Year |
Citation |
Score |
2019 |
Yao Y, Shushkov P, Miller TF, Giapis KP. Direct dioxygen evolution in collisions of carbon dioxide with surfaces. Nature Communications. 10: 2294. PMID 31127109 DOI: 10.1038/S41467-019-10342-6 |
0.336 |
|
2017 |
Yao Y, Giapis KP. Intramolecular water-splitting reaction in single collisions of water ions with surfaces. Chemical Science. 8: 2852-2858. PMID 28553523 DOI: 10.1039/C6Sc05065D |
0.325 |
|
2016 |
Yao Y, Giapis KP. Dynamic nitroxyl formation in the ammonia oxidation on platinum via Eley-Rideal reactions. Physical Chemistry Chemical Physics : Pccp. PMID 27759137 DOI: 10.1039/C6Cp06533C |
0.317 |
|
2016 |
Yao Y, Giapis KP. Direct Hydrogenation of Dinitrogen and Dioxygen via Eley-Rideal Reactions. Angewandte Chemie (International Ed. in English). PMID 27534611 DOI: 10.1002/Anie.201604899 |
0.302 |
|
2016 |
Giapis K, Yao Y. Tuning Charge Transfer in Ion-Surface Collisions at Hyperthermal Energies. Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry. PMID 26879471 DOI: 10.1002/Cphc.201600045 |
0.394 |
|
2013 |
Brunelli NA, Neidholdt EL, Giapis KP, Flagan RC, Beauchamp JL. Continuous flow ion mobility separation with mass spectrometric detection using a nano-radial differential mobility analyzer at low flow rates. Analytical Chemistry. 85: 4335-41. PMID 23544674 DOI: 10.1021/Ac3032417 |
0.333 |
|
2012 |
Zhang X, Hu M, Giapis KP, Poulikakos D. Schemes for and Mechanisms of Reduction in Thermal Conductivity in Nanostructured Thermoelectrics Journal of Heat Transfer. 134. DOI: 10.1115/1.4006750 |
0.331 |
|
2011 |
Hu M, Giapis KP, Poulikakos D. Interfacial mixing during annealing of zinc oxide nanoparticle junctions Applied Physics Letters. 98: 211904. DOI: 10.1063/1.3593487 |
0.302 |
|
2009 |
Gordon MJ, Qin X, Kutana A, Giapis KP. Gas-surface chemical reactions at high collision energies? Journal of the American Chemical Society. 131: 1927-30. PMID 19191705 DOI: 10.1021/Ja807672N |
0.532 |
|
2009 |
Brunelli NA, Flagan RC, Giapis KP. Radial Differential Mobility Analyzer for One Nanometer Particle Classification Aerosol Science and Technology. 43: 53-59. DOI: 10.1080/02786820802464302 |
0.324 |
|
2009 |
Narui Y, Ceres DM, Chen J, Giapis KP, Collier CP. High aspect ratio silicon dioxide-coated single-walled carbon nanotube scanning probe nanoelectrodes Journal of Physical Chemistry C. 113: 6815-6820. DOI: 10.1021/Jp901080E |
0.34 |
|
2006 |
Mace J, Gordon MJ, Giapis KP. Evidence of simultaneous double-electron promotion in F+ collisions with surfaces. Physical Review Letters. 97: 257603. PMID 17280394 DOI: 10.1103/Physrevlett.97.257603 |
0.499 |
|
2006 |
Kutana A, Gordon M, Giapis K. Neutralization of hyperthermal Ne+ on metal surfaces Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 248: 16-20. DOI: 10.1016/J.Nimb.2006.03.187 |
0.58 |
|
2005 |
Sankaran RM, Holunga D, Flagan RC, Giapis KP. Synthesis of blue luminescent si nanoparticles using atmospheric-pressure microdischarges. Nano Letters. 5: 537-41. PMID 15755110 DOI: 10.1021/Nl0480060 |
0.693 |
|
2005 |
Gordon MJ, Mace J, Giapis KP. Charge-exchange mechanisms at the threshold for inelasticity inNe+collisions with surfaces Physical Review A. 72. DOI: 10.1103/Physreva.72.012904 |
0.372 |
|
2005 |
Gordon MJ, Giapis KP. Low-energy ion beamline scattering apparatus for surface science investigations Review of Scientific Instruments. 76: 083302. DOI: 10.1063/1.1994987 |
0.581 |
|
2003 |
Sankaran RM, Giapis KP. High-pressure micro-discharges in etching and deposition applications Journal of Physics D: Applied Physics. 36: 2914-2921. DOI: 10.1088/0022-3727/36/23/008 |
0.352 |
|
2002 |
Sankaran RM, Giapis KP. Hollow cathode sustained plasma microjets: Characterization and application to diamond deposition Journal of Applied Physics. 92: 2406-2411. DOI: 10.1063/1.1497719 |
0.34 |
|
2002 |
Giapis KP, Hwang GS, Joubert O. The role of mask charging in profile evolution and gate oxide degradation Microelectronic Engineering. 61: 835-847. DOI: 10.1016/S0167-9317(02)00459-8 |
0.585 |
|
2001 |
Sankaran RM, Giapis KP. Maskless etching of silicon using patterned microdischarges Applied Physics Letters. 79: 593-595. DOI: 10.1063/1.1388867 |
0.354 |
|
2000 |
Giapis K, Hwang G. Plasma interactions with high aspect ratio patterned surfaces: ion transport, scattering, and the role of charging Thin Solid Films. 374: 175-180. DOI: 10.1016/S0040-6090(00)01149-4 |
0.576 |
|
1999 |
Hwang GS, Giapis KP. Role of film conformality in charging damage during plasma-assisted interlevel dielectric deposition Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 999. DOI: 10.1116/1.590683 |
0.565 |
|
1999 |
Hwang G, Giapis K. Pattern-dependent charging in plasmas Ieee Transactions On Plasma Science. 27: 102-103. DOI: 10.1109/27.763065 |
0.574 |
|
1999 |
Hwang GS, Giapis KP. Charging damage during residual metal overetching Applied Physics Letters. 74: 932-934. DOI: 10.1063/1.123413 |
0.587 |
|
1998 |
Hwang GS, Giapis KP. Mechanism of Charging Reduction in Pulsed Plasma Etching Japanese Journal of Applied Physics. 37: 2291-2301. DOI: 10.1143/Jjap.37.2291 |
0.593 |
|
1998 |
Giapis KP, Hwang GS. Pattern-Dependent Charging and the Role of Electron Tunneling Japanese Journal of Applied Physics. 37: 2281-2290. DOI: 10.1143/Jjap.37.2281 |
0.59 |
|
1998 |
Hwang GS, Giapis KP. The influence of surface currents on pattern-dependent charging and notching Journal of Applied Physics. 84: 683-689. DOI: 10.1063/1.368123 |
0.582 |
|
1998 |
Hwang GS, Giapis KP. Modeling of charging damage during interlevel oxide deposition in high-density plasmas Journal of Applied Physics. 84: 154-160. DOI: 10.1063/1.368012 |
0.564 |
|
1997 |
Hwang GS, Giapis KP. The Role of the Substrate on Pattern‐Dependent Charging Journal of the Electrochemical Society. 144: L320-L322. DOI: 10.1149/1.1838146 |
0.556 |
|
1997 |
Hwang GS, Giapis KP. On the Origin of Charging Damage during Etching of Antenna Structures Journal of the Electrochemical Society. 144: L285-L287. DOI: 10.1149/1.1838011 |
0.554 |
|
1997 |
Hwang GS, Giapis KP. Pattern-Dependent Charging in Plasmas: Electron Temperature Effects Physical Review Letters. 79: 845-848. DOI: 10.1103/Physrevlett.79.845 |
0.585 |
|
1997 |
Hwang GS, Giapis KP. The influence of mask thickness on charging damage during overetching Journal of Applied Physics. 82: 572-577. DOI: 10.1063/1.365617 |
0.587 |
|
1997 |
Hwang GS, Giapis KP. Aspect-ratio-dependent charging in high-density plasmas Journal of Applied Physics. 82: 566-571. DOI: 10.1063/1.365616 |
0.59 |
|
1997 |
Hwang GS, Giapis KP. The influence of electron temperature on pattern-dependent charging during etching in high-density plasmas Journal of Applied Physics. 81: 3433-3439. DOI: 10.1063/1.365039 |
0.6 |
|
1997 |
Hwang GS, Giapis KP. How tunneling currents reduce plasma-induced charging Applied Physics Letters. 71: 2928-2930. DOI: 10.1063/1.120218 |
0.588 |
|
1997 |
Hwang GS, Giapis KP. Simulation of current transients through ultrathin gate oxides during plasma etching Applied Physics Letters. 71: 1945-1947. DOI: 10.1063/1.119989 |
0.559 |
|
1997 |
Hwang GS, Giapis KP. Ion mass effect in plasma-induced charging Applied Physics Letters. 71: 1942-1944. DOI: 10.1063/1.119988 |
0.544 |
|
1997 |
Hwang GS, Giapis KP. Aspect ratio independent etching of dielectrics Applied Physics Letters. 71: 458-460. DOI: 10.1063/1.119578 |
0.585 |
|
1997 |
Hwang GS, Giapis KP. Prediction of multiple-feature effects in plasma etching Applied Physics Letters. 70: 2377-2379. DOI: 10.1063/1.118878 |
0.51 |
|
1997 |
Minton TK, Giapis KP, Moore T. Inelastic scattering dynamics of hyperthermal fluorine atoms on a fluorinated silicon surface Journal of Physical Chemistry A. 101: 6549-6555. DOI: 10.1021/Jp970767M |
0.324 |
|
1996 |
Hwang GS, Anderson CM, Gordon J, Moore TA, Minton TK, Giapis KP. Gas-Surface Dynamics and Profile Evolution during Etching of Silicon. Physical Review Letters. 77: 3049-3052. PMID 10062118 DOI: 10.1103/Physrevlett.77.3049 |
0.521 |
|
1995 |
Giapis KP, Moore TA, Minton TK. Hyperthermal neutral beam etching Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 959-965. DOI: 10.1116/1.579658 |
0.349 |
|
1994 |
Skromme B, Liu W, Jensen K, Giapis K. Effects of C incorporation on the luminescence properties of ZnSe grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 138: 338-345. DOI: 10.1016/0022-0248(94)90830-3 |
0.369 |
|
1993 |
Giapis KP, Sadeghi N, Margot J, Gottscho RA, Lee TCJ. Limits to ion energy control in high density glow discharges: Measurement of absolute metastable ion concentrations Journal of Applied Physics. 73: 7188-7194. DOI: 10.1063/1.352391 |
0.406 |
|
1991 |
Giapis KP, Gottscho RA, Clark LA, Kruskal JB, Lambert D, Kornblit A, Sinatore D. Use of light scattering in characterizing reactively ion etched profiles Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 9: 664-668. DOI: 10.1116/1.577386 |
0.32 |
|
1991 |
Patnaik S, Jensen KF, Giapis KP. MOVPE of ZnSe using organometallic allyl selenium precursors Journal of Crystal Growth. 107: 390-395. DOI: 10.1016/0022-0248(91)90492-N |
0.33 |
|
1990 |
Gottscho RA, Preppernau BL, Pearton SJ, Emerson AB, Giapis KP. Real‐time monitoring of low‐temperature hydrogen plasma passivation of GaAs Journal of Applied Physics. 68: 440-445. DOI: 10.1063/1.346813 |
0.327 |
|
1990 |
Giapis KP, Scheller GR, Gottscho RA, Hobson WS, Lee YH. Microscopic and macroscopic uniformity control in plasma etching Applied Physics Letters. 57: 983-985. DOI: 10.1063/1.103532 |
0.359 |
|
1990 |
Giapis KP, Jensen KF. Effect of operating conditions and precursors on optoelectronic properties of OMVPE grown ZnSe Journal of Crystal Growth. 101: 111-117. DOI: 10.1016/0022-0248(90)90947-J |
0.332 |
|
1990 |
Giapis KP, Lu D, Jensen KF, Potts JE. Temperature variations in electrical and photoluminescence properties of ZnSe grown by MOCVD Journal of Crystal Growth. 104: 291-296. DOI: 10.1016/0022-0248(90)90129-9 |
0.369 |
|
1990 |
Giapis KP, Lu D, Fotiadis DI, Jensen KF. A new reactor system for MOCVD of ZaSe: Modelling and experimental results for growth from dimethylzinc and diethylselenide Journal of Crystal Growth. 104: 629-640. DOI: 10.1016/0022-0248(90)90006-7 |
0.337 |
|
1990 |
Giapis KP, Jensen KF, Potts JE, Pachuta SJ. Investigation of carbon incorporation in znse: Effects on morphology, electrical, and photoluminescence properties Journal of Electronic Materials. 19: 453-462. DOI: 10.1007/BF02658006 |
0.376 |
|
1989 |
Giapis KP, Jensen KF, Potts JE, Pachuta SJ. Carbon incorporation in ZnSe grown by metalorganic chemical vapor deposition Applied Physics Letters. 55: 463-465. DOI: 10.1063/1.101853 |
0.452 |
|
1989 |
Giapis KP, Lu D, Jensen KF. High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics Applied Physics Letters. 54: 353-355. DOI: 10.1063/1.100967 |
0.464 |
|
1988 |
Giapis KP, Da-Cheng L, Jensen KF. Effects of the Selenium Precursor on the Growth of ZnSe by Metalorganic Chemical Vapor Deposition Mrs Proceedings. 131. DOI: 10.1557/PROC-131-63 |
0.402 |
|
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