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Tyler J. Eustis, Ph.D. - Publications

Affiliations: 
2004 Cornell University, Ithaca, NY, United States 
Area:
Materials Science Engineering
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8 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2002 Jiang N, Eustis TJ, Cai J, Ponce F, Spence J, Silcox J. Polarity determination by atomic location by channeling-enhanced microanalysis Applied Physics Letters. 80: 389-391. DOI: 10.1063/1.1433919  0.483
2000 Eustis TJ, Silcox J, Murphy MJ, Schaff WJ. Evidence From EELS of Oxygen in the Nucleation Layer of a MBE Grown III-N HEMT Mrs Internet Journal of Nitride Semiconductor Research. 5: 188-194. DOI: 10.1557/S1092578300004269  0.549
2000 Schaff WJ, Wu H, Praharaj CJ, Murphy M, Eustis T, Foutz B, Ambacher O, Eastman LF. GaN/SiC heterojunction bipolar transistors Solid-State Electronics. 44: 259-264. DOI: 10.1016/S0038-1101(99)00232-4  0.417
1999 Murphy MJ, Foutz BE, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Dimitrov R, Stutzmann M, Rieger W. Normal and Inverted Algan/Gan Based Piezoelectric Field Effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy Mrs Internet Journal of Nitride Semiconductor Research. 4: 840-845. DOI: 10.1557/S1092578300003501  0.408
1999 Eustis TJ, Silcox J, Murphy MJ, Schaff WJ. Evidence from EELS of Oxygen in the Nucleation Layer of a MBE grown III-N HEMT Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W3.31  0.549
1999 Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Smart J, Shealy JR, Eastman LF, Eustis TJ. Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN/GaN based heterostructures Journal of Vacuum Science & Technology B. 17: 1252-1254. DOI: 10.1116/1.590733  0.502
1999 Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Silcox J, Dimitrov R, Stutzmann M. High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 75: 3653-3655. DOI: 10.1063/1.125418  0.552
1998 Murphy MJ, Foutz BE, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Dimitrov R, Stutzmann M, Rieger W. Normal and Inverted Algan/Gan Based Piezoelectric Field effect Transistors Grown by Plasma Induced Molecular Beam Epitaxy Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G8.4  0.408
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