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David W. Gotthold, Ph.D. - Publications

Affiliations: 
2000 University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Materials Science Engineering, Electronics and Electrical Engineering
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2008 Gherasoiu I, O’Steen M, Bird T, Gotthold D, Chandolu A, Song DY, Xu SX, Holtz M, Nikishin SA, Schaff WJ. Characterization of high quality InN grown on production-style plasma assisted molecular beam epitaxy system Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 26: 399-405. DOI: 10.1116/1.2899412  0.409
2004 Mattord TJ, Oye MM, Gotthold D, Hansing C, Holmes AL, Streetman BG. Construction of a variable aperture cell for source flux control in a molecular-beam epitaxy environment Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 22: 735-738. DOI: 10.1116/1.1710495  0.599
2003 Yang Q, Armitage R, Weber ER, Birkhahn R, Gotthold D, Guo S, Albert B. Recombination Related to Two-Dimensional Electron Gas of Al x Ga 1-x N/GaN Single Heterostructures Studied with Picosecond Time-Resolved Photoluminescence Mrs Proceedings. 798. DOI: 10.1557/Proc-798-Y10.47  0.323
2003 Mehandru R, Luo B, Kim J, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ, Gotthold D, Birkhahn R, Peres B, Fitch R, Gillespie J, Jenkins T, Sewell J, et al. AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation Applied Physics Letters. 82: 2530-2532. DOI: 10.1063/1.1567051  0.375
2002 Hull BA, Mohney SE, Chowdhury U, Dupuis RD, Gotthold D, Birkhahn R, Pophristic M. Contacts to High Aluminum Fraction p-type Aluminum Gallium Nitride Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L12.2  0.308
2001 Gotthold D, Gibb S, Peres B, Ferguson I, Palmer C, Armour E. Production Scale Growth of AlGaN/GaN Field Effect Transistors Mrs Proceedings. 693. DOI: 10.1557/Proc-693-I11.2.1  0.342
2001 Gotthold D, Govindaraju S, Reifsnider J, Kinsey G, Campbell J, Holmes A. Molecular-beam epitaxy growth of Ga(In)NAs/GaAs heterostructures for photodiodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 1400-1403. DOI: 10.1116/1.1379792  0.43
2000 Gotthold DW, Govindaraju S, Holmes AL, Streetman BG. Growth of GaInNAs by Plasma Assisted Molecular Beam Epitaxy Mrs Proceedings. 618: 315. DOI: 10.1557/Proc-618-315  0.606
2000 Gotthold DW, Govindaraju S, Mattord T, Holmes AL, Streetman BG. Growth of GaNAs by molecular beam expitaxy using a N2/Ar rf plasma Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 461-464. DOI: 10.1116/1.582209  0.6
1999 Chao KJ, Liu N, Shih C, Gotthold DW, Streetman BG. Factors influencing the interfacial roughness of InGaAs/GaAs heterostructures: A scanning tunneling microscopy study Applied Physics Letters. 75: 1703-1705. DOI: 10.1063/1.124795  0.347
1998 Reifsnider JM, Gotthold DW, Holmes AL, Streetman BG. Improved quality GaN films grown by molecular beam epitaxy on sapphire Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 16: 1278-1281. DOI: 10.1116/1.589999  0.507
1997 Chao K, Shih C, Gotthold DW, Streetman BG. Determination Of 2D Pair Correlations And Pair Interaction Energies Of In Atoms In Molecular Beam Epitaxially Grown Ingaas Alloys Physical Review Letters. 79: 4822-4825. DOI: 10.1103/Physrevlett.79.4822  0.357
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