Emanuel Tutuc, Ph.D. - Related publications

2004 Princeton University, Princeton, NJ 
Condensed Matter Physics
NOTE: We are testing a new system for identifying relevant work based on semantic analysis that identifies similarities between recently published papers and the current author's publications. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches.
50 most relevant papers in past 60 days:
Year Citation  Score
2019 Behera SK, Bora M, Paul Chowdhury SS, Deb P. Proximity effects in graphene and ferromagnetic CrBr van der Waals heterostructures. Physical Chemistry Chemical Physics : Pccp. 21: 25788-25796. PMID 31728470 DOI: 10.1039/c9cp05252f   
2019 Nigge P, Qu AC, Lantagne-Hurtubise É, Mårsell E, Link S, Tom G, Zonno M, Michiardi M, Schneider M, Zhdanovich S, Levy G, Starke U, Gutiérrez C, Bonn D, Burke SA, et al. Room temperature strain-induced Landau levels in graphene on a wafer-scale platform. Science Advances. 5: eaaw5593. PMID 31723598 DOI: 10.1126/sciadv.aaw5593   
2019 Arab A, Liu X, Koksal O, Yang W, Chandrasena RU, Middey S, Kareev M, Kumar S, Husanu MA, Yang Z, Gu L, Strocov VN, Lee TL, Minar J, Pentcheva R, et al. Electronic structure of a graphene-like artificial crystal of NdNiO3. Nano Letters. PMID 31644875 DOI: 10.1021/acs.nanolett.9b03962   
2019 Lu X, Stepanov P, Yang W, Xie M, Aamir MA, Das I, Urgell C, Watanabe K, Taniguchi T, Zhang G, Bachtold A, MacDonald AH, Efetov DK. Superconductors, orbital magnets and correlated states in magic-angle bilayer graphene. Nature. 574: 653-657. PMID 31666722 DOI: 10.1038/s41586-019-1695-0   
2019 Zhang H, Berthod C, Berger H, Giamarchi T, Morpurgo AF. Band Filling and Cross Quantum Capacitance in Ion-Gated Semiconducting Transition Metal Dichalcogenide Monolayers. Nano Letters. PMID 31670964 DOI: 10.1021/acs.nanolett.9b03667   
2019 Wu J, Qiu C, Feng S, Yao T, Yan Y, Lin S. A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector. Nanotechnology. PMID 31751950 DOI: 10.1088/1361-6528/ab5a08   
2019 Y X G, Ashtar M, Xu L, Ouyang ZW, Tong W, Yuan SL, Tian Z. The effect of carrier doping on magnetism and electronic behavior in double perovskite La2ZnIrO6. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 31703232 DOI: 10.1088/1361-648X/ab5597   
2019 Mori R, Marshall PB, Ahadi K, Denlinger JD, Stemmer S, Lanzara A. Controlling a Van Hove singularity and Fermi surface topology at a complex oxide heterostructure interface. Nature Communications. 10: 5534. PMID 31797932 DOI: 10.1038/s41467-019-13046-z   
2019 Tang CS, Yin X, Yang M, Wu D, Birowosuto MD, Wu J, Li C, Hettiarachchi C, Chin XY, Chang YH, Ouyang F, Dang C, Pennycook SJ, Feng YP, Wang S, et al. Three-Dimensional Resonant Exciton in Monolayer Tungsten Diselenide Actuated by Spin-Orbit Coupling. Acs Nano. PMID 31702890 DOI: 10.1021/acsnano.9b08385   
2019 Patil PD, Ghosh S, Wasala M, Lei S, Vajtai R, Ajayan PM, Ghosh A, Talapatra S. Gate-Induced Metal-Insulator Transition in 2D Van der Waals Layers of Copper Indium Selenide (CuInSe) Based Field-Effect Transistors (FETs). Acs Nano. PMID 31661261 DOI: 10.1021/acsnano.9b06846   
2019 Han MG, Garlow JA, Liu Y, Zhang H, Li J, DiMarzio D, Knight MW, Petrovic C, Jariwala D, Zhu Y. Topological magnetic-spin textures in two-dimensional van der Waals Cr2Ge2Te6. Nano Letters. PMID 31661617 DOI: 10.1021/acs.nanolett.9b02849   
2019 Tian Y, Gao W, Henriksen E, Chelikowsky JR, Yang L. Optically Driven Magnetic Phase Transition of Monolayer RuCl. Nano Letters. PMID 31637915 DOI: 10.1021/acs.nanolett.9b02523   
2019 Kalla M, Chebrolu NR, Chatterjee A. Magneto-transport properties of a single molecular transistor in the presence of electron-electron and electron-phonon interactions and quantum dissipation. Scientific Reports. 9: 16510. PMID 31712611 DOI: 10.1038/s41598-019-53008-5   
2019 Li C, Xu C, Cahen D, Jin Y. Unprecedented efficient electron transport across Au nanoparticles with up to 25-nm insulating SiO-shells. Scientific Reports. 9: 18336. PMID 31797902 DOI: 10.1038/s41598-019-54835-2   
2019 Marrazzo A, Gibertini M, Campi D, Mounet N, Marzari N. Relative abundance of Z2 topological order in exfoliable two-dimensional insulators. Nano Letters. PMID 31658415 DOI: 10.1021/acs.nanolett.9b02689   
2019 Lu Z, Wu Y, Xu Y, Ma C, Chen Y, Xu K, Zhang H, Zhu H, Fang Z. Ultrahigh electron mobility induced by strain engineering in direct semiconductor monolayer BiTeSe. Nanoscale. PMID 31641720 DOI: 10.1039/c9nr05725k   
2019 Pal A, Singh P, Gangwar VK, Joshi AG, Khuntia P, Dwivedi GD, Gupta PK, Alam M, Anand K, Sethupathi K, Ghosh AK, Chatterjee S. Probing the Griffiths like phase, unconventional dual glassy states, giant exchange bias effects and its correlation with its electronic structure in Pr2-xSrxCoMnO6. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 31671415 DOI: 10.1088/1361-648X/ab5326   
2019 Chen W, Sun Z, Wang Z, Gu L, Xu X, Wu S, Gao C. Direct observation of van der Waals stacking-dependent interlayer magnetism. Science (New York, N.Y.). 366: 983-987. PMID 31753996 DOI: 10.1126/science.aav1937   
2019 Mine H, Kobayashi A, Nakamura T, Inoue T, Pakdel S, Marian D, Gonzalez-Marin E, Maruyama S, Katsumoto S, Fortunelli A, Palacios JJ, Haruyama J. Laser-Beam-Patterned Topological Insulating States on Thin Semiconducting MoS_{2}. Physical Review Letters. 123: 146803. PMID 31702203 DOI: 10.1103/PhysRevLett.123.146803   
2019 Liang SJ, Cheng B, Cui X, Miao F. Van der Waals Heterostructures for High-Performance Device Applications: Challenges and Opportunities. Advanced Materials (Deerfield Beach, Fla.). e1903800. PMID 31608514 DOI: 10.1002/adma.201903800   
2019 Lombardi F, Lodi A, Ma J, Liu J, Slota M, Narita A, Myers WK, Müllen K, Feng X, Bogani L. Quantum units from the topological engineering of molecular graphenoids. Science (New York, N.Y.). 366: 1107-1110. PMID 31780554 DOI: 10.1126/science.aay7203   
2019 Le PTT, Phong TC, Yarmohammadi M. β-Borophene becomes a semiconductor and semimetal via a perpendicular electric field and dilute charged impurity. Physical Chemistry Chemical Physics : Pccp. 21: 21790-21797. PMID 31573022 DOI: 10.1039/c9cp04719k   
2019 Luican-Mayer A, Zhang Y, DiLullo A, Li Y, Fisher B, Ulloa SE, Hla SW. Negative differential resistance observed on the charge density wave of a transition metal dichalcogenide. Nanoscale. PMID 31728463 DOI: 10.1039/c9nr07857f   
2019 Coak MJ, Jarvis DM, Hamidov H, Haines C, Alireza PL, Liu C, Son S, Hwang I, Lampronti GI, Daisenberger D, Nahai-Williamson P, Wildes A, Saxena SS, Park JG. Tuning dimensionality in van-der-Waals antiferromagnetic Mott insulators TMPS3. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 31770744 DOI: 10.1088/1361-648X/ab5be8   
2019 Leaw JN, Tang HK, Trushin M, Assaad FF, Adam S. Universal Fermi-surface anisotropy renormalization for interacting Dirac fermions with long-range interactions. Proceedings of the National Academy of Sciences of the United States of America. PMID 31818954 DOI: 10.1073/pnas.1913096116   
2019 Kageura T, Hideko M, Tsuyuzaki I, Morishita A, Kawano A, Sasama Y, Yamaguchi T, Takano Y, Tachiki M, Ooi S, Hirata K, Arisawa S, Kawarada H. Single-crystalline boron-doped diamond superconducting quantum interference devices with regrowth-induced step edge structure. Scientific Reports. 9: 15214. PMID 31645621 DOI: 10.1038/s41598-019-51596-w   
2019 Xiao XB, Ye Q, Liu ZF, Wu QP, Li Y, Ai GP. Electric Field Controlled Indirect-Direct-Indirect Band Gap Transition in Monolayer InSe. Nanoscale Research Letters. 14: 322. PMID 31617005 DOI: 10.1186/s11671-019-3162-0   
2019 Zhao Y, Cai C, Zhang Y, Zhao X, Xu Y, Liang C, Niu Z, Shi Y, Che R. Control of electron tunnelling by fine band engineering of semiconductor potential barriers. Nanoscale. PMID 31674609 DOI: 10.1039/c9nr03268a   
2019 Xu Y, Sheng Y, Yang YF. Quasi-Two-Dimensional Fermi Surfaces and Unitary Spin-Triplet Pairing in the Heavy Fermion Superconductor UTe_{2}. Physical Review Letters. 123: 217002. PMID 31809164 DOI: 10.1103/PhysRevLett.123.217002   
2019 Anderson CP, Bourassa A, Miao KC, Wolfowicz G, Mintun PJ, Crook AL, Abe H, Ul Hassan J, Son NT, Ohshima T, Awschalom DD. Electrical and optical control of single spins integrated in scalable semiconductor devices. Science (New York, N.Y.). 366: 1225-1230. PMID 31806809 DOI: 10.1126/science.aax9406   
2019 Richter AF, Binder M, Bohn BJ, Grumbach N, Neyshtadt S, Urban AS, Feldmann J. Fast Electron and Slow Hole Relaxation in InP-Based Colloidal Quantum Dots. Acs Nano. PMID 31790203 DOI: 10.1021/acsnano.9b07969   
2019 Kim HH, Jiang S, Yang B, Zhong S, Tian S, Li C, Lei H, Shan J, Mak KF, Tsen AW. Magneto-Memristive Switching in a 2D Layer Antiferromagnet. Advanced Materials (Deerfield Beach, Fla.). e1905433. PMID 31647588 DOI: 10.1002/adma.201905433   
2019 Wang W, Gao D, Huang Y, Zhou T, Wang S. Spin transport properties of 1,4,5,8-naphthalenetetracarboxylic dianhydride based molecular devices. Physical Chemistry Chemical Physics : Pccp. PMID 31674629 DOI: 10.1039/c9cp04572d   
2019 Ye L, Chan MK, McDonald RD, Graf D, Kang M, Liu J, Suzuki T, Comin R, Fu L, Checkelsky JG. de Haas-van Alphen effect of correlated Dirac states in kagome metal FeSn. Nature Communications. 10: 4870. PMID 31653866 DOI: 10.1038/s41467-019-12822-1   
2019 Wang Z, Gibertini M, Dumcenco D, Taniguchi T, Watanabe K, Giannini E, Morpurgo AF. Determining the phase diagram of atomically thin layered antiferromagnet CrCl. Nature Nanotechnology. PMID 31712666 DOI: 10.1038/s41565-019-0565-0   
2019 Le NH, Lanskii GV, Aeppli G, Murdin BN. Giant non-linear susceptibility of hydrogenic donors in silicon and germanium. Light, Science & Applications. 8: 64. PMID 31645913 DOI: 10.1038/s41377-019-0174-6   
2019 Hao L, Wang Z, Yang J, Meyers D, Sanchez J, Fabbris G, Choi Y, Kim JW, Haskel D, Ryan PJ, Barros K, Chu JH, Dean MPM, Batista CD, Liu J. Anomalous magnetoresistance due to longitudinal spin fluctuations in a J = 1/2 Mott semiconductor. Nature Communications. 10: 5301. PMID 31757946 DOI: 10.1038/s41467-019-13271-6   
2019 Huang K, Wang P, Pfeiffer LN, West KW, Baldwin KW, Liu Y, Lin X. Resymmetrizing Broken Symmetry with Hydraulic Pressure. Physical Review Letters. 123: 206602. PMID 31809100 DOI: 10.1103/PhysRevLett.123.206602   
2019 March SA, Riley DB, Clegg C, Webber D, Hill IG, Yu ZG, Hall KC. Ultrafast acoustic phonon scattering in CHNHPbI revealed by femtosecond four-wave mixing. The Journal of Chemical Physics. 151: 144702. PMID 31615224 DOI: 10.1063/1.5120385   
2019 Bhattacharyya A, Panda K, Adroja DT, Kase N, Biswas PK, Saha S, Das T, Lees MR, Hillier AD. Investigation of superconducting gap structure in HfIrSi using muon spin relaxation/rotation. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 31689696 DOI: 10.1088/1361-648X/ab549e   
2019 Prakash A, Quackenbush NF, Yun H, Held JT, Wang T, Truttmann T, Ablett JM, Weiland C, Lee TL, Woicik JC, Mkhoyan KA, Jalan B. Separating Electrons and Donors in BaSnO via Band Engineering. Nano Letters. PMID 31702928 DOI: 10.1021/acs.nanolett.9b03825   
2019 Liu S, Wang L, Feng X, Liu J, Qin Y, Wang ZL. Piezotronic Tunneling Junction Gated by Mechanical Stimuli. Advanced Materials (Deerfield Beach, Fla.). e1905436. PMID 31643113 DOI: 10.1002/adma.201905436   
2019 Da Liao Y, Meng ZY, Xu XY. Valence Bond Orders at Charge Neutrality in a Possible Two-Orbital Extended Hubbard Model for Twisted Bilayer Graphene. Physical Review Letters. 123: 157601. PMID 31702323 DOI: 10.1103/PhysRevLett.123.157601   
2019 Niu B, Su T, Francisco BA, Ghosh S, Kargar F, Huang X, Lohmann M, Li J, Xu Y, Taniguchi T, Watanabe K, Wu D, Balandin AA, Shi J, Cui Y. Coexistence of Magnetic Orders in Two-Dimensional Magnet CrI3. Nano Letters. PMID 31771332 DOI: 10.1021/acs.nanolett.9b04282   
2019 Niu B, Su T, Francisco BA, Ghosh S, Kargar F, Huang X, Lohmann M, Li J, Xu Y, Taniguchi T, Watanabe K, Wu D, Balandin AA, Shi J, Cui Y. Coexistence of Magnetic Orders in Two-Dimensional Magnet CrI3. Nano Letters. PMID 31771332 DOI: 10.1021/acs.nanolett.9b04282   
2019 Yin JX, Zhang SS, Dai G, Zhao Y, Kreisel A, Macam G, Wu X, Miao H, Huang ZQ, Martiny JHJ, Andersen BM, Shumiya N, Multer D, Litskevich M, Cheng Z, et al. Quantum Phase Transition of Correlated Iron-Based Superconductivity in LiFe_{1-x}Co_{x}As. Physical Review Letters. 123: 217004. PMID 31809171 DOI: 10.1103/PhysRevLett.123.217004   
2019 Xu Y, Chen YR, Wang J, Liu JF, Ma Z. Quantized Field-Effect Tunneling between Topological Edge or Interface States. Physical Review Letters. 123: 206801. PMID 31809113 DOI: 10.1103/PhysRevLett.123.206801   
2019 Park GH, Watanabe K, Taniguchi T, Lee GH, Lee HJ. Engineering Crossed Andreev Reflection in Double Bilayer Graphene. Nano Letters. PMID 31738553 DOI: 10.1021/acs.nanolett.9b03981   
2019 Li Y, Wang Q, DeBeer-Schmitt L, Guguchia Z, Desautels RD, Yin JX, Du Q, Ren W, Zhao X, Zhang Z, Zaliznyak IA, Petrovic C, Yin W, Hasan MZ, Lei H, et al. Magnetic-Field Control of Topological Electronic Response near Room Temperature in Correlated Kagome Magnets. Physical Review Letters. 123: 196604. PMID 31765205 DOI: 10.1103/PhysRevLett.123.196604   
2019 Thomas F, Baumgartner A, Gubser L, Jünger C, Fülöp G, Nilsson M, Rossi F, Zannier V, Sorba L, Schoenenberger C. Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots. Nanotechnology. PMID 31778992 DOI: 10.1088/1361-6528/ab5ce6