rashba effect in two-dimensional hole systems Applied Physics Letters. 85: 3151-3153. DOI: 10.1063/1.1806543  1
2004 Pillarisetty R, Noh H, Tutuc E, De Poortere EP, Tsui DC, Shayegan M. Frictional drag between dilute two-dimensional hole systems Physica E: Low-Dimensional Systems and Nanostructures. 22: 300-303. DOI: 10.1016/J.Physe.2003.12.006  1
2004 Tutuc E, Melinte S, De Poortere EP, Pillarisetty R, Shayegan M. Interacting GaAs bilayer hole systems with layer density imbalance Physica E: Low-Dimensional Systems and Nanostructures. 22: 32-35. DOI: 10.1016/J.Physe.2003.11.209  1
2003 De Poortere EP, Tutuc E, Shayegan M. Critical resistance in the AlAs quantum Hall ferromagnet. Physical Review Letters. 91: 216802. PMID 14683327 DOI: 10.1103/Physrevlett.91.216802  1
2003 Tutuc E, Melinte S, De Poortere EP, Pillarisetty R, Shayegan M. Role of density imbalance in an interacting bilayer hole system. Physical Review Letters. 91: 076802. PMID 12935040 DOI: 10.1103/Physrevlett.91.076802  1
2003 Pillarisetty R, Noh H, Tutuc E, De Poortere EP, Tsui DC, Shayegan M. In-plane magnetodrag between dilute two-dimensional systems. Physical Review Letters. 90: 226801. PMID 12857330 DOI: 10.1103/Physrevlett.90.226801  1
2003 Tutuc E, Pillarisetty R, Melinte S, De Poortere EP, Shayegan M. Layer-charge instability in unbalanced bilayer systems in the quantum Hall regime Physical Review B - Condensed Matter and Materials Physics. 68: 2013081-2013084. DOI: 10.1103/Physrevb.68.201308  1
2003 Tutuc E, Melinte S, De Poortere EP, Shayegan M, Winkler R. Role of finite layer thickness in spin polarization of GaAs two-dimensional electrons in strong parallel magnetic fields Physical Review B - Condensed Matter and Materials Physics. 67: 2413091-2413094. DOI: 10.1103/Physrevb.67.241309  1
2003 De Poortere EP, Tutuc E, Pillarisetty R, Melinte S, Shayegan M. Magnetism and pseudo-magnetism in quantum Hall systems Physica E: Low-Dimensional Systems and Nanostructures. 20: 123-132. DOI: 10.1016/J.Physe.2003.09.029  1
2002 Shkolnikov YP, De Poortere EP, Tutuc E, Shayegan M. Valley splitting of AlAs two-dimensional electrons in a perpendicular magnetic field. Physical Review Letters. 89: 226805. PMID 12485094 DOI: 10.1103/Physrevlett.89.226805  1
2002 Pillarisetty R, Noh H, Tsui DC, De Poortere EP, Tutuc E, Shayegan M. Frictional drag between two dilute two-dimensional hole layers. Physical Review Letters. 89: 016805. PMID 12097063 DOI: 10.1103/Physrevlett.89.016805  1
2002 Tutuc E, Melinte S, Shayegan M. Spin polarization and g factor of a dilute GaAs two-dimensional electron system. Physical Review Letters. 88: 036805. PMID 11801080 DOI: 10.1103/Physrevlett.88.036805  1
2002 De Poortere EP, Tutuc E, Shkolnikov YP, Vakili K, Shayegan M, Palm E, Murphy T. Quantum hall effect in AlAs 2D electron systems International Journal of Modern Physics B. 16: 2917-2922. DOI: 10.1142/9789812777805_0001  1
2002 De Poortere EP, Tutuc E, Shkolnikov YP, Vakili K, Shayegan M. Magnetic-field-induced spin polarization of AlAs two-dimensional electrons Physical Review B - Condensed Matter and Materials Physics. 66: 1613081-1613084. DOI: 10.1103/Physrevb.66.161308  1
2002 Winkler R, Noh H, Tutuc E, Shayegan M. Anomalous Rashba spin splitting in two-dimensional hole systems Physical Review B - Condensed Matter and Materials Physics. 65: 1553031-1553034. DOI: 10.1103/Physrevb.65.155303  1
2002 De Poortere EP, Shkolnikov YP, Tutuc E, Papadakis SJ, Shayegan M, Palm E, Murphy T. Enhanced electron mobility and high order fractional quantum Hall states in AlAs quantum wells Applied Physics Letters. 80: 1583-1585. DOI: 10.1063/1.1456265  1
2002 Tutuc E, De Poortere EP, Papadakis SJ, Shayegan M. Spin polarization and transition from metallic to insulating behavior in 2D systems Physica E: Low-Dimensional Systems and Nanostructures. 13: 748-751. DOI: 10.1016/S1386-9477(02)00274-6  1
2002 Winkler R, Noh H, Tutuc E, Shayegan M. Anomalous giant Rashba spin splitting in two-dimensional hole systems Physica E: Low-Dimensional Systems and Nanostructures. 12: 428-431. DOI: 10.1016/S1386-9477(01)00329-0  1
2002 Tutuc E, Shayegan M. Measurements of the effective g-factor in dilute GaAs 2D electrons Physica E: Low-Dimensional Systems and Nanostructures. 12: 420-423. DOI: 10.1016/S1386-9477(01)00324-1  1
2002 De Poortere EP, Tutuc E, Shayegan M. Hysteretic resistance spikes at transitions between quantum Hall ferromagnets in AlAs 2D electrons Physica E: Low-Dimensional Systems and Nanostructures. 12: 36-38. DOI: 10.1016/S1386-9477(01)00301-0  1
2001 Tutuc E, De Poortere EP, Papadakis SJ, Shayegan M. In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems. Physical Review Letters. 86: 2858-61. PMID 11290057 DOI: 10.1103/Physrevlett.86.2858  1
2000 De Poortere EP, Tutuc E, Papadakis SJ, Shayegan M. Resistance spikes at transitions between quantum hall ferromagnets. Science (New York, N.Y.). 290: 1546-9. PMID 11090346 DOI: 10.1126/Science.290.5496.1546  1
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